US20180319108A1 - Methods of fabricating electronic and mechanical structures - Google Patents

Methods of fabricating electronic and mechanical structures Download PDF

Info

Publication number
US20180319108A1
US20180319108A1 US16/002,025 US201816002025A US2018319108A1 US 20180319108 A1 US20180319108 A1 US 20180319108A1 US 201816002025 A US201816002025 A US 201816002025A US 2018319108 A1 US2018319108 A1 US 2018319108A1
Authority
US
United States
Prior art keywords
dielectric
metal
materials
deposited
dielectric material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US16/002,025
Inventor
David W. Sherrer
Dara L. Cardwell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cubic Corp
Original Assignee
Nuvotronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvotronics Inc filed Critical Nuvotronics Inc
Priority to US16/002,025 priority Critical patent/US20180319108A1/en
Assigned to NUVOTRONICS, INC reassignment NUVOTRONICS, INC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHERRER, DAVID W
Assigned to NUVOTRONICS, INC reassignment NUVOTRONICS, INC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CARDWELL, DARA
Publication of US20180319108A1 publication Critical patent/US20180319108A1/en
Assigned to CUBIC CORPORATION reassignment CUBIC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NUVOTRONICS, INC.
Assigned to CUBIC CORPORATION reassignment CUBIC CORPORATION CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE INSIDE THE ASSIGNMENT DOCUMENTATION PREVIOUSLY RECORDED AT REEL: 048698 FRAME: 0301. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Assignors: NUVOTRONICS, INC.
Abandoned legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C70/00Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts
    • B29C70/88Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts characterised primarily by possessing specific properties, e.g. electrically conductive or locally reinforced
    • B29C70/882Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts characterised primarily by possessing specific properties, e.g. electrically conductive or locally reinforced partly or totally electrically conductive, e.g. for EMI shielding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C67/00Shaping techniques not covered by groups B29C39/00 - B29C65/00, B29C70/00 or B29C73/00
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22DCASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D19/00Casting in, on, or around objects which form part of the product
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C64/00Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C64/00Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
    • B29C64/10Processes of additive manufacturing
    • B29C64/106Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B33ADDITIVE MANUFACTURING TECHNOLOGY
    • B33YADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y80/00Products made by additive manufacturing
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H01P11/001Manufacturing waveguides or transmission lines of the waveguide type
    • H01P11/005Manufacturing coaxial lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00Waveguides; Transmission lines of the waveguide type
    • H01P3/02Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/06Coaxial lines
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0274Optical details, e.g. printed circuits comprising integral optical means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0284Details of three-dimensional rigid printed circuit boards
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0183Dielectric layers
    • H05K2201/0191Dielectric layers wherein the thickness of the dielectric plays an important role
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0183Dielectric layers
    • H05K2201/0195Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0364Conductor shape
    • H05K2201/037Hollow conductors, i.e. conductors partially or completely surrounding a void, e.g. hollow waveguides
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1275Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by other printing techniques, e.g. letterpress printing, intaglio printing, lithographic printing, offset printing
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4664Adding a circuit layer by thick film methods, e.g. printing techniques or by other techniques for making conductive patterns by using pastes, inks or powders

Definitions

  • the present invention relates to the fabrication of electronic and/or mechanical structures and components and devices such as those used in the electronics industry.
  • the present invention relates to using homogeneous or heterogeneous materials in three dimensional fabrication of electronic and/or mechanical structures and components and devices.
  • the present invention relates to selective metallization processes including electroless and/or electrolytic metallization.
  • consumer electronics are affordable when making millions of complex integrated circuits that are nearly identical.
  • metal can be plated into the exposed areas of the photoresist followed by removal of the photoresist and flash etching to leave behind a metallic pattern. Thicknesses of the patterns are limited to the thickness of the original metallic layer, in the case of etching, and the thickness of the photoresist, in the case of metallic plating.
  • PID photoimageable dielectrics
  • a temporary photoresist may be metallized or the resist may serve as a mold for the metallization; this is followed by removal of the resist leaving behind a metal structure with air as the dielectric.
  • many structures require more than one layer of dielectric material and/or conductive materials such as, for example, metal.
  • conductive materials such as, for example, metal.
  • PIDs to create such devices is very limiting.
  • a second layer uniformly applied from either a liquid or a dry film, has difficulty planarizing or filling the spaces in the structure particularly if they are on the scale of the layer's thickness or greater.
  • a further limitation is the inability to create structures of varying and specific desired thicknesses since the PID can only be applied as one uniform thickness when applied by these methods.
  • Still a further limitation is the inability of the PID to allow for selective metallization. Adhesion promotion and catalyzation of the PID surfaces is non-selective so that every exposed surface will be metallized, rather than a select set of surfaces.
  • a still further limitation of the current techniques is the inability to create structures that differ substantially in size, functionality, and accuracy and also can provide the needed material diversity wherein the materials have both acceptable properties in comparison to other forming techniques currently known—for example finding a process that can provide the properties of metals, dielectrics, and some polymer materials that can be achieved through means such as thin film deposition, plating, sintering, and so on.
  • the materials available in the 3D printing processes themselves often have compromised material properties compared to the material available in bulk or through other forming methods. This is particularly true when attempting to create multicomponent structures in the 3D printing process.
  • the properties of a 3D printed conductor or metallization may have unacceptably low electrical or thermal conductivity compared to a vacuum deposited or plated counterpart.
  • properties such as the dielectric constants, dielectric losses, and density may be unacceptably compromised.
  • it may prove unacceptably challenging to obtain a suitable diversity of desirable materials, having a large enough set of desirable material properties, to create many functional devices that would be desired, for example, that which would desirably be associated with creating a 3D printed and fully functional version of many components populating an electronic and/or mechanical device. For instance, to create a circuit board, both a good electrical conductor and a good non conductor are required in a pattern.
  • the present application for patent discloses and claims a method of fabricating three dimensional electronic and/or mechanical structures by selectively depositing at least one dielectric material, which comprises a metallizable composition, using three dimensional printing methods and selectively depositing metal onto the metallizable dielectric material.
  • the deposited dielectric material which comprises a metallization composition, may further be made from a photoimageable composition and/or patterned using lithographic processes such as, for example, contact printing, projection printing, direct write printing, and/or other lithographic processes.
  • the present application for patent discloses and claims a method of fabricating three dimensional electronic and/or mechanical structures by selectively depositing at least one dielectric material, which comprises a metallization composition, using three dimensional printing methods and depositing at least one dielectric material which does not comprise a metallization composition and selectively depositing a metal onto the metallizable dielectric material.
  • the present application for patent discloses and claims a method of fabricating three dimensional electronic and/or mechanical structures as in either of the previous two embodiments but further comprising depositing a sacrificial material comprising a metallizable composition, selectively metallizing the sacrificial material and removing the sacrificial material.
  • the sacrificial material may be comprised of a photoimageable material that can be lithographically imaged using lithographic processes such as, for example, contact printing, projection printing, direct write printing, and/or other lithographic processes.
  • the removal of the sacrificial material may be performed by organic solvents, aqueous solvents and/or thermal vaporization and optionally may include mechanical assistance such as, for example, ultrasonification.
  • the present application for patent discloses and claims a method of fabricating three dimensional electronic and/or mechanical structures by selectively depositing one dielectric material using three dimensional printing methods, selectively depositing a second dielectric material using three dimensional printing methods, selectively catalyzing one of the dielectric materials with a plating catalyst and selectively depositing metal onto the catalyzed dielectric materials.
  • Either, or both, of the dielectric materials may be photoimageable and can be imaged using lithographic processes such as, for example, contact printing, projection printing, direct write printing, and/or other lithographic processes.
  • the present application for patent discloses and claims a method of fabricating three dimensional electronic and/or mechanical structures of the immediately above embodiment, but further comprising depositing a sacrificial material comprising a metallizable composition, selectively metallizing the sacrificial material, and removing the sacrificial material.
  • the sacrificial material may be comprised of a photoimageable material and can be imaged using lithographic processes such as, for example, contact printing, projection printing, direct write printing, and/or other lithographic processes.
  • the removal of the sacrificial material may be performed by organic solvents, aqueous solvents and/or thermal vaporization and optionally may include mechanical assistance such as, for example, ultrasonification.
  • all of the above embodiments are deposited in a selected plurality of layers to give a sequential build of electronic and/or mechanical structures, wherein the layers comprise one or more of a metal material, a sacrificial material, and a dielectric material thereby forming a structure above the substrate.
  • the three dimensional printing methods can be, for example, stereolithography, 2-photon stereolithography, inkjet, hot melt extrusion fabrication, and/or selective laser sintering.
  • All of these embodiments and their variants may have in common the use of a dielectric that is selectively metallizable in conjunction and relation with a second dielectric to form mixed metal-dielectric structures and metal-dielectric-void structures.
  • FIGS. 1A-1G schematically illustrate exemplary processes, devices, and materials in accordance with the present invention exemplified by ink jet printing or other material dispenser as but one illustrative example of 3D-printing processes of the present invention
  • FIG. 1A schematically illustrates two different printing heads 10 , 11 printing two different materials 12 , 13 to provide first and second structures 14 , 15 on a substrate 16 ;
  • FIG. 1B schematically illustrates the case where a metal 17 is further selectively deposited onto the second structure 15 of FIG. 1A ;
  • FIG. 1C schematically illustrates inkjet printing of a second structure 25 in a manner similar to that of FIG. 1A but onto a metal layer 20 rather than directly onto the substrate;
  • FIG. 1D schematically illustrates the case where a metal 22 is further deposited onto the second structure 25 of FIG. 1C ;
  • FIG. 1E schematically illustrates the case where the inkjet deposited material of the second structure 25 of FIG. 1D has been removed to leave a standalone metal structure 28 ;
  • FIGS. 1F and 1G schematically illustrate a method and resulting structure similar to that of FIGS. 1C-1D but having a sacrificial material 18 disposed on the second structure 25 preventing metallization at the location of the sacrificial material to provide a release hole to assist in the removal of the second structure 25 after metallization;
  • FIG. 2 schematically illustrates using hot melt extrusion fabrication as an illustrative example of 3D-printing processes, devices, and materials of the present invention, wherein a printing head 30 deposits material 33 onto substrate 35 ;
  • FIG. 3 schematically illustrates an exemplary process of stereolithography as an illustrative example of 3D-printing processes, devices, and materials of the present invention, in which a substrate 30 is placed in a bath 32 containing a liquid monomer 34 and an exposure device 36 exposes the monomer to curing radiation 38 to give cured structures 40 which steps may be repeated many times to create a 3D structure;
  • FIGS. 4-16 schematically illustrate cross-sectional views of an exemplary 3D printing process and structure in accordance with the present invention for the fabrication of a three dimensional, multilayered, coaxial cable;
  • FIGS. 17-29B schematically illustrate cross-sectional views of an exemplary 3D printing process and structure in accordance with the present invention for the fabrication of a three dimensional, multilayered, coaxial cable
  • FIG. 30 schematically illustrates an alternative support structure for use in the structure of FIG. 16 .
