US3840391A - Method for the preparation of thin films by ultra-sonically vaporing solutions into an aerosol - Google Patents

Method for the preparation of thin films by ultra-sonically vaporing solutions into an aerosol Download PDF

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Publication number
US3840391A
US3840391A US00190706A US19070671A US3840391A US 3840391 A US3840391 A US 3840391A US 00190706 A US00190706 A US 00190706A US 19070671 A US19070671 A US 19070671A US 3840391 A US3840391 A US 3840391A
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United States
Prior art keywords
aerosol
substrate
ultra
thin films
solution
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Expired - Lifetime
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US00190706A
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English (en)
Inventor
J Spitz
J Viguie
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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Priority to US352086A priority Critical patent/US3880112A/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B17/00Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups
    • B05B17/04Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods
    • B05B17/06Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations
    • B05B17/0607Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers
    • B05B17/0615Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers spray being produced at the free surface of the liquid or other fluent material in a container and subjected to the vibrations
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50

Definitions

  • This invention relates to a method and a device for preparing thin films of metals or metallic compounds by depositing on a heated substrate a mist of solution which forms the material to be deposited, the mist being transported towards the substrate by a carrier gas.
  • the invention also relates to the improved thin films which are obtained by application of the method.
  • the only available parameter for modifying the characteristics of the mist (size of droplets and flow rate of aerosol) in a given apparatus is the flow rate of the carrier gas which is in turn dependent on the pressure of admission of said gas.
  • the chief aim of the invention is to provide a method of preparation of thin films which largely overcomes the disadvantages attached to methods of the prior art.
  • the invention proposes a method whereby the solution employed for forming the material to be deposited is atomized by ultrasonic waves.
  • the size distribution is limited to a very narrow range in the vicinity of the maximum value, thereby ensuring higher quality of films.
  • the corollary to this is that the efficiency is greatly enhanced since practically the entire quantity of formed droplets is entrained by the carrier gas whereas in the case of the compressed-air spraying process, droplets representing a very high proportion (often higher than 80 percent) are too large to permit entrainment by the carrier gas. These droplets are deposited on the walls of the atomization chamber.
  • the aerosol exhibits properties which are extremely close to those of a homogeneous gas, thereby facilitating transport of the aerosol from the formation zone to the deposition zone.
  • the method according to the invention is primarily although not exclusively applicable to the preparation of thin oxide films which may be employed as photomasks in micro-electronics, of thin films of sulphides and garnets as well as thin coatings of metals or metallic compounds (for example aluminum on a metallic or plastic substrate; nickel, chromium, cobalt, platinum, palladium, osmium, iridium on a suitable substrate for forming catalysts; and so forth).
  • metals or metallic compounds for example aluminum on a metallic or plastic substrate; nickel, chromium, cobalt, platinum, palladium, osmium, iridium on a suitable substrate for forming catalysts; and so forth.
  • FIG. 1 shows diagrammatically an installation for the formation of thin films on a fiat substrate of large size, the aerosol generator and the chamber in which the deposition is carried out being shown in cross-section along a vertical plane;
  • FIG. 2 is a curve representing the mean diameter of the droplets as a functionof the frequency of the ultrasonic generator
  • FIG. 3 is a curve representing the coefficient of transmission of a thin film of iron oxide Fe O as obtainedby means of the device of FIG. 1 and having a thickness of 2000 A, as a function of the wavelength of light;
  • FIG. 4 shows an alternative form of construction of the device of FIG. 1 for forming deposits on substrates having small dimensions, the aerosol generator being shown only by way of schematic illustration;
  • FIG. 5 shows another alternative form of construction whichis intended for continuous or semicontinuous operation
  • FIG. 6 shows the curve of variation of temperature along the furnace of FIG. 5 when the loaded gas is admitted (full-line curve) and when no gas is present (dashed-line curve).
  • the device which is illustrated in FIG. 1 can be considered as being made up of an aerosol generator A, a deposition chamber Band ancillary elements. Said device is intended to form thin films on glass plates 10 having substantial dimensions (e.g. square plates 50 X 50 mm in size). v
  • the aerosol generator A has a general structure which is known per se and a complete description of said generator can be found in the article by .I. Spitz and J. Unyentitled Ultrasonic spraying applied to atomic absorption spectrometry and published in the July, 1968 issue of Applied Optics, pages l345 to 1349.
  • This generator comprises an ultrasonic-wave emitter 12 which is placed on the underside of'an annular tank 14 containing an ultransonic-wave transmitting liquid.
  • a diaphram l6 closes-off a spray atomization chamber 18.
  • the chamber 18 is constituted by a cylindrical tube provided at the top with a conical end portion in which is inserted a head 20.
  • the head carries a duct 22 through which the aerosols are discharged.
  • the carrier gas which may consist, for example, ofargon or of another inert or oxidizing gas in the case of oxide deposition is introduced into the chamber 18 through a vertical tube 24 which is placed in the axis of the tube and passes through a stopper 26 which is inserted in the head 20.
  • the chamber 18 is fitted with a device (not shown) for the automatic supply of solution of material to be deposited.
  • the piezoelectric generator 12 is advantageously of a type which provides for power variation between'O and 100 W, for example.
