JP2003330161A - Manufacturing method of electronic part and electronic part using the manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic part having a desired pattern shape which is formed on an insulation substrate without using a peculiar material and to provide a manufacturing method of the electronic part. <P>SOLUTION: In a photomask used for forming the desired pattern shape, the desired pattern shape is drawn by changing the line width of the desired pattern shape. The electronic part having the desired pattern shape can be provided by using the photomask. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component having a pattern formed by an additive plating method and a method for manufacturing the electronic component.

[0002]

2. Description of the Related Art As one of manufacturing methods for forming a pattern on an electronic component, a metal film is formed on an insulating substrate such as alumina, which is a base material of the electronic component, a photoresist is applied, and then a photomask is applied. There is a photolithography method in which exposure and development are performed.

[0003] An additive plating method in which plating is performed by using a photoresist pattern formed by the above photolithography method, and a method in which a pattern is formed by performing etching to manufacture an electronic component are generally used.

In an electronic component in which a pattern is formed by using the photolithography method, the formed pattern shape has a considerable influence on the characteristics of the electronic component. In a remarkable example, the pattern shape formed in the inductor element depends on the pattern shape. The characteristics are almost determined.

However, in recent years, electronic parts have become smaller and smaller,
Along with the miniaturization of component bodies, fine pattern shapes are often required.

The photoresist used for forming the pattern of the metal film is finished in a shape deviated from the pattern dimension drawn on the photomask due to the large thickness of the photoresist and the narrow pattern line width to be formed. Tend.

Although there is a demand for miniaturization of patterns by miniaturization of electronic parts, the pattern size that can be produced is restricted by the tendency of the finished shape of the photoresist.

In particular, in a thin film inductor element, generally, a pattern having a pattern width of about 10 μm and a film thickness of about 10 μm and having an aspect ratio of about 1 or smaller than a pattern shape is not generally used. Was becoming.

[0009]

As described above, in the conventional technique, for example, in order to manufacture a thin film inductor, even if a narrow pattern width is used as a pattern width to be formed,
It was formed with a width of about 10 μm.

The thin pattern shape is affected by the characteristics of the photoresist, and it becomes difficult to form the pattern shape drawn on the photomask as a photoresist pattern. The positive type photoresist is thin, and the negative type photoresist is thick. The pattern tended to be finished.

As an example of the problem, if the cross-sectional area of the conductor pattern is not secured in order to suppress the conductor resistance, the pattern of the inductor element will lead to deterioration of the Q value which is an important characteristic of the inductor element.

Further, in order to increase the inductance value, it is necessary to form a pattern having a large number of turns in a given area, and the pattern line width must be reduced.

To summarize the requirements for the pattern as the inductor element, the thickness of the pattern is increased in order to secure the cross-sectional area for increasing the Q value while reducing the pattern line width for increasing the inductance value. By making the thickness thicker, we are designing to balance the two.

Therefore, for example, when the pattern formation of the inductor element is performed by the additive plating method, the aspect ratio of the height with respect to the width of the pattern becomes 2 with the pattern line width of 5 μm and the pattern film thickness of 10 μm. Such a design is made.

When an inductor element having a pattern of the above-mentioned shape is designed, as shown in FIG. 9, a film necessary for pattern formation by an additive plating method is used by using a photomask having a line width of 5 μm according to the design. Even if a photoresist having a thickness is exposed and developed to form a photoresist pattern, in the case of the positive photoresist, the pattern line width of the photoresist is about 2 μm as shown in FIG.
m, and the pattern interval is about 8 μm, and the designed pattern shape cannot be formed.

Further, when the same processing is performed using a negative photoresist, most of the negative photoresist is
The line width is 10 μm due to the characteristics of the negative photoresist.
In the case of the pattern formation of less than the above, the pattern line width of the photoresist becomes thick and the interval between the photoresist patterns becomes narrow, so that the desired pattern shape cannot be obtained like the positive photoresist.

