US3778656A - Ion source employing a microwave resonant cavity - Google Patents

Ion source employing a microwave resonant cavity Download PDF

Info

Publication number
US3778656A
US3778656A US00275304A US3778656DA US3778656A US 3778656 A US3778656 A US 3778656A US 00275304 A US00275304 A US 00275304A US 3778656D A US3778656D A US 3778656DA US 3778656 A US3778656 A US 3778656A
Authority
US
United States
Prior art keywords
cavity
ion source
magnetic field
mode
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00275304A
Other languages
English (en)
Inventor
C Fremiot
J Grando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of US3778656A publication Critical patent/US3778656A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field

Definitions

  • FIG. 1 A first figure.
  • This invention relates to an ion source which makes use of a microwave resonant cavity and finds an application in the equipment of particle accelerators.
  • sources of the duoplasmatron typedo not have a very long lifetime by reason of the presence of electrodes which are placed-in the plasma, the lifetime of these electrodes in particular the cathode being limited as a result of the intense bombardment to which they are subjected.
  • High-frequency discharge sources operating between 20 and 100 Mc/sec avoid this major obstacle but the electron density of the plasma which is created remains of low value.
  • Plasma sources of the type designed for the use of a cavity which is resonant at microwave frequencies are also known.
  • the interaction between microwave and plasma is considerably increased by the application of a static magnetic field such that the conditions of electron cyclotron resonance are satisfied.
  • ion source which employs'on the one hand a plasma source having microwave-frequency excitation at cyclotron resonance and, on the other hand, extraction means of the type employed in the duoplasmatron but specially adapted to the plasma source employed.
  • the ion source obtained in accordance with the invention accordingly has all the properties noted in the foregoing and thus represents a substantial technical improvement upon known sources.
  • an ion source comprising:
  • a plasma source employing a microwave cavity which is excited according to one of it modes of resonance and a static magnetic field which is adjusted to the electron cyclotron resonance
  • means for extracting the ions from said plasma comprising an expansion cup pierced by an aperture which communicates with said cavity and ionextraction electrodes which are brought to suitable potentials,
  • the density of said plasma is of maximum value in the vicinity of said aperture, and wherein said static magnetic field is of substantially zero value in the vicinity of said extraction electrodes.
  • said static magnetic field assumes the value corresponding to cyclotron resonance only in the vicinity of said expansion cup aperture.
  • a high static magnetic field gradient exists in the vicinity of said aperture.
  • the expansion cup has a low reluctance and constitutes a shield for the static magnetic field.
  • FIG. 1 is a diagram of a microwave circuit for the excitation of the ion source
  • FIG. 2 illustrates an ion source comprising a cylindri- .cal cavity of revolution in which the plasma is confined within a dielectric cylinder
  • FIG. 3 shows the curves representing the relationship between the height and the radius of the cylindrical cavity in respect of different modes of excitation
  • FIG. 4 shows the lines of electric force and the distribution of the amplitude of the field for the TE and TEm modes
  • FIG. 5 describes the TE and TE modes
  • FIG. 6 shows an alternative embodiment of the inventionemploying a truncated coaxial cavity which is excited in the TEM mode.
  • a microwave generator 1 excites an ion source 2 in accordance with the invention by means of a microwave circuit comprising a variable attenuator 3, a directional coupler 4, a matching element 5, a piston 6, a coaxial line 7 and an excitation antenna 9.
  • Pumping means serve to create a vacuum within the cavity by means of the duct 21.
  • the operation of said microwave-frequency excitation circuit is as follows 2
  • the generator 1 contains a microwave-frequency source such as a magnetron, for example, which produces the electromagnetic field.
  • the attenuator 3 serves to vary the power of the wave which is injected into the system.
