US3686378A - Improved separation of the deposition mandrel from a vapor phase deposited semiconductor body - Google Patents

Improved separation of the deposition mandrel from a vapor phase deposited semiconductor body Download PDF

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Publication number
US3686378A
US3686378A US58458A US3686378DA US3686378A US 3686378 A US3686378 A US 3686378A US 58458 A US58458 A US 58458A US 3686378D A US3686378D A US 3686378DA US 3686378 A US3686378 A US 3686378A
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carrier
semiconductor material
precipitation
semiconductor
cracks
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US58458A
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English (en)
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Wolfgang Dietze
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/073—Hollow body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Definitions

  • Tick ABSTRACT An at least unilaterally open, hollow body of semiconductor material, such as a tubular or cup-shaped body for example, is produced by precipitating the semiconductor material from a gaseous phase upon a heatable carrier consisting of a different material whose thermal coefficient of expansion is greater than that of the semiconductor material. During the process the carrier is heated to a temperature at which the difference in thermal expansion causes fissures or cracks to appear in the precipitated semiconductor material. Thereafter the precipitation of semiconductor materia1 is continued until the cracks are closed by the further growth of precipitating semiconductor material. Ultimately the carrier is removed by pulling or dropping it out of the resulting cooled semiconductor body.
  • My invention relates to producing an at least unilaterally open, hollow body of semiconductor material by precipitating the semiconductor material from a gaseous compound or phase of the material upon a heatable carrier structure consisting of a different material, and removing the carrier upon precipitation of a sufficiently thick layer of semiconductor material.
  • the semiconductor body thus produced may have an annular or tubular shape open at both sides, or it may consist of a unilaterally closed-tubular or cup-shaped structure.
  • FIG. 1 a tubular body 1 of silicon or other semiconductor material shown in perspective
  • FIG. 2 shows in cross .sectionan example of a cup-shaped body or crucible boat made of such a material.
  • a method of this type proposed previously requires removing the carrier structure from the hollow semiconductor body produced thereupon, by burning the carrier out of the body.
  • Another object subsidiary to the one just mentioned is to enable the removal of the carrier structure from the precipitated hollow semiconductor body without destruction or damage to the carrier structure so that it remains applicable for performing one or more further precipitation processes.
  • the carrier preferably is made of graphite or the like industrial carbon material.
  • I first heat the carrier to the processing temperature required or advantageous for the precipitation of the semiconductor material from the gasous phase until the precipitated layer has reached a given thickness at which the semiconductor body remains sufficiently self-supporting and coherent despite the subsequent formation of fissures or cracks. I then temporarily raise the temperature of the carrier above that employed during the precipitation stage with the result of causing the cracks. Thereafter I again reduce the temperature of the carrier to the one employed during the first precipitation stage, thus causing a further growth of semiconductor material upon the previously precipitated semiconductor layer to make the cracks grow closed.
  • the method according to the invention is performed by mounting a carrier, for example a rod or other structure of graphite, in a hermetically closed reaction vessel and then heating the carrier within the vessel while simultaneously passing a gaseous compound of the semiconductor material into the vessel.
  • a carrier for example a rod or other structure of graphite
  • the process and the processing equipment need not differ from the processes and equipment known for the production of electronic silicon material, described for example in the U.S. Pat. No. 2,999,735 of Reuschel, U.S. Pat. No. 3,146,123 of Bischoff, and U.S. Pat. No. 3,042,494 of Gutsche.
  • FIGS. 1 and 2 show a tubular body 1 and a cupshaped body 2, respectively, as described above, and
  • FIG.. 3 illustrates schematically and partly in section a tubular body I of silicon precipitated upon a rodshaped cylindrical carrier 3 of graphite.
  • the carrier 3 is clamped at both ends and is heated by passing electric current longitudinally through the carrier.
  • the heating may also be effected by electric induction heating which is preferably applied for heating the carrier used in the production of a cup-shaped or other unilaterally closed semiconductor body such as the one exemplified in FIG. 2.
  • the gaseous phase to be passed into the reaction vessel may consist, for example, of SiHCl mixed with molecular hydrogen H
  • the carrier of graphite is heated to the precipitation temperature, for example about l,O50 C to about 1,200 C
  • the introduction of the gaseous mixture into the reaction vessel causes crystalline silicon to precipitate upon the carrier.
  • This pyrolytic precipitation and deposition process is continued until a desired layer thickness of the semiconductor material is attained, this thickness being dependent upon the dimensions of the hollow semiconductor body to be produced.
  • the precipitation can be interrupted when a wall thickness of about 1 mm is attained. Then the carrier is heated to a higher temperature. This has the consequence that the carrier structure of graphite expands more than the precipitated layer of silicon due to the fact that the thermal coefficient of expansion of graphite is greater than that of silicon. The difference in expansion causes the silicon layer to crack.
  • the temperature increase during this stage of the process is so chosen that the silicon layer will not completely crack away from the carrier. It has been found advantageous, referring to a tubular semiconductor body of the above-mentioned dimensions, to apply a temperature increase of about 50 to about C. Such a temperature increase has the effect that the inner diameter of the precipitated layer of silicon will slightly widen but the silicon layer will remain a coherent entity.
  • the temperature of the carrier structure can. be reduced to a value which may be the minimum at which a further precipitation of crystalline silicon will just remain possible, or the temperature may be maintained at the increased value at which the fissures or cracks have formed in the semiconductor material. Subsequently an additional quantity of crystalline silicon is precipitated until the cracks grow closed.
  • the precipitation process need not necessarily be interrupted during the stage of increased temperature.
  • the process rather can also be performed so that further silicon will'precipitate during the interval of increased temperature.
  • the precipitation process is terminated and the carrier-structure together with the precipitated layer of silicon is permitted to cool. Thereafter the carrier structure can be removed from the tubular or other semiconductor body simply by letting the carrier drop out of the opening of the semiconductor body. Due to its weight and somewhat smaller diameter, the carrier structure will readily slide out of the tubular body and can again be used for the production of another semiconductor body.
  • the method of producing an at least unilaterally open hollow body of silicon which comprises precipitating a layer of silicon from a gaseous compound thereof onto a graphite carrier, the precipitation temperature being in the range from about 1,050C to about l,200C, heating the carrier upon precipitation of the layer of semiconductor material to a temperature of about 50C to about C above the precipitation temperature, whereby cracks occur'in the layer of precipitated semiconductor material, then continuing the precipitation of semiconductor material until the cracks are eliminated by further growth of precipitated semiconductor material, cooling the carrier and pulling the carrier from the resulting hollow semiconductor body without destroying said hollow semiconductor body.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Silicon Compounds (AREA)
US58458A 1969-08-26 1970-07-27 Improved separation of the deposition mandrel from a vapor phase deposited semiconductor body Expired - Lifetime US3686378A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691943359 DE1943359A1 (de) 1969-08-26 1969-08-26 Verfahren zum Herstellen eines mindestens einseitig offenen Hohlkoerpers aus Halbleitermaterial

