US3840391A - Method for the preparation of thin films by ultra-sonically vaporing solutions into an aerosol - Google Patents
Method for the preparation of thin films by ultra-sonically vaporing solutions into an aerosol Download PDFInfo
- Publication number
- US3840391A US3840391A US00190706A US19070671A US3840391A US 3840391 A US3840391 A US 3840391A US 00190706 A US00190706 A US 00190706A US 19070671 A US19070671 A US 19070671A US 3840391 A US3840391 A US 3840391A
- Authority
- US
- United States
- Prior art keywords
- aerosol
- substrate
- ultra
- thin films
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000443 aerosol Substances 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims description 22
- 239000010409 thin film Substances 0.000 title abstract description 17
- 238000002360 preparation method Methods 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000012159 carrier gas Substances 0.000 claims abstract description 16
- 238000000889 atomisation Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 230000001276 controlling effect Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000003595 mist Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B17/00—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups
- B05B17/04—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods
- B05B17/06—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations
- B05B17/0607—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers
- B05B17/0615—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers spray being produced at the free surface of the liquid or other fluent material in a container and subjected to the vibrations
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
Definitions
- This invention relates to a method and a device for preparing thin films of metals or metallic compounds by depositing on a heated substrate a mist of solution which forms the material to be deposited, the mist being transported towards the substrate by a carrier gas.
- the invention also relates to the improved thin films which are obtained by application of the method.
- the only available parameter for modifying the characteristics of the mist (size of droplets and flow rate of aerosol) in a given apparatus is the flow rate of the carrier gas which is in turn dependent on the pressure of admission of said gas.
- the chief aim of the invention is to provide a method of preparation of thin films which largely overcomes the disadvantages attached to methods of the prior art.
- the invention proposes a method whereby the solution employed for forming the material to be deposited is atomized by ultrasonic waves.
- the size distribution is limited to a very narrow range in the vicinity of the maximum value, thereby ensuring higher quality of films.
- the corollary to this is that the efficiency is greatly enhanced since practically the entire quantity of formed droplets is entrained by the carrier gas whereas in the case of the compressed-air spraying process, droplets representing a very high proportion (often higher than 80 percent) are too large to permit entrainment by the carrier gas. These droplets are deposited on the walls of the atomization chamber.
- the aerosol exhibits properties which are extremely close to those of a homogeneous gas, thereby facilitating transport of the aerosol from the formation zone to the deposition zone.
- the method according to the invention is primarily although not exclusively applicable to the preparation of thin oxide films which may be employed as photomasks in micro-electronics, of thin films of sulphides and garnets as well as thin coatings of metals or metallic compounds (for example aluminum on a metallic or plastic substrate; nickel, chromium, cobalt, platinum, palladium, osmium, iridium on a suitable substrate for forming catalysts; and so forth).
- metals or metallic compounds for example aluminum on a metallic or plastic substrate; nickel, chromium, cobalt, platinum, palladium, osmium, iridium on a suitable substrate for forming catalysts; and so forth.
- FIG. 1 shows diagrammatically an installation for the formation of thin films on a fiat substrate of large size, the aerosol generator and the chamber in which the deposition is carried out being shown in cross-section along a vertical plane;
- FIG. 2 is a curve representing the mean diameter of the droplets as a functionof the frequency of the ultrasonic generator
- FIG. 3 is a curve representing the coefficient of transmission of a thin film of iron oxide Fe O as obtainedby means of the device of FIG. 1 and having a thickness of 2000 A, as a function of the wavelength of light;
- FIG. 4 shows an alternative form of construction of the device of FIG. 1 for forming deposits on substrates having small dimensions, the aerosol generator being shown only by way of schematic illustration;
- FIG. 5 shows another alternative form of construction whichis intended for continuous or semicontinuous operation
- FIG. 6 shows the curve of variation of temperature along the furnace of FIG. 5 when the loaded gas is admitted (full-line curve) and when no gas is present (dashed-line curve).
