US20190083918A1 - Manufacturing apparatus and exhaust gas treatment apparatus - Google Patents

Manufacturing apparatus and exhaust gas treatment apparatus Download PDF

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Publication number
US20190083918A1
US20190083918A1 US15/901,944 US201815901944A US2019083918A1 US 20190083918 A1 US20190083918 A1 US 20190083918A1 US 201815901944 A US201815901944 A US 201815901944A US 2019083918 A1 US2019083918 A1 US 2019083918A1
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Prior art keywords
pipe
exhaust gas
waste liquid
exhaust
opening area
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English (en)
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Rempei Nakata
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Assigned to KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORP. reassignment KABUSHIKI KAISHA TOSHIBA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NAKATA, REMPEI
Assigned to TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, KABUSHIKI KAISHA TOSHIBA reassignment TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION CORRECTIVE ASSIGNMENT TO CORRECT THE SECOND ASSIGNEE'S NAME PREVIOUSLY RECORDED ON REEL 044997 FRAME 0451. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Assignors: NAKATA, REMPEI
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/002—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by condensation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D45/00—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces
    • B01D45/04—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia
    • B01D45/08—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia by impingement against baffle separators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
    • B01D47/02—Separating dispersed particles from gases, air or vapours by liquid as separating agent by passing the gas or air or vapour over or through a liquid bath
    • B01D47/024—Separating dispersed particles from gases, air or vapours by liquid as separating agent by passing the gas or air or vapour over or through a liquid bath by impinging the gas to be cleaned essentially in a perpendicular direction onto the liquid surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
    • B01D47/05—Separating dispersed particles from gases, air or vapours by liquid as separating agent by condensation of the separating agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
    • B01D47/06—Spray cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/14—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by absorption
    • B01D53/1456—Removing acid components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/14—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by absorption
    • B01D53/18—Absorbing units; Liquid distributors therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • B01D53/77—Liquid phase processes
    • B01D53/78—Liquid phase processes with gas-liquid contact
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/20—Halogens or halogen compounds
    • B01D2257/204—Inorganic halogen compounds
    • B01D2257/2045—Hydrochloric acid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/20—Halogens or halogen compounds
    • B01D2257/204—Inorganic halogen compounds
    • B01D2257/2047—Hydrofluoric acid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/55—Compounds of silicon, phosphorus, germanium or arsenic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/55—Compounds of silicon, phosphorus, germanium or arsenic
    • B01D2257/553—Compounds comprising hydrogen, e.g. silanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2258/00—Sources of waste gases
    • B01D2258/02—Other waste gases
    • B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing

Definitions

  • Embodiments described herein relate generally to a manufacturing apparatus and an exhaust gas treatment apparatus.
  • a film and a pattern are formed on a substrate by using reactive gas.
  • the film and the pattern are formed by increasing the temperature of the substrate to flow the reactive gas such as a source gas and an etching gas to a process chamber, and then, adjusting a flow rate and a pressure of the reactive gas.
  • the exhaust gas including the reactive gas which has not been consumed in the process chamber and reaction by-product gas generated by reaction is discharged from the process chamber to the outside of the manufacturing apparatus through an exhaust pipe, an exhaust pump, a detoxifying device, and the like.
  • the exhaust gas As the exhaust gas is discharged from the process chamber and passes through the exhaust pipe, the exhaust gas is condensed by being cooled and changed to the droplets or the exhaust gas is sublimated to be the solid particles.
  • the droplets and the solid particles cause clogging of the exhaust pipe and a failure of the exhaust pump.
  • the solid particles are generated as a product and the exhaust pipe is clogged when the detoxifying device detoxifies the exhaust gas.
  • the droplets and the solid particles derived from the exhaust gas include a substance which generates harmful gas and a substance having ignition properties, which may risk the maintenance work.
  • FIG. 1 is a schematic diagram of an exemplary manufacturing apparatus according to a first embodiment
  • FIG. 2 is a schematic diagram of an exemplary manufacturing apparatus according to a second embodiment
  • FIG. 3 is a schematic diagram of an exemplary manufacturing apparatus according to a third embodiment
  • FIG. 4 is a schematic diagram of an exemplary exhaust gas treatment apparatus according to a fourth embodiment
  • FIG. 5 is a schematic diagram of an example of a restrictor and a capturing plate according to the fourth embodiment.
  • FIG. 6 is a schematic diagram of an exemplary exhaust gas treatment apparatus according to a fifth embodiment.
  • a manufacturing apparatus is a manufacturing apparatus of a semiconductor device or a liquid crystal device including a process chamber discharging exhaust gas; a waste liquid discharger discharging waste liquid including a part of the exhaust gas; a first pipe provided between the process chamber and the waste liquid discharger, the first pipe having a first opening area in a cross section in a direction perpendicular to a moving direction of the exhaust gas; a second pipe provided between the first pipe and the waste liquid discharger, the second pipe having a second opening area smaller than the first opening area in a cross section in the direction perpendicular to the moving direction of the exhaust gas; and a third pipe connected to the first pipe, the third pipe supplying a condensing agent having a normal boiling point of equal to or higher than 25° C. to the first pipe.
  • a manufacturing apparatus is a manufacturing apparatus of a semiconductor device or a liquid crystal device including a process chamber discharging exhaust gas; a waste liquid discharger discharging waste liquid including a part of the exhaust gas; a first pipe provided between the process chamber and the waste liquid discharger, the first pipe having a first opening area in a cross section in a direction perpendicular to a moving direction of the exhaust gas; a second pipe provided between the first pipe and the waste liquid discharger, the second pipe having a second opening area smaller than the first opening area in a cross section in the direction perpendicular to the moving direction of the exhaust gas; and a third pipe connected to the first pipe, the third pipe supplying a condensing agent having a normal boiling point of equal to or higher than 25° C. to the first pipe.
  • FIG. 1 is a schematic diagram of an exemplary manufacturing apparatus according to the first embodiment.
  • the exemplary manufacturing apparatus according to the first embodiment is a film forming apparatus 100 for manufacturing a semiconductor device.
  • the film forming apparatus 100 according to the first embodiment is a film forming apparatus 100 of single-wafer type for an epitaxial film growth.
  • the film forming apparatus 100 includes a reaction chamber 10 (process chamber), a gas supply port 11 , a stage 12 , a heater 14 , a discharging unit 16 , a pressure regulating valve 18 , an exhaust pump 20 , a detoxifying device 22 , a condensing pipe 24 (first pipe), an accelerating pipe 25 (second pipe), a condensing agent supplying pipe 26 (third pipe), a cleaning gas supplying pipe 28 , a temperature adjuster 30 , a heater 32 , a capturing unit 34 (member), a waste liquid tank 36 (waste liquid discharger), and an exhaust pipe 40 .
  • the stage 12 and the heater 14 are provided in the reaction chamber 10 .
  • a wafer W is placed on the stage 12 .
  • the heater 14 heats the wafer W.
  • the gas supply port 11 is provided in an upper portion of the reaction chamber 10 . Source gas is supplied from the gas supply port 11 into the reaction chamber 10 .
