US3670217A - Thyristor with a control device and having several control electrodes - Google Patents

Thyristor with a control device and having several control electrodes Download PDF

Info

Publication number
US3670217A
US3670217A US63911A US3670217DA US3670217A US 3670217 A US3670217 A US 3670217A US 63911 A US63911 A US 63911A US 3670217D A US3670217D A US 3670217DA US 3670217 A US3670217 A US 3670217A
Authority
US
United States
Prior art keywords
thyristor
control device
electrodes
base layer
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US63911A
Inventor
Carl Ingvar Boksjo
Bengt Allan Sehman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Norden Holding AB
Original Assignee
ASEA AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASEA AB filed Critical ASEA AB
Application granted granted Critical
Publication of US3670217A publication Critical patent/US3670217A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Definitions

  • ABSTRACT A thyristor has a control device connected between a base layer and an emitter layer.
  • the base layer is provided with a plurality of connecting electrodes one at the center and several around the periphery.
  • a control device is connected to the central electrode while a capacitor is connected between the emitter electrode and the peripheral electrodes.
  • the present invention relates to a thyristor provided with a control device which is connected between a base layer and an emitter layer, the base layer of which is provided with at least two electrodes.
  • a control device For a thyristor it is convenient to use a control device with a relatively great resistance in order to limit the control power as much as possible.
  • a control device usually comprises a bias voltage source giving an inverse voltage to the controlling junction in the thyristor. This inverse voltage prevents the thyristor from self-igniting during a blocking interval.
  • the control device With rapidly increasing blocking voltages it is on the other hand desirable that the control device have a low-ohmic current path to prevent the voltage over the control device and over the controlling junction from increasing so much that the thyristo'r self-ignites. Therefore it seems suitable to parallelconnect the control device with a capacitor as shown in FIG. 1.
  • such a solution would mean a leveling of the front of the control pulses, whereby the ignition of the thyristor becomes uncertain and the ignition time undefined.
  • a thyristor connection according to the invention is characterized in that the control device is connected to one of said electrodes of said base layer, while a capacitor is connected between said emitter layer and another of said base layer electrodes. Due to this, the control device and the capacitor are parallel-connected to each other, but simultaneously separated from each other by that part of the base layer situated between their connections. Normally, the resistance in this base layer in the lateral direction is so great that the control pulses meet with a resistance which may be represented by a great resistance in series with the capacitor so that the latter only involves a rather small load for the control device.
  • the control device is suitably connected to a central electrode in the base layer, while the capacitor is connected to one or several peripheral electrodes on the base layer.
  • FIG. 1 shows a PNPN-thyristor 1 provided with a control device 2 and which is connected between the P-base layer and the N-emitter layer.
  • the control device comprises a bias voltage source 3 which keeps the N-ernitter layer positive in relation to the P-base layer during the reverse and forward blocking intervals.
  • the capacitor 4 has been connected in parallel with the control device 2 which capacitor will absorb a rapidly increasing voltage across the control device.
  • the capacitor 4 will have the same effect on the pulses from the control device, and, as it is changed from the bias voltage source 3 during the reverse and forward blocking intervals of the thyristor, the capacitor first has to be recharged by the control pulses before the thyristor is able to ignite. Such an operation will give a great and indefinite delay of the ignition of the thyristor.
  • FIGS. 3 and 4 is shown a more practical form of the thyristor.
  • FIG. 3 shows the thyristor seen from the top
  • FIG. 4 shows a perspective view of the thyristor.
  • the P- base layer of the thyristor is provided with a central electrode 11, while a main electrode 12 is connected to the N-emitter layer and between these two electrodes the control device 2 is connected.
  • the capacitor 4, however, is connected between the electrode 12 on the N-emitter and three peripheral electrodes 13 on the P-base layer.
  • a good connection of the capacitor 4 to the P-base layer is achieved and at the same time the longest possible current path between the control device and the capacitor connections is obtained with the help of the central electrode 1 1.
  • Thyristor assembly comprising a thyristor, a control device and a voltage limiting capacitor, said thyristor being provided with an anode electrode, a cathode electrode and at least first and second control electrodes, said control electrodes being arranged on a base layer of said thyristor, said control device being connected directly between said cathode electrode and the first of said control electrodes, and said voltage limiting capacitor being connected between said cathode electrode and the second of said control electrodes.
  • Thyristor assembly as claimed in claim 1, in which said first electrode is a central electrode and said second electrode is a peripheral electrode.
  • Thyristor according to claim 2 wherein said base layer is provided with a plurality of peripheral electrodes, and said capacitor is connected to all said peripheral electrodes.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)

Abstract

A thyristor has a control device connected between a base layer and an emitter layer. The base layer is provided with a plurality of connecting electrodes one at the center and several around the periphery. A control device is connected to the central electrode while a capacitor is connected between the emitter electrode and the peripheral electrodes.