- the device which is illustrated in FIG. 1 can be considered as being made up of an aerosol generator A, a deposition chamber Band ancillary elements. Said device is intended to form thin films on glass plates 10 having substantial dimensions (e.g. square plates 50 X 50 mm in size). v
- the aerosol generator A has a general structure which is known per se and a complete description of said generator can be found in the article by .I. Spitz and J. Unyentitled Ultrasonic spraying applied to atomic absorption spectrometry and published in the July, 1968 issue of Applied Optics, pages l345 to 1349.
- This generator comprises an ultrasonic-wave emitter 12 which is placed on the underside of'an annular tank 14 containing an ultransonic-wave transmitting liquid.
- a diaphram l6 closes-off a spray atomization chamber 18.
- the chamber 18 is constituted by a cylindrical tube provided at the top with a conical end portion in which is inserted a head 20.
- the head carries a duct 22 through which the aerosols are discharged.
- the carrier gas which may consist, for example, ofargon or of another inert or oxidizing gas in the case of oxide deposition is introduced into the chamber 18 through a vertical tube 24 which is placed in the axis of the tube and passes through a stopper 26 which is inserted in the head 20.
- the chamber 18 is fitted with a device (not shown) for the automatic supply of solution of material to be deposited.
- the piezoelectric generator 12 is advantageously of a type which provides for power variation between'O and 100 W, for example.
- a frequency of the order of l megacycle is usually suitable and makes it possible to obtain a mean particle size of a few microns.
- Tests carried out with a generator of the type illustrated in FIG. 1 and using various frequencies have shown that the droplets obtained had a mean diameter which was a decreasing function of the frequency, as shown in FIG. 2. Moreover, these tests have demonstrated the fact that the size spectrum always remains much narrower than in the case of the compressed-air spraying technique.
- the very uniform aerosol which is delivered by the device A can be transported by a gas flow at a very low rate and at a pressure in the vicinity of atmospheric, with the result that the air stream which is directed towards the substrate has a low rate of flow and accordingly cools this latter to a lesser extent.
- the deposition chamber which is illustrated in FIG. 1 comprises a bell-housing 42 which rests on a base 44. Said base is fitted with a plate 46 which carries the substrate l and is heated by a resistor 48. A motor which is not illustrated serves to displace the substrate over the plate at a low and uniform speed in order to increase the homogeneity of the film.
- a bell-housing having a diameter of 200 mm and a height of mm has made it possible to treat glass plates measurng-50 X 50 mm.
- the bell-housing is provided at the top with a necked portion 50 which is closed by a head 52 and this latter delimits a chamber 54 into which opens the duct 22.
- the aerosol is distributed above the plate 10 by means of a hollow rod 56 fitted with a nozzle 58 for distribution towards a number of zones of the substrate.
- the aerosol penetrates into the rod through openings 59.
- the rod 56 is driven in rotation in order to deliver the aerosol successively over a number of different portions of the substrate 10 and in order to prevent abrupt and general cooling of this latter.
- the temperature of the substrate which was initially of the order of 490C cannot be caused to vary to a greater extent than a few tens of degrees, this result being achieved by virtue of the rotary motion of the rod.
- the low flow rate of carrier gas which is permitted by the uniformity of the'aerosol makes it possible to operate at higher temperatures than in devices of the prior art which make use of the compressed-air atomization technique.
- ferric oxide which can be employed as photo-masks.
- the majority of photo-masks which were employed in the fabrication of integrated electronic circuits were made of chromium.
- chromium masks are opaque to visible light, with the result that relative positioning of the different masks is a difficult operation.
- the ferric oxide films which are obtained by application of the method according to the invention are transparent in the visible region of the spectrum so that it is possible to position them accurately and to reduce manufacturing rejects.
- the device which is illustrated in FIG. 4 constitutes an alternative embodiment of the invention which is intended for the formation of garnets in a thin film on substrates having smaller dimensions than in the previous example, the substrates being made up of quartz plates measuring X 15 mm at a temperature which is higher than in the previous example and which can attain 800C.
- the aerosol generator A is connected by a short length of piping to the chamber B.
- Said chamber is constituted by a tube which is provided at the lower end with an additional argon inlet 38' and in which is placed a nozzle 58' for directing the aerosol onto the substrate 10.
