US2162362A - Asymmetrical conductor - Google Patents

Asymmetrical conductor Download PDF

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Publication number
US2162362A
US2162362A US234377A US23437738A US2162362A US 2162362 A US2162362 A US 2162362A US 234377 A US234377 A US 234377A US 23437738 A US23437738 A US 23437738A US 2162362 A US2162362 A US 2162362A
Authority
US
United States
Prior art keywords
oxide
copper
per cent
thallium
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US234377A
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English (en)
Inventor
George O Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Bell Telephone Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE475711D priority Critical patent/BE475711A/xx
Priority to NL65452D priority patent/NL65452C/xx
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to US234377A priority patent/US2162362A/en
Application granted granted Critical
Publication of US2162362A publication Critical patent/US2162362A/en
Priority to GB19265/47A priority patent/GB631041A/en
Priority to FR949907D priority patent/FR949907A/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Definitions

  • This invention relates to electrical current conducting devices that oiTer a greater resistance to ilow-oi current in one direction than in the opposite direction and more particularly to such devices of the copper cuprous oxide type.
  • An object of this invention is to improve the current-voltage characteristics of copper-cuprous oxide rectifiers by increasing the resistance in both the high and low current directions, the increase in the high current direction being for voltages up to about 1 -volt.
  • a feature of this invention comprises making coppcr-cuprous oxide type of conduction devices from commercial copper having a high degree of 7 purity to which has been added a small amount of other material, more particularly, lead oxide, thallium oxide or thallium.
  • Fig. 1 is a cross-sectional view of a copper-cuprous oxide rectifier in accordance with this invention.
  • Fig. 2 is a top plan view of the device of Fig. 1.
  • Such copper may have traces oi metallic impurities totalling about 0.04 per cent.
  • aclded to such copper when in the molten state, a small amount of lead oxide, thallium oxide or thallium.
  • the resulting material is formed into sheets of suitable thickness and blanks or washers formed therefrom.
  • the blanks may then be treated by various methods to produce metalmetal oxide rectifier units.
  • One such process comprises placing a blank I in a furnace having an, oxidizing atmosphere at about l000 centigrade for about ten minutes, then placing it in a second furnace maintained at about 500 centigrade for about three minutes and then quenching in cold water.
  • outside layer 2 which has been formed on the blank is then suitably treated to provide a low ohmic electrical contact surface thereon.
  • An asymmetrical conducting device comprising a metallic body. having an integral layer of an oxide of said body thereon, said body comprising copper to which has been added one of the materials of the group comprising lead oxide, thallium oxide and thallium.
  • a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of lead oxide.
  • a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of thallium oxide.
  • a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of thallium.
  • a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of lead monoxide.
  • a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of thallous oxide.
  • an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of one of the materials from the group comprising lead oxide, thallium oxide and thallium, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
  • an asymmetrical conducting device comprising a body substantially oi? copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of lead oxide, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
  • an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of thallium oxide, forming a body from the resulting melt and heat treating said body to form the oxide 5 layer thereon.
  • an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a m small amount, up to 0.55 per cent, of thallium,
  • an asymmetrical conducting device comprising a body substantial- 1y of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, 01' lead monoxide, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
  • an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of thallous oxide, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermistors And Varistors (AREA)
US234377A 1938-10-11 1938-10-11 Asymmetrical conductor Expired - Lifetime US2162362A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
BE475711D BE475711A (fr) 1938-10-11
NL65452D NL65452C (fr) 1938-10-11
US234377A US2162362A (en) 1938-10-11 1938-10-11 Asymmetrical conductor
GB19265/47A GB631041A (en) 1938-10-11 1947-07-18 Improvements in asymmetrical electrical conducting devices
FR949907D FR949907A (fr) 1938-10-11 1947-07-22 Conducteur dissymétrique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US234377A US2162362A (en) 1938-10-11 1938-10-11 Asymmetrical conductor

Publications (1)

Publication Number Publication Date
US2162362A true US2162362A (en) 1939-06-13

Family

ID=22881127

Family Applications (1)

Application Number Title Priority Date Filing Date
US234377A Expired - Lifetime US2162362A (en) 1938-10-11 1938-10-11 Asymmetrical conductor

Country Status (5)

Country Link
US (1) US2162362A (fr)
BE (1) BE475711A (fr)
FR (1) FR949907A (fr)
GB (1) GB631041A (fr)
NL (1) NL65452C (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2484252A (en) * 1944-11-07 1949-10-11 Bell Telephone Labor Inc Asymmetrical conductor
US2692212A (en) * 1950-02-09 1954-10-19 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2721966A (en) * 1950-06-22 1955-10-25 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2842470A (en) * 1953-02-03 1958-07-08 Degussa Process for increasing the scaling resistance of titanium base metals
US2942158A (en) * 1955-11-01 1960-06-21 Westinghouse Air Brake Co Copper alloys for asymmetrical conductors and copper oxide cells made therefrom
DE976691C (de) * 1949-08-26 1964-02-27 Int Standard Electric Corp Verfahren zur Herstellung von Trockengleichrichtern
US3246979A (en) * 1961-11-10 1966-04-19 Gen Electric Vacuum circuit interrupter contacts

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2484252A (en) * 1944-11-07 1949-10-11 Bell Telephone Labor Inc Asymmetrical conductor
DE976691C (de) * 1949-08-26 1964-02-27 Int Standard Electric Corp Verfahren zur Herstellung von Trockengleichrichtern
US2692212A (en) * 1950-02-09 1954-10-19 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2721966A (en) * 1950-06-22 1955-10-25 Westinghouse Brake & Signal Manufacture of dry surface contact rectifiers
US2842470A (en) * 1953-02-03 1958-07-08 Degussa Process for increasing the scaling resistance of titanium base metals
US2942158A (en) * 1955-11-01 1960-06-21 Westinghouse Air Brake Co Copper alloys for asymmetrical conductors and copper oxide cells made therefrom
US3246979A (en) * 1961-11-10 1966-04-19 Gen Electric Vacuum circuit interrupter contacts

Also Published As

Publication number Publication date
BE475711A (fr)
FR949907A (fr) 1949-09-13
NL65452C (fr)
GB631041A (en) 1949-10-26

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