  • the positions of the piston 6 and of the matching element 5 are adjusted so as to have the best possible matching of the cavity of the source 2. Mismatch is measured by means of the directional coupler 4 which draws-off a part of the wave reflected by the cavity towards the generator.
  • the ion source 2 is described in detail in FIG. 2 in one example of construction.
  • a cylinder 11 forms the side wall of the microwave cavity, said cavity being excited by a coaxial line 7 which is terminated by an antenna 9.
  • a tuning screw 12 serves to vary the resonant frequencies of the cavity to a slight extent.
  • An orifice 13 serves to inject the gas to be ionized into a leak-tight dielectric cylinder 14 which is coaxial with the cylinder 11.
  • O-ring seals 15 and 16 ensure leaktightness of the internal enclosure of the cylinder with respect to the remainder of the cylinder 11.
  • a cap 42 closes the cavity at the top end and an expansion cup 17 which is screwed onto the body of the cylinder 11 completes the resonant cavity 50.
  • Said cup defines an expansion chamber 40 which communicates with the cylinder 14 through the aperture 41. Only one of the extraction electrodes is illustrated this electrode 18 is negatively polarized with respect to the expansion cup 17 which can be connected to ground through the voltage source S. Coils 19 and 20 which are supplied with direct current produce a static magnetic field which is parallel to the axis of revolution of the cavity cylinder ll the complete assembly is mounted on the cylinder 21 leak-tightness with respect to the exterior is ensured by the O-ring seal 22.
  • the microwave-frequency excitation field propagates within the coaxial line 7 and excites the resonant cavity 50 by means of the antenna 9.
  • the shape and position of said antenna are conducive to excitation of the cavity in a transverse electric mode conventionally referred-to below as the TE mode characterized in that the electric field is in a transverse sectional plane of the cavity.
  • the gas to be ionized is injected through the opening 13 in accordance with this alternative embodiment of the invention, the gas penetrates into the interior of the dielectric cylinder 14 and is partially ionized under the action of the microwave electric field in conjunction with the static magnetic field, the amplitude of which is so adjusted that the cyclotronfrequency is in the vicinity of the frequency of the microwave field.
  • the static magnetic field produced by the coils l9 and 20 is very weak and even zero in the zone located near the extraction electrode 18 in order to prevent said field from disturbing the extraction of ions.
  • This is possible by fabricating the cup 17 from a metal having low reluctance such as soft iron, for example, in order to form a magnetic shield.
  • the sudden drop in amplitude of the static magnetic field across the aperture 41 therefore results in a high magnetic-field gradient at this point, thereby accelerating the plasma and facilitating the expansion of this latter within the chamber 40.
  • the electrode 18 which is brought to a highly negative potential makes it possible in accordance with a conventional method to effect a separation between the electrons and the ions.
  • the shape and potential of said electrode are such that the ions are guided towards the enclosure formed by the tube 21, a high vacuum being maintained by means of pumps (not shown) within said enclosure.
  • the dimensions of the cylindrical cavity of revolution can be determined as follows
  • the magnetic field is parallel to the axis of the cavity.
  • the microwave electric field contained in the cavity has a component at right angles to the magnetic field.
  • TE transverse-electric
  • TM transverse-magnetic
  • indices m, n and p are limited to the low values 0, 1 or 2.
  • the height h of the cavity is related to its radius a by relationships which are conventional in the theory of microwave resonant cavities. In FIG. 3, these variations are shown in the case of four modes and at a frequency of 10 gigacycles. Each of these curves has a vertical asymptote which defines a minimum radius a,,,,-,, By choosing for the radius of the cavity a value in the vicinity of a,,,,,,, the upper modes will not be excited.
  • the choice of the cavity excitation device is related to the mode of oscillation which is sought.
  • an antenna which is formed by the extension of the central conductor 9 of the coaxial 7 excites the modes in which the electric field has a component at right
