US3853613A - Method of manufacturing an article and article manufactured by means of the method - Google Patents

Method of manufacturing an article and article manufactured by means of the method Download PDF

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Publication number
US3853613A
US3853613A US00312847A US31284772A US3853613A US 3853613 A US3853613 A US 3853613A US 00312847 A US00312847 A US 00312847A US 31284772 A US31284772 A US 31284772A US 3853613 A US3853613 A US 3853613A
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United States
Prior art keywords
platinum
layer
pattern
reaction product
germanium
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Expired - Lifetime
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US00312847A
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English (en)
Inventor
H Wilting
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US Philips Corp
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US Philips Corp
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Filing date
Publication date
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Publication of US3853613A publication Critical patent/US3853613A/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • ABSTRACT The invention relates to the manufacture of a platinum pattern on a body, for example, for contacting a semiconductor body. First a layer of a material which can react with the platinum is provided on the body, namely in the form of a negative of the platinum pattern. A layer of platinum is then provided. The pattern of material is caused to react with the platinum layer and the reaction product of the material and the platinum is then removed after which the (positive) platinum pattern remains.
  • the invention relates to a method of manufacturing an article in which a platinum layer and a layer of a material which can react with the platinum are provided on a body, parts of the layer of material are removed so as to obtain a pattern of the material complementary to the desired platinum pattern, after which the platinum of the layer is caused to react with the material of the complementary pattern at elevated temperature and the reaction product of the material and the platinum is selectively removed relative to the platinum so as to obtain the platinum pattern, and to an article manufactured by means of the method.
  • reaction to a reaction product is to be understood to meanherein not only the chemical reaction of the platinum with the material to form a chemical compound, but also, for example, the dissolving or alloying of the platinum and the material to form a product which can be selectively removed relative to the platinum.
  • a pattern complementary to the platinum pattern is to be understood to mean herein a pattern which forms a negative relative to the platinum pattern as a positive pattern.
  • the material may often be chosen to be such that the complementary pettern can be obtained in a usual manner, for example, photomechanically.
  • platinum layers not only a platinum layer is provided on the body in addition to the layer of material, but also layers of other metals, for example, chronium, titanium and/or gold, which in themselves can sometimes be etched better than platinum.
  • the invention is inter alia based on the recognition of the fact that the last-mentioned reaction is prevented by providing the material in as early a stage as possible.
  • the method mentioned in the preamble is characterized according to the invention in that first the complementary pattern of the material is provided on the body and then the platinum layer is provided.
  • the material in the complementary pattern is first provided, the material can no longer react as the area of the desired pattern with after metal layers to be provided afterwards.
  • the material must of course be selectively removable relative to the body.
  • the removal of the reac tion product can be carried out by selective etching.
  • reaction product is selectively removed relative to the platinum by means of an ultrasonic method.
  • reaction product often is much more brittle than the original platinum, as a result of which mechanical methods of removing, for example, the ultrasonic method, is selective particularly in the method according to the invention.
  • the material is preferably chosen from at least one element belonging to the group consisting of the elements of the groups IIIB and [VB of the periodic table.
  • the material shosen is germanium.
  • a layer of titanium or chromium is preferably present between the layer of platinum and the body.
  • the invention furthermore relates to an aticle, in particular a semiconductor device, manufactured by means of the method according to the invention.
  • FIGS. 1 to 5 are diagrammatic cross-sectional views of a part of an article in successive stages of manufacture by means of the method according to the invention.
  • a layer 2 of germanium is provided on a silicon body 1 (FIG. 1). Germanium can react with platinum. Parts'of the germanium layer 2 are removed so as to obtain a germanium pattern which is complementary to the desired platinum pattern (FIG. 2). A chromium layer 4 and a platinum layer 5 are then provided on the complementary germanium pattern (FIG. 3) and the platinum is caused to react with the germanium to form a reaction product 6 (FIG.
  • the reaction product 6 of the germanium and the platinum is selectively removed relative to the metal to obtain the platinum pattern (FIG. 5).
  • the germanium layer 2 is provided, for example, by vapour deposition and is approximately 0.1 u thick.
  • the complementary germanium pattern is obtained in a usual manner by means of a photoetching method, in which a photolacquer layer is usedas an etching mask for etching germanium in a bath containing hydrogen peroxide and, possibly, hydrofluoric acid.
  • the layers 4 and 5 are also provided by vapour deposition.
  • the chromium layer is approximately 500 A thick and the platinum layer 5 is approximately 0.15 ,u thick.
  • the temperature of the body 1 during the vapour deposition process is approximately 450C the platinum diffusing through the thin chromium layer 4 and reacting with the underlying germanium.
  • the reaction product of germanium and platinum is removed by dipping the body in aqua regia.
  • the reaction project GePt dissolves in it many times faster than platinum alone.
  • the reaction product may also be removed ultrasonically.
  • the chromium layer 4 serves to obtain a good adherence between the platinum layer 5 and the silicon body I. With the said chromium layer 4, a reaction in the lateral direction is also prevented, as a result of which a good edge sharpness of the platinum pattern is obtained.
  • regions of the silicon body can be contacted on the one hand, and on the other hand the platinum layer may be used for contacting connection conductors.
  • the platinum layer is preferably fortified with gold, for example, electrolytically, and titanium is used as an adhering layer instead of chromium.
  • the contacting of a semiconductor body to obtain a semiconductor device may be carried out by:
  • reaction product may be etched away, but, owing to its brittle character, it may also be removed ultrasonically.
  • the method according to the invention is not re- 1 stricted to the examples described but may be varied in many ways.
  • the method is not restricted to the manufacture of semiconductor devices but in general arti- Instead of germanium, the material used may be, for
  • silicon but also an element from the group 1113 or IVB of the periodic table, for example, aluminum, may be used.
  • a method of providing a platinum pattern on a substrate comprising providing, in a pattern complementary to the desired platinum pattern, a layer of a material reactive with platinum on a substrate providing a layer of platinum on said material and on the exposed portions of the substrate, forming a reaction product of platinum and the material of the complementary pattern and selectively removing the reaction product of the platinum and the material from the body relative to the platinum thereby leaving the desired platinum pattern on the body.
  • reaction product is selectively removed relative to the platinum by means of ultrasonic energy.
  • mate rial is chosen from at least one element belonging to the group consisting of the elements of groups [H8 and W8 of the periodic table.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
US00312847A 1971-12-18 1972-12-07 Method of manufacturing an article and article manufactured by means of the method Expired - Lifetime US3853613A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7117429A NL7117429A (ja) 1971-12-18 1971-12-18

