JPS4839377A - - Google Patents

Info

Publication number
JPS4839377A
JPS4839377A JP47091002A JP9100272A JPS4839377A JP S4839377 A JPS4839377 A JP S4839377A JP 47091002 A JP47091002 A JP 47091002A JP 9100272 A JP9100272 A JP 9100272A JP S4839377 A JPS4839377 A JP S4839377A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47091002A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4839377A publication Critical patent/JPS4839377A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP47091002A 1971-09-23 1972-09-12 Pending JPS4839377A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US183169A US3865554A (en) 1971-09-23 1971-09-23 Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique

Publications (1)

Publication Number Publication Date
JPS4839377A true JPS4839377A (ja) 1973-06-09

Family

ID=22671728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47091002A Pending JPS4839377A (ja) 1971-09-23 1972-09-12

Country Status (5)

Country Link
US (1) US3865554A (ja)
JP (1) JPS4839377A (ja)
DE (1) DE2240788A1 (ja)
FR (1) FR2153247B3 (ja)
GB (1) GB1392749A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009202149A (ja) * 2008-02-27 2009-09-10 Green Energy Technology Inc 緊急用圧力解放装置を備えた結晶成長炉システム

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2349736A1 (de) * 1973-10-03 1975-04-24 Siemens Ag Ueberwachungseinrichtung fuer eine vorrichtung zum ziehen von kristallen aus der schmelze
US4049384A (en) * 1975-04-14 1977-09-20 Arthur D. Little, Inc. Cold crucible system
US4080172A (en) * 1975-12-29 1978-03-21 Monsanto Company Zone refiner automatic control
DE2759050C3 (de) * 1977-12-30 1982-05-06 Vsesojuznyj naučno-issledovatel'skij institut monokristallov, Charkov Vorrichtung zum Ziehen von Einkristallen aus der Schmelze
US4190630A (en) * 1978-01-03 1980-02-26 Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv Apparatus for pulling single crystals from melt
US4235848A (en) * 1978-06-15 1980-11-25 Apilat Vitaly Y Apparatus for pulling single crystal from melt on a seed
CA1169336A (en) * 1980-01-07 1984-06-19 Emanuel M. Sachs String stabilized ribbon growth method and apparatus
NL8102566A (nl) * 1980-06-14 1982-01-04 Leybold Heraeus Gmbh & Co Kg Inrichting voor het door middel van een opwikkelbaar trekorgaan uit een kroes trekken van een enkel kristal.
DE3116916C2 (de) * 1980-06-14 1984-08-23 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum Ziehen eines Einkristalls aus einem Tiegel mittels eines aufwickelbaren Zugorgans
DE3152850A1 (de) * 1981-05-19 1983-06-30 Ferrofluidics Corp Vorrichtung und verfahren zur handhabung von kristallen aus kristallziehoefen
US4485072A (en) * 1982-02-24 1984-11-27 Apilat Vitaly Y Apparatus and method of growing and discharging single crystals
FR2522694A1 (fr) * 1982-03-05 1983-09-09 Inst Monokristallov Installation pour l'elaboration d'un monocristal par tirage a partir d'un bain de fusion et procede de dechargement dudit monocristal de ladite installation
SU1397555A1 (ru) * 1985-08-09 1988-05-23 Институт физики твердого тела АН СССР Установка дл выращивани монокристаллов тугоплавких окислов из расплава
US4931624A (en) * 1987-07-10 1990-06-05 Mellen Sr Robert H Thermal distortion free viewing of a heated cavity
US5863326A (en) * 1996-07-03 1999-01-26 Cermet, Inc. Pressurized skull crucible for crystal growth using the Czochralski technique
US5900060A (en) * 1996-07-03 1999-05-04 Cermet, Inc. Pressurized skull crucible apparatus for crystal growth and related system and methods
US5885347A (en) * 1997-01-29 1999-03-23 Komatsu, Ltd. Apparatus and method for lifting single crystals
US6602345B1 (en) 1999-06-29 2003-08-05 American Crystal Technologies, Inc., Heater arrangement for crystal growth furnace
US6537372B1 (en) 1999-06-29 2003-03-25 American Crystal Technologies, Inc. Heater arrangement for crystal growth furnace
US7001457B2 (en) * 2001-05-01 2006-02-21 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
FR3055563B1 (fr) * 2016-09-08 2018-09-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de tri de plaquettes en silicium en fonction de leur duree de vie volumique
CN115044961B (zh) * 2022-06-09 2024-02-02 福建晶翔光电科技有限公司 一种氟化钡光学晶体制备装置及其制备方法
CN115896922B (zh) * 2023-02-16 2023-05-16 杭州天桴光电技术有限公司 一种大尺寸氟化钙单晶生长与在位退火的装置
CN117867641B (zh) * 2023-12-28 2024-08-02 蒙城繁枫真空科技有限公司 一种晶体生长设备晶杆快速调整垂直度的设计和方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002320A (en) * 1951-11-16 1961-10-03 Bell Telephone Labor Inc Preparation of silicon material
US3372003A (en) * 1963-07-19 1968-03-05 Shin Nippon Chisso Hiryo Kabus Apparatus and method for producing silicon single crystals for semiconductor
US3353914A (en) * 1964-12-30 1967-11-21 Martin Marietta Corp Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
US3493770A (en) * 1966-03-01 1970-02-03 Ibm Radiation sensitive control system for crystal growing apparatus
DE1544292C3 (de) * 1966-06-13 1976-01-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit über die gesamte Stablänge homogener Antimondotierung
US3552931A (en) * 1967-07-14 1971-01-05 Little Inc A Apparatus for imparting translational and rotational motion
US3650701A (en) * 1970-07-22 1972-03-21 Commissariat Energie Atomique Apparatus for growing crystalline bodies

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009202149A (ja) * 2008-02-27 2009-09-10 Green Energy Technology Inc 緊急用圧力解放装置を備えた結晶成長炉システム

Also Published As

Publication number Publication date
GB1392749A (en) 1975-04-30
US3865554A (en) 1975-02-11
DE2240788A1 (de) 1973-03-29
FR2153247B3 (ja) 1976-07-23
FR2153247A1 (ja) 1973-05-04

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