  • the dimensions of the cavity having been defined by means of the curves of FIG. 3, it can be useful to have a means for fine tuning of the resonant frequency of said cavity.
  • this means is provided by the tuning screw 12 which is of metal.
  • the depth of penetration of said screw within the cavity increases the resonant frequency of this latter and vdisturbes the lines of force of a mode of resonance.
  • Different tuning means can be employed such as a cavity which makes use of a movable end-wall, for example. It is readily apparent that devices employing tuning means other than those of the screw type would not constitute any departure from the scope of this invention.
  • FIGS. 4 and 5 there are shown a few examples of distribution of the electric field in the case of the modes of resonance which are most commonly employed. It is known that the amplitudes of the radial and tangential components of the electric field of the mode TE,, are products of sinusoidal function of the polar angle, of sinusoidal function of the z coordinate, and of Bessel function of the radius vector.
  • FIG. 4 describes two modes having an index m 1.
  • FIG. 4a gives the direction of the lines of electric force of the TE mode and
  • FIG. 4b gives those of the TE, mode.
  • FIG. 40 gives the variations in relative amplitude of the electric fields of these modes for a polar angle 41: 0 and
  • FIG. 4d gives those for d) 1r/2.
  • FIG. 5 describes two modes having an index m 0. Nullification of the first index eliminates variations according to the polar angle, with the result that the lines of electric force are concentric circles. Variations in the tangential component of the electric fields are shown in FIG. 5c.
  • the energy dissipated within the dielectric of the cylinder which limits the plasma can be considerably reduced if the radius of said cylinder is chosen so as to ensure that the cylinder walls occupy azone of the cavity in which the amplitude of the electric fielduis small or even zero.
  • the amplitude of a component of the electric field should be zero at a point of the cavity other than a point located on the walls, it is necessary to ensure that the Bessel function which describes the variations in said amplitude as a function of the radius vector r is cancelled in respect-of values other than the ordinary values r or r a, ifa designates the radius of the cavity.
  • the index it it must in that case be at.
  • the modes TE, and TE possess this property.
  • the field is zero at d) 0 and r/a 0.35.
  • the field is zero when r/a 0.72.
  • a dielectric cylinder having a radius within the range of 0.35a to 0.72a will therefore be subjected to a low microwave-frequency field. So far as concerns the TE mode, the electric field is zero when r/a 0.55, irrespective of the polar angle 4).
  • a thin dielectric cylinder having a radius. r 0.55a and placed within a coaxial cavity resonant in the TE mode does therefore not produce any microwave-frequency loss.
  • the resonantfrequency drift of the cavity must be of lower value than the bandwidth of the resonance with plasma in order that the interaction between the wave derived from the generator and the plasma of the cavity should still be appreciable.
  • This condition is therefore written if fpy s f/20p
  • the values of frequency drift and of overvoltage drop depend on the mode of resonance considered, on the diameter R of the dielectric cylinder 14, on the static magnetic field employed and on the electron density n of the plasma at low plasma densities (n 10 m at 2,459 megacycles and at a pressure of 10 Torr) and with a plasma having small dimensions (R/a s 0.1), the frequency drift is not significant it can be considered that the cavity is resonant at the same frequency as in the case of operation on no load, that is to say at the frequency of the generator.
  • the drift decreases in magnitude as R/a is" smaller and, for the same value of R/a, the drift is lower in the TB, modes than in the TE modes. It is even possible to reduce said drift to zero by taking as a value of the static magnetic field the value of cyclotron resonance (875 Gauss at 2,459 megacycles), in which case the absorption of power by the plasma is of maximum value.
  • Cylindrical cavities of revolution are not the only structures which permit the application of the invention
  • the microwave cavity has a composite shape.
  • the cavity is coaxial along the greater part of its length and the remaining portion is a cylinder of revolution.