  • the present invention relates to processes and devices created, at least in part, utilizing three dimensional (3D) additive build manufacturing as a way to create 3D objects by going from a computer or digital design of the 3D object to the object itself from this digital information.
  • the present invention relates to simple and complex electronic and/or mechanical structures and processes for their formation.
  • the present invention relates to devices having conductive structures with tolerances and accuracy on the micron scale, such as microwave and waveguide circuits.
  • the present invention provides novel methods for creating such conductive structures via 3D additive build manufacturing while overcoming present difficulties in providing conductive structures of small dimension and high tolerance and having suitable bulk electrical and thermal conductivity properties made via 3D additive build manufacturing.
  • the present invention may use selective metallization processes and materials in conjunction with non-conductive structure(s) provided by 3D additive build processes described below to provide micron scale accuracy conductive structures within a multi-structure and/or multi-component device environment, for example.
  • selective metallization connotes the ability for one material to take or bind to a metallization process or to a metallization catalyst with respect to a second material which does not so take or bind when both are exposed to the same metallization process.
  • selective metallization permits selected structures to be metallized while other structures within the overall device/system architecture are not. A number of motivations for this selectivity have been discovered.
  • 3D additive build manufacturing has come to include additive manufacturing methods such as Selective Laser Sintering (SLS), and StereoLithography (SLA), and micro-stereolithography.
  • additive manufacturing methods include Laminated Object Manufacturing (LOM), Fused Deposition Modeling (FDM), and MultiJet Modeling (MJM), and Inkjet. Areas of substantial overlap can exist between many of these methods, which can be chosen as needed based on the materials, tolerances, size, quantity, accuracy, cost structure, critical dimensions, and other parameters defined by the requirements of the object or objects to be made.
  • 3D additive build manufacturing has come to be known by a variety of names, including 3D printing, for example.
  • 3D additive build manufacturing and “3D printing” are used interchangeably.
  • Three dimensional (3D) printing is a form of additive fabrication or additive manufacturing technology wherein a 3D object is created by laying down or forming successive layers of material at precise positions.
  • 3D printers have the ability to print structures made of several materials with different mechanical and/or physical properties in a single build process, and operate by taking a 3D computer file and constructing from it a series of cross-sections taken in the build direction. Each cross-section layer is then printed one on top of the other to create the 3D objects.
  • layer when the term “layer” is used herein, it means one or more levels or of potentially patterned strata and not necessarily a continuous plane.
  • a 3D printer can create a 3D object from an extrusion of a liquid that is solidified by either a change in temperature or a chemical change, for example, such as melting or polymerization.
  • a layer-wise build may be used in some instances, a vector-based build where 3D motions both in and out of a plane are determined based on the part to be made, machine physics, material chemistry, and other manufacturing considerations can also be used.
  • a number of different technologies are available for performing 3D printing. Their main differences are in the way layers are built to create objects. Some methods use melting or reflow to produce the layers such as in “selective laser sintering” wherein one or more lasers selectively fuse particles from a bed of particles. After each cross-section is created, a new layer of powder is applied to the top and the processes repeated until a desired 3D structure is obtained. Depending on desired properties, each layer of powder may be the same, or a layer of different powder may be applied. Each powder layer may be uniform or the layer can be sectioned with differing materials, thus providing the capability of obtaining objects with differing characteristics and/or functionalities.
  • This technique is also useful for producing fused plastic layers and/or plastic objects or metal layers and/or metal objects or ceramic layers and/or ceramic objects.
  • a bed of metallic powder is provided followed by exposure to a laser.
  • a combination of materials that include more than one of metal, ceramic, plastic, semiconductor, and others would be desirable.
  • it is desirable in such a process to control factors such as stress, shrinkage, CTE, material cohesion and inter-material interface adhesion in constructing or building such a 3D device of highly heterogeneous material types.
  • thermoforming fabrication Another method in additive manufacturing through 3D printing is “hot melt extrusion fabrication” wherein materials, supplied as pellets and/or a filament may be liquefied and deposited by one or more extrusion heads.
  • the pellets and/or filaments may be the same or different and may be melted and mixed prior to or during extrusion.
  • the “inkjet” may deposit layers, for example, from a micron to tens of microns or more in thickness in each layer.
  • the layer may be cured as the process proceeds, for example, by drying.
  • inkjet printing layers can be applied and cured one layer at a time.
  • One or more printing heads using similar or different materials, can be used to build structures on a substrate.
  • Another inkjet printing technique is to inkjet a binder onto a bed of powder to bind the powder into a solid layer. The process continues until the desired 3D object is obtained.
  • Another method of additive manufacturing using liquid materials is stereolithography wherein a vat or layer of liquid polymer is exposed to a light. The exposed regions of liquid polymer harden into solid layers. The substrate upon which the solid layer region was fabricated is then moved down in small increments and the liquid polymer is again exposed to light. The process repeats until the model is built. The liquid polymer is then drained from the vat, leaving the solid model.
  • This method also allows for replacing the liquid polymer with a different liquid polymer at various stages during the building process, thus allowing for the use of different materials for different applications and with different properties.
  • Other techniques include 2 -photon stereolithography in which a 3D structure is obtained using one focused laser to create a 3D gel. This is followed by a second laser that cures the desired sections of the gel into a solid, with the uncured gel being washed away.
  • Materials useful for the 3D fabrication of electronic and/or mechanical structures include, but are not limited to, dielectric materials, for example, ABS, polyacrylates, BCB, polyimides, polyamides, polyurethanes, polyesters, polycarbonates, polysulfones, polysilicon materials and other materials known in the art to be useful as dielectric for fabrication of electronic and/or mechanical structures. While polymers may be most easily deposited materials using current 3D printing techniques, semiconductors, ceramics, and metals are typically found in electronic components. Selective laser sintering is one of the only additive manufacturing techniques that currently provides near bulk density metals, however its accuracy and resolution are low compared to jet deposited or extrusion deposited 3D printers.
  • 3D printing techniques that have a direct thermal component such as laser sintering can often provide a final structural material; however, other approaches such as baking the final printed structure to remove binders and certain polymer components could be equally used to obtain the final desired material properties.
  • a polymer could be heat treated to remove solvent and leave behind a solid, or a polymer-ceramic composite could be heat treated to decompose the polymer and leave behind a ceramic.
  • the materials may be used alone or may be formulated into inkjet compositions, or as meltable solids for hot melt extrusion application, or as monomeric, polymeric, or mixtures of materials for stereo-lithographic applications.
  • Other useful materials may be applied by additive manufacturing or 3D printing processes and further processed in a curing step, for example, epoxy, novolac, melamine, glycidyl ethers of poly-bis-phenol A, or combinations thereof, and other crosslinking systems which require a thermal cure, a photo cure or a combination thereof.
  • one or more curing catalysts aid in the curing step, for example, photoacid generators, thermal acid generators, photobase generators and/or thermal base generators.
  • the materials for 3D printing may be combined into one or more useful printing compositions.
  • the compositions for 3D printing or additive manufacturing comprise a “metallizable composition”. These compositions may contain or may selectively bind to metallization catalysts, which allow for the deposition of metal using wet chemical processes or gas phase processes.
  • Metallization catalysts include, for example, palladium-tin alloys which are activated to palladium catalyst during processing. Other catalysts include organic palladium materials which may be activated to palladium catalyst by thermal or chemical or plasma treatment.
  • a metallization precursor may be included in the dielectric being deposited. In some cases a material is chosen that can readily adsorb or absorb or bind to a catalyst from a solution in relation to a second material that does not absorb or adsorb or bind to the catalyst.
  • the material is deposited, the material may optionally be etched and may be optionally exposed to an additional step to concentrate the catalyst such as a plasma etching step that selectively removes a small amount of the polymer or binder material and leaves the catalyst. Further processing needed to activate a catalyst such as a palladium chloride composition, like exposure to a reducing agent, is known in the art. The material can then be plated.
  • the printing compositions may comprise photoimageable materials.
  • a photodefinable dielectric material for example, glycidyl ethers of poly-bis-phenol A/photoacid generator systems
  • photolithographic techniques such as, for example, exposing the material to actinic radiation through a photomask and removing any unexposed material using a suitable developer solution. This method could allow a two-fold patterning process, the first being the pattern provided by the 3D deposition, the second being a photolithographic process, and may provide more versatility in manufacturing a 3D structure.
  • Other photolithographic materials may also be used for example, acrylate systems, BCB systems, silicon based systems and/or novolac systems.
  • metal may selectively be deposited, for example, copper, nickel, gold, tin, zinc, silver, palladium, tin, lead, aluminum, chromium and/or alloys.
  • the composition containing the metallization catalyst has its surface etched back to remove some of the non-catalytic dielectric material, thereby increasing the number of catalyst sites in the surface of the composition potentially allowing for improved plating.
  • etching steps to concentrate catalysts on a surface of the metallizable plastic may include plasma processes such as, for example, plasma etching in the presence of oxygen or may include wet chemical etching.
  • dielectric materials not containing metal catalysts may be deposited along with catalyzed dielectrics. These can be deposited at the same time when using inkjet or hot melt extrusion printing by employing more than one printing head and/or sequentially such as, for example, with stereolithography where in one material is deposited from a liquid composition, the composition flushed and replaced by a second liquid composition which is then deposited. This allows for selective metallization wherein selected structures are metallized while other structures are not.
  • two dielectric compositions may be deposited onto a substrate using 3D printing methods, wherein only one of the dielectric compositions can be catalyzed with a plating catalyst and subsequently plated and the other does not take to or have the catalyst incorporated and so does not plate in the same metallization process.
  • one of the dielectric compositions may be treated with conventional plating on plastic processes, for example, slight swelling and etching of the dielectric followed by contact with a catalyst bath where the catalyst becomes adherent to the dielectric.
  • the treated dielectric then is plated in a plating bath.
  • the other deposited dielectric is selected such that it is not affected by the catalyzing and therefore the plating processes.
  • Plating of the selected dielectric may be performed for example by electroless plating processes and/or by a combination of electroless plating followed by electrolytic plating, for example.
  • the embodiments of the current disclosure provide for select plating and non-plating of the deposited 3D structure.
  • the selective metallization may also occur by a gas or vapor phase reaction, for example in atomic layer deposition (ALD), a polar material may allow a series of gas phase reactions that metalize a surface were as a non-polar material may not start a reaction.
