US20230067548A1 - Method of fabricating metal mask and metal mask - Google Patents
Method of fabricating metal mask and metal mask Download PDFInfo
- Publication number
- US20230067548A1 US20230067548A1 US17/547,446 US202117547446A US2023067548A1 US 20230067548 A1 US20230067548 A1 US 20230067548A1 US 202117547446 A US202117547446 A US 202117547446A US 2023067548 A1 US2023067548 A1 US 2023067548A1
- Authority
- US
- United States
- Prior art keywords
- metal mask
- metal
- blind hole
- section
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D5/00—Bending sheet metal along straight lines, e.g. to form simple curves
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0015—Production of aperture devices, microporous systems or stamps
-
- H01L27/1288—
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/143—Masks therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
-
- H01L27/124—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Definitions
- the present disclosure relates to a method of fabricating a metal mask and the metal mask.
- the display device has been used in a variety of applications.
- the display device includes various electrical components and wires connecting the electrical components.
- the wire can transmit signal to a thin film transistor (TFT) and apply a voltage to an electrode in the TFT.
- TFT thin film transistor
- the screen to body ratio of the display device is being increased.
- the narrow bezel display device has been developed and become popular in the market.
- the peripheral area of the narrow bezel display device is effectively utilized to form the wires for electrical connection between the electrical components disposed on different sides of the substrate.
- An aspect of the present disclosure provides a method of fabricating a metal mask.
- the method of fabricating the metal mask includes receiving a metal planar substrate and patterning the metal planar substrate.
- the metal planar substrate includes a first surface and a second surface opposite to the first surface.
- the patterning the metal planar substrate includes forming strip-shaped structures, forming through holes, and forming a blind hole in a direction from the first surface to the second surface.
- the through holes extend to the first surface and the second surface.
- the through holes and the strip-shaped structures are alternately arranged.
- the blind hole extends across the through holes.
- An aspect of the present disclosure provides a metal mask.
- the metal mask includes a first board portion, multiple strip-shaped structures and a first blind hole.
- the strip-shaped structures are connected to the first board portion and extend in a first direction. Two adjacent strip-shaped structures of the strip-shaped structures are spaced apart.
- the strip-shaped structures include a first section and a second section connecting the first board portion and the first section.
- the first blind hole is on a first surface of the strip-shaped structures and between the first section and the second section.
- the first blind hole is elongated and extends in a second direction substantially perpendicular to the first direction.
- FIG. 1 is a view of an intermediate stage of fabricating a metal mask according to some embodiments of the present disclosure.
- FIG. 2 A is a view of an intermediate stage of fabricating a metal mask according to some embodiments of the present disclosure.
- FIG. 2 B is a view of FIG. 2 A from another observation angle.
- FIG. 3 A is a view of an intermediate stage of fabricating a metal mask according to some embodiments of the present disclosure.
- FIG. 3 B is a view of FIG. 3 A from another observation angle.
- FIG. 4 A is a view of an intermediate stage of fabricating a metal mask according to some embodiments of the present disclosure.
- FIG. 4 B is a view of FIG. 4 A from another observation angle.
- FIG. 5 is a view of an intermediate stage of fabricating a metal mask according to some embodiments of the present disclosure.
- FIG. 6 is a cross-sectional view of a metal mask taken along line A-A shown in FIG. 5 according to some embodiments of the present disclosure.
- FIG. 7 to FIG. 9 are views of various intermediate stages of applying a metal mask shown in FIG. 5 according to some embodiments of the present disclosure.
- FIG. 10 A is a view of an intermediate stage of fabricating a metal mask according to some other embodiments of the present disclosure.
- FIG. 10 B is a view of FIG. 10 A from another observation angle.
- FIG. 11 A is a view of an intermediate stage of fabricating a metal mask according to some other embodiments of the present disclosure.
- FIG. 11 B is a view of FIG. 11 A from another observation angle.
- FIG. 12 A is a view of an intermediate stage of fabricating a metal mask according to some other embodiments of the present disclosure.
- FIG. 12 B is a view of FIG. 12 A from another observation angle.
- FIG. 13 is a view of an intermediate stage of fabricating a metal mask according to some other embodiments of the present disclosure.
- FIG. 14 is a cross-sectional of a metal mask taken along line B-B shown in FIG. 12 according to some other embodiments of the present disclosure.
- FIG. 15 to FIG. 18 are views of various intermediate stages of applying a metal mask shown in FIG. 13 according to some other embodiments of the present disclosure.
- first and second features are formed in direct contact
- additional features may be formed between the first and second features, such that the first and second features may not be in direct contact
- spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures.
- the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
- the apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- first, second and third does not necessarily imply a ranked sense of order, but rather may only distinguish between multiple instances of an act or structure. It will be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.
- the terms “about” and “substantially” can refer to a percentage of the values as interpreted by those skilled in relevant art(s) in light of the teachings herein.
- the terms “about” and “substantially” can indicate a value of a given quantity that varies within an acceptable deviation of the value. These values are merely examples and are not intended to be limiting.
- a wire formed at an edge of a substrate in the display device by using a conductive through hole, lithography techniques, or etching techniques can electrically connect various electrical components separately disposed on two opposite sides of a substrate.
- manufacturing the conductive through hole in the substrate may not be fully established in the fabrication of the display device, and a lithography process and/or an etching process may complicate the fabrication of the display device. As a result, the fabrication difficulty and cost may be increased.
- the present disclosure provides a metal mask and a method of fabricating thereof.
- a blind hole/a bending axis formed in the metal mask can facilitate an operation of bending the metal mask to turn the metal mask into a three-dimensional metal mask.
- the resulted three-dimensional metal mask can be used to form wires at the edge of a substrate for electrical connection between the electrical components which are separately disposed on two opposite sides of the substrate.
- FIG. 1 , FIG. 2 A , FIG. 3 A , FIG. 4 A and FIG. 5 are views of various intermediate stages of fabricating a metal mask according to some embodiments of the present disclosure.
- Various operations of embodiments are provided herein. The order in which some or all of the operations are described should not be construed to imply that these operations are necessarily order dependent. Alternative ordering will be appreciated having the benefit of this description. Additional operations can be provided before, during, and/or after the operations disclosed herein, and may be briefly described herein. Further, it will be understood that not all operations are necessarily present in each embodiment provided herein. Also, it will be understood that not all operations are necessary in some embodiments.
- FIG. 2 B , FIG. 3 B and FIG. 4 B are views from an observation angle of inverted FIG. 2 A , FIG. 3 A and FIG. 4 A , respectively.
- FIG. 1 illustrates step S 10 of receiving a metal planar substrate 100 .
- the metal planar substrate 100 can include a first surface S 1 (e.g., parallel to the xy plane) and a second surface S 2 opposite to the first surface S 1 .
- the metal planar substrate 100 includes metal.
- the metal planar substrate 100 may include Cu, Ni, Fe, Co, Sn, Cr, Ti, Al, other suitable metal, an alloy of the above-mentioned metal, or a combination thereof.
- the metal planar substrate 100 can include Ni.
- the metal planar substrate 100 can include stainless steel.
- the metal planar substrate 100 can include a thickness T 1 , which is related to a thickness of a metal mask formed later.
- the thickness T 1 may be between about 20 micrometers ( ⁇ m) and about 150 ⁇ m. If the thickness T 1 is greater than the above-noted upper limits, the difficulty and cost may be increased in the subsequent processes (e.g., in an etching process). If the thickness T 1 is less than the above-noted lower limits, handling the metal mask may become challenging. For example, the metal layer with undesirably thin thickness may require precise operation and gentle treatment to ensure an intact profile of the metal layer.
- the thickness T 1 of the metal planar substrate 100 can be a uniform thickness.
- the metal planar substrate 100 can be patterned to form the metal planar substrate 100 into a predetermined structure.
- the operations of pattering the metal planar substrate 100 are described in FIG. 2 A to FIG. 4 B .
- FIG. 2 A and FIG. 2 B illustrate step S 12 of performing a lithography process to form a first pattern P 1 on the first surface S 1 , a second pattern P 2 on the first surface S 1 and a third pattern P 3 on the second surface S 2 .
- a photoresist 200 is firstly formed on the first surface S 1 and the second surface S 2 of the metal planar substrate 100 .
- the photoresist 200 can be formed by spin coating, dry film lamination or other suitable techniques.
- an exposure process through a mask not illustrated herein
- a development process can be performed on the photoresist 200 to form the patterned photoresist 200 with the first pattern P 1 , the second pattern P 2 and the third pattern P 3 .
- a portion of the metal planar substrate 100 can be exposed in the first pattern P 1 , the second pattern P 2 and the third pattern P 3 .
- the first pattern P 1 and the second pattern P 2 are on the first surface S 1
- the third pattern P 3 is on the second surface S 2
- the first pattern P 1 can be elongated and extend in a first direction (e.g., extend along the x axis).
- the second pattern P 2 can be elongated and extend in a second direction which may be perpendicular to the first direction (e.g., extend along the y axis).
- the third pattern P 3 can be designed to correspond to the first pattern P 1 .
- an arrangement of the third pattern P 3 can be substantially the same as an arrangement of the first pattern P 1 .
- a projection of the first pattern P 1 on the second surface S 2 can overlap the third pattern P 3 on the second surface S 2 .
- the third pattern P 3 can also be elongated and extend in the first direction (e.g., extend along the x axis).
- the dashed lines illustrated in FIG. 2 B indicate a projection of the second pattern P 2 on the second surface S 2 .
- the first pattern P 1 and the third pattern P 3 can individually include 4 elongated openings.
- the arrangement of the first pattern P 1 and the arrangement of the third pattern P 3 can be adjusted based on various process requirements or product designs, and therefore the present disclosure is not limited to the shape (e.g., elongated) or the number (e.g., 4) of openings.
- the second pattern P 2 can include 2 elongated openings as shown in FIG. 2 A , but the present disclosure is not limited to the shape (e.g., elongated) or the number (e.g., 2) of openings.
- FIG. 3 A and FIG. 3 B illustrate step S 14 of performing an etching process to remove the portion of the metal planar substrate exposed in the first pattern P 1 , the second pattern P 2 and the third pattern P 3 .
- Multiple through holes 300 may be formed by etching the metal planar substrate 100 through the first pattern P 1 and the third pattern P 3 .