  • a cylindrical cavity of revolution 50 is traversed along its axis by a magnetic metallic cylinder 23 which passes through the top wall 24 the cylinder 23 is pierced by a duct 25 and this latter communicates with a tube 26 which is brazed to the cylinder 23 ,the central conductor of the coaxial line 7 terminates in a coupling loop 27.
  • An expansion cup 17 defines an expansion chamber 40 which communicates with the cavity 50 through an aperture 41 an extraction electrode 18 is negatively polarized by the source S.
  • a sole plate 28 of soft iron, two columns 29 and 30 and an end-plate 31 constitute together with the magnetic metallic cylinder 23 a magnetic circuit for the static magnetic field produced by the two coils 32 and 33 which are mounted in parallel O-ring seals 34 and 35 ensure leak-tightness of the cavity 50 and of the guide 21.
  • the microwave-frequency excitation field penetrates into the cavity through the coaxial line 7.
  • a current passes through the loop 27 and the resultant magnetic field excites the modes of resonance of the cavity which have a magnetic component at right angles to the plane of the loop.
  • This coupling mode thus excites a transverse-electric-magnetic (TEM) mode.
  • TEM transverse-electric-magnetic
  • This mode of excitation is strictly the TEM mode only in that portion of the cavity in which this latter may be assimilated with a coaxial cavity the gas to be ionized is injected via the tube 26 through the duct 25.
  • This gas is subjected to the microwave-frequency field only as it emerges from the duct 25 it is also in this zone that the static magnetic field produced by the coils 32 and 33 enhances the microwave-plasma interaction as a result of the cyclotron resonance phenomenon, with the result that the aperture 41 is located very near the zone in which the plasma has the highest density.
  • the shape of the magnetic circuit, and especially the presence of the soft iron soleplate 28 produces a high magneticfield gradient across the aperture 41 which promotes the extraction of the plasma as in the previous alternative embodiments.
  • the plasma then diffuses within the expansion chamber 40 and the electrode 19 performs its ion-extracting function substantially without disturbance by the magnetic field.
  • the lines of electric force in the vicinity of the plasma-formation zone are less well defined than in the alternative embodiment which employs the cylindrical cavity.
  • the microwave-frequency electric field is not perpendicular to the static magnetic field, the electron cyclotron resonance phenomenon which has been described still remains possible since the microwavefrequency electric field has a non-zero transverse component except possibly along the axis of the cavity. The electrons accordingly follow a helical path and no longer describe a plane curve.
  • the ion source in accordance with the invention can operate with a wide range of gases. Hydrogen in particular has led to the achievement of good results.
  • An ion source comprising a plasma source employing a microwave cavity which is excited according to one of its modes of resonance and a static magnetic field which is adjusted to the electron cyclotron resonance,
  • means for extracting the ions from said plasma comprising an expansion cup pierced by an aperture which communicates with said cavity and ionextraction electrodes brought to suitable potentials, wherein the density of said plasma is of maximum value inthe vicinity of said aperture and wherein said static magnetic field is of substantially zero value in the vicinity of said extraction electrodes.
  • An ion source according to claim 8 wherein the cavity is excited in accordance with the TE mode.
  • An ion source according to claim 8 wherein the cavity is excited in accordance with the TE mode.
  • microwave cavity is formed of a cylindrical cavity along the axis of which is disposed a hollow metallic cylinder having low reluctance which is in contact with the top wall of said cylindrical cavity and opens into said cavity in the proximity of said expansion cup aperture, said cylinder being part of the magnetic circuit which guides said static magnetic field.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
US00275304A 1971-07-29 1972-07-26 Ion source employing a microwave resonant cavity Expired - Lifetime US3778656A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7127812A FR2147497A5 (zh) 1971-07-29 1971-07-29

