US2162362A - Asymmetrical conductor - Google Patents
Asymmetrical conductor Download PDFInfo
- Publication number
- US2162362A US2162362A US234377A US23437738A US2162362A US 2162362 A US2162362 A US 2162362A US 234377 A US234377 A US 234377A US 23437738 A US23437738 A US 23437738A US 2162362 A US2162362 A US 2162362A
- Authority
- US
- United States
- Prior art keywords
- oxide
- copper
- per cent
- thallium
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 title description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 27
- 229910052802 copper Inorganic materials 0.000 description 27
- 239000010949 copper Substances 0.000 description 27
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 12
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 10
- 229940112669 cuprous oxide Drugs 0.000 description 10
- 229910000464 lead oxide Inorganic materials 0.000 description 9
- 229910052716 thallium Inorganic materials 0.000 description 9
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 9
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 description 8
- 229910003438 thallium oxide Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
- H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S420/00—Alloys or metallic compositions
- Y10S420/903—Semiconductive
Definitions
- This invention relates to electrical current conducting devices that oiTer a greater resistance to ilow-oi current in one direction than in the opposite direction and more particularly to such devices of the copper cuprous oxide type.
- An object of this invention is to improve the current-voltage characteristics of copper-cuprous oxide rectifiers by increasing the resistance in both the high and low current directions, the increase in the high current direction being for voltages up to about 1 -volt.
- a feature of this invention comprises making coppcr-cuprous oxide type of conduction devices from commercial copper having a high degree of 7 purity to which has been added a small amount of other material, more particularly, lead oxide, thallium oxide or thallium.
- Fig. 1 is a cross-sectional view of a copper-cuprous oxide rectifier in accordance with this invention.
- Fig. 2 is a top plan view of the device of Fig. 1.
- Such copper may have traces oi metallic impurities totalling about 0.04 per cent.
- aclded to such copper when in the molten state, a small amount of lead oxide, thallium oxide or thallium.
- the resulting material is formed into sheets of suitable thickness and blanks or washers formed therefrom.
- the blanks may then be treated by various methods to produce metalmetal oxide rectifier units.
- One such process comprises placing a blank I in a furnace having an, oxidizing atmosphere at about l000 centigrade for about ten minutes, then placing it in a second furnace maintained at about 500 centigrade for about three minutes and then quenching in cold water.
- outside layer 2 which has been formed on the blank is then suitably treated to provide a low ohmic electrical contact surface thereon.
- An asymmetrical conducting device comprising a metallic body. having an integral layer of an oxide of said body thereon, said body comprising copper to which has been added one of the materials of the group comprising lead oxide, thallium oxide and thallium.
- a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of lead oxide.
- a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of thallium oxide.
- a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of thallium.
- a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of lead monoxide.
- a copper-cuprous oxide rectifier formed from a copper body to which has been added up to 0.55 per cent of thallous oxide.
- an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of one of the materials from the group comprising lead oxide, thallium oxide and thallium, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
- an asymmetrical conducting device comprising a body substantially oi? copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of lead oxide, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
- an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of thallium oxide, forming a body from the resulting melt and heat treating said body to form the oxide 5 layer thereon.
- an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a m small amount, up to 0.55 per cent, of thallium,
- an asymmetrical conducting device comprising a body substantial- 1y of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, 01' lead monoxide, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
- an asymmetrical conducting device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, up to 0.55 per cent, of thallous oxide, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermistors And Varistors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE475711D BE475711A (de) | 1938-10-11 | ||
NL65452D NL65452C (de) | 1938-10-11 | ||
US234377A US2162362A (en) | 1938-10-11 | 1938-10-11 | Asymmetrical conductor |
GB19265/47A GB631041A (en) | 1938-10-11 | 1947-07-18 | Improvements in asymmetrical electrical conducting devices |
FR949907D FR949907A (fr) | 1938-10-11 | 1947-07-22 | Conducteur dissymétrique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US234377A US2162362A (en) | 1938-10-11 | 1938-10-11 | Asymmetrical conductor |
Publications (1)
Publication Number | Publication Date |
---|---|
US2162362A true US2162362A (en) | 1939-06-13 |
Family
ID=22881127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US234377A Expired - Lifetime US2162362A (en) | 1938-10-11 | 1938-10-11 | Asymmetrical conductor |
Country Status (5)
Country | Link |
---|---|
US (1) | US2162362A (de) |
BE (1) | BE475711A (de) |
FR (1) | FR949907A (de) |
GB (1) | GB631041A (de) |
NL (1) | NL65452C (de) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2484252A (en) * | 1944-11-07 | 1949-10-11 | Bell Telephone Labor Inc | Asymmetrical conductor |
US2692212A (en) * | 1950-02-09 | 1954-10-19 | Westinghouse Brake & Signal | Manufacture of dry surface contact rectifiers |
US2721966A (en) * | 1950-06-22 | 1955-10-25 | Westinghouse Brake & Signal | Manufacture of dry surface contact rectifiers |
US2842470A (en) * | 1953-02-03 | 1958-07-08 | Degussa | Process for increasing the scaling resistance of titanium base metals |
US2942158A (en) * | 1955-11-01 | 1960-06-21 | Westinghouse Air Brake Co | Copper alloys for asymmetrical conductors and copper oxide cells made therefrom |
DE976691C (de) * | 1949-08-26 | 1964-02-27 | Int Standard Electric Corp | Verfahren zur Herstellung von Trockengleichrichtern |
US3246979A (en) * | 1961-11-10 | 1966-04-19 | Gen Electric | Vacuum circuit interrupter contacts |
-
0
- NL NL65452D patent/NL65452C/xx active
- BE BE475711D patent/BE475711A/xx unknown
-
1938
- 1938-10-11 US US234377A patent/US2162362A/en not_active Expired - Lifetime
-
1947
- 1947-07-18 GB GB19265/47A patent/GB631041A/en not_active Expired
- 1947-07-22 FR FR949907D patent/FR949907A/fr not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2484252A (en) * | 1944-11-07 | 1949-10-11 | Bell Telephone Labor Inc | Asymmetrical conductor |
DE976691C (de) * | 1949-08-26 | 1964-02-27 | Int Standard Electric Corp | Verfahren zur Herstellung von Trockengleichrichtern |
US2692212A (en) * | 1950-02-09 | 1954-10-19 | Westinghouse Brake & Signal | Manufacture of dry surface contact rectifiers |
US2721966A (en) * | 1950-06-22 | 1955-10-25 | Westinghouse Brake & Signal | Manufacture of dry surface contact rectifiers |
US2842470A (en) * | 1953-02-03 | 1958-07-08 | Degussa | Process for increasing the scaling resistance of titanium base metals |
US2942158A (en) * | 1955-11-01 | 1960-06-21 | Westinghouse Air Brake Co | Copper alloys for asymmetrical conductors and copper oxide cells made therefrom |
US3246979A (en) * | 1961-11-10 | 1966-04-19 | Gen Electric | Vacuum circuit interrupter contacts |
Also Published As
Publication number | Publication date |
---|---|
BE475711A (de) | |
GB631041A (en) | 1949-10-26 |
FR949907A (fr) | 1949-09-13 |
NL65452C (de) |
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