- the top portion of the tube 42 is placed within a sleeve 62, said sleeve being in turn placed within an electric resistance-type tubular furnace 64. Growth of the film is indicated by a recorder 70 which is connected to a photoresistive cell 66, said cell being placed in an end-piece 68 which closes the sleeve and being illuminated by a light source 67.
- the temperature of the substrate 10 is measured by a thermocouple (not shown) which controls a regulating device for maintaining the substrate at a suitable temperature.
- vaporization . is carried out slowly as the carrier gas loaded with droplets progresses within the nozzle 58.
- the device which is illustrated in FIG. 5 differs from the preceding in that it is designed for either continuous or semi-continuous operation.
- the aerosol generator A" is very similar to the generator shown in FIG. 1 but the vertical tube 24" extends into a bubbling flask 72 which also contains the addition solution. The gas is saturated with solvent in said flask and passes out of this latter through apertures 74, then entrains the mist which was formed in the chamber 18" towards a discharge pipe 22".
- the deposition chamber B" has a generally flat shape and is provided with two slits in its opposite faces.
- An endless strip 76 which is driven and guided by two pulleys 78 as shown very diagrammatically in FIG. 5 passes into the chamber and out of this latter through said slits.
- Recesses 78 one of which is shown on a large scale on the top left-hand side of FIG. 5, are formed in the strip 76. Each recess is intended to receive a substrate 10" on which a thin film is to be deposited.
- Two sets of resistors constituting a furnace 64" are placed within the deposition chamber on each side of the path of the endless strip 76.
- the temperature distribution within said furnace advantageously comprises two lateral portions which permit rapid variation and are as small in length as possible and a central portion having a substantially constant temperature.
- the nozzle 58" could be flat and perpendicular to the direction of displacement of the endless strip 76 but it is usually an advantage to ensure that said nozzle has a generally cylindrical shape and is driven in a reciprocating movement of translation at right angles to the direction of displacement of the strip.
- the nozzle is carried by the plunger 80 and this latter is slidably mounted within a cylinder 82 which is carried by an extension of the chamber B".
- the plunger is coupled to a motor (not shown) and endowed by this latter with the necessary reciprocating motion.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Special Spraying Apparatus (AREA)
- Chemically Coating (AREA)
- Nozzles (AREA)
- Chemical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US352086A US3880112A (en) | 1971-10-20 | 1973-04-17 | Device for the preparation of thin films |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7038371A FR2110622A5 (enrdf_load_stackoverflow) | 1970-10-23 | 1970-10-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3840391A true US3840391A (en) | 1974-10-08 |
Family
ID=9063211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US00190706A Expired - Lifetime US3840391A (en) | 1970-10-23 | 1971-10-20 | Method for the preparation of thin films by ultra-sonically vaporing solutions into an aerosol |
Country Status (9)
Country | Link |
---|---|
US (1) | US3840391A (enrdf_load_stackoverflow) |
JP (1) | JPS5515545B1 (enrdf_load_stackoverflow) |
CA (1) | CA952770A (enrdf_load_stackoverflow) |
CH (1) | CH546830A (enrdf_load_stackoverflow) |
