US4274124A - Thick film capacitor having very low internal inductance - Google Patents

Thick film capacitor having very low internal inductance Download PDF

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Publication number
US4274124A
US4274124A US06/106,640 US10664079A US4274124A US 4274124 A US4274124 A US 4274124A US 10664079 A US10664079 A US 10664079A US 4274124 A US4274124 A US 4274124A
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United States
Prior art keywords
capacitor
plates
sheets
spaced
groups
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US06/106,640
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English (en)
Inventor
Irving Feinberg
Leon L. Wu
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International Business Machines Corp
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International Business Machines Corp
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Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US06/106,640 priority Critical patent/US4274124A/en
Priority to JP14252380A priority patent/JPS5694720A/ja
Priority to CA000364207A priority patent/CA1148227A/en
Priority to DE8080106924T priority patent/DE3071907D1/de
Priority to EP80106924A priority patent/EP0031427B1/de
Application granted granted Critical
Publication of US4274124A publication Critical patent/US4274124A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors

Definitions

  • the invention generally relates to decoupling capacitors and, more particularly, to decoupling capacitors characterized by low internal inductance.
  • An effective decoupling capacitor is essential to the noise isolation of very fast switching, highly integrated logic circuit modules so that switching noise is not coupled between the modules due to the common primary power source.
  • An effective decoupling capacitor for such applications is one having extremely whereby very fast charging and discharging are achieved.
  • a capacitor structure characterized by very low internal inductance is achieved by stacking closely spaced ceramic sheets having metallized surfaces and connecting the same ends of the sheets to respective electrodes in such a way that current flows in opposite directions through adjacent facing plates.
  • the sheets are connected together in groups. Alternate groups are connected to one of the electrodes. The intervening alternate groups are connected to the other of the electrodes.
  • FIG. 1 is a perspective external view of a capacitor designed in accordance with the present invention
  • FIG. 1A is an enlarged perspective view of the dashed portion of the capacitor of FIG. 1;
  • FIG. 2 is an exploded view of FIG. 1A;
  • FIGS. 3A and 3B depict the fabrication of one of the sheets used in FIGS. 1, 1A and 2;
  • the capacitor 1 of FIG. 1 comprises stacked vertically disposed sheets of conductively clad ceramic material.
  • the sheets are connected together in groups by localized regions 2 of conductive material imbedded in the top edges of the sheets.
  • FIG. 1A is an enlarged view of the dashed portion 3 of capacitor 1.
  • sheets 4, 5 and 6 comprise respective thin substrates 7, 8 and 9 of ceramic material such as a barium titanate base material.
  • Each of the substrates is covered with a respective layer 10, 11 and 12 of conductive material such as silver palladium paste.
  • the top edges of substrates 5 and 6 are punched out.
  • the punched out regions are filled with conductive paste 13 so that conductive layers 10, 11 and 12 are electrically connected to each other in a group after the group is assembled.
  • An exploded view of the group, prior to assembly, is shown in FIG. 2. Assembly is accomplished by pressing the substrates together and sintering.