- a first blind hole 302 and a second blind hole 304 may be formed in the metal planar substrate 100 by etching the metal planar substrate 100 through the second pattern P 2 .
- etchants can concurrently etch the metal planar substrate 100 from the first surface S 1 through the first pattern P 1 and from the second surface S 2 through the third pattern P 3 , thereby forming the through holes 300 extending to the first surface S 1 and the second surface S 2 .
- the etchants can etch the metal planar substrate 100 from the first surface S 1 through the second pattern P 2 to recess the first surface S 1 of the metal planar substrate 100 , thereby forming the first blind hole 302 and the second blind hole 304 in the first surface S 1 .
- the thickness T 1 of the metal planar substrate 100 may be reduced by at least about 25%.
- about 25% of thickness T 1 , about 50% of thickness T 1 , or other suitable amount of thickness T 1 may be removed off.
- a removal amount for forming the first blind hole 302 or the second blind hole 304 can be about 25% of the thickness T 1 .
- a depth D 1 of the first blind hole 302 and the second blind hole 304 may be about 25% of the thickness T 1 .
- a pattern of the through holes 300 can correspond to the first pattern P 1 and the third pattern P 3 . Therefore, the through holes 300 can be elongated and extend in the first direction (e.g., extend along the x axis).
- a pattern of the first blind hole 302 and the second blind hole 304 can correspond to the second pattern P 2 . Therefore, the first blind hole 302 and the second blind hole 304 can be elongated and extend in the second direction which is substantially perpendicular to the first direction (e.g., extend along the y axis).
- the first blind hole 302 and the second blind hole 304 may be designed to be parallel to each other.
- an individual width of the first blind hole 302 or the second blind hole 304 may be less than an individual width of the through holes 300 (e.g., a dimension along the y axis).
- the present disclosure is not limited to the above description about performing the lithography process and the etching process on the double sides (e.g., the first surface S 1 and the second surface S 2 ) of the metal planar substrate 100 .
- the lithography process can be performed on the single side (e.g., the first surface S 1 ) of the metal planar substrate 100 to form the patterned photoresist 200 with the first pattern P 1 and the second pattern P 2 on the first surface S 1 of the metal planar substrate 100 .
- step 14 in the case of the patterned photoresist 200 disposed on the single side (e.g., the first surface S 1 ) of the metal planar substrate 100 , the etching process can be performed on the metal planar substrate 100 from the first surface S 1 through the first pattern P 1 to form the through holes 300 as well as through the second pattern P 2 to form the first blind hole 302 and the second blind hole 304 .
- FIG. 4 A and FIG. 4 B illustrate step S 16 of removing the photoresist 200 .
- the patterned metal planar substrate 100 can become a metal mask 400 .
- the metal mask 400 can have multiple strip-shaped structures 402 , a board portion 404 including a first board portion 404 - 1 and a second board portion 404 - 2 , the first blind hole 302 , and the second blind hole 304 .
- the strip-shaped structures 402 can extend in the first direction (e.g., extend along the x axis) and connect the first board portion 404 - 1 and the second board portion 404 - 2 .
- the first blind hole 302 and the second blind hole 304 can be disposed in the first surface S 1 and can be a recess in a direction from the first surface S 1 to the second surface S 2 .
- the first blind hole 302 and the second blind hole 304 can be elongated extending in the second direction which may be substantially perpendicular to the first direction (e.g., extend along the y axis) and across the strip-shaped structures 402 .
- the strip-shaped structures 402 can be formed as soon as the through holes 300 (see FIG. 3 A ) are formed.
- the through holes 300 and the strip-shaped structures 402 can be alternately arranged. In other words, two adjacent strip-shaped structures 402 can be spaced apart by the through holes 300 .
- the through holes 300 defined by the first pattern P 1 and the third pattern P 3 can determine an arrangement of the strip-shaped structures 402 .
- the strip-shaped structures 402 may include a first section 402 - 1 , a second section 402 - 2 and a third section 402 - 3 .
- the first section 402 - 1 may be between and connect the second section 402 - 2 and the third section 402 - 3 .
- the second section 402 - 2 may connect the first board portion 404 - 1 and the first section 402 - 1
- the third section 402 - 3 may connect the second board portion 404 - 2 and the first section 402 - 1 .
- the first blind hole 302 may be between the first section 402 - 1 and the second section 402 - 2
- the second blind hole 304 may be between the first section 402 - 1 and the third section 402 - 3 .
- a thickness T 2 of the strip-shaped structures 402 may be uniform.
- the thickness T 2 of the strip-shaped structures 402 may substantially be the same as the thickness T 1 (see FIG. 1 ) of the metal planar substrate 100 .
- the thickness T 2 of the strip-shaped structures 402 can be between about 20 ⁇ m and about 150 ⁇ m.
- the first blind hole 302 may be positioned between the first section 402 - 1 and the second section 402 - 2
- the second blind hole 304 may be positioned between the first section 402 - 1 and the third section 402 - 3 .
- the depth D 1 from the first surface S 1 to form the first blind hole 302 and the second blind hole 304 may be at least about 25% of the thickness T 2 of the strip-shaped structures 402 . That is, the thickness T 2 of the strip-shaped structures 402 can be about 1 time to about 4 times the depth D 1 from the first surface S 1 to form the first blind hole 302 and the second blind hole 304 .
- the depth D 1 of the first blind hole 302 and the second blind hole 304 can be about 50% of the thickness T 2 of the strip-shaped structures 402 , meaning the thickness T 2 of the strip-shaped structures 402 can be about twice the depth D 1 of the first blind hole 302 and the second blind hole 304 .
- first blind hole 302 and the second blind hole 304 can respectively be used as a first bending axis 302 and a second bending axis 304 to bend the metal mask 400 . A greater detail will be described later with reference of FIG. 5 .
- the first section 402 - 1 may be positioned between the first bending axis 302 and the second bending axis 304
- the first board portion 404 - 1 and the second section 402 - 2 may be positioned next to a side of the first bending axis 302
- the second board portion 404 - 2 and the third section 402 - 3 may be positioned next to a side of the second bending axis 304 .
- FIG. 5 illustrates step 18 of using the first blind hole 302 and the second blind hole 304 as the first bending axis 302 and the second bending axis 304 to bend the metal mask 400 such that the metal mask 400 can become three-dimensional.
- the metal mask 400 illustrated in FIG. 4 A can be bent along a bending direction R to form the three-dimensional metal mask 400 . Consequently, the second surface S 2 may become an outer surface and the first surface S 1 may become an inner surface.
- FIG. 6 illustrates a cross-sectional view of the metal mask 400 in a three-dimensional profile taken along line A-A shown in FIG. 5 according to some embodiments of the present disclosure.
- the second section 402 - 2 and the third section 402 - 3 may face each other, and the first board portion 404 - 1 and the second board portion 404 - 2 may face each other.
- a first angle ⁇ 1 is formed by the first section 402 - 1 and the second section 402 - 2
- a second angle ⁇ 2 is formed by the first section 402 - 1 and the third section 402 - 3 .
- first board portion 404 - 1 and the second board portion 404 - 2 can be parallel to each other.
- first section 402 - 1 , the second section 402 - 2 and the third section 402 - 3 may collectively form a C-shaped structure in a cross-sectional view of the three-dimensional metal mask 400 .
- FIG. 7 to FIG. 9 are views of various intermediate stages of applying the metal mask 400 in the three-dimensional profile illustrated in FIG. 5 according to some embodiments of the present disclosure.
- the metal mask 400 in the three-dimensional profile is used to form wires at the edge of a slab-shaped substrate.
- Various operations of embodiments are provided herein. The order in which some or all of the operations are described should not be construed to imply that these operations are necessarily order dependent. Alternative ordering will be appreciated having the benefit of this description. Additional operations can be provided before, during, and/or after these operations in FIG. 7 to FIG. 9 , and may be briefly described herein. Further, it will be understood that not all operations are necessarily present in each embodiment provided herein. Also, it will be understood that not all operations are necessary in some embodiments.
- FIG. 7 illustrates step A 10 of receiving a slab-shaped substrate 700 and disposing the metal mask 400 in the three-dimensional profile at the edge of the slab-shaped substrate 700 .
- the board portion 404 of the metal mask 400 can directly contact a third surface S 3 and a fourth surface S 4 of the slab-shaped substrate 700 .
- the third surface S 3 and the fourth surface S 4 are opposite to each other and may be parallel to the xy plane.
- the strip-shaped structures 402 of the metal mask 400 can directly contact the third surface S 3 , the fourth surface S 4 and a fifth surface S 5 .
- the fifth surface S 5 connects the third surface S 3 and the fourth surface S 4 , and may be parallel to the yz plane.
- the three-dimensional profile of the metal mask 400 is designed to be consistent with a profile of the slab-shaped substrate 700 , thereby allowing the three-dimensional metal mask 400 to fit an edge area of the slab-shaped substrate 700 .
- a width W 1 of the slab-shaped substrate 700 can substantially be the same as a length of the first section 402 - 1 of the strip-shaped structures 402 .
- FIG. 8 illustrates step A 12 of forming a metal material 800 on an exposed portion of the slab-shaped substrate 700 without the metal mask 400 covered.
- the metal material 800 can be formed between each of the strip-shaped structures 402 .
- a thickness of the metal material 800 may be less than a thickness of the metal mask 400 (e.g. the thickness T 2 shown in FIG. 4 A ).
- a mask (not illustrated here) may be used to cover some other portions of the slab-shaped substrate 700 to avoid the metal material 800 from appearing thereon.
- the metal material 800 can be formed by a sputtering process, an evaporation process, or any suitable process.
- the metal material 800 may be formed not only on the exposed portion of the slab-shaped substrate 700 but also on the metal mask 400 .
- FIG. 8 is simplified by omitting to illustrate a portion of the metal material 800 on the metal mask 400 .
- the metal mask 400 may not be changed with temperature in terms of structure such as expansion or contraction of volume during a process of forming the metal material 800 by the sputtering process, the evaporation process or the like. Therefore, the metal mask 400 can remain original arrangement, thereby ensuring process stability of forming the metal material 800 and further increasing reliability of metal wires formed later (e.g., metal wires 900 in below FIG. 9 ).
- FIG. 9 illustrates step A 14 of removing the metal mask 400 such that the remaining metal material 900 can become the metal wires 900 at the edge of the slab-shaped substrate 700 .
