US3770497A - Method of producing a two layer contact piece - Google Patents

Method of producing a two layer contact piece Download PDF

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Publication number
US3770497A
US3770497A US00128060A US3770497DA US3770497A US 3770497 A US3770497 A US 3770497A US 00128060 A US00128060 A US 00128060A US 3770497D A US3770497D A US 3770497DA US 3770497 A US3770497 A US 3770497A
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United States
Prior art keywords
metal
diffusion
original body
auxiliary
original
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Expired - Lifetime
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US00128060A
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English (en)
Inventor
H Hassler
H Schreiner
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Siemens AG
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Siemens AG
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Publication date
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/0203—Contacts characterised by the material thereof specially adapted for vacuum switches

Definitions

  • the invention relates to a method of producing a two layer contact piece for high vacuum power switches.
  • l l Cl 117/227
  • An auxiliary metal and a diffusion metal are alloyed by 200/166 CM, 200/144 B, 29/630 C diffusion into a surface of a metallic original body of [51] Int. Cl. HOlh 33/66 high electrical conductivity
  • the auxiliary meta] forms [58] Field of Search 1 17/212, 227, 22; a molten phase with the diff i metal and the metal- 29/622, 630 (3; 200/166 C, 166 CM; 1 lic original body.
  • the volume of auxiliary metal provides a defined diffusion depth in the original body, at [56] References C'ted predetermined diffusion conditions.
  • the present invention relates to a method of producing a two layer contact piece for high vacuum power switches.
  • Contact materials for high power switches are required to have extremely low amounts of gas, small chopping effects, small welding power and low contact resistance. Also needed is a low burn-off.
  • the chopping effect causes the arc to break or be interrupted during the switching of low currents, whereby voltage peaks occur as a result of the inductivity effect and may result in breakthroughs.
  • a small amount of a metal with high vapor pressure is added to the contact material, which reduces the constriction of the are caused by current forces.
  • Bonded materials with a high melting metal skeleton structure, such as tungsten, molybdenum or rhenium are usable up to a limit, as contact materials in vacuum power switches.
  • Metals having an atomic weight 65 as for example, copper,iron, cobalt,
  • nickel and beryllium may be considered for use as original metals that yield an action supplement of high vapor pressure, as an antichopping component.
  • antichopping component such as, e.g., bismuth
  • the object of the present invention is to overcome heretofore encountered difficulties during the production of two layer contact pieces.
  • an auxiliary metal and a diffusion metal is alloyed, through diffusion, into a surface of a metallic original body of high electrical conductivity, whereby the auxiliary metal forms a molten phase with the diffusion metal and the metallic original body.
  • the auxiliary metal and the diffusion metal are brought into contact with a surface of the metallic body as an alloy or a power mixture of specified composition, as a loose powder or a pulverulent pressedmass.
  • the alloy, the powder mixture or the pulverulent pressed mass are subsequently alloyed into the metallic original body by means of diffusion, so that the amount of the auxiliary metal provides a defined diffusion depth in the original body at predetermined diffusion conditions.