Publications (1)

Publication Number Publication Date
US3778656A true US3778656A (en) 1973-12-11

Family

ID=9081130

Family Applications (1)

Application Number Title Priority Date Filing Date
US00275304A Expired - Lifetime US3778656A (en) 1971-07-29 1972-07-26 Ion source employing a microwave resonant cavity

Country Status (4)

Country Link
US (1) US3778656A (zh)
DE (2) DE2237252A1 (zh)
FR (1) FR2147497A5 (zh)
GB (1) GB1352654A (zh)

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2621824A1 (de) * 1976-05-17 1977-11-24 Hitachi Ltd Mikrowellen-entladungs-ionenquelle
US4185213A (en) * 1977-08-31 1980-01-22 Reynolds Metals Company Gaseous electrode for MHD generator
DE3011686A1 (de) * 1979-03-30 1980-10-02 Tokyo Shibaura Electric Co Vorrichtung zur plasma-oberflaechenbehandlung von werkstoffen
DE3117252A1 (de) * 1980-05-02 1982-08-12 Nippon Telegraph & Telephone Public Corp., Tokyo Plasmaauftragvorrichtung
US4393333A (en) * 1979-12-10 1983-07-12 Hitachi, Ltd. Microwave plasma ion source
US4409520A (en) * 1980-03-24 1983-10-11 Hitachi, Ltd. Microwave discharge ion source
US4417178A (en) * 1980-02-13 1983-11-22 Richard Geller Process and apparatus for producing highly charged large ions and an application utilizing this process
US4507588A (en) * 1983-02-28 1985-03-26 Board Of Trustees Operating Michigan State University Ion generating apparatus and method for the use thereof
US4598231A (en) * 1982-11-25 1986-07-01 Nissin-High Voltage Co. Ltd. Microwave ion source
US4638216A (en) * 1983-05-20 1987-01-20 Commissariat A L'energie Atomique Electron cyclotron resonance ion source
US4649278A (en) * 1985-05-02 1987-03-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Generation of intense negative ion beams
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
DE3712971A1 (de) * 1987-04-16 1988-11-03 Plasonic Oberflaechentechnik G Verfahren und vorrichtung zum erzeugen eines plasmas
DE3738352A1 (de) * 1987-11-11 1989-05-24 Technics Plasma Gmbh Filamentloses magnetron-ionenstrahlsystem
US4859909A (en) * 1984-11-06 1989-08-22 Commissariat A L'energie Atomique Process and apparatus for igniting an ultra-high frequency ion source
US4987346A (en) * 1988-02-05 1991-01-22 Leybold Ag Particle source for a reactive ion beam etching or plasma deposition installation
US5021919A (en) * 1988-10-14 1991-06-04 Leybold Aktiengesellschaft Device for the generation of electrically charged and/or uncharged particles
US5053678A (en) * 1988-03-16 1991-10-01 Hitachi, Ltd. Microwave ion source
DE19513345A1 (de) * 1995-04-08 1997-01-02 Ehret Hans P ECR-Ionenquelle
DE19600223A1 (de) * 1996-01-05 1997-07-17 Ralf Dr Dipl Phys Spitzl Vorrichtung zur Erzeugung von Plasmen mittels Mikrowellen
DE19608949A1 (de) * 1996-03-08 1997-09-11 Ralf Dr Spitzl Vorrichtung zur Erzeugung von leistungsfähigen Mikrowellenplasmen
WO1999034396A2 (de) * 1997-12-24 1999-07-08 Forschungszentrum Karlsruhe Gmbh Anlage mit einer elektron-zyklotron resonanz-ionenquelle zur dotierung von gefässstützen mit radioaktiven und nicht-radioaktiven atomen
DE4340224C2 (de) * 1992-11-26 2003-10-16 Accentus Plc Didcot Einrichtung zum Erzeugen von Plasma mittels Mikrowellenstrahlung
WO2005028310A3 (en) * 2003-03-20 2005-08-11 Elwing Llc Spacecraft thruster
US20070234705A1 (en) * 2003-03-20 2007-10-11 Gregory Emsellem Spacecraft thruster
US20080093506A1 (en) * 2004-09-22 2008-04-24 Elwing Llc Spacecraft Thruster
DE19900437B4 (de) * 1999-01-11 2009-04-23 Ehret, Hans-P. Verfahren und Vorrichtung zur Ionenimplantation in Festkörpern und/oder zur Beschichtung von Festkörperoberflächen sowie die Verwendung von Verfahren und Vorrichtung
CN106102301A (zh) * 2016-07-29 2016-11-09 中国原子能科学研究院 紧凑型超导质子回旋加速器中可耐高压的静电偏转板
US20170365494A1 (en) * 2015-03-06 2017-12-21 Jiaco Instruments Holding B.V. System and Method for Decapsulation of Plastic Integrated Circuit Packages
CN112424901A (zh) * 2018-07-10 2021-02-26 能源环境和技术研究中心 用于回旋加速器的低腐蚀内部离子源

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240007A (en) * 1979-06-29 1980-12-16 International Business Machines Corporation Microchannel ion gun
JPS5779621A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device
DE3703207A1 (de) * 1987-02-04 1988-08-18 Loet Und Schweissgeraete Gmbh Hochfrequenzionenquelle
KR101260566B1 (ko) 2007-10-10 2013-05-06 엠케이에스 인스트루먼츠, 인코포레이티드 사중극 또는 비행시간형 질량 분석기를 이용한 화학적 이온화 반응 또는 양자 전이 반응 질량 분석법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3418206A (en) * 1963-04-29 1968-12-24 Boeing Co Particle accelerator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3418206A (en) * 1963-04-29 1968-12-24 Boeing Co Particle accelerator

Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2621824A1 (de) * 1976-05-17 1977-11-24 Hitachi Ltd Mikrowellen-entladungs-ionenquelle
US4185213A (en) * 1977-08-31 1980-01-22 Reynolds Metals Company Gaseous electrode for MHD generator
DE3011686A1 (de) * 1979-03-30 1980-10-02 Tokyo Shibaura Electric Co Vorrichtung zur plasma-oberflaechenbehandlung von werkstoffen
US4393333A (en) * 1979-12-10 1983-07-12 Hitachi, Ltd. Microwave plasma ion source
US4417178A (en) * 1980-02-13 1983-11-22 Richard Geller Process and apparatus for producing highly charged large ions and an application utilizing this process
US4409520A (en) * 1980-03-24 1983-10-11 Hitachi, Ltd. Microwave discharge ion source
DE3117252A1 (de) * 1980-05-02 1982-08-12 Nippon Telegraph & Telephone Public Corp., Tokyo Plasmaauftragvorrichtung
US4598231A (en) * 1982-11-25 1986-07-01 Nissin-High Voltage Co. Ltd. Microwave ion source
US4507588A (en) * 1983-02-28 1985-03-26 Board Of Trustees Operating Michigan State University Ion generating apparatus and method for the use thereof
US4638216A (en) * 1983-05-20 1987-01-20 Commissariat A L'energie Atomique Electron cyclotron resonance ion source
US4859909A (en) * 1984-11-06 1989-08-22 Commissariat A L'energie Atomique Process and apparatus for igniting an ultra-high frequency ion source
US4649278A (en) * 1985-05-02 1987-03-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Generation of intense negative ion beams
DE3712971A1 (de) * 1987-04-16 1988-11-03 Plasonic Oberflaechentechnik G Verfahren und vorrichtung zum erzeugen eines plasmas
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
DE3738352A1 (de) * 1987-11-11 1989-05-24 Technics Plasma Gmbh Filamentloses magnetron-ionenstrahlsystem
US4987346A (en) * 1988-02-05 1991-01-22 Leybold Ag Particle source for a reactive ion beam etching or plasma deposition installation
US5053678A (en) * 1988-03-16 1991-10-01 Hitachi, Ltd. Microwave ion source
US5021919A (en) * 1988-10-14 1991-06-04 Leybold Aktiengesellschaft Device for the generation of electrically charged and/or uncharged particles
DE4340224C2 (de) * 1992-11-26 2003-10-16 Accentus Plc Didcot Einrichtung zum Erzeugen von Plasma mittels Mikrowellenstrahlung
DE19513345A1 (de) * 1995-04-08 1997-01-02 Ehret Hans P ECR-Ionenquelle
DE19513345C2 (de) * 1995-04-08 2000-08-03 Ehret Hans P ECR-Ionenquelle
DE19600223A1 (de) * 1996-01-05 1997-07-17 Ralf Dr Dipl Phys Spitzl Vorrichtung zur Erzeugung von Plasmen mittels Mikrowellen
DE19608949A1 (de) * 1996-03-08 1997-09-11 Ralf Dr Spitzl Vorrichtung zur Erzeugung von leistungsfähigen Mikrowellenplasmen
WO1999034396A3 (de) * 1997-12-24 1999-11-11 Karlsruhe Forschzent Anlage mit einer elektron-zyklotron resonanz-ionenquelle zur dotierung von gefässstützen mit radioaktiven und nicht-radioaktiven atomen
US6495842B1 (en) 1997-12-24 2002-12-17 Forschungszentrum Karlsruhe Gmbh Implantation of the radioactive 32P atoms
WO1999034396A2 (de) * 1997-12-24 1999-07-08 Forschungszentrum Karlsruhe Gmbh Anlage mit einer elektron-zyklotron resonanz-ionenquelle zur dotierung von gefässstützen mit radioaktiven und nicht-radioaktiven atomen
DE19900437B4 (de) * 1999-01-11 2009-04-23 Ehret, Hans-P. Verfahren und Vorrichtung zur Ionenimplantation in Festkörpern und/oder zur Beschichtung von Festkörperoberflächen sowie die Verwendung von Verfahren und Vorrichtung
JP2007524784A (ja) * 2003-03-20 2007-08-30 エルウィング エルエルシー 宇宙船のスラスタ
KR101075218B1 (ko) 2003-03-20 2011-10-19 엘윙 엘엘씨 우주선 스러스터
US20070234705A1 (en) * 2003-03-20 2007-10-11 Gregory Emsellem Spacecraft thruster
US7461502B2 (en) * 2003-03-20 2008-12-09 Elwing Llc Spacecraft thruster
WO2005028310A3 (en) * 2003-03-20 2005-08-11 Elwing Llc Spacecraft thruster
CN1761816B (zh) * 2003-03-20 2010-06-23 埃尔温有限公司 航天器的推进器
AU2004274389B2 (en) * 2003-03-20 2011-03-17 Elwing Llc Spacecraft thruster
US20080093506A1 (en) * 2004-09-22 2008-04-24 Elwing Llc Spacecraft Thruster
US20170365494A1 (en) * 2015-03-06 2017-12-21 Jiaco Instruments Holding B.V. System and Method for Decapsulation of Plastic Integrated Circuit Packages
US11295968B2 (en) * 2015-03-06 2022-04-05 Jiaco Instruments Holding B.V. System and method for decapsulation of plastic integrated circuit packages
CN106102301A (zh) * 2016-07-29 2016-11-09 中国原子能科学研究院 紧凑型超导质子回旋加速器中可耐高压的静电偏转板
CN106102301B (zh) * 2016-07-29 2019-01-29 中国原子能科学研究院 紧凑型超导质子回旋加速器中可耐高压的静电偏转板
CN112424901A (zh) * 2018-07-10 2021-02-26 能源环境和技术研究中心 用于回旋加速器的低腐蚀内部离子源
EP3799104A4 (en) * 2018-07-10 2021-07-28 Centro de Investigaciones Energéticas Medioambientales y Tecnologicas (CIEMAT) LOW EMISSIONS INTERNAL ION SOURCE FOR CYCLOTRONS
CN112424901B (zh) * 2018-07-10 2024-02-13 能源环境和技术研究中心 用于回旋加速器的低腐蚀内部离子源

