US3670217A - Thyristor with a control device and having several control electrodes - Google Patents

Thyristor with a control device and having several control electrodes Download PDF

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Publication number
US3670217A
US3670217A US63911A US3670217DA US3670217A US 3670217 A US3670217 A US 3670217A US 63911 A US63911 A US 63911A US 3670217D A US3670217D A US 3670217DA US 3670217 A US3670217 A US 3670217A
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United States
Prior art keywords
thyristor
control device
electrodes
base layer
capacitor
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Expired - Lifetime
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US63911A
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English (en)
Inventor
Carl Ingvar Boksjo
Bengt Allan Sehman
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ABB Norden Holding AB
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ASEA AB
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Definitions

  • ABSTRACT A thyristor has a control device connected between a base layer and an emitter layer.
  • the base layer is provided with a plurality of connecting electrodes one at the center and several around the periphery.
  • a control device is connected to the central electrode while a capacitor is connected between the emitter electrode and the peripheral electrodes.
  • the present invention relates to a thyristor provided with a control device which is connected between a base layer and an emitter layer, the base layer of which is provided with at least two electrodes.
  • a control device For a thyristor it is convenient to use a control device with a relatively great resistance in order to limit the control power as much as possible.
  • a control device usually comprises a bias voltage source giving an inverse voltage to the controlling junction in the thyristor. This inverse voltage prevents the thyristor from self-igniting during a blocking interval.
  • the control device With rapidly increasing blocking voltages it is on the other hand desirable that the control device have a low-ohmic current path to prevent the voltage over the control device and over the controlling junction from increasing so much that the thyristo'r self-ignites. Therefore it seems suitable to parallelconnect the control device with a capacitor as shown in FIG. 1.
  • such a solution would mean a leveling of the front of the control pulses, whereby the ignition of the thyristor becomes uncertain and the ignition time undefined.
  • a thyristor connection according to the invention is characterized in that the control device is connected to one of said electrodes of said base layer, while a capacitor is connected between said emitter layer and another of said base layer electrodes. Due to this, the control device and the capacitor are parallel-connected to each other, but simultaneously separated from each other by that part of the base layer situated between their connections. Normally, the resistance in this base layer in the lateral direction is so great that the control pulses meet with a resistance which may be represented by a great resistance in series with the capacitor so that the latter only involves a rather small load for the control device.
  • the control device is suitably connected to a central electrode in the base layer, while the capacitor is connected to one or several peripheral electrodes on the base layer.
  • FIG. 1 shows a PNPN-thyristor 1 provided with a control device 2 and which is connected between the P-base layer and the N-emitter layer.
  • the control device comprises a bias voltage source 3 which keeps the N-ernitter layer positive in relation to the P-base layer during the reverse and forward blocking intervals.
  • the capacitor 4 has been connected in parallel with the control device 2 which capacitor will absorb a rapidly increasing voltage across the control device.
  • the capacitor 4 will have the same effect on the pulses from the control device, and, as it is changed from the bias voltage source 3 during the reverse and forward blocking intervals of the thyristor, the capacitor first has to be recharged by the control pulses before the thyristor is able to ignite. Such an operation will give a great and indefinite delay of the ignition of the thyristor.
  • FIGS. 3 and 4 is shown a more practical form of the thyristor.
  • FIG. 3 shows the thyristor seen from the top
  • FIG. 4 shows a perspective view of the thyristor.
  • the P- base layer of the thyristor is provided with a central electrode 11, while a main electrode 12 is connected to the N-emitter layer and between these two electrodes the control device 2 is connected.
  • the capacitor 4, however, is connected between the electrode 12 on the N-emitter and three peripheral electrodes 13 on the P-base layer.
  • a good connection of the capacitor 4 to the P-base layer is achieved and at the same time the longest possible current path between the control device and the capacitor connections is obtained with the help of the central electrode 1 1.
  • Thyristor assembly comprising a thyristor, a control device and a voltage limiting capacitor, said thyristor being provided with an anode electrode, a cathode electrode and at least first and second control electrodes, said control electrodes being arranged on a base layer of said thyristor, said control device being connected directly between said cathode electrode and the first of said control electrodes, and said voltage limiting capacitor being connected between said cathode electrode and the second of said control electrodes.
  • Thyristor assembly as claimed in claim 1, in which said first electrode is a central electrode and said second electrode is a peripheral electrode.
  • Thyristor according to claim 2 wherein said base layer is provided with a plurality of peripheral electrodes, and said capacitor is connected to all said peripheral electrodes.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)
US63911A 1967-03-16 1970-08-14 Thyristor with a control device and having several control electrodes Expired - Lifetime US3670217A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE03639/67A SE338363B (fr) 1967-03-16 1967-03-16

