US3886586A - Thyristor housing assembly - Google Patents
Thyristor housing assembly Download PDFInfo
- Publication number
- US3886586A US3886586A US39740373A US3886586A US 3886586 A US3886586 A US 3886586A US 39740373 A US39740373 A US 39740373A US 3886586 A US3886586 A US 3886586A
- Authority
- US
- United States
- Prior art keywords
- control line
- thyristor
- electrode
- ring
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 3
- 230000006835 compression Effects 0.000 claims description 2
- 238000007906 compression Methods 0.000 claims description 2
- 230000000284 resting effect Effects 0.000 claims description 2
- 229910000906 Bronze Inorganic materials 0.000 abstract description 4
- 229910052790 beryllium Inorganic materials 0.000 abstract description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010974 bronze Substances 0.000 abstract description 4
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000011797 cavity material Substances 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- LSIXBBPOJBJQHN-UHFFFAOYSA-N 2,3-Dimethylbicyclo[2.2.1]hept-2-ene Chemical compound C1CC2C(C)=C(C)C1C2 LSIXBBPOJBJQHN-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Definitions
- a disk-shaped gas tight thyristor housing assembly which consists of a housing formed of an insulating ring shaped wall and two metal cover plates with a thyristor mounted therein. The thyristor is pressed between a metal plate which engages the cathode ring electrode and one of the cover plates which engages the anode electrode.
- the control lead to the ignition electrode which is centrally located in the upper surface of the thyristor extends through the ring shaped wall, then through insulating tube lying in a groove which engages the cathode ring electrode, then into an insulating tubular compartment which is located in a centrally located well in the under surface of the plate, which engages the cathode ring electrode.
- the inner end of the ignition control lead terminates in a downwardly extending coil which engages the ignition electrode.
- the upper portion of the coil backs an insulating cap which closes off the inner end of the well.
- At least the coil portion of the control lead is formed of springy material, such as beryllium bronze.
- the field of the present invention relates to thyristor housing assemblies and particularly to the nature of the housing and to the manner which electrical contact is made with the various electrodes of the thyristor. It has been suggested in the past that a thyristor might be mounted in a disc-shaped housing formed of an insulating ring-shaped wall portion closed at both ends by metal discs. The thyristor mounted within the housing had its anode electrode and its cathode electrode engaged respectively by the metal discs thereby to provide external lead connections to the anode and cathode of the thyristor.
- connection to the ignition electrode was made by a wire extending through the ring shaped housing wall and, by leverage from the outside, was caused to press against the ignition electrode.
- This prior structure was found to have considerable disadvantages.
- the assembly of the control line to the ignition electrode was relatively complicated.
- the pressure of the control line on the ignition electrode was small on account of the length of the control line extending into the housing before it reached the control electrode.
- the direction of the slot in the upper metal plate had to agree with the direction of extension of the control line.
- the greatest disadvantage consisted in the fact that the pressure of the control line on the ignition electrode could not be set accurately.
- a disc-shaped gas tight thyristor housing assembly which consists of a housing formed of an insulating ring shaped wall and two metal cover plates with a thyristor mounted therein.
- the thyristor is pressed between a metal plate which engages the cathode ring electrode and one of the cover plates which engages the anode electrode.
- the control lead to the ignition electrode which is centrally located in the upper surface of the thyristor extends through the ring shaped wall, then through insulating tube lying in a groove which engages the cathode ring electrode, then into an insulating tubular compartment which is located in a centrally located well in the under surface of the plate which engages the cathode ring electrode.
- the inner end of the ignition control lead terminates in a downwardly extending coil which engages the ignition electrode.
- the upper portion of the coil backs an insulating cap which closes off the inner end of the well.
- At least the coil portion of the control lead is formed of springy material, such as beryllium bronze.
- Means can be provided which clamps the control line to the upper metal plate.
- This means can consist of an elastic insulating ring which is located in the recess, whose outer diameter is somewhat greater than the recess and whose inner diameter is somewhat greater than the outer diameter of the spiral spring.
- the end of the control line which passes into the opening is expediently wave shaped and is elastically clamped in the opening.
- the slot is expediently arranged on the side of the metal plate which faces away from the semiconductor element.
- FIG. I is a diagrammatic vertical view partly in section illustrating an embodiment of this invention.
- FIG. 2 is a diagrammatic plan view looking down on the upper face of the top metal plate with the housing removed.
- FIGS. 1 and 2 of the drawings The preferred embodiment of the present invention shown in FIGS. 1 and 2 of the drawings, comprises a disc-shaped gas tight housing consisting of a ringshaped wall 1 formed of an insulating material such as aluminum oxide which is closed at its two ends by metal cover plates 2 and 3.
- the metal cover plates 2 and 3 are soldered or welded to rings 4 and 5, which rings are connected to the insulating ring-shaped wall 1 by hard soldering.
