US2748349A - Fabrication of junction transistors - Google Patents

Fabrication of junction transistors Download PDF

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Publication number
US2748349A
US2748349A US486073A US48607355A US2748349A US 2748349 A US2748349 A US 2748349A US 486073 A US486073 A US 486073A US 48607355 A US48607355 A US 48607355A US 2748349 A US2748349 A US 2748349A
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US
United States
Prior art keywords
probe
bar
current
junction
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US486073A
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English (en)
Inventor
Jr Emil Dickten
Richard P Riesz
Jr Robert L Wallace
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Bell Telephone Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE543825D priority Critical patent/BE543825A/xx
Priority to NL201406D priority patent/NL201406A/xx
Priority to NL98752D priority patent/NL98752C/xx
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to US486073A priority patent/US2748349A/en
Priority to FR1147942D priority patent/FR1147942A/fr
Priority to GB2470/56A priority patent/GB789712A/en
Application granted granted Critical
Publication of US2748349A publication Critical patent/US2748349A/en
Priority to DEM45270A priority patent/DE1154591B/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10K—PURIFYING OR MODIFYING THE CHEMICAL COMPOSITION OF COMBUSTIBLE GASES CONTAINING CARBON MONOXIDE
    • C10K1/00—Purifying combustible gases containing carbon monoxide
    • C10K1/08—Purifying combustible gases containing carbon monoxide by washing with liquids; Reviving the used wash liquors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Definitions