- the metal wires 900 can extend on the third surface S 3 , the fourth surface S 4 and the fifth surface S 5 continuously.
- the metal wires 900 can electrically connect various electrical components (not illustrated here) separately disposed on the third surface S 3 and fourth surface S 4 . With the metal mask 400 , the metal wires 900 can be formed at the edge of the slab-shaped substrate 700 in a convenient way.
- FIG. 10 A , FIG. 11 A , FIG. 12 A and FIG. 13 are views of various intermediate stages of fabricating a metal mask with another structure according to some other embodiments of the present disclosure.
- FIG. 10 B , FIG. 11 B and FIG. 12 B are views from an observation angle of inverted FIG. 10 A , FIG. 11 A and FIG. 12 A , respectively.
- Operations for fabricating the metal mask with another structure can be similar to the operations for fabricating the metal mask 400 as above-mentioned description.
- step S 22 discussed later in FIG. 10 A can be similar to step S 12 discussed in FIG. 2 A
- step S 24 discussed later in FIG. 11 A can be similar to step S 14 discussed in FIG. 3 A
- step S 12 A can be similar to step S 16 discussed in FIG. 4 A
- step S 28 discussed later in FIG. 13 can be similar to step S 18 discussed in FIG. 5
- step S 10 discussed in FIG. 1 can be directly implemented in the operations for fabricating the metal mask with another structure. Therefore, no further discussions are elaborated for step S 10 .
- FIG. 10 A A , FIG. 11 A , FIG. 12 A and FIG. 13 , and may be briefly described herein. Further, it will be understood that not all operations are necessarily present in each embodiment provided herein. Also, it will be understood that not all operations are necessary in some embodiments.
- FIG. 10 A and FIG. 10 B illustrate step S 22 of performing a lithography process to form a fourth pattern P 4 on the first surface S 1 , a fifth pattern P 5 on the first surface S 1 and a sixth pattern P 6 on the second surface S 2 .
- a photoresist 1000 is firstly formed on the first surface S 1 and the second surface S 2 of the metal planar substrate 100 .
- Methods for forming the photoresist 1000 , the fourth pattern P 4 , the fifth pattern P 5 and the sixth pattern P 6 can be similar to previous discussion in FIG. 2 A and FIG. 2 B , and therefore no further description is elaborated here.
- a portion of the metal planar substrate 100 can be exposed in the fourth pattern P 4 , the fifth pattern P 5 and the sixth pattern P 6 .
- the fourth pattern P 4 and the fifth pattern P 5 are on the first surface S 1
- the sixth pattern P 6 is on the second surface S 2
- the fourth pattern P 4 may be similar to the first pattern P 1 illustrated in FIG. 2 A .
- the fourth pattern P 4 can be elongated and extend in the first direction (e.g., extend along the x axis) until an edge of the metal planar substrate 100 .
- the fifth pattern P 5 may be similar to the second pattern P 2 illustrated in FIG. 2 A .
- the fifth pattern P 5 can be elongated and extend in the second direction which may be perpendicular to the first direction (e.g., extend along the y axis).
- the sixth pattern P 6 may be similar to the third pattern P 3 illustrated in FIG. 2 B .
- the sixth pattern P 6 can be designed to correspond to the fourth pattern P 4 .
- an arrangement of the sixth pattern P 6 can be substantially the same as an arrangement of the fourth pattern P 4 .
- a projection of the fourth pattern P 4 on the second surface S 2 can overlap the sixth pattern P 6 on the second surface S 2 .
- the sixth pattern P 6 can also be elongated and extend in the first direction (e.g., extend along the x axis) until the edge of the metal planar substrate 100 .
- the dashed lines illustrated in FIG. 10 B indicate a projection of the fifth pattern P 5 on the second surface S 2 .
- the fifth pattern P 5 may include less elongated openings than the second pattern P 2 illustrated in 2A.
- FIG. 11 A and FIG. 11 B illustrate step S 24 of performing an etching process to remove the portion of the metal planar substrate exposed in the fourth pattern P 4 , the fifth pattern P 5 and the sixth pattern P 6 .
- Multiple through holes 1100 may be formed by etching the metal planar substrate 100 through the fourth pattern P 4 and the sixth pattern P 6 .
- a blind hole 1102 may be formed in the metal planar substrate 100 by etching the metal planar substrate 100 through the fifth pattern P 5 .
- etchants can concurrently etch the metal planar substrate 100 from the first surface S 1 through the fourth pattern P 4 and from the second surface S 2 through the sixth pattern P 6 , thereby forming the through holes 1100 extending to the first surface S 1 and the second surface S 2 .
- the etchants can etch the metal planar substrate 100 from the first surface S 1 through the fifth pattern P 5 to recess the first surface S 1 of the metal planar substrate 100 , thereby forming the blind hole 1102 in the first surface S 1 .
- the thickness T 1 of the metal planar substrate 100 may be reduced by at least about 25%.
- about 25% of thickness T 1 , about 50% of thickness T 1 , or other suitable amount of thickness T 1 may be removed off.
- a removal amount for forming the blind hole 1102 can be about 25% of the thickness T 1 .
- a depth D 2 of the blind hole 1102 may be about 25% of the thickness T 1 .
- a pattern of the through holes 1100 can correspond to the fourth pattern P 4 and the sixth pattern P 6 . Therefore, the through holes 1100 can be elongated and extend in the first direction (e.g., extend along the x axis) until the edge of the metal planar substrate 100 .
- a pattern of the blind hole 1102 can correspond to the fifth pattern P 5 . Therefore, the blind hole 1102 can be elongated and extend in the second direction which is substantially perpendicular to the first direction (e.g., extend along the y axis).
- a width of the blind hole 1102 e.g., a dimension along the x axis
- FIG. 12 A and FIG. 12 B illustrate step S 26 of removing the photoresist 1000 .
- the patterned metal planar substrate 100 can become a metal mask 1200 .
- the metal mask 1200 can have multiple strip-shaped structures 1202 , a board portion 1204 , and the blind hole 1102 .
- the strip-shaped structures 1202 can be connected to the board portion 1204 and extend in the first direction (e.g., extend along the x axis). One end of the strip-shaped structures 1202 may be at an edge of the metal mask 1200 .
- the blind hole 1102 can be disposed in the first surface S 1 and can be a recess in a direction from the first surface S 1 to the second surface S 2 .
- the blind hole 1102 can be elongated extending in the second direction which may be substantially perpendicular to the first direction (e.g., extend along the y axis) and across the strip-shaped structures 1202 .
- the strip-shaped structures 1202 can be formed once the through holes 1100 (see FIG. 11 A ) are formed.
- the through holes 1100 and the strip-shaped structures 1202 can be alternately arranged. In other words, two adjacent strip-shaped structures 1202 can be spaced apart by the through holes 1100 .
- the through holes 1100 defined by the fourth pattern P 4 and the sixth pattern P 6 can determine an arrangement of the strip-shaped structures 1202 .
- the strip-shaped structures 1202 may include a first section 1202 - 1 , a second section 1202 - 2 and a third section 1202 - 3 .
- the second section 1202 - 2 may connect the board portion 1204 and the first section 1202 - 1 .
- the blind hole 1402 may be between the first section 1202 - 1 and the second section 1202 - 2 .
- a thickness T 3 of the strip-shaped structures 1202 may be uniform.
- the thickness T 3 of the strip-shaped structures 1202 may substantially be the same as the thickness T 1 (see FIG. 1 ) of the metal planar substrate 100 .
- the thickness T 3 of the strip-shaped structures 1202 can be between about 20 ⁇ m and about 150 ⁇ m.
- the blind hole 1102 may be positioned between the first section 1202 - 1 and the second section 1202 - 2 .
- the depth D 2 from the first surface S 1 to form the blind hole 1102 may be at least about 25% of the thickness T 3 of the strip-shaped structures 1202 . That is, the thickness T 3 of the strip-shaped structures 1202 can be about 1 time to about 4 times the depth D 2 from the first surface S 1 to form the blind hole 1102 .
- the depth D 2 of the blind hole 1102 can be about 50% of the thickness T 3 of the strip-shaped structures 1202 , meaning the thickness T 3 of the strip-shaped structures 1202 can be about twice the depth D 2 of the blind hole 1102 .
- the blind hole 1102 can be used as a bending axis 1102 to bend the metal mask 1200 .
- the board portion 1204 and the second section 1202 - 2 may be positioned next to a first side of the bending axis 1102
- the first section 1202 - 1 may be positioned next to a second side of the bending axis 1102 , where the first side and the second side are opposite to each other.
- FIG. 5 illustrates step 28 of using the blind hole 1102 as the bending axis 1102 to bend the metal mask 1200 such that the metal mask 1200 can become three-dimensional.
- the metal mask 1200 illustrated in FIG. 12 A can be bent along a bending direction R to form the three-dimensional metal mask 1200 .
- FIG. 14 illustrates a cross-sectional view of the metal mask 1200 in a three-dimensional profile taken along line B-B shown in FIG. 13 according to some embodiments of the present disclosure.
- a third angle ⁇ 3 is formed by the first section 1202 - 1 and the second section 1202 - 2 .
- the first section 1202 - 1 and the second section 1202 - 2 may collectively form an L-shaped structure in a cross-sectional view of the three-dimensional metal mask 1200 .
- FIG. 15 to FIG. 18 are views of various intermediate stages of applying the metal mask 1200 in the three-dimensional profile illustrated in FIG. 13 according to some embodiments of the present disclosure.
- the metal mask 1200 in the three-dimensional profile is used to form wires at the edge of a slab-shaped substrate.
- Various operations of embodiments are provided herein. The order in which some or all of the operations are described should not be construed to imply that these operations are necessarily order dependent. Alternative ordering will be appreciated having the benefit of this description. Additional operations can be provided before, during, and/or after these operations in FIG. 15 to FIG. 18 , and may be briefly described herein. Further, it will be understood that not all operations are necessarily present in each embodiment provided herein. Also, it will be understood that not all operations are necessary in some embodiments.
- FIG. 15 illustrates step A 20 of receiving the slab-shaped substrate 700 and disposing the metal mask 1200 in the three-dimensional profile at the edge of the slab-shaped substrate 700 .
- the board portion 1204 of the metal mask 1200 can directly contact the third surface S 3 of the slab-shaped substrate 700 .
