US3746496A - Device for producing tubular bodies of semiconductor material, preferably silicon or germanium - Google Patents

Device for producing tubular bodies of semiconductor material, preferably silicon or germanium Download PDF

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Publication number
US3746496A
US3746496A US00113286A US3746496DA US3746496A US 3746496 A US3746496 A US 3746496A US 00113286 A US00113286 A US 00113286A US 3746496D A US3746496D A US 3746496DA US 3746496 A US3746496 A US 3746496A
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US
United States
Prior art keywords
carriers
carrier
tubular
bridge
coolant
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Expired - Lifetime
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US00113286A
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English (en)
Inventor
W Dietze
K Reuschel
H Sandmann
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Siemens AG
Siemens Corp
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Siemens Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Definitions

  • ABSTRACT A device for producing tubular bodies of semiconductor material, preferably of silicon or germanium.
  • carbon material e.g. graphite
  • an electrode e.g. aluminum, copper, and zinc.
  • a conductive bridge preferably of carbon.
  • Our invention relates to a device for producing tubular bodies of semiconductor material, preferably of silicon or germanium, whereby a rod or tubular shaped carrier is heated in a reaction gas able to precipitate the respective semiconductor, so that the outer jacket area of the carrier becomes coated with a layer of semiconductor material and, after removal of the carrier, defines the desired tube.
  • the invention provides that at least two vertical carriers of carbon are each held at their lower end by an electrode and that their upper ends are interconnected via a conductive bridge, preferably of carbon.
  • This device shows similarities to a certain known device for producing semiconductor rods, particularly of highly pure silicon, wherein rod shaped original carriers of polycrystalline or monocrystalline silicon are arranged, similarly as the carriers in the method according to the invention, in a reaction vessel and are heated to the high temperatures necessary for precipitation by electric current, more particularly an alternating current, supplied via the electrodes.
  • electric current more particularly an alternating current
  • quires further features which permit a disturbance free removal of carriers from the semiconductor layer which defines the tube and is preferably polycrystalline. These features, however, are not customary during precipitation for the production of rod shaped semiconductor crystals.
  • Tubular carriers are, preferably, used in the method according to the invention, which are passed by a cooling gas, particularly argon or nitrogen or by a liquid coolant, while the precipitation of the respective semiconductor material takes place at their outside.
  • a cooling gas particularly argon or nitrogen or by a liquid coolant
  • a preferred embodiment of the device is so characterized that at least one carrier intended for precipitation is tubular in shape and designed as a flow channel for an electrically insulated, gaseous or liquid coolant.
  • FIG. 1 schematically illustrates the situation where a precipitation may take place at both carriers, or only at one carrier
  • FIG. 2 illustrates both carriers positioned concentrically, relative to each other.
  • the inner carrier serves as a connecting bridge, not simultaneously as a carrier for precipitation.
  • the carrier insures, however, a uniform heating of the outer carrier by serving as a substrate for the semiconductor layer.
  • the device shown in FIG. 1 comprises a bottom plate 1 of quartz or a heat resistant inert metal, which is hermetically connected with a quartz bell 2.
  • a quartz bell 2 In the interior of this reaction chamber defined by parts 1 and 2, are situated two vertical, tubular carriers 3, one end of each being inserted with their ends into appropriate bores 4 of respective supporting electrodes 5.
  • the electrodes are in conductive connection with the leads 11.
  • the leads 11 are led through the bottom plate 1 of the reaction vessel, in mutual insulation.
  • the upper ends of the vertical tubular carriers 3 are interconnected with a conductive bridge 6, preferably of the same material as the carriers 3.
  • the upper ends are inserted into bores 7 of the bridge 6.
  • a correspond ing geometrical adjustment insures an integrity, electrical contact.
  • the bores 7 are tapered somewhat upwardly while bores 4 are somewhat tapered in a downward direction so that the tubular carriers 3 are seated in electrodes 5 and in the bridge 6 as closures.
  • the interior of the tubes 3 is open toward the reaction chamber via bores 7 so that a gaseous coolant reaches the reaction chamber, flowing via a respective lead 8, led through the bottom 1 of the reaction vessel via the bores 4 in the electrodes 5 and flowing into the tubular carriers 3.