- the rings 4 and 5 preferably are formed of metal whose thermal expansion coefficient is adapted to that of the ring-shaped wall 1.
- the rings 4 and 5 may be of an iron-nickel-cobalt alloy which has become known under the trade name Kovar.
- a semiconductor thyristor 6 is mounted on the lower cover plate 3. This may be done by permanently soldering it into position or securing it by a press fit. It will be understood that when the semiconductor element 6 is a conventional type thyristor, it will include an anode electrode (not shown) on its under sur face, a ring-shaped cathode electrode (not shown) on its upper surface, and an ignition electrode (not shown) in the center of its upper surface in substantially the same plane as the ring-shaped cathode electrode.
- a metal plate 7 On the upper side of the thyristor 6 lies a metal plate 7 which has a recess or well 8 extending upwardly from its under surface. The recess 8 is centrally located. The upper surface of the metal plate 7 is seated against the cover plate 2 and makes electrical contact therewith.
- a slot 13 Extending radially inwardly from the outer edge of the disc-shaped metal plate 7 is a slot 13. As may be seen from an inspection of FIGS. 1 and 2, this slot 13 extends an appreciable distance past the center of the disc 7 and beyond the boundary of the recess 8. The recess 8 is deep enough so as to open into the slot 13. As will be appreciated by those ordinarily skilled in the art, the upper metal plate 2 through the metal plate 7, pro vides the electrical connection to the cathode electrode of the thyristor 6. The lower metal cover plate 3 provides the electrical connection to the anode of the thyristor 6.
- the control lead to the ignition electrode (not shown) is provided by a metal conductor 9 which extends through an insulating tube 16 lying in the bottom of the slot 13 and extending into the edge of the well 8.
- the inner end of the control line 9 is in the form of a coil spring projecting downwardly into the well 8 into spring pressed contact with the ignition electrode (not shown).
- the wall of the well 8 is provided with an insulating ring 12.
- the top of the well at the point where the control line 9 enters the vicinity of the well is closed off by an insulating plate 11. This insulating plate 11 presses down on the coil 10 which forms the inner end of the control line 9 into a pressure contact with the ignition electrode.
- the control line 9 at its outer end, extends into a socket which is mounted in a gas tight fit in the wall 1.
- the outer end of the control line 9 has a wavy shape in order to make a good contact with the inner wall of the tubular metal socket 15 which extends through the wall 1 in a gas tight fit.
- the socket 15 pro vides a suitable terminal connection for the ignition electrode.
- the insulating plate 11 which covers the tubular insulating lining 12 of the recess 8, rests against parts of the metal plate 7, since the slot 13 is substantially less in width than the diameter of the insulating disc-shaped plate 11.
- connection of the control electrode of the semiconductor element 6 to the housing is simple to execute.
- insulating plate ll is inserted into the recess 8 in the metal plate 7.
- the control line 9 is introduced through the recess 8 into the slot 13 in such a manner that the spiral spring It) lies in the recess 8.
- the spiral spring 10 is clamped by means of the elastic insulating ring 12 in the recess 8.
- the control line 9 has been previously provided with the insulating tube 16.
- the plate 7 with its individual components is placed from above onto the semiconductor element 6 which has previously been inserted in the subsidiary housing consisting of the insulating ring-shaped wall member 1, the metal plate 3, and the metal ring 5.
- the spiral spring 10 projects somewhat beyond the under surface of the metal plate 7 in the unloading state, and is, therefore, pressed against the ignition electrode of the semiconductor element 6 when the upper cover plate 2 is placed in position.
- the pressure of the spring 10 is determined by its spring constant and the pitch of the spring, and both values may be relatively accurately adhered to.
- the metal plate 7 is placed in position, and the end 14 of the control line 9 is simultaneously threaded into the opening of the socket 15 where it is elastically held.
- the cover plate 2 can be connected subsequently with the metal ring 4 to the insulating ring-shaped wall 1.
- the control line 9 consists of a good conductive springy metal such as beryllium bronze.
- a thyristor with a disc-shaped housing comprising an insulating ring, two metal cover plates connected in gas tight fashion to said ring, a semiconductor element having an ignition electrode, a control line having one end passing into an opening in said housing, and its other end resting on said ignition electrode, a metal plate arranged between one of the cover plates and said semiconductor element, said metal plate having a recess for the other end of said control line, one of the metal housing components having a slot therein in which is arranged at least a part of the control line, in said slot opening into said recess, said recess being provided with an abutment on said metal plate facing said semiconductor element, the end of the control line which rests on said ignition electrode being designed as a coil spring disposed in compression against said igniton electrode and against said abutment, and means for clamping said control line inclcuding said spring to said metal plate including an elastic insulating ring having an outer surface in engagement with the surface of said recess and an inner surface embracing said spring,
- a disc-shaped gas tight thyristor housing assembly comprising an insulating ring-shaped wall, a conductive socket extending in gas tight relation through said ring shaped wall, said socket being closed at its outer end and being open at its inner end, top and bottom discshaped end plates, a pair of mounting flanges secured respectively to said end plates and to said ring-shaped wall.