Publications (1)

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US3686378A true US3686378A (en) 1972-08-22

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US58458A Expired - Lifetime US3686378A (en) 1969-08-26 1970-07-27 Improved separation of the deposition mandrel from a vapor phase deposited semiconductor body

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US (1) US3686378A (enrdf_load_stackoverflow)
JP (1) JPS4819792B1 (enrdf_load_stackoverflow)
AT (1) AT308830B (enrdf_load_stackoverflow)
CH (1) CH508418A (enrdf_load_stackoverflow)
DE (1) DE1943359A1 (enrdf_load_stackoverflow)
FR (1) FR2059682B1 (enrdf_load_stackoverflow)
GB (1) GB1273097A (enrdf_load_stackoverflow)
NL (1) NL7010647A (enrdf_load_stackoverflow)
SE (1) SE351320B (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3853974A (en) * 1970-04-06 1974-12-10 Siemens Ag Method of producing a hollow body of semiconductor material
US3867497A (en) * 1972-03-28 1975-02-18 Wacker Chemitronic Process of making hollow bodies or tubes of semi-conducting materials
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
US3961003A (en) * 1972-05-17 1976-06-01 Dow Corning Corporation Method and apparatus for making elongated Si and SiC structures
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4062714A (en) * 1975-09-16 1977-12-13 Wacker-Chemitronic Gesellschaft Fur Elektronik Grundstoffe Mbh Process for making hollow silicon bodies and bodies utilizing board-shaped members to form the basic geometric shape so made
US4117802A (en) * 1976-09-09 1978-10-03 Compagnie Generale D'electricite Method and device for depositing a layer of glass on the inner wall of a tube
US4238436A (en) * 1979-05-10 1980-12-09 General Instrument Corporation Method of obtaining polycrystalline silicon
US4332751A (en) * 1980-03-13 1982-06-01 The United States Of America As Represented By The United States Department Of Energy Method for fabricating thin films of pyrolytic carbon
US4550014A (en) * 1982-09-09 1985-10-29 The United States Of America As Represented By The United States Department Of Energy Method for production of free-standing polycrystalline boron phosphide film
US6581415B2 (en) 2001-01-31 2003-06-24 G.T. Equipment Technologies, Inc. Method of producing shaped bodies of semiconductor materials
US20070248521A1 (en) * 2006-04-13 2007-10-25 Cabot Corporation Production of silicon through a closed-loop process