  • the thickness of the ceramic substrates is in the range of about 2 to 21/2 mils and the thickness of the conductive layer is about 1/2 mil.
  • Sheets such as sheets 5 and 6 are cut out of larger ceramic sheet material 14 as shown in FIG. 3A.
  • the larger sheet is punched through in rectangular regions 15 having dimensions of 6 by 20 mils in a typical instance.
  • the punched sheet 14 is covered by conductive paste which is applied by squeegee to a desired thickness while simultaneously filling the punched out regions 15.
  • Individual sheets such as sheet 16 of FIG. 3B are obtained by cutting sheet 14 of FIG. 3A along the dashed lines.
  • the overall capacitor 1 in effect, is a plurality of constituent capacitors connected in parallel in a manner to be described.
  • One of the constituent capacitors is formed by conductive layer 12, conductive layer 17 and intervening dielectric (ceramic) layer 18.
  • Another adjacent constituent capacitor is formed by conductive layer 19, conductive layer 10 and intervening dielectric layer 7.
  • each constituent capacitor is reduced as the thickness of the dielectric layers, such as layers 7 and 18, is reduced and is reduced as the length 27 of each of the sheets is increased.
  • the height 28 of each sheet it is desirable to minimize the height 28 of each sheet consistent with fabrication and total capacitance requirements.
  • the length and height of each of the sheets are 100 mils and 50 mils, respectively.
  • solder reflow balls are placed at each of the metallized regions 13 to join the capacitor plate connecting structure 20 to the constituent capacitors.
  • the connecting structure 20 comprises two levels of metal 21 and 22 separated by insulating layer 23. Layers 21 and 23 are apertured over alternate groups of sheets such as the group consisting of sheets 5 and 6 in order to permit a conductive connection via the C4 balls between top conductive layer 22 and each of the metallized regions 13 of sheets 5 and 6.
  • the intervening alternate groups of sheets such as the group consisting of sheets 24 and 25 are similarly connected to bottom conductive layer 21 via the C4 balls.
  • the C4 balls be evaporated onto the regions 13 with the use of an additional ceramic sheet 26 which is apertured to form a via matrix of discrete connectors forming spaced parallel rows and spaced parallel columns at right angle to said rows in registration with the matrix of regions 13 as shown in FIG. 1.
  • the additional sheet is pressed and sintered across the top surface of the structure 1 of FIG. 1 prior to C4 evaporation and serves as a solder dam, during reflow when the connecting structure 20 of FIG. 4 is being added, to prevent uncontrolled solder flow between the regions 13 along the edges of the conductive layers such as layers 10, 11 and 12.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
US06/106,640 1979-12-26 1979-12-26 Thick film capacitor having very low internal inductance Expired - Lifetime US4274124A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US06/106,640 US4274124A (en) 1979-12-26 1979-12-26 Thick film capacitor having very low internal inductance
JP14252380A JPS5694720A (en) 1979-12-26 1980-10-14 Capacitor with low internal inductance
CA000364207A CA1148227A (en) 1979-12-26 1980-11-07 Thick film capacitor having very low internal inductance
DE8080106924T DE3071907D1 (en) 1979-12-26 1980-11-10 Thick-film capacitor
EP80106924A EP0031427B1 (de) 1979-12-26 1980-11-10 Dickschicht-Kondensator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/106,640 US4274124A (en) 1979-12-26 1979-12-26 Thick film capacitor having very low internal inductance