  • ALD atomic layer deposition
  • the present invention includes the 3D printing of sacrificial materials along with one or more of the metallizable dielectric and the non-metallizable dielectric.
  • the 3D printed materials may be used to provide both a sacrificial scaffolding, for example, a starch, and a permanent material, for example, ABS.
  • a sacrificial scaffolding for example, a starch
  • a permanent material for example, ABS.
  • the final object is obtained when the sacrificial scaffolding is dissolved or otherwise removed.
  • a sacrificial scaffolding material that can be dissolved after printing
  • two materials one selectively metallizable in reference to the second which remain intact during the process which removes the sacrificial scaffolding material.
  • the metallizable material may be metallized during a metallization step, after which the selectively metallized material may optionally be removed in a second removal step. If the material is optionally removed, it may be desirable to ensure the metal is deposited to a thickness such that it can be free-standing. In some cases it may be desirable to have a dielectric, a metal, and a void structured in arbitrary and determined complexity in the final structure.
  • a dielectric such as a selectively metallizable plastic
  • a metal coating may not be desirable.
  • a metal encapsulated dielectric may for example fail under temperature cycles due to a mismatch between the metal and dielectric properties, and therefore one may prefer to remove the metallized dielectric from the metal coating, similar to the removal of sacrificial materials that can serve as scaffolding.
  • 3 or 4 materials to realize such a device a selectively metallizable dielectric, a second dielectric that does not become metallized in the same process, the metal that becomes coated on the metallizable dielectric, and optionally a scaffolding material.
  • the scaffolding material is removed, then metal is deposited selectively on one of the two dielectric materials, and then the metallized dielectric material may also be optionally removed by a final removal process, leaving a desired metal, air, dielectric structure.
  • Materials suitable as sacrificial materials can be printed using 3D techniques. Such materials are platable using the techniques described above, that is, they contain plating catalysts and/or can be swell/etched/catalyzed, and/or can be readily removed to leave behind a full or partial metallic structural element. Such materials include, for example, polyacrylates, polycarbonates, cellulosic materials, and other materials capable of being removed by a remover.
  • Removers include organic solvents, for example, glycol ethers, glycol ether acetates, alcohols, esters, ethers, ketones, halogenated solvents, DMF, DMSO and the like; aqueous solvents such as acids and bases ranging in pH from about 0 to about 13 with or without surfactants and/or emulsifiers; and/or thermal vaporization, and/or combinations thereof.
  • the sacrificial materials may dissolve, emulsify, particulate, depolymerize, and/or become gaseous. Additionally, mechanical assistance, for example ultrasonification, may also be used.
  • the selectivity of the removers and the removal process require that the dielectric materials are not affected during the removal process.
  • the current application also discloses depositing metalizable dielectrics, non-metalizable dielectric materials and sacrificial materials in a plurality of layers.
  • the versatility of 3D printing allows a deposition of a variety of sequences of layers based on the electronic and/or mechanical structural requirements.
  • 3D-MERFS and PolyStrata®-like devices can be prepared by the disclosed methods. See U.S. Pat. No. 7,012,489, U.S. Pat. No. 7,649,432, U.S. Pat. No. 7,948,335, U.S. Pat. No. 7,148,772, U.S. Pat. No. 7,405,638, U.S. Pat. No. 7,656,256, U.S. Pat. No.
  • materials can be mixed in a reservoir prior to the printing of the material. This is particularly useful for materials that are highly reactive so that two materials may start to react with each other as they are being printed. In this manner, viscosity can build up quickly to help form a solid layer when the layer is applied.
  • Two printing devices may work in concert with each other so that two parts of highly reactive materials can be printed simultaneously and begin reacting immediately, such as, for example, an epoxy novolac layer is printed from one printing device and an acid is printed by a second printing device directly onto the epoxy novolac layer. As soon as the acid comes into contact with the epoxy, a crosslinking reaction occurs.
  • some layers can be cured by heat and/or light, so that some of the printing heads can be replaced by or used in conjunction with heating elements and/or light emitting elements which may be applied to a layer which has been deposited. In this manner, the layers may be selectively cured or allowed to remain uncured, suitable for further processing.
  • the electronic and/or mechanical structure may be deposited on a variety of different surfaces since the process is not dependent on coating processes that are typically required. Thus, a planar or nonplanar surface may be used to deposit the layers. Surfaces which are partially or fully populated with electronic devices and/or components may also be used and fabrication can take place on these surfaces, which is difficult to achieve with current conventional methods.
  • the method for building electronic and/or mechanical structures may include depositing materials using conventional deposition processes, including, for example, spin coating, lamination, dip coating, curtain coating, slot coating, spray coating, off-set coating and the like. It may be desirable to planarize the structures after every layer or periodically, or provide selective removal steps during the processing of one or more layers. To that end, other conventional processes may also be included, for example, chemical-mechanical-polishing, lapping, mechanical machining, diamond turning or other precision turning, milling, grinding, plasma etching, laser ablation, and/or combinations thereof.
  • conventional deposition processes including, for example, spin coating, lamination, dip coating, curtain coating, slot coating, spray coating, off-set coating and the like. It may be desirable to planarize the structures after every layer or periodically, or provide selective removal steps during the processing of one or more layers.
  • other conventional processes may also be included, for example, chemical-mechanical-polishing, lapping, mechanical machining, diamond turning or other precision turning, milling, grinding, plasma etching, laser ablation, and
  • the 3D printing process can provide structures of different shapes and/or different heights, as well as structures that have cavities and/or walls into which discrete components may be placed later during manufacturing.
  • the current application for patent is not restricted to size such that objects from microns to meters can be fabricated using these methods and is primarily only limited by the resolution capabilities of the print head or the scale of the printer. Additionally, the substrate used for deposition may function only as a support onto which the objects, and all its embodiments, are printed, such that the substrate may later be removed providing a stand-alone object with selectively metallized portions on the object.
  • printing heads 10 , 11 are provided which may deposit droplets of first and second materials 12 , 13 to form first and second layered structures 14 , 15 on a substrate 16 .
  • droplets may refer to liquids, solids, e.g., powders or nanoparticles, or combinations thereof, such as a suspension or slurry, for example.
  • Droplets may be of a volume of picoliters to milliliters depending on the dimensional size, tolerances, and complexity of the device being fabricated.
  • the first and second materials 12 , 13 may have the same or different composition, and the printing heads 10 , 11 may be the same or different, depositing different sizes and/or shapes of droplets as desired.
  • FIG. 1A illustrates two printing heads 10 , 11 , more than two printing heads may be used, each of which may deposit materials simultaneously and/or sequentially.
  • a single printing head 10 may be used to deposit each of the first and second materials 12 , 13 .
  • the printing heads 10 , 11 and the substrate 16 are typically moved relative to one another using linear motors, gantry robotic systems, SCARA robotic systems, electrostatic deflection of the particles, raster scan printing motion, or other relevant techniques, for example.
  • the printing heads 10 , 11 may deposit layer upon layer until a desired thickness of structure is obtained.
  • the printing heads 10 , 11 may provide multiple materials by switching from one material to another during the process, and differing ones of the multiple materials may be printed over each other to provide complex patterns. When layers are printed over each other, openings may be left in the layers to allow solution flow into and out of the structure formed of the layers.
  • the substrate 16 may comprise any surface useful in forming an electronic and/or mechanical device including, for example, silicon materials, ceramic materials, glass materials, metal materials, integrated circuit containing semiconductor materials, circuit board materials, RFID substrates and the like. It may for example be a SiGe or InP wafer containing integrated circuits.
  • the substrate 16 may be flat or, because of the versatility of the process, may be populated with components and/or structures that are already resident on the substrate 16 .
  • the substrate 16 may be a permanent part of the end product or it may be a temporary platform on which the structures are grown and/or removed and/or detached using, for example, a sacrificial layer.
  • FIG. 1B illustrates the selective metallization of the second layered structure 15 with a metal coating 17 , which can be achieved by electroless plating techniques, electrolytic techniques and/or direct plating, for example.
  • one or more of the materials 12 , 13 may contain conductive polymers such as, for example, polythiophene, polypyrrole and/or polyaniline.
  • Conductive materials may also include, for example, graphene, carbon, nanocarbon constructions and/or other materials, including non-metals, which may be useful as electroplating conductors.
  • one of the materials may contain plating catalysts.
  • the catalysts may include one or more of palladium/tin colloid and/or their chloride salts, for example.
  • the substrate 16 containing layered structures 14 , 15 may be immersed in a commercial activating solution which for example reduces a tin salt or palladium salt to elemental palladium and/or tin in the optionally catalyst-containing second material 13 .
  • the substrate 16 may then be immersed in a commercial electroless plating bath and operated to obtain a desired metal thickness.
  • Etching can be performed in liquid baths such as, for example, strong alkali materials which have some sensitivity to strong alkali, or the materials may be plasma etched for example in an oxygen containing plasma as described above.
  • FIG. 1C illustrates a process similar to that of FIG. 1A in which printing heads 10 , 11 deposit droplets of first and second materials 12 , 13 to form first and second layered structures 24 , 25 on a substrate 26 ; however, a metal layer 20 is provided on the substrate 26 at the location in which the second structure 25 is to be deposited.
  • a metal 22 may be further deposited to the exposed surfaces of the second structure 25 , in a similar manner described above with regard to the metal 17 of FIG. 1B , allowing the second structure 25 to be completely surrounded by metal 22 , FIG. 1D .
  • the second deposited material 13 comprising the second structure 25 may be removed to leave a stand-alone, 3D metal structure 28 , FIG. 1E .
  • the deposited second material 13 may be removed by one or more of dissolution, thermal vaporization, polymer deconstruction, and other suitable methods.
  • the dissolution of the second structure 25 may be enhanced by printing an additional sacrificial material 18 over a portion of the second structure 25 so that a selected region of the second structure 25 is not metallized to form a “release hole”, FIGS. 1F, 1G .
  • This additional sacrificial material 18 may be stripped selectively revealing an unmetallized region of the second structure 25 which may then be dissolved and/or otherwise removed from the metal shell 29 .
  • the additional sacrificial material 18 may be the same or different from a sacrificial material 25 and/or may be a thin layer of a dielectric that selectively does not metallize under the conditions of second structure 25 .
  • the next step from FIG. 1G then would be for it to look similar to FIG. 1E if the option to remove the materials of 18 and 25 is chosen.
  • materials which are suitable for depositing can range from dielectric materials such as, for example, polyimides, polysulphones, polysilanes, and the like, as well as polyacrylates.
