GB1234894A - Process for polishing the surface of semiconductor materials - Google Patents
Process for polishing the surface of semiconductor materialsInfo
- Publication number
- GB1234894A GB1234894A GB08372/69A GB1837269A GB1234894A GB 1234894 A GB1234894 A GB 1234894A GB 08372/69 A GB08372/69 A GB 08372/69A GB 1837269 A GB1837269 A GB 1837269A GB 1234894 A GB1234894 A GB 1234894A
- Authority
- GB
- United Kingdom
- Prior art keywords
- polishing
- solution
- suspension
- sio
- discs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005498 polishing Methods 0.000 title abstract 13
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000463 material Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000000243 solution Substances 0.000 abstract 9
- 150000003839 salts Chemical class 0.000 abstract 7
- 239000000725 suspension Substances 0.000 abstract 7
- 229910052751 metal Inorganic materials 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 5
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000008367 deionised water Substances 0.000 abstract 3
- 229910021641 deionized water Inorganic materials 0.000 abstract 3
- 239000002244 precipitate Substances 0.000 abstract 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical class [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical class [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Chemical class 0.000 abstract 2
- 229910052782 aluminium Chemical class 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical class [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 239000007864 aqueous solution Substances 0.000 abstract 2
- -1 barium hexafluorosilicate Chemical compound 0.000 abstract 2
- 229910052749 magnesium Inorganic materials 0.000 abstract 2
- 239000011777 magnesium Substances 0.000 abstract 2
- 150000002736 metal compounds Chemical class 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 2
- 239000000843 powder Substances 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 239000011701 zinc Chemical class 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical class [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- FQNGWRSKYZLJDK-UHFFFAOYSA-N [Ca].[Ba] Chemical compound [Ca].[Ba] FQNGWRSKYZLJDK-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 230000002378 acidificating effect Effects 0.000 abstract 1
- 150000001298 alcohols Chemical class 0.000 abstract 1
- 239000007900 aqueous suspension Substances 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical class [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 abstract 1
- 235000013871 bee wax Nutrition 0.000 abstract 1
- 239000012166 beeswax Substances 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 239000011575 calcium Chemical class 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 238000007865 diluting Methods 0.000 abstract 1
- 150000002148 esters Chemical class 0.000 abstract 1
- 239000004744 fabric Substances 0.000 abstract 1
- 229910001385 heavy metal Inorganic materials 0.000 abstract 1
- 150000004679 hydroxides Chemical class 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 150000002576 ketones Chemical class 0.000 abstract 1
- 239000011133 lead Substances 0.000 abstract 1
- 229910052914 metal silicate Inorganic materials 0.000 abstract 1
- 230000007935 neutral effect Effects 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000011591 potassium Substances 0.000 abstract 1
- 229910052700 potassium Inorganic materials 0.000 abstract 1
- 235000019353 potassium silicate Nutrition 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 125000005624 silicic acid group Chemical class 0.000 abstract 1
- 239000011734 sodium Substances 0.000 abstract 1
- 229910052708 sodium Inorganic materials 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical class [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 abstract 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681752163 DE1752163A1 (de) | 1968-04-11 | 1968-04-11 | Verfahren zum Polieren von Halbleiteroberflaechen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1234894A true GB1234894A (en) | 1971-06-09 |
Family
ID=5692658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08372/69A Expired GB1234894A (en) | 1968-04-11 | 1969-04-10 | Process for polishing the surface of semiconductor materials |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3877183A (enrdf_load_stackoverflow) |
| BE (1) | BE731353A (enrdf_load_stackoverflow) |