  • Suchl a junction transistor comprises a bar of a semii dimension of the bar, is of ⁇ opposite conductivity type, V
  • the high frequency cutoff depends on its size, and the higher v' the frequency at which Vit is to be employed, the more i minute it must be. To reduce transit time effects, and so increase the high frequency cutoff, the widthk of the intermediate zone should be very small indeed. Furthermore, the cross section of the semiconductor bar itself at the intermediate zone should also be very small, ⁇
  • the principal object of the invention is to determine the exact location, on a minute bar of semiconductor material which is principally of one conductivity type, of a still more minute intermediate zone of opposite conductivity type, thereupon to bond one or more electrodes to this intermediate zone, and to perform these operations with rapidity, certainty and reliability.
  • the searching operation is advantageously carried out through the agency of a minute probe to which a reverse base bias is applied, while working current flows from end to end of the bar.
  • the bar operates in accordance with transistor principles and the probe, now. playing the part of the base electrode of a transistor and being reversely biased, acts to hold the ICC transistor in its ⁇ cutoff state.
  • the probe engages 'the material of either end of the bar, no transistor action takesv place, and the collector current is unchanged.
  • monitoring the collector current as by observation of the current-voltage characteristics of the bar as represented ony the screen of anoscilloscope during the probing process, enables the operator to determine whether the probe is engaged with the P-type layer or not.
  • a specic object of the present invention is to remove such uncertainty. This object isaccomplished, in accordance with the present invention, by momentarily applying a brief currentpulse to the probe, immediately prior to the monitoring .of the characteristic of the bar. This pulse ⁇ should be of sign opposite to the probe bias, and may advantageously be of greater magnitude.
  • Fig. 1 is a perspective drawing showing a semiconductive bar which an operator is probing to locate an intermediate layer of opposite conductivity type from the body of the bar, while carrying out the method of the invention; l v
  • Figs. 2 and 3 are diagrams illustrating the currentvoltage characteristics of such a bar as they appear on the screen of an oscilloscope under various conditions of probe location and of pulsing.
  • Fig. l shows a semiconductive bar 1, e. g., a bar of germanium of which the end portions 2, 3 are of N-type conductivity while a minute layer 4 extending transversely from side to side of the bar and at some unknown location intermediate its ends, is of P-type conductivity.
  • the left-hand end portion of the bar is separated from the intermediate layer by an emitter junction and the right-hand end portion is separated from the intermediate layer by a collector junction.
  • Such a bar may be cut from a much larger single crystal of germanium which has been fabricated by the so-called rate drawing process of an application of E. Buehler and G. K. Teal, Serial No. 234,408, filed June 29, 1951.
  • the bar may be supported between spring terminals 5 lixed to insulating supports 6.
  • the probe 7 with which the bar is to be searched is preferably a line wire 7 of a tough, ductile conductive metal.
  • An alloy of gold containing about 2 per cent of gallium has been found to serve well.
  • This wire whose diameteris of the order of 1.6 mils, is supported, as by Patented i-' May- 29, 17956v welding to a much thicker metal rod, for example a nickel wire 8 of about 10 mils diameter.
  • Theunsupported end of the wire is bent through a right angle for a length of about l mils and the tip of the bent portion is reduced to a thickness substantially less than 1.6 mils.
  • the nickel wire 8 to which the gold probe 7 iswelded is supported in a clamp 9 which is mounted for precise controlled movement parallel with the axis of the bar 1 as by a conventional micromanipulator. This movement may be actuated by a micrometer screw 10 bearing a calibrated sleeve.
  • a simple and convenient one which takes full advantage of the properties of the transistor, is to apply an alternating voltage, e. g., of 60 cycles per second, across the two end terminals of the bar, and a steady bias of appropriate polarity to the probe.
  • an alternating-current source 11 is connected through a load resistor 12 to the two ends of the bar 1 while a current source, i. e., a battery 13 in series with a high resistor 14, is connected to the probesupporting clamp 9, poled to supply negative voltage to the clamp.
  • the voltage which appears across the load resistor 12 may be applied to the horizontal deflection plates of a cathode ray oscilloscope 15 so that the horizontal coordinate of the resulting pattern as it appears on the oscilloscope screen is proportional to the current owing through the collector electrode 3 of the bar l.
  • the voltage which appears across the bar 1 may be applied tothe vertical deflecting plates of the oscilloscope 15.
  • the pattern displayed on the oscilloscope screen 16 represents the current-voltage characteristic of the bar 1.
  • the probe 7 is advanced by minute steps while the pattern on the oscilloscope screen 16 is examined. While the probe is still in engagement with the emitter end portion 2 of the bar 1 the pattern on the screen is merely that which results from the flow of current through the emitter junction and the collector junction in series. Inasmuch as each of these junctions exhibits a rectifier characteristic, and for each polarity of the actuating voltage one of them is biased in the forward direction and the other in the reverse direction, the resulting pattern on the oscilloscope screen 16 is the wellknown current-voltage characteristic of two opposed rectifers as illustrated in Fig. 2. Illumination of the bar, as
  • the probe 7 can serve as the base electrode of a transistor. lts negative bias acts to hold the transistor in its cutoffl state, and so greatly reduces the collector current. This effect is accentuated by illumination of the bar, and it is represented on the oscilloscope screen by a pattern having the configuration shown on the screen 16 of Fig. 1.
  • any one of these irregular or dancing patterns is immediately converted into a positive pattern, either of the character shown in Fig. 2 indicating that the probe has not yet reached the P-type layer, or has passed it, or of the character shown in Fig. 1 which indicates with equal certainty that the probe is engaged with the P-typelayer.
  • a steady pattern of the Fig. 2 variety is ofte'n converted by the momentary current pulse into a pattern of the Fig. 1 variety.
  • the current pulse which has this advantageous eEect is conveniently secured by connection of an auxiliary battery 20, in series with a resistor 21 and a manually controlled switch 22, to the probe-supporting clamp 9 as shown in the figure.
  • the polarity of the battery 20 is opposite to that 'of the steady probe bias battery 13.
  • the steady bias of the probe is negative with respect to the emitter end 2 of the bar while the pulse bias is positive with respect to the emitter end of the bar.
  • the conductivity types of the several portions of the bar were interchanged the polarities of both batteries should be interchanged accordingly.
  • the magnitude of the pulse bias battery is at least twice that of the steady bias battery.
  • closure -of the switch momentarily applies a positive electrical yaction or merely due to surface charge-considerations as discussed, for example by J. Jolie in Electrical Communication for 1945, volume 22, page 217, and that the electrical characteristics of this film are N-type rather than P-type.
  • a microscopic rectifier barrier may exist between the body of the P-type material and the metal of the probe, which presents a very high impedance to the voltage'of the steady bias source.
  • the method of determining the exact location, on a semiconductor body of which the end portions are of one conductivitytype, of an intermediate zone of opposite conductivity type which comprises applying a voltage from end to end of said body, engaging a probe with said body, biasing said probe in the reverse polarity with respect to the material of said intermediate zone, advancing said probe in steps over the surface of said body, causing a momentary current pulse to iiow through said probe to said body after each step, thereby to establish ohmic contact between said probe and said body, measuring the current owing through said body, and noting the location of said probe on said body at which the current ilowing through said body is signiiicantly modied by the joint inuence of the bias on said probe and of said current pulse.
  • the method of determining the exact location, on a semiconductor body of which at least one portion is of one conductivity type and a contiguous portion is of opposite conductivity type, of a junction separating said portions, said one portion being equipped with a terminal which comprises, engaging a probe with said body, said probe constituting anotherterminal, applying a voltage between said terminals, advancing said probe over the surface of said body, causing a succession of brief current pulses to ow through said probe to successively different parts of said body, thereby to establish ohmic contact between said probe and said body at each of said parts, measuring the current iiowing through said terminals after each of said pulses, and noting the location of said probe on said body at which said current is significantly modified by said probe.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
US486073A 1955-02-04 1955-02-04 Fabrication of junction transistors Expired - Lifetime US2748349A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
BE543825D BE543825A (enrdf_load_stackoverflow) 1955-02-04
NL201406D NL201406A (enrdf_load_stackoverflow) 1955-02-04
NL98752D NL98752C (enrdf_load_stackoverflow) 1955-02-04
US486073A US2748349A (en) 1955-02-04 1955-02-04 Fabrication of junction transistors
FR1147942D FR1147942A (fr) 1955-02-04 1955-10-11 Fabrication de transistors à jonctions
GB2470/56A GB789712A (en) 1955-02-04 1956-01-25 Methods of determining the location of p or n zones in semiconductor bodies
DEM45270A DE1154591B (de) 1955-02-04 1960-05-11 Verfahren zur selektiven Auswaschung von Schwefelverbindungen aus Gasgemischen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US486073A US2748349A (en) 1955-02-04 1955-02-04 Fabrication of junction transistors