  • the coolant is either hydrogen, which as a reduction agent, is a direct participant in the reaction process or else it functions as an inert gas, for example, argon or nitrogen, which serves only as a diluent for the active components of the reaction
  • reaction gases constituting,for example in the case of silicon, a mixture of SiHCl or SiCl and hydrogen, if necessary, together with a gaseous dopant, are admitted into the reaction chamber, through an inlet 9 which is situated centrally in the bottom 1 of the reaction vessel.
  • the outlet tube for the consumed gas Positioned concentrically thereto, is Positioned concentrically thereto, is the outlet tube for the consumed gas.
  • the inlet 9 protrudes somewhat further into the interior of the reaction vessel than the outlet line 10, which surrounds the former in concentrical relation and is located exactly between the two tubular carriers 3.
  • the fresh reaction gas must be admitted, in this device, with an appropriately high pressure so that a defined jet forms in the reaction chamber.
  • Precipitation is effected in the usual manner.
  • the current conducting parts must be in mutual electrical insulation, via a suitable insulating layer.
  • a bottom plate I is also provided as well as a quartz bell 2 which is hermetically connected therewith and which together form the reaction chamber.
  • a system of electric leads 13 and 14 in mutual concentric position and in hermetic and mutual electrical insulation, are led through the bottom 1.
  • the innermost electrode 13 is also tubularly shaped. Both electrodes are profiled at theirupper front faces, in the interior of the reaction vessel. With the aid of this profiling and of an appropriate profiling (opposite to the first) at the low front faces of both graphite carriers 15 and 16, the latter are seated upon carbon electrodes 13 and 14.
  • the coolant not only flows in the space between the carriers 15 and 16 but also via openings 17 in the interior of the carrier 15.
  • the inner tubular carrier 15 continues directly into the outlet for the coolant, defined by the interior of the tubular electrode 13.
  • the wall of the interior carrier is provided with opening 17, which constitutes a continuous connection to the space between both carriers and 16.
  • the inner space is provided with fresh coolant by two or more inlets 8, arranged in symmetry to the interior carrier 15.
  • the coolant at inlet 8 enters the system of both carriers 15 and 16 and emerges therefrom at location 10.
  • the reaction gases enter at 9 and the waste gases exit at 20.
  • both carriers 15 and 16 are fitted into appropriate recesses of the bridge 18 which connects them.
  • This bridge 18 is disc-shaped and closes the interior of the inner carrier 15, as well as the intermediate space formed between both carriers 15 and 16 to the actual reaction chamber outside the carrier 16 and against the reaction gas, located therein.
  • the carriers 3 and 16 be coated, but also the connecting bridges 6 and 18 of carrier 15 and the electrodes 4 consist of carbon, e.g. graphite. They are then affixed to each other via projections and depressions, as well as within their holders.
  • the tubular bodies which result from a sensible utilization of the device according to the invention function primarily as a processing vessel for the production of semiconductor structural components.
  • the tubes are equipped with semiconductor wafers which are then arranged in a second vessel, sealed to the outside.
  • the atmosphere required for the desired treatment is created.
  • the processing tube consisting of semiconductor material is heated, for example, inductively or by current passage.
  • the tube may serve as a source in a transport reaction. It delivers semiconductor material to a transporting gas known for this purpose so that a gaseous com- -pound results. This compound dissociates under the precipitation of the semiconductor at the surface of the somewhat cooler semiconductor wafers.
  • the tubes as a processing vessel for doping purposes is also of great importance. Due to an appropriately high doping of the tube which contains the semiconductor wafers to be doped, said dopant, preferably, evaporates during the respective heating and produces, in the interior of the tube, that is at the location of the semiconductor wafers to be doped, the desired doping atmosphere.
  • a device for producing tubular bodies of semiconductor material comprising a reaction chamber, within said reaction chamber are at least two vertical tubular carbon carriers each held at their lower ends by an electrode and connected at their upper ends by a conductive bridge, the interior of said tubular carriers serving as a flow through channel for a flowing coolant, and means for introducing reaction gas capable of precipitating the semiconductor into said reaction chamber, and means for heating the carrier, whereby the outer surface of at least one carrier is coated with a layer of the semiconductor by reaction of said reaction gas at said carrier, this semiconductor layer, following the re moval of the carrier, defines the desired semiconductor tube.
  • tubular concentric carriers are held by electrodes formed by concentric tubes and are heatable by current flowing via said electrodes and the interconnecting bridge.

