US3865554A - Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique - Google Patents

Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique Download PDF

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Publication number
US3865554A
US3865554A US183169A US18316971A US3865554A US 3865554 A US3865554 A US 3865554A US 183169 A US183169 A US 183169A US 18316971 A US18316971 A US 18316971A US 3865554 A US3865554 A US 3865554A
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US
United States
Prior art keywords
furnace
crucible
pressure
crystal
pulling rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US183169A
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English (en)
Inventor
Joseph F Wenckus
Roger A Castonguay
Bernard C Hanfly
Francis J Mallahan
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Arthur D Little Inc
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Arthur D Little Inc
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Publication date
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Priority to US183169A priority Critical patent/US3865554A/en
Priority to DE2240788A priority patent/DE2240788A1/de
Priority to GB3912472A priority patent/GB1392749A/en
Priority to FR7231094A priority patent/FR2153247B3/fr
Priority to JP47091002A priority patent/JPS4839377A/ja
Application granted granted Critical
Publication of US3865554A publication Critical patent/US3865554A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Definitions

  • ABSTRACT Furnace assembly providing a working volume the pressure in which may range from 10 torr to 135 atmospheres. Controlled temperatures up to 3,000C are attainable.
  • a crystal-pulling rod and a cruciblesupporting rod extend into the furnace. The crystalpulling rod is rotated and driven translationally through an extended excursion in a slow crystalpulling mode and relatively fast positioning mode; while the crucible support rod is rotated and driven translationally through a relatively short excursion in a crucible positioning mode.
  • the main furnace housing is lifted up and swung away to permit ready access to the crucible holding zone for interchange of rf coils and crucible holders as well as for easy safe removal of large crystals suspended from the pulling rod.
  • Means are provided continuously to indicate the precise position of the crystal-pulling rod, to monitor the operation within the furnace by TV, and to control the operations within the furnace from a remote location.
  • This invention relates to an apparatus for growing crystals and more particularly to an apparatus for growing crystals on a large scale by the Czochralski tech nique under controlled atmospheric pressures from torr to 135 atmospheres and at temperatures up to 3,000C.
  • An apparatus suitable for growing many different types of crystals by the Czochralski technique is required to be able to furnish many different controlled conditions.
  • the growing of crystals of a III-V intermetallic compound may require that a very high pressure be maintained around the growing crystal area to control the vaporization of a volatile component such as arsenic or phosphorus in forming an intermetallic arsenide or phosphide.
  • a volatile component such as arsenic or phosphorus in forming an intermetallic arsenide or phosphide.
  • the working zone within the apparatus must be evacuatable to permit control of the zone atmosphere, whether it is pressurized or evacuated during crystal growth.
  • Such a crystal growing apparatus should be capable of growing crystals of oxides, salts, metals, elemental and intermetallic compound semiconductors including the phosphides, arsenides, tellurides, selenides and sulfides and any other inorganic element, compound or mixtures thereof.
  • crystal growing apparatus of this invention hereinafter eferred to as a furnace meets all of these requirements as will be evident from the following detailed description.
  • FIG. 1 is a perspective view of the apparatus of this invention showing the furnace assembly in operational condition, the power supply and the operational console;
  • FIG. 2 is a front view of the furnace assembly of FIG. I illustrating the main furnace housing raised and swung away for access to the working zone;
  • FIGS. 3, 4 and 5 are side, top and end views, respectively, of the crystal-pulling rod driving mechanism
  • FIG. 6 is a top plan view of the furnace assembly
  • FIG. 7 is a side elevational view of the furnace assem-
  • FIGS. 8 and 9 are cross sections through the furnace chamber lift support structure taken along lines 8-8 and 9-9, respectively, of FIG. 7;
  • FIG. 10 is a side elevational view of the crucible support mechansim, vacuum system, pressure-control system and hydraulic system of the furnace assembly
  • FIG. 11 is a front elevational view of the furnace;
  • FIG. 12 is a fragmentary detail of a warning device mounted on the furance housing to prevent opening of the furnace when it is pressurized;
  • FIG. 13 is a front elevational view of the crucible support mechanism, vacuum system, pressure-control system and hydraulic system of the furnace assembly;
  • FIG. I4 is a vertical cross section of the furnace showing one window in cross section and one embodiment of the crucible holder;