  • Such metals as auxiliary metals, which form a liquid phase with said metallic original body and with the diffusion metal, at least 50C below the melting temperature of the metallic original body.
  • auxiliary metal offers the advantage that a diffusion temperature may be used which is considerably below the melting temperature of the metallic original body.
  • the original body consists of copper
  • the auxiliary metal of silver and the diffusion metal of bismuth a diffusion temperature between 800 and 1,000 C is suitable in order to obtain, within a period of 10 to 30 minutes, a state of equilibrium and to produce thereby the desired diffusion layer.
  • a desired equilibrium Bi content of 2% would result at a diffusion temperature of 1,075 C, without the use of an auxiliary metal. Since this temperature is only 8 C below the melting temperature of the copper, it is virtually impossible to comply with the required temperature in a furnace for the pur pose of manufacture.
  • FIGS. 1 to 5 the steps of carrying out the invention.
  • annular recess 12 with dimensions (1), 40 mm, (b, 30 mm, depth 5 mm, and corresponds approximately to the future contact area, is provided in a surface of the original body.
  • a pressed mass of powder 13 (FIG. 3) comprising a mixture of 10 g silver, 15 g copper and l g bismuth, and adjusted to a diffusion temperature of l,000 C is inserted into the recess 12. This produces a liquid phase, forming an equilibrium of 10 g silver and approximately 40 g copper, which contains a uniform distribution of the bismuth.
  • the liquid phase which corresponds to the diffusion range 14, is shown in FIG. 4.
  • the contact piece which consists of the carrier layer 1 1 and the indiffused contact area I5, is produced as shown in FIG. 5.
  • the diffusion zone boundary of the contact area 15 is illustrated by the dashed lines.
  • the contact piece, thus obtained, may be easily connected by eutectic means with the carrier metal copper, through customary solders such as for example, AgCu.
  • auxiliary metals When iron, nickel, cobalt or beryllium are used for the original body, appropriate auxiliary metals are to be selected which form at diffusion temperature a liquid phase with the metal of the original body that melts at lower temperatures than the metal of the original body.
  • the liquid phase produces, in the form of mixed crys tals, an eutectic or peritectic, depending on the solubility rate, and the amount of auxiliary metal and diffusion metal is determined for a desired depth of penetration.
  • the auxiliary metal may be selected from Ag, Cd, Ge, In, Mg, Si, Sn, Zn, Ce and the diffusion metal may be selected from Te, Bi, Pb, and Sb.
  • the auxiliary metal may be selected from Cu, Be, Ce, Fe+(l4.5) wt-% C, Ge, Nb, Sb, Si, Ti and the diffusion metal may be selected from Te, Bi and Pb.
  • the auxiliary metal When using Co as the original metal the auxiliary metal may be selected from B, Co+Il-3) wt-% C, Ge, Nb, Sb, Si, Sn, Ti and the diffusion metal may be selected from Te, Bi and Pb.
  • the auxiliary metal may be selected from B, Be, Ni+( l2.5) wt-% C,
  • Ce, Mg, Nb, Sb, Si, Sn and the diffusion metal may be selected from Te, Bi or Pb.
  • the auxiliary metal may be selected from Ag, Cu, Si and the diffusion metal may be selected from Te, Bi or Pb.
  • a process for preparing a two layer contact piece for high vacuum power switches which comprises alloying a diffusion metal and an auxiliary metal into a surface of a metallic original body of high electrical conductivity, thereby forming a molten phase with the diffusion metal and the metallic original body, said auxiliary metal being a metal which forms a liquid phase with the metallic original body and with the diffusion metal at a temperature at least 50 C below the melting point of the metallic original body.