Publications (1)

Publication Number Publication Date
US4274124A true US4274124A (en) 1981-06-16

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ID=22312491

Family Applications (1)

Application Number Title Priority Date Filing Date
US06/106,640 Expired - Lifetime US4274124A (en) 1979-12-26 1979-12-26 Thick film capacitor having very low internal inductance

Country Status (5)

Country Link
US (1) US4274124A (enrdf_load_stackoverflow)
EP (1) EP0031427B1 (enrdf_load_stackoverflow)
JP (1) JPS5694720A (enrdf_load_stackoverflow)
CA (1) CA1148227A (enrdf_load_stackoverflow)
DE (1) DE3071907D1 (enrdf_load_stackoverflow)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4349862A (en) * 1980-08-11 1982-09-14 International Business Machines Corporation Capacitive chip carrier and multilayer ceramic capacitors
US4744008A (en) * 1986-11-18 1988-05-10 International Business Machines Corporation Flexible film chip carrier with decoupling capacitors
US4791006A (en) * 1987-06-04 1988-12-13 Avx Corporation High accuracy variable thickness laydown method for electronic components
US4791391A (en) * 1983-03-30 1988-12-13 E. I. Du Pont De Nemours And Company Planar filter connector having thick film capacitors
US4945399A (en) * 1986-09-30 1990-07-31 International Business Machines Corporation Electronic package with integrated distributed decoupling capacitors
US5339212A (en) * 1992-12-03 1994-08-16 International Business Machines Corporation Sidewall decoupling capacitor
US5548486A (en) * 1994-01-21 1996-08-20 International Business Machines Corporation Pinned module
US5731960A (en) * 1996-09-19 1998-03-24 Bay Networks, Inc. Low inductance decoupling capacitor arrangement
US5761049A (en) * 1994-09-19 1998-06-02 Hitachi, Ltd. Inductance cancelled condenser implemented apparatus
US5793602A (en) * 1994-02-02 1998-08-11 Denis N. Morecroft Low impedance capacitor
US5878483A (en) * 1995-06-01 1999-03-09 International Business Machines Corporation Hammer for forming bulges in an array of compliant pin blanks
US5880925A (en) * 1997-06-27 1999-03-09 Avx Corporation Surface mount multilayer capacitor
WO2000055875A1 (en) * 1999-03-16 2000-09-21 Maxwell Energy Products Low inductance four terminal capacitor lead frame
US6188565B1 (en) 1997-11-10 2001-02-13 Murata Manufacturing Co., Ltd. Multilayer capacitor
US6266228B1 (en) 1997-11-10 2001-07-24 Murata Manufacturing Co., Ltd Multilayer capacitor
US6266229B1 (en) 1997-11-10 2001-07-24 Murata Manufacturing Co., Ltd Multilayer capacitor
US6292350B1 (en) 1997-11-10 2001-09-18 Murata Manufacturing, Co., Ltd Multilayer capacitor
US6327134B1 (en) 1999-10-18 2001-12-04 Murata Manufacturing Co., Ltd. Multi-layer capacitor, wiring board, and high-frequency circuit
US6331930B1 (en) 1999-05-10 2001-12-18 Murata Manufacturing Co., Ltd. Multilayer capacitor, electronic device and high frequency circuit using the same
US6344961B1 (en) 1999-11-19 2002-02-05 Murata Manufacturing Co., Ltd Multi-layer capacitator, wiring substrate, decoupling circuit, and high-frequency circuit
US6407904B1 (en) 1999-05-10 2002-06-18 Murata Manufacturing Co., Ltd. Multi-layer capacitor
US6418009B1 (en) 2000-09-28 2002-07-09 Nortel Networks Limited Broadband multi-layer capacitor
US6549395B1 (en) 1997-11-14 2003-04-15 Murata Manufacturing Co., Ltd Multilayer capacitor
US20040037058A1 (en) * 2002-08-20 2004-02-26 Craig Ernsberger Ball grid array resistor capacitor network
US20040046230A1 (en) * 1999-06-11 2004-03-11 International Business Machines Corporation Intralevel decoupling capacitor, method of manufacture and testing circuit of the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3342329A1 (de) * 1983-11-23 1985-05-30 Siemens AG, 1000 Berlin und 8000 München Elektrischer kondensator aus einem verfestigten stapel von aneinander geschichteten metallisierten dielektrikumslagen und verfahren zu seiner herstellung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB614076A (en) * 1942-07-15 1948-12-09 Philips Nv Improvements in electric condensers
US3308359A (en) * 1965-03-12 1967-03-07 Bruce R Hayworth Low-inductance capacitor
US3346790A (en) * 1960-02-18 1967-10-10 Tobe Deutschmann Lab Low inductance high voltage capacitor
US3452257A (en) * 1968-03-28 1969-06-24 Vitramon Inc Electrical capacitor
US3838320A (en) * 1974-01-04 1974-09-24 American Tech Ceramics Multiple layer capacitors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1280454A (fr) * 1961-02-18 1961-12-29 Tobe Deutschmann Lab Capacité haute tension
GB1270470A (en) * 1969-06-09 1972-04-12 Tobe Deutschmann Lab Inc Low-inductance capacitor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB614076A (en) * 1942-07-15 1948-12-09 Philips Nv Improvements in electric condensers
US3346790A (en) * 1960-02-18 1967-10-10 Tobe Deutschmann Lab Low inductance high voltage capacitor
US3308359A (en) * 1965-03-12 1967-03-07 Bruce R Hayworth Low-inductance capacitor
US3452257A (en) * 1968-03-28 1969-06-24 Vitramon Inc Electrical capacitor
US3838320A (en) * 1974-01-04 1974-09-24 American Tech Ceramics Multiple layer capacitors