  • the reaction chamber 10 is decompressed to a desired pressure at the time of film formation. Exhaust gas including source gas which has not consumed in the reaction chamber 10 and reaction by-products generated by reaction is discharged from the reaction chamber 10 .
  • the condensing pipe 24 is provided between the reaction chamber 10 and the waste liquid tank 36 .
  • the condensing pipe 24 is connected to the reaction chamber 10 .
  • the condensing pipe 24 has the first opening area (or first cross-sectional area) in the cross section in the direction perpendicular to the moving direction of the exhaust gas (white arrow in FIG. 1 ).
  • the moving direction of the exhaust gas in the condensing pipe 24 coincides with the direction of gravity.
  • the exhaust gas discharged from the reaction chamber 10 passes through the condensing pipe 24 .
  • the condensing pipe 24 has a function for condensing and liquefying the condensing agent by bringing the condensing agent supplied from the condensing agent supplying pipe 26 into contact with the exhaust gas.
  • the accelerating pipe 25 is provided between the condensing pipe 24 and the waste liquid tank 36 .
  • the condensing pipe 24 is connected to the accelerating pipe 25 .
  • the accelerating pipe 25 has the second opening area (or second cross-sectional area) in the cross section in the direction perpendicular to the moving direction of the exhaust gas (white arrow in FIG. 1 ).
  • the second opening area is smaller than the first opening area.
  • the second opening area is equal to or larger than 2.5% and equal to or smaller than 20% of the first opening area.
  • the opening area of the accelerating pipe 25 is smaller than that of the condensing pipe 24 , the exhaust gas discharged from the reaction chamber 10 is accelerated in the accelerating pipe 25 .
  • the flow velocity of the exhaust gas in the accelerating pipe 25 is faster than that in the condensing pipe 24 .
  • the capturing unit 34 is provided between the accelerating pipe 25 and the waste liquid tank 36 .
  • the capturing unit 34 has an inclined surface 34 f inclined with respect to the moving direction of the exhaust gas (white arrow in FIG. 1 ).
  • the inclined surface 34 f is inclined toward the waste liquid tank 36 .
  • An inclination angle of the inclined surface 34 f with respect to the moving direction of the exhaust gas is, for example, equal to or more than 20 degrees and equal to or less than 50 degrees.
  • the capturing unit 34 has a function for capturing droplets included in the exhaust gas by causing the exhaust gas to collide with the inclined surface 34 f and flowing the caught droplets into the waste liquid tank 36 .
  • the capturing unit 34 can have a surface perpendicular to the moving direction of the exhaust gas. In this case, it is preferable that the moving direction of the exhaust gas be inclined with respect to the direction of gravity. That is, by disposing the condensing pipe 24 , the accelerating pipe 25 , and the capturing unit 34 while being inclined with respect to the direction of gravity, the droplets caught by the capturing unit 34 can be collected into the waste liquid tank 36 .
  • the structure of the capturing unit 34 can be selected according to a disposing space of each unit in the film forming apparatus 100 .
  • the waste liquid tank 36 is provided between the capturing unit 34 and the exhaust pipe 40 .
  • the waste liquid tank 36 is an example of a waste liquid discharger.
  • the waste liquid tank 36 has a function for storing the droplets caught by the capturing unit 34 .
  • the waste liquid tank 36 stores the waste liquid including a part of the exhaust gas. Specially, solid particles and droplets derived from the discharged exhaust gas are included. By removing the waste liquid stored in the waste liquid tank 36 , the waste liquid including a part of the exhaust gas is discharged from the film forming apparatus 100 .
  • a waste liquid pipe can be provided as a waste liquid discharger.
  • the waste liquid including a part of the exhaust gas is discharged from the film forming apparatus 100 .
  • the exhaust pump 20 is provided between the exhaust pipe 40 and the discharging unit 16 .
  • the exhaust pump 20 decompresses the reaction chamber 10 .
  • the exhaust pump 20 is, for example, a vacuum pump.
  • the pressure regulating valve 18 is provided between the exhaust pipe 40 and the exhaust pump 20 .
  • the pressure regulating valve 18 can regulate the pressure in the reaction chamber 10 to a desired pressure.
  • the detoxifying device 22 is provided between the exhaust pump 20 and the discharging unit 16 .
  • the detoxifying device 22 is, for example, a combustion-type detoxifying device.
  • the detoxifying device 22 detoxifies the exhaust gas discharged from the reaction chamber 10 .
  • the detoxified exhaust gas is discharged from the discharging unit 16 to the outside of the film forming apparatus 100 .
  • the condensing agent supplying pipe 26 is connected to the condensing pipe 24 .
  • the condensing agent supplying pipe 26 supplies a condensing agent having a normal boiling point of equal to or higher than 25° C. to the condensing pipe 24 .
  • the normal boiling point is a boiling point at one atmospheric pressure, that is, at 101325 Pa.
  • the condensing agent has a function for being condensed and liquefied in the condensing pipe 24 as using minute solid particles and droplets included in the exhaust gas discharged from the reaction chamber 10 as nuclei to form the droplets.
  • the condensing agent is, for example, perfluoropolyether (PEPE) and benzene (C 6 H 6 ), which is an organic material.
  • PEPE perfluoropolyether
  • C 6 H 6 benzene
  • a condensing agent for example, hexachlorodisilane (Si 2 Cl 6 ) which is an inorganic material can be used.
  • PEPE perfluoropolyether
  • benzene C 6 H 6
  • hexachlorodisilane Si 2 Cl 6
  • the heater 32 is provided, for example, around the condensing agent supplying pipe 26 .
  • the heater 32 is, for example, a heater using resistance heating.
  • the heater 32 has a function for heating the condensing agent.
  • a liquid condensing agent is vaporized by the heater 32 and supplied to the condensing pipe 24 as gas.
  • the temperature adjuster 30 is provided around the condensing pipe 24 .
  • the temperature adjuster 30 has a function for adjusting the temperature in the condensing pipe 24 .
  • the temperature adjuster 30 has at least one of a cooling function and a heating function.
  • the temperature adjuster 30 is, for example, a heater using resistance heating.
  • the temperature adjuster 30 is, for example, a water cooling pipe.
  • the condensing agent in the condensing pipe 24 is maintained to be supersaturated. Since the inside of the condensing pipe 24 is in a decompressed state of less than one atm, the temperature in the condensing pipe 24 is maintained at a temperature lower than the normal boiling point of the condensing agent.
  • the cleaning gas supplying pipe 28 is connected to the condensing pipe 24 .
  • the cleaning gas supplying pipe 28 supplies cleaning gas to the condensing pipe 24 .
  • the condensing pipe 24 , the accelerating pipe 25 , the exhaust pipe 40 , and the like are cleaned with the cleaning gas when the film formation in the reaction chamber 10 is not performed.
  • the cleaning gas is, for example, chlorine trifluoride (ClF 3 ) gas.
  • the normal boiling point of the cleaning gas is lower than 25° C.
  • the wafer N is loaded in the reaction chamber 10 and is placed on the stage 12 .
