US3659552A - Vapor deposition apparatus - Google Patents

Vapor deposition apparatus Download PDF

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Publication number
US3659552A
US3659552A US601885A US3659552DA US3659552A US 3659552 A US3659552 A US 3659552A US 601885 A US601885 A US 601885A US 3659552D A US3659552D A US 3659552DA US 3659552 A US3659552 A US 3659552A
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United States
Prior art keywords
drum
articles
slices
bell jar
principal axis
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Expired - Lifetime
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US601885A
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English (en)
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Thomas F Briody
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AT&T Corp
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Western Electric Co Inc
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Assigned to AT & T TECHNOLOGIES, INC., reassignment AT & T TECHNOLOGIES, INC., CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). EFFECTIVE JAN. 3,1984 Assignors: WESTERN ELECTRIC COMPANY, INCORPORATED
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • VAPOR DEPOSITION APPARATUS [72] Inventor: Thomas F. Briody, Bethlehem, Pa.
  • ABSTRACT -A vapor deposition apparatus includes a susceptor formed as an annulus about a vertical axis and having pockets on the inner, vertical wall adapted to support substrates therein. Means rotate the annulus at speeds to effect a centrifugal retaining force on substrates'so supported. Inductive heating means is provided.
  • This invention relates to apparatus for coating articles and, in particular, to apparatus for epitaxially depositing coatings of semiconductor material onto slices of such material. Accordingly, the general object of this invention is to provide new and improved apparatus of such character.
  • a carrier gas e.g., hydrogen
  • a halide of the semiconductor involved e.g., silicon tetrachloride
  • Hartman et al. provide epitaxially deposited semiconductor slices of high quality and high uniformity. However, the number of slices that can be uniformly treated by the Hartman et al. apparatus is limited (for example, to the neighborhood of twenty l A-inch-diameter slices).
  • a hollow cylindrical drum adapted to house a plurality of articles, such as semiconductor slices, within its inner surface.
  • the drum is constructed of material to facilitate inductive heating thereof, such as graphite.
  • the drum may have a plurality of recessed portions, within its inner surface, with flat surfaces inclined at a small acute angle e.g., 3) with the principal axis for contact with flat slices.
  • the recessed portions can be oriented circumferentially in one or more rows.
  • the drum is rotated within a bell jar.
  • a vapor for providing an epitaxial deposit of semiconductor material onto the slices may include a carrier gas, such as hydrogen, saturated with a halide of the semiconductor involved, as silicon tetrachloride.
  • Means are provided for rotating the hollow drurn about its principal vertical axis during the deposition.
  • An induction coil encloses the bell jar in order to heat the drum inductively.
  • the apparatus is covered by a Faraday shield to prevent undesired electrostatic interference.
  • articles such as semiconductor slices
  • a suitable material such as by epitaxially applying deposits thereto
  • the articles can be placed against internal corresponding inclined recessed surfaces of a hollow rotatable drum; the drum rotated with its principal axis oriented in the vertical direction so that centrifugal force causes the articles to better contact the drum; the drum covered by a bell jar; and the drum inductively heated from without the bell jar to heat the articles by conduction.
  • the bell jar is enclosed by a Faraday shield and raised and lowered along a guided path to permit an operator to remove the heated and/or coated articles from the drum and to replace those articles with other articles to be heated and/or coated.
  • the vapor such as hydrogen saturated with silicon tetrachloride, which is used for coating the articles, is directed along the principal axis toward the bell jar causing dispersion thereof in a manner to substantially uniformly affect the exposed surfaces of the slices.
  • FIG. 1 is an elevational view, partly in section, of deposition apparatus including a work holder in accordance with the invention
  • FIG. 2 is a perspective view, in section, of a portion of the work holder shown in FIG. 1, in accordance with the specific embodiment of the invention, illustrating how a slice is oriented within a recessed portion therein;
  • FIG. 3 is a side view, in section, of the work holder taken along the line 3-3 of FIG. 2;
  • FIG. 4 is an elevational view of a different work holder suitable for use with the embodiment of the invention shown in FIG. 1;
  • FIG. 5 is a perspective view, in section, of a recessed portion of the work holder shown in FIG. 4, illustrating how a slice fits therewithin.
