US2794322A - Variable temperature refrigeration - Google Patents

Variable temperature refrigeration Download PDF

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Publication number
US2794322A
US2794322A US440022A US44002254A US2794322A US 2794322 A US2794322 A US 2794322A US 440022 A US440022 A US 440022A US 44002254 A US44002254 A US 44002254A US 2794322 A US2794322 A US 2794322A
Authority
US
United States
Prior art keywords
receiver
refrigerants
refrigerant
mixture
evaporator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US440022A
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English (en)
Inventor
Theodore L Etherington
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Priority to US440022A priority Critical patent/US2794322A/en
Priority to ES0222633A priority patent/ES222633A1/es
Application granted granted Critical
Publication of US2794322A publication Critical patent/US2794322A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B9/00—Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
    • F25B9/002—Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point characterised by the refrigerant
    • F25B9/006—Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point characterised by the refrigerant the refrigerant containing more than one component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material

Definitions

  • This invention relates to refrigeration systems and specifically to a method and apparatus to secure variable temperature levels in such systems.
  • a pair of low temperature immiscible refrigerants are selectively mixed and circulated in a refrigeration system to provide variable temperature levels of refrigeration.
  • Fig. 1 is a schematic view of one form of a refrigeration system which embodies my invention.
  • Fig. 2 is a solubility graph determined at the system pressure of aperfluoropropane (C3Fs)and Freon 31 (CHzClF) mixture in which composition in percentage degrees Fahrenheit.
  • C3Fs aperfluoropropane
  • CHzClF Freon 31
  • a refrigeration system which may be used in heat pump construction or in commercial or domestic refrigerators and which is indicated generally at 10, comprises a compressor 11 which communicates on its high pressure side with a condenser 12.
  • Condenser 12 is connected to an operating liquid receiver 13 in which a pair of low temperature immiscible refrigerants 14 and 15 coexist in a mixture 16 to form one liquid phase of desired composition.
  • Tube 18 conveys refrigerant solution 16 from opened to tube 21,
  • a float 20 may be positioned in receiver 17 to actuate valve 19 through a suitable electrical or mechanical connection.
  • the refrigerant mixture 16 is circulated from the operating receiver 13 to a common tube 21 at the inlet side of an evaporator 22 through an outlet 23, an expansion valve 24, a heat exchanger coil 25 in storage receiver 17, and an outlet 26.
  • Coil 25 carries the low temperature refrigerant mixtures 16 of liquid and vapor,
  • Expansion valve 24 is shown to be of a conventionaltype which is operated by a valve control 27 which comprises a pressure tube'28 anddiaphragm 29.
  • a temperature-operated or thermostatic valve or sections of capillary tubing may be employed as the expansion device.
  • a three-way, three-position valve 30 controls'a pair of outlets 31 and 32 which are in communcation with refrigerants 14 and 15 in receiver 17.
  • -A load sensing and sequence control device 33 of any conventional construction may be provided to selectively operate valve 30 in response to the system load.
  • Tube 21 connects valve 30 to evaporator 22 which communicates with the low pressure side of compressor 11 to complete the refrigeration system.
  • the pair of low temperature immiscible refrigerants 14 and 15, which have difierent volatility and density characteristics are selectively mixed and circulated through the refrigeration system in response to the load thereon.
  • each'of the refrigerants which is selected for circulation in the system has a difierentdensity from the other refrigerant and exhibits insolubility in the other refrigerant of the pair at or below customary evaporator temperatures to provide a separation of the refrigerants into two layers in the storage receiver 17.
  • Compressor 11 pumps refrigerant m xture 16 through condenser 12 to operating liquid receiver 13.
  • the refrigerant solution is then circulated through outlet 23, expan sion valve 24, coil 25, outlet 26, tube 21, and evaporator 22 to the inlet side of compressor 11.
  • outlet 31 is refrigerant 14 is added to refrigerant mixture 16 which is circulating in the system.
  • An equal volume of refrigerant mixture 16 is simultaneously conveyed from receiver 13 to receiver 17 through tube 18 and control valve 19.
  • Valve 19 may be actuated by any suitable controls, such as, for example, a float 29, which is positioned in the receiver 17 and connected mechanically or electrically to valve 19.
  • the withdrawal of refrigerant DCver 17 maintains the temperature therein at evaporator temperature to separate refrigerant mixture 16 into refrigerants 14 and 15 in two immiscible layers.
  • the refrigeration system may circulate either essentially pure refrigerant 14 or 15 or a refrigerant mixture 16 of any desired composition.
  • a solubility graph is shown in which composition in mole percentage of a perfluoropropane (CsFs) and Freon 31 (CHsClF) mixture is plotted against the temperature in degrees Fahrenheit.
  • CsFs perfluoropropane
  • CHsClF Freon 31
  • Such a refrigerant solution is generally miscible above 44 F. and immiscible below this temperature.
  • the temperature of storage receiver 17 in Fig. 1 is maintained at or below the evaporator temperature to maintain the refrigerants 14 and,
  • one immiscible refrigerant layer is composed of 85.5% by weight of perfluoropropane (CsFa) and 14.5% by weight of Freon 31 (CI-IzClF).
  • the other refrigerant layer is 84% Freon 31 and 16% perfiuoropropane.
  • a, compressor, .a condenser, an operating liquid receiver and a storage liquid separate the refrigerants in the storage receiver, means to conduct said refrigerants from the separating means to the inlet of the evaporator, and means to selectively control the relative amounts of said refrigerants to circulate through said evaporator.
  • a method of refrigeration which comprises circulating a refrigerant mixture of a pair of low temperature essentially immiscible refrigerants with different volatility and density characteristics in a refrigeration system, storing a supply of said refrigerants in their immiscible phase in addition to said refrigeration system, increasing the relative amount of one of the refrigerants in said mixture, withdrawing an equal amount of said circulating mixture for return to said storage supply, and cooling said with drawn amount to separate said mixture into two essentially immiscible refrigerants.
  • a refrigeration system including a compressor, a condenser, and an evaporator, a liquid receiver connected to said condenser and said evaporator, a storage receiver connected to said liquid receiver and said evaporator, a pair of low temperature essentially immiscible refriger ants with different volatility and density characteristics in said storage receiver, means to selectively control the relative amounts of the refrigerants to pass from said storage receiver to said evaporator, and cooling means positioned within said storage receiver to separate the refrigerants.
  • a refrigerant system including an evaporator, a compressor, an operating liquid receiver, and a storage liquid receiver, a pair of low temperature essentially immiscible refrigerants in said storage receiver, a mixture of said refrigerants in said operating receiver, means for circulating said mixture from the said operating receiver through said system, means for maintaining the temperature of the storage receiver as a function of the evaporator temperature, means dependent upon the system load for introducing a quantity of one'of said refrigerants in said storage receiver into the said system, and means for withdrawing an equal quantity of the refrigerant mixture from the said system for return to the said storage receiver.
  • a pair of low temperature essentially immiscible refrigerants in said storage receiver means to maintain the temperature of the storage receiver within the immiscible range of the refrigerants therein, a mixture of refrigerants in said operating receiver, means for continuously circulating only a mixture of refrigerants through said system, and means for varying the mixture circulating in said system, said means including introducreceiver, an evaporator, means connecting the outlet of the compressor and the inlet of the condenser, means conecting the outlet of the condenser and the inlet of the said operating liquid receiver, means connecting the outlets of the receivers and the inlet of the evaporator, cooling means connected to the operating liq 'd receiver to ing a quantity of one of the refrigerants in said storage receiver into the system, and simultaneously Withdrawing an equal quantity of the refrigerant mixture from