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  • Manufacture Of Switches (AREA)
  • Powder Metallurgy (AREA)
  • Contacts (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
US00128060A 1970-03-26 1971-03-25 Method of producing a two layer contact piece Expired - Lifetime US3770497A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702014638 DE2014638A1 (de) 1970-03-26 1970-03-26 Verfahren zur Herstellung eines Zweischichten Kontaktstuckes

Publications (1)

Publication Number Publication Date
US3770497A true US3770497A (en) 1973-11-06

Family

ID=5766393

Family Applications (1)

Application Number Title Priority Date Filing Date
US00128060A Expired - Lifetime US3770497A (en) 1970-03-26 1971-03-25 Method of producing a two layer contact piece

Country Status (7)

Country Link
US (1) US3770497A (es)
CH (1) CH515599A (es)
DE (1) DE2014638A1 (es)
ES (1) ES389569A1 (es)
FR (1) FR2084094A5 (es)
GB (1) GB1351215A (es)
SE (1) SE376323B (es)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3845543A (en) * 1972-03-17 1974-11-05 Sprecher & Schuh Ag Method of producing a vacuum switch contact
US4129760A (en) * 1976-05-28 1978-12-12 Tokyo Shibaura Electric Co., Ltd. Vacuum circuit breaker
US4129761A (en) * 1976-05-27 1978-12-12 Tokyo Shibaura Electric Co., Ltd. Vacuum circuit breaker
US4530815A (en) * 1982-06-29 1985-07-23 Mitsubishi Denki Kabushiki Kaisha Method of producing a contact device for a switch
US4760223A (en) * 1986-10-23 1988-07-26 Kabushiki Kaisha Toshiba Vacuum circuit interrupter
US5254185A (en) * 1989-12-15 1993-10-19 Calor-Emag Ag Method for producing a surface-coated component, in particular a contact piece for a vacuum switch, and device for executing this method
US5334809A (en) * 1990-02-14 1994-08-02 Particle Interconnect, Inc. Particle enhanced joining of metal surfaces
WO1996032201A1 (en) * 1995-04-10 1996-10-17 Lockheed Martin Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same
US5653827A (en) * 1995-06-06 1997-08-05 Starline Mfg. Co., Inc. Brass alloys
US5726407A (en) * 1995-03-10 1998-03-10 Kabushiki Kaisha Toshiba Contact electrode for vacuum interrupter
DE19809306A1 (de) * 1998-03-05 1999-09-09 Abb Patent Gmbh Kontaktstück für eine Vakuumkammer und Verfahren zur Herstellung des Kontaktstückes
US5964966A (en) * 1997-09-19 1999-10-12 Lockheed Martin Energy Research Corporation Method of forming biaxially textured alloy substrates and devices thereon
US6022832A (en) * 1997-09-23 2000-02-08 American Superconductor Corporation Low vacuum vapor process for producing superconductor articles with epitaxial layers
US6027564A (en) * 1997-09-23 2000-02-22 American Superconductor Corporation Low vacuum vapor process for producing epitaxial layers
US6114287A (en) * 1998-09-30 2000-09-05 Ut-Battelle, Llc Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom
US6296701B1 (en) 1998-09-30 2001-10-02 Ut-Battelle, Llc Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom
US6428635B1 (en) 1997-10-01 2002-08-06 American Superconductor Corporation Substrates for superconductors
US6458223B1 (en) 1997-10-01 2002-10-01 American Superconductor Corporation Alloy materials
US6475311B1 (en) 1999-03-31 2002-11-05 American Superconductor Corporation Alloy materials

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6059691B2 (ja) * 1979-02-23 1985-12-26 三菱電機株式会社 真空しや断器用接点及びその製造方法
EP0234246A1 (de) * 1986-01-30 1987-09-02 Siemens Aktiengesellschaft Schaltkontaktstücke für Vakuumschaltgeräte und Verfahren zu deren Herstellung
GB9102062D0 (en) * 1991-01-31 1991-03-13 Otter Controls Ltd Improvements relating to conductors for switching applications

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2049771A (en) * 1935-02-06 1936-08-04 Mallory & Co Inc P R Method of making silver contacts
US2379232A (en) * 1943-11-02 1945-06-26 Mallory & Co Inc P R Metallic compositions containing bismuth
US3008022A (en) * 1960-06-15 1961-11-07 Gen Electric Contact structure for a vacuum-type circuit interrupter
US3502465A (en) * 1967-05-24 1970-03-24 Mitsubishi Electric Corp Contact alloys for vacuum circuit interrupters
US3596027A (en) * 1968-07-30 1971-07-27 Tokyo Shibaura Electric Co Vacuum circuit breaker contacts consisting essentially of a copper matrix and solid solution particles of copper-tellurium and copper-selenium
US3610859A (en) * 1967-08-05 1971-10-05 Siemens Ag Composite contact structure for vacuum-type circuit interrupters

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2049771A (en) * 1935-02-06 1936-08-04 Mallory & Co Inc P R Method of making silver contacts
US2379232A (en) * 1943-11-02 1945-06-26 Mallory & Co Inc P R Metallic compositions containing bismuth
US3008022A (en) * 1960-06-15 1961-11-07 Gen Electric Contact structure for a vacuum-type circuit interrupter
US3502465A (en) * 1967-05-24 1970-03-24 Mitsubishi Electric Corp Contact alloys for vacuum circuit interrupters
US3610859A (en) * 1967-08-05 1971-10-05 Siemens Ag Composite contact structure for vacuum-type circuit interrupters
US3596027A (en) * 1968-07-30 1971-07-27 Tokyo Shibaura Electric Co Vacuum circuit breaker contacts consisting essentially of a copper matrix and solid solution particles of copper-tellurium and copper-selenium