DE (1) | DE2151809C3 (enrdf_load_stackoverflow) |
FR (1) | FR2110622A5 (enrdf_load_stackoverflow) |
GB (1) | GB1362803A (enrdf_load_stackoverflow) |
IT (1) | IT942738B (enrdf_load_stackoverflow) |
NL (1) | NL178173C (enrdf_load_stackoverflow) |
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4167045A (en) * | 1977-08-26 | 1979-09-11 | Interface Biomedical Laboratories Corp. | Cardiac and vascular prostheses |
US4290384A (en) * | 1979-10-18 | 1981-09-22 | The Perkin-Elmer Corporation | Coating apparatus |
US4309456A (en) * | 1980-09-23 | 1982-01-05 | Rca Corporation | Method and apparatus for coating recorded discs with a lubricant |
US4431684A (en) * | 1981-06-02 | 1984-02-14 | E. I. Du Pont De Nemours & Co. | Ultrasonic vibrator for applying finish to yarn |
US4526808A (en) * | 1979-07-05 | 1985-07-02 | E. I. Du Pont De Nemours And Company | Method for applying liquid to a yarn |
WO1985003460A1 (en) * | 1984-02-13 | 1985-08-15 | Schmitt Jerome J Iii | Method and apparatus for the gas jet deposition of conducting and dielectric thin solid films and products produced thereby |
WO1986002744A1 (en) * | 1984-10-29 | 1986-05-09 | American Telephone & Telegraph Company | Method of producing devices using nonplanar lithography |
US4689247A (en) * | 1986-05-15 | 1987-08-25 | Ametek, Inc. | Process and apparatus for forming thin films |
US4922117A (en) * | 1987-06-12 | 1990-05-01 | Canon Kabushiki Kaisha | Photoelectric conversion device having a constant potential wiring at the sides of the common wiring |
US4950499A (en) * | 1987-01-27 | 1990-08-21 | The Foxboro Company | Method of making a compliant fluid-impermeable element |
US4982079A (en) * | 1987-06-12 | 1991-01-01 | Canon Kabushiki Kaisha | Photo-sensor having plural transparent layers and a conductive layer to reduce electrostaslic charges |
US5002928A (en) * | 1987-06-04 | 1991-03-26 | Toa Nenryo Kogyo Kabushiki Kaisha | Method for forming oxide superconducting films with an ultrasonic wave sprayer |
US5034372A (en) * | 1987-12-07 | 1991-07-23 | Mitsubishi Denki Kabushiki Kaisha | Plasma based method for production of superconductive oxide layers |
WO1995007765A1 (en) * | 1993-09-15 | 1995-03-23 | Mobium Enterprises, Inc. | Hybrid pulsed valve for thin film coating and method |
US5534314A (en) * | 1994-08-31 | 1996-07-09 | University Of Virginia Patent Foundation | Directed vapor deposition of electron beam evaporant |
WO1996031291A1 (en) * | 1995-04-03 | 1996-10-10 | Mobium Enterprises Corporation | Method of coating a thin film on a substrate |
US5571332A (en) * | 1995-02-10 | 1996-11-05 | Jet Process Corporation | Electron jet vapor deposition system |
US5755885A (en) * | 1989-09-19 | 1998-05-26 | Canon Kabushiki Kaisha | Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation |
US5894403A (en) * | 1997-05-01 | 1999-04-13 | Wilson Greatbatch Ltd. | Ultrasonically coated substrate for use in a capacitor |
US6012647A (en) * | 1997-12-01 | 2000-01-11 | 3M Innovative Properties Company | Apparatus and method of atomizing and vaporizing |
US6027673A (en) * | 1995-11-21 | 2000-02-22 | The Aerospace Corporation | Method of making indium oxide microspheres for antistatic coatings |
US6045864A (en) * | 1997-12-01 | 2000-04-04 | 3M Innovative Properties Company | Vapor coating method |
US6106890A (en) * | 1995-12-27 | 2000-08-22 | Vacuum Metallurgical Co., Ltd. | Method for forming a thin film of ultra-fine particles and an apparatus for the same |
US20010024700A1 (en) * | 1997-05-01 | 2001-09-27 | Asbish Shah | Ruthenium-containing ultrasonically coated substrate for use in a capacitor and method of manufacture |