  • hydrogen (H 2 ) is flowed from the gas supply port 11 , and the reaction chamber 10 is decompressed by the exhaust pump 20 so as to be in a decompressed state.
  • the pressure regulating valve 18 regulates the pressure in the reaction chamber 10 to a desired pressure.
  • the heater 14 heats the wafer W, for example, to 1000° C.
  • the source gas is supplied from the gas supply port 11 into the reaction chamber 10 , and a silicon epitaxial film is formed on the surface of the wafer W.
  • the source gas is, for example, dichlorosilane (SiH 2 Cl 2 ), hydrogen. (H 2 ), or hydrogen chloride (HCl).
  • gases of chlorosilanes such as trichlorosilane (SiHCl 3 ), tetrachlorosilane (SiCl 4 ) tetrachlorodisilane (Si 2 H 2 Cl 4 ) hexachlorodisilane (Si 2 Cl 6 ) and octachlorotrisilane (Si 3 Cl 8 ) and chlorosilane polymers (SixHyClz: x is equal to or more than two) may be generated as a reaction by-product.
  • chlorosilanes such as trichlorosilane (SiHCl 3 ), tetrachlorosilane (SiCl 4 ) tetrachlorodisilane (Si 2 H 2 Cl 4 ) hexachlorodisilane (Si 2 Cl 6 ) and octachlorotrisilane (Si 3 Cl 8 ) and chlorosilane polymers (S
  • Chlorosilane polymers mean molecular compounds having a main chain in which two or more silicon atoms are bonded and a substituent on the silicon atom is chlorine or hydrogen or a substance in which a plurality of kinds of molecular compounds is mixed.
  • reaction by-product gas and the source gas which has not been used to form the film are included in the gas to be discharged from the reaction chamber 10 .
  • the normal boiling point of dichlorosilane which is the source gas is about 8° C.
  • the normal boiling point of trichlorosilane is about 31° C.
  • the normal boiling point of tetrachlorosilane is about 57° C.
  • the normal boiling point of chlorosilane polymers having a larger molecular weight is higher.
  • the condensing agent is supplied from the condensing agent supplying pipe 26 to the condensing pipe 24 .
  • the condensing agent may be hexachlorodisilane (Si 2 Cl 6 ). Hexachlorodisilane (Si 2 Cl 6 ) is heated by the heater 32 and supplied to the condensing pipe 24 in a vaporized state.
  • the temperature adjuster 30 adjusts the temperature of hexachlorodisilane supplied to the condensing pipe 24 so as to be supersaturated.
  • hexachlorodisilane When the exhaust gas contacts hexachlorodisilane which is maintained to be supersaturated, hexachlorodisilane is liquefied as having the droplets and the solid particles included in the exhaust gas as nuclei, and a large droplet of hexachlorodisilane is formed.
  • the exhaust gas including the hexachlorodisilane droplets is accelerated in the accelerating pipe 25 .
  • the hexachlorodisilane droplets in the exhaust gas are accelerated in the accelerating pipe 25 .
  • the accelerated hexachlorodisilane droplet collides with the inclined surface 34 f of the capturing unit 34 and is attached to the inclined surface 34 f .
  • the hexachlorodisilane droplet attached to the inclined surface 34 f flows along the inclined surface 34 f , and flows into and is stored in the waste liquid tank 36 .
  • the exhaust gas from which hexachlorodisilane droplets have been removed is detoxified by the detoxifying device 22 and is discharged from the discharging unit 16 to the outside of the film forming apparatus 100 .
  • the exhaust gas including the reaction by-product gas and the source gas which has not been used to form a film is discharged from the reaction chamber to the outside of the manufacturing apparatus through the exhaust pipe, the exhaust pump, the detoxifying device, and the like.
  • the exhaust gas As the exhaust gas is discharged from the reaction chamber and passes through the exhaust pipe, the exhaust gas is condensed by being cooled and changed to the droplets, or the exhaust gas is sublimated to be the solid particles. There has been a problem in that the droplets and the solid particles cause clogging of the exhaust pipe and a failure of the exhaust pump.
  • the droplets and the solid particles derived from the exhaust gas include a substance which generates harmful gas and a substance having ignition properties, which may risk the maintenance work. Therefore, it is desired to prevent the clogging of the exhaust pipe and the failure of the exhaust pump caused by the droplets and the solid particles derived from the exhaust gas.
  • the film forming apparatus 100 includes the condensing agent supplying pipe 26 and the condensing pipe 24 in a path between the reaction chamber 10 and the exhaust pipe 40 .
  • the condensing agent may be maintained to be supersaturated in the condensing pipe 24 .
  • the condensing agent By contacting the condensing agent which is maintained to be supersaturated with the exhaust gas, the condensing agent is liquefied as having the droplets and the solid particles generated in the exhaust gas as a nucleus, and a large droplet of the condensing agent is formed.
  • the droplets and the solid particles derived from the exhaust gas are taken in the large droplet of the condensing agent. Accordingly, the droplets and the solid particles derived from the exhaust gas are caught by the capturing unit 34 and stored in the waste liquid tank 36 .
  • the exhaust gas from which the droplets and the solid particles derived from the exhaust gas have been removed flows to the exhaust pipe 40 , the pressure regulating valve 18 , the exhaust pump 20 , and the detoxifying device 22 . Therefore, it is possible to prevent the clogging of the exhaust pipe and the failure of the exhaust pump.
  • the droplets and the solid particles derived from the exhaust gas are taken in the large droplet of the condensing agent. Therefore, even when the droplets and the solid particles derived from the exhaust gas are minute, the droplets and the solid particles can be easily collected.
  • the solid particles which have no fluidity, get fluidity by being taken in the large droplet of the condensing agent. Therefore, it is possible to flow the droplets from the capturing unit 34 into the waste liquid tank 36 and collect the solid particles.
  • the condensing agent needs to be a liquid or solid substance under atmospheric pressure. Therefore, the normal boiling point of the condensing agent is equal to or higher than 25° C. which is standard room temperature.
  • the condensing agent needs to be a substance which is supersaturated by temperature adjustment by the temperature adjuster 30 under the reduced pressure in the condensing pipe 24 .
  • the condensing agent needs to be a substance of which phase transition from gas to liquid occurs by the temperature adjustment by the temperature adjuster 30 under the reduced pressure in the condensing pipe 24 .
  • the normal boiling point of the condensing agent be higher than 100° C.
  • the condensing agent has low reactivity with the droplets and the solid particles derived from the exhaust gas in the exhaust gas.
  • the temperature adjuster 30 heats or cools the condensing agent in the condensing pipe 24 .
  • the condensing agent be heated and supplied to the condensing pipe 24 as gas.
  • the condensing agent can be vaporized in the condensing pipe 24 which is decompressed.
  • the temperature adjuster 30 it is preferable to heat the condensing pipe 24 by the temperature adjuster 30 for the heat of vaporization.
  • the droplets of the condensing agent formed in the condensing pipe 24 are accelerated by providing the accelerating pipe 25 .
  • the accelerating pipe 25 By accelerating the droplets of the condensing agent and colliding the droplets with the capturing unit 34 , it is possible to surely catch the droplets of the condensing agent. Therefore, an efficiency of capturing the droplets and the solid particles derived from the exhaust gas is improved.