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3845543A (en) * 1972-03-17 1974-11-05 Sprecher & Schuh Ag Method of producing a vacuum switch contact
US4129761A (en) * 1976-05-27 1978-12-12 Tokyo Shibaura Electric Co., Ltd. Vacuum circuit breaker
US4129760A (en) * 1976-05-28 1978-12-12 Tokyo Shibaura Electric Co., Ltd. Vacuum circuit breaker
US4530815A (en) * 1982-06-29 1985-07-23 Mitsubishi Denki Kabushiki Kaisha Method of producing a contact device for a switch
US4760223A (en) * 1986-10-23 1988-07-26 Kabushiki Kaisha Toshiba Vacuum circuit interrupter
US5254185A (en) * 1989-12-15 1993-10-19 Calor-Emag Ag Method for producing a surface-coated component, in particular a contact piece for a vacuum switch, and device for executing this method
US5835359A (en) * 1990-02-14 1998-11-10 Particle Interconnect Corporation Electrical interconnect using particle enhanced joining of metal surfaces
US5334809A (en) * 1990-02-14 1994-08-02 Particle Interconnect, Inc. Particle enhanced joining of metal surfaces
CN1065068C (zh) * 1995-03-10 2001-04-25 东芝株式会社 真空断续器的接触电极
US5726407A (en) * 1995-03-10 1998-03-10 Kabushiki Kaisha Toshiba Contact electrode for vacuum interrupter
WO1996032201A1 (en) * 1995-04-10 1996-10-17 Lockheed Martin Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same
AU713892B2 (en) * 1995-04-10 1999-12-16 Lockheed Martin Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same
US5898020A (en) * 1995-04-10 1999-04-27 Goyal; Amit Structures having enhanced biaxial texture and method of fabricating same
US5958599A (en) * 1995-04-10 1999-09-28 Lockheed Martin Energy Research Corporation Structures having enhanced biaxial texture
US5741377A (en) * 1995-04-10 1998-04-21 Martin Marietta Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same
US5653827A (en) * 1995-06-06 1997-08-05 Starline Mfg. Co., Inc. Brass alloys
US6106615A (en) * 1997-09-19 2000-08-22 Goyal; Amit Method of forming biaxially textured alloy substrates and devices thereon
US5964966A (en) * 1997-09-19 1999-10-12 Lockheed Martin Energy Research Corporation Method of forming biaxially textured alloy substrates and devices thereon
US6022832A (en) * 1997-09-23 2000-02-08 American Superconductor Corporation Low vacuum vapor process for producing superconductor articles with epitaxial layers
US6027564A (en) * 1997-09-23 2000-02-22 American Superconductor Corporation Low vacuum vapor process for producing epitaxial layers
US6426320B1 (en) 1997-09-23 2002-07-30 American Superconductors Corporation Low vacuum vapor process for producing superconductor articles with epitaxial layers
US6428635B1 (en) 1997-10-01 2002-08-06 American Superconductor Corporation Substrates for superconductors
US6458223B1 (en) 1997-10-01 2002-10-01 American Superconductor Corporation Alloy materials
DE19809306A1 (de) * 1998-03-05 1999-09-09 Abb Patent Gmbh Kontaktstück für eine Vakuumkammer und Verfahren zur Herstellung des Kontaktstückes
US6114287A (en) * 1998-09-30 2000-09-05 Ut-Battelle, Llc Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom
US6296701B1 (en) 1998-09-30 2001-10-02 Ut-Battelle, Llc Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom
US6555256B1 (en) 1998-09-30 2003-04-29 Ut-Battelle, Llc Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom
US6475311B1 (en) 1999-03-31 2002-11-05 American Superconductor Corporation Alloy materials

Also Published As

Publication number Publication date
DE2014638A1 (de) 1971-10-14
ES389569A1 (es) 1974-03-16
FR2084094A5 (es) 1971-12-17
GB1351215A (en) 1974-04-24
SE376323B (es) 1975-05-12
CH515599A (de) 1971-11-15

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