  • the illustrative embodiment of the invention concerns methods and apparatus for heating and/or coating articles, including, for example, the epitaxial deposition of semiconductive coatings onto a plurality of silicon slices 10- 10, one of which is shown in FIG. 2.
  • a typical slice may measure l'A-inch diameter with a thickness of 5% to 6% mils.
  • the apparatus includes a high capacity epitaxial reactor 11, as shown in FIG. 1.
  • the reactor 11 includes a base member or housing 12 upon which a bell jar 13 mates therewith.
  • the bell jar 13 is constructed of inert, heat-resistant material, such as quartz.
  • a rotatable horizontal base plate 14 preferably of quartz, holds a hollow drum-like work holder 16 having inclined recessed portions l7-l7 (FIG. 2), each of which portions holds one of the slices 10.
  • the drum 16 includes a plurality of removably mounted annular members, such as graphite rings l515, which are adapted to be heated inductively.
  • a recessed portion 17 includes a flat face 18, inclined at a small angle 4:, preferably less than l5 and desirably in the neighborhood of 3, from the vertical.
  • Each of the recesses 17-17 has a U-shaped wall 19 surrounding the face 18, forming pockets for holding the silicon slices 10-10.
  • Spacers 21- 21 are inserted within holes 22--22 disposed around the rims of the graphite rings 15 to couple the rings together as a single drum 16, as shown in FIG. 1.
  • the support plate 14 is affixed to one end of a quartz support tube 23.
  • the other end of the support tube 23 is coupled to a flanged end 24 of a hollow shaft 26 that is adapted to rotate within a bearing 27 which provides an air tight seal within the housing 12.
  • a quartz gas tube 28, concentric within the shaft 26, extends from below the center of the drum 16, along its principal axis, down through the tube 23 and hollow shaft 26 to an inlet 29 to permit gas to be introduced therethrough into the bell jar 13, of the reactor 11.
  • a vacuum pump 31 is coupled to the housing 12 in order to remove air from the bell jar 13.
  • a spur gear 34 is fitted onto the hollow shaft 26 so as to mesh with a second spur gear 36 affixed to a drive shaft 37.
  • a motor 38 from without the reactor 11, is coupled to drive the shaft 37 by a magnetic coupler 39. Hence, the motor 38 causes the drum-like work holder 16 to rotate.
  • An induction heating coil 41 concentric with the graphite rings 15-15, circumferentially surrounds the outer periphery of the bell jar 13. Radio frequency (r.f.) energy is applied to the induction coil 41 so that the graphite rings 15 are heated by induction. Hence, the slices -10 held within the pockets 17-17 can be heated by conduction from the drum 16. By way of illustration, the graphite rings can be heated by r.f. energy in the neighborhood of 100 kilowatts at a frequency of 10 kilohertz.
  • a Faraday shield 42 cooled by a fluid, such as water, surrounds the induction coil 41 to limit undesired electrostatic interference caused by outgoing radiation due to the energy provided to the induction coil 41. Also, the Faraday shield 42 serves to lessen radiating heat from the reactor so that surrounding work area is not uncomfortable.
  • the Faraday shield 42, induction coil 41, and bell jar 13 ar joined together by a clamping member 43 so that they can be lowered or raised in unison along with suitable guides 44-44.
  • FIG. 2 A perspective section of one graphite ring 15 is shown in FIG. 2.
  • the recessed portion 17 includes a flat face 18 inclined at the small acute angle (1: (e.g., 3) with the principal axis, with a U-shaped wall 19 rimming the face 18 to form a pocket of sufficient dimension to house a slice 10.
  • the face 18 is inclined in order to hold the slice 10 both at rest and when centrifugal force is radially applied.
  • each of the rings 15-15 of of 11-inch diameter has a single row of pockets 17 around its internal periphery for holding a plurality of slices 10-10, for example, 20 in number.
  • a plurality of rings 15 can be stacked, one upon another, to form a single drum 16, in the manner shown in FIG. 1, so that, with five rings, 100 slices can be treated at one time.
  • each of the graphite rings 15-15, forming the drum 16, can be easily removed by an operator to enable easy insertion of semiconductor slices 10 within each of the recessed pockets 17-17 of the rings 15.
  • the bottom graphite ring 15 fits onto spacers 21 coupled to the base plate 14.