US20010026850A1 (en) * | 1997-05-01 | 2001-10-04 | Ashish Shah | Method for providing a coated substrate for use in a capacitor by a one step ultrasonic deposition process |
US6468605B2 (en) * | 1997-05-01 | 2002-10-22 | Wilson Greatbatch Ltd. | Method for providing a one step ultrasonically coated substrate |
US20030068509A1 (en) * | 1997-05-01 | 2003-04-10 | Ashish Shah | Ruthenium-containing oxide ultrasonically coated substrate for use in a capacitor and method of manufacture |
US20030070920A1 (en) * | 1997-05-01 | 2003-04-17 | Ashish Shah | Electrode for use in a capacitor |
US20050016327A1 (en) * | 1998-08-26 | 2005-01-27 | Brewster James H. | Aerosol method and apparatus for making particulate products |
US20080057415A1 (en) * | 2004-12-13 | 2008-03-06 | Asml Holding N.V. | Method of manufacturing an ultrathin optical element |
US20080102019A1 (en) * | 2006-03-28 | 2008-05-01 | Korea Instiute Of Energy Research | Method and apparatus for synthesizing carbon nanotubes using ultrasonic evaporation |
WO2008108672A3 (en) * | 2007-03-05 | 2008-11-06 | Inst Optyki Stosowanej | An ultrasonic nebulizer |
US20090288601A1 (en) * | 2000-10-17 | 2009-11-26 | Nanogram Corporation | Coating formation by reactive deposition |
US8287938B1 (en) * | 2008-05-20 | 2012-10-16 | Ingo Scheer | Method to produce a coating and to fine-tune the coating morphology |
US20150053786A1 (en) * | 2013-08-21 | 2015-02-26 | Trimble Navigation Limited | Intelligent precision irrigation system |
EP3235574A1 (de) * | 2016-04-19 | 2017-10-25 | Camag AG | Derivatisierungsgerät und -verfahren |
CN111945134A (zh) * | 2019-05-15 | 2020-11-17 | 丰田自动车株式会社 | 雾发生装置及成膜装置 |
US20220111412A1 (en) * | 2020-01-17 | 2022-04-14 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Ultrasonic atomization apparatus |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7700808A (nl) * | 1977-01-27 | 1978-07-31 | Philips Nv | Werkwijze voor de vervaardiging van ijzer- oxidefotomaskers en ijzeroxidemaskers verkre- gen volgens deze werkwijze. |
FR2531880A1 (fr) * | 1982-08-18 | 1984-02-24 | Commissariat Energie Atomique | Procede de fabrication de couches minces |
FR2669246A1 (fr) * | 1990-11-16 | 1992-05-22 | Centre Nat Rech Scient | Procede sol-gel de depot de couches minces par pulverisation ultrasonore. |
DE4138722C2 (de) * | 1991-11-21 | 1994-05-26 | Dresden Ev Inst Festkoerper | Verfahren zum Verdampfen eines Stoffes für einen sich anschließenden Verarbeitungsprozeß |
GB9412676D0 (en) * | 1994-06-23 | 1994-08-10 | Jem Smoke Machine Co | Improvements in or relating to a method of creating an effect |
FR2758744B1 (fr) | 1997-01-30 | 1999-02-19 | Commissariat Energie Atomique | Systeme d'alimentation en liquide pour appareil dans lequel est maintenu un niveau constant |
AT409462B (de) * | 1998-10-08 | 2002-08-26 | Thallner Erich | Vorrichtung zum belacken von substraten |
US6174651B1 (en) | 1999-01-14 | 2001-01-16 | Steag Rtp Systems, Inc. | Method for depositing atomized materials onto a substrate utilizing light exposure for heating |
US6569249B1 (en) | 2000-04-18 | 2003-05-27 | Clemson University | Process for forming layers on substrates |
FI20095651A0 (fi) * | 2009-06-10 | 2009-06-10 | Beneq Oy | Menetelmä ja laitteisto lasisubstraatin pinnoittamiseksi |
DE102010055042B4 (de) | 2010-12-17 | 2013-06-06 | Eads Deutschland Gmbh | Verfahren und Vorrichtung zur Bildung eines Elektrolytfilmes auf einer Elektrodenoberfläche |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2512743A (en) * | 1946-04-01 | 1950-06-27 | Rca Corp | Jet sprayer actuated by supersonic waves |