- an intermediate metal plate below said upper end plate and in electrical contact therewith a thyristor having anode, cathode and ignition electrodes between said intermediate plate and the lower of said end plates, said intermediate plate having a centrally located cav ity in its lower surface, said intermediate plate having a slot in its upper surface extending radially inwardly from its outer edge to a point beyond said cavity and in communication therewith, said intermediate plate providing electrical contact with said cathode electrode, said lower end plate having electrical contact with said anode electrode, a Control line extending radially inwardly through said ring-shaped wall, along the length of said slot to a point within said cavity, an insulating tube surrounding said control line where said control line is located in said slot, an insulating ring lining said cavity, the inner end of said control line terminated in a downwardly extending coil of springy electrical conductive material into contact with said ignition electrode and embraced by said insulating ring an insulating cap closing the inner end of said cavity and against which the upper end of said coil
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Thyristors (AREA)
- Spark Plugs (AREA)
- Wire Bonding (AREA)
- Ignition Installations For Internal Combustion Engines (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE722246423A DE2246423C3 (de) | 1972-09-21 | 1972-09-21 | Thyristor mit scheibenförmigem Gehäuse |
Publications (1)
Publication Number | Publication Date |
---|---|
US3886586A true US3886586A (en) | 1975-05-27 |
Family
ID=5857001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US39740373 Expired - Lifetime US3886586A (en) | 1972-09-21 | 1973-09-14 | Thyristor housing assembly |
Country Status (12)
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4158850A (en) * | 1976-08-13 | 1979-06-19 | Siemens Aktiengesellschaft | Thyristor having improved cooling and improved high frequency operation with adjacent control terminals |
US4302767A (en) * | 1978-09-16 | 1981-11-24 | Brown, Boveri & Cie Aktiengesellschaft | Controlled power-semiconductor component having an annular cage |
US4383355A (en) * | 1978-09-07 | 1983-05-17 | Bbc Brown, Boveri & Company, Limited | Method for the production of a sealed housing for a disk shaped semiconductor body which exhibits at least one pn-transition |
US4591896A (en) * | 1982-03-05 | 1986-05-27 | Hitachi, Ltd. | Pressure-contact sealing arrangement for a semiconductor pellet |
WO2005078461A3 (de) * | 2004-02-13 | 2008-12-18 | Hsp Hochspannungsgeraete Porz | Durchführung mit leistungshalbleiterbauelement |
RU2591744C2 (ru) * | 2014-12-08 | 2016-07-20 | Открытое акционерное общество "Электровыпрямитель" | Тиристор |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2728313A1 (de) * | 1977-06-23 | 1979-01-04 | Siemens Ag | Halbleiterbauelement |
FR2440077A1 (fr) * | 1978-10-23 | 1980-05-23 | Transformation En Cie Indle | Conteneur pour composant electronique de puissance a semi-conducteur et son procede de fabrication |
JPS62101072A (ja) * | 1985-10-25 | 1987-05-11 | シ−メンス、アクチエンゲゼルシヤフト | サイリスタ |
JP4867381B2 (ja) * | 2006-02-14 | 2012-02-01 | トヨタ紡織株式会社 | 順送りプレス加工装置の位置合わせ機構 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3586932A (en) * | 1969-12-12 | 1971-06-22 | Gen Electric | Five layer gate controlled thyristor with novel turn on characteristics |
US3684592A (en) * | 1969-09-30 | 1972-08-15 | Westinghouse Electric Corp | Passivated surfaces and protective coatings for semiconductor devices and processes for producing the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4124820Y1 (enrdf_load_stackoverflow) * | 1964-09-22 | 1966-12-19 | ||
GB1174146A (en) * | 1967-08-09 | 1969-12-10 | Ass Elect Ind | Improvements in or relating to Semiconductor Devices |
US3599057A (en) * | 1969-02-03 | 1971-08-10 | Gen Electric | Semiconductor device with a resilient lead construction |
CH505463A (de) * | 1969-09-18 | 1971-03-31 | Bbc Brown Boveri & Cie | Halbleiteranordnung |
BE790502A (fr) * | 1971-10-26 | 1973-04-25 | Westinghouse Electric Corp | Dispositif semiconducteur encapsule a l'aide d'un elastomere |
-
1972
- 1972-09-21 DE DE722246423A patent/DE2246423C3/de not_active Expired
-
1973