  • Each succeeding graphite ring 15 fits onto similar spacers 21-21 that are inserted into corresponding holes 22 of its preceding graphite ring.
  • an operator instead of removing one or more of the graphite rings, inserting the slices into the rings, and reinstalling the graphite rings onto the base plate, an operator, instead, can place the silicon slices 10-10 into the pockets 17-17 of the graphite rings 15 directly without intermediately removing the rings.
  • the bell jar 13, the r.f. coil 41 and the Faraday shield 42 then are lowered into place, along the guides 44-44, so that the bell jar 13 makes intimate contact with the base member 12.
  • the vacuum pump 31 is actuated so that the air within the bell jar 13 is removed.
  • Inert gas such as nitrogen or helium, is then introduced to atmospheric pressure.
  • Radio frequency energy is then supplied to the induction coil 41 to inductively heat the graphite rings 15 while hydrogen is introduced into the bell jar 13, creating an environment suitable for epitaxial deposition.
  • suitable fluid as water, flows through the Faraday shield 42 to limit the excessive heat which may radiate.
  • the motor 38 is started to rotate the graphite rings 15-15 as a unit through the magnetic coupler 39 and the gears 36 and 34.
  • the motor speed is set to rotate the graphite rings 15 from about ID to about 200 RPM.
  • a carrier gas such as hydrogen, saturated with a halide of the semiconductor involved, such as a 1 percent mixture of silicon tetrachloride, is introduced into the inlet 29.
  • the vapor is dispersed through the quartz gas tube 28, which does not rotate.
  • a complete deposition cycle takes approximately 2 hours to heat, to stabilize, and to deposit.
  • the deposition time to produce epitaxial deposits.(typically from 7 to 14 microns) is relatively short; the rate of deposition preferably is 1 micron per minute.
  • FIG. 4 shows an alternate embodiment of a workholdcr adapted to be inductively heated-hereinafier termed susceptor.
  • the susceptor 50 is an integral unit and is a hollow drum having pockets 51 therewithin for holding a plurality of semiconductor slices 10.
  • the pockets 51 are oriented in a plurality of rows 52 to 57.
  • Each of the rows 52 through 57 contains equally circumferentially spaced pockets 51 about the internal periphery of the susceptor 50.
  • six rows of 20 pockets each hold a total of I20 slices for treatment at one time. 7
  • FIG. 5 illustrates a circular pocket for housing a slice 10.
  • the circular pocket 51 is one of several possible configurations. Other suitable choices, such as the U-shaped pocket 17 shown in FIG. 2,can be used.
  • the pocket 51, shown in FIG. 5, in a similar manner, is inclined at a small acute angle with the principal axis, such as 3.
  • the susceptor 50 can be loaded and unloaded with slices 10 without removing the susceptor from its base plate 14.
  • a susceptor that was constructed with pockets inclined at a 15 angle produced, upon testing, deposits which were not so uniform as the susceptors having 3 inclined pockets.
  • two epitaxial reactors 11 are operated side by side with common electrical control apparatus so that, when slices are treated in one unit, the other unit can be loaded and unloaded.
  • drum is to be construed broadly to include both the one-piece drum and the multipiece drum as taught herein.
  • Apparatus for coating articles with a coating material which comprises:
  • a vertically positioned, hollow, rotatable drum having a plurality of article-receiving pockets formed at intervals along its internal surface, within which articles to be coated are placed so that the surfaces to be coated are ex- P means for rotating said drum about its principal axis so that centrifugal force causes said articles to have more intimate contact with the drum;
  • the drum being made of heat-conductive material
  • the impinging means comprising means for introducing a vapor coating material into said drum along its principal axis.
  • the drum is constructed of a material susceptible of being inductively heated
  • an r.f. induction coil is coupled external to, but in cooperating relationship with said drum to inductively heat said drtu'n by r.f. energy provided by said coil.
  • each pocket is formed with a flat interior wall inclined at an angle to the vertical, against which a flat surface of the article is placed to hold the article at an angle to the vertical.