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
US00113286A 1970-10-12 1971-02-08 Device for producing tubular bodies of semiconductor material, preferably silicon or germanium Expired - Lifetime US3746496A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2050076A DE2050076C3 (de) 1970-10-12 1970-10-12 Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial

Publications (1)

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US3746496A true US3746496A (en) 1973-07-17

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US (1) US3746496A (cs)
JP (1) JPS491393B1 (cs)
BE (1) BE768301A (cs)
CA (1) CA959382A (cs)
CH (1) CH528301A (cs)
CS (1) CS188118B2 (cs)
DE (1) DE2050076C3 (cs)
DK (1) DK133604C (cs)
FR (1) FR2111084A5 (cs)
GB (1) GB1347368A (cs)
NL (1) NL7111264A (cs)
SE (1) SE367443B (cs)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
US3962391A (en) * 1973-05-07 1976-06-08 Siemens Aktiengesellschaft Disc support structure and method of producing the same
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4015922A (en) * 1970-12-09 1977-04-05 Siemens Aktiengesellschaft Apparatus for the manufacture of tubular bodies of semiconductor material
US4023520A (en) * 1975-04-28 1977-05-17 Siemens Aktiengesellschaft Reaction container for deposition of elemental silicon
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US20070251455A1 (en) * 2006-04-28 2007-11-01 Gt Equipment Technologies, Inc. Increased polysilicon deposition in a CVD reactor
US20090165704A1 (en) * 2007-12-28 2009-07-02 Mitsubishi Materials Corporation Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon
US20110129621A1 (en) * 2008-03-26 2011-06-02 Gt Solar, Incorporated Systems and methods for distributing gas in a chemical vapor deposition reactor
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
US20110203101A1 (en) * 2008-06-23 2011-08-25 Gt Solar Incorporated Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor
US20120171845A1 (en) * 2011-01-03 2012-07-05 Gt Solar Incorporated Chuck for chemical vapor deposition systems and related methods therefor
CN103158200A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种c形硅芯的搭接方法
CN103158202A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种空心硅芯的搭接方法
CN103158201A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种空心硅芯与实心硅芯的搭接方法
US20150211111A1 (en) * 2014-01-29 2015-07-30 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US11592169B2 (en) * 2018-10-01 2023-02-28 Flowil International Lighting (Holding) B.V. Linear LED light source and manufacturing method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58177460U (ja) * 1982-05-19 1983-11-28 後藤　定三 カラ−錠前
JP2725081B2 (ja) * 1990-07-05 1998-03-09 富士通株式会社 半導体装置製造用熱処理装置
US6228297B1 (en) * 1998-05-05 2001-05-08 Rohm And Haas Company Method for producing free-standing silicon carbide articles

Citations (5)

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US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
US3058812A (en) * 1958-05-29 1962-10-16 Westinghouse Electric Corp Process and apparatus for producing silicon
US3134695A (en) * 1958-12-09 1964-05-26 Siemens Ag Apparatus for producing rod-shaped semiconductor bodies
US3139363A (en) * 1960-01-04 1964-06-30 Texas Instruments Inc Method of making a silicon article by use of a removable core of tantalum
US3286685A (en) * 1961-01-26 1966-11-22 Siemens Ag Process and apparatus for pyrolytic production of pure semiconductor material, preferably silicon