- 1973-06-26 GB GB3034273A patent/GB1379017A/en not_active Expired
- 1973-07-05 CH CH982573A patent/CH562514A5/xx not_active IP Right Cessation
- 1973-07-19 AT AT639673A patent/AT322041B/de not_active IP Right Cessation
- 1973-08-10 NL NL7311103A patent/NL7311103A/xx unknown
- 1973-09-14 US US39740373 patent/US3886586A/en not_active Expired - Lifetime
- 1973-09-18 IT IT2901973A patent/IT993272B/it active
- 1973-09-20 JP JP10641173A patent/JPS4971876A/ja active Pending
- 1973-09-20 FR FR7333756A patent/FR2200626B1/fr not_active Expired
- 1973-09-20 CA CA181,510A patent/CA998475A/en not_active Expired
- 1973-09-21 SE SE7312920A patent/SE395202B/xx unknown
- 1973-09-21 BE BE135914A patent/BE805166A/xx unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3684592A (en) * | 1969-09-30 | 1972-08-15 | Westinghouse Electric Corp | Passivated surfaces and protective coatings for semiconductor devices and processes for producing the same |
US3586932A (en) * | 1969-12-12 | 1971-06-22 | Gen Electric | Five layer gate controlled thyristor with novel turn on characteristics |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4158850A (en) * | 1976-08-13 | 1979-06-19 | Siemens Aktiengesellschaft | Thyristor having improved cooling and improved high frequency operation with adjacent control terminals |
US4383355A (en) * | 1978-09-07 | 1983-05-17 | Bbc Brown, Boveri & Company, Limited | Method for the production of a sealed housing for a disk shaped semiconductor body which exhibits at least one pn-transition |
US4302767A (en) * | 1978-09-16 | 1981-11-24 | Brown, Boveri & Cie Aktiengesellschaft | Controlled power-semiconductor component having an annular cage |
US4591896A (en) * | 1982-03-05 | 1986-05-27 | Hitachi, Ltd. | Pressure-contact sealing arrangement for a semiconductor pellet |
WO2005078461A3 (de) * | 2004-02-13 | 2008-12-18 | Hsp Hochspannungsgeraete Porz | Durchführung mit leistungshalbleiterbauelement |
RU2591744C2 (ru) * | 2014-12-08 | 2016-07-20 | Открытое акционерное общество "Электровыпрямитель" | Тиристор |
Also Published As
Publication number | Publication date |
---|---|
SE395202B (sv) | 1977-08-01 |
JPS4971876A (enrdf_load_stackoverflow) | 1974-07-11 |
AT322041B (de) | 1975-04-25 |
IT993272B (it) | 1975-09-30 |
DE2246423B2 (de) | 1978-07-20 |
CA998475A (en) | 1976-10-12 |
NL7311103A (enrdf_load_stackoverflow) | 1974-03-25 |
DE2246423C3 (de) | 1979-03-08 |
DE2246423A1 (de) | 1974-04-04 |
FR2200626A1 (enrdf_load_stackoverflow) | 1974-04-19 |
GB1379017A (en) | 1975-01-02 |
BE805166A (fr) | 1974-01-16 |
FR2200626B1 (enrdf_load_stackoverflow) | 1978-02-10 |
CH562514A5 (enrdf_load_stackoverflow) | 1975-05-30 |
SE7312920L (enrdf_load_stackoverflow) | 1974-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3611055A (en) | Solid electrolyte capacitor | |
US3886586A (en) | Thyristor housing assembly | |
JP4384279B2 (ja) | 半導体装置 | |
US2785349A (en) | Electric semi-conducting devices | |
US3252060A (en) | Variable compression contacted semiconductor devices | |
US3842231A (en) | Contact spring set for an electromagnetic relay | |
US3654529A (en) | Loose contact press pack | |
US4012658A (en) | Electric lamps mounted in a flanged cap | |
US2864980A (en) | Sealed current rectifier | |
US3599057A (en) | Semiconductor device with a resilient lead construction | |
US3992717A (en) | Housing for a compression bonded encapsulation of a semiconductor device | |
GB1089476A (en) | Semiconductor devices | |
US2934588A (en) | Semiconductor housing structure | |
US2323148A (en) | Electrical contact assembly for use in electron discharge devices | |
US3476986A (en) | Pressure contact semiconductor devices | |
US2498666A (en) | Rectifier unit | |
US3931635A (en) | Semiconductor device with a control electrode in pressure contact with the semiconductor disc | |
US3576066A (en) | Method of making vacuum components | |
US3714488A (en) | Pick-up tube envelope sealant extending into groove of annular target support | |
US3458780A (en) | Wedge bonded leads for semiconductor devices | |
US3089067A (en) | Semiconductor device | |
US4063348A (en) | Unique packaging method for use on large semiconductor devices | |
JPS63298129A (ja) | 半導体式圧力変換器 | |
US3118717A (en) | Elastic lamps, constructions, mountings and receptacles | |
US2270337A (en) | Electrical contact assembly |