US3463666A - Monocrystalline beta silicon carbide on sapphire - Google Patents
Monocrystalline beta silicon carbide on sapphire Download PDFInfo
- Publication number
- US3463666A US3463666A US483340A US3463666DA US3463666A US 3463666 A US3463666 A US 3463666A US 483340 A US483340 A US 483340A US 3463666D A US3463666D A US 3463666DA US 3463666 A US3463666 A US 3463666A
- Authority
- US
- United States
- Prior art keywords
- silicon carbide
- sapphire
- monocrystalline
- substrate
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title description 18
- 229910010271 silicon carbide Inorganic materials 0.000 title description 17
- 229910052594 sapphire Inorganic materials 0.000 title description 11
- 239000010980 sapphire Substances 0.000 title description 11
- 239000000758 substrate Substances 0.000 description 18
- 239000013078 crystal Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- IJOOHPMOJXWVHK-UHFFFAOYSA-N trimethylsilyl-trifluoromethansulfonate Natural products C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 3
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 3
- 239000005049 silicon tetrachloride Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000005055 methyl trichlorosilane Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- -1 alkyl chlorosilanes Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Definitions
- the present invention relates to semiconductor crystals, and more particularly to methods of providing silicon carbide single crystals suitable for semiconductor use in microelectronic circuits for high temperature environments.
- Semiconductor electronic devices have opened many new fields of application for electronic circuits.
- One area of potential use is in high temperature environments where conventional vacuum tubes would fail to function, or even melt.
- Semiconductor devices made of commonly used materials such as silicon and germanium may be operated at higher temperatures than can conventional vacuum tubes and exhibit power requirements of much diminished magnitude as well.
- there are many potential applications in missiles and equipment controls where circuits having still higher temperature capabilities are desirable or required.
- silicon carbide has heretofore been suggested for use in high temperature circuit applications. Due to the large binding energy required to break covalent bonds in silicon carbide, this material has been used at temperatures above 600 C., and the upper limit is not yet known with certainty. The large binding energy also provides excellent radiation resistance. Since single crystal structure is, in general, required for active semiconductor devices, there has recently been expended a large amount of effort in finding an economical method of producing monocrystalline silicon carbide. It is toward this problem that the present invention is directed.
- An object of the present invention is to provide an economical method of producing monocrys talline silicon carbide suitable for semiconductor device use.
- the present invention consists in the thermal reduction of a carbon and silicon-containing gas on a monocrystalline sapphire substrate.
- the gas used may be either an organosilane or a mixture of gaseous silicon compounds and carbon compounds.
- the thermal reduction is carried on in a stream of carrier gas such as hydrogen or argon.
- the monocrystalline sapphire substrate has a crystal lattice which very closely approximates the crystal lattice structure of silicon carbide.
- any of the gases known heretofore for production of silicon carbide by thermal decomposition of gases are suitable in the present process.
- gases known heretofore for production of silicon carbide by thermal decomposition of gases are suitable in the present process.
- gases Those recited in Canadian Patent No. 657,304, and US Patent 3,011,912, are exemplary.
- the preferred gases are halogenated, including dimethyldichlorosilane, methyltrichlorosilane, trimethylmonochlorosilane and a mixture of methane and silicon tetrachloride.
- Hydrogen is preferred as a carrier gas, and the temperature range for deposition may vary between about 1650 C. and 2000 C.
- a single crystal sapphire substrate was placed in a reaction chamber and was heated to a temperature of 1700 C.
- a gas mixture consisting of 7 liters per minute of H and 50 cc. per min. of (CH SiCl was passed over the heated substrate for 30 minutes, the pressure in the reaction chamber being atmospheric.
- Transparent yellow beta-silicon carbide in oriented single crystal form was formed on the substrate.
- the silicon carbide crystals can be doped to n-type, p-type, or to form p-n junctions by the addition of known gaseous dopants to the gas stream being fed into the reaction chamber. After forming the desired p-n junctions in the crystals, leads may be attached to the various portions of the crystal form active semiconductor devices.
- the sapphire substrate acts as an electrical insulator so that monolithic circuits can be constructed on the substrate by conventional masking and deposition techniques. Since the sapphire also has a much higher temperature capability than conventional monolithic circuit substrates the resultant circuit may be used in high temperature environments.
- the silicon carbide crystals may be removed from the substrate by etching the substrate away with suitable etchant materials and the crystals used to form devices or circuits as independent entities apart from the substrate.
