US3877183A - Method of polishing semiconductor surfaces - Google Patents
Method of polishing semiconductor surfaces Download PDFInfo
- Publication number
- US3877183A US3877183A US284167A US28416772A US3877183A US 3877183 A US3877183 A US 3877183A US 284167 A US284167 A US 284167A US 28416772 A US28416772 A US 28416772A US 3877183 A US3877183 A US 3877183A
- Authority
- US
- United States
- Prior art keywords
- polishing
- metal
- silicate
- group
- precipitated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000007517 polishing process Methods 0.000 title abstract description 9
- 238000005498 polishing Methods 0.000 claims abstract description 34
- 239000000725 suspension Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052788 barium Inorganic materials 0.000 claims description 7
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 7
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 239000011575 calcium Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910052914 metal silicate Inorganic materials 0.000 claims description 6
- 238000001556 precipitation Methods 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052910 alkali metal silicate Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000012431 aqueous reaction media Substances 0.000 claims description 2
- 150000004760 silicates Chemical class 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 16
- 150000003839 salts Chemical class 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 9
- 239000000843 powder Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002244 precipitate Substances 0.000 description 5
- 239000010431 corundum Substances 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007790 scraping Methods 0.000 description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- 239000012267 brine Substances 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 125000005624 silicic acid group Chemical class 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical class F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 241000212342 Sium Species 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 235000013871 bee wax Nutrition 0.000 description 1
- 229940092738 beeswax Drugs 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Definitions
- Disks made of semiconductor materials which are in articular demand as substrata for the opitaxial grow- .-r.g process (a process that is becoming more and more important in the manufacture of semiconductors) have been produced by a mechanical polishing process, using abrasives like corundum powders, zirconium dioxide, cerium oxide, diamonds, or silicon carbide. Since mechanical polishing has always caused a more or less severe destruction of the surface layer, which disturbes the subsequent epitaxial growing process, the disks must undergo a chemical cauterization or etching before they can be further processed. And this, of course, impairs the oft required smoothness of the surfaces.
- silicic acid brine and silicic acid gels as polishing substances. These can be produced, for example, by acidifying a silicate solution or stirring in water the silicic acid formed by the burning of silicon tetrachloride. Unlike the above-mentioned crystalline polishing powders, the silicic acid brine and gels are amorphous, i.e. they show no crystalline reflex, under X-ray examination. Their polishing effect, too, is very slight.
- Salts of metals of the second and third Group and Subgroup of the Periodic System, as well as silicateforming salts of heavy metals, for instance, zirconium, iron, lead, nickel, cobalt, are suitable as silicateforming metallic salts.
- silicateforming metallic salts for instance, zirconium, iron, lead, nickel, cobalt
- soluble salts of magnes sium, calcium, strontium, barium, zinc or aluminum are suitable as silicateforming metallic salts.
- silicic acid solutions and their salts we mean solutions having anions that are made up of one or more silicon atoms, that are coordinately surrounded by oxygen atoms, and that the oxygen atoms may have attached thereto hydrogen or organic groups; for instance SiO H siof HSiOf', H3SIO41, Shoe HSI2O6 3, HgSIzOs K H3SI20 Precipitation of alkali silicate solutions, for instance sodium silicate solutions, have turned out here to be of particular value.
- Silicic acid esters for example, may be used as derivatives of silicic acid, after they have been partly or completely hydrolyzed for instance, partly hydrolyzed silicic acid tetra-n-butyl ester.
- Silicon fluorides which are difficultly soluble are used as silicon fluorides, after they have been precipitated by the addition of silicon fluoride-forming metallic compounds or their solutions into solutions of fluosilicic acid, their salts or derivatives.
- Salts, oxides or hydroxides of the metals of the first, second, third Groups of the Periodic System, particularly sodium, potassium, magnesium, calcium, barium, aluminum or zinc, are suitable here as silicon fluoride-forming metallic compounds. Solutions of the metal salts can be added individually as well as in mixtures.
- the polishing suspensions produced in accordance with the invention are characterized by a considerably higher rate of erosion without causing, however, any marked distruction of the crystalline structure on the burnished surfaces of the semiconductor disks.
- the polishing suspension applied in the polishing process may be used as either a neutral or an alkaline solution.
- polishing suspensions produced in accordance with the invention contain no oversize grains to cause scraping.