Description

United States Patent Boksjo et al.
[ THYR ISTOR WITH A CONTROL DEVICE AND HAVING SEVERAL CONTROL ELECTRODES [72] Inventors: Carl lngvar Boksjo; Bengt Allan Sehman, both of Ludvika, Sweden [73] Assignee: Allmanna Svenskl Elektriskl Aktiebolaget,
Vasteras, Sweden [22] Filed: Aug. 14, 1970 [21] Appl. No.: 63,911
Related US. Application Data [63] Continuation of Ser. No. 712,770, March 13, 1968,
abandoned.
[30] Foreign Application Priority Data March 16, 1967 Sweden ..3639/67 [52] US. Cl. ....3l7/235 R, 307/252, 307/284,
307/305, 317/235 AA, 317/235 AB, 317/235 AJ [51] lnt.Cl. ..H0ll 11/00, H011 15/00 [58] Field ofSearch ..317/234, 235,4l,4l.l AJ; 307/252, 10, 20, 21, 23, 24, 22, 284, 287, 298, 305
[451 June 13, 1972 [56] References Cited UNITED STATES PATENTS 3,097,335 7/1963 Schmidt ..317/235 X 3,222,548 12/1965 Sanford ...307/305 X 3,364,440 l/l 968 Schreiner... ..331/1 1 1 3,381,186 4/1968 Arends ..3l7/235 3,428,874 2/1969 Gerlach ..317/235 2,870,345 l/ 1959 Van Overbeek ..3l7/235 FOREIGN PATENTS OR APPLICATIONS l,l56,508 10/1963 Germany ..307/305 Primary Examiner-John W. Huckert Assistant Examiner-Andrew J. James Attorney-Jennings Bailey, Jr.
[57] ABSTRACT A thyristor has a control device connected between a base layer and an emitter layer. The base layer is provided with a plurality of connecting electrodes one at the center and several around the periphery. A control device is connected to the central electrode while a capacitor is connected between the emitter electrode and the peripheral electrodes.
3 Claims, 4 Drawing Figures PA'TENTEDJum m2 7 3.670.217
Fz'g/ Fig.2
- INVEHTOR. CARL mevn R Bwx ST0 3842 ALL-AN H A 'II-IYRISTOR WITH A CONTROL DEVICE AND HAVING SEVERAL CONTROL ELECTRODES This application is a continuation of Ser. No. 712,770, filed Mar. I3, 1968, and now abandoned.
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thyristor provided with a control device which is connected between a base layer and an emitter layer, the base layer of which is provided with at least two electrodes. I
2. The Prior Art For a thyristor it is convenient to use a control device with a relatively great resistance in order to limit the control power as much as possible. Such a control device usually comprises a bias voltage source giving an inverse voltage to the controlling junction in the thyristor. This inverse voltage prevents the thyristor from self-igniting during a blocking interval. With rapidly increasing blocking voltages it is on the other hand desirable that the control device have a low-ohmic current path to prevent the voltage over the control device and over the controlling junction from increasing so much that the thyristo'r self-ignites. Therefore it seems suitable to parallelconnect the control device with a capacitor as shown in FIG. 1. However, such a solution would mean a leveling of the front of the control pulses, whereby the ignition of the thyristor becomes uncertain and the ignition time undefined.
Instead it is suggested, according to the invention, to use a thyristor where the respective base layer is provided with several electrodes, and a thyristor connection according to the invention is characterized in that the control device is connected to one of said electrodes of said base layer, while a capacitor is connected between said emitter layer and another of said base layer electrodes. Due to this, the control device and the capacitor are parallel-connected to each other, but simultaneously separated from each other by that part of the base layer situated between their connections. Normally, the resistance in this base layer in the lateral direction is so great that the control pulses meet with a resistance which may be represented by a great resistance in series with the capacitor so that the latter only involves a rather small load for the control device. To get a suitable distance between the connections for the capacitor and the control device and at the same time obtain favorable ignition conditions in the thyristor, the control device is suitably connected to a central electrode in the base layer, while the capacitor is connected to one or several peripheral electrodes on the base layer.