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2974388A (en) * 1958-01-30 1961-03-14 Norton Co Process of making ceramic shells
US3139363A (en) * 1960-01-04 1964-06-30 Texas Instruments Inc Method of making a silicon article by use of a removable core of tantalum
US3477885A (en) * 1965-03-26 1969-11-11 Siemens Ag Method for producing a structure composed of mutually insulated semiconductor regions for integrated circuits
US3576932A (en) * 1969-02-17 1971-04-27 Texas Instruments Inc Sintering vapor deposited silica on a mandrel designed to reduce shrinkage

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2974388A (en) * 1958-01-30 1961-03-14 Norton Co Process of making ceramic shells
US3139363A (en) * 1960-01-04 1964-06-30 Texas Instruments Inc Method of making a silicon article by use of a removable core of tantalum
US3477885A (en) * 1965-03-26 1969-11-11 Siemens Ag Method for producing a structure composed of mutually insulated semiconductor regions for integrated circuits
US3576932A (en) * 1969-02-17 1971-04-27 Texas Instruments Inc Sintering vapor deposited silica on a mandrel designed to reduce shrinkage

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
US3853974A (en) * 1970-04-06 1974-12-10 Siemens Ag Method of producing a hollow body of semiconductor material
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US3867497A (en) * 1972-03-28 1975-02-18 Wacker Chemitronic Process of making hollow bodies or tubes of semi-conducting materials
US3961003A (en) * 1972-05-17 1976-06-01 Dow Corning Corporation Method and apparatus for making elongated Si and SiC structures
US4062714A (en) * 1975-09-16 1977-12-13 Wacker-Chemitronic Gesellschaft Fur Elektronik Grundstoffe Mbh Process for making hollow silicon bodies and bodies utilizing board-shaped members to form the basic geometric shape so made
US4117802A (en) * 1976-09-09 1978-10-03 Compagnie Generale D'electricite Method and device for depositing a layer of glass on the inner wall of a tube
US4238436A (en) * 1979-05-10 1980-12-09 General Instrument Corporation Method of obtaining polycrystalline silicon
US4332751A (en) * 1980-03-13 1982-06-01 The United States Of America As Represented By The United States Department Of Energy Method for fabricating thin films of pyrolytic carbon
US4550014A (en) * 1982-09-09 1985-10-29 The United States Of America As Represented By The United States Department Of Energy Method for production of free-standing polycrystalline boron phosphide film
US6581415B2 (en) 2001-01-31 2003-06-24 G.T. Equipment Technologies, Inc. Method of producing shaped bodies of semiconductor materials
US20070248521A1 (en) * 2006-04-13 2007-10-25 Cabot Corporation Production of silicon through a closed-loop process
US7780938B2 (en) 2006-04-13 2010-08-24 Cabot Corporation Production of silicon through a closed-loop process

Also Published As

Publication number Publication date
AT308830B (de) 1973-07-25
SE351320B (enrdf_load_stackoverflow) 1972-11-20
FR2059682A1 (enrdf_load_stackoverflow) 1971-06-04
JPS4819792B1 (enrdf_load_stackoverflow) 1973-06-15
DE1943359A1 (de) 1971-03-04
NL7010647A (enrdf_load_stackoverflow) 1971-03-02
CH508418A (de) 1971-06-15
GB1273097A (en) 1972-05-03
FR2059682B1 (enrdf_load_stackoverflow) 1974-07-12

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