- the third surface S 3 may be parallel to the xy plane.
- the strip-shaped structures 1202 of the metal mask 1200 can directly contact the third surface S 3 and the fifth surface S 5 .
- the fifth surface S 5 may be parallel to the yz plane.
- the three-dimensional profile of the metal mask 1200 is designed to be consistent with a profile of the slab-shaped substrate 700 , thereby allowing the three-dimensional metal mask 1200 to fit the edge area of the slab-shaped substrate 700 .
- the width W 1 of the slab-shaped substrate 700 can substantially be the same as a length of the first section 1202 - 1 of the strip-shaped structures 1202 .
- FIG. 16 illustrates step A 22 of forming a first metal material 1600 on an exposed portion of the slab-shaped substrate 700 without the metal mask 1200 covered.
- the first metal material 1600 may be formed on the third surface S 3 and the fifth surface S 5 of the slab-shaped substrate 700 .
- the first metal material 1600 can be formed between each of the strip-shaped structures 1202 .
- a thickness of the first metal material 1600 may be less than a thickness of the metal mask 1200 (e.g. the thickness T 3 shown in FIG. 12 A ).
- a mask (not illustrated here) may be used to cover some other portions of the slab-shaped substrate 700 to avoid the first metal material 1600 from appearing thereon.
- the first metal material 1600 can be formed by a sputtering process, an evaporation process, or any suitable process. It is noted that, in an actual operation, the first metal material 1600 may be formed not only on the exposed portion of the slab-shaped substrate 700 but also on the metal mask 1200 . For clarity, FIG. 16 is simplified by omitting to illustrate a portion of the first metal material 1600 on the metal mask 1200 .
- FIG. 17 illustrates step A 23 of inverting the metal mask 1200 in FIG. 16 and then disposing the metal mask 1200 at the same edge of the slab-shaped substrate 700 .
- the board portion 1204 of the metal mask 1200 can directly contact the fourth surface S 4 of the slab-shaped substrate 700 .
- the strip-shaped structures 1202 of the metal mask 1200 can directly contact the fourth surface S 4 as well as the fifth surface S 5 .
- a location on the fifth surface S 5 where the metal mask 1200 is disposed can be corresponding aligned with a location on the fifth surface S 5 where the first metal material 1600 is formed.
- the first metal material 1600 and the strip-shaped structures 1202 are alternately disposed on the fifth surface S 5 can be observed after the metal mask 1200 is disposed at the same edge of the slab-shaped substrate 700 .
- a second metal material 1700 can be formed on an exposed portion of the slab-shaped substrate 700 without the metal mask 1200 covered.
- the second metal material 1700 can be formed on the fourth surface S 4 and the fifth surface S 5 .
- the second metal material 1700 can be formed between each of the strip-shaped structures 1202 .
- a thickness of the second metal material 1700 may be less than a thickness of the metal mask 1200 (e.g. the thickness T 3 shown in FIG. 12 A ).
- a mask (not illustrated here) may be used to cover some other portions of the slab-shaped substrate 700 to avoid the second metal material 1700 from appearing thereon.
- the second metal material 1700 can be formed by a sputtering process, an evaporation process, or any suitable process. It is noted that, in an actual operation, the second metal material 1700 may be formed not only on the exposed portion of the slab-shaped substrate 700 but also on the metal mask 1200 . For clarity, FIG. 17 is simplified by omitting to illustrate a portion of the second metal material 1700 on the metal mask 1200 .
- the above-mentioned metal material can be a double-layer stack including the first metal material 1600 and the second metal material 1700 .
- a thickness of the above-mentioned double-layer stack may be less than a thickness of the metal mask 1200 (e.g. the thickness T 3 shown in FIG. 12 A ).
- FIG. 18 illustrates step A 24 of removing the metal mask 1200 such that the first metal material 1600 and the second metal material 1700 are remained and can collectively become metal wires 1800 at the edge of the slab-shaped substrate 700 .
- the metal wires 1800 can extend on the third surface S 3 , the fourth surface S 4 and the fifth surface S 5 continuously.
- the metal wires 1800 can electrically connect various electrical components (not illustrated here) separately disposed on the third surface S 3 and fourth surface S 4 .
- a thickness of the metal wires 1800 on the fifth surface S 5 may be greater than a thickness of the metal wires 1800 either on the third surface S 3 or the fourth surface S 4 . In some embodiments, the thickness of the metal wires 1800 on the fifth surface S 5 may be about twice the thickness of the metal wires 1800 on the third surface S 3 or the fourth surface S 4 .
- the present disclosure discloses various embodiments to provide a metal mask and a method of fabricating thereof.
- a metal mask can be formed through a more convenient process.
- a bending axis formed in the metal mask can facilitate an operation of bending the metal mask to turn the metal mask into a three-dimensional metal mask.
- the resulted three-dimensional metal mask can fit an edge area of a slab-shape substrate.
- metal wires can be formed on three surfaces near the edge area of the slab-shape substrate to electrically connect various electrical components separately disposed on two opposite sides of the slab-shaped substrate. Therefore, using the metal mask during forming the metal wires near the edge area of the slab-shaped substrate can simplify fabrication process and reduce process cost.
- the metal mask disclosed in the present disclosure can be made of metal. Due to a lower coefficient of heat expansion of the metal than other materials (e.g., polymer), the metal mask may be capable of a wide range of operation temperature and better process reliability when the metal mask is used in a process related to heating or change of temperature.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
- This application claims priority to Taiwan Application Serial Number 110131683, filed Aug. 26, 2021, which is herein incorporated by reference in its entirety.
- The present disclosure relates to a method of fabricating a metal mask and the metal mask.
- The display device has been used in a variety of applications. The display device includes various electrical components and wires connecting the electrical components. For example, the wire can transmit signal to a thin film transistor (TFT) and apply a voltage to an electrode in the TFT. In response to the market demand, the screen to body ratio of the display device is being increased.
- Therefore, the narrow bezel display device has been developed and become popular in the market. The peripheral area of the narrow bezel display device is effectively utilized to form the wires for electrical connection between the electrical components disposed on different sides of the substrate.
- An aspect of the present disclosure provides a method of fabricating a metal mask. The method of fabricating the metal mask includes receiving a metal planar substrate and patterning the metal planar substrate. The metal planar substrate includes a first surface and a second surface opposite to the first surface. The patterning the metal planar substrate includes forming strip-shaped structures, forming through holes, and forming a blind hole in a direction from the first surface to the second surface. The through holes extend to the first surface and the second surface. The through holes and the strip-shaped structures are alternately arranged. The blind hole extends across the through holes.
- An aspect of the present disclosure provides a metal mask. The metal mask includes a first board portion, multiple strip-shaped structures and a first blind hole. The strip-shaped structures are connected to the first board portion and extend in a first direction. Two adjacent strip-shaped structures of the strip-shaped structures are spaced apart. The strip-shaped structures include a first section and a second section connecting the first board portion and the first section. The first blind hole is on a first surface of the strip-shaped structures and between the first section and the second section. The first blind hole is elongated and extends in a second direction substantially perpendicular to the first direction.
- It is to be understood that both the foregoing general description and the following detailed description are by examples, and are intended to provide further explanation of the disclosure as claimed.
- Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
-
FIG. 1 is a view of an intermediate stage of fabricating a metal mask according to some embodiments of the present disclosure. -
FIG. 2A is a view of an intermediate stage of fabricating a metal mask according to some embodiments of the present disclosure. -
FIG. 2B is a view ofFIG. 2A from another observation angle. -
FIG. 3A is a view of an intermediate stage of fabricating a metal mask according to some embodiments of the present disclosure. -
FIG. 3B is a view ofFIG. 3A from another observation angle. -
FIG. 4A is a view of an intermediate stage of fabricating a metal mask according to some embodiments of the present disclosure. -
FIG. 4B is a view ofFIG. 4A from another observation angle. -
FIG. 5 is a view of an intermediate stage of fabricating a metal mask according to some embodiments of the present disclosure. -
FIG. 6 is a cross-sectional view of a metal mask taken along line A-A shown inFIG. 5 according to some embodiments of the present disclosure. -
FIG. 7 toFIG. 9 are views of various intermediate stages of applying a metal mask shown inFIG. 5 according to some embodiments of the present disclosure. -
FIG. 10A is a view of an intermediate stage of fabricating a metal mask according to some other embodiments of the present disclosure. -
FIG. 10B is a view ofFIG. 10A from another observation angle. -
FIG. 11A is a view of an intermediate stage of fabricating a metal mask according to some other embodiments of the present disclosure. -
FIG. 11B is a view ofFIG. 11A from another observation angle. -
FIG. 12A is a view of an intermediate stage of fabricating a metal mask according to some other embodiments of the present disclosure. -
FIG. 12B is a view ofFIG. 12A from another observation angle. -
FIG. 13 is a view of an intermediate stage of fabricating a metal mask according to some other embodiments of the present disclosure. -
FIG. 14 is a cross-sectional of a metal mask taken along line B-B shown inFIG. 12 according to some other embodiments of the present disclosure. -
FIG. 15 toFIG. 18 are views of various intermediate stages of applying a metal mask shown inFIG. 13 according to some other embodiments of the present disclosure. - Reference will now be made in detail to the present embodiments of the disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
- The following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. For illustration clarity, many details of practice are explained in the following descriptions. However, it should be understood that these details of practice do not intend to limit the present disclosure. That is, these details of practice are not necessary in parts of embodiments of the present disclosure. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact.
- Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- The use of ordinals such as first, second and third does not necessarily imply a ranked sense of order, but rather may only distinguish between multiple instances of an act or structure. It will be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.
- In some embodiments, the terms “about” and “substantially” can refer to a percentage of the values as interpreted by those skilled in relevant art(s) in light of the teachings herein. The terms “about” and “substantially” can indicate a value of a given quantity that varies within an acceptable deviation of the value. These values are merely examples and are not intended to be limiting.
- Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
- In the fabrication of a display device, particularly a narrow bezel display device, a wire formed at an edge of a substrate in the display device by using a conductive through hole, lithography techniques, or etching techniques can electrically connect various electrical components separately disposed on two opposite sides of a substrate. However, manufacturing the conductive through hole in the substrate may not be fully established in the fabrication of the display device, and a lithography process and/or an etching process may complicate the fabrication of the display device. As a result, the fabrication difficulty and cost may be increased.
