NL7010647A - - Google Patents

Info

Publication number
NL7010647A
NL7010647A NL7010647A NL7010647A NL7010647A NL 7010647 A NL7010647 A NL 7010647A NL 7010647 A NL7010647 A NL 7010647A NL 7010647 A NL7010647 A NL 7010647A NL 7010647 A NL7010647 A NL 7010647A
Authority
NL
Netherlands
Application number
NL7010647A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7010647A publication Critical patent/NL7010647A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/073—Hollow body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Silicon Compounds (AREA)
NL7010647A 1969-08-26 1970-07-17 NL7010647A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691943359 DE1943359A1 (de) 1969-08-26 1969-08-26 Verfahren zum Herstellen eines mindestens einseitig offenen Hohlkoerpers aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
NL7010647A true NL7010647A (enrdf_load_stackoverflow) 1971-03-02

Family

ID=5743825

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7010647A NL7010647A (enrdf_load_stackoverflow) 1969-08-26 1970-07-17

Country Status (9)

Country Link
US (1) US3686378A (enrdf_load_stackoverflow)
JP (1) JPS4819792B1 (enrdf_load_stackoverflow)
AT (1) AT308830B (enrdf_load_stackoverflow)
CH (1) CH508418A (enrdf_load_stackoverflow)
DE (1) DE1943359A1 (enrdf_load_stackoverflow)
FR (1) FR2059682B1 (enrdf_load_stackoverflow)
GB (1) GB1273097A (enrdf_load_stackoverflow)
NL (1) NL7010647A (enrdf_load_stackoverflow)
SE (1) SE351320B (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
US3853974A (en) * 1970-04-06 1974-12-10 Siemens Ag Method of producing a hollow body of semiconductor material
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
NL7304259A (enrdf_load_stackoverflow) * 1972-03-28 1973-10-02
US3961003A (en) * 1972-05-17 1976-06-01 Dow Corning Corporation Method and apparatus for making elongated Si and SiC structures
DE2541215C3 (de) * 1975-09-16 1978-08-03 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Herstellung von Siliciumhohlkörpern
FR2364186A1 (fr) * 1976-09-09 1978-04-07 Comp Generale Electricite Procede et dispositif pour deposer une couche d'un verre sur la paroi interne d'un tube
US4238436A (en) * 1979-05-10 1980-12-09 General Instrument Corporation Method of obtaining polycrystalline silicon
US4332751A (en) * 1980-03-13 1982-06-01 The United States Of America As Represented By The United States Department Of Energy Method for fabricating thin films of pyrolytic carbon
US4550014A (en) * 1982-09-09 1985-10-29 The United States Of America As Represented By The United States Department Of Energy Method for production of free-standing polycrystalline boron phosphide film
WO2002060620A1 (en) 2001-01-31 2002-08-08 G.T. Equipment Technologies Inc. Method of producing shaped bodies of semiconductor materials
WO2007120871A2 (en) * 2006-04-13 2007-10-25 Cabot Corporation Production of silicon through a closed-loop process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2974388A (en) * 1958-01-30 1961-03-14 Norton Co Process of making ceramic shells
GB944009A (en) * 1960-01-04 1963-12-11 Texas Instruments Ltd Improvements in or relating to the deposition of silicon on a tantalum article
DE1230915B (de) * 1965-03-26 1966-12-22 Siemens Ag Verfahren zum Herstellen von integrierten Halbleiterbauelementen
US3576932A (en) * 1969-02-17 1971-04-27 Texas Instruments Inc Sintering vapor deposited silica on a mandrel designed to reduce shrinkage

Also Published As

Publication number Publication date
GB1273097A (en) 1972-05-03
FR2059682B1 (enrdf_load_stackoverflow) 1974-07-12
JPS4819792B1 (enrdf_load_stackoverflow) 1973-06-15
SE351320B (enrdf_load_stackoverflow) 1972-11-20
AT308830B (de) 1973-07-25
FR2059682A1 (enrdf_load_stackoverflow) 1971-06-04
CH508418A (de) 1971-06-15
US3686378A (en) 1972-08-22
DE1943359A1 (de) 1971-03-04

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