Also Published As

Publication number Publication date
GB1352654A (en) 1974-05-08
DE2237252A1 (de) 1973-02-01
DE7228091U (de) 1973-09-20
FR2147497A5 (zh) 1973-03-09

Similar Documents

Publication Publication Date Title
US3778656A (en) Ion source employing a microwave resonant cavity
KR100291152B1 (ko) 플라즈마발생장치
US4960073A (en) Microwave plasma treatment apparatus
CN109786205B (zh) 电子回旋共振离子源
KR940010844B1 (ko) 이온 원(源)
JPH0732072B2 (ja) プラズマ励起装置および方法ならびにプラズマ発生装置
US4780642A (en) Electron cyclotron resonance ion source with coaxial injection of electromagnetic waves
JPS6276137A (ja) イオン源
US4638216A (en) Electron cyclotron resonance ion source
US2817045A (en) Electromagnetic wave generator
ITFI940194A1 (it) Sorgente di plasma a radiofrequenza
US6812647B2 (en) Plasma generator useful for ion beam generation
US5726412A (en) Linear microwave source for plasma surface treatment
US4859909A (en) Process and apparatus for igniting an ultra-high frequency ion source
CN112424901B (zh) 用于回旋加速器的低腐蚀内部离子源
US3313979A (en) Device for producing electro-magnetic oscillations of very high frequency
Merlino et al. Hysteresis in a low‐pressure argon discharge
RU2246035C1 (ru) Ионный двигатель кошкина
US4639642A (en) Sphericon
US5506405A (en) Excitation atomic beam source
US4931698A (en) Ion source
JP3055806B2 (ja) マイクロ波によるプラズマ発生装置
Amemiya et al. Electron energy distribution in multicusp-type ECR plasma
JP3585512B2 (ja) マイクロ波プラズマ発生装置
JPH0217636A (ja) ドライエッチング装置