- The present disclosure provides a metal mask and a method of fabricating thereof. A blind hole/a bending axis formed in the metal mask can facilitate an operation of bending the metal mask to turn the metal mask into a three-dimensional metal mask. The resulted three-dimensional metal mask can be used to form wires at the edge of a substrate for electrical connection between the electrical components which are separately disposed on two opposite sides of the substrate.
-
FIG. 1 ,FIG. 2A ,FIG. 3A ,FIG. 4A andFIG. 5 are views of various intermediate stages of fabricating a metal mask according to some embodiments of the present disclosure. Various operations of embodiments are provided herein. The order in which some or all of the operations are described should not be construed to imply that these operations are necessarily order dependent. Alternative ordering will be appreciated having the benefit of this description. Additional operations can be provided before, during, and/or after the operations disclosed herein, and may be briefly described herein. Further, it will be understood that not all operations are necessarily present in each embodiment provided herein. Also, it will be understood that not all operations are necessary in some embodiments.FIG. 2B ,FIG. 3B andFIG. 4B are views from an observation angle of invertedFIG. 2A ,FIG. 3A andFIG. 4A , respectively. -
FIG. 1 illustrates step S10 of receiving a metalplanar substrate 100. The metalplanar substrate 100 can include a first surface S1 (e.g., parallel to the xy plane) and a second surface S2 opposite to the first surface S1. The metalplanar substrate 100 includes metal. In some embodiments, the metalplanar substrate 100 may include Cu, Ni, Fe, Co, Sn, Cr, Ti, Al, other suitable metal, an alloy of the above-mentioned metal, or a combination thereof. For example, the metalplanar substrate 100 can include Ni. In some other embodiments, the metalplanar substrate 100 can include stainless steel. - The metal
planar substrate 100 can include a thickness T1, which is related to a thickness of a metal mask formed later. In some embodiments, the thickness T1 may be between about 20 micrometers (μm) and about 150 μm. If the thickness T1 is greater than the above-noted upper limits, the difficulty and cost may be increased in the subsequent processes (e.g., in an etching process). If the thickness T1 is less than the above-noted lower limits, handling the metal mask may become challenging. For example, the metal layer with undesirably thin thickness may require precise operation and gentle treatment to ensure an intact profile of the metal layer. In some embodiments, the thickness T1 of the metalplanar substrate 100 can be a uniform thickness. - Subsequently, the metal
planar substrate 100 can be patterned to form the metalplanar substrate 100 into a predetermined structure. The operations of pattering the metalplanar substrate 100 are described inFIG. 2A toFIG. 4B . -
FIG. 2A andFIG. 2B illustrate step S12 of performing a lithography process to form a first pattern P1 on the first surface S1, a second pattern P2 on the first surface S1 and a third pattern P3 on the second surface S2. In detail, aphotoresist 200 is firstly formed on the first surface S1 and the second surface S2 of the metalplanar substrate 100. In some embodiments, thephotoresist 200 can be formed by spin coating, dry film lamination or other suitable techniques. Subsequently, an exposure process through a mask (not illustrated herein) and a development process can be performed on thephotoresist 200 to form the patternedphotoresist 200 with the first pattern P1, the second pattern P2 and the third pattern P3. As shown inFIG. 2A andFIG. 2B , a portion of the metalplanar substrate 100 can be exposed in the first pattern P1, the second pattern P2 and the third pattern P3. - The first pattern P1 and the second pattern P2 are on the first surface S1, and the third pattern P3 is on the second surface S2. The first pattern P1 can be elongated and extend in a first direction (e.g., extend along the x axis). The second pattern P2 can be elongated and extend in a second direction which may be perpendicular to the first direction (e.g., extend along the y axis). The third pattern P3 can be designed to correspond to the first pattern P1. For example, an arrangement of the third pattern P3 can be substantially the same as an arrangement of the first pattern P1. In other words, a projection of the first pattern P1 on the second surface S2 can overlap the third pattern P3 on the second surface S2. Thus, the third pattern P3 can also be elongated and extend in the first direction (e.g., extend along the x axis). The dashed lines illustrated in
FIG. 2B indicate a projection of the second pattern P2 on the second surface S2. - In some embodiments as illustrated in
FIG. 2A andFIG. 2B , the first pattern P1 and the third pattern P3 can individually include 4 elongated openings. The arrangement of the first pattern P1 and the arrangement of the third pattern P3 can be adjusted based on various process requirements or product designs, and therefore the present disclosure is not limited to the shape (e.g., elongated) or the number (e.g., 4) of openings. Similarly, the second pattern P2 can include 2 elongated openings as shown inFIG. 2A , but the present disclosure is not limited to the shape (e.g., elongated) or the number (e.g., 2) of openings. -
FIG. 3A andFIG. 3B illustrate step S14 of performing an etching process to remove the portion of the metal planar substrate exposed in the first pattern P1, the second pattern P2 and the third pattern P3. Multiple throughholes 300 may be formed by etching the metalplanar substrate 100 through the first pattern P1 and the third pattern P3. A firstblind hole 302 and a secondblind hole 304 may be formed in the metalplanar substrate 100 by etching the metalplanar substrate 100 through the second pattern P2. - During the etching process, etchants can concurrently etch the metal
planar substrate 100 from the first surface S1 through the first pattern P1 and from the second surface S2 through the third pattern P3, thereby forming the throughholes 300 extending to the first surface S1 and the second surface S2. The etchants can etch the metalplanar substrate 100 from the first surface S1 through the second pattern P2 to recess the first surface S1 of the metalplanar substrate 100, thereby forming the firstblind hole 302 and the secondblind hole 304 in the first surface S1. - In a further description, during the etching process to remove the portion of the metal
planar substrate 100, the thickness T1 of the metalplanar substrate 100 may be reduced by at least about 25%. For example, about 25% of thickness T1, about 50% of thickness T1, or other suitable amount of thickness T1 may be removed off. In some embodiments, a removal amount for forming the firstblind hole 302 or the secondblind hole 304 can be about 25% of the thickness T1. In other words, a depth D1 of the firstblind hole 302 and the secondblind hole 304 may be about 25% of the thickness T1. - A pattern of the through
holes 300 can correspond to the first pattern P1 and the third pattern P3. Therefore, the throughholes 300 can be elongated and extend in the first direction (e.g., extend along the x axis). A pattern of the firstblind hole 302 and the secondblind hole 304 can correspond to the second pattern P2. Therefore, the firstblind hole 302 and the secondblind hole 304 can be elongated and extend in the second direction which is substantially perpendicular to the first direction (e.g., extend along the y axis). In some embodiments, the firstblind hole 302 and the secondblind hole 304 may be designed to be parallel to each other. In some embodiments, an individual width of the firstblind hole 302 or the second blind hole 304 (e.g., a dimension along the x axis) may be less than an individual width of the through holes 300 (e.g., a dimension along the y axis). - It is noted that the present disclosure is not limited to the above description about performing the lithography process and the etching process on the double sides (e.g., the first surface S1 and the second surface S2) of the metal
planar substrate 100. In some other embodiments, in step S12, the lithography process can be performed on the single side (e.g., the first surface S1) of the metalplanar substrate 100 to form the patternedphotoresist 200 with the first pattern P1 and the second pattern P2 on the first surface S1 of the metalplanar substrate 100. Further, instep 14, in the case of the patternedphotoresist 200 disposed on the single side (e.g., the first surface S1) of the metalplanar substrate 100, the etching process can be performed on the metalplanar substrate 100 from the first surface S1 through the first pattern P1 to form the throughholes 300 as well as through the second pattern P2 to form the firstblind hole 302 and the secondblind hole 304. -
FIG. 4A andFIG. 4B illustrate step S16 of removing thephotoresist 200. After removing thephotoresist 200, the patterned metalplanar substrate 100 can become ametal mask 400. As shown inFIG. 4A andFIG. 4B , themetal mask 400 can have multiple strip-shapedstructures 402, aboard portion 404 including a first board portion 404-1 and a second board portion 404-2, the firstblind hole 302, and the secondblind hole 304. The strip-shapedstructures 402 can extend in the first direction (e.g., extend along the x axis) and connect the first board portion 404-1 and the second board portion 404-2. The firstblind hole 302 and the secondblind hole 304 can be disposed in the first surface S1 and can be a recess in a direction from the first surface S1 to the second surface S2. In some embodiments, the firstblind hole 302 and the secondblind hole 304 can be elongated extending in the second direction which may be substantially perpendicular to the first direction (e.g., extend along the y axis) and across the strip-shapedstructures 402. - In previous step S14, the strip-shaped
structures 402 can be formed as soon as the through holes 300 (seeFIG. 3A ) are formed. The throughholes 300 and the strip-shapedstructures 402 can be alternately arranged. In other words, two adjacent strip-shapedstructures 402 can be spaced apart by the throughholes 300. As a result, the throughholes 300 defined by the first pattern P1 and the third pattern P3 can determine an arrangement of the strip-shapedstructures 402. - Specifically, the strip-shaped
structures 402 may include a first section 402-1, a second section 402-2 and a third section 402-3. In some embodiments, the first section 402-1 may be between and connect the second section 402-2 and the third section 402-3. In addition, the second section 402-2 may connect the first board portion 404-1 and the first section 402-1, and the third section 402-3 may connect the second board portion 404-2 and the first section 402-1. In some embodiments, the firstblind hole 302 may be between the first section 402-1 and the second section 402-2, and the secondblind hole 304 may be between the first section 402-1 and the third section 402-3. In some embodiments where the thickness T1 (seeFIG. 1 ) of the metalplanar substrate 100 is uniform, a thickness T2 of the strip-shapedstructures 402 may be uniform. In some embodiments, the thickness T2 of the strip-shapedstructures 402 may substantially be the same as the thickness T1 (seeFIG. 1 ) of the metalplanar substrate 100. In some embodiments, the thickness T2 of the strip-shapedstructures 402 can be between about 20 μm and about 150 μm. - The first