  • a frequency of the order of l megacycle is usually suitable and makes it possible to obtain a mean particle size of a few microns.
  • Tests carried out with a generator of the type illustrated in FIG. 1 and using various frequencies have shown that the droplets obtained had a mean diameter which was a decreasing function of the frequency, as shown in FIG. 2. Moreover, these tests have demonstrated the fact that the size spectrum always remains much narrower than in the case of the compressed-air spraying technique.
  • the very uniform aerosol which is delivered by the device A can be transported by a gas flow at a very low rate and at a pressure in the vicinity of atmospheric, with the result that the air stream which is directed towards the substrate has a low rate of flow and accordingly cools this latter to a lesser extent.
  • the deposition chamber which is illustrated in FIG. 1 comprises a bell-housing 42 which rests on a base 44. Said base is fitted with a plate 46 which carries the substrate l and is heated by a resistor 48. A motor which is not illustrated serves to displace the substrate over the plate at a low and uniform speed in order to increase the homogeneity of the film.
  • a bell-housing having a diameter of 200 mm and a height of mm has made it possible to treat glass plates measurng-50 X 50 mm.
  • the bell-housing is provided at the top with a necked portion 50 which is closed by a head 52 and this latter delimits a chamber 54 into which opens the duct 22.
  • the aerosol is distributed above the plate 10 by means of a hollow rod 56 fitted with a nozzle 58 for distribution towards a number of zones of the substrate.
  • the aerosol penetrates into the rod through openings 59.
  • the rod 56 is driven in rotation in order to deliver the aerosol successively over a number of different portions of the substrate 10 and in order to prevent abrupt and general cooling of this latter.
  • the temperature of the substrate which was initially of the order of 490C cannot be caused to vary to a greater extent than a few tens of degrees, this result being achieved by virtue of the rotary motion of the rod.
  • the low flow rate of carrier gas which is permitted by the uniformity of the'aerosol makes it possible to operate at higher temperatures than in devices of the prior art which make use of the compressed-air atomization technique.
  • ferric oxide which can be employed as photo-masks.
  • the majority of photo-masks which were employed in the fabrication of integrated electronic circuits were made of chromium.
  • chromium masks are opaque to visible light, with the result that relative positioning of the different masks is a difficult operation.
  • the ferric oxide films which are obtained by application of the method according to the invention are transparent in the visible region of the spectrum so that it is possible to position them accurately and to reduce manufacturing rejects.
  • the device which is illustrated in FIG. 4 constitutes an alternative embodiment of the invention which is intended for the formation of garnets in a thin film on substrates having smaller dimensions than in the previous example, the substrates being made up of quartz plates measuring X 15 mm at a temperature which is higher than in the previous example and which can attain 800C.
  • the aerosol generator A is connected by a short length of piping to the chamber B.
  • Said chamber is constituted by a tube which is provided at the lower end with an additional argon inlet 38' and in which is placed a nozzle 58' for directing the aerosol onto the substrate 10.
  • the top portion of the tube 42 is placed within a sleeve 62, said sleeve being in turn placed within an electric resistance-type tubular furnace 64. Growth of the film is indicated by a recorder 70 which is connected to a photoresistive cell 66, said cell being placed in an end-piece 68 which closes the sleeve and being illuminated by a light source 67.
  • the temperature of the substrate 10 is measured by a thermocouple (not shown) which controls a regulating device for maintaining the substrate at a suitable temperature.
  • vaporization . is carried out slowly as the carrier gas loaded with droplets progresses within the nozzle 58.
  • the device which is illustrated in FIG. 5 differs from the preceding in that it is designed for either continuous or semi-continuous operation.
  • the aerosol generator A" is very similar to the generator shown in FIG. 1 but the vertical tube 24" extends into a bubbling flask 72 which also contains the addition solution. The gas is saturated with solvent in said flask and passes out of this latter through apertures 74, then entrains the mist which was formed in the chamber 18" towards a discharge pipe 22".
  • the deposition chamber B" has a generally flat shape and is provided with two slits in its opposite faces.
  • An endless strip 76 which is driven and guided by two pulleys 78 as shown very diagrammatically in FIG. 5 passes into the chamber and out of this latter through said slits.
  • Recesses 78 one of which is shown on a large scale on the top left-hand side of FIG. 5, are formed in the strip 76. Each recess is intended to receive a substrate 10" on which a thin film is to be deposited.
  • Two sets of resistors constituting a furnace 64" are placed within the deposition chamber on each side of the path of the endless strip 76.
  • the temperature distribution within said furnace advantageously comprises two lateral portions which permit rapid variation and are as small in length as possible and a central portion having a substantially constant temperature.
  • the nozzle 58" could be flat and perpendicular to the direction of displacement of the endless strip 76 but it is usually an advantage to ensure that said nozzle has a generally cylindrical shape and is driven in a reciprocating movement of translation at right angles to the direction of displacement of the strip.
  • the nozzle is carried by the plunger 80 and this latter is slidably mounted within a cylinder 82 which is carried by an extension of the chamber B".
  • the plunger is coupled to a motor (not shown) and endowed by this latter with the necessary reciprocating motion.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Special Spraying Apparatus (AREA)
  • Chemically Coating (AREA)
  • Nozzles (AREA)
  • Chemical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
US00190706A 1970-10-23 1971-10-20 Method for the preparation of thin films by ultra-sonically vaporing solutions into an aerosol Expired - Lifetime US3840391A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US352086A US3880112A (en) 1971-10-20 1973-04-17 Device for the preparation of thin films