  • the second opening area of the accelerating pipe 25 may be equal to or larger than 2.5% and equal to or smaller than 20% of the first opening area of the condensing pipe 24 .
  • the area is smaller than the above range, it is difficult to control the pressure in the reaction chamber 10 .
  • the acceleration of the droplet becomes insufficient, and the efficiency of capturing the droplets decreases.
  • a manufacturing apparatus capable of improving the efficiency of capturing the droplets and the solid particles derived from the exhaust gas and preventing the clogging of the exhaust pipe and the failure of the exhaust pump.
  • a manufacturing apparatus is different from that according to the first embodiment in that the manufacturing apparatus is a batch-type film forming apparatus.
  • the description overlapped with the first embodiment may be partially omitted.
  • FIG. 2 is a schematic diagram of an exemplary manufacturing apparatus according to the second embodiment.
  • the exemplary manufacturing apparatus according to the second embodiment is a film forming apparatus 200 for manufacturing a semiconductor device.
  • the film forming apparatus 200 according to the second embodiment is a batch-type film forming apparatus.
  • the film forming apparatus 200 includes a reaction chamber 10 (process chamber), a gas supply port 11 , a boat 44 , a heater 46 , a discharging unit 16 , a pressure regulating valve 42 , an exhaust pump 20 , a detoxifying device 22 , a condensing pipe 24 (first pipe), an accelerating pipe 25 (second pipe), a condensing agent supplying pipe 26 (third pipe), a temperature adjuster 30 , a heater 32 , a capturing unit 34 (member), a waste liquid tank 36 (waste liquid discharger), and an exhaust pipe 40 .
  • the reaction chamber 10 is made of, for example, transparent quartz glass.
  • the boat 44 is provided in the reaction chamber 10 .
  • the gas supply port 11 is provided in an upper portion of the reaction chamber 10 . Material gas is supplied from the gas supply port 11 into the reaction chamber 10 .
  • the boat 44 can hold a plurality of wafers W.
  • the boat 44 is made of, for example, quartz glass.
  • the heater 46 is provided around the reaction chamber 10 .
  • the heater 46 heats the wafers W placed on the boat 44 .
  • the pressure regulating valve 42 is provided between the reaction chamber 10 and the condensing pipe 24 .
  • the pressure regulating valve 42 can decompress the reaction chamber 10 to a desired pressure.
  • the wafer W is carried into the reaction chamber 10 and held by the boat 44 .
  • the exhaust pump 20 decompresses the reaction chamber 10 .
  • the pressure in the reaction chamber 10 is adjusted to the desired pressure by using the pressure regulating valve 42 .
  • the heater 46 heats the wafer W to a predetermined temperature.
  • the source gas is supplied from the gas supply port 11 into the reaction chamber 10 , and a silicon nitride film is formed on the surface of the wafer W.
  • the source gas is, for example, dichlorosilane (SiH 2 Cl 2 ) and ammonia (NH 3 ).
  • NH 4 Cl is generated as a reaction by-product and included in the exhaust gas discharged from the reaction chamber 10 . Since NH 4 Cl has a high boiling point, NH 4 Cl tends to be sublimated and be solid particles when being cooled.
  • the condensing agent is supplied from the condensing agent supplying pipe 26 to the condensing pipe 24 .
  • the condensing agent may be perfluoropolyether (PEPE).
  • PEPE perfluoropolyether
  • the perfluoropolyether is heated by the heater 32 and supplied to the condensing pipe 24 in a vaporized state.
  • the temperature adjuster 30 adjusts the temperature in the condensing pipe 24 so that perfluoropolyether supplied to the condensing pipe 24 is supersaturated.
  • perfluoropolyether When the exhaust gas contacts perfluoropolyether which is maintained to be supersaturated, perfluoropolyether is liquefied as having the solid particle of NH 4 Cl included in the exhaust gas as a nucleus, and a large droplet of perfluoropolyether is formed.
  • the exhaust gas including the perfluoropolyether droplets is accelerated in the accelerating pipe 25 .
  • the perfluoropolyether droplets in the exhaust gas are accelerated in the accelerating pipe 25 .
  • the accelerated perfluoropolyether droplet collides with an inclined surface 34 f of the capturing unit 34 and is attached to the inclined surface 34 f .
  • the perfluoropolyether droplet attached to the inclined surface 34 f flows along the inclined surface 34 f and flows into and is stored in the waste liquid tank 36 .
  • the exhaust gas from which the perfluoropolyether droplets including the solid particles of NH 4 Cl have been removed is detoxified by the detoxifying device 22 and is discharged from the discharging unit 16 to the outside of the film forming apparatus 200 .
  • the perfluoropolyether droplet is formed as having the solid particle of NH 4 Cl as a nucleus. Since the perfluoropolyether droplets including the solid particles of NH 4 Cl have fluidity, it is possible to flow the droplets from the capturing unit 34 into the waste liquid tank 36 and collect the droplets.
  • the second embodiment it is possible to provide a manufacturing apparatus capable of preventing the clogging of the exhaust pipe and the failure of the exhaust pump as in the first embodiment.
  • a manufacturing apparatus is a manufacturing apparatus for manufacturing a semiconductor device or a liquid crystal device which includes a process chamber discharging exhaust gas; a waste liquid discharger discharging waste liquid including a part of the exhaust gas; a discharging unit discharging a remaining part of the exhaust gas; a first pipe provided between the process chamber and the waste liquid discharger, the first pipe having a first opening area in a cross section in a direction perpendicular to a moving direction of the exhaust gas; a second pipe provided between the first pipe and the waste liquid discharger, the second pipe having a second opening area smaller than the first opening area in a cross section in the direction perpendicular to the moving direction of the exhaust gas; a first pressure regulator provided between the process chamber and the first pipe, the first pressure regulator controlling a pressure in the process chamber; and a second pressure regulator provided between the waste liquid discharger and the discharging unit, the second pressure regulator controlling a pressure in the first pipe.
  • FIG. 3 is a schematic diagram of an exemplary manufacturing apparatus according to the third embodiment.
  • the exemplary manufacturing apparatus according to the third embodiment is a film forming apparatus 300 for manufacturing a semiconductor device.
  • the film forming apparatus 300 according to the third embodiment is a film forming apparatus 300 of single-wafer type for an epitaxial film growth.
  • the film forming apparatus 300 includes a reaction chamber 10 (process chamber), a gas supply port 11 , a stage 12 , a heater 14 , a discharging unit 16 , a first pressure regulating valve 19 (first pressure regulator), a first exhaust pump 21 (first pressure regulator), a detoxifying device 22 , a first exhaust pipe 50 (first pipe), an accelerating pipe 25 (second pipe), a cleaning gas supplying pipe 28 , a cooling unit 52 , a capturing unit 34 (member), a waste liquid tank 36 (waste liquid discharger), a second exhaust pipe 54 , a second pressure regulating valve 56 (second pressure regulator), and a second exhaust pump 58 (second pressure regulator).