  • temporary materials may also be used such as, for example, waxes, solvent soluble materials and/or aqueous solution soluble materials. These materials can be important when the final fabricated device has air gaps or voids as shown in FIG. 1E .
  • FIG. 2 illustrates another exemplary process for depositing materials for electronic and/or mechanical structures using hot melt extrusion fabrication techniques wherein a printing head 37 deposits material 33 onto substrate 35 .
  • a printing head 37 deposits material 33 onto substrate 35 .
  • the material that feeds into the printing head may be changed during the process to allow deposition of different materials from the same printing head.
  • multiple print heads containing different materials may be used in sequence or in parallel. In this process, materials are pre-heated, and/or may be premixed with other materials prior to deposition.
  • FIG. 3 illustrates stereolithography as a further exemplary process for creation of 3D structures of the present invention.
  • a substrate 30 is placed in a bath 32 containing a curable material, such as a liquid monomer or liquid polymer 34 .
  • An exposure device 36 exposes the monomer to curing radiation 38 , which may be, for example, ultraviolet radiation to provide a cured layer pattern 40 at selected locations on the substrate 30 .
  • curing radiation 38 may be, for example, ultraviolet radiation to provide a cured layer pattern 40 at selected locations on the substrate 30 .
  • the substrate 30 may be submerged further into the bath 32 to a chosen level, and a new liquid layer cured on top of the substrate 30 and/or portions of the existing layer pattern 40 .
  • the exposure may be repeated with each new layer adhering to previous layers 40 , and the substrate 30 again submerged further into the bath 32 .
  • the process may continue until the desired 3D structure is created.
  • the liquid monomer 34 may be drained and replaced with a different material during the process allowing for the use of more than one type of material for the building of the structure. Additionally, there may be more than one exposure unit 36 exposing the liquid monomer 34 at the same or different times.
  • FIGS. 4-16 an exemplary process of the present invention is illustrated using an inkjet process as an example of a 3D additive build process of the present invention in the fabrication of a three dimensional, multilayered, coax cable 78 , FIG. 16 . It is to be understood that other suitable 3D manufacturing techniques may also be used instead or in combination, but inkjet printing has been shown merely for purposes of illustration and not limitation.
  • a substrate 50 is provided having the bottom metallic wall 52 of the coaxial waveguide conductor cable 78 disposed thereon, FIG. 4 .
  • a sacrificial material 54 a, 54 b may be deposited by 3D inkjet printing 56 , or other suitable 3D additive build process, in a desired pattern to define a location 53 of a lower portion of the coax sidewall 68 (cf. FIG. 16 ) and a pocket 55 for additional desired structure(s) and/or devices, such as a non-conductive support post for a central conductor 69 of the coax cable 78 , FIG. 5 .
  • a passivation layer 58 may then be deposited in the pocket 55 , FIG. 6 .
  • the passivation layer 58 may be non-conductive and prevent metal plating on the passivation layer 58 .
  • Metal plating, or other suitable metallization processes, may next be performed to fill the location 53 with metal to provide a lower sidewall portion 60 a disposed in continuity with the bottom metallic wall 52 , FIG. 7 .
  • planarization techniques may be included here to planarize the uppers surfaces 61 to remove excess metal which might be deposited due to overplating. Planarization in this and/or any of the steps requiring planarization may be achieved by one or more of CMP, lapping, polishing, grinding, diamond turning, lathe turning, milling, and the like. This may optionally be done instead after the next step for the support post, or may optionally be done at any step if and as needed.
  • a support post 62 may be deposited by inkjet printing a non-conductive material 63 , such as any of the above mentioned dielectric materials, over the passivation layer 58 to provide support for the central conductor 69 of the coax cable 78 , FIG. 8A . Planarization may optionally be used at this stage to provide a level surface, although adjustments may be made in the printing process to allow for any over deposition. While deposition of passivation layer 58 and support post 62 are shown here as comprising two separate materials and steps, the passivation layer 58 and support post 62 may comprise the same material, such as a non-metallizable material, and may be formed in one deposition or forming step.
  • an object 65 may be inserted instead in the pocket or recess area 55 , FIG. 8B , to realize devices other than the coax example illustrated in FIGS. 4-16 .
  • the object 65 may include one or more of a chip (integrated circuit), a magnet, and a ferrite and could be inserted in the pocket 55 .
  • a material or device that is not compatible with the utilized 3D additive build process e.g., due to chemical or thermal requirements, or a device that needs more or less processing than the 3D additive build process allows could be inserted.
  • the object 65 could be bonded to the passivation layer 58 and/or the bottom metallic wall 52 under the passivation layer 58 by one or more means such as, for example, a conductive or non-conductive adhesive, or the object 65 could be mechanically locked in place by subsequent deposition steps. Any suitable means such a pick and place, manual insertion, or self-assembly in a fluid using electrostatic attraction could be used to incorporate the device/object 65 .
  • sacrificial material 64 a, 64 b may be deposited by 3D inkjet printing, or other suitable 3D additive build process, to define a location 66 a of an intermediate portion of the coax sidewall 68 and a location 66 b of the central conductor 69 , FIGS. 9, 16 .
  • a seed layer 67 that allows plating to occur on the support post 62 such as a metallization catalyst, or conductive thin film, may be deposited by inkjet printing, FIG. 10 .
  • Metal plating, or other suitable metallization process may next be performed to fill the location 66 b with metal to provide a center conductor 69 , and to fill location 66 a with metal to provide an intermediate sidewall portion 60 b disposed in continuity with the lower sidewall portion 60 a, FIG. 11 .
  • Sacrificial material 70 a, 70 b defining the location 71 a of a top portion of the sidewall 68 and a location 71 b of a top layer of the outer conductor 79 of the coax cable 78 is now deposited, FIGS. 12, 16 .
  • the thickness of 70 a may be than then thickness of 70 b so that plating of the top layers of the sidewall 68 and a top layer of the outer conductor 79 can occur concurrently.
  • Dissolution plugs 72 may optionally be deposited via inkjet printing at selected location(s) on the surface of the sacrificial material 70 b, FIG. 13 .
  • the plugs 72 may be composed of material that does not plate with metal and can be removed at a later time to reveal holes in the top of the complete coax cable 78 allowing a passageway for the sacrificial material 54 b, 64 b, 70 b to pass during a removal process.
  • a seed layer 74 may be deposited on the sacrificial material 70 b allowing the top layer of the sacrificial material 70 b to be plated in all the areas except where the dissolution plugs 72 are located, FIG. 14 .
  • Plating may then be performed to provide the top of the sidewall 60 c and the top layer 76 of the coax cable 78 , FIG. 15 .
  • the sacrificial dissolution plugs 72 and the sacrificial material 54 a, 54 b, 64 a, 64 b, 70 a, 70 b may be removed using suitable dissolution methods, such as those described herein, to provide for a coax cable 78 , FIG. 16 .
  • the dissolution plugs 72 may be provided at any suitable location, including for example, in the sacrificial material 54 a, 64 a, 70 a.
  • the holes provided by the dissolution plugs 72 may be in locations and of a size and shape to minimize disruption of the desired electrical properties.
  • conductive structures may be provided via metallization of selected non-conducting structures to yield solid or hollow structures having conductive surfaces as an alternative to structures with bulk electrical and/or thermal conductivity.
  • a 3D deposition device 84 may deposit a first material 82 on a substrate 80 to provide a first layer 82 a, FIG. 17 .
  • the deposition device 84 may be any device which can implement any suitable 3D additive build process, such as solid polymer printing, stereolithography, and/or similar method.
  • the deposition device 84 may schematically represent the deposition and patterning process for a laminated plastic film and/or patterning process for a spin coated photoresist.
  • the first material 82 may comprise a selectively metallizable polymer, plastic, and/or dielectric material and may be deposited in a thickness on the order of microns to centimeters depending on the scale of the object being created.
  • a second layer 82 b of the first material 82 may be deposited at selected location(s) on the first layer 82 a, FIG. 18 .
  • a second material 90 may be deposited at selected location(s) on the first layer 82 a through a deposition device 88 which may be the same or different from the deposition device 84 .
  • the second material 90 may be provide a support post 90 a at a location and also create voids 91 between the support post 90 a and second layer 82 b.
  • the second material 90 may be desirably chosen to be different from the material 82 of the first layer 82 a so that the first layer 82 a can be selectively metallized by a suitable metallization process, while the support post 90 a is not metallized.
  • Materials that are selectively metalizable, such as first material 82 can contain catalysts or other active sites that attract metal materials and compositions in their bulk or specifically on their surface.
  • the first material 82 may comprise a catalyzed form of the second material 90 , where the catalyst renders the first material 82 metallizable. Additionally or alternatively, differences in physical properties, such as surface roughness, may be utilized to render a material selectively metallizable.
  • first and second layers 82 a, 82 b, having the metallizable compositions may be selectively metallizable in comparison to the support post 90 a.
  • a sacrificial scaffolding material 94 may be deposited through a deposition device 92 , which may be the same or different than the deposition devices 84 , 88 , to selectively fill one or more of the voids 91 to provide a scaffolding 94 a for subsequent structures or layers that may need to be suspended during the 3D additive build process.
  • the use of a sacrificial scaffolding material 94 may be predicated on the need to suspend structures or to provide structures with a void region below them and may be used to support materials deposited with deposition devices 84 , 88 .
  • the scaffolding 94 a may be removed in a subsequent step.
  • the scaffolding 94 a may not be required if, for example, a stereolithography or similar process is used where a liquid resin serves a similar function, e.g., where selective polymerization above a liquid layer may form features suspended by the unpolymerized liquid.
  • a liquid resin serves a similar function
  • other means to produce a suspended feature may be used, for example, the use of a rapidly solidifying material and forces such as cohesion or surface tension may be used in a 3D additive build system to create a suspended material without the need for a scaffolding material.
  • a similar build process can be used without the use of a scaffolding 94 a.
  • the deposition device 84 may next deposit a third layer of material 82 comprising structures 82 d, 82 c disposed over the support post 90 a and the second layer 82 b, respectively, FIG. 21 .
  • Additional sacrificial material 94 may be deposited through deposition device 92 over the scaffolding 94 a in the voids between structures 82 d, 82 c to provide additional scaffolding 94 b that may be subsequently removed, FIG. 22 .
  • the deposition device 84 may then deposit a fourth layer 82 e, which may comprise the same as materials of layers 82 a - 82 d, over the structure 82 c, FIG. 23 , and additional sacrificial material 94 may be deposited through means 92 over structures 82 d and scaffolding 94 b to provide additional scaffolding 94 c, FIG. 24 .
  • An upper structure 82 f comprising the same material as the first layer 82 a may be deposited through device 84 over the fourth layer 82 e and additional scaffolding 94 c, FIG. 25 .