Applications Claiming Priority (1)

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FR7038371A FR2110622A5 (enrdf_load_stackoverflow) 1970-10-23 1970-10-23

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US (1) US3840391A (enrdf_load_stackoverflow)
JP (1) JPS5515545B1 (enrdf_load_stackoverflow)
CA (1) CA952770A (enrdf_load_stackoverflow)
CH (1) CH546830A (enrdf_load_stackoverflow)
DE (1) DE2151809C3 (enrdf_load_stackoverflow)
FR (1) FR2110622A5 (enrdf_load_stackoverflow)
GB (1) GB1362803A (enrdf_load_stackoverflow)
IT (1) IT942738B (enrdf_load_stackoverflow)
NL (1) NL178173C (enrdf_load_stackoverflow)

Cited By (38)

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US4167045A (en) * 1977-08-26 1979-09-11 Interface Biomedical Laboratories Corp. Cardiac and vascular prostheses
US4290384A (en) * 1979-10-18 1981-09-22 The Perkin-Elmer Corporation Coating apparatus
US4309456A (en) * 1980-09-23 1982-01-05 Rca Corporation Method and apparatus for coating recorded discs with a lubricant
US4431684A (en) * 1981-06-02 1984-02-14 E. I. Du Pont De Nemours & Co. Ultrasonic vibrator for applying finish to yarn
US4526808A (en) * 1979-07-05 1985-07-02 E. I. Du Pont De Nemours And Company Method for applying liquid to a yarn
WO1985003460A1 (en) * 1984-02-13 1985-08-15 Schmitt Jerome J Iii Method and apparatus for the gas jet deposition of conducting and dielectric thin solid films and products produced thereby
WO1986002744A1 (en) * 1984-10-29 1986-05-09 American Telephone & Telegraph Company Method of producing devices using nonplanar lithography
US4689247A (en) * 1986-05-15 1987-08-25 Ametek, Inc. Process and apparatus for forming thin films
US4922117A (en) * 1987-06-12 1990-05-01 Canon Kabushiki Kaisha Photoelectric conversion device having a constant potential wiring at the sides of the common wiring
US4950499A (en) * 1987-01-27 1990-08-21 The Foxboro Company Method of making a compliant fluid-impermeable element
US4982079A (en) * 1987-06-12 1991-01-01 Canon Kabushiki Kaisha Photo-sensor having plural transparent layers and a conductive layer to reduce electrostaslic charges
US5002928A (en) * 1987-06-04 1991-03-26 Toa Nenryo Kogyo Kabushiki Kaisha Method for forming oxide superconducting films with an ultrasonic wave sprayer
US5034372A (en) * 1987-12-07 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Plasma based method for production of superconductive oxide layers
WO1995007765A1 (en) * 1993-09-15 1995-03-23 Mobium Enterprises, Inc. Hybrid pulsed valve for thin film coating and method
US5534314A (en) * 1994-08-31 1996-07-09 University Of Virginia Patent Foundation Directed vapor deposition of electron beam evaporant
WO1996031291A1 (en) * 1995-04-03 1996-10-10 Mobium Enterprises Corporation Method of coating a thin film on a substrate
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
US5755885A (en) * 1989-09-19 1998-05-26 Canon Kabushiki Kaisha Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation
US5894403A (en) * 1997-05-01 1999-04-13 Wilson Greatbatch Ltd. Ultrasonically coated substrate for use in a capacitor
US6012647A (en) * 1997-12-01 2000-01-11 3M Innovative Properties Company Apparatus and method of atomizing and vaporizing
US6027673A (en) * 1995-11-21 2000-02-22 The Aerospace Corporation Method of making indium oxide microspheres for antistatic coatings
US6045864A (en) * 1997-12-01 2000-04-04 3M Innovative Properties Company Vapor coating method
US6106890A (en) * 1995-12-27 2000-08-22 Vacuum Metallurgical Co., Ltd. Method for forming a thin film of ultra-fine particles and an apparatus for the same
US20010024700A1 (en) * 1997-05-01 2001-09-27 Asbish Shah Ruthenium-containing ultrasonically coated substrate for use in a capacitor and method of manufacture
US20010026850A1 (en) * 1997-05-01 2001-10-04 Ashish Shah Method for providing a coated substrate for use in a capacitor by a one step ultrasonic deposition process
US6468605B2 (en) * 1997-05-01 2002-10-22 Wilson Greatbatch Ltd. Method for providing a one step ultrasonically coated substrate
US20030068509A1 (en) * 1997-05-01 2003-04-10 Ashish Shah Ruthenium-containing oxide ultrasonically coated substrate for use in a capacitor and method of manufacture
US20030070920A1 (en) * 1997-05-01 2003-04-17 Ashish Shah Electrode for use in a capacitor
US20050016327A1 (en) * 1998-08-26 2005-01-27 Brewster James H. Aerosol method and apparatus for making particulate products
US20080057415A1 (en) * 2004-12-13 2008-03-06 Asml Holding N.V. Method of manufacturing an ultrathin optical element
US20080102019A1 (en) * 2006-03-28 2008-05-01 Korea Instiute Of Energy Research Method and apparatus for synthesizing carbon nanotubes using ultrasonic evaporation
WO2008108672A3 (en) * 2007-03-05 2008-11-06 Inst Optyki Stosowanej An ultrasonic nebulizer
US20090288601A1 (en) * 2000-10-17 2009-11-26 Nanogram Corporation Coating formation by reactive deposition
US8287938B1 (en) * 2008-05-20 2012-10-16 Ingo Scheer Method to produce a coating and to fine-tune the coating morphology
US20150053786A1 (en) * 2013-08-21 2015-02-26 Trimble Navigation Limited Intelligent precision irrigation system
EP3235574A1 (de) * 2016-04-19 2017-10-25 Camag AG Derivatisierungsgerät und -verfahren
CN111945134A (zh) * 2019-05-15 2020-11-17 丰田自动车株式会社 雾发生装置及成膜装置
US20220111412A1 (en) * 2020-01-17 2022-04-14 Toshiba Mitsubishi-Electric Industrial Systems Corporation Ultrasonic atomization apparatus