- a method of producing monocrystalline beta silicon carbide comprising:
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48334065A | 1965-08-27 | 1965-08-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3463666A true US3463666A (en) | 1969-08-26 |
Family
ID=23919666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US483340A Expired - Lifetime US3463666A (en) | 1965-08-27 | 1965-08-27 | Monocrystalline beta silicon carbide on sapphire |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3463666A (en, 2012) |
| CH (1) | CH480869A (en, 2012) |
| DE (1) | DE1282621B (en, 2012) |
| GB (1) | GB1115237A (en, 2012) |
| NL (1) | NL6612035A (en, 2012) |
| SE (1) | SE309969B (en, 2012) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200157A (en) * | 1986-02-17 | 1993-04-06 | Toshiba Ceramics Co., Ltd. | Susceptor for vapor-growth deposition |
| US20120112198A1 (en) * | 2010-11-09 | 2012-05-10 | International Business Machines Corporation | Epitaxial growth of silicon carbide on sapphire |
| US8541769B2 (en) | 2010-11-09 | 2013-09-24 | International Business Machines Corporation | Formation of a graphene layer on a large substrate |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4121798A1 (de) * | 1991-07-02 | 1993-01-14 | Daimler Benz Ag | Mehrschichtige, monokristallines siliziumkarbid enthaltene zusammensetzung |
| JP3296998B2 (ja) * | 1997-05-23 | 2002-07-02 | 日本ピラー工業株式会社 | 単結晶ＳｉＣおよびその製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2962388A (en) * | 1954-03-12 | 1960-11-29 | Metallgesellschaft Ag | Process for the production of titanium carbide coatings |
| US3011912A (en) * | 1959-12-22 | 1961-12-05 | Union Carbide Corp | Process for depositing beta silicon carbide |
| US3065050A (en) * | 1957-08-28 | 1962-11-20 | Baeumert Paul August Franz | Process of producing fluorine compounds from fluorine-containing minerals and the like |
| US3099534A (en) * | 1956-06-25 | 1963-07-30 | Siemens Ag | Method for production of high-purity semiconductor materials for electrical purposes |
| US3157541A (en) * | 1958-10-23 | 1964-11-17 | Siemens Ag | Precipitating highly pure compact silicon carbide upon carriers |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1047180B (de) * | 1958-04-03 | 1958-12-24 | Wacker Chemie Gmbh | Verfahren zur Herstellung von sehr reinem kristallinem Siliciumcarbid |
-
1965
- 1965-08-27 US US483340A patent/US3463666A/en not_active Expired - Lifetime
-
1966
- 1966-07-21 DE DED50644A patent/DE1282621B/de active Pending
- 1966-08-02 SE SE10514/66A patent/SE309969B/xx unknown
- 1966-08-16 GB GB36643/66A patent/GB1115237A/en not_active Expired
- 1966-08-26 NL NL6612035A patent/NL6612035A/xx unknown
- 1966-08-26 CH CH1237266A patent/CH480869A/de not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2962388A (en) * | 1954-03-12 | 1960-11-29 | Metallgesellschaft Ag | Process for the production of titanium carbide coatings |
| US3099534A (en) * | 1956-06-25 | 1963-07-30 | Siemens Ag | Method for production of high-purity semiconductor materials for electrical purposes |
| US3065050A (en) * | 1957-08-28 | 1962-11-20 | Baeumert Paul August Franz | Process of producing fluorine compounds from fluorine-containing minerals and the like |
| US3157541A (en) * | 1958-10-23 | 1964-11-17 | Siemens Ag | Precipitating highly pure compact silicon carbide upon carriers |
| US3011912A (en) * | 1959-12-22 | 1961-12-05 | Union Carbide Corp | Process for depositing beta silicon carbide |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200157A (en) * | 1986-02-17 | 1993-04-06 | Toshiba Ceramics Co., Ltd. | Susceptor for vapor-growth deposition |
| US20120112198A1 (en) * | 2010-11-09 | 2012-05-10 | International Business Machines Corporation | Epitaxial growth of silicon carbide on sapphire |
| US8541769B2 (en) | 2010-11-09 | 2013-09-24 | International Business Machines Corporation | Formation of a graphene layer on a large substrate |
| US20130285014A1 (en) * | 2010-11-09 | 2013-10-31 | International Business Machines Corporation | Formation of a graphene layer on a large substrate |
| US9236250B2 (en) * | 2010-11-09 | 2016-01-12 | Globalfoundries Inc. | Formation of a graphene layer on a large substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1282621B (de) | 1969-09-11 |
| NL6612035A (en, 2012) | 1967-02-28 |
| SE309969B (en, 2012) | 1969-04-14 |
| GB1115237A (en) | 1968-05-29 |
| CH480869A (de) | 1969-11-15 |
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