FR1450684A (fr) * | 1965-07-07 | 1966-06-24 | Commissariat Energie Atomique | Procédé et dispositif de génération d'aérosols à partir d'un liquide |
-
1970
- 1970-10-23 FR FR7038371A patent/FR2110622A5/fr not_active Expired
-
1971
- 1971-10-13 CH CH1490171A patent/CH546830A/fr not_active IP Right Cessation
- 1971-10-18 DE DE2151809A patent/DE2151809C3/de not_active Expired
- 1971-10-18 GB GB4838471A patent/GB1362803A/en not_active Expired
- 1971-10-20 US US00190706A patent/US3840391A/en not_active Expired - Lifetime
- 1971-10-21 CA CA125,798A patent/CA952770A/en not_active Expired
- 1971-10-22 IT IT70479/71A patent/IT942738B/it active
- 1971-10-22 JP JP8384571A patent/JPS5515545B1/ja active Pending
- 1971-10-22 NL NLAANVRAGE7114556,A patent/NL178173C/xx not_active IP Right Cessation
Cited By (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4167045A (en) * | 1977-08-26 | 1979-09-11 | Interface Biomedical Laboratories Corp. | Cardiac and vascular prostheses |
US4526808A (en) * | 1979-07-05 | 1985-07-02 | E. I. Du Pont De Nemours And Company | Method for applying liquid to a yarn |
US4290384A (en) * | 1979-10-18 | 1981-09-22 | The Perkin-Elmer Corporation | Coating apparatus |
US4309456A (en) * | 1980-09-23 | 1982-01-05 | Rca Corporation | Method and apparatus for coating recorded discs with a lubricant |
US4431684A (en) * | 1981-06-02 | 1984-02-14 | E. I. Du Pont De Nemours & Co. | Ultrasonic vibrator for applying finish to yarn |
WO1985003460A1 (en) * | 1984-02-13 | 1985-08-15 | Schmitt Jerome J Iii | Method and apparatus for the gas jet deposition of conducting and dielectric thin solid films and products produced thereby |
US4788082A (en) * | 1984-02-13 | 1988-11-29 | Schmitt Jerome J | Method and apparatus for the deposition of solid films of a material from a jet stream entraining the gaseous phase of said material |
WO1986002744A1 (en) * | 1984-10-29 | 1986-05-09 | American Telephone & Telegraph Company | Method of producing devices using nonplanar lithography |
US4689247A (en) * | 1986-05-15 | 1987-08-25 | Ametek, Inc. | Process and apparatus for forming thin films |
US4950499A (en) * | 1987-01-27 | 1990-08-21 | The Foxboro Company | Method of making a compliant fluid-impermeable element |
US5002928A (en) * | 1987-06-04 | 1991-03-26 | Toa Nenryo Kogyo Kabushiki Kaisha | Method for forming oxide superconducting films with an ultrasonic wave sprayer |
US5160835A (en) * | 1987-06-12 | 1992-11-03 | Canon Kabushiki Kaisha | Photosensor having conductive shielding layer for electrostatic charge dissipation |
US4982079A (en) * | 1987-06-12 | 1991-01-01 | Canon Kabushiki Kaisha | Photo-sensor having plural transparent layers and a conductive layer to reduce electrostaslic charges |
US4939592A (en) * | 1987-06-12 | 1990-07-03 | Canon Kabushiki Kaisha | Contact photoelectric conversion device |
EP0294834A3 (en) * | 1987-06-12 | 1991-11-13 | Canon Kabushiki Kaisha | Photo sensor and its manufacturing method and an image reading apparatus having this photo sensor |
US4922117A (en) * | 1987-06-12 | 1990-05-01 | Canon Kabushiki Kaisha | Photoelectric conversion device having a constant potential wiring at the sides of the common wiring |
US5034372A (en) * | 1987-12-07 | 1991-07-23 | Mitsubishi Denki Kabushiki Kaisha | Plasma based method for production of superconductive oxide layers |
US5755885A (en) * | 1989-09-19 | 1998-05-26 | Canon Kabushiki Kaisha | Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation |
US5736195A (en) * | 1993-09-15 | 1998-04-07 | Mobium Enterprises Corporation | Method of coating a thin film on a substrate |