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NL7700808A (nl) * 1977-01-27 1978-07-31 Philips Nv Werkwijze voor de vervaardiging van ijzer- oxidefotomaskers en ijzeroxidemaskers verkre- gen volgens deze werkwijze.
FR2531880A1 (fr) * 1982-08-18 1984-02-24 Commissariat Energie Atomique Procede de fabrication de couches minces
FR2669246A1 (fr) * 1990-11-16 1992-05-22 Centre Nat Rech Scient Procede sol-gel de depot de couches minces par pulverisation ultrasonore.
DE4138722C2 (de) * 1991-11-21 1994-05-26 Dresden Ev Inst Festkoerper Verfahren zum Verdampfen eines Stoffes für einen sich anschließenden Verarbeitungsprozeß
GB9412676D0 (en) * 1994-06-23 1994-08-10 Jem Smoke Machine Co Improvements in or relating to a method of creating an effect
FR2758744B1 (fr) 1997-01-30 1999-02-19 Commissariat Energie Atomique Systeme d'alimentation en liquide pour appareil dans lequel est maintenu un niveau constant
AT409462B (de) * 1998-10-08 2002-08-26 Thallner Erich Vorrichtung zum belacken von substraten
US6174651B1 (en) 1999-01-14 2001-01-16 Steag Rtp Systems, Inc. Method for depositing atomized materials onto a substrate utilizing light exposure for heating
US6569249B1 (en) 2000-04-18 2003-05-27 Clemson University Process for forming layers on substrates
FI20095651A0 (fi) * 2009-06-10 2009-06-10 Beneq Oy Menetelmä ja laitteisto lasisubstraatin pinnoittamiseksi
DE102010055042B4 (de) 2010-12-17 2013-06-06 Eads Deutschland Gmbh Verfahren und Vorrichtung zur Bildung eines Elektrolytfilmes auf einer Elektrodenoberfläche

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US2512743A (en) * 1946-04-01 1950-06-27 Rca Corp Jet sprayer actuated by supersonic waves
FR1450684A (fr) * 1965-07-07 1966-06-24 Commissariat Energie Atomique Procédé et dispositif de génération d'aérosols à partir d'un liquide