  • first pressure regulating valve 19 first pressure regulator
  • first exhaust pump 21 first pressure regulator
  • detoxifying device 22 a first exhaust pipe 50 (first pipe), an accelerating pipe 25 (second pipe), a cleaning gas supplying pipe 28 , a cooling unit 52 , a capturing unit 34 (member), a waste liquid tank 36 (waste liquid discharger),
  • the stage 12 and the heater 14 are provided in the reaction chamber 10 .
  • a wafer W is placed on the stage 12 .
  • the heater 14 heats the wafer W.
  • the gas supply port 11 is provided in an upper portion of the reaction chamber 10 . Source gas is supplied from the gas supply port 11 into the reaction chamber 10 .
  • the reaction chamber 10 is decompressed to a desired pressure at the time of film formation. Exhaust gas including source gas which has not consumed in the reaction chamber 10 and reaction by-products generated by reaction is discharged from the reaction chamber 10 .
  • the first exhaust pump 21 is provided between the reaction chamber 10 and the first exhaust pipe 50 .
  • the first exhaust pump 21 decompresses the reaction chamber 10 .
  • the first exhaust pump 21 is, for example, a vacuum pump.
  • the first pressure regulating valve 19 is provided between the reaction chamber 10 and the first exhaust pump 21 .
  • the first pressure regulating valve 19 can regulate the pressure in the reaction chamber 10 to a desired pressure.
  • the first exhaust pump 21 and the first pressure regulating valve 19 form a first pressure regulator.
  • the first exhaust pipe 50 is provided between the first exhaust pump 21 and the waste liquid tank 36 .
  • the first exhaust pipe 50 is connected to the reaction chamber 10 .
  • the first exhaust pipe 50 has a first opening area in a cross section in the direction perpendicular to a moving direction of the exhaust gas (white arrow in FIG. 3 ).
  • the exhaust gas discharged from the reaction chamber 10 passes through the first exhaust pipe 50 .
  • the accelerating pipe 25 is provided between the first exhaust pipe 50 and the waste liquid tank 36 .
  • the first exhaust pipe 50 is connected to the accelerating pipe 25 .
  • the accelerating pipe 25 has a second opening area in the cross section in the direction perpendicular to the moving direction of the exhaust gas (white arrow in FIG. 3 ).
  • the second opening area is smaller than the first opening area.
  • the second opening area is equal to or larger than 2.5% and equal to or smaller than 20% of the first opening area.
  • the opening area of the accelerating pipe 25 is smaller than that of the first exhaust pipe 50 , the exhaust gas discharged from the reaction chamber 10 is accelerated in the accelerating pipe 25 .
  • the flow velocity of the exhaust gas in the accelerating pipe 25 is faster than that in the first exhaust pipe 50 .
  • the capturing unit 34 is provided between the accelerating pipe 25 and the waste liquid tank 36 .
  • the capturing unit 34 has an inclined surface 34 f inclined with respect to the moving direction of the exhaust gas (white arrow in FIG. 3 ).
  • the inclined surface 34 f is inclined toward the waste liquid tank 36 .
  • An inclination angle of the inclined surface 34 f with respect to the moving direction of the exhaust gas is, for example, equal to or more than 30 degrees and equal to or less than 60 degrees.
  • the capturing unit 34 has a function for capturing the droplets included in the exhaust gas and flowing the caught droplets into the waste liquid tank 36 .
  • the waste liquid tank 36 is provided between the capturing unit 34 and the second exhaust pipe 54 .
  • the waste liquid tank 36 is an example of a waste liquid discharger.
  • the waste liquid tank 36 has a function for storing the droplets caught by the capturing unit 34 .
  • the waste liquid tank 36 stores the waste liquid including a part of the exhaust gas. Specifically, solid particles and minute droplets derived from the discharged exhaust gas are included. By removing the waste liquid stored in the waste liquid tank 36 , the waste liquid including a part of the exhaust gas is discharged from the film forming apparatus 300 .
  • a waste liquid pipe can be provided as a waste liquid discharger.
  • the waste liquid including a part of the exhaust gas is discharged from the film forming apparatus 300 .
  • the second exhaust pump 58 is provided between the second exhaust pipe 54 and the discharging unit 16 .
  • the second exhaust pump 58 decompresses the first exhaust pipe 50 .
  • the second exhaust pump 58 is, for example, a vacuum pump.
  • the second pressure regulating valve 56 is provided between the second exhaust pipe 54 and the second exhaust pump 58 .
  • the second pressure regulating valve 56 can regulate the pressure in the first exhaust pipe 50 to a desired pressure.
  • the second pressure regulating valve 56 regulates the pressure in the first exhaust pipe 50 to be higher than that in the reaction chamber 10 .
  • the second exhaust pump 58 and the second pressure regulating valve 56 form a second pressure regulator.
  • the second pressure regulator provided between the waste liquid tank 36 and the discharging unit 16 .
  • the detoxifying device 22 is provided between the second exhaust pump 58 and the discharging unit 16 .
  • the detoxifying device 22 is, for example, a combustion-type detoxifying device.
  • the detoxifying device 22 detoxifies the exhaust gas discharged from the reaction chamber 10 .
  • the detoxified exhaust gas is discharged from the discharging unit 16 to the outside of the film forming apparatus 300 .
  • the cooling unit 52 is provided around the first exhaust pipe 50 .
  • the cooling unit 52 is, for example, a water cooling pipe.
  • the cooling unit 52 has a function for cooling the exhaust gas in the first exhaust pipe 50 .
  • the cleaning gas supplying pipe 28 is connected to the first exhaust pipe 50 .
  • the cleaning gas supplying pipe 28 supplies cleaning gas to the first exhaust pipe 50 .
  • the first exhaust pipe 50 , the accelerating pipe 25 , the second exhaust pipe 54 , and the like are cleaned with the cleaning gas when the film formation in the reaction chamber 10 is not performed.
  • the cleaning gas is, for example, chlorine trifluoride (ClF 3 ) gas.
  • the wafer W is loaded in the reaction chamber 10 and is placed on the stage 12 .
  • hydrogen (H 2 ) is flowed from the gas supply port 11 , and the reaction chamber 10 is decompressed by the first exhaust pump 21 so as to be in a decompressed state.
  • the first pressure regulating valve 19 regulates the pressure in the reaction chamber 10 to a desired pressure.
  • the pressure in the reaction chamber 10 is, for example, 10 kPa.
  • the second exhaust pump 58 decompresses the first exhaust pipe 50 .
  • the second pressure regulating valve 56 regulates the pressure in the first exhaust pipe 50 to a desired pressure.
  • the pressure in the first exhaust pipe 50 is made higher than the pressure in the reaction chamber 10 .
  • the pressure in the first exhaust pipe 50 is, for example, 40 kPa.
  • the heater 14 heats the wafer W, for example, to 1000° C.
  • the source gas is supplied from the gas supply port 11 into the reaction chamber 10 , and a silicon epitaxial film is formed on the surface of the wafer. W.
  • the source gas is, for example, dichlorosilane (SiH 2 Cl 2 ), hydrogen (H 2 ), or hydrogen chloride (HCl).
