CN112186103A - Resistor structure and manufacturing method thereof - Google Patents
Resistor structure and manufacturing method thereof Download PDFInfo
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- CN112186103A CN112186103A CN202011085858.4A CN202011085858A CN112186103A CN 112186103 A CN112186103 A CN 112186103A CN 202011085858 A CN202011085858 A CN 202011085858A CN 112186103 A CN112186103 A CN 112186103A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000010408 film Substances 0.000 claims abstract description 206
- 239000010409 thin film Substances 0.000 claims abstract description 54
- 238000005530 etching Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical group [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 3
- 239000002241 glass-ceramic Substances 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 13
- 230000007797 corrosion Effects 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 98
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010420 art technique Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention provides a resistor structure and a manufacturing method thereof, wherein the resistor structure comprises the following steps: providing a product to be etched, wherein the product to be etched comprises a substrate, a resistance thin film and a plurality of layers of conduction band thin films, and the resistance thin film and the plurality of layers of conduction band thin films are sequentially positioned on the top surface of the substrate; selectively etching the multiple layers of conduction band films, reserving the conduction band film in the first area, and removing the conduction band films in other areas; and selectively etching the resistance film, reserving the resistance film in the second area, and removing the resistance films in other areas to form a required resistance structure. Compared with the manufacturing method in the prior art, the method provided by the invention reduces the corrosion times, shortens the time of exposing the resistance film and the conduction band film in the corrosive liquid, and improves the undercut phenomenon of the resistance film pattern.
Description
Technical Field
The invention relates to the technical field of hybrid integrated circuit chip manufacturing, in particular to a resistor structure and a manufacturing method thereof.
Background
With the continuous improvement of the integration degree of electronic products, the precision of the resistance film on the chip is higher and higher. In order to manufacture a resistor with a large resistance value in a small area, a resistor film with thin lines needs to be manufactured.
Fig. 1 to 4 show a method of manufacturing a fine type resistor, which is commonly used at present. As shown in fig. 1, a first photoresist layer 10 serving as a mask is formed on the surface of a product to be etched, and the first photoresist layer 10 covers a region where a conduction band is to be formed and a region where a resistor is to be formed; then, sequentially etching the multiple layers of conduction band films (for example, four layers of conduction band films, which are respectively distinguished from top to bottom by 11-14) exposed from the first photoresist layer 10 and the resistance film 15, wherein the etched structure is as shown in fig. 2; and then removing the first photoresist layer 10, forming a second photoresist layer 16 as a mask, as shown in fig. 3, covering the region where the conduction band is to be formed with the second photoresist layer 16, and then sequentially etching the conduction band films 11, 12, 13 and 14 to form the structure shown in fig. 4.
However, the above process is prone to cause a severe undercut phenomenon, which results in irregular line edges of the resistor film pattern, and the line edges are greatly different from the designed resistor film pattern, thereby being difficult to meet the requirement of precise resistors.
Disclosure of Invention
In view of the above, the present invention provides a resistor structure and a method for fabricating the same to improve undercut phenomenon and solve the problem of uneven line edge of the resistor film pattern.
In order to achieve the purpose, the invention provides the following technical scheme:
the first aspect of the present invention provides a method for manufacturing a resistor structure, including:
providing an article to be etched, wherein the article to be etched comprises a substrate, and a resistor thin film and a plurality of layers of conduction band thin films which are sequentially positioned on the top surface of the substrate, and the article to be etched is provided with a first region where a conduction band is to be formed and a second region where a resistor is to be formed;
selectively etching the multiple layers of conduction band films, reserving the conduction band film in the first area, and removing the conduction band films in other areas;
and selectively etching the resistance film, reserving the resistance film in the second area, and removing the resistance films in other areas to form a required resistance structure.
Optionally, selectively etching the multiple layers of the conduction band films includes:
forming a first mask layer on the top surface of the product to be etched, wherein the first mask layer covers the conduction band film in the first region and exposes the conduction band films in other regions;
sequentially corroding the multiple layers of conduction band films according to the sequence from top to bottom until the resistance film which is not covered by the first mask layer is exposed;
and removing the first mask layer.