- polishing suspensions are manufactured by the simple process of pouring together solutions of raw materials previously filtered or decanted, any impurities caused by foreign bodies are easily eliminated.
- Round silicon disks of 32 mm diameter and 300 p. thick, obtained by sawing of a monocrystalline silicon rod, are fine-polished with corundum powder (grain size of 5 p.) abrading or wearing each side by 50 t. Every 12 disks are cemented on with bee's wax to a circular refined steel alloy supporting plate of 180 mm diameter, then applied to a rotary plate or dish (450 mm diameter) of a polishing machine covered with a polishing cloth, and finally loaded with 1.5 kg.
- the rotary dish is made to revolve at a speed of 90 rpm.
- the polishing suspension drips out onto the rotary dish at the rate of l to 2 drops per minute.
- the surface of the silicon disk is polished smooth and free of scratches and ready for epitaxial coating.
- EXAMPLE 3 Disks of a thickness of about 300 microns are sawed off a monocrystalline rod of gallium arsenide and finepolished with corundum powder of a grain size of about 2 to 3 microns. in this way about 30 microns were worn off each side.
- the polishing is performed as in Example 1, and an aqueous suspension of barium hexafluosilicate, manufactured as indicated below, is used as the polishing means:
- Process of finish polishing the surface of a semiconductor which comprises applying to said surface a polishing agent consisting essentially of a finely divided, freshly precipitated, difficultly soluble member of the group consisting of a metal silicate and a metal fluosilicate having a particle size range from about 20 to about 60 mp., said metal silicate being precipitated from an aqueous solution of an alkali silicate by addition of a water soluble compound of a metal of the group consisting of zirconium, iron, lead, nickel, cobalt, magnesium, calcium, strontium, barium, zinc and aluminum, and said metal fluosilicate being precipitated' from an aqueous solution of fluosilicic acid or an alkali fluosilicate by addition of a water soluble compound of a metal of the group consisting of sodium, potassium, calcium, barium and aluminum, said freshly precipitated difficultly soluble metal silicate or fluosilicate being in suspension in the aqueous reaction medium in which it is formed by precipitation.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681752163 DE1752163A1 (de) | 1968-04-11 | 1968-04-11 | Verfahren zum Polieren von Halbleiteroberflaechen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3877183A true US3877183A (en) | 1975-04-15 |
Family
ID=5692658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US284167A Expired - Lifetime US3877183A (en) | 1968-04-11 | 1972-08-28 | Method of polishing semiconductor surfaces |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3877183A (enrdf_load_stackoverflow) |
| BE (1) | BE731353A (enrdf_load_stackoverflow) |
| CH (1) | CH505466A (enrdf_load_stackoverflow) |
| DE (1) | DE1752163A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2006054A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1234894A (enrdf_load_stackoverflow) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4064660A (en) * | 1975-09-01 | 1977-12-27 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for preparing haze free semiconductor surfaces and surfaces so made |
| US4070797A (en) * | 1975-07-14 | 1978-01-31 | Wacker-Chemitronic Gesellshaft Fur Elektronic Grundstoffe Mbh | Nitrogen-free anionic and non-ionic surfactants in a process for producing a haze-free semiconduct |
| US4226623A (en) * | 1979-02-19 | 1980-10-07 | Fujimi Kenmazai Kogyo Co., Ltd. | Method for polishing a single crystal or gadolinium gallium garnet |
| US4588421A (en) * | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