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4349862A (en) * 1980-08-11 1982-09-14 International Business Machines Corporation Capacitive chip carrier and multilayer ceramic capacitors
US4791391A (en) * 1983-03-30 1988-12-13 E. I. Du Pont De Nemours And Company Planar filter connector having thick film capacitors
US4945399A (en) * 1986-09-30 1990-07-31 International Business Machines Corporation Electronic package with integrated distributed decoupling capacitors
US4744008A (en) * 1986-11-18 1988-05-10 International Business Machines Corporation Flexible film chip carrier with decoupling capacitors
US4791006A (en) * 1987-06-04 1988-12-13 Avx Corporation High accuracy variable thickness laydown method for electronic components
US5339212A (en) * 1992-12-03 1994-08-16 International Business Machines Corporation Sidewall decoupling capacitor
US5548486A (en) * 1994-01-21 1996-08-20 International Business Machines Corporation Pinned module
US5715595A (en) * 1994-01-21 1998-02-10 International Business Machines Corporation Method of forming a pinned module
US5793602A (en) * 1994-02-02 1998-08-11 Denis N. Morecroft Low impedance capacitor
US5761049A (en) * 1994-09-19 1998-06-02 Hitachi, Ltd. Inductance cancelled condenser implemented apparatus
US5878483A (en) * 1995-06-01 1999-03-09 International Business Machines Corporation Hammer for forming bulges in an array of compliant pin blanks
US5731960A (en) * 1996-09-19 1998-03-24 Bay Networks, Inc. Low inductance decoupling capacitor arrangement
US5880925A (en) * 1997-06-27 1999-03-09 Avx Corporation Surface mount multilayer capacitor
US6243253B1 (en) 1997-06-27 2001-06-05 Avx Corporation Surface mount multilayer capacitor
US6266228B1 (en) 1997-11-10 2001-07-24 Murata Manufacturing Co., Ltd Multilayer capacitor
US6215647B1 (en) 1997-11-10 2001-04-10 Murata Manufacturing Co., Ltd. Multilayer capacitor
US6226169B1 (en) 1997-11-10 2001-05-01 Murata Manufacturing Co., Ltd. Multilayer capacitor
US6188565B1 (en) 1997-11-10 2001-02-13 Murata Manufacturing Co., Ltd. Multilayer capacitor
US6430025B2 (en) 1997-11-10 2002-08-06 Murata Manufacturing Co., Ltd. Multilayer capacitor
US6266229B1 (en) 1997-11-10 2001-07-24 Murata Manufacturing Co., Ltd Multilayer capacitor
US6292350B1 (en) 1997-11-10 2001-09-18 Murata Manufacturing, Co., Ltd Multilayer capacitor
US6549395B1 (en) 1997-11-14 2003-04-15 Murata Manufacturing Co., Ltd Multilayer capacitor
WO2000055875A1 (en) * 1999-03-16 2000-09-21 Maxwell Energy Products Low inductance four terminal capacitor lead frame
US6331930B1 (en) 1999-05-10 2001-12-18 Murata Manufacturing Co., Ltd. Multilayer capacitor, electronic device and high frequency circuit using the same
US6407904B1 (en) 1999-05-10 2002-06-18 Murata Manufacturing Co., Ltd. Multi-layer capacitor
US7195971B2 (en) 1999-06-11 2007-03-27 International Business Machines Corporation Method of manufacturing an intralevel decoupling capacitor
US7323382B2 (en) 1999-06-11 2008-01-29 International Business Machines Corporation Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
US20040046230A1 (en) * 1999-06-11 2004-03-11 International Business Machines Corporation Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
US20070204447A1 (en) * 1999-06-11 2007-09-06 International Business Machines Corporation Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
US6882015B2 (en) * 1999-06-11 2005-04-19 International Business Machines Corporation Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
US20050139959A1 (en) * 1999-06-11 2005-06-30 International Business Machines Corporation Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
US6327134B1 (en) 1999-10-18 2001-12-04 Murata Manufacturing Co., Ltd. Multi-layer capacitor, wiring board, and high-frequency circuit
US6344961B1 (en) 1999-11-19 2002-02-05 Murata Manufacturing Co., Ltd Multi-layer capacitator, wiring substrate, decoupling circuit, and high-frequency circuit
US6418009B1 (en) 2000-09-28 2002-07-09 Nortel Networks Limited Broadband multi-layer capacitor
US6856516B2 (en) 2002-08-20 2005-02-15 Cts Corporation Ball grid array resistor capacitor network
US20040037058A1 (en) * 2002-08-20 2004-02-26 Craig Ernsberger Ball grid array resistor capacitor network

Also Published As

Publication number Publication date
EP0031427A3 (en) 1984-05-23
DE3071907D1 (en) 1987-03-26
CA1148227A (en) 1983-06-14
EP0031427A2 (de) 1981-07-08
JPS5694720A (en) 1981-07-31
JPS622449B2 (enrdf_load_stackoverflow) 1987-01-20
EP0031427B1 (de) 1987-02-18

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