Cited By (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167045A (en) * 1977-08-26 1979-09-11 Interface Biomedical Laboratories Corp. Cardiac and vascular prostheses
US4526808A (en) * 1979-07-05 1985-07-02 E. I. Du Pont De Nemours And Company Method for applying liquid to a yarn
US4290384A (en) * 1979-10-18 1981-09-22 The Perkin-Elmer Corporation Coating apparatus
US4309456A (en) * 1980-09-23 1982-01-05 Rca Corporation Method and apparatus for coating recorded discs with a lubricant
US4431684A (en) * 1981-06-02 1984-02-14 E. I. Du Pont De Nemours & Co. Ultrasonic vibrator for applying finish to yarn
WO1985003460A1 (en) * 1984-02-13 1985-08-15 Schmitt Jerome J Iii Method and apparatus for the gas jet deposition of conducting and dielectric thin solid films and products produced thereby
US4788082A (en) * 1984-02-13 1988-11-29 Schmitt Jerome J Method and apparatus for the deposition of solid films of a material from a jet stream entraining the gaseous phase of said material
WO1986002744A1 (en) * 1984-10-29 1986-05-09 American Telephone & Telegraph Company Method of producing devices using nonplanar lithography
US4689247A (en) * 1986-05-15 1987-08-25 Ametek, Inc. Process and apparatus for forming thin films
US4950499A (en) * 1987-01-27 1990-08-21 The Foxboro Company Method of making a compliant fluid-impermeable element
US5002928A (en) * 1987-06-04 1991-03-26 Toa Nenryo Kogyo Kabushiki Kaisha Method for forming oxide superconducting films with an ultrasonic wave sprayer
US5160835A (en) * 1987-06-12 1992-11-03 Canon Kabushiki Kaisha Photosensor having conductive shielding layer for electrostatic charge dissipation
US4982079A (en) * 1987-06-12 1991-01-01 Canon Kabushiki Kaisha Photo-sensor having plural transparent layers and a conductive layer to reduce electrostaslic charges
US4939592A (en) * 1987-06-12 1990-07-03 Canon Kabushiki Kaisha Contact photoelectric conversion device
EP0294834A3 (en) * 1987-06-12 1991-11-13 Canon Kabushiki Kaisha Photo sensor and its manufacturing method and an image reading apparatus having this photo sensor
US4922117A (en) * 1987-06-12 1990-05-01 Canon Kabushiki Kaisha Photoelectric conversion device having a constant potential wiring at the sides of the common wiring
US5034372A (en) * 1987-12-07 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Plasma based method for production of superconductive oxide layers
US5755885A (en) * 1989-09-19 1998-05-26 Canon Kabushiki Kaisha Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation
US5736195A (en) * 1993-09-15 1998-04-07 Mobium Enterprises Corporation Method of coating a thin film on a substrate
US5403617A (en) * 1993-09-15 1995-04-04 Mobium Enterprises Corporation Hybrid pulsed valve for thin film coating and method
WO1995007765A1 (en) * 1993-09-15 1995-03-23 Mobium Enterprises, Inc. Hybrid pulsed valve for thin film coating and method
US5534314A (en) * 1994-08-31 1996-07-09 University Of Virginia Patent Foundation Directed vapor deposition of electron beam evaporant