Publications (1)

Publication Number Publication Date
US3670217A true US3670217A (en) 1972-06-13

Family

ID=20262540

Family Applications (1)

Application Number Title Priority Date Filing Date
US63911A Expired - Lifetime US3670217A (en) 1967-03-16 1970-08-14 Thyristor with a control device and having several control electrodes

Country Status (6)

Country Link
US (1) US3670217A (fr)
CH (1) CH472804A (fr)
DE (1) DE1639192B1 (fr)
FR (1) FR1556114A (fr)
GB (1) GB1208794A (fr)
SE (1) SE338363B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990090A (en) * 1973-04-18 1976-11-02 Hitachi, Ltd. Semiconductor controlled rectifier
US4231054A (en) * 1978-06-15 1980-10-28 Bbc Brown, Boveri & Company, Limited Thyristor with starting and generating cathode base contacts for use in rectifier circuits

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2870345A (en) * 1954-02-02 1959-01-20 Philips Corp Amplification control of a transistor
US3097335A (en) * 1959-10-14 1963-07-09 Siemens Ag Electric current inverter
DE1156508B (de) * 1959-09-30 1963-10-31 Siemens Ag Steuerbares und schaltendes Vierschichthalbleiterbauelement
US3222548A (en) * 1963-09-30 1965-12-07 Richard J Sanford Rf protection circuit
US3364440A (en) * 1965-03-31 1968-01-16 Texas Instruments Inc Inverter circuits
US3381186A (en) * 1964-03-21 1968-04-30 Licentia Gmbh Balanced multiple contact control electrode
US3428874A (en) * 1965-05-14 1969-02-18 Licentia Gmbh Controllable semiconductor rectifier unit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1138100B (de) * 1960-09-09 1962-10-18 Siemens Ag Schutzschaltung fuer eine P-N-P-N-Schaltdiode

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2870345A (en) * 1954-02-02 1959-01-20 Philips Corp Amplification control of a transistor
DE1156508B (de) * 1959-09-30 1963-10-31 Siemens Ag Steuerbares und schaltendes Vierschichthalbleiterbauelement
US3097335A (en) * 1959-10-14 1963-07-09 Siemens Ag Electric current inverter
US3222548A (en) * 1963-09-30 1965-12-07 Richard J Sanford Rf protection circuit
US3381186A (en) * 1964-03-21 1968-04-30 Licentia Gmbh Balanced multiple contact control electrode
US3364440A (en) * 1965-03-31 1968-01-16 Texas Instruments Inc Inverter circuits
US3428874A (en) * 1965-05-14 1969-02-18 Licentia Gmbh Controllable semiconductor rectifier unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990090A (en) * 1973-04-18 1976-11-02 Hitachi, Ltd. Semiconductor controlled rectifier
US4231054A (en) * 1978-06-15 1980-10-28 Bbc Brown, Boveri & Company, Limited Thyristor with starting and generating cathode base contacts for use in rectifier circuits

Also Published As

Publication number Publication date
GB1208794A (en) 1970-10-14
CH472804A (de) 1969-05-15
SE338363B (fr) 1971-09-06
FR1556114A (fr) 1969-01-31
DE1639192B1 (de) 1970-10-29

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