| US5993685A (en) * | 1997-04-02 | 1999-11-30 | Advanced Technology Materials | Planarization composition for removing metal films |
| US6319095B1 (en) * | 2000-03-09 | 2001-11-20 | Agere Systems Guardian Corp. | Colloidal suspension of abrasive particles containing magnesium as CMP slurry |
| US20150013235A1 (en) * | 2011-12-27 | 2015-01-15 | Konica Minolta, Inc. | Method For Separating Polishing Material And Regenerated Polishing Material |
| US9158203B2 (en) | 2006-12-21 | 2015-10-13 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
| CN111253910A (zh) * | 2020-03-18 | 2020-06-09 | 昆山捷纳电子材料有限公司 | 一种无机聚电解质-氧化硅复合抛光磨粒的制备方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2327036A1 (fr) * | 1975-10-08 | 1977-05-06 | Du Pont | Procede de polissage de materiaux semi-conducteurs de germanium et de silicium |
| JPS5935429A (ja) * | 1982-08-12 | 1984-02-27 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 半導体ウエハの製造方法 |
| DE3237235C2 (de) * | 1982-10-07 | 1986-07-10 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum Polieren von III-V-Halbleiteroberflächen |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2275049A (en) * | 1942-03-03 | Polish | ||
| US2375823A (en) * | 1941-10-16 | 1945-05-15 | Interchem Corp | Polishing composition |
| US2375825A (en) * | 1941-10-16 | 1945-05-15 | Interchem Corp | Polishing compositions |
| US2399237A (en) * | 1942-12-15 | 1946-04-30 | William T Maloney | Polishing material and process of preparing same |
| US2955030A (en) * | 1959-02-25 | 1960-10-04 | Nat Lead Co | Polishing compositions |
| US3170273A (en) * | 1963-01-10 | 1965-02-23 | Monsanto Co | Process for polishing semiconductor materials |
| US3527028A (en) * | 1967-09-26 | 1970-09-08 | Bell Telephone Labor Inc | Preparation of semiconductor surfaces |
| US3541017A (en) * | 1969-02-04 | 1970-11-17 | Indiana University Foundation | Denture cleanser preparations comprising zirconium silicate and zirconium dioxide |
| US3647381A (en) * | 1968-04-08 | 1972-03-07 | Gabriel Reiter | Dental-prophylaxis composition |
| US3754941A (en) * | 1971-01-04 | 1973-08-28 | Colgate Palmolive Co | Removal of metallic stains from porcelain surfaces |
-
1968
- 1968-04-11 DE DE19681752163 patent/DE1752163A1/de active Granted
-
1969
- 1969-04-10 GB GB08372/69A patent/GB1234894A/en not_active Expired
- 1969-04-10 BE BE731353D patent/BE731353A/xx unknown
- 1969-04-10 FR FR6911069A patent/FR2006054A1/fr not_active Withdrawn
- 1969-04-11 CH CH556969A patent/CH505466A/de not_active IP Right Cessation
-
1972
- 1972-08-28 US US284167A patent/US3877183A/en not_active Expired - Lifetime
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2275049A (en) * | 1942-03-03 | Polish | ||
| US2375823A (en) * | 1941-10-16 | 1945-05-15 | Interchem Corp | Polishing composition |
| US2375825A (en) * | 1941-10-16 | 1945-05-15 | Interchem Corp | Polishing compositions |
| US2399237A (en) * | 1942-12-15 | 1946-04-30 | William T Maloney | Polishing material and process of preparing same |
| US2955030A (en) * | 1959-02-25 | 1960-10-04 | Nat Lead Co | Polishing compositions |
| US3170273A (en) * | 1963-01-10 | 1965-02-23 | Monsanto Co | Process for polishing semiconductor materials |
| US3527028A (en) * | 1967-09-26 | 1970-09-08 | Bell Telephone Labor Inc | Preparation of semiconductor surfaces |
| US3647381A (en) * | 1968-04-08 | 1972-03-07 | Gabriel Reiter | Dental-prophylaxis composition |
| US3541017A (en) * | 1969-02-04 | 1970-11-17 | Indiana University Foundation | Denture cleanser preparations comprising zirconium silicate and zirconium dioxide |
| US3754941A (en) * | 1971-01-04 | 1973-08-28 | Colgate Palmolive Co | Removal of metallic stains from porcelain surfaces |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4070797A (en) * | 1975-07-14 | 1978-01-31 | Wacker-Chemitronic Gesellshaft Fur Elektronic Grundstoffe Mbh | Nitrogen-free anionic and non-ionic surfactants in a process for producing a haze-free semiconduct |