  • the scaffolding 94 a - 94 c may be selectively removed to provide a resulting coaxial-shaped structure 200 having a void 106 (air dielectric) therein, FIG. 26 .
  • the scaffolding 94 a - 94 c may be dissolved through one or more of a solvent removal step, a thermal sublimation step, and a vapor removal process.
  • the scaffolding 94 a - 94 c may comprise a starch and removal may occur, for example, in hot water with ultrasonic agitation.
  • the coaxial structure 200 may be nonconducting in view of the choice of materials 82 , 90 utilized in the 3D additive build process, with layers 82 a - 82 f collectively providing a metallizable core 202 for use as an outer conductor and layer 82 d a metallizable core for use as an inner conductor, FIG. 26 .
  • a metallization process may thus be performed to metallize those structures comprising the first material 82 (i.e., layers 82 a - 82 f ) while the support post 90 a remains unmetallized, FIGS. 27A, 27B .
  • the first material 82 is selectively metallized relative to the support post material 90 due to compositional and/or surface physical differences, for example, between the first and second materials 82 , 90 , leading to a difference in the reaction of such materials 82 , 90 to the particular metallization process utilized, i.e., selective metallization between materials 82 , 90 .
  • the majority of the device may comprise a non-metallizable material, and any mixture and number of layers of metallizable material, non-metallizable material and voids may be produced with the present exemplary process.
  • FIG. 27A, 27B schematically illustrate end-on and side cross-sectional views, respectively, of the coaxial structure 200 after the selective metallization, such as exposure to a metallization sequence involving an electroless copper or electroless silver or electroless gold coating process.
  • a metallized inner conductor 97 is provided by the metal coating 97 a disposed over layer 82 d
  • a metallized outer conductor 110 is provided by the metal coatings 110 a, 110 b disposed over the exterior and interior surfaces of layers 82 a - 82 c, 82 e, 82 f, respectively.
  • the inner conductor 97 having its core 82 d formed, for example, as part of the process illustrated in FIG.
  • the coaxial inner conductor 97 may extend upward to a top surface (on the left side) and exit at a port in the plane of the center conductor 97 (at the right side).
  • the metal coatings 97 a, 110 a, 110 b may be submicron or may be several, 10's, 100's, or 1000's of microns thick depending on the scale of the structure formed and may be formed through means known in the arts of electroless and/or electrolytic plating as well as in electroforming.
  • the coatings 97 a, 110 a, 110 b may comprise more than one layer of metal, for example, of a layer of nickel and a layer of gold. Due to the RF skin depth, a thickness of several microns or less is capable of providing a low loss transmission line at frequencies above one or more GHz. It is noted that in some embodiments, a triaxial transmission line could also be formed in a similar sequence by making the coatings 110 a, 110 b formed on the inner and outer surfaces of the core 202 discontinuous and using a conductive substrate, for example.
  • support posts 90 a may be deposited at the step illustrated in FIG. 19 .
  • Such support posts 90 a can take forms including blocks, stubs, straps, sheets, rods and the like. While a simple transmission line section is illustrated, it should be clear that complex 3D multilayer networks of coax and waveguide components can be made by the exemplary 3D additive build process. While an inner conductor 97 is shown in this example of coax, by omitting the inner conductor 97 , hollow core waveguides can equally be created in the same process.
  • integration of DC bias and control lines, chip mounting regions, connectors and connector flanges, and elements of the device or system housing itself can be formed by 3D additive build processes.
  • the exemplary 3D additive build process may be altered beginning at the step of FIG. 19 by omitting the support post 90 a and filling the voids 91 and region that had been occupied by the support post 90 a with a sacrificial material to provide a scaffold 94 d, FIG. 28 .
  • a support bar 102 may be deposited over portions of the second layer 82 b and scaffold 94 d.
  • the support bar 102 may comprise metallizable portion 102 b and non-metallizable portions 102 a, 102 c.
  • metallizable portion 102 b and non-metallizable portions 102 a, 102 c may be provided as a bulk property of the support bar 102 , such as by providing a catalyst or other appropriate material to the metallizable portion 102 b while the support bar 102 is being deposited.
  • the metallizable portion 102 b may be deposited as a separate material different in composition from the non-metallizable portions 102 a, 102 c.
  • the metallizable portion 102 b may be rendered metallizable as compared to the bulk properties of the support bar 102 by altering the surface properties, physical or chemical, of the support bar 102 at those locations.
  • Support bar(s) 102 supports the inner conductor 97 providing the support function previously provided by support post 90 a by virtue of the ends of the support bars 102 being embedded in the outer conductor core at layer 82 c.
  • Such a use of support bars 102 having metallizable portion 102 b, and non-metallizable portions 102 a, 102 c may be implemented in other structures, such as in lieu of the support post 62 present in the example of FIG. 16 , as illustrated in FIG. 30 .
  • Optional release holes may be provided in closed structures or those that have limited flow to facilitate removal of the scaffolding 94 a - 94 c and/or to facilitate the required fluid flow for the metal coating steps.
  • Such holes may be added to upper layer 82 f, or any layer, prior to metallization in locations and of a size to minimize disruption of the electrical properties desired, as per the use of dissolution plugs 72 as illustrated in FIGS. 1F, 1G, 13-15 .
  • the use of such release holes and their design and placement can be designed by one skilled in the art and may be assisted through software such as Ansoft's HFSS® for electromagnetic structures, Ansoft's Ansys® for mechanical or fluidic structures, and/or similar software products.
  • a substrate 80 is used in the sequence illustrated in FIGS. 17-29B , structures could readily be released from the substrate 80 , for example, by applying a sacrificial material, such as material 92 , and/or by mechanically detaching the object from a platform, for example.
  • the selectively metallizable material 82 may remain in the final device; however, if the metal layers 90 a, 110 a, 110 b are sufficiently thick, the selectively metallizable material 82 may be removed after deposition of the metal, for example through one or more openings in the metal layers 90 a, 110 a, 110 b using methods which may leave the supports posts 90 a intact.
  • an electronic application is illustrated by way of example, many other applications such as fluidic devices, mechanical devices, and the like can be created.
  • the build process outlined may contain more or fewer layers and more or fewer materials depending on the end device and/or structure being made.
  • the build process could be stopped at any point and items or other materials maybe inserted into the partially complete structure and the build process then continued to embed and/or interconnect the inserted materials and/or devices.
  • passive or active electronic devices, magnets, powders, liquids and/or such may be put into cavities or receptacles and the build process continued to partially or fully interconnect or encapsulate them.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Composite Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)
  • Micromachines (AREA)
  • Powder Metallurgy (AREA)

Abstract

The present invention relates to the fabrication of complicated electronic and/or mechanical structures and devices and components using homogeneous or heterogeneous 3D additive build processes. In particular the invention relates to selective metallization processes including electroless and/or electrolytic metallization.

Description

    RELATED APPLICATIONS
  • This application is a continuation of U.S. application Ser. No. 14/232,396, filed Jan. 13, 2014, now U.S. Pat. No. 9,993,982, which in turn is a 371 application of International Application No. PCT/US2012/046734 filed Jul. 12, 2012, which claims priority to U.S. Provisional Application No. 61/507,496 filed Jul. 13, 2011. Each of the foregoing applications is hereby incorporated herein by reference.
  • FIELD OF THE INVENTION
  • The present invention relates to the fabrication of electronic and/or mechanical structures and components and devices such as those used in the electronics industry. In particular, the present invention relates to using homogeneous or heterogeneous materials in three dimensional fabrication of electronic and/or mechanical structures and components and devices. Additionally, the present invention relates to selective metallization processes including electroless and/or electrolytic metallization.
  • BACKGROUND OF THE INVENTION
  • Improved methods of fabricating electronic and/or mechanical structures continue to drive the electronics and other industries. More and more components are being added to devices that are getting increasingly complex and smaller. As a result fabrication techniques are required to provide electronic and/or mechanical components and/or parts that have increased functionality as well as to take up less space in the device and on substrates used in the device. The fields of micro-mechatronics, microsensors such as multi-axis gyroscopes, electrical circuits, and microwave and waveguide circuits are rapidly advancing. The ability to achieve customization in such devices and still allow them to be affordably manufactured has remained a challenge. Most industrial shaping, forming, and production processes achieve economy of scale only by near direct duplication of a device. For example, consumer electronics are affordable when making millions of complex integrated circuits that are nearly identical. Still there are many fields where the ability to make custom 3D parts of heterogeneous materials has remained elusive and substantial sacrifices in dimensional accuracy and precision, material diversity, upward or downward size scaling, for example from microns to meters, and/or other limitations have relegated most direct 3D manufacturing to either be unaffordable, impractical, or find limited fields of use, for example to make plastic prototypes for novelty, engineering understanding, or marketing.
  • In micromechanics, processes to make small components often revolve around removal rather than additive processes such as turning or milling operations and such devices are typically made one at a time. Alternatively, molding is used but is limited in the complexity of the parts and number that can be made and are usually of limited material diversity. For example, one would not expect injection molding to make parts of plastic, metal, and ceramic in the same molding operation. Processes that have been created to address the fabrication of components and devices of very high precision and accuracy traditionally revolve around photolithographic processes and deposition and/or etching processes. For example, in traditional thin film metallization patterning for integrated circuits and circuit boards, temporary photoresists are patterned on metallic layers followed by etching of the exposed metal, then removed to leave a metallic pattern. Alternatively, metal can be plated into the exposed areas of the photoresist followed by removal of the photoresist and flash etching to leave behind a metallic pattern. Thicknesses of the patterns are limited to the thickness of the original metallic layer, in the case of etching, and the thickness of the photoresist, in the case of metallic plating.
  • Current fabrication processes include, for example, permanent resists, generally known as photoimageable dielectrics (PID). It may desirable that such materials have low dielectric constants and low dielectric losses particularly when they are a permanent part of an electronic component and/or device. They are coated onto a substrate from either a liquid composition or by using a dry film, indiscriminately, coating the entire substrate. They can be used to photodefine structures wherein the PID can be cured to become a permanent part of the electronic and/or mechanical component and/or device. Adhesion promotion and catalyzation of the surfaces of the cured PID may allow for metal to be deposited onto the surfaces of the resist.