blind hole 302 may be positioned between the first section 402-1 and the second section 402-2, and the secondblind hole 304 may be positioned between the first section 402-1 and the third section 402-3. In some embodiments, the depth D1 from the first surface S1 to form the firstblind hole 302 and the secondblind hole 304 may be at least about 25% of the thickness T2 of the strip-shapedstructures 402. That is, the thickness T2 of the strip-shapedstructures 402 can be about 1 time to about 4 times the depth D1 from the first surface S1 to form the firstblind hole 302 and the secondblind hole 304. For example, the depth D1 of the firstblind hole 302 and the secondblind hole 304 can be about 50% of the thickness T2 of the strip-shapedstructures 402, meaning the thickness T2 of the strip-shapedstructures 402 can be about twice the depth D1 of the firstblind hole 302 and the secondblind hole 304. - In some embodiments, the first
blind hole 302 and the secondblind hole 304 can respectively be used as afirst bending axis 302 and asecond bending axis 304 to bend themetal mask 400. A greater detail will be described later with reference ofFIG. 5 . In the embodiments where the firstblind hole 302 and the secondblind hole 304 can respectively be used as thefirst bending axis 302 and thesecond bending axis 304, before themetal mask 400 is bent, the first section 402-1 may be positioned between thefirst bending axis 302 and thesecond bending axis 304, the first board portion 404-1 and the second section 402-2 may be positioned next to a side of thefirst bending axis 302, and the second board portion 404-2 and the third section 402-3 may be positioned next to a side of thesecond bending axis 304. -
FIG. 5 illustratesstep 18 of using the firstblind hole 302 and the secondblind hole 304 as thefirst bending axis 302 and thesecond bending axis 304 to bend themetal mask 400 such that themetal mask 400 can become three-dimensional. InFIG. 5 , themetal mask 400 illustrated inFIG. 4A can be bent along a bending direction R to form the three-dimensional metal mask 400. Consequently, the second surface S2 may become an outer surface and the first surface S1 may become an inner surface. - Continuing in
FIG. 5 and referring toFIG. 6 at the same time,FIG. 6 illustrates a cross-sectional view of themetal mask 400 in a three-dimensional profile taken along line A-A shown inFIG. 5 according to some embodiments of the present disclosure. In some embodiments as illustrated inFIG. 6 , after themetal mask 400 is bent, the second section 402-2 and the third section 402-3 may face each other, and the first board portion 404-1 and the second board portion 404-2 may face each other. Further, a first angle θ1 is formed by the first section 402-1 and the second section 402-2, and a second angle θ2 is formed by the first section 402-1 and the third section 402-3. In some embodiments, the first board portion 404-1 and the second board portion 404-2 can be parallel to each other. In some embodiments as illustrated inFIG. 6 , the first section 402-1, the second section 402-2 and the third section 402-3 may collectively form a C-shaped structure in a cross-sectional view of the three-dimensional metal mask 400. - Referring to
FIG. 7 toFIG. 9 ,FIG. 7 toFIG. 9 are views of various intermediate stages of applying themetal mask 400 in the three-dimensional profile illustrated inFIG. 5 according to some embodiments of the present disclosure. For example, themetal mask 400 in the three-dimensional profile is used to form wires at the edge of a slab-shaped substrate. Various operations of embodiments are provided herein. The order in which some or all of the operations are described should not be construed to imply that these operations are necessarily order dependent. Alternative ordering will be appreciated having the benefit of this description. Additional operations can be provided before, during, and/or after these operations inFIG. 7 toFIG. 9 , and may be briefly described herein. Further, it will be understood that not all operations are necessarily present in each embodiment provided herein. Also, it will be understood that not all operations are necessary in some embodiments. -
FIG. 7 illustrates step A10 of receiving a slab-shapedsubstrate 700 and disposing themetal mask 400 in the three-dimensional profile at the edge of the slab-shapedsubstrate 700. In detail, theboard portion 404 of themetal mask 400 can directly contact a third surface S3 and a fourth surface S4 of the slab-shapedsubstrate 700. The third surface S3 and the fourth surface S4 are opposite to each other and may be parallel to the xy plane. The strip-shapedstructures 402 of themetal mask 400 can directly contact the third surface S3, the fourth surface S4 and a fifth surface S5. The fifth surface S5 connects the third surface S3 and the fourth surface S4, and may be parallel to the yz plane. - The three-dimensional profile of the
metal mask 400 is designed to be consistent with a profile of the slab-shapedsubstrate 700, thereby allowing the three-dimensional metal mask 400 to fit an edge area of the slab-shapedsubstrate 700. In some embodiments, a width W1 of the slab-shapedsubstrate 700 can substantially be the same as a length of the first section 402-1 of the strip-shapedstructures 402. -
FIG. 8 illustrates step A12 of forming a metal material 800 on an exposed portion of the slab-shapedsubstrate 700 without themetal mask 400 covered. Specifically, the metal material 800 can be formed between each of the strip-shapedstructures 402. A thickness of the metal material 800 may be less than a thickness of the metal mask 400 (e.g. the thickness T2 shown inFIG. 4A ). In some embodiments, a mask (not illustrated here) may be used to cover some other portions of the slab-shapedsubstrate 700 to avoid the metal material 800 from appearing thereon. In some embodiments, the metal material 800 can be formed by a sputtering process, an evaporation process, or any suitable process. It is noted that, in an actual operation, the metal material 800 may be formed not only on the exposed portion of the slab-shapedsubstrate 700 but also on themetal mask 400. For clarity,FIG. 8 is simplified by omitting to illustrate a portion of the metal material 800 on themetal mask 400. - Due to a low coefficient of heat expansion, the
metal mask 400 may not be changed with temperature in terms of structure such as expansion or contraction of volume during a process of forming the metal material 800 by the sputtering process, the evaporation process or the like. Therefore, themetal mask 400 can remain original arrangement, thereby ensuring process stability of forming the metal material 800 and further increasing reliability of metal wires formed later (e.g.,metal wires 900 in belowFIG. 9 ). -
FIG. 9 illustrates step A14 of removing themetal mask 400 such that the remainingmetal material 900 can become themetal wires 900 at the edge of the slab-shapedsubstrate 700. Themetal wires 900 can extend on the third surface S3, the fourth surface S4 and the fifth surface S5 continuously. Themetal wires 900 can electrically connect various electrical components (not illustrated here) separately disposed on the third surface S3 and fourth surface S4. With themetal mask 400, themetal wires 900 can be formed at the edge of the slab-shapedsubstrate 700 in a convenient way. -
FIG. 10A ,FIG. 11A ,FIG. 12A andFIG. 13 are views of various intermediate stages of fabricating a metal mask with another structure according to some other embodiments of the present disclosure.FIG. 10B ,FIG. 11B andFIG. 12B are views from an observation angle of invertedFIG. 10A ,FIG. 11A andFIG. 12A , respectively. Operations for fabricating the metal mask with another structure can be similar to the operations for fabricating themetal mask 400 as above-mentioned description. For example, step S22 discussed later inFIG. 10A can be similar to step S12 discussed inFIG. 2A , step S24 discussed later inFIG. 11A can be similar to step S14 discussed inFIG. 3A , step S26 discussed later inFIG. 12A can be similar to step S16 discussed inFIG. 4A , and step S28 discussed later inFIG. 13 can be similar to step S18 discussed inFIG. 5 . Further, step S10 discussed inFIG. 1 can be directly implemented in the operations for fabricating the metal mask with another structure. Therefore, no further discussions are elaborated for step S10. - Additional operations can be provided before, during, and/or after these operations in
FIG. 10A ,FIG. 11A ,FIG. 12A andFIG. 13 , and may be briefly described herein. Further, it will be understood that not all operations are necessarily present in each embodiment provided herein. Also, it will be understood that not all operations are necessary in some embodiments. -
FIG. 10A andFIG. 10B illustrate step S22 of performing a lithography process to form a fourth pattern P4 on the first surface S1, a fifth pattern P5 on the first surface S1 and a sixth pattern P6 on the second surface S2. In detail, aphotoresist 1000 is firstly formed on the first surface S1 and the second surface S2 of the metalplanar substrate 100. Methods for forming thephotoresist 1000, the fourth pattern P4, the fifth pattern P5 and the sixth pattern P6 can be similar to previous discussion inFIG. 2A andFIG. 2B , and therefore no further description is elaborated here. As shown inFIG. 10A andFIG. 10B , a portion of the metalplanar substrate 100 can be exposed in the fourth pattern P4, the fifth pattern P5 and the sixth pattern P6. - The fourth pattern P4 and the fifth pattern P5 are on the first surface S1, and the sixth pattern P6 is on the second surface S2. The fourth pattern P4 may be similar to the first pattern P1 illustrated in
FIG. 2A . Thus, the fourth pattern P4 can be elongated and extend in the first direction (e.g., extend along the x axis) until an edge of the metalplanar substrate 100. The fifth pattern P5 may be similar to the second pattern P2 illustrated inFIG. 2A . Thus, the fifth pattern P5 can be elongated and extend in the second direction which may be perpendicular to the first direction (e.g., extend along the y axis). The sixth pattern P6 may be similar to the third pattern P3 illustrated inFIG. 2B . The sixth pattern P6 can be designed to correspond to the fourth pattern P4. For example, an arrangement of the sixth pattern P6 can be substantially the same as an arrangement of the fourth pattern P4. In other words, a projection of the fourth pattern P4 on the second surface S2 can overlap the sixth pattern P6 on the second surface S2. Thus, the sixth pattern P6 can also be elongated and extend in the first direction (e.g., extend along the x axis) until the edge of the metalplanar substrate 100. The dashed lines illustrated inFIG. 10B indicate a projection of the fifth pattern P5 on the second surface S2. It is noted that the fifth pattern P5 may include less elongated openings than the second pattern P2 illustrated in 2A. -
FIG. 11A andFIG. 11B illustrate step S24 of performing an etching process to remove the portion of the metal planar substrate exposed in the fourth pattern P4, the fifth pattern P5 and the sixth pattern P6. Multiple throughholes 1100 may be formed by etching the metalplanar substrate 100 through the fourth pattern P4 and the sixth pattern P6. Ablind hole 1102 may be formed in the metalplanar substrate 100 by etching the metalplanar substrate 100 through the fifth pattern P5. - As discussed in step S14, during the etching process, etchants can concurrently etch the metal
planar substrate 100 from the first surface S1 through the fourth pattern P4 and from the second surface S2 through the sixth pattern P6, thereby forming the throughholes 1100 extending to the first surface S1 and the second surface S2. The etchants can etch the metalplanar substrate 100 from the first surface S1 through the fifth pattern P5 to recess the first surface S1 of the metalplanar substrate 100, thereby forming theblind hole 1102 in the first surface S1. - In a further description, during the etching process to remove the portion of the metal
planar substrate 100, the thickness T1 of the metalplanar substrate 100 may be reduced by at least about 25%. For example, about 25% of thickness T1, about 50% of thickness T1, or other suitable amount of thickness T1 may be removed off. In some embodiments, a removal amount for forming theblind hole 1102 can be about 25% of the thickness T1. In other words, a depth D2 of theblind hole 1102 may be about 25% of the thickness T1. - A pattern of the through
