JPS5889841A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the formation of a crack up to the inside of a semiconductor integrated circuit, and to obstruct the crack at the stage of a scribing line by shaping stepped difference with others except the scribing line to the scribing line. CONSTITUTION:Ions are diffused to a silicon semiconductor substrate 1 and the whole is oxidized, and the insulating film 2 of a section corresponding to the scribing line is removed through a photoetching method. The section functions as a current supply source for the next anode oxidation while stepped difference with the scribing line is formed to the section. Aluminum is evaporated onto the whole surface, and wiring form and the scribing line section are changed into aluminum oxide (Al2O3) through anodic oxidation. According to circumstances, a layer insulating film 4, two layer aluminum 5 and a protective film 6 are shaped onto one layer wiring through anodic oxidation. The layer insulating film 4 is previously left at that time lest aluminum oxide (Al2O3) should be eroded through the etching of two layer aluminum and the protective film, the exfoliation of PR, etc.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device, and particularly to a scribe line structure of a semiconductor integrated circuit device.

Semiconductor integrated circuit devices are generally manufactured by separating a semi-integrated wafer into individual pellets. Traditionally, this process was performed using a diamond point, but recently the scribing method using a guissing gun has become common.

Further automation is progressing, and fully automatic dicing saws are being developed. By the way, in the conventional manufacturing method, if there is aluminum on the scribe line during scribing by dicing, the aluminum will curl up.
, resulting in a whisker-like appearance and a decrease in pelletizing yield and assembly yield. For this reason, the scribe line requires a structure other than aluminum. However, when aluminum oxide (Am!*Os') was used instead of this aluminum, cracks persisted during pelletizing, causing a serious problem in terms of reliability. .

The present invention provides a scribe line structure for a semiconductor integrated circuit device 411 suitable for a fully automatic dicing saw, which solves the problems that occur during conventional pelletizing.

IIIk of the present invention is applied to the scribe line before forming the scribe line on the ↓ surface of the semiconductor substrate.

The method of manufacturing a semiconductor device includes the step of removing an insulating film from a portion where the semiconductor device is removed to create a step difference. Then, it is desirable to form an aluminum leek stave on the surface of the substrate including the portion corresponding to the scribe line, and then oxidize the aluminum to form an aluminum oxide film.

According to the present invention, cracks can be stopped at the step of the scribe line without extending into the interior of the semiconductor integrated circuit by providing a step difference between the scribe line and the other portions. Furthermore, since the scribe line recognition line of the fully automatic dicing saw is illuminated from the top of the wafer,
Recognition accuracy and speed are determined by the difference in reflectance. In this case, it is essential that the scribe line material be uniform, but as mentioned above, aluminum oxide (AjmOs)
If you use , you will get a uniform film quality and the recognition part of the fully automatic dicing saw will recognize it well.

Hereinafter, the present invention will be explained in detail using examples.

FIGS. 1 and 2 are cross-sectional views of a semiconductor device showing an embodiment of the present invention. Diffusion is carried out in a silicon semiconductor substrate 1 during the manufacturing process of an integrated circuit.

After oxidation, use photo-etching! Risk write lIIi! A portion of the insulating film 2 is removed. This part is rounded to create a difference in level from the next anode Clive wire. Next, after aluminum is vapor-deposited on the entire surface, the wiring type and the scribe line portion are changed to aluminum oxide (60 seconds) by anodizing. FIG. 2 shows another embodiment. This is an interlayer insulating film 4 on top of a single layer of anodic oxidation. Double layer aluminum 5. A protective film 6 was applied to show the structure. At this time, double layer aluminum, protective film processing,
Aluminum oxide rim (human jsos>
The interlayer insulation 1 to 4 is left in place to prevent damage.

As described above, according to the present invention, blanking can be easily performed using a fully automatic dicing saw, and a high yield can be obtained.

[Brief explanation of the drawing]

FIGS. 1 and 2 are cross-sectional views showing embodiments of the semiconductor integrated circuit of the present invention.

Claims (1)

[Claims] A semiconductor device and manufacturing method characterized in that the semiconductor device manufacturing method includes a step of removing an insulating film in a portion corresponding to the scribe line to form a step before forming a scribe line on the main surface of a semiconductor substrate.