BRIEF DESCRIPTION OF THE DRAWINGS DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a PNPN-thyristor 1 provided with a control device 2 and which is connected between the P-base layer and the N-emitter layer.
The control device comprises a bias voltage source 3 which keeps the N-ernitter layer positive in relation to the P-base layer during the reverse and forward blocking intervals. To avoid a rapidly increasing blocking voltage across the control device and thus over the P-base layer and the N-emitter layer with a risk that the thyristor will self-ignite, the capacitor 4 has been connected in parallel with the control device 2 which capacitor will absorb a rapidly increasing voltage across the control device. However, the capacitor 4 will have the same effect on the pulses from the control device, and, as it is changed from the bias voltage source 3 during the reverse and forward blocking intervals of the thyristor, the capacitor first has to be recharged by the control pulses before the thyristor is able to ignite. Such an operation will give a great and indefinite delay of the ignition of the thyristor.
Instead It 15 suggested according to the invention to connect the capacitor 4 as shown in FIG. 2, where the control device 2 is connected to one point of the P-base layer, while the capacitor 4 is connected to another point of this base layer. During reverse and forward blocking intervals the bias voltage source 3 will charge the capacitor 4 with the shown polarity, thus securing a safe blocking of the junction between the P-base layer and the N-emitter layer. At that moment when the control device gives its ignition pulse, this will immediately introduce an ignition near to its connection point, whereby the ignition of the thyristor rapidly extends over the whole junction between the P-base and the emitter. Simultaneously a recharging current to the capacitor 4 will flow through the P- base layer in the lateral direction, but the resistance of the layer is then so great that the capacitor will not load the control device appreciably and thus the negative effect according to FIG. 1 is avoided.
In FIGS. 3 and 4 is shown a more practical form of the thyristor. Thus, FIG. 3 shows the thyristor seen from the top, while FIG. 4 shows a perspective view of the thyristor. The P- base layer of the thyristor is provided with a central electrode 11, while a main electrode 12 is connected to the N-emitter layer and between these two electrodes the control device 2 is connected. The capacitor 4, however, is connected between the electrode 12 on the N-emitter and three peripheral electrodes 13 on the P-base layer. Thus a good connection of the capacitor 4 to the P-base layer is achieved and at the same time the longest possible current path between the control device and the capacitor connections is obtained with the help of the central electrode 1 1.
We claim:
1. Thyristor assembly comprising a thyristor, a control device and a voltage limiting capacitor, said thyristor being provided with an anode electrode, a cathode electrode and at least first and second control electrodes, said control electrodes being arranged on a base layer of said thyristor, said control device being connected directly between said cathode electrode and the first of said control electrodes, and said voltage limiting capacitor being connected between said cathode electrode and the second of said control electrodes.
2. Thyristor assembly as claimed in claim 1, in which said first electrode is a central electrode and said second electrode is a peripheral electrode.
3. Thyristor according to claim 2, wherein said base layer is provided with a plurality of peripheral electrodes, and said capacitor is connected to all said peripheral electrodes.