holes 1100 can correspond to the fourth pattern P4 and the sixth pattern P6. Therefore, the throughholes 1100 can be elongated and extend in the first direction (e.g., extend along the x axis) until the edge of the metalplanar substrate 100. A pattern of theblind hole 1102 can correspond to the fifth pattern P5. Therefore, theblind hole 1102 can be elongated and extend in the second direction which is substantially perpendicular to the first direction (e.g., extend along the y axis). In some embodiments, a width of the blind hole 1102 (e.g., a dimension along the x axis) may be less than an individual width of the through holes 1100 (e.g., a dimension along the y axis). -
FIG. 12A andFIG. 12B illustrate step S26 of removing thephotoresist 1000. After removing thephotoresist 1000, the patterned metalplanar substrate 100 can become ametal mask 1200. As shown inFIG. 12A andFIG. 12B , themetal mask 1200 can have multiple strip-shapedstructures 1202, aboard portion 1204, and theblind hole 1102. The strip-shapedstructures 1202 can be connected to theboard portion 1204 and extend in the first direction (e.g., extend along the x axis). One end of the strip-shapedstructures 1202 may be at an edge of themetal mask 1200. Theblind hole 1102 can be disposed in the first surface S1 and can be a recess in a direction from the first surface S1 to the second surface S2. In some embodiments, theblind hole 1102 can be elongated extending in the second direction which may be substantially perpendicular to the first direction (e.g., extend along the y axis) and across the strip-shapedstructures 1202. - In previous step S24, the strip-shaped
structures 1202 can be formed once the through holes 1100 (seeFIG. 11A ) are formed. The throughholes 1100 and the strip-shapedstructures 1202 can be alternately arranged. In other words, two adjacent strip-shapedstructures 1202 can be spaced apart by the through holes 1100. As a result, the throughholes 1100 defined by the fourth pattern P4 and the sixth pattern P6 can determine an arrangement of the strip-shapedstructures 1202. - Specifically, the strip-shaped
structures 1202 may include a first section 1202-1, a second section 1202-2 and a third section 1202-3. In some embodiments, the second section 1202-2 may connect theboard portion 1204 and the first section 1202-1. In some embodiments, the blind hole 1402 may be between the first section 1202-1 and the second section 1202-2. In some embodiments where the thickness T1 (seeFIG. 1 ) of the metalplanar substrate 100 is uniform, a thickness T3 of the strip-shapedstructures 1202 may be uniform. In some embodiments, the thickness T3 of the strip-shapedstructures 1202 may substantially be the same as the thickness T1 (seeFIG. 1 ) of the metalplanar substrate 100. In some embodiments, the thickness T3 of the strip-shapedstructures 1202 can be between about 20 μm and about 150 μm. - The
blind hole 1102 may be positioned between the first section 1202-1 and the second section 1202-2. In some embodiments, the depth D2 from the first surface S1 to form theblind hole 1102 may be at least about 25% of the thickness T3 of the strip-shapedstructures 1202. That is, the thickness T3 of the strip-shapedstructures 1202 can be about 1 time to about 4 times the depth D2 from the first surface S1 to form theblind hole 1102. For example, the depth D2 of theblind hole 1102 can be about 50% of the thickness T3 of the strip-shapedstructures 1202, meaning the thickness T3 of the strip-shapedstructures 1202 can be about twice the depth D2 of theblind hole 1102. - In some embodiments, the
blind hole 1102 can be used as a bendingaxis 1102 to bend themetal mask 1200. A greater detail will be described later with reference ofFIG. 13 . In the embodiments where theblind hole 1102 can be used as the bendingaxis 1102, before themetal mask 1200 is bent, theboard portion 1204 and the second section 1202-2 may be positioned next to a first side of the bendingaxis 1102, and the first section 1202-1 may be positioned next to a second side of the bendingaxis 1102, where the first side and the second side are opposite to each other. -
FIG. 5 illustratesstep 28 of using theblind hole 1102 as the bendingaxis 1102 to bend themetal mask 1200 such that themetal mask 1200 can become three-dimensional. InFIG. 13 , themetal mask 1200 illustrated inFIG. 12A can be bent along a bending direction R to form the three-dimensional metal mask 1200. - Continuing in
FIG. 13 and referring toFIG. 14 at the same time,FIG. 14 illustrates a cross-sectional view of themetal mask 1200 in a three-dimensional profile taken along line B-B shown inFIG. 13 according to some embodiments of the present disclosure. In some embodiments as illustrated inFIG. 14 , after themetal mask 1200 is bent, a third angle θ3 is formed by the first section 1202-1 and the second section 1202-2. In some embodiments, the first section 1202-1 and the second section 1202-2 may collectively form an L-shaped structure in a cross-sectional view of the three-dimensional metal mask 1200. - Referring to
FIG. 15 toFIG. 18 ,FIG. 15 toFIG. 18 are views of various intermediate stages of applying themetal mask 1200 in the three-dimensional profile illustrated inFIG. 13 according to some embodiments of the present disclosure. For example, themetal mask 1200 in the three-dimensional profile is used to form wires at the edge of a slab-shaped substrate. Various operations of embodiments are provided herein. The order in which some or all of the operations are described should not be construed to imply that these operations are necessarily order dependent. Alternative ordering will be appreciated having the benefit of this description. Additional operations can be provided before, during, and/or after these operations inFIG. 15 toFIG. 18 , and may be briefly described herein. Further, it will be understood that not all operations are necessarily present in each embodiment provided herein. Also, it will be understood that not all operations are necessary in some embodiments. -
FIG. 15 illustrates step A20 of receiving the slab-shapedsubstrate 700 and disposing themetal mask 1200 in the three-dimensional profile at the edge of the slab-shapedsubstrate 700. In detail, theboard portion 1204 of themetal mask 1200 can directly contact the third surface S3 of the slab-shapedsubstrate 700. The third surface S3 may be parallel to the xy plane. The strip-shapedstructures 1202 of themetal mask 1200 can directly contact the third surface S3 and the fifth surface S5. The fifth surface S5 may be parallel to the yz plane. - The three-dimensional profile of the
metal mask 1200 is designed to be consistent with a profile of the slab-shapedsubstrate 700, thereby allowing the three-dimensional metal mask 1200 to fit the edge area of the slab-shapedsubstrate 700. In some embodiments, the width W1 of the slab-shapedsubstrate 700 can substantially be the same as a length of the first section 1202-1 of the strip-shapedstructures 1202. -
FIG. 16 illustrates step A22 of forming afirst metal material 1600 on an exposed portion of the slab-shapedsubstrate 700 without themetal mask 1200 covered. Thefirst metal material 1600 may be formed on the third surface S3 and the fifth surface S5 of the slab-shapedsubstrate 700. Specifically, thefirst metal material 1600 can be formed between each of the strip-shapedstructures 1202. A thickness of thefirst metal material 1600 may be less than a thickness of the metal mask 1200 (e.g. the thickness T3 shown inFIG. 12A ). In some embodiments, a mask (not illustrated here) may be used to cover some other portions of the slab-shapedsubstrate 700 to avoid thefirst metal material 1600 from appearing thereon. In some embodiments, thefirst metal material 1600 can be formed by a sputtering process, an evaporation process, or any suitable process. It is noted that, in an actual operation, thefirst metal material 1600 may be formed not only on the exposed portion of the slab-shapedsubstrate 700 but also on themetal mask 1200. For clarity,FIG. 16 is simplified by omitting to illustrate a portion of thefirst metal material 1600 on themetal mask 1200. -
FIG. 17 illustrates step A23 of inverting themetal mask 1200 inFIG. 16 and then disposing themetal mask 1200 at the same edge of the slab-shapedsubstrate 700. In an embodiment as illustrated inFIG. 17 , theboard portion 1204 of themetal mask 1200 can directly contact the fourth surface S4 of the slab-shapedsubstrate 700. The strip-shapedstructures 1202 of themetal mask 1200 can directly contact the fourth surface S4 as well as the fifth surface S5. - It is noted that, in step A23, a location on the fifth surface S5 where the
metal mask 1200 is disposed can be corresponding aligned with a location on the fifth surface S5 where thefirst metal material 1600 is formed. In other words, that thefirst metal material 1600 and the strip-shapedstructures 1202 are alternately disposed on the fifth surface S5 can be observed after themetal mask 1200 is disposed at the same edge of the slab-shapedsubstrate 700. - Subsequently, a
second metal material 1700 can be formed on an exposed portion of the slab-shapedsubstrate 700 without themetal mask 1200 covered. In an embodiment as illustrated inFIG. 17 , thesecond metal material 1700 can be formed on the fourth surface S4 and the fifth surface S5. Specifically, thesecond metal material 1700 can be formed between each of the strip-shapedstructures 1202. A thickness of thesecond metal material 1700 may be less than a thickness of the metal mask 1200 (e.g. the thickness T3 shown inFIG. 12A ). In some embodiments, a mask (not illustrated here) may be used to cover some other portions of the slab-shapedsubstrate 700 to avoid thesecond metal material 1700 from appearing thereon. - In some embodiments, the
second metal material 1700 can be formed by a sputtering process, an evaporation process, or any suitable process. It is noted that, in an actual operation, thesecond metal material 1700 may be formed not only on the exposed portion of the slab-shapedsubstrate 700 but also on themetal mask 1200. For clarity,FIG. 17 is simplified by omitting to illustrate a portion of thesecond metal material 1700 on themetal mask 1200. - Further, since a metal material (e.g., the
first metal material 1600 and the second metal material 1700) is repeatedly formed on the fifth surface S5 in step A22 and A23, the above-mentioned metal material can be a double-layer stack including thefirst metal material 1600 and thesecond metal material 1700. In some embodiments, a thickness of the above-mentioned double-layer stack may be less than a thickness of the metal mask 1200 (e.g. the thickness T3 shown inFIG. 12A ). -
FIG. 18 illustrates step A24 of removing themetal mask 1200 such that thefirst metal material 1600 and thesecond metal material 1700 are remained and can collectively becomemetal wires 1800 at the edge of the slab-shapedsubstrate 700. Themetal wires 1800 can extend on the third surface S3, the fourth surface S4 and the fifth surface S5 continuously. Themetal wires 1800 can electrically connect various electrical components (not illustrated here) separately disposed on the third surface S3 and fourth surface S4. A thickness of themetal wires 1800 on the fifth surface S5 may be greater than a thickness of themetal wires 1800 either on the third surface S3 or the fourth surface S4. In some embodiments, the thickness of themetal wires 1800 on the fifth surface S5 may be about twice the thickness of themetal wires 1800 on the third surface S3 or the fourth surface S4. - The present disclosure discloses various embodiments to provide a metal mask and a method of fabricating thereof. Thus, a metal mask can be formed through a more convenient process.