Optionally, the etching of the multiple layers of the conductive band films sequentially comprises:
and sequentially immersing the products to be etched covered by the first mask layer into the corrosive liquid corresponding to the conduction band film to be corroded, and corroding the current conduction band film to be corroded.
Optionally, the first mask layer is a photoresist layer.
Optionally, the selectively etching the resistive film includes:
forming a second mask layer on the surface of the product to be etched, wherein the second mask layer covers the conduction band thin film in the first area and the resistance thin film in the second area, and exposes the resistance thin films in other areas;
corroding the resistance film which is not covered by the second mask layer;
and removing the second mask layer.
Optionally, the second mask layer is a photoresist layer.
Optionally, the conduction band film is two to four layers.
Optionally, the material of the conduction band thin film is Cr, Ni, Cu or Au, and the material of two adjacent conduction band thin films is different.
Optionally, the substrate is made of ceramic or microcrystalline glass; the resistance film is nickel chromium or chromium silicon.
A second aspect of the invention provides a resistor structure, which is manufactured by the manufacturing method as described in any one of the above.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
the resistor structure and the manufacturing method thereof provided by the invention have the advantages that the multilayer conduction band thin film on the surface of a product to be etched is etched, the conduction band thin film of the conduction band to be formed and the whole resistor thin film are reserved, then the resistor thin film is etched, the resistor thin film of the resistor to be formed is reserved, and finally the required resistor structure is formed. Compared with the manufacturing method in the prior art, the manufacturing method of the resistor structure provided by the invention has the advantages that the corrosion times are reduced, and the time for exposing the side walls of the conduction band film and the resistor film to the corrosive liquid is shortened, so that the undercutting phenomenon of the resistor film pattern is effectively improved, the problem of uneven line edges of the resistor film is solved, the performance of the finally obtained resistor structure is improved, and the requirement of a precision resistor can be met.
In addition, the corrosion times are reduced, and the time for corroding the single-layer conduction band film and the resistance film is not changed, so that the whole corrosion time is greatly shortened, and the processing efficiency of the resistance structure is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 to 4 are schematic structural diagrams illustrating a method for fabricating a resistor structure in the prior art;
FIG. 5 is a flow chart of a method for fabricating a resistor structure according to an embodiment of the present invention;
fig. 6 to 12 are schematic structural diagrams illustrating a method for manufacturing a resistor structure according to an embodiment of the invention;
FIG. 13 is a schematic structural diagram of a three-layer conduction band film according to another embodiment of the present invention;
FIG. 14 is a schematic structural diagram of two conduction band films according to another embodiment of the present invention.
Detailed Description
As described in the background art, the resistor film pattern etched by the existing method has a relatively serious undercut phenomenon, which results in irregular line edges of the resistor film. The inventors have found that the causes of such problems are mainly (1) a high concentration of the etching liquid and (2) that, when etching a certain film, the side walls of the other film are inevitably exposed to the etching liquid, i.e., the side walls of the conductive band film and the resistive film are in contact with the etching liquid for a long time. The concentration of the corrosive liquid is reduced, so that the corrosion efficiency is reduced and the corrosion effect is influenced; and simply shortening the etching time will result in residual etching, and also will affect the etching effect. In addition, the protective layers are additionally arranged outside the side walls of the conduction band thin film and the resistance thin film, so that the process difficulty is very high, and the realization is difficult in practical production.
Based on this, the present invention provides a resistor structure and a method for manufacturing the same, which reduces the etching times by adjusting the etching sequence, thereby shortening the time for contacting the side walls of the conduction band thin film and the resistor thin film with the etching solution, so as to overcome the above problems in the prior art, and specifically comprises:
providing an article to be etched, wherein the article to be etched comprises a substrate, and a resistor thin film and a plurality of layers of conduction band thin films which are sequentially positioned on the top surface of the substrate, and the article to be etched is provided with a first region where a conduction band is to be formed and a second region where a resistor is to be formed;
selectively etching the multiple layers of conduction band films, reserving the conduction band film in the first area, and removing the conduction band films in other areas;
and selectively etching the resistance film, reserving the resistance film in the second area, and removing the resistance films in other areas to form a required resistance structure.