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
WO1996031291A1 (en) * 1995-04-03 1996-10-10 Mobium Enterprises Corporation Method of coating a thin film on a substrate
US6027673A (en) * 1995-11-21 2000-02-22 The Aerospace Corporation Method of making indium oxide microspheres for antistatic coatings
US6106890A (en) * 1995-12-27 2000-08-22 Vacuum Metallurgical Co., Ltd. Method for forming a thin film of ultra-fine particles and an apparatus for the same
US6235118B1 (en) 1995-12-27 2001-05-22 Vacuum Metallurgical Co., Ltd. Method for forming a thin film of ultra-fine particles, and an apparatus for the same
US6468605B2 (en) * 1997-05-01 2002-10-22 Wilson Greatbatch Ltd. Method for providing a one step ultrasonically coated substrate
US20030070920A1 (en) * 1997-05-01 2003-04-17 Ashish Shah Electrode for use in a capacitor
US5894403A (en) * 1997-05-01 1999-04-13 Wilson Greatbatch Ltd. Ultrasonically coated substrate for use in a capacitor
US20030068509A1 (en) * 1997-05-01 2003-04-10 Ashish Shah Ruthenium-containing oxide ultrasonically coated substrate for use in a capacitor and method of manufacture
AU735872B2 (en) * 1997-05-01 2001-07-19 Wilson Greatbatch Ltd. Ultrasonically coated substrate for use in a capacitor and method of manufacture
US20010024700A1 (en) * 1997-05-01 2001-09-27 Asbish Shah Ruthenium-containing ultrasonically coated substrate for use in a capacitor and method of manufacture
US20010026850A1 (en) * 1997-05-01 2001-10-04 Ashish Shah Method for providing a coated substrate for use in a capacitor by a one step ultrasonic deposition process
US6012647A (en) * 1997-12-01 2000-01-11 3M Innovative Properties Company Apparatus and method of atomizing and vaporizing
US6045864A (en) * 1997-12-01 2000-04-04 3M Innovative Properties Company Vapor coating method
US6245150B1 (en) 1997-12-01 2001-06-12 3M Innovative Properties Company Vapor coating apparatus
US20050016327A1 (en) * 1998-08-26 2005-01-27 Brewster James H. Aerosol method and apparatus for making particulate products
US7214255B2 (en) * 1998-08-26 2007-05-08 Cabot Corporation Aerosol method and apparatus for making particulate products
US9163308B2 (en) * 2000-10-17 2015-10-20 Nanogram Corporation Apparatus for coating formation by light reactive deposition
US20090288601A1 (en) * 2000-10-17 2009-11-26 Nanogram Corporation Coating formation by reactive deposition
US20080057415A1 (en) * 2004-12-13 2008-03-06 Asml Holding N.V. Method of manufacturing an ultrathin optical element
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IT942738B (it) 1973-04-02
CA952770A (en) 1974-08-13
NL7114556A (enrdf_load_stackoverflow) 1972-04-25
JPS5515545B1 (enrdf_load_stackoverflow) 1980-04-24
DE2151809A1 (de) 1972-04-27
FR2110622A5 (enrdf_load_stackoverflow) 1972-06-02
DE2151809C3 (de) 1974-11-14
NL178173B (nl) 1985-09-02
CH546830A (fr) 1974-03-15
NL178173C (nl) 1989-10-16
DE2151809B2 (de) 1974-03-28
GB1362803A (en) 1974-08-07

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