  • gases of chlorosilanes such as trichlorosilane (SiHCl 2 ), tetrachlorosilane (SiCl 4 ), tetrachlorodisilane (Si 2 H 2 Cl 4 ), hexachlorodisilane (Si 2 Cl 6 ), and octachlorotrisilane (Si 3 Cl 8 ) and chlorosilane polymers (SixHyClz: x is equal to or more than two) are generated as a reaction by-product.
  • Chlorosilane polymers mean molecular compounds having a main chain in which two or more silicon atoms are bonded and a substituent on the silicon atom is chlorine or hydrogen or a substance in which a plurality of kinds of the molecular compounds is mixed.
  • reaction by-product gas and the source gas which has not been used to form the film are included in the gas to be discharged from the reaction chamber 10 .
  • the normal boiling point of dichlorosilane which is the source gas is about 8° C.
  • the normal boiling point of trichlorosilane is about 31° C.
  • the normal boiling point of tetrachlorosilane is about 57° C.
  • the normal boiling point of chlorosilane polymers having a larger molecular weight is higher.
  • the normal boiling point is a boiling point at one atmospheric pressure, that is, at 101325 Pa.
  • the pressure of the exhaust gas is increased. Furthermore, the exhaust gas is cooled by the cooling unit 52 . Therefore, first, the gas of chlorosilane polymers having a high boiling point is condensed and liquefied, and forms droplets. As the exhaust gas is further cooled, the gas of chlorosilane polymers having the lower boiling point and the gas of chlorosilanes are condensed and liquefied, and form the droplets.
  • the exhaust gas including the droplets derived from the exhaust gas is accelerated in the accelerating pipe 25 .
  • the droplets derived from the exhaust gas in the exhaust gas are accelerated in the accelerating pipe 25 .
  • the accelerated droplet collides with the inclined surface 34 f of the capturing unit 34 and is attached to the inclined surface 34 f .
  • the droplet attached to the inclined surface 34 f flows along the inclined surface 34 f and flows into and is stored in the waste liquid tank 36 .
  • the exhaust gas from which droplets derived from the exhaust gas have been removed is detoxified by the detoxifying device 22 and is discharged from the discharging unit 16 to the outside of the film forming apparatus 300 .
  • the exhaust gas including the reaction by-product gas and the source gas which has not been used to form a film is discharged from the reaction chamber to the outside of the manufacturing apparatus through the exhaust pipe, the exhaust pump, the detoxifying device, and the like.
  • the exhaust gas As the exhaust gas is discharged from the reaction chamber and passes through the exhaust pipe, the exhaust gas is condensed by being cooled and changed to the droplets, and is sublimated to be the solid particles. There has been a problem in that the droplets and the solid particles cause clogging of the exhaust pipe and a failure of the exhaust pump.
  • the droplets and the solid particles derived from the exhaust gas include a substance which generates harmful gas and a substance having ignition properties, which may risk the maintenance work. Therefore, it is desired to prevent the clogging of the exhaust pipe and the failure of the exhaust pump due to the droplets and the solid particles derived from the exhaust gas.
  • the film forming apparatus 300 includes the first pressure regulator including the first exhaust pump 21 and the first pressure regulating valve 19 and the second pressure regulator including the second exhaust pump 58 and the second pressure regulating valve 56 .
  • the pressure in the first exhaust pipe 50 can be made higher than the pressure in the reaction chamber 10 . Therefore, the source gas and the reaction by-product gas having a boiling point lower than that in a case where the pressure in the first exhaust pipe 50 is equal to the pressure in the reaction chamber 10 can be liquefied.
  • the size of the droplet generated by liquefying the source gas and the reaction by-product gas can be larger than that in a case where the pressure in the first exhaust pipe 50 is equal to the pressure in the reaction chamber 10 .
  • the droplet is caught by colliding with the inclined surface 34 f of the capturing unit 34 .
  • the caught droplet is discharged to the outside of the film forming apparatus 300 by being stored in the waste liquid tank 36 .
  • a capturing efficiency by the capturing unit 34 is improved.
  • the droplets formed in the first exhaust pipe 50 are accelerated by providing the accelerating pipe 25 .
  • the accelerating pipe 25 By accelerating the droplets and colliding the droplets with the capturing unit 34 , it is possible to catch the droplets. Therefore, the efficiency of capturing the droplets derived from the exhaust gas is improved.
  • the second opening area of the accelerating pipe 25 is equal to or larger than 2.5% and equal to or smaller than 20% of the first opening area of the first exhaust pipe 50 .
  • the area is smaller than the above range, it is difficult to control the pressure in the reaction chamber 10 .
  • the acceleration of the droplet becomes insufficient, and the efficiency of capturing the droplets decreases.
  • the source gas and the reaction by-product gas having a lower boiling point can be liquefied. It is possible to further increase the size of the droplet to be generated by liquefying the source gas and the reaction by-product gas. Therefore, the efficiency of capturing the droplets is further improved.
  • a manufacturing apparatus capable of improving the efficiency of capturing the droplets derived from the exhaust gas and preventing the clogging of the exhaust pipe and the failure of the exhaust pump.
  • An exhaust gas treatment apparatus includes a spray tower having a first opening area in a cross section in a direction perpendicular to a moving direction of exhaust gas; a spray nozzle provided in the spray tower, the spray nozzle spraying liquid; a waste liquid discharger storing waste liquid including a part of the exhaust gas; and a restrictor provided between the spray nozzle and the waste liquid discharger, the restrictor having a second opening area smaller than the first opening area.
  • FIG. 4 is a schematic diagram of an exemplary exhaust gas treatment apparatus according to the fourth embodiment. An example is illustrated in which an exhaust gas treatment apparatus 70 according to the fourth embodiment is applied to a film forming apparatus 400 for manufacturing a semiconductor device.
  • the film forming apparatus 400 is a film forming apparatus 400 of single-wafer type for an epitaxial film growth.
  • the film forming apparatus 400 includes a reaction chamber 10 (process chamber), a gas supply port 11 , a stage 12 , a heater 14 , a discharging unit 16 , a pressure regulating valve 18 , an exhaust pump 20 , a detoxifying device 22 , the exhaust gas treatment apparatus 70 , and an exhaust pipe 62 .
  • the exhaust gas treatment apparatus 70 includes an exhaust gas introducing unit 71 , a spray tower 72 , an exhaust gas lead-out unit 73 , a spray nozzle 74 , a restrictor 76 , a capturing plate 78 (member), a circulation liquid tank 80 (waste liquid discharger), a circulating pump 82 , and an exhaust fan 84 .
  • the stage 12 and the heater 14 are provided in the reaction chamber 10 .
  • a wafer W is placed on the stage 12 .
  • the heater 14 heats the wafer W.
  • the gas supply port 11 is provided in an upper portion of the reaction chamber 10 . Source gas is supplied from the gas supply port 11 into the reaction chamber 10 .
  • the reaction chamber 10 is decompressed to a desired pressure at the time of film formation. Exhaust gas including source gas which has not consumed in the reaction chamber 10 and reaction by-products generated by reaction is discharged from the reaction chamber 10 to the exhaust pipe 62 .