US5403617A (en) * | 1993-09-15 | 1995-04-04 | Mobium Enterprises Corporation | Hybrid pulsed valve for thin film coating and method |
WO1995007765A1 (en) * | 1993-09-15 | 1995-03-23 | Mobium Enterprises, Inc. | Hybrid pulsed valve for thin film coating and method |
US5534314A (en) * | 1994-08-31 | 1996-07-09 | University Of Virginia Patent Foundation | Directed vapor deposition of electron beam evaporant |
US5571332A (en) * | 1995-02-10 | 1996-11-05 | Jet Process Corporation | Electron jet vapor deposition system |
WO1996031291A1 (en) * | 1995-04-03 | 1996-10-10 | Mobium Enterprises Corporation | Method of coating a thin film on a substrate |
US6027673A (en) * | 1995-11-21 | 2000-02-22 | The Aerospace Corporation | Method of making indium oxide microspheres for antistatic coatings |
US6106890A (en) * | 1995-12-27 | 2000-08-22 | Vacuum Metallurgical Co., Ltd. | Method for forming a thin film of ultra-fine particles and an apparatus for the same |
US6235118B1 (en) | 1995-12-27 | 2001-05-22 | Vacuum Metallurgical Co., Ltd. | Method for forming a thin film of ultra-fine particles, and an apparatus for the same |
US6468605B2 (en) * | 1997-05-01 | 2002-10-22 | Wilson Greatbatch Ltd. | Method for providing a one step ultrasonically coated substrate |
US20030070920A1 (en) * | 1997-05-01 | 2003-04-17 | Ashish Shah | Electrode for use in a capacitor |
US5894403A (en) * | 1997-05-01 | 1999-04-13 | Wilson Greatbatch Ltd. | Ultrasonically coated substrate for use in a capacitor |
US20030068509A1 (en) * | 1997-05-01 | 2003-04-10 | Ashish Shah | Ruthenium-containing oxide ultrasonically coated substrate for use in a capacitor and method of manufacture |
AU735872B2 (en) * | 1997-05-01 | 2001-07-19 | Wilson Greatbatch Ltd. | Ultrasonically coated substrate for use in a capacitor and method of manufacture |
US20010024700A1 (en) * | 1997-05-01 | 2001-09-27 | Asbish Shah | Ruthenium-containing ultrasonically coated substrate for use in a capacitor and method of manufacture |
US20010026850A1 (en) * | 1997-05-01 | 2001-10-04 | Ashish Shah | Method for providing a coated substrate for use in a capacitor by a one step ultrasonic deposition process |
US6012647A (en) * | 1997-12-01 | 2000-01-11 | 3M Innovative Properties Company | Apparatus and method of atomizing and vaporizing |
US6045864A (en) * | 1997-12-01 | 2000-04-04 | 3M Innovative Properties Company | Vapor coating method |
US6245150B1 (en) | 1997-12-01 | 2001-06-12 | 3M Innovative Properties Company | Vapor coating apparatus |
US20050016327A1 (en) * | 1998-08-26 | 2005-01-27 | Brewster James H. | Aerosol method and apparatus for making particulate products |
US7214255B2 (en) * | 1998-08-26 | 2007-05-08 | Cabot Corporation | Aerosol method and apparatus for making particulate products |
US9163308B2 (en) * | 2000-10-17 | 2015-10-20 | Nanogram Corporation | Apparatus for coating formation by light reactive deposition |
US20090288601A1 (en) * | 2000-10-17 | 2009-11-26 | Nanogram Corporation | Coating formation by reactive deposition |
US20080057415A1 (en) * | 2004-12-13 | 2008-03-06 | Asml Holding N.V. | Method of manufacturing an ultrathin optical element |
US7900478B2 (en) * | 2004-12-13 | 2011-03-08 | Asml Holding N.V. | Method of manufacturing an ultrathin optical element |
US20080102019A1 (en) * | 2006-03-28 | 2008-05-01 | Korea Instiute Of Energy Research | Method and apparatus for synthesizing carbon nanotubes using ultrasonic evaporation |
US20110027164A1 (en) * | 2006-03-28 | 2011-02-03 | Korea Institute Of Energy Research | Method and apparatus for synthesizing carbon nanotubes using ultrasonic evaporation |