  • In some processes, a temporary photoresist may be metallized or the resist may serve as a mold for the metallization; this is followed by removal of the resist leaving behind a metal structure with air as the dielectric. In addition, many structures require more than one layer of dielectric material and/or conductive materials such as, for example, metal. To create devices that have substantial complexity, tens, hundreds, or even millions of layers may be required depending on the size, scale, and resolution desired. Furthermore, the use of PIDs to create such devices is very limiting. After a layer of PID is imaged to form a structure, a second layer, uniformly applied from either a liquid or a dry film, has difficulty planarizing or filling the spaces in the structure particularly if they are on the scale of the layer's thickness or greater. A further limitation is the inability to create structures of varying and specific desired thicknesses since the PID can only be applied as one uniform thickness when applied by these methods. Still a further limitation is the inability of the PID to allow for selective metallization. Adhesion promotion and catalyzation of the PID surfaces is non-selective so that every exposed surface will be metallized, rather than a select set of surfaces.
  • A still further limitation of the current techniques is the inability to create structures that differ substantially in size, functionality, and accuracy and also can provide the needed material diversity wherein the materials have both acceptable properties in comparison to other forming techniques currently known—for example finding a process that can provide the properties of metals, dielectrics, and some polymer materials that can be achieved through means such as thin film deposition, plating, sintering, and so on. Even without material diversity, the materials available in the 3D printing processes themselves often have compromised material properties compared to the material available in bulk or through other forming methods. This is particularly true when attempting to create multicomponent structures in the 3D printing process. For example, the properties of a 3D printed conductor or metallization may have unacceptably low electrical or thermal conductivity compared to a vacuum deposited or plated counterpart. For a dielectric such as a ceramic, or even a polymer composition, properties such as the dielectric constants, dielectric losses, and density may be unacceptably compromised. Thus, it may prove unacceptably challenging to obtain a suitable diversity of desirable materials, having a large enough set of desirable material properties, to create many functional devices that would be desired, for example, that which would desirably be associated with creating a 3D printed and fully functional version of many components populating an electronic and/or mechanical device. For instance, to create a circuit board, both a good electrical conductor and a good non conductor are required in a pattern. It may also be important in the final device that its metals or conductors are able to take a solder based device attachment; and that its adjacent non-conductors can withstand the temperatures associated with this process. Finding a 3D printing process that can provide metal properties found in plated metals and in the same process finding a dielectric that will both suitably adhere to said printed metal and have an acceptable decomposition temperature, chemical resistance, and other suitable dielectric properties can be difficult with the processes currently available in 3D printing.
  • The current processes are of little use when a substrate has components or other elements already fabricated onto or into the substrate particularly where the topology is substantially non-planar with respect to the layer thickness. Also, many substrates are sensitive to the solvents or heating steps that are required in fabrication. Alternative methods of preparing these devices with many components include molds and pick and place processes wherein the components are made “off-line” and are assembled later onto the electronic and/or mechanical device. Classic examples include capacitors and resistors, and inductors as well as magnetic components.
  • As can be seen, current methods for the fabrication of electronic and mechanical structures for manufacturing electronic and/or mechanical components and other objects are limiting. Thus, there is a need for devices and methods of fabrication that allow electronic and/or mechanical structures to be made with varying sizes, thicknesses, and materials as well as the ability to be preferentially metallized—including devices and methods that can be utilized in a non-destructive manner when substrates are already populated with devices.
  • SUMMARY OF THE INVENTION
  • In a first embodiment, the present application for patent discloses and claims a method of fabricating three dimensional electronic and/or mechanical structures by selectively depositing at least one dielectric material, which comprises a metallizable composition, using three dimensional printing methods and selectively depositing metal onto the metallizable dielectric material. The deposited dielectric material, which comprises a metallization composition, may further be made from a photoimageable composition and/or patterned using lithographic processes such as, for example, contact printing, projection printing, direct write printing, and/or other lithographic processes.
  • In a second embodiment, the present application for patent discloses and claims a method of fabricating three dimensional electronic and/or mechanical structures by selectively depositing at least one dielectric material, which comprises a metallization composition, using three dimensional printing methods and depositing at least one dielectric material which does not comprise a metallization composition and selectively depositing a metal onto the metallizable dielectric material.
  • In a third embodiment, the present application for patent discloses and claims a method of fabricating three dimensional electronic and/or mechanical structures as in either of the previous two embodiments but further comprising depositing a sacrificial material comprising a metallizable composition, selectively metallizing the sacrificial material and removing the sacrificial material. The sacrificial material may be comprised of a photoimageable material that can be lithographically imaged using lithographic processes such as, for example, contact printing, projection printing, direct write printing, and/or other lithographic processes. The removal of the sacrificial material may be performed by organic solvents, aqueous solvents and/or thermal vaporization and optionally may include mechanical assistance such as, for example, ultrasonification.
  • In a further embodiment, the present application for patent discloses and claims a method of fabricating three dimensional electronic and/or mechanical structures by selectively depositing one dielectric material using three dimensional printing methods, selectively depositing a second dielectric material using three dimensional printing methods, selectively catalyzing one of the dielectric materials with a plating catalyst and selectively depositing metal onto the catalyzed dielectric materials. Either, or both, of the dielectric materials may be photoimageable and can be imaged using lithographic processes such as, for example, contact printing, projection printing, direct write printing, and/or other lithographic processes.
  • In a further embodiment, the present application for patent discloses and claims a method of fabricating three dimensional electronic and/or mechanical structures of the immediately above embodiment, but further comprising depositing a sacrificial material comprising a metallizable composition, selectively metallizing the sacrificial material, and removing the sacrificial material. The sacrificial material may be comprised of a photoimageable material and can be imaged using lithographic processes such as, for example, contact printing, projection printing, direct write printing, and/or other lithographic processes. The removal of the sacrificial material may be performed by organic solvents, aqueous solvents and/or thermal vaporization and optionally may include mechanical assistance such as, for example, ultrasonification.
  • In still a further embodiment, all of the above embodiments are deposited in a selected plurality of layers to give a sequential build of electronic and/or mechanical structures, wherein the layers comprise one or more of a metal material, a sacrificial material, and a dielectric material thereby forming a structure above the substrate.
  • In the above embodiments, the three dimensional printing methods can be, for example, stereolithography, 2-photon stereolithography, inkjet, hot melt extrusion fabrication, and/or selective laser sintering.
  • All of these embodiments and their variants may have in common the use of a dielectric that is selectively metallizable in conjunction and relation with a second dielectric to form mixed metal-dielectric structures and metal-dielectric-void structures.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The foregoing summary and the following detailed description of the exemplary embodiments of the present invention may be further understood when read in conjunction with the appended drawings, in which:
  • FIGS. 1A-1G schematically illustrate exemplary processes, devices, and materials in accordance with the present invention exemplified by ink jet printing or other material dispenser as but one illustrative example of 3D-printing processes of the present invention;
  • FIG. 1A, schematically illustrates two different printing heads 10, 11 printing two different materials 12, 13 to provide first and second structures 14, 15 on a substrate 16;
  • FIG. 1B schematically illustrates the case where a metal 17 is further selectively deposited onto the second structure 15 of FIG. 1A;
  • FIG. 1C schematically illustrates inkjet printing of a second structure 25 in a manner similar to that of FIG. 1A but onto a metal layer 20 rather than directly onto the substrate;
  • FIG. 1D schematically illustrates the case where a metal 22 is further deposited onto the second structure 25 of FIG. 1C;
  • FIG. 1E schematically illustrates the case where the inkjet deposited material of the second structure 25 of FIG. 1D has been removed to leave a standalone metal structure 28;
  • FIGS. 1F and 1G schematically illustrate a method and resulting structure similar to that of FIGS. 1C-1D but having a sacrificial material 18 disposed on the second structure 25 preventing metallization at the location of the sacrificial material to provide a release hole to assist in the removal of the second structure 25 after metallization;
  • FIG. 2 schematically illustrates using hot melt extrusion fabrication as an illustrative example of 3D-printing processes, devices, and materials of the present invention, wherein a printing head 30 deposits material 33 onto substrate 35;
  • FIG. 3 schematically illustrates an exemplary process of stereolithography as an illustrative example of 3D-printing processes, devices, and materials of the present invention, in which a substrate 30 is placed in a bath 32 containing a liquid monomer 34 and an exposure device 36 exposes the monomer to curing radiation 38 to give cured structures 40 which steps may be repeated many times to create a 3D structure;
  • FIGS. 4-16 schematically illustrate cross-sectional views of an exemplary 3D printing process and structure in accordance with the present invention for the fabrication of a three dimensional, multilayered, coaxial cable;
  • FIGS. 17-29B schematically illustrate cross-sectional views of an exemplary 3D printing process and structure in accordance with the present invention for the fabrication of a three dimensional, multilayered, coaxial cable; and
  • FIG. 30 schematically illustrates an alternative support structure for use in the structure of FIG. 16.
  • DETAILED DESCRIPTION OF THE INVENTION
  • The present invention relates to processes and devices created, at least in part, utilizing three dimensional (3D) additive build manufacturing as a way to create 3D objects by going from a computer or digital design of the 3D object to the object itself from this digital information. In one of its aspects, the present invention relates to simple and complex electronic and/or mechanical structures and processes for their formation. In one notable aspect, the present invention relates to devices having conductive structures with tolerances and accuracy on the micron scale, such as microwave and waveguide circuits. In this regard, the present invention provides novel methods for creating such conductive structures via 3D additive build manufacturing while overcoming present difficulties in providing conductive structures of small dimension and high tolerance and having suitable bulk electrical and thermal conductivity properties made via 3D additive build manufacturing. In particular, the present invention may use selective metallization processes and materials in conjunction with non-conductive structure(s) provided by 3D additive build processes described below to provide micron scale accuracy conductive structures within a multi-structure and/or multi-component device environment, for example. As used herein, “selective metallization” connotes the ability for one material to take or bind to a metallization process or to a metallization catalyst with respect to a second material which does not so take or bind when both are exposed to the same metallization process. Thus, selective metallization permits selected structures to be metallized while other structures within the overall device/system architecture are not. A number of motivations for this selectivity have been discovered.
  • One motivation is that some of the highest accuracy and tolerance 3D printing methods such as stereolithography tend to be formed from light solidified monomers or polymers. Even if one used electrically conductive polymers however, they are not typically able to provide bulk conductivity of a dense metal such as silver or copper. While it is possible to coat most plastic surfaces with a metal—for example by electroless plating—it is not possible to use current techniques with precision to choose where metal will and will not be coated except in the case of a planar and smooth exterior of sufficient dimensions, for example with additional masking. Thus, in accordance with the present invention the desirability of having a deposited material with near bulk-conductivity grow and adhere where desired, or through other means such as later stage thermal processing, is recognized.