  • the exhaust pump 20 is provided between the exhaust pipe 62 and the discharging unit 16 .
  • the exhaust pump 20 decompresses the reaction chamber 10 .
  • the exhaust pump 20 is, for example, a vacuum pump.
  • the pressure regulating valve 18 is provided between the exhaust pipe 40 and the exhaust pump 20 .
  • the pressure regulating valve 18 can regulate the pressure in the reaction chamber 10 to a desired pressure.
  • the detoxifying device 22 is provided between the exhaust pump 20 and the discharging unit 16 .
  • the detoxifying device 22 is, for example, a combustion-type detoxifying device.
  • the detoxifying device 22 detoxifies the exhaust gas discharged from the reaction chamber 10 .
  • the exhaust gas treatment apparatus 70 is provided between the detoxifying device 22 and the discharging unit 16 .
  • the exhaust gas treatment apparatus 70 is a wet scrubber.
  • the exhaust gas treatment apparatus 70 has a function for removing solid particles and acid gas included in the exhaust gas.
  • the exhaust gas is introduced from the exhaust gas introducing unit 71 into the spray tower 72 , and the exhaust gas processed by the exhaust gas treatment apparatus 70 is led out from the exhaust gas lead-out unit 73 .
  • the spray tower 72 has, for example, a cylindrical shape.
  • the spray tower 72 has the first opening area (or first cross-sectional area) in a cross section in the direction perpendicular to the moving direction of the exhaust gas (white arrow in FIG.
  • the spray nozzle 74 ejects liquid 74 a in a mist form into the spray tower 72 .
  • the liquid is, for example, water.
  • the acidic gas in the exhaust gas is dissolved in the liquid 74 a .
  • vapor (water vapor) of the liquid 74 a is condensed as using the solid particle as a nucleus, and the solid particles are taken in the liquid 74 a.
  • FIG. 5 is a schematic diagram of an example of the restrictor 76 and the capturing plate 78 according to the fourth embodiment.
  • the restrictor 76 has a plurality of openings 76 a and side walls 76 b respectively surrounding the openings 76 a .
  • the restrictor 76 has the second opening area (or second cross-sectional area) in the cross section in the direction perpendicular to the moving direction of the exhaust gas (white arrows in FIGS. 4 and 5 ).
  • the second opening area is the total sum of the opening areas of the openings 76 a.
  • the second opening area is smaller than the first opening area.
  • the second opening area is equal to or larger than 2.5% and equal to or smaller than 20% of the first opening area.
  • the side wall 76 b has an inclined surface inclined with respect to the moving direction of the exhaust gas (white arrows in FIGS. 4 and 5 ).
  • the side wall 76 b has forward tapered inclination toward the opening 76 a . Since the side wall 76 b has the forward tapered inclination, the liquid 74 a attached to the side wall 76 b flows down toward the opening 76 a.
  • the restrictor 76 has a function for accelerating the flow of the exhaust gas in the spray tower 72 .
  • the number of openings 76 a provided in the restrictor 76 is nine in FIG. 5 .
  • the number is not limited to nine.
  • the number of openings 76 a may be one.
  • the capturing plate 78 is provided between the restrictor 76 and the circulation liquid tank 80 .
  • the capturing plate 78 has inclined surfaces 78 a facing to the moving direction of the exhaust gas (white arrows in FIGS. 4 and 5 ).
  • An angle between the inclined surface 78 a and the moving direction of the exhaust gas is, for example, equal to or more than 10 degrees and equal to or less than 80 degrees.
  • the capturing plate 78 has a function for capturing the solid particles included in the exhaust gas.
  • the solid particles in the exhaust gas accelerated by the restrictor 76 are caught by colliding with the capturing plate 78 .
  • the solid particles caught by the capturing plate 78 flow down along the inclined surface 78 a together with the liquid 74 a enclosing the solid particles or the liquid 74 a attached to the inclined surface 78 a and are stored in the circulation liquid tank 80 .
  • the liquid 74 a stored in the circulation liquid tank 80 is circulated by the circulating pump 82 .
  • the circulated liquid 74 a is ejected from the spray nozzle 74 into the spray tower 72 .
  • the exhaust fan 84 has a function for discharging the exhaust gas processed by the exhaust gas treatment apparatus 70 from the exhaust gas lead-out unit 73 . Furthermore, the exhaust fan 84 decompresses the spray tower 72 .
  • the exhaust gas including the reaction by-product gas and the source gas which has not been used to form a film is discharged from the reaction chamber to the outside of the manufacturing apparatus through the exhaust pipe, the exhaust pump, the detoxifying device, and the like.
  • the exhaust gas As the exhaust gas is discharged from the reaction chamber and passes through the exhaust pipe, the exhaust gas is condensed by being cooled and changed to the droplets, and is sublimated to be the solid particles. There has been a problem in that the droplets and the solid particles cause clogging of the exhaust pipe and a failure of the exhaust pump.
  • the droplets and the solid particles derived from the exhaust gas include a substance which generates harmful gas and a substance having ignition properties, which may risk the maintenance work. Therefore, it is desired to prevent the clogging of the exhaust pipe and the failure of the exhaust pump due to the droplets and the solid particles derived from the exhaust gas.
  • the restrictor 76 and the capturing plate 78 are provided in the spray tower 72 .
  • an efficiency of capturing the solid particles is improved.
  • the exhaust gas treatment apparatus 70 does not include the restrictor 76 and the capturing plate 78 , small solid particles may be discharged outside the exhaust gas treatment apparatus on the flow of the exhaust gas.
  • the small solid particles can be caught. Therefore, it is desired to prevent the clogging of the exhaust pipe and the failure of the exhaust pump due to the droplets and the solid particles derived from the exhaust gas.
  • a silicon-based gas for example, dichlorosilane (SiH 2 Cl 2 ) is used as source gas.
  • the silicon-based gas included in the exhaust gas is burned in the combustion-type detoxifying device 22 and silicon oxide is generated to detoxify the silicon-based gas.
  • a boiling point of silicon oxide is high, and silicon oxide is attached to the exhaust pipe on the downstream side of the detoxifying device 22 and the like as a solid product. This causes a problem.
  • the exhaust gas treatment apparatus 70 for example, it is possible to efficiently remove solid particles of silicon oxide generated in the detoxifying device 22 .
  • an inclination angle of the inclined surface 78 a of the capturing plate 78 with respect to the moving direction of the exhaust gas is preferably equal to or more than 10 degrees and equal to or less than 80 degrees, and more preferably, equal to or more than 30 degrees and equal to or less than 60 degrees.
  • the inclination angle of the inclined surface 78 a of the capturing plate 78 with respect to the moving direction of the exhaust gas can be set to 90 degrees, that is, perpendicular to the moving direction of the exhaust gas so as to catch the solid particles.
  • the second opening area of the restrictor 76 is preferably equal to or larger than 2.5% and equal to or smaller than 20% of the first opening area of the spray tower 72 .
  • the area is smaller than the above range, there is a possibility that the flow of the exhaust gas stops at the opening 76 a of the restrictor 76 .