Publications (1)

Publication Number Publication Date
US3853613A true US3853613A (en) 1974-12-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
US00312847A Expired - Lifetime US3853613A (en) 1971-12-18 1972-12-07 Method of manufacturing an article and article manufactured by means of the method

Country Status (8)

Country Link
US (1) US3853613A (ja)
JP (1) JPS5125225B2 (ja)
CA (1) CA964384A (ja)
DE (1) DE2261672A1 (ja)
FR (1) FR2163609A1 (ja)
GB (1) GB1372459A (ja)
IT (1) IT976061B (ja)
NL (1) NL7117429A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442137A (en) * 1982-03-18 1984-04-10 International Business Machines Corporation Maskless coating of metallurgical features of a dielectric substrate

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52153137U (ja) * 1976-05-17 1977-11-19
JPS53157435U (ja) * 1977-05-17 1978-12-09
JPS5950212B2 (ja) * 1978-07-28 1984-12-07 富士電機株式会社 半導体素子の電極の製造方法
JPS5679450A (en) * 1979-11-30 1981-06-30 Mitsubishi Electric Corp Electrode and wiring of semiconductor device
US11011381B2 (en) * 2018-07-27 2021-05-18 Texas Instruments Incorporated Patterning platinum by alloying and etching platinum alloy

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3686080A (en) * 1971-07-21 1972-08-22 Rca Corp Method of fabrication of semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3686080A (en) * 1971-07-21 1972-08-22 Rca Corp Method of fabrication of semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442137A (en) * 1982-03-18 1984-04-10 International Business Machines Corporation Maskless coating of metallurgical features of a dielectric substrate

Also Published As

Publication number Publication date
GB1372459A (en) 1974-10-30
NL7117429A (ja) 1973-06-20
CA964384A (en) 1975-03-11
IT976061B (it) 1974-08-20
JPS4868437A (ja) 1973-09-18
DE2261672A1 (de) 1973-06-20
FR2163609A1 (ja) 1973-07-27
JPS5125225B2 (ja) 1976-07-29

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