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
US3058812A (en) * 1958-05-29 1962-10-16 Westinghouse Electric Corp Process and apparatus for producing silicon
US3134695A (en) * 1958-12-09 1964-05-26 Siemens Ag Apparatus for producing rod-shaped semiconductor bodies
US3139363A (en) * 1960-01-04 1964-06-30 Texas Instruments Inc Method of making a silicon article by use of a removable core of tantalum
US3286685A (en) * 1961-01-26 1966-11-22 Siemens Ag Process and apparatus for pyrolytic production of pure semiconductor material, preferably silicon

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4015922A (en) * 1970-12-09 1977-04-05 Siemens Aktiengesellschaft Apparatus for the manufacture of tubular bodies of semiconductor material
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US3962391A (en) * 1973-05-07 1976-06-08 Siemens Aktiengesellschaft Disc support structure and method of producing the same
US4023520A (en) * 1975-04-28 1977-05-17 Siemens Aktiengesellschaft Reaction container for deposition of elemental silicon
US20070251455A1 (en) * 2006-04-28 2007-11-01 Gt Equipment Technologies, Inc. Increased polysilicon deposition in a CVD reactor
US9683286B2 (en) 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
US20090165704A1 (en) * 2007-12-28 2009-07-02 Mitsubishi Materials Corporation Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon
EP2075233A3 (en) * 2007-12-28 2009-07-29 Mitsubishi Materials Corporation Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon
KR101529732B1 (ko) * 2007-12-28 2015-06-17 미쓰비시 마테리알 가부시키가이샤 다결정 실리콘의 실리콘 시드 로드 조립체 및 그 제조 방법, 다결정 실리콘 제조 장치, 다결정 실리콘 제조 방법
US9090962B2 (en) * 2007-12-28 2015-07-28 Mitsubishi Materials Corporation Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon
US20130224401A1 (en) * 2007-12-28 2013-08-29 Mitsubishi Materials Corporation Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon
CN101469447B (zh) * 2007-12-28 2013-04-24 三菱麻铁里亚尔株式会社 多结晶硅的硅籽晶杆组装体及其制造方法、多结晶硅制造装置和多结晶硅制造方法
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
US8961689B2 (en) * 2008-03-26 2015-02-24 Gtat Corporation Systems and methods for distributing gas in a chemical vapor deposition reactor
US20110129621A1 (en) * 2008-03-26 2011-06-02 Gt Solar, Incorporated Systems and methods for distributing gas in a chemical vapor deposition reactor
US20110203101A1 (en) * 2008-06-23 2011-08-25 Gt Solar Incorporated Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
US20120171845A1 (en) * 2011-01-03 2012-07-05 Gt Solar Incorporated Chuck for chemical vapor deposition systems and related methods therefor
CN103158200A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种c形硅芯的搭接方法
CN103158201B (zh) * 2011-12-09 2016-03-02 洛阳金诺机械工程有限公司 一种空心硅芯与实心硅芯的搭接方法
CN103158202B (zh) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 一种空心硅芯的搭接方法
CN103158200B (zh) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 一种c形硅芯的搭接方法
CN103158201A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种空心硅芯与实心硅芯的搭接方法
CN103158202A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种空心硅芯的搭接方法
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US20150211111A1 (en) * 2014-01-29 2015-07-30 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
US10450649B2 (en) * 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
US11592169B2 (en) * 2018-10-01 2023-02-28 Flowil International Lighting (Holding) B.V. Linear LED light source and manufacturing method

Also Published As

Publication number Publication date
CA959382A (en) 1974-12-17
SU430532A3 (ru) 1974-05-30
BE768301A (fr) 1971-11-03
NL7111264A (cs) 1972-04-14
CS188118B2 (en) 1979-02-28
DK133604C (da) 1976-11-01
DE2050076C3 (de) 1980-06-26
FR2111084A5 (cs) 1972-06-02
SE367443B (cs) 1974-05-27
CH528301A (de) 1972-09-30
JPS491393B1 (cs) 1974-01-12
DE2050076B2 (de) 1979-07-26
DE2050076A1 (de) 1972-04-13
DK133604B (da) 1976-06-14
GB1347368A (en) 1974-02-27

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