  • Turning to the different technologies available for performing additive manufacturing or 3D printing, 3D additive build manufacturing has come to include additive manufacturing methods such as Selective Laser Sintering (SLS), and StereoLithography (SLA), and micro-stereolithography. Other additive manufacturing methods include Laminated Object Manufacturing (LOM), Fused Deposition Modeling (FDM), and MultiJet Modeling (MJM), and Inkjet. Areas of substantial overlap can exist between many of these methods, which can be chosen as needed based on the materials, tolerances, size, quantity, accuracy, cost structure, critical dimensions, and other parameters defined by the requirements of the object or objects to be made. In addition, 3D additive build manufacturing has come to be known by a variety of names, including 3D printing, for example. Thus, as used herein the terms “3D additive build manufacturing” and “3D printing” are used interchangeably.
  • Three dimensional (3D) printing is a form of additive fabrication or additive manufacturing technology wherein a 3D object is created by laying down or forming successive layers of material at precise positions. Thus inkjet, fused deposition, and multij et would all be forms of 3D printing. 3D printers have the ability to print structures made of several materials with different mechanical and/or physical properties in a single build process, and operate by taking a 3D computer file and constructing from it a series of cross-sections taken in the build direction. Each cross-section layer is then printed one on top of the other to create the 3D objects. (When the term “layer” is used herein, it means one or more levels or of potentially patterned strata and not necessarily a continuous plane.)
  • Alternatively, a 3D printer can create a 3D object from an extrusion of a liquid that is solidified by either a change in temperature or a chemical change, for example, such as melting or polymerization. Thus, while a layer-wise build may be used in some instances, a vector-based build where 3D motions both in and out of a plane are determined based on the part to be made, machine physics, material chemistry, and other manufacturing considerations can also be used. In plane rastering and out of plane motion of a “print head” supplying a material, or for the same “print head”, adjusting the 3D coordinates of a critical focal volume of light within a photosensitive liquid and (thereby converting it in that location to a solid “voxel”) are both methods where, through motion and repetition, a 3D object of some target physical dimensions, shape, and size can be formed.
  • A number of different technologies are available for performing 3D printing. Their main differences are in the way layers are built to create objects. Some methods use melting or reflow to produce the layers such as in “selective laser sintering” wherein one or more lasers selectively fuse particles from a bed of particles. After each cross-section is created, a new layer of powder is applied to the top and the processes repeated until a desired 3D structure is obtained. Depending on desired properties, each layer of powder may be the same, or a layer of different powder may be applied. Each powder layer may be uniform or the layer can be sectioned with differing materials, thus providing the capability of obtaining objects with differing characteristics and/or functionalities. This technique is also useful for producing fused plastic layers and/or plastic objects or metal layers and/or metal objects or ceramic layers and/or ceramic objects. For metallic structures, a bed of metallic powder is provided followed by exposure to a laser. For many functional objects in electronics and in mechanics, a combination of materials that include more than one of metal, ceramic, plastic, semiconductor, and others would be desirable. Thus it is desirable in such a process to control factors such as stress, shrinkage, CTE, material cohesion and inter-material interface adhesion in constructing or building such a 3D device of highly heterogeneous material types.
  • Another method in additive manufacturing through 3D printing is “hot melt extrusion fabrication” wherein materials, supplied as pellets and/or a filament may be liquefied and deposited by one or more extrusion heads. The pellets and/or filaments may be the same or different and may be melted and mixed prior to or during extrusion.
  • Other methods include application of liquid materials that are cured with different technologies, including inkjet printing. In the case of 3D structures, the “inkjet” may deposit layers, for example, from a micron to tens of microns or more in thickness in each layer. The layer may be cured as the process proceeds, for example, by drying. Alternatively, in one part, inkjet printing layers can be applied and cured one layer at a time. One or more printing heads, using similar or different materials, can be used to build structures on a substrate. Another inkjet printing technique is to inkjet a binder onto a bed of powder to bind the powder into a solid layer. The process continues until the desired 3D object is obtained.
  • Another method of additive manufacturing using liquid materials is stereolithography wherein a vat or layer of liquid polymer is exposed to a light. The exposed regions of liquid polymer harden into solid layers. The substrate upon which the solid layer region was fabricated is then moved down in small increments and the liquid polymer is again exposed to light. The process repeats until the model is built. The liquid polymer is then drained from the vat, leaving the solid model. This method also allows for replacing the liquid polymer with a different liquid polymer at various stages during the building process, thus allowing for the use of different materials for different applications and with different properties.
  • Other techniques include 2-photon stereolithography in which a 3D structure is obtained using one focused laser to create a 3D gel. This is followed by a second laser that cures the desired sections of the gel into a solid, with the uncured gel being washed away.
  • Materials useful for the 3D fabrication of electronic and/or mechanical structures, include, but are not limited to, dielectric materials, for example, ABS, polyacrylates, BCB, polyimides, polyamides, polyurethanes, polyesters, polycarbonates, polysulfones, polysilicon materials and other materials known in the art to be useful as dielectric for fabrication of electronic and/or mechanical structures. While polymers may be most easily deposited materials using current 3D printing techniques, semiconductors, ceramics, and metals are typically found in electronic components. Selective laser sintering is one of the only additive manufacturing techniques that currently provides near bulk density metals, however its accuracy and resolution are low compared to jet deposited or extrusion deposited 3D printers. These materials however can be 3D printed as a mixture such as a nanomaterial paste or composition in a binder. 3D printing techniques that have a direct thermal component such as laser sintering can often provide a final structural material; however, other approaches such as baking the final printed structure to remove binders and certain polymer components could be equally used to obtain the final desired material properties. For instance, a polymer could be heat treated to remove solvent and leave behind a solid, or a polymer-ceramic composite could be heat treated to decompose the polymer and leave behind a ceramic. The materials may be used alone or may be formulated into inkjet compositions, or as meltable solids for hot melt extrusion application, or as monomeric, polymeric, or mixtures of materials for stereo-lithographic applications.
  • Other useful materials may be applied by additive manufacturing or 3D printing processes and further processed in a curing step, for example, epoxy, novolac, melamine, glycidyl ethers of poly-bis-phenol A, or combinations thereof, and other crosslinking systems which require a thermal cure, a photo cure or a combination thereof. In some of these materials, one or more curing catalysts aid in the curing step, for example, photoacid generators, thermal acid generators, photobase generators and/or thermal base generators. Depending on the desired properties the materials for 3D printing may be combined into one or more useful printing compositions.
  • In some embodiments, the compositions for 3D printing or additive manufacturing comprise a “metallizable composition”. These compositions may contain or may selectively bind to metallization catalysts, which allow for the deposition of metal using wet chemical processes or gas phase processes. Metallization catalysts include, for example, palladium-tin alloys which are activated to palladium catalyst during processing. Other catalysts include organic palladium materials which may be activated to palladium catalyst by thermal or chemical or plasma treatment. In some cases, a metallization precursor may be included in the dielectric being deposited. In some cases a material is chosen that can readily adsorb or absorb or bind to a catalyst from a solution in relation to a second material that does not absorb or adsorb or bind to the catalyst. In this embodiment, the material is deposited, the material may optionally be etched and may be optionally exposed to an additional step to concentrate the catalyst such as a plasma etching step that selectively removes a small amount of the polymer or binder material and leaves the catalyst. Further processing needed to activate a catalyst such as a palladium chloride composition, like exposure to a reducing agent, is known in the art. The material can then be plated.
  • In other embodiments, the printing compositions may comprise photoimageable materials. For example, a photodefinable dielectric material, for example, glycidyl ethers of poly-bis-phenol A/photoacid generator systems, can be applied by 3D methods followed by further processing using photolithographic techniques such as, for example, exposing the material to actinic radiation through a photomask and removing any unexposed material using a suitable developer solution. This method could allow a two-fold patterning process, the first being the pattern provided by the 3D deposition, the second being a photolithographic process, and may provide more versatility in manufacturing a 3D structure. Other photolithographic materials may also be used for example, acrylate systems, BCB systems, silicon based systems and/or novolac systems.
  • Using, for example, electroless metallization processes known in the art, metal may selectively be deposited, for example, copper, nickel, gold, tin, zinc, silver, palladium, tin, lead, aluminum, chromium and/or alloys. In some embodiments, the composition containing the metallization catalyst has its surface etched back to remove some of the non-catalytic dielectric material, thereby increasing the number of catalyst sites in the surface of the composition potentially allowing for improved plating. For example, etching steps to concentrate catalysts on a surface of the metallizable plastic may include plasma processes such as, for example, plasma etching in the presence of oxygen or may include wet chemical etching.
  • Other dielectric materials not containing metal catalysts may be deposited along with catalyzed dielectrics. These can be deposited at the same time when using inkjet or hot melt extrusion printing by employing more than one printing head and/or sequentially such as, for example, with stereolithography where in one material is deposited from a liquid composition, the composition flushed and replaced by a second liquid composition which is then deposited. This allows for selective metallization wherein selected structures are metallized while other structures are not.
  • To date, entire 3D printed plastic models have been metalized using plating on plastic techniques such as electroless plating and/or electroless plating followed by electrolytic plating; however, methods to selectively enable the formation of metalized regions along with non-metalized regions wherein the regions that become metal are defined by the materials deposited have not been demonstrated. This is in contrast with a patterned metallization in which an additional masking material such a resist or paint is applied to the object to create a metal pattern. In other embodiments, two dielectric compositions may be deposited onto a substrate using 3D printing methods, wherein only one of the dielectric compositions can be catalyzed with a plating catalyst and subsequently plated and the other does not take to or have the catalyst incorporated and so does not plate in the same metallization process. One way this can be achieved when one of the dielectric compositions has surface characteristics that allow a plating catalyst to adhere to it, while the other dielectric composition does not allow the catalyst to adhere. Examples of such adherent surfaces include surfaces with, for example, carboxylic acid, hydroxy and/or other highly polar groups on the surface and/or the surface may be porous allowing catalyst to be captured in the pores.
  • Alternatively, one of the dielectric compositions may be treated with conventional plating on plastic processes, for example, slight swelling and etching of the dielectric followed by contact with a catalyst bath where the catalyst becomes adherent to the dielectric. The treated dielectric then is plated in a plating bath. The other deposited dielectric is selected such that it is not affected by the catalyzing and therefore the plating processes. Plating of the selected dielectric may be performed for example by electroless plating processes and/or by a combination of electroless plating followed by electrolytic plating, for example. In the above plating processes, it can be seen that the embodiments of the current disclosure provide for select plating and non-plating of the deposited 3D structure.
  • The selective metallization may also occur by a gas or vapor phase reaction, for example in atomic layer deposition (ALD), a polar material may allow a series of gas phase reactions that metalize a surface were as a non-polar material may not start a reaction.