As described above, when the photoresist film is formed to be thick in order to perform the additive plating method, the pattern drawn on the photomask cannot be obtained, which is a major problem in the pattern formation of electronic parts. Was there.

The present invention has been made to solve the above problems, and an object of the present invention is to form a pattern of a desired shape on an insulating substrate without using a special material, and An object is to provide an electronic component having the pattern and a method for manufacturing the electronic component.

[0019]

As shown in the schematic view of the present invention shown in FIG. 1, by using a photomask drawn by changing the linewidth of the photomask from a desired linewidth, a photoresist pattern of a photoresist pattern is formed. It shows that the line width is obtained in a desired shape.

As a method for solving the above problems, the present invention according to claim 1 is characterized in that when a pattern is formed by an additive plating method, a line width different from the pattern line width is drawn. It is a method for manufacturing an electronic component in which a pattern is formed using the photomask described above.

According to the second aspect of the present invention, as shown in FIG. 5, a pattern is formed by using a photomask and a positive photoresist in which the line width of the photomask is drawn thinner than the pattern line width to be formed. It is a method of manufacturing an electronic component.

A third aspect of the present invention is a method of manufacturing an electronic component in which a line width of a photomask is drawn thicker than a pattern linewidth to be formed and a pattern is formed using a negative photoresist. It is characterized by being.

A fourth aspect of the present invention is a method of manufacturing an electronic component which is an inductor element in which a spiral or meander pattern is formed by the pattern formation according to any one of the first to third aspects. It is characterized by being.

The invention described in claim 5 is an electronic component using the method for manufacturing an electronic component according to any one of claims 1 to 4.

The photoresist used in the present invention can obtain the effect of the present invention in both positive type and negative type. However, in the case of a fine pattern, the use of the positive type photoresist provides a more excellent effect. be able to.

[0026]

DETAILED DESCRIPTION OF THE INVENTION An embodiment of the present invention will be described below with reference to an example of forming an inductor pattern.

As shown in FIG. 2, long side × short side × thickness 60
The following metal thin film 3 is deposited on the surface of an alumina substrate 4 having a size of x50x0.35 mm by a sputtering method.

With a two-layer metal thin film, chromium is deposited to a thickness of 20 nm and copper is deposited to a thickness of 400 nm.

As shown in FIG. 3, a photoresist 2 is applied on the metal thin film of the alumina substrate on which the metal thin film is deposited. In this embodiment, using a positive photoresist,
It was applied by spin coating so that the film thickness was about 14 μm.

There are spin coating method, dip coating method, spray coating method and the like as the method of applying the photoresist, but any method can be applied as long as a desired uniform film thickness can be obtained. Is.

In this embodiment, since a chip type thin film inductor having a spiral pattern having a pattern line width of 5 μm, a pattern interval of 5 μm and a film thickness of 10 μm is formed, as shown in FIG. 4, the pattern line width is 2.5 μm and the pattern interval is 2.5 μm. The photomask 1 formed to have a thickness of 7.5 μm is used.

In order to form a pattern on the photoresist film on the alumina substrate which has been prebaked, after performing exposure using a photomask having the pattern line width of 2.5 μm, the exposed alumina substrate is exposed. Develop.

The developed alumina substrate has a line width of 5 μm and an interval of 5 μm as shown in FIG.
m, and the photoresist pattern 5 having a film thickness of 14 μm
It was formed on the metal thin film 3 deposited on the alumina substrate.

A copper plating film 6 is deposited between the photoresist patterns so as to have a film thickness of about 13 μm on the alumina substrate having the photoresist patterns by an additive plating method, and then the resist pattern 5 is peeled off. Therefore, the line width is 5 μm, the interval is 5 μm, and the film thickness is 13 μm.
A copper plating film having a pattern of m was formed on an alumina substrate.