The manufacturing method of the resistor structure provided by the invention comprises the steps of etching the multiple layers of conduction band thin films on the surface of a product to be etched, reserving the conduction band thin film in the first region of the conduction band to be formed and the whole resistor thin film, etching the resistor thin film, reserving the resistor thin film in the second region of the resistor to be formed, and finally forming the required resistor structure. Compared with the manufacturing method in the prior art, the manufacturing method of the resistor structure provided by the invention has the advantages that the corrosion times are reduced, the time of exposing the side walls of the conduction band film and the resistor film to a corrosion solution is effectively shortened, the undercut phenomenon of a resistor film graph is improved, the line edges of the resistor film in the finally obtained resistor structure are more orderly, and the requirement of precise resistors can be met.
The foregoing is a core idea of the present invention, and in order to make the above objects, features and advantages of the present invention more comprehensible, the following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a method for manufacturing a resistor structure, as shown in fig. 5, including:
s101: providing a product to be etched, wherein the product to be etched comprises a substrate, a resistance thin film and a plurality of layers of conduction band thin films, and the resistance thin film and the plurality of layers of conduction band thin films are sequentially positioned on the top surface of the substrate;
as shown in fig. 6, the article to be etched includes a substrate 20, and a resistance film 21 and at least two conduction band films, which are sequentially disposed on the top surface of the substrate 20. Figure 7 is a top view of the article to be etched shown in figure 6. As shown in fig. 7, the article to be etched includes a first region S1 where a conduction band is to be formed and a second region S2 where a resistance is to be formed. Specifically, the conductive tape film has a first region S1 where a conductive tape is to be formed, and the resistance film 21 has a second region S2 where a resistance is to be formed. Further, the orthographic projection of the first region S1 on the substrate 20 is located within the orthographic projection of the second region S2 on the substrate 20. In the embodiment of the present invention, only the second region S2 and the first region S1 are square regions for illustration, but the present invention is not limited thereto.
In this embodiment, the product to be etched has four layers of conduction band films, as shown in fig. 6, a first layer of conduction band film 22, a second layer of conduction band film 23, a third layer of conduction band film 24 and a fourth layer of conduction band film 25 are sequentially arranged from bottom to top.
Alternatively, the substrate 20 is a substrate material for a hybrid integrated circuit such as a ceramic substrate or microcrystalline glass, and the resistance film 21 and the conduction band film are both made of a metal material. The resistance thin film 21 may be nickel chromium or chromium silicon, the conduction band thin film may be Cr, Ni, Cu or Au, and the two adjacent conduction band thin films are made of different materials. The appropriate metal material can be selected according to the actual functional requirements.
S102: selectively etching the multiple layers of conduction band films, reserving the conduction band film in the first area, and removing the conduction band films in other areas;
in some embodiments of the present invention, selectively etching the plurality of layers of the conductive strip films includes:
forming a first mask layer on the top surface of the product to be etched, wherein the first mask layer covers the conduction band film in the first region and exposes the conduction band films in other regions;
sequentially etching the multiple layers of conduction band films according to the sequence from top to bottom to expose the resistance film which is not covered by the first mask layer;
and removing the first mask layer.
As shown in fig. 8, a first mask layer 26 is formed on the surface of the to-be-etched product, and the first mask layer 26 covers the conduction band film in the first region where the conduction band is to be formed and exposes the conduction band film in the other region. Optionally, first masking layer 26 is a photoresist layer. The process of forming the first mask layer 26 on the surface of the article to be etched includes: and forming a photoresist layer on the surface of the product to be etched by adopting processes such as coating and the like, and then covering the residual photoresist layer on the conduction band film of the first region of the conduction band to be formed by adopting processes such as exposure, development and the like.
After the first mask layer 26 is formed on the product to be etched, sequentially etching the multiple layers of conduction band films in the order from top to bottom (i.e., from top to bottom in fig. 8), as shown in fig. 9, etching the fourth layer of conduction band film 25, the third layer of conduction band film 24, the second layer of conduction band film 23, and the first layer of conduction band film 22 on the surface of the product to be etched, respectively, and reserving the four layers of conduction band films in the first region and the resistance films 21 in all regions. Thereafter, first masking layer 26 is removed.
S103: and selectively etching the resistance film, reserving the resistance film in the second area, and removing the resistance films in other areas to form a required resistance structure.
In some embodiments of the present invention, selectively etching the resistive thin film includes:
forming a second mask layer on the surface of the product to be etched, wherein the second mask layer covers the conduction band thin film in the first area and the resistance thin film in the second area, and exposes the resistance thin films in other areas;
corroding the resistance film which is not covered by the second mask layer;
and removing the second mask layer.
As shown in fig. 10, after the first mask layer 26 is removed, a second mask layer 27 is formed on the surface of the to-be-etched product, and the second mask layer 27 covers the four layers of conductive tape films remaining in step S102 and the resistance film 21 in the second region where the resistance is to be formed.
Optionally, the second mask layer 27 is a photoresist layer. The step of forming the second mask layer 27 on the surface of the to-be-etched product includes covering a photoresist on the surface of the to-be-etched product, then exposing and developing the photoresist, and reserving the photoresist on the surface of the conduction band film in the first region and the surface of the resistance film 21 in the second region. Thereafter, as shown in fig. 11, the resistance thin film 21 is etched to remove the resistance thin film 21 exposed by the second mask layer 27, and the resistance thin film 21 in the second region where the resistance is to be formed and the four conduction band thin films in the first region remain. Thereafter, the second mask layer 27 is removed, and the resistor structure shown in fig. 12 is formed.
It should be noted that, in some embodiments of the present invention, sequentially etching the multiple layers of conductive tape films includes: and sequentially immersing the products to be etched covered by the first mask layer into the corrosive liquid corresponding to the conduction band film to be corroded, and corroding the current conduction band film to be corroded.
In some embodiments of the present invention, the to-be-etched product includes four layers of conduction band films, which are respectively a first conduction band film 22 to a fourth conduction band film 25, and the first conduction band film 22 to the fourth conduction band film 25 are sequentially located on the surface of the resistance film 21, and then sequentially etching the multiple layers of conduction band films on the surface of the to-be-etched product includes:
immersing the product to be etched into a corrosive liquid corresponding to the material of the fourth layer of conduction band film 25 to corrode the fourth layer of conduction band film 25 and expose the third layer of conduction band film 24 which is not covered by the first mask layer 26;
immersing the product to be etched into a corrosive liquid corresponding to the material of the third conduction band film 24 to corrode the third conduction band film 24 and expose the second conduction band film 23 which is not covered by the first mask layer 26;
immersing the product to be etched into a corrosive liquid corresponding to the material of the second layer of conduction band film 23 to corrode the second layer of conduction band film 23 and expose the first layer of conduction band film 22 which is not covered by the first mask layer 26;
and immersing the product to be etched into an etching solution corresponding to the material of the first conduction band film 22 to etch the first conduction band film 22 and expose the resistance film 21 uncovered by the first mask layer 26.
In the embodiment of the invention, taking four layers of conduction band films as an example, only 5 times of corrosion is needed to be carried out on a product to be etched, namely, the first layer of conduction band film 22 to the fourth layer of conduction band film 25 and the resistance film 21 are respectively corroded; according to the manufacturing method in the prior art, the conduction band films 11, 12, 13 and 14 are etched for 4 times, and then the conduction band films 11, 12, 13 and 14 and the resistance film 15 are etched for 5 times, and 9 times in total. Therefore, compared with the prior art, the manufacturing method provided by the embodiment of the invention greatly reduces the corrosion times, obviously shortens the time of exposing the conduction band film and the side wall of the resistance film 21 to the corrosion liquid, further can improve the undercut phenomenon of the resistance film pattern, and improves the line precision. In addition, the corrosion times are obviously reduced, the processing efficiency is improved, and the time cost is reduced.
In other embodiments of the present invention, as shown in fig. 13, the conduction band film may also be three layers, and the etching sequentially performed on the multiple conduction band films on the surface of the to-be-etched product includes, in order from bottom to top, a first conduction band film 22a to a third conduction band film 24 a:
immersing the product to be etched into a corrosive liquid corresponding to the material of the third conduction band film 24a to corrode the third conduction band film 24a and expose the second conduction band film 23a which is not covered by the first mask layer 26;
immersing the product to be etched into a corrosive liquid corresponding to the material of the second layer of conduction band film 23a to corrode the second layer of conduction band film 23a and expose the first layer of conduction band film 22a which is not covered by the first mask layer 26;
and immersing the product to be etched into an etching solution corresponding to the material of the first conduction band film 22a to etch the first conduction band film 22a and expose the resistance film 21 uncovered by the first mask layer 26.
In this embodiment, the etching of the first layer of the conduction band film 22a to the third layer of the conduction band film 24a and the resistance film 21 is performed only 4 times; whereas for the same structure of the article to be etched, 7 etches would be required if the prior art technique were employed. Correspondingly, by adopting the manufacturing method of the embodiment, the time for exposing the conduction band film and the resistance film 21 in the corrosive liquid can be shortened, the undercut phenomenon is avoided, and the line precision is improved.
In other embodiments of the present invention, as shown in fig. 14, the conduction band film may also have two layers, that is, a first conduction band film 22b and a second conduction band film 23b, where the first conduction band film 22b is located between the second conduction band film 23b and the resistance film 21, and then sequentially etching the multiple conduction band films on the surface of the product to be etched includes:
immersing the product to be etched into a corrosive liquid corresponding to the material of the second layer of conduction band film 23b to corrode the second layer of conduction band film 23b and expose the first layer of conduction band film 22b which is not covered by the first mask layer 26;
and immersing the product to be etched into an etching solution corresponding to the material of the first conduction band film 22b to etch the first conduction band film 22b and expose the resistance film 21 which is not covered by the first mask layer 26.
In this embodiment, the first conduction band film 22b, the second conduction band film 23b and the resistance film 21 are etched respectively only by 3 times; whereas for the same structure of the article to be etched, 5 etches would be required if the prior art technique were employed. Correspondingly, by adopting the manufacturing method of the embodiment, the time for exposing the side walls of the conduction band film and the resistance film 21 to the corrosive liquid can be shortened, the undercut phenomenon is avoided, and the line precision is improved.
In the embodiment of the present invention, the multiple layers of conduction band films may also be more layers of conduction band films, which are not described in detail herein. By adopting the manufacturing method provided by the embodiment of the invention, the corrosion times are n +1, wherein n is the number of layers of the conduction band film; whereas if according to the prior art the number of etchings is 2n + 1. Therefore, according to the manufacturing method of the embodiment of the invention, the etching times are reduced by n times. That is, the more the number of layers of the conduction band film is, the more the number of times of reduction of the number of times of etching is, the time for the conduction band film and the side wall of the resistance film 21 to contact the etching solution can be shortened accordingly, the undercut phenomenon is avoided, and the line precision is improved.
The embodiment of the invention also provides a resistor structure, and the resistor structure is manufactured by adopting the manufacturing method provided by any one of the embodiments.
In some embodiments of the present invention, as shown in fig. 11, the resistor structure includes a substrate 20, and a resistor film 21 and multiple layers of conducting strip films sequentially located on a surface of the substrate 20, wherein the resistor film 21 is located in a second region, the conducting strip films are located in a first region, and the multiple layers of conducting strip films form electrodes of the resistor film 21, so as to electrically connect the resistor film 21 to an external circuit.
In the structure shown in fig. 11, the description will be given only by taking an example in which the plurality of band guide films include four band guide films, that is, the first band guide film 22, the second band guide film 23, the third band guide film 24, and the fourth band guide film 25, and is not limited thereto. In other embodiments, as shown in fig. 13, the multiple layers of the conductive tape film may further include three layers of the conductive tape film; as shown in fig. 14, the multiple layers of the conductive tape films may further include two layers of conductive tape films, which are not described in detail herein.
The resistor structure and the manufacturing method thereof provided by the invention have the advantages that the multilayer conduction band thin film on the surface of a product to be etched is etched, the conduction band thin film and the resistor thin film in the first area of a conduction band to be formed are reserved, then the resistor thin film is etched, the resistor thin film in the second area of a resistor to be formed is reserved, and finally the required resistor structure is formed.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A method for manufacturing a resistor structure is characterized by comprising the following steps:
providing an article to be etched, wherein the article to be etched comprises a substrate, and a resistor thin film and a plurality of layers of conduction band thin films which are sequentially positioned on the top surface of the substrate, and the article to be etched is provided with a first region where a conduction band is to be formed and a second region where a resistor is to be formed;
selectively etching the multiple layers of conduction band films, reserving the conduction band film in the first area, and removing the conduction band films in other areas;
and selectively etching the resistance film, reserving the resistance film in the second area, and removing the resistance films in other areas to form a required resistance structure.
2. The method of claim 1, wherein selectively etching the plurality of layers of the conduction band films comprises:
forming a first mask layer on the top surface of the product to be etched, wherein the first mask layer covers the conduction band film in the first region and exposes the conduction band films in other regions;
sequentially corroding the multiple layers of conduction band films according to the sequence from top to bottom until the resistance film which is not covered by the first mask layer is exposed;
and removing the first mask layer.
3. The method of manufacturing according to claim 2, wherein the sequentially etching the plurality of layers of the conductive tape films comprises:
and sequentially immersing the products to be etched covered by the first mask layer into the corrosive liquid corresponding to the conduction band film to be corroded, and corroding the current conduction band film to be corroded.
4. The method of claim 2 or 3, wherein the first mask layer is a photoresist layer.
5. The method of claim 1, wherein selectively etching the resistive film comprises:
forming a second mask layer on the surface of the product to be etched, wherein the second mask layer covers the conduction band thin film in the first area and the resistance thin film in the second area, and exposes the resistance thin films in other areas;
corroding the resistance film which is not covered by the second mask layer;
and removing the second mask layer.
6. The method of claim 5, wherein the second mask layer is a photoresist layer.
7. The method of manufacturing according to any one of claims 1 to 3, wherein the tape film has two to four layers.
8. The manufacturing method of claim 7, wherein the material of the conduction band thin film is Cr, Ni, Cu or Au, and the material of two adjacent conduction band thin films is different.
9. The manufacturing method according to any one of claims 1 to 3 and 5 to 6, wherein the substrate is made of ceramic or glass ceramics; the resistance film is nickel chromium or chromium silicon.
10. A resistor structure, characterized in that it is manufactured by the method of any one of claims 1 to 9.
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| CN103025057A (en) * | 2011-09-22 | 2013-04-03 | 日本特殊陶业株式会社 | Wiring substrate and method of manufacturing the same |
| CN107742607A (en) * | 2017-08-31 | 2018-02-27 | 重庆中科渝芯电子有限公司 | A kind of method that film resistor is made of ICP dry etchings |
| TWI705462B (en) * | 2019-12-18 | 2020-09-21 | 光頡科技股份有限公司 | Thin film resistor element and manufacturing method thereof |
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| CN103025057A (en) * | 2011-09-22 | 2013-04-03 | 日本特殊陶业株式会社 | Wiring substrate and method of manufacturing the same |
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