| US4064660A (en) * | 1975-09-01 | 1977-12-27 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for preparing haze free semiconductor surfaces and surfaces so made |
| US4226623A (en) * | 1979-02-19 | 1980-10-07 | Fujimi Kenmazai Kogyo Co., Ltd. | Method for polishing a single crystal or gadolinium gallium garnet |
| US4588421A (en) * | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
| US5993685A (en) * | 1997-04-02 | 1999-11-30 | Advanced Technology Materials | Planarization composition for removing metal films |
| US6267909B1 (en) * | 1997-04-02 | 2001-07-31 | Advanced Technology & Materials Inc. | Planarization composition for removing metal films |
| US6319095B1 (en) * | 2000-03-09 | 2001-11-20 | Agere Systems Guardian Corp. | Colloidal suspension of abrasive particles containing magnesium as CMP slurry |
| US9158203B2 (en) | 2006-12-21 | 2015-10-13 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
| TWI509690B (zh) * | 2006-12-21 | 2015-11-21 | Entegris Inc | 選擇性移除氮化矽之組合物及方法 |
| US9691629B2 (en) | 2006-12-21 | 2017-06-27 | Entegris, Inc. | Compositions and methods for the selective removal of silicon nitride |
| US20150013235A1 (en) * | 2011-12-27 | 2015-01-15 | Konica Minolta, Inc. | Method For Separating Polishing Material And Regenerated Polishing Material |
| US10017675B2 (en) * | 2011-12-27 | 2018-07-10 | Konica Minolta, Inc. | Method for separating polishing material and regenerated polishing material |
| CN111253910A (zh) * | 2020-03-18 | 2020-06-09 | 昆山捷纳电子材料有限公司 | 一种无机聚电解质-氧化硅复合抛光磨粒的制备方法 |
| CN111253910B (zh) * | 2020-03-18 | 2021-07-16 | 昆山捷纳电子材料有限公司 | 一种无机聚电解质-氧化硅复合抛光磨粒的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1752163A1 (de) | 1971-05-13 |
| DE1752163B2 (enrdf_load_stackoverflow) | 1974-07-25 |
| CH505466A (de) | 1971-03-31 |
| GB1234894A (en) | 1971-06-09 |
| DE1752163C3 (enrdf_load_stackoverflow) | 1975-03-20 |
| BE731353A (enrdf_load_stackoverflow) | 1969-10-10 |
| FR2006054A1 (enrdf_load_stackoverflow) | 1969-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6948423B2 (ja) | シリカ系複合微粒子分散液、その製造方法及びシリカ系複合微粒子分散液を含む研磨用スラリー | |
| US3877183A (en) | Method of polishing semiconductor surfaces | |
| EP0411413B1 (en) | Method and composition for polishing metal surfaces | |
| JP5860587B2 (ja) | 研磨用シリカゾル、研磨用組成物及び研磨用シリカゾルの製造方法 | |
| TW593649B (en) | Cerium-based abrasive slurry and method for manufacturing cerium-based abrasive slurry | |
| US20040154230A1 (en) | Polishing formulations for SiO2-based substrates | |
| TW201800339A (zh) | 氧化矽系複合微粒子分散液、其製造方法及含有氧化矽系複合微粒子的研磨用研磨粒分散液 | |
| EP0121706B1 (en) | Method for polishing titanium carbide containing surfaces | |
| JPH04336971A (ja) | 結合研磨体、研磨材粒子及びその製造方法 | |
| JP6829007B2 (ja) | シリカ系複合微粒子分散液、その製造方法及びシリカ系複合微粒子分散液を含む研磨用スラリー | |
| JPH11246849A (ja) | ＮｉＰめっきしたディスクを研磨するためのコロイドシリカスラリー | |
| US4022625A (en) | Polishing composition and method of polishing | |
| US3328141A (en) | Process for polishing crystalline silicon | |
| US4064660A (en) | Process for preparing haze free semiconductor surfaces and surfaces so made | |
| JP2019089670A (ja) | セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液 | |
| JP2001150334A (ja) | 半導体ウェーハーの研磨方法及び研磨剤 | |
| JP2017193692A (ja) | シリカ系複合微粒子分散液、その製造方法及びシリカ系複合微粒子分散液を含む研磨用スラリー | |
| JP6616794B2 (ja) | シリカ系複合微粒子分散液、その製造方法及びシリカ系複合微粒子分散液を含む研磨用砥粒分散液 | |
| JP2017206410A (ja) | シリカ系複合微粒子分散液の製造方法 | |
| KR20020071735A (ko) | 금속 연마재 조성물 및 연마 방법 | |
| JPH06330025A (ja) | ガラス研磨用研磨材 | |
| JP2000026840A (ja) | 研磨材 | |
| JP2021014375A (ja) | セリア系微粒子分散液、その製造方法およびセリア系微粒子分散液を含む研磨用砥粒分散液 | |
| JP2017178703A (ja) | シリカ系複合粒子分散液の製造方法 | |
| JP7620504B2 (ja) | セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液 |