WO2008108672A3 (en) * | 2007-03-05 | 2008-11-06 | Inst Optyki Stosowanej | An ultrasonic nebulizer |
US8287938B1 (en) * | 2008-05-20 | 2012-10-16 | Ingo Scheer | Method to produce a coating and to fine-tune the coating morphology |
US20150053786A1 (en) * | 2013-08-21 | 2015-02-26 | Trimble Navigation Limited | Intelligent precision irrigation system |
EP3235574A1 (de) * | 2016-04-19 | 2017-10-25 | Camag AG | Derivatisierungsgerät und -verfahren |
CH712376A1 (de) * | 2016-04-19 | 2017-10-31 | Camag | Derivatisierungsgerät und -verfahren. |
CN107303548A (zh) * | 2016-04-19 | 2017-10-31 | 卡玛股份公司 | 衍生化仪器和衍生化方法 |
US10338041B2 (en) * | 2016-04-19 | 2019-07-02 | Camag | Derivatization apparatus and method |
CN107303548B (zh) * | 2016-04-19 | 2020-08-07 | 卡玛股份公司 | 衍生化仪器和衍生化方法 |
CN111945134A (zh) * | 2019-05-15 | 2020-11-17 | 丰田自动车株式会社 | 雾发生装置及成膜装置 |
US20220111412A1 (en) * | 2020-01-17 | 2022-04-14 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Ultrasonic atomization apparatus |
Also Published As
Publication number | Publication date |
---|---|
IT942738B (it) | 1973-04-02 |
CA952770A (en) | 1974-08-13 |
NL7114556A (enrdf_load_stackoverflow) | 1972-04-25 |
JPS5515545B1 (enrdf_load_stackoverflow) | 1980-04-24 |
DE2151809A1 (de) | 1972-04-27 |
FR2110622A5 (enrdf_load_stackoverflow) | 1972-06-02 |
DE2151809C3 (de) | 1974-11-14 |
NL178173B (nl) | 1985-09-02 |
CH546830A (fr) | 1974-03-15 |
NL178173C (nl) | 1989-10-16 |
DE2151809B2 (de) | 1974-03-28 |
GB1362803A (en) | 1974-08-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3840391A (en) | Method for the preparation of thin films by ultra-sonically vaporing solutions into an aerosol | |
US3880112A (en) | Device for the preparation of thin films | |
DE2444898A1 (de) | Verfahren und vorrichtung zum raschen aufdampfen von oxyden in duennen und festhaftenden schichten auf kunststofftraeger | |
US20160193627A1 (en) | Apparatuses and Methods for Stable Aerosol Deposition Using an Aerodynamic Lens System | |
NZ582387A (en) | Film forming apparatus and film forming method | |
US3434865A (en) | Process and apparatus for controlling a continuous spray to produce intermittent marks | |
CN102712529A (zh) | 具有防污表面的玻璃制品及其制造方法 | |
US4349371A (en) | Process for coating glass | |
EP0452006A2 (en) | A composite film and method of manufacturing the same | |
US20220088925A1 (en) | High-definition aerosol printing using an optimized aerosol distribution and aerodynamic lens system | |
US3592676A (en) | Method and apparatus for coating toroidal-shaped articles | |
EP0492880A2 (en) | Method of preparing metal oxide films | |
KR20160095339A (ko) | 스프레이 코팅유닛 및 이를 이용한 코팅시스템 | |
JPH06143586A (ja) | インクジェット記録ヘッド及びその製造方法 | |
EP0054189A1 (en) | Improved photochemical vapor deposition method | |
US4239817A (en) | Process and apparatus for coating one side of a metal strip with molten metal | |
US20030228240A1 (en) | Nozzle for matrix deposition | |
WO2023199081A1 (en) | Method and system for the manufacture of products with a structured surface | |
JP3221952B2 (ja) | Cvd用原料ガスの発生装置 | |
EP0095463B1 (en) | Method of placing a metal oxide film on a surface of a heated glass substrate | |
RU213067U1 (ru) | Устройство для нанесения наноразмерных покрытий на гибкие полимерные подложки большой площади | |
US8985750B2 (en) | Ink jet printing process using gas with molar mass lower than air during ink deposition | |
US3075861A (en) | Method and apparatus for producing electrically conducting coatings on vitreous substances | |
US7784306B1 (en) | Material deposition | |
JPH02149357A (ja) | 液体の微粒化処理装置 |