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US183169A 1971-09-23 1971-09-23 Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique Expired - Lifetime US3865554A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US183169A US3865554A (en) 1971-09-23 1971-09-23 Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
DE2240788A DE2240788A1 (de) 1971-09-23 1972-08-18 Vorrichtung zum herstellen von kristallen nach dem czochralski-verfahren
GB3912472A GB1392749A (en) 1971-09-23 1972-08-22 Pressure-and temperature-controlled apparatus for large-scale productions by the czochralski technique
FR7231094A FR2153247B3 (fr) 1971-09-23 1972-09-01
JP47091002A JPS4839377A (fr) 1971-09-23 1972-09-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US183169A US3865554A (en) 1971-09-23 1971-09-23 Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique

Publications (1)

Publication Number Publication Date
US3865554A true US3865554A (en) 1975-02-11

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US183169A Expired - Lifetime US3865554A (en) 1971-09-23 1971-09-23 Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique

Country Status (5)

Country Link
US (1) US3865554A (fr)
JP (1) JPS4839377A (fr)
DE (1) DE2240788A1 (fr)
FR (1) FR2153247B3 (fr)
GB (1) GB1392749A (fr)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4014656A (en) * 1973-10-03 1977-03-29 Siemens Aktiengesellschaft Monitoring device for crystal pulling apparatus
US4049384A (en) * 1975-04-14 1977-09-20 Arthur D. Little, Inc. Cold crucible system
US4080172A (en) * 1975-12-29 1978-03-21 Monsanto Company Zone refiner automatic control
DE2759050A1 (de) * 1977-12-30 1979-07-12 Vnii Monokristallov Einrichtung zur zuechtung von einkristallen aus der schmelze
US4190630A (en) * 1978-01-03 1980-02-26 Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv Apparatus for pulling single crystals from melt
US4235848A (en) * 1978-06-15 1980-11-25 Apilat Vitaly Y Apparatus for pulling single crystal from melt on a seed
DE3100245A1 (de) * 1980-01-07 1982-01-14 Emanuel M. 02178 Belmont Mass. Sachs Verfahren und vorrichtung zum kontinuierlichen zuechten von kristallinen oder halb-kristallinen bandaehnlichen koerpern aus einer schmelze
US4367199A (en) * 1980-06-14 1983-01-04 Leybold Heraeus Gmbh Apparatus having coilable pulling element for drawing a monocrystal from a crucible with adjustable speed
FR2522694A1 (fr) * 1982-03-05 1983-09-09 Inst Monokristallov Installation pour l'elaboration d'un monocristal par tirage a partir d'un bain de fusion et procede de dechargement dudit monocristal de ladite installation
US4485072A (en) * 1982-02-24 1984-11-27 Apilat Vitaly Y Apparatus and method of growing and discharging single crystals
US4931624A (en) * 1987-07-10 1990-06-05 Mellen Sr Robert H Thermal distortion free viewing of a heated cavity
US5863326A (en) * 1996-07-03 1999-01-26 Cermet, Inc. Pressurized skull crucible for crystal growth using the Czochralski technique
US5885347A (en) * 1997-01-29 1999-03-23 Komatsu, Ltd. Apparatus and method for lifting single crystals
US5900060A (en) * 1996-07-03 1999-05-04 Cermet, Inc. Pressurized skull crucible apparatus for crystal growth and related system and methods
WO2001000908A1 (fr) * 1999-06-29 2001-01-04 Acti Optics & Engineering, Inc. Dispositif de chauffe pour four a cristaux croissants
US20020175338A1 (en) * 2001-05-01 2002-11-28 Seiji Sarayama Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US6537372B1 (en) 1999-06-29 2003-03-25 American Crystal Technologies, Inc. Heater arrangement for crystal growth furnace
US11077469B2 (en) * 2016-09-08 2021-08-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for sorting silicon wafers according to their bulk lifetime
CN115044961A (zh) * 2022-06-09 2022-09-13 福建晶翔光电科技有限公司 一种氟化钡光学晶体制备装置及其制备方法
CN115896922A (zh) * 2023-02-16 2023-04-04 杭州天桴光电技术有限公司 一种大尺寸氟化钙单晶生长与在位退火的装置
CN117867641A (zh) * 2023-12-28 2024-04-12 蒙城繁枫真空科技有限公司 一种晶体生长设备晶杆快速调整垂直度的设计和方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3116916C2 (de) * 1980-06-14 1984-08-23 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum Ziehen eines Einkristalls aus einem Tiegel mittels eines aufwickelbaren Zugorgans
JPS6041038B2 (ja) * 1981-05-19 1985-09-13 フエロフルイデイクス・コ−ポレイシヨン 結晶成長炉からの結晶の処理装置及び処理方法
SU1397555A1 (ru) * 1985-08-09 1988-05-23 Институт физики твердого тела АН СССР Установка дл выращивани монокристаллов тугоплавких окислов из расплава
TW200936824A (en) * 2008-02-27 2009-09-01 Green Energy Technology Inc Crystal-growing furnace with emergency decompression arrangement