Publications (1)

Publication Number Publication Date
US2748349A true US2748349A (en) 1956-05-29

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ID=23930493

Family Applications (1)

Application Number Title Priority Date Filing Date
US486073A Expired - Lifetime US2748349A (en) 1955-02-04 1955-02-04 Fabrication of junction transistors

Country Status (5)

Country Link
US (1) US2748349A (enrdf_load_stackoverflow)
BE (1) BE543825A (enrdf_load_stackoverflow)
FR (1) FR1147942A (enrdf_load_stackoverflow)
GB (1) GB789712A (enrdf_load_stackoverflow)
NL (2) NL201406A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2951204A (en) * 1957-04-08 1960-08-30 Texas Instruments Inc Method and apparatus for locating the base section of a transistor bar
US2956230A (en) * 1958-08-29 1960-10-11 Texas Instruments Inc Method for locating p-n junctions in semiconductor bodies
US3067387A (en) * 1959-07-14 1962-12-04 Ibm P-n junction position determination
US3185927A (en) * 1961-01-31 1965-05-25 Kulicke & Soffa Mfg Co Probe instrument for inspecting semiconductor wafers including means for marking defective zones
US3351733A (en) * 1963-08-21 1967-11-07 Hitachi Ltd Welding method
US3548491A (en) * 1967-02-03 1970-12-22 Ibm Mass production of electronic devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE571509A (enrdf_load_stackoverflow) * 1957-09-26 1900-01-01

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2951204A (en) * 1957-04-08 1960-08-30 Texas Instruments Inc Method and apparatus for locating the base section of a transistor bar
US2956230A (en) * 1958-08-29 1960-10-11 Texas Instruments Inc Method for locating p-n junctions in semiconductor bodies
US3067387A (en) * 1959-07-14 1962-12-04 Ibm P-n junction position determination
US3185927A (en) * 1961-01-31 1965-05-25 Kulicke & Soffa Mfg Co Probe instrument for inspecting semiconductor wafers including means for marking defective zones
US3351733A (en) * 1963-08-21 1967-11-07 Hitachi Ltd Welding method
US3548491A (en) * 1967-02-03 1970-12-22 Ibm Mass production of electronic devices

Also Published As

Publication number Publication date
BE543825A (enrdf_load_stackoverflow)
NL201406A (enrdf_load_stackoverflow)
NL98752C (enrdf_load_stackoverflow)
FR1147942A (fr) 1957-12-02
GB789712A (en) 1958-01-29

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