  • Apparatus for depositing an epitaxial layer of semiconductive material on a plurality of semiconductor slices comprising:
  • a hollow, rotatable drum adapted to be inductively heated, within said bell jar, having its principal axis oriented vertically, said drum being adapted to hold semiconductor slices on its internal surface with the surfaces of the slices to be coated exposed;
  • c. means for introducing a carrier gas containing a heatdecomposable compound of the semiconductor involved along said principal axis and toward said bell jar so as to cause the gas to impinge upon the exposed surfaces of said slices;
  • said susceptible means is a hollow drum having its principal axis oriented in the vertical direction;
  • said susceptible means is adapted to hold semiconductor slices on its internal surface
  • said carrier gas is introduced along said principal axis;
  • Apparatus for vapor plating articles comprising the combination of a hermetically sealed chamber, an electrically conductive article support, means for rotatably mounting said article support within said enclosure, said support having a generally radially inwardly facing article engaging portion, means for rotating said article support whereby articles positioned against said portion are at least partially held in place by centrifugal force, an electric coil positioned for inducting heating current in said support, and vapor outlet means positioned within said enclosure for directing vapor over the heated articles.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
US601885A 1966-12-15 1966-12-15 Vapor deposition apparatus Expired - Lifetime US3659552A (en)

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BE (1) BE707980A (es)
DE (1) DE1621394A1 (es)
ES (1) ES348706A1 (es)
FR (1) FR1561186A (es)
GB (1) GB1210537A (es)
IL (1) IL29056A (es)
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SE (1) SE323353B (es)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US4419332A (en) * 1979-10-29 1983-12-06 Licentia Patent-Verwaltungs-G.M.B.H. Epitaxial reactor
WO1985002417A1 (en) * 1983-11-23 1985-06-06 Gemini Research, Inc. Method and apparatus for chemical vapor deposition
DE3540628A1 (de) * 1984-11-16 1986-07-03 Sony Corp., Tokio/Tokyo Dampfniederschlagsverfahren und vorrichtung zu seiner durchfuehrung
US4653428A (en) * 1985-05-10 1987-03-31 General Electric Company Selective chemical vapor deposition apparatus
US4672210A (en) * 1985-09-03 1987-06-09 Eaton Corporation Ion implanter target chamber
US4772356A (en) * 1986-07-03 1988-09-20 Emcore, Inc. Gas treatment apparatus and method
US4838983A (en) * 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US5438181A (en) * 1993-12-14 1995-08-01 Essex Specialty Products, Inc. Apparatus for heating substrate having electrically-conductive and non-electrically-conductive portions
WO2000008401A1 (en) * 1998-08-06 2000-02-17 Persys Technology Ltd. Furnace for processing semiconductor wafers
US6476366B2 (en) * 2000-04-18 2002-11-05 Moeller Gmbh Device for degassing and brazing preassembled vacuum interrupters using inductive heating
US20080257262A1 (en) * 1997-03-24 2008-10-23 Cree, Inc. Susceptor Designs for Silicon Carbide Thin Films
US20100269754A1 (en) * 2009-04-28 2010-10-28 Mitsubishi Materials Corporation Polycrystalline silicon reactor
WO2013083196A1 (en) * 2011-12-08 2013-06-13 Applied Materials, Inc. Substrate holder for full area processing, carrier and method of processing substrates
US20130149077A1 (en) * 2011-12-13 2013-06-13 Intermolecular, Inc. Method and apparatus for controlling force between reactor and substrate
US9076674B2 (en) * 2012-09-25 2015-07-07 Intermolecular, Inc. Method and apparatus for improving particle performance

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135559B (en) * 1983-02-14 1986-10-08 Electricity Council Induction heaters
EP0147967B1 (en) * 1983-12-09 1992-08-26 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition

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US2768098A (en) * 1950-09-12 1956-10-23 Siemens Ag Method and apparatus for precipitating metal from the vaporous state onto plates, particularly for the production of selenium coated rectifier plates