- A bending axis formed in the metal mask can facilitate an operation of bending the metal mask to turn the metal mask into a three-dimensional metal mask. Thus, the resulted three-dimensional metal mask can fit an edge area of a slab-shape substrate. Then, by a sputter process or an evaporation process through the metal mask, metal wires can be formed on three surfaces near the edge area of the slab-shape substrate to electrically connect various electrical components separately disposed on two opposite sides of the slab-shaped substrate. Therefore, using the metal mask during forming the metal wires near the edge area of the slab-shaped substrate can simplify fabrication process and reduce process cost. In addition, the metal mask disclosed in the present disclosure can be made of metal. Due to a lower coefficient of heat expansion of the metal than other materials (e.g., polymer), the metal mask may be capable of a wide range of operation temperature and better process reliability when the metal mask is used in a process related to heating or change of temperature.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the present disclosure cover modifications and variations of this disclosure provided they fall within the scope of the following claims.
Claims (18)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18/913,066 US20250033102A1 (en) | 2021-08-26 | 2024-10-11 | Method of fabricating metal mask |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110131683A TWI785762B (en) | 2021-08-26 | 2021-08-26 | Method of fabricating metal mask and metal mask |
| TW110131683 | 2021-08-26 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US18/913,066 Division US20250033102A1 (en) | 2021-08-26 | 2024-10-11 | Method of fabricating metal mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20230067548A1 true US20230067548A1 (en) | 2023-03-02 |
Family
ID=80380846
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US17/547,446 Abandoned US20230067548A1 (en) | 2021-08-26 | 2021-12-10 | Method of fabricating metal mask and metal mask |
| US18/913,066 Pending US20250033102A1 (en) | 2021-08-26 | 2024-10-11 | Method of fabricating metal mask |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US18/913,066 Pending US20250033102A1 (en) | 2021-08-26 | 2024-10-11 | Method of fabricating metal mask |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US20230067548A1 (en) |
| CN (1) | CN114107893B (en) |
| TW (1) | TWI785762B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091212A (en) * | 1988-12-19 | 1992-02-25 | Murata Manufacturing Co., Ltd. | Method and apparatus for forming electrode on electronic component |
| US20150376765A1 (en) * | 2014-06-30 | 2015-12-31 | Shanghai Tianma AM-OLED Co., Ltd. | Mask, method for manufacturing the same and process device |
| US20200043696A1 (en) * | 2018-08-03 | 2020-02-06 | Tetos Co., Ltd. | Substrate side-deposition apparatus |
| US20220013753A1 (en) * | 2019-09-17 | 2022-01-13 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Mask, method for fabricating mask and drive-backplane motherboard |
| US20220157629A1 (en) * | 2019-03-19 | 2022-05-19 | Applied Materials Italia S.R.L. | Deposition apparatus, method of deposition on a substrate, substrate structure and substrate support |
| US20230064427A1 (en) * | 2021-08-26 | 2023-03-02 | Darwin Precisions Corporation | Method of fabricating metal mask and metal mask |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07321447A (en) * | 1994-05-20 | 1995-12-08 | Toyota Autom Loom Works Ltd | Substrate for mounting electronic parts and its manufacturing method and metal plate material for manufacturing substrate for mounting electronic parts and joint-prevention mask |
| JP4006173B2 (en) * | 2000-08-25 | 2007-11-14 | 三星エスディアイ株式会社 | Metal mask structure and manufacturing method thereof |
| US6522014B1 (en) * | 2000-09-27 | 2003-02-18 | International Business Machines Corporation | Fabrication of a metalized blind via |
| JP4692290B2 (en) * | 2006-01-11 | 2011-06-01 | セイコーエプソン株式会社 | Mask and film forming method |
| KR20100026655A (en) * | 2008-09-01 | 2010-03-10 | 삼성모바일디스플레이주식회사 | Mask for thin film deposition and manufacturing method of oled using the same |
| KR20120045865A (en) * | 2010-11-01 | 2012-05-09 | 삼성모바일디스플레이주식회사 | Apparatus for organic layer deposition |
| TW201432532A (en) * | 2013-02-05 | 2014-08-16 | Unidisplay Inc | Touch panel and manufacturing method thereof and touch display panel |
| CN104561896A (en) * | 2014-12-31 | 2015-04-29 | 昆山国显光电有限公司 | Mask for evaporation and preparation method of mask |
| KR102557891B1 (en) * | 2015-10-16 | 2023-07-21 | 삼성디스플레이 주식회사 | Method for manufacturing mask |
| CN118159109A (en) * | 2016-09-13 | 2024-06-07 | Lg伊诺特有限公司 | Metal plate for deposition mask, deposition mask and method for manufacturing the same |
| CN110578119A (en) * | 2018-06-08 | 2019-12-17 | 大日本印刷株式会社 | Metal plate, wound body, method for wrapping the same, method for storing the same, wrapping body, and method for producing a vapor deposition mask |
| CN109100914A (en) * | 2018-06-29 | 2018-12-28 | 武汉华星光电半导体显示技术有限公司 | Mask plate and flexible display panels |
| JP7169534B2 (en) * | 2018-07-31 | 2022-11-11 | 大日本印刷株式会社 | Evaporation mask manufacturing method, evaporation mask, and power supply plate for producing evaporation mask |
| TWI718575B (en) * | 2019-06-27 | 2021-02-11 | 旭暉應用材料股份有限公司 | Metal mask |
| CN113302330A (en) * | 2019-09-12 | 2021-08-24 | 京东方科技集团股份有限公司 | Mask device, manufacturing method thereof, evaporation method and display device |
-
2021
- 2021-08-26 TW TW110131683A patent/TWI785762B/en active
- 2021-11-05 CN CN202111305835.4A patent/CN114107893B/en active Active
- 2021-12-10 US US17/547,446 patent/US20230067548A1/en not_active Abandoned
-
2024
- 2024-10-11 US US18/913,066 patent/US20250033102A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091212A (en) * | 1988-12-19 | 1992-02-25 | Murata Manufacturing Co., Ltd. | Method and apparatus for forming electrode on electronic component |
| US20150376765A1 (en) * | 2014-06-30 | 2015-12-31 | Shanghai Tianma AM-OLED Co., Ltd. | Mask, method for manufacturing the same and process device |
| US20200043696A1 (en) * | 2018-08-03 | 2020-02-06 | Tetos Co., Ltd. | Substrate side-deposition apparatus |
| US20220157629A1 (en) * | 2019-03-19 | 2022-05-19 | Applied Materials Italia S.R.L. | Deposition apparatus, method of deposition on a substrate, substrate structure and substrate support |
| US20220013753A1 (en) * | 2019-09-17 | 2022-01-13 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Mask, method for fabricating mask and drive-backplane motherboard |
| US20230064427A1 (en) * | 2021-08-26 | 2023-03-02 | Darwin Precisions Corporation | Method of fabricating metal mask and metal mask |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114107893B (en) | 2023-10-24 |
| TWI785762B (en) | 2022-12-01 |
| US20250033102A1 (en) | 2025-01-30 |
| CN114107893A (en) | 2022-03-01 |
| TW202309315A (en) | 2023-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8692258B2 (en) | Array substrate of TFT-LCD including a black matrix and method for manufacturing the same | |
| US8426229B2 (en) | Method of fabricating liquid crystal display device | |
| JP5741992B2 (en) | TFT-LCD array substrate and manufacturing method thereof | |
| US6461886B1 (en) | Method of manufacturing a semiconductor device | |
| US12437997B2 (en) | Method of fabricating metal mask | |
| WO2018188160A1 (en) | Thin film transistor (tft) substrate and manufacturing method therefor | |
| US8148724B2 (en) | Liquid crystal display device and method of manufacturing the same | |
| TWI459477B (en) | Pixel structure and its making method | |
| US20230067548A1 (en) | Method of fabricating metal mask and metal mask | |
| US9530681B2 (en) | Method to provide the thinnest and variable substrate thickness for reliable plastic and flexible electronic device | |
| US8530144B2 (en) | Photomask and method for fabricating source/drain electrode of thin film transistor | |
| US20080182415A1 (en) | Semiconductor device and method for fabricating the same | |
| JPH02139972A (en) | Manufacturing method of semiconductor device | |
| CN110993621A (en) | Array substrate and manufacturing method thereof | |
| KR101157148B1 (en) | Method of Fabricating Semiconductor Device | |
| TW571426B (en) | Manufacturing method of non-optical etched thin film resistor | |
| JP2003330161A (en) | Manufacturing method of electronic part and electronic part using the manufacturing method | |
| JP2024141588A (en) | Junction structure between metal wiring and inorganic oxide wiring | |
| JP2005045173A (en) | Method for forming wire | |
| CN112186103A (en) | Resistor structure and manufacturing method thereof | |
| KR101234420B1 (en) | liquid crystal display device and fabricating method of the same | |
| JP2005236018A (en) | Minute wiring structure and manufacturing method thereof | |
| CN111201590A (en) | Thin film transistor, preparation method thereof, array substrate and display device | |
| JPH0574847A (en) | TAB semiconductor device connection structure | |
| JPH0476092B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: DARWIN PRECISIONS CORPORATION, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YANG, YUN-PEI;LIN, JEN-SHUN;CHANG, YU-WEI;SIGNING DATES FROM 20211203 TO 20211206;REEL/FRAME:058357/0106 |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |