US2019096A - Production of suppression layer photocells - Google Patents
Production of suppression layer photocells Download PDFInfo
- Publication number
- US2019096A US2019096A US679285A US67928533A US2019096A US 2019096 A US2019096 A US 2019096A US 679285 A US679285 A US 679285A US 67928533 A US67928533 A US 67928533A US 2019096 A US2019096 A US 2019096A
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- US
- United States
- Prior art keywords
- copper
- layer
- oxide
- cell
- suppression layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000001629 suppression Effects 0.000 title description 18
- 238000004519 manufacturing process Methods 0.000 title description 7
- 239000010410 layer Substances 0.000 description 48
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 40
- 229910052802 copper Inorganic materials 0.000 description 40
- 239000010949 copper Substances 0.000 description 40
- 239000002184 metal Substances 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002585 base Substances 0.000 description 18
- 150000002739 metals Chemical class 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 9
- 229940112669 cuprous oxide Drugs 0.000 description 9
- 239000010931 gold Substances 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000003513 alkali Substances 0.000 description 5
- 239000010970 precious metal Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
- H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
Definitions
- This invention relates to improvements in suppression layer cathodes for photo cells and the like and to a method for manufacturing the same.
- An object of the invention is to provide a cell of the aforementioned character having improved sensitivity and efficiency. 7
- Another object is to provide a cell of great durability.
- Another object is to provide a cell which can be easily manufactured.
- Another object is to provide a method for manthe aforementioned character.
- Figure 1 is a cross sectional view of the construction of a cell as used heretofore
- Fig. 2 is a similar view of a cell constructed in accordance with my invention.
- the suppression layer photo-cells were hitherto produced, for example in the .case of the coppercuprous oxide ,cell, by heating a metallic copper plate to about-1020 C. for some time in a furnace in the presence of oxygen.
- the known suppression layer photo-cell is illustrateddiagrammatically in section in Fig. l.
- the cell removed from the furnace shows on its surface copper oxide which is removed by suitable processes, so that the cuprous oxide layer 3 is exposed which is located under the copper oxide and has grown on the mother copper I.
- the very thin hypothetic suppression layer 2 which is permeable for the electrons only in one direction, is situated between the cuprous oxide layer 3 and the metallic copper support (mother copper) I.
- the mother copper plate I serves as one of the electrodes of the finished suppression layer cell, whereas usually a thin metal layer 4 applied on the cuprous oxide layer 3 by known processes, such as cathode atomizing, serves as second or counter electrode.
- the photo-electric effect of such suppression layer photo cells can be considerably increased if the metallic copper plate I, in the case of a copper-cuprous-oxide cell, is coated with a layer 5 of another metal as shown in Fig.2 before being brought to a high temperature.
- the coating 5 may be applied to the mother copper plate I by cathode atomizing. electrolysis, by a spraying process or by any other suitable process. If, for example, a copper plate I is coated with a gold layer 5 before being brought to a high temperature, this gold layer 5 remains on the copper after the finishing of the cell or is partly alloyed with the latter at its sur: face and the cuprous-oxide layer 3 has formed over the gold layer 5.
- the metal layer 5, applied to the metallic copper I, may be extremely thin, so thin that it is translucent.
- Such a cell also presents the advantage over the known cells as regards production, that the cuprous oxide 3 uniformly covers the whole surface of the cell and chipping off of a portion of the cuprous oxide layer when removing the cell from the furnace or during the cooling, as often happens in the production of the known cells, being .avoided.
- the copper plate I in the case of copper-cuprous oxide cells, may also be covered with two or more thin, superposed metal layers 5 before it is brought to a high temperature.
- the new'process is particularly practical if the mother metal, on which the thin metal coating 5 is applied, is not a pure metal but a metal alloy which may consist of two or more components. 49 Precious metals .are particularly suitable as coating metal 5 in the sense of the invention, but any of the metals may be employed except the metals of the alkali group. If, however, more than one coating layer 5 is to be employed, thin layers of metals which can easily oxidize, may be applied over or under the precious metal layer. Fig. 2 must be regarded merely as a diagrammatic view.
- suppression layer cathodes for photo cells and the like comprising a copper base and a coating of an oxide thereof, the step which consists in coating said base with a thin layerof I another metal not belonging to the alkali group of metals and thereafter heating the so coated base to thereby cause copper to difiuse into and to form an alloy with said other metal and further to oxidize at least part of the copper so diffused to form said oxide coating overlying said alloy.
- suppression layer cathodes for photo cells'and the like comprising a copper base'and a coating of an oxide thereof, the step which consists in coating said base with a thin layer of a precious metal and thereafter heating the so coated base to thereby cause copper to difiuse into and to form an alloy with said precious metal and further to oxidize at least some of, the copper so diffused to form an oxide of said copper overlying the surface of said alloy.
- suppression layer cathodes for photo cells and the like comprising a copper base and a coating of an oxide thereof
- the step which consists in coating said base'with a plurality of successive thin layers of different other metals not belonging to the alkali group of metals and thereafter heating the so coated copper base to thereby cause copper 'to diifuse into and to form alloys with said different other metals and further to oxidize at least some of the copper so diffused to form an oxide of said copper overlying said alloys.
- a suppression layer photo cell comprising, in combination with a copper base and a layer of an oxide thereof, an alloy of said copper and another metal not belonging to the alkali group of metals interposed between said copper base and said layer and adhering to said copper base and said oxide by an inter-molecular-bond.
- a suppression layer photo cell comprising, in combination with a copper base and a layer of anoxide thereof, an alloy of said copper and a precious metal interposed between said copper base and said layer and adhering to said copper base and said oxide by an inter-molecular bond.
- a suppression layer photo cell comprising, in combination a copper base and a layer of an oxide thereof, a plurality of thin layers of alloys of different other metals not belonging to the alkali group of metals and said copper, said layers being interposed between said copper base and said oxide layer, said copper base and said layers adhering to one another at their respective boundaries by an inter-molecular bond.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Description
Oct. 29, 1935. RQTHER 2,619,096
PRODUCTION OF SUPPRESSION LAYER PHOTOOELLS Filed July 7, 1933 -IIIIIIIIII Franz R t/ver attorney ufacturing a cell of Patented Oct. 29, 1935 UNITED STATES PRODUCTION OF SUPPRESSION LAYER PHOTOCELLS Franz Bother, Paris, France Application July 7, 1933, Serial No. 679,285 In Germany July8, 1932 6 Claims.
This inventionrelates to improvements in suppression layer cathodes for photo cells and the like and to a method for manufacturing the same.
An object of the invention is to provide a cell of the aforementioned character having improved sensitivity and efficiency. 7
Another object is to provide a cell of great durability.
Another object is to provide a cell which can be easily manufactured.
Another object is to provide a method for manthe aforementioned character.
Other objects and advantages will hereinafter appear.
An embodiment of my invention'will be explained in the following description with reference to the appended drawing in which Figure 1 is a cross sectional view of the construction of a cell as used heretofore, while Fig. 2 is a similar view of a cell constructed in accordance with my invention.
The suppression layer photo-cells were hitherto produced, for example in the .case of the coppercuprous oxide ,cell, by heating a metallic copper plate to about-1020 C. for some time in a furnace in the presence of oxygen.
The known suppression layer photo-cell is illustrateddiagrammatically in section in Fig. l.
The cell removed from the furnace shows on its surface copper oxide which is removed by suitable processes, so that the cuprous oxide layer 3 is exposed which is located under the copper oxide and has grown on the mother copper I. The very thin hypothetic suppression layer 2 which is permeable for the electrons only in one direction, is situated between the cuprous oxide layer 3 and the metallic copper support (mother copper) I. The mother copper plate I serves as one of the electrodes of the finished suppression layer cell, whereas usually a thin metal layer 4 applied on the cuprous oxide layer 3 by known processes, such as cathode atomizing, serves as second or counter electrode.
It has now been found that the photo-electric effect of such suppression layer photo cells can be considerably increased if the metallic copper plate I, in the case of a copper-cuprous-oxide cell, is coated with a layer 5 of another metal as shown in Fig.2 before being brought to a high temperature. The coating 5 may be applied to the mother copper plate I by cathode atomizing. electrolysis, by a spraying process or by any other suitable process. If, for example, a copper plate I is coated with a gold layer 5 before being brought to a high temperature, this gold layer 5 remains on the copper after the finishing of the cell or is partly alloyed with the latter at its sur: face and the cuprous-oxide layer 3 has formed over the gold layer 5. Consequently over the 5 mother copper I there is besides the known thin suppression layer 2 also the gold or gold alloy layer 5 and above this the cuprous oxide layer. Such a suppression layer photo-celhhowever, as compared with a similarcell but without the gold layer 5 previously applied onto the copper I, shows about 10 times greater photo-electric effect or a ten times greater energy yield under otherwise similar conditions.
The metal layer 5, applied to the metallic copper I, may be extremely thin, so thin that it is translucent. Such a cell also presents the advantage over the known cells as regards production, that the cuprous oxide 3 uniformly covers the whole surface of the cell and chipping off of a portion of the cuprous oxide layer when removing the cell from the furnace or during the cooling, as often happens in the production of the known cells, being .avoided. The copper plate I, in the case of copper-cuprous oxide cells, may also be covered with two or more thin, superposed metal layers 5 before it is brought to a high temperature.
By this process other metals besides copper may be employed as mother metal I for producing suppression layer photo cells. The copper I under the applied gold layer 5 diff-uses into and through the thin gold layer at the production temperature of the cell, so that the oxygen compounds of'the copper then form on the gold or gold alloy layer 5.
The new'process is particularly practical if the mother metal, on which the thin metal coating 5 is applied, is not a pure metal but a metal alloy which may consist of two or more components. 49 Precious metals .are particularly suitable as coating metal 5 in the sense of the invention, but any of the metals may be employed except the metals of the alkali group. If, however, more than one coating layer 5 is to be employed, thin layers of metals which can easily oxidize, may be applied over or under the precious metal layer. Fig. 2 must be regarded merely as a diagrammatic view.
I claim:
1. In the process of producing suppression layer cathodes for photo cells and the like, comprising a copper base and a coating of an oxide thereof, the step which consists in coating said base with a thin layerof I another metal not belonging to the alkali group of metals and thereafter heating the so coated base to thereby cause copper to difiuse into and to form an alloy with said other metal and further to oxidize at least part of the copper so diffused to form said oxide coating overlying said alloy.
2. In the process of producing suppression layer cathodes for photo cells'and the like, comprising a copper base'and a coating of an oxide thereof, the step which consists in coating said base with a thin layer of a precious metal and thereafter heating the so coated base to thereby cause copper to difiuse into and to form an alloy with said precious metal and further to oxidize at least some of, the copper so diffused to form an oxide of said copper overlying the surface of said alloy.
3. In the process of producing suppression layer cathodes for photo cells and the like, comprising a copper base and a coating of an oxide thereof, the step which consists ,in coating said base'with a plurality of successive thin layers of different other metals not belonging to the alkali group of metals and thereafter heating the so coated copper base to thereby cause copper 'to diifuse into and to form alloys with said different other metals and further to oxidize at least some of the copper so diffused to form an oxide of said copper overlying said alloys.
4. A suppression layer photo cell comprising, in combination with a copper base and a layer of an oxide thereof, an alloy of said copper and another metal not belonging to the alkali group of metals interposed between said copper base and said layer and adhering to said copper base and said oxide by an inter-molecular-bond.
5. A suppression layer photo cell comprising, in combination with a copper base and a layer of anoxide thereof, an alloy of said copper and a precious metal interposed between said copper base and said layer and adhering to said copper base and said oxide by an inter-molecular bond.
6. A suppression layer photo cell comprising, in combination a copper base and a layer of an oxide thereof, a plurality of thin layers of alloys of different other metals not belonging to the alkali group of metals and said copper, said layers being interposed between said copper base and said oxide layer, said copper base and said layers adhering to one another at their respective boundaries by an inter-molecular bond.
FRANZ ROTHER.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DER0085358 | 1932-07-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2019096A true US2019096A (en) | 1935-10-29 |
Family
ID=7417328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US679285A Expired - Lifetime US2019096A (en) | 1932-07-08 | 1933-07-07 | Production of suppression layer photocells |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US2019096A (en) |
| GB (1) | GB403041A (en) |
| NL (1) | NL37041C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2721966A (en) * | 1950-06-22 | 1955-10-25 | Westinghouse Brake & Signal | Manufacture of dry surface contact rectifiers |
-
0
- NL NL37041D patent/NL37041C/xx active
-
1933
- 1933-07-07 US US679285A patent/US2019096A/en not_active Expired - Lifetime
- 1933-07-10 GB GB19540/33A patent/GB403041A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2721966A (en) * | 1950-06-22 | 1955-10-25 | Westinghouse Brake & Signal | Manufacture of dry surface contact rectifiers |
Also Published As
| Publication number | Publication date |
|---|---|
| NL37041C (en) | 1900-01-01 |
| GB403041A (en) | 1933-12-14 |
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