  • the area exceeds the above range, the solid particles are not sufficiently accelerated, and there is a possibility that the efficiency of capturing the solid particles is not improved.
  • the exhaust gas treatment apparatus 70 by decompressing the spray tower 72 of the exhaust gas treatment apparatus 70 by the exhaust fan 84 , the speeds of the exhaust gas and the solid particles in the exhaust gas can be increased. By increasing the speed of the solid particles, the efficiency of capturing the solid particles in the exhaust gas can be further improved.
  • an exhaust gas treatment apparatus capable of efficiently removing the solid particles and preventing the clogging of the exhaust pipe and the failure of the exhaust pump.
  • a fifth embodiment is different from the fourth embodiment in that the exhaust gas treatment apparatus is applied to a dry etching apparatus.
  • the description overlapped with the fourth embodiment may be partially omitted.
  • FIG. 6 is a schematic diagram of an exemplary exhaust gas treatment apparatus according to the fifth embodiment. An example is illustrated in which an exhaust gas treatment apparatus 70 according to the fifth embodiment is applied to an etching apparatus 500 for manufacturing a semiconductor device.
  • the etching apparatus 500 is an inductive coupled reactive ion etching apparatus.
  • the etching apparatus 500 includes a dielectric chamber 90 (process chamber), a gas supply port 91 , a stage 92 , a discharging unit 16 , a pressure regulating valve 18 , an exhaust pump 20 , a detoxifying device 22 , an exhaust gas treatment apparatus 70 , and an exhaust pipe 62 .
  • the exhaust gas treatment apparatus 70 includes an exhaust gas introducing unit 71 , a spray tower 72 , an exhaust gas lead-out unit 73 , a spray nozzle 74 , a restrictor 76 , a capturing plate 78 (member), a circulation liquid tank 80 (waste liquid discharger), a circulating pump 82 , and an exhaust fan 84 .
  • the stage 92 is provided in the dielectric chamber 90 .
  • a wafer W is placed on the stage 92 .
  • Etching gas is introduced from the gas supply port 91 in an upper portion of the dielectric chamber 90 to ionize the etching gas.
  • the ionization of the etching gas is performed by an inductive coupling method in which high-frequency power is supplied to a dielectric coil (not shown).
  • the ionized reactive gas is fed onto the wafer W, and the film on the surface of the wafer. W is etched.
  • the inside of the dielectric chamber 90 is decompressed to a desired pressure at the time of the etching. From the dielectric chamber 90 , exhaust gas including the etching gas which has not been consumed in the dielectric chamber 90 and reaction by-products generated by the reaction is discharged to the exhaust pipe 62 .
  • the exhaust pump 20 is provided between the exhaust pipe 62 and the discharging unit 16 .
  • the exhaust pump 20 decompresses the reaction chamber 10 .
  • the exhaust pump 20 is, for example, a vacuum pump.
  • the pressure regulating valve 18 is provided between the exhaust pipe 62 and the exhaust pump 20 .
  • the pressure regulating valve 18 can regulate the pressure in the dielectric chamber 90 to a desired pressure.
  • the exhaust gas treatment apparatus 70 is provided between the exhaust pump 20 and the discharging unit 16 .
  • the exhaust gas treatment apparatus 70 is a wet scrubber.
  • the exhaust gas treatment apparatus 70 has a function for removing solid particles included in the exhaust gas and acid gas.
  • the detoxifying device 22 is provided between the exhaust gas treatment apparatus 70 and the discharging unit 16 .
  • the detoxifying device 22 is, for example, a combustion-type detoxifying device.
  • the detoxifying device 22 detoxifies the exhaust gas discharged from the dielectric chamber 90 .
  • the exhaust fan 84 has a function for discharging the exhaust gas processed by the exhaust gas treatment apparatus 70 from the exhaust gas introducing unit 71 . Furthermore, the exhaust fan 84 decompresses the spray tower 72 .
  • the Bosch process method is applied in some cases.
  • the Bosch process method is a method of alternately repeating a dry etching process using a sulfur fluoride gas such as SF 6 and a forming process (passivation process) of a side wall protective film using a fluorocarbon gas such as CHF 3 and C 4 F 8 .
  • Etching with high anisotropy can be realized by the Bosch process method.
  • the restrictor 76 and the capturing plate 78 are provided in the spray tower 72 .
  • an efficiency of capturing the solid particles is improved. Therefore, for example, the efficiency of capturing the solid particles generated by the Bosch process method is improved.
  • an exhaust gas treatment apparatus capable of efficiently removing the solid particles and preventing the clogging of the exhaust pipe and the failure of the exhaust pump.
  • the manufacturing apparatus for manufacturing the semiconductor device has been described as an example.
  • the present disclosure can be applied to a manufacturing apparatus for manufacturing a liquid crystal device.

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FR3114329A1 (fr) * 2020-09-24 2022-03-25 Safran Ceramics Procédé de traitement d’une phase gazeuse résiduelle issue d’une technique CVI
CN114588762A (zh) * 2020-12-03 2022-06-07 中国科学院微电子研究所 半导体加工设备排气装置及方法
US20220288516A1 (en) * 2021-03-09 2022-09-15 Jeffrey R. Mitchell Scent presentation system and method of use
WO2023031819A1 (en) * 2021-09-02 2023-03-09 Edwards Vacuum Llc In line water scrubber system for semiconductor processing
TWI853471B (zh) * 2023-03-01 2024-08-21 南韓商等離子科學系統股份有限公司 半導體工程廢氣處理裝置

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JP7293178B2 (ja) * 2020-09-17 2023-06-19 株式会社東芝 成膜装置

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JP4174396B2 (ja) * 2003-09-19 2008-10-29 カンケンテクノ株式会社 排ガス導入構造および該構造を用いた排ガス処理装置
JP2005259932A (ja) * 2004-03-11 2005-09-22 Hitachi Kokusai Electric Inc 半導体製造装置
WO2009029904A1 (en) * 2007-08-31 2009-03-05 Applied Materials, Inc. Methods and apparatus for abating electronic device manufacturing tool effluent
JP5454152B2 (ja) * 2010-01-08 2014-03-26 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造装置
JP6371738B2 (ja) * 2015-05-28 2018-08-08 株式会社東芝 成膜装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3114329A1 (fr) * 2020-09-24 2022-03-25 Safran Ceramics Procédé de traitement d’une phase gazeuse résiduelle issue d’une technique CVI
CN114588762A (zh) * 2020-12-03 2022-06-07 中国科学院微电子研究所 半导体加工设备排气装置及方法
US20220288516A1 (en) * 2021-03-09 2022-09-15 Jeffrey R. Mitchell Scent presentation system and method of use
US11845029B2 (en) * 2021-03-09 2023-12-19 Jeffrey R. Mitchell Scent presentation system and method of use
WO2023031819A1 (en) * 2021-09-02 2023-03-09 Edwards Vacuum Llc In line water scrubber system for semiconductor processing
TWI853471B (zh) * 2023-03-01 2024-08-21 南韓商等離子科學系統股份有限公司 半導體工程廢氣處理裝置

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