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002320A (en) * 1951-11-16 1961-10-03 Bell Telephone Labor Inc Preparation of silicon material
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
US3353914A (en) * 1964-12-30 1967-11-21 Martin Marietta Corp Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof
US3372003A (en) * 1963-07-19 1968-03-05 Shin Nippon Chisso Hiryo Kabus Apparatus and method for producing silicon single crystals for semiconductor
US3493770A (en) * 1966-03-01 1970-02-03 Ibm Radiation sensitive control system for crystal growing apparatus
US3501406A (en) * 1966-06-13 1970-03-17 Siemens Ag Method for producing rod-shaped silicon monocrystals with homogeneous antimony doping over the entire rod length
US3552931A (en) * 1967-07-14 1971-01-05 Little Inc A Apparatus for imparting translational and rotational motion
US3650701A (en) * 1970-07-22 1972-03-21 Commissariat Energie Atomique Apparatus for growing crystalline bodies

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002320A (en) * 1951-11-16 1961-10-03 Bell Telephone Labor Inc Preparation of silicon material
US3372003A (en) * 1963-07-19 1968-03-05 Shin Nippon Chisso Hiryo Kabus Apparatus and method for producing silicon single crystals for semiconductor
US3353914A (en) * 1964-12-30 1967-11-21 Martin Marietta Corp Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
US3493770A (en) * 1966-03-01 1970-02-03 Ibm Radiation sensitive control system for crystal growing apparatus
US3501406A (en) * 1966-06-13 1970-03-17 Siemens Ag Method for producing rod-shaped silicon monocrystals with homogeneous antimony doping over the entire rod length
US3552931A (en) * 1967-07-14 1971-01-05 Little Inc A Apparatus for imparting translational and rotational motion
US3650701A (en) * 1970-07-22 1972-03-21 Commissariat Energie Atomique Apparatus for growing crystalline bodies