| CH (1) | CH505466A (enrdf_load_stackoverflow) |
| DE (1) | DE1752163A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2006054A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1234894A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008080096A3 (en) * | 2006-12-21 | 2008-11-06 | Advanced Tech Materials | Compositions and methods for the selective removal of silicon nitride |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2531431C3 (de) * | 1975-07-14 | 1979-03-01 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Poliermittel zur Herstellung schleierfreier Halbleiteroberflächen |
| DE2538855A1 (de) * | 1975-09-01 | 1977-03-10 | Wacker Chemitronic | Verfahren zur herstellung von schleierfreien halbleiteroberflaechen, insbesondere schleierfreien oberflaechen von (111)-orientiertem galliumarsenid |
| FR2327036A1 (fr) * | 1975-10-08 | 1977-05-06 | Du Pont | Procede de polissage de materiaux semi-conducteurs de germanium et de silicium |
| JPS55113700A (en) * | 1979-02-19 | 1980-09-02 | Fujimi Kenmazai Kogyo Kk | Polishing method for gadolinium gallium garnet single crystal |
| JPS5935429A (ja) * | 1982-08-12 | 1984-02-27 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 半導体ウエハの製造方法 |
| DE3237235C2 (de) * | 1982-10-07 | 1986-07-10 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum Polieren von III-V-Halbleiteroberflächen |
| US4588421A (en) * | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
| US5993685A (en) * | 1997-04-02 | 1999-11-30 | Advanced Technology Materials | Planarization composition for removing metal films |
| US6319095B1 (en) * | 2000-03-09 | 2001-11-20 | Agere Systems Guardian Corp. | Colloidal suspension of abrasive particles containing magnesium as CMP slurry |
| WO2013099666A1 (ja) * | 2011-12-27 | 2013-07-04 | コニカミノルタ株式会社 | 研磨材分離方法及び再生研磨材 |
| CN111253910B (zh) * | 2020-03-18 | 2021-07-16 | 昆山捷纳电子材料有限公司 | 一种无机聚电解质-氧化硅复合抛光磨粒的制备方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2275049A (en) * | 1942-03-03 | Polish | ||
| US2375825A (en) * | 1941-10-16 | 1945-05-15 | Interchem Corp | Polishing compositions |
| US2375823A (en) * | 1941-10-16 | 1945-05-15 | Interchem Corp | Polishing composition |
| US2399237A (en) * | 1942-12-15 | 1946-04-30 | William T Maloney | Polishing material and process of preparing same |
| US2955030A (en) * | 1959-02-25 | 1960-10-04 | Nat Lead Co | Polishing compositions |
| US3170273A (en) * | 1963-01-10 | 1965-02-23 | Monsanto Co | Process for polishing semiconductor materials |
| US3527028A (en) * | 1967-09-26 | 1970-09-08 | Bell Telephone Labor Inc | Preparation of semiconductor surfaces |
| US3647381A (en) * | 1968-04-08 | 1972-03-07 | Gabriel Reiter | Dental-prophylaxis composition |
| US3541017A (en) * | 1969-02-04 | 1970-11-17 | Indiana University Foundation | Denture cleanser preparations comprising zirconium silicate and zirconium dioxide |
| US3754941A (en) * | 1971-01-04 | 1973-08-28 | Colgate Palmolive Co | Removal of metallic stains from porcelain surfaces |
-
1968
- 1968-04-11 DE DE19681752163 patent/DE1752163A1/de active Granted
-
1969
- 1969-04-10 BE BE731353D patent/BE731353A/xx unknown
- 1969-04-10 GB GB08372/69A patent/GB1234894A/en not_active Expired
- 1969-04-10 FR FR6911069A patent/FR2006054A1/fr not_active Withdrawn
- 1969-04-11 CH CH556969A patent/CH505466A/de not_active IP Right Cessation
-
1972
- 1972-08-28 US US284167A patent/US3877183A/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008080096A3 (en) * | 2006-12-21 | 2008-11-06 | Advanced Tech Materials | Compositions and methods for the selective removal of silicon nitride |
| US8778210B2 (en) | 2006-12-21 | 2014-07-15 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
| US9158203B2 (en) | 2006-12-21 | 2015-10-13 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
| TWI509690B (zh) * | 2006-12-21 | 2015-11-21 | Entegris Inc | 選擇性移除氮化矽之組合物及方法 |
| US9691629B2 (en) | 2006-12-21 | 2017-06-27 | Entegris, Inc. | Compositions and methods for the selective removal of silicon nitride |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1752163B2 (enrdf_load_stackoverflow) | 1974-07-25 |
| CH505466A (de) | 1971-03-31 |
| FR2006054A1 (enrdf_load_stackoverflow) | 1969-12-19 |
| US3877183A (en) | 1975-04-15 |
| DE1752163A1 (de) | 1971-05-13 |
| BE731353A (enrdf_load_stackoverflow) | 1969-10-10 |
| DE1752163C3 (enrdf_load_stackoverflow) | 1975-03-20 |
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