US2767682A (en) * 1951-03-22 1956-10-23 Syntron Co Vaporizing apparatus for producing selenium rectifiers
US2828225A (en) * 1954-03-01 1958-03-25 Sintercast Corp America Methods of infiltrating high melting skeleton bodies
US2885997A (en) * 1956-02-06 1959-05-12 Heraeus Gmbh W C Vacuum coating
US2906236A (en) * 1954-05-11 1959-09-29 Syntron Co Revolving cylindrical frame for selenium depositors
US3019129A (en) * 1959-08-10 1962-01-30 Nat Res Corp Apparatus and process for coating
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member
US3148085A (en) * 1961-04-13 1964-09-08 Bell Telephone Labor Inc Method and apparatus for fabricating semiconductor devices
US3301213A (en) * 1962-10-23 1967-01-31 Ibm Epitaxial reactor apparatus
US3329524A (en) * 1963-06-12 1967-07-04 Temescal Metallurgical Corp Centrifugal-type vapor source
US3408982A (en) * 1966-08-25 1968-11-05 Emil R. Capita Vapor plating apparatus including rotatable substrate support
US3424629A (en) * 1965-12-13 1969-01-28 Ibm High capacity epitaxial apparatus and method

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2768098A (en) * 1950-09-12 1956-10-23 Siemens Ag Method and apparatus for precipitating metal from the vaporous state onto plates, particularly for the production of selenium coated rectifier plates
US2767682A (en) * 1951-03-22 1956-10-23 Syntron Co Vaporizing apparatus for producing selenium rectifiers
US2828225A (en) * 1954-03-01 1958-03-25 Sintercast Corp America Methods of infiltrating high melting skeleton bodies
US2906236A (en) * 1954-05-11 1959-09-29 Syntron Co Revolving cylindrical frame for selenium depositors
US2885997A (en) * 1956-02-06 1959-05-12 Heraeus Gmbh W C Vacuum coating
US3019129A (en) * 1959-08-10 1962-01-30 Nat Res Corp Apparatus and process for coating
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member
US3148085A (en) * 1961-04-13 1964-09-08 Bell Telephone Labor Inc Method and apparatus for fabricating semiconductor devices
US3301213A (en) * 1962-10-23 1967-01-31 Ibm Epitaxial reactor apparatus
US3329524A (en) * 1963-06-12 1967-07-04 Temescal Metallurgical Corp Centrifugal-type vapor source
US3424629A (en) * 1965-12-13 1969-01-28 Ibm High capacity epitaxial apparatus and method
US3408982A (en) * 1966-08-25 1968-11-05 Emil R. Capita Vapor plating apparatus including rotatable substrate support

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
US4419332A (en) * 1979-10-29 1983-12-06 Licentia Patent-Verwaltungs-G.M.B.H. Epitaxial reactor
WO1985002417A1 (en) * 1983-11-23 1985-06-06 Gemini Research, Inc. Method and apparatus for chemical vapor deposition
DE3540628A1 (de) * 1984-11-16 1986-07-03 Sony Corp., Tokio/Tokyo Dampfniederschlagsverfahren und vorrichtung zu seiner durchfuehrung
US4653428A (en) * 1985-05-10 1987-03-31 General Electric Company Selective chemical vapor deposition apparatus
US4672210A (en) * 1985-09-03 1987-06-09 Eaton Corporation Ion implanter target chamber
US4772356A (en) * 1986-07-03 1988-09-20 Emcore, Inc. Gas treatment apparatus and method
US4838983A (en) * 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US5438181A (en) * 1993-12-14 1995-08-01 Essex Specialty Products, Inc. Apparatus for heating substrate having electrically-conductive and non-electrically-conductive portions
US20080257262A1 (en) * 1997-03-24 2008-10-23 Cree, Inc. Susceptor Designs for Silicon Carbide Thin Films
WO2000008401A1 (en) * 1998-08-06 2000-02-17 Persys Technology Ltd. Furnace for processing semiconductor wafers
US6157003A (en) * 1998-08-06 2000-12-05 Persys Technology, Ltd. Furnace for processing semiconductor wafers
US6476366B2 (en) * 2000-04-18 2002-11-05 Moeller Gmbh Device for degassing and brazing preassembled vacuum interrupters using inductive heating
US20100269754A1 (en) * 2009-04-28 2010-10-28 Mitsubishi Materials Corporation Polycrystalline silicon reactor
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BE707980A (es) 1968-04-16
FR1561186A (es) 1969-03-28
DE1621394A1 (de) 1971-06-03
SE323353B (es) 1970-05-04
NL6717117A (es) 1968-06-17
IL29056A (en) 1971-01-28
GB1210537A (en) 1970-10-28
ES348706A1 (es) 1969-07-01

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