Claims (3)

1. Thyristor assembly comprising a thyristor, a control device and a voltage limiting capacitor, said thyristor being provided with an anode electrode, a cathode electrode and at least first and second control electrodes, said control electrodes being arranged on a base layer of said thyristor, said control device being connected directly between said cathode electrode and the first of said control electrodes, and said voltage limiting capacitor being connected between said cathode electrode and the second of said control electrodes.
2. Thyristor assembly as claimed in claim 1, in which said first electrode is a central electrode and said second electrode is a peripheral electrode.
3. Thyristor according to claim 2, wherein said base layer is provided with a plurality of peripheral electrodes, and said capacitor is connected to all said peripheral electrodes.
US63911A 1967-03-16 1970-08-14 Thyristor with a control device and having several control electrodes Expired - Lifetime US3670217A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE03639/67A SE338363B (en) 1967-03-16 1967-03-16

Publications (1)

Publication Number Publication Date
US3670217A true US3670217A (en) 1972-06-13

Family

ID=20262540

Family Applications (1)

Application Number Title Priority Date Filing Date
US63911A Expired - Lifetime US3670217A (en) 1967-03-16 1970-08-14 Thyristor with a control device and having several control electrodes

Country Status (6)

Country Link
US (1) US3670217A (en)
CH (1) CH472804A (en)
DE (1) DE1639192B1 (en)
FR (1) FR1556114A (en)
GB (1) GB1208794A (en)
SE (1) SE338363B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990090A (en) * 1973-04-18 1976-11-02 Hitachi, Ltd. Semiconductor controlled rectifier
US4231054A (en) * 1978-06-15 1980-10-28 Bbc Brown, Boveri & Company, Limited Thyristor with starting and generating cathode base contacts for use in rectifier circuits

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2870345A (en) * 1954-02-02 1959-01-20 Philips Corp Amplification control of a transistor
US3097335A (en) * 1959-10-14 1963-07-09 Siemens Ag Electric current inverter
DE1156508B (en) * 1959-09-30 1963-10-31 Siemens Ag Controllable and switching four-layer semiconductor component
US3222548A (en) * 1963-09-30 1965-12-07 Richard J Sanford Rf protection circuit
US3364440A (en) * 1965-03-31 1968-01-16 Texas Instruments Inc Inverter circuits
US3381186A (en) * 1964-03-21 1968-04-30 Licentia Gmbh Balanced multiple contact control electrode
US3428874A (en) * 1965-05-14 1969-02-18 Licentia Gmbh Controllable semiconductor rectifier unit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1138100B (en) * 1960-09-09 1962-10-18 Siemens Ag Protection circuit for a P-N-P-N switching diode

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2870345A (en) * 1954-02-02 1959-01-20 Philips Corp Amplification control of a transistor
DE1156508B (en) * 1959-09-30 1963-10-31 Siemens Ag Controllable and switching four-layer semiconductor component
US3097335A (en) * 1959-10-14 1963-07-09 Siemens Ag Electric current inverter
US3222548A (en) * 1963-09-30 1965-12-07 Richard J Sanford Rf protection circuit
US3381186A (en) * 1964-03-21 1968-04-30 Licentia Gmbh Balanced multiple contact control electrode
US3364440A (en) * 1965-03-31 1968-01-16 Texas Instruments Inc Inverter circuits
US3428874A (en) * 1965-05-14 1969-02-18 Licentia Gmbh Controllable semiconductor rectifier unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990090A (en) * 1973-04-18 1976-11-02 Hitachi, Ltd. Semiconductor controlled rectifier
US4231054A (en) * 1978-06-15 1980-10-28 Bbc Brown, Boveri & Company, Limited Thyristor with starting and generating cathode base contacts for use in rectifier circuits

Also Published As

Publication number Publication date
GB1208794A (en) 1970-10-14
CH472804A (en) 1969-05-15
FR1556114A (en) 1969-01-31
SE338363B (en) 1971-09-06
DE1639192B1 (en) 1970-10-29

Similar Documents

Publication Publication Date Title
US3097335A (en) Electric current inverter
US3697833A (en) Light activated thyristor
US4092703A (en) Gate controlled semiconductor device
US3577046A (en) Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
US3566211A (en) Thyristor-type semiconductor device with auxiliary starting electrodes
JPS6019147B2 (en) gate turn off thyristor
US3526815A (en) Controllable semi-conductor devices comprising main and auxiliary thyristors having all except one emitter-layer in common
US3573572A (en) Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current
US3337783A (en) Shorted emitter controlled rectifier with improved turn-off gain
JPS5918576U (en) Thyristor overvoltage protection circuit
US3622845A (en) Scr with amplified emitter gate
US3670217A (en) Thyristor with a control device and having several control electrodes
JPS6135706B2 (en)
US3641404A (en) Thyristor circuit
US3409811A (en) Four-zone semiconductor rectifier with spaced regions in one outer zone
US4595939A (en) Radiation-controllable thyristor with multiple, non-concentric amplified stages
JPH06204462A (en) Thyristor and its assembly
US3261985A (en) Cross-current turn-off silicon controlled rectifier
US4296427A (en) Reverse conducting amplified gate thyristor with plate-like separator section
US3461319A (en) Secondary slave control for seriesconnected gate controlled switches
US3543105A (en) Switching means comprising a thyristor with controlled and bias electrodes
JPS5933871A (en) Reverse conductive type semiconductor device
JPH03225961A (en) Semiconductor element
JPS586312B2 (en) handmade seaweed
JPH0666464B2 (en) Bidirectional semiconductor switching element