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Glass Compositions (AREA)
  • Resistance Heating (AREA)
  • Devices That Are Associated With Refrigeration Equipment (AREA)
US440022A 1954-06-29 1954-06-29 Variable temperature refrigeration Expired - Lifetime US2794322A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US440022A US2794322A (en) 1954-06-29 1954-06-29 Variable temperature refrigeration
ES0222633A ES222633A1 (es) 1954-06-29 1955-06-25 UN SISTEMA DE REFRIGERACIoN DE TEMPERATURA VARIABLE, Y APARATO PARA SU APLICACIoN

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US440022A US2794322A (en) 1954-06-29 1954-06-29 Variable temperature refrigeration
US518556A US2794846A (en) 1955-06-28 1955-06-28 Fabrication of semiconductor devices

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Publication Number Publication Date
US2794322A true US2794322A (en) 1957-06-04

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US440022A Expired - Lifetime US2794322A (en) 1954-06-29 1954-06-29 Variable temperature refrigeration
US518556A Expired - Lifetime US2794846A (en) 1954-06-29 1955-06-28 Fabrication of semiconductor devices

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US518556A Expired - Lifetime US2794846A (en) 1954-06-29 1955-06-28 Fabrication of semiconductor devices

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US (2) US2794322A (hr)
JP (1) JPS321180B1 (hr)
BE (1) BE548647A (hr)
CH (1) CH361340A (hr)
DE (1) DE1046785B (hr)
FR (1) FR1154322A (hr)
GB (1) GB816799A (hr)
NL (2) NL99619C (hr)

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JPS321180B1 (hr) 1957-02-19
DE1046785B (de) 1958-12-18
NL207969A (hr)
GB816799A (en) 1959-07-22
BE548647A (hr)
FR1154322A (fr) 1958-04-04
NL99619C (hr)
CH361340A (fr) 1962-04-15
US2794846A (en) 1957-06-04

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