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4014656A (en) * 1973-10-03 1977-03-29 Siemens Aktiengesellschaft Monitoring device for crystal pulling apparatus
US4049384A (en) * 1975-04-14 1977-09-20 Arthur D. Little, Inc. Cold crucible system
US4080172A (en) * 1975-12-29 1978-03-21 Monsanto Company Zone refiner automatic control
DE2759050A1 (de) * 1977-12-30 1979-07-12 Vnii Monokristallov Einrichtung zur zuechtung von einkristallen aus der schmelze
US4190630A (en) * 1978-01-03 1980-02-26 Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv Apparatus for pulling single crystals from melt
US4235848A (en) * 1978-06-15 1980-11-25 Apilat Vitaly Y Apparatus for pulling single crystal from melt on a seed
DE3100245A1 (de) * 1980-01-07 1982-01-14 Emanuel M. 02178 Belmont Mass. Sachs Verfahren und vorrichtung zum kontinuierlichen zuechten von kristallinen oder halb-kristallinen bandaehnlichen koerpern aus einer schmelze
US4367199A (en) * 1980-06-14 1983-01-04 Leybold Heraeus Gmbh Apparatus having coilable pulling element for drawing a monocrystal from a crucible with adjustable speed
US4485072A (en) * 1982-02-24 1984-11-27 Apilat Vitaly Y Apparatus and method of growing and discharging single crystals
FR2522694A1 (fr) * 1982-03-05 1983-09-09 Inst Monokristallov Installation pour l'elaboration d'un monocristal par tirage a partir d'un bain de fusion et procede de dechargement dudit monocristal de ladite installation
US4931624A (en) * 1987-07-10 1990-06-05 Mellen Sr Robert H Thermal distortion free viewing of a heated cavity
US5863326A (en) * 1996-07-03 1999-01-26 Cermet, Inc. Pressurized skull crucible for crystal growth using the Czochralski technique
US5900060A (en) * 1996-07-03 1999-05-04 Cermet, Inc. Pressurized skull crucible apparatus for crystal growth and related system and methods
US5885347A (en) * 1997-01-29 1999-03-23 Komatsu, Ltd. Apparatus and method for lifting single crystals
WO2001000908A1 (fr) * 1999-06-29 2001-01-04 Acti Optics & Engineering, Inc. Dispositif de chauffe pour four a cristaux croissants
US6758902B2 (en) 1999-06-29 2004-07-06 American Crystal Technologies, Inc. Heater arrangement for crystal growth furnace
US6537372B1 (en) 1999-06-29 2003-03-25 American Crystal Technologies, Inc. Heater arrangement for crystal growth furnace
US20030136335A1 (en) * 1999-06-29 2003-07-24 Schupp John D. Heater arrangement for crystal growth furnace
US6602345B1 (en) 1999-06-29 2003-08-05 American Crystal Technologies, Inc., Heater arrangement for crystal growth furnace
US20060130739A1 (en) * 2001-05-01 2006-06-22 Seiji Sarayama Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US7001457B2 (en) * 2001-05-01 2006-02-21 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US20020175338A1 (en) * 2001-05-01 2002-11-28 Seiji Sarayama Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US7531038B2 (en) 2001-05-01 2009-05-12 Ricoh Company, Ltd. Crystal growth method
US20090120354A1 (en) * 2001-05-01 2009-05-14 Seiji Sarayama Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device
US8623138B2 (en) 2001-05-01 2014-01-07 Ricoh Company, Ltd. Crystal growth apparatus
US11077469B2 (en) * 2016-09-08 2021-08-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for sorting silicon wafers according to their bulk lifetime
CN115044961A (zh) * 2022-06-09 2022-09-13 福建晶翔光电科技有限公司 一种氟化钡光学晶体制备装置及其制备方法
CN115044961B (zh) * 2022-06-09 2024-02-02 福建晶翔光电科技有限公司 一种氟化钡光学晶体制备装置及其制备方法
CN115896922A (zh) * 2023-02-16 2023-04-04 杭州天桴光电技术有限公司 一种大尺寸氟化钙单晶生长与在位退火的装置
CN117867641A (zh) * 2023-12-28 2024-04-12 蒙城繁枫真空科技有限公司 一种晶体生长设备晶杆快速调整垂直度的设计和方法

Also Published As

Publication number Publication date
FR2153247A1 (fr) 1973-05-04
FR2153247B3 (fr) 1976-07-23
GB1392749A (en) 1975-04-30
JPS4839377A (fr) 1973-06-09
DE2240788A1 (de) 1973-03-29

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