When the shape of the formed copper plating pattern was measured at five arbitrary points, the pattern line width was 4.8.
.About.5.3 .mu.m, the pattern interval was 4.7 to 5.2 .mu.m, and the pattern film thickness was 10 to 12 .mu.m.

The copper plating pattern obtained as described above is electrically short-circuited because the chromium thin film and the copper thin film deposited by the sputtering method remain on the alumina substrate. A copper plating pattern was formed on the alumina substrate by removing it by the etching method as shown in FIG.

In this embodiment, after a protective film made of epoxy resin is formed on a copper plating pattern formed on the alumina substrate as a post process, an inductor element is formed through steps such as forming end face electrodes and dividing into individual pieces. Was manufactured.

[0038]

The electronic component having the pattern according to the present invention formed by the above method can form a pattern having a desired line width even if the pattern has a pattern of less than 10 μm.

In particular, when the above technique is applied to the inductor element, there are the following advantages.

First, by forming a fine pattern of less than 10 μm, a wide range of inductance values can be easily obtained.

Secondly, by forming a pattern having a large aspect ratio, the resistance value can be lowered, so that a high Q value can be obtained.

As an example, the external dimensions are 1.0 × 0.5 mm.
In the 1005 size thin film inductor of
In the 0 μm pattern, the inductance value range is 27
Although it was up to nH, it was possible to manufacture up to 68 nH by using the 5 μm pattern according to the present invention.

Similarly, in the thin film inductor, the line width is 5
When a 68 nH inductor is manufactured with a pattern of μm, the Q value was about 8 in the conventional pattern with an aspect ratio of about 1, but by using the pattern with an aspect ratio of about 2 according to the present invention, A Q value of approximately 15 could be obtained, and the inductance and Q value could be greatly improved.

Further, as shown in FIG. 8, by combining this pattern and an insulating layer to form a multilayer stacked structure, a wider range of inductance values can be obtained.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of an embodiment of the present invention when applied to an inductor element.

FIG. 2 is a cross-sectional view of an alumina substrate having a metal thin film deposited thereon.

3 is a sectional view of the alumina substrate shown in FIG. 2 coated with a photoresist.

FIG. 4 is a sectional view of a state in which a photomask for performing exposure is used.

FIG. 5 is a cross-sectional view showing a state in which a developing process has been completed.

FIG. 6 is a sectional view showing a state in which a pattern is formed by plating.

FIG. 7 is a cross-sectional view in a state where etching is performed.

FIG. 8 is a cross-sectional view of an example in which multiple patterns are stacked in the present invention.

FIG. 9 is a cross-sectional view of a state where a conventional photomask is used.

FIG. 10 is a cross-sectional view of a photoresist pattern formed by a conventional technique.

[Explanation of symbols]

1 Photomask drawn with a line width narrower than the desired shape 2 Photoresist film 3 Metal thin film 4 Alumina substrate 5 Photoresist pattern 6 formed with the desired shape 6 Copper plating film 7 Insulating layer 8 Drawing with the desired shape Photomask 9 Photoresist pattern narrower than desired shape

Claims (5)

[Claims] 1. An electronic component having a pattern formed by an additive plating method on an insulating substrate or an insulating film, wherein a pattern line width of a photomask used for pattern formation is formed on the electronic component. And a pattern line width different from that of the electronic part manufacturing method. 2. The electronic component according to claim 1, wherein when patterning is performed using a positive photoresist,
A method of manufacturing an electronic component, which comprises forming a pattern using a photomask drawn thinly with respect to a pattern line width to be formed. 3. The electronic component according to claim 1, wherein when patterning is performed using a negative photoresist,
A method of manufacturing an electronic component, which comprises forming a pattern using a photomask drawn thicker than a pattern line width to be formed. 4. The method of manufacturing an electronic component according to claim 1, wherein the inductor component is formed by forming a spiral or meander pattern. 5. An electronic component using the method for manufacturing an electronic component according to any one of claims 1 to 4.