US2124306A - Electrical device - Google Patents

Electrical device Download PDF

Info

Publication number
US2124306A
US2124306A US31892A US3189235A US2124306A US 2124306 A US2124306 A US 2124306A US 31892 A US31892 A US 31892A US 3189235 A US3189235 A US 3189235A US 2124306 A US2124306 A US 2124306A
Authority
US
United States
Prior art keywords
selenium
upper electrode
metal
heat treatment
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US31892A
Inventor
Osawa Juichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of US2124306A publication Critical patent/US2124306A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate

Definitions

  • This invention relates to electrical devices and in one aspect thereof to an improvement in a method of manufacturing a selenium' rectifying plate characterized in this that a metal having a melting point lower than the selenium is attached as an upper electrode to the surface of the selenium which had been activated, and that a special heat treatment is applied thereto from several minutes to several hours at a medium n temperature which is higher than the melting point of the upper electrode metal and lower than the melting point of the selenium.
  • the lower electrode may be of any suitable metal for use in selenium cells as disclosed in the prior 1
  • One object is to provide a method of manufacturing a selenium rectifylng plate which brings about a good rectifying layer between a m selenium and an upper electrode.
  • a metal ⁇ having a melting point lower than that of the selenium, that is 220 C., such as a tin-cadmium alloy and the like is employed as an upper electrode and it is proposedv to attach said alloy to the surface of the active selenium which had been applied upon the lower electrode as mentioned above by means of a blowing method and the like and then to give a special heat treatment thereto.
  • said heat treatment it is to 46 maintain said composition material from several minutes to several hours at a medium temperature which is higher than the melting temperature of said upper electrode metal and lower than the melting point of selenium or 220 C.
  • FIG. 1 schematically represents the sequence of steps of a preferred process
  • Fig. 2 illustrates in section the article produced thereby.
  • a method of manufacturing a selenium rectier having upper and lower metallic members which comprises applying selenium to the-lower member, activating the applied selenium by suitable heat treatment, attaching to the surface of the activated selenium said upper metallic member which has a melting point lower than that of the selenium, and subjecting said attached members to a heat treatment at a temperature intermediate the said melting points for a period of from several minutes to several hours.
  • the method of improving the operating characteristics of a selenium rectifying plate having an upper metal electrode separate from a lower electrode by selenium attached to the upper electrode which latter has a melting point lower than the selenium comprises subjecting the upper electrode with the attached selenium to a heat treatment at a temperature intermediate the melting points of said upper electrode and said selenium for a period of from several minutes to several hours.

Description

July 19, 1938..v J. osAwA ELECTRICAL DEVICE Filed July 17, 1935 FIG. I.
.SPRAY caer/N6 of' EL ffm/M Laws@ W/TA/ TIN-OHDM/UM naar wv/cw ,waz r6' .snow 220%,
if` x .SNTOR JUICH/ OSAWA ATTORNEY Patented July 1.9, 19738 UNITED 'STATES 2,124,306 l ELECTRICAL DEVICE Juichi Osawa, Shibaku,
Tokyo, Japan, assignor to International Standard Electric Corporation, New York, N. Y., a corporation of Delaware Application July 17,
In J
Claims.
This invention relates to electrical devices and in one aspect thereof to an improvement in a method of manufacturing a selenium' rectifying plate characterized in this that a metal having a melting point lower than the selenium is attached as an upper electrode to the surface of the selenium which had been activated, and that a special heat treatment is applied thereto from several minutes to several hours at a medium n temperature which is higher than the melting point of the upper electrode metal and lower than the melting point of the selenium. The lower electrode may be of any suitable metal for use in selenium cells as disclosed in the prior 1| art, for example, a metal or metal alloy of the iron group.
One object is to provide a method of manufacturing a selenium rectifylng plate which brings about a good rectifying layer between a m selenium and an upper electrode.
It is a well-known fact that the object which is provided with an upper electrode upon the surface of a lower electrode formed by applying selenium upon a metal plate and then by giving a suitable heat treatment to said metal plate to form so-called an active selenium presents a rectifying action. It is said that said rectifying action is caused by the influence of a layer which is produced between the upper electrode and the .0 surface of the selenium of a selenium electrode and heretofore various methods had been carried out as said upper electrode metal and method of attachment. For instance, one o f said methods is to press against the selenium a soft metal,
as a lead, or to blow a pewter thereupon. In this invention, a metal `having a melting point lower than that of the selenium, that is 220 C., such as a tin-cadmium alloy and the like is employed as an upper electrode and it is proposedv to attach said alloy to the surface of the active selenium which had been applied upon the lower electrode as mentioned above by means of a blowing method and the like and then to give a special heat treatment thereto. As said heat treatment, it is to 46 maintain said composition material from several minutes to several hours at a medium temperature which is higher than the melting temperature of said upper electrode metal and lower than the melting point of selenium or 220 C. In
50 the attached drawing Fig. 1 schematically represents the sequence of steps of a preferred process, and Fig. 2 illustrates in section the article produced thereby.
As the result of such heat treatment, it causes the decrease of a leakage current upon the manu- 1935, Serial No. 81,892
apan August 8, 1934 factured goods followed by the increase of a rectifying current and thus it is known that the rectifying characteristic is improved considerably. 'Ihis reason cannot be fully explained yet, but mainly as the result of said heat treatment the upper electrode metal being` once melted into a uid condition and again solidified, and hence it is considered that said effect is the result produced by making condition favorable for carrying the rectifying action into eect, the attachment against the selenium being made closer at that time, and the surface of the selenium being subjected to more or less change by said heat treatment at the same time.
It has been found by experiment, that as the result of the heat vtreatment of this invention the ratio of rectification had been increased from several times to several ten times comparedto a y well-known method.
What is claimed is:
1. A method of manufacturing a selenium rectier having upper and lower metallic members which comprises applying selenium to the-lower member, activating the applied selenium by suitable heat treatment, attaching to the surface of the activated selenium said upper metallic member which has a melting point lower than that of the selenium, and subjecting said attached members to a heat treatment at a temperature intermediate the said melting points for a period of from several minutes to several hours.
2. A method of manufacturing a selenium rectifier according to claim 1, which employs a tinnadmium alloy as an upper electrode.
3. The method of improving the operating characteristics of a selenium rectifying plate having upper and lower metal electrodes separated by selenium attached to the upper electrode which latter has a. melting point lower than the selenium, which method comprises subjecting said attached members to heat treatment at a temperature intermediate the melting points for a period of from several minutes to several hours.
4. The method of improving the operating characteristics of a selenium rectifying plate having an upper metal electrode separate from a lower electrode by selenium attached to the upper electrode which latter has a melting point lower than the selenium, which method comprises subjecting the upper electrode with the attached selenium to a heat treatment at a temperature intermediate the melting points of said upper electrode and said selenium for a period of from several minutes to several hours.
5. 'The method of manufacturing a selenium rectifying .plate having upper and lower metal electrodes separated by activated selenium carried by the lower and attached to the upper electrode, the melting point o! the selenium being higher than that of the upper electrode, which method includes the steps of subjecting said upper electrode with the attached selenium to a heat treatment at a medium temperature higher than the melting point of the upper electrode but lower than the melting point of the selenium for a period of from several minutes to several hours and thereafter cooling to solidify 5 said upper electrode.
JUICHI OSAWA.
US31892A 1934-08-08 1935-07-17 Electrical device Expired - Lifetime US2124306A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2124306X 1934-08-08

Publications (1)

Publication Number Publication Date
US2124306A true US2124306A (en) 1938-07-19

Family

ID=16622460

Family Applications (1)

Application Number Title Priority Date Filing Date
US31892A Expired - Lifetime US2124306A (en) 1934-08-08 1935-07-17 Electrical device

Country Status (1)

Country Link
US (1) US2124306A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2476800A (en) * 1946-05-07 1949-07-19 Westinghouse Electric Corp Rectifier
US2524270A (en) * 1945-09-27 1950-10-03 Sylvania Electric Prod Selenium rectifier
US2579557A (en) * 1947-12-11 1951-12-25 Westinghouse Electric Corp Counter electrode of selenium rectifiers
DE924875C (en) * 1944-06-10 1955-03-10 Siemens Ag Selenium rectifier with high thermal load capacity
DE925847C (en) * 1949-10-31 1955-03-31 Licentia Gmbh Method of manufacturing selenium rectifiers
DE946378C (en) * 1943-02-03 1956-08-02 Siemens Ag Process for the manufacture of selenium rectifiers
DE958583C (en) * 1939-11-14 1957-02-21 Siemens Ag Process for producing the semiconductor layer in dry rectifiers, in particular in selenium rectifiers
DE961733C (en) * 1939-01-17 1957-04-11 Aeg Process for producing electrically asymmetrically conductive elements with a semiconductor such as selenium
DE971650C (en) * 1944-09-28 1959-03-05 Siemens Ag Process for the manufacture of selenium rectifiers
US2887411A (en) * 1955-06-07 1959-05-19 Siemens Ag Method of producing selenium rectifiers
DE972120C (en) * 1950-09-24 1959-05-27 Siemens Ag Process for the production of a selenium rectifier of the free-form design

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE961733C (en) * 1939-01-17 1957-04-11 Aeg Process for producing electrically asymmetrically conductive elements with a semiconductor such as selenium
DE958583C (en) * 1939-11-14 1957-02-21 Siemens Ag Process for producing the semiconductor layer in dry rectifiers, in particular in selenium rectifiers
DE946378C (en) * 1943-02-03 1956-08-02 Siemens Ag Process for the manufacture of selenium rectifiers
DE924875C (en) * 1944-06-10 1955-03-10 Siemens Ag Selenium rectifier with high thermal load capacity
DE971650C (en) * 1944-09-28 1959-03-05 Siemens Ag Process for the manufacture of selenium rectifiers
US2524270A (en) * 1945-09-27 1950-10-03 Sylvania Electric Prod Selenium rectifier
US2476800A (en) * 1946-05-07 1949-07-19 Westinghouse Electric Corp Rectifier
US2579557A (en) * 1947-12-11 1951-12-25 Westinghouse Electric Corp Counter electrode of selenium rectifiers
DE925847C (en) * 1949-10-31 1955-03-31 Licentia Gmbh Method of manufacturing selenium rectifiers
DE972120C (en) * 1950-09-24 1959-05-27 Siemens Ag Process for the production of a selenium rectifier of the free-form design
US2887411A (en) * 1955-06-07 1959-05-19 Siemens Ag Method of producing selenium rectifiers

Similar Documents

Publication Publication Date Title
US2124306A (en) Electrical device
US3031747A (en) Method of forming ohmic contact to silicon
US2898528A (en) Silicon semiconductor device
DE1011082B (en) Crystal diode and process for its manufacture
US2195314A (en) Method of uniting metal objects
US2766509A (en) Titanium dioxide rectifier
DE1032405B (en) Surface semiconductor with good heat dissipation
US2193610A (en) Selenium contact electrode
US2745047A (en) Selenium rectifiers and method of manufacture
US2610386A (en) Semiconductive cell
US2982892A (en) Semiconductor device and method of making the same
US2162362A (en) Asymmetrical conductor
US3492719A (en) Evaporated metal contacts for the fabrication of silicon carbide devices
US2321523A (en) Method of reclaiming selenium elements
US3691433A (en) Alloyed metal oxide capacitor
DE898627C (en) Method of reducing the aging of selenium rectifiers
US2143824A (en) Asymmetrical conductor
US2221614A (en) Method of manufacturing selenium rectifiers
US1955564A (en) Electric current rectifier
DE1107343B (en) Method for manufacturing electrical semiconductor devices
DE2743061A1 (en) Prodn. of dry electrolyte capacitor with tantalum anode - involves pressed and sintered tantalum powder anode dipped in metal ions contg. soln. and thermally treated
US2718688A (en) Method of manufacturing dry rectifiers
US3240631A (en) Semiconductor device and method of fabricating the same
DE1041164B (en) Process for the production of electrically asymmetrically conductive systems with a semiconductor crystal
US1895439A (en) Hardening metal articles by nitrogenization