  • In addition to 3D printing or additive manufacturing of permanent dielectric materials, metallizable or otherwise, the present invention includes the 3D printing of sacrificial materials along with one or more of the metallizable dielectric and the non-metallizable dielectric. For example, the 3D printed materials may be used to provide both a sacrificial scaffolding, for example, a starch, and a permanent material, for example, ABS. In this case, the final object is obtained when the sacrificial scaffolding is dissolved or otherwise removed. While parts entirely made of dielectric materials are useful in certain applications, other products, especially electronic and/or mechanical structures, benefit from having a mixture of metal and dielectrics available which may be combined with nearly arbitrary complexity, particularly when combined with a sacrificial material that can provide a space or void where desired.
  • Thus typically three materials may be used, a sacrificial scaffolding material that can be dissolved after printing, and two materials one selectively metallizable in reference to the second, which remain intact during the process which removes the sacrificial scaffolding material. Subsequently, the metallizable material may be metallized during a metallization step, after which the selectively metallized material may optionally be removed in a second removal step. If the material is optionally removed, it may be desirable to ensure the metal is deposited to a thickness such that it can be free-standing. In some cases it may be desirable to have a dielectric, a metal, and a void structured in arbitrary and determined complexity in the final structure. Merely coating a dielectric, such as a selectively metallizable plastic, with a metal coating may not be desirable. A metal encapsulated dielectric may for example fail under temperature cycles due to a mismatch between the metal and dielectric properties, and therefore one may prefer to remove the metallized dielectric from the metal coating, similar to the removal of sacrificial materials that can serve as scaffolding. Thus one may choose 3 or 4 materials to realize such a device: a selectively metallizable dielectric, a second dielectric that does not become metallized in the same process, the metal that becomes coated on the metallizable dielectric, and optionally a scaffolding material. Typically, the scaffolding material is removed, then metal is deposited selectively on one of the two dielectric materials, and then the metallized dielectric material may also be optionally removed by a final removal process, leaving a desired metal, air, dielectric structure.
  • Materials suitable as sacrificial materials can be printed using 3D techniques. Such materials are platable using the techniques described above, that is, they contain plating catalysts and/or can be swell/etched/catalyzed, and/or can be readily removed to leave behind a full or partial metallic structural element. Such materials include, for example, polyacrylates, polycarbonates, cellulosic materials, and other materials capable of being removed by a remover. Removers include organic solvents, for example, glycol ethers, glycol ether acetates, alcohols, esters, ethers, ketones, halogenated solvents, DMF, DMSO and the like; aqueous solvents such as acids and bases ranging in pH from about 0 to about 13 with or without surfactants and/or emulsifiers; and/or thermal vaporization, and/or combinations thereof. The sacrificial materials may dissolve, emulsify, particulate, depolymerize, and/or become gaseous. Additionally, mechanical assistance, for example ultrasonification, may also be used. The selectivity of the removers and the removal process require that the dielectric materials are not affected during the removal process.
  • The current application also discloses depositing metalizable dielectrics, non-metalizable dielectric materials and sacrificial materials in a plurality of layers. The versatility of 3D printing allows a deposition of a variety of sequences of layers based on the electronic and/or mechanical structural requirements. For example, 3D-MERFS and PolyStrata®-like devices can be prepared by the disclosed methods. See U.S. Pat. No. 7,012,489, U.S. Pat. No. 7,649,432, U.S. Pat. No. 7,948,335, U.S. Pat. No. 7,148,772, U.S. Pat. No. 7,405,638, U.S. Pat. No. 7,656,256, U.S. Pat. No. 7,755,174, U.S. Pat. No. 7,898,356, U.S. Pat. No. 8,031,037, US 2008/0199656 and US2011/0123783, 2010/0296252, 2011/0273241, 2011/0181376, 2011/0210807 for examples of devices that can be prepared using the currently disclosed methods, the contents of which patents and published applications are incorporated herein by reference.
  • In some embodiments, materials can be mixed in a reservoir prior to the printing of the material. This is particularly useful for materials that are highly reactive so that two materials may start to react with each other as they are being printed. In this manner, viscosity can build up quickly to help form a solid layer when the layer is applied.
  • Two printing devices may work in concert with each other so that two parts of highly reactive materials can be printed simultaneously and begin reacting immediately, such as, for example, an epoxy novolac layer is printed from one printing device and an acid is printed by a second printing device directly onto the epoxy novolac layer. As soon as the acid comes into contact with the epoxy, a crosslinking reaction occurs.
  • In other processes, some layers can be cured by heat and/or light, so that some of the printing heads can be replaced by or used in conjunction with heating elements and/or light emitting elements which may be applied to a layer which has been deposited. In this manner, the layers may be selectively cured or allowed to remain uncured, suitable for further processing.
  • The electronic and/or mechanical structure may be deposited on a variety of different surfaces since the process is not dependent on coating processes that are typically required. Thus, a planar or nonplanar surface may be used to deposit the layers. Surfaces which are partially or fully populated with electronic devices and/or components may also be used and fabrication can take place on these surfaces, which is difficult to achieve with current conventional methods.
  • The method for building electronic and/or mechanical structures may include depositing materials using conventional deposition processes, including, for example, spin coating, lamination, dip coating, curtain coating, slot coating, spray coating, off-set coating and the like. It may be desirable to planarize the structures after every layer or periodically, or provide selective removal steps during the processing of one or more layers. To that end, other conventional processes may also be included, for example, chemical-mechanical-polishing, lapping, mechanical machining, diamond turning or other precision turning, milling, grinding, plasma etching, laser ablation, and/or combinations thereof.
  • The 3D printing process can provide structures of different shapes and/or different heights, as well as structures that have cavities and/or walls into which discrete components may be placed later during manufacturing.
  • The current application for patent is not restricted to size such that objects from microns to meters can be fabricated using these methods and is primarily only limited by the resolution capabilities of the print head or the scale of the printer. Additionally, the substrate used for deposition may function only as a support onto which the objects, and all its embodiments, are printed, such that the substrate may later be removed providing a stand-alone object with selectively metallized portions on the object.
  • Turning now to FIG. 1A, as an illustrative example of 3D-printing processes of the present invention, printing heads 10, 11 are provided which may deposit droplets of first and second materials 12, 13 to form first and second layered structures 14, 15 on a substrate 16. As used herein, the term “droplets” may refer to liquids, solids, e.g., powders or nanoparticles, or combinations thereof, such as a suspension or slurry, for example. “Droplets” may be of a volume of picoliters to milliliters depending on the dimensional size, tolerances, and complexity of the device being fabricated. The first and second materials 12, 13 may have the same or different composition, and the printing heads 10, 11 may be the same or different, depositing different sizes and/or shapes of droplets as desired. Although FIG. 1A illustrates two printing heads 10, 11, more than two printing heads may be used, each of which may deposit materials simultaneously and/or sequentially. In addition, a single printing head 10 may be used to deposit each of the first and second materials 12, 13. The printing heads 10, 11 and the substrate 16 are typically moved relative to one another using linear motors, gantry robotic systems, SCARA robotic systems, electrostatic deflection of the particles, raster scan printing motion, or other relevant techniques, for example.
  • The printing heads 10, 11 may deposit layer upon layer until a desired thickness of structure is obtained. In some processes, the printing heads 10, 11 may provide multiple materials by switching from one material to another during the process, and differing ones of the multiple materials may be printed over each other to provide complex patterns. When layers are printed over each other, openings may be left in the layers to allow solution flow into and out of the structure formed of the layers.
  • The substrate 16 may comprise any surface useful in forming an electronic and/or mechanical device including, for example, silicon materials, ceramic materials, glass materials, metal materials, integrated circuit containing semiconductor materials, circuit board materials, RFID substrates and the like. It may for example be a SiGe or InP wafer containing integrated circuits. The substrate 16 may be flat or, because of the versatility of the process, may be populated with components and/or structures that are already resident on the substrate 16. The substrate 16 may be a permanent part of the end product or it may be a temporary platform on which the structures are grown and/or removed and/or detached using, for example, a sacrificial layer.
  • FIG. 1B illustrates the selective metallization of the second layered structure 15 with a metal coating 17, which can be achieved by electroless plating techniques, electrolytic techniques and/or direct plating, for example. In some applications, one or more of the materials 12, 13 may contain conductive polymers such as, for example, polythiophene, polypyrrole and/or polyaniline. Conductive materials may also include, for example, graphene, carbon, nanocarbon constructions and/or other materials, including non-metals, which may be useful as electroplating conductors.
  • Alternatively or additionally, one of the materials, e.g., material 13, may contain plating catalysts. The catalysts may include one or more of palladium/tin colloid and/or their chloride salts, for example. After the printing process is complete (e.g., FIG. 1A), the substrate 16 containing layered structures 14, 15 may be immersed in a commercial activating solution which for example reduces a tin salt or palladium salt to elemental palladium and/or tin in the optionally catalyst-containing second material 13. The substrate 16 may then be immersed in a commercial electroless plating bath and operated to obtain a desired metal thickness. In some embodiments, it may be advantageous to etch the surfaces of the catalyst-containing second material 13, allowing more of the catalyst to be on the surface for contact and reaction with the electroless plating materials. Etching can be performed in liquid baths such as, for example, strong alkali materials which have some sensitivity to strong alkali, or the materials may be plasma etched for example in an oxygen containing plasma as described above.
  • Turning to a further exemplary structure and method of the present invention, FIG. 1C illustrates a process similar to that of FIG. 1A in which printing heads 10, 11 deposit droplets of first and second materials 12, 13 to form first and second layered structures 24, 25 on a substrate 26; however, a metal layer 20 is provided on the substrate 26 at the location in which the second structure 25 is to be deposited. A metal 22 may be further deposited to the exposed surfaces of the second structure 25, in a similar manner described above with regard to the metal 17 of FIG. 1B, allowing the second structure 25 to be completely surrounded by metal 22, FIG. 1D. Subsequently, the second deposited material 13 comprising the second structure 25 may be removed to leave a stand-alone, 3D metal structure 28, FIG. 1E. As described above, the deposited second material 13 may be removed by one or more of dissolution, thermal vaporization, polymer deconstruction, and other suitable methods. The dissolution of the second structure 25 may be enhanced by printing an additional sacrificial material 18 over a portion of the second structure 25 so that a selected region of the second structure 25 is not metallized to form a “release hole”, FIGS. 1F, 1G. This additional sacrificial material 18 may be stripped selectively revealing an unmetallized region of the second structure 25 which may then be dissolved and/or otherwise removed from the metal shell 29. The additional sacrificial material 18 may be the same or different from a sacrificial material 25 and/or may be a thin layer of a dielectric that selectively does not metallize under the conditions of second structure 25. The next step from FIG. 1G then would be for it to look similar to FIG. 1E if the option to remove the materials of 18 and 25 is chosen.
  • As mentioned, materials which are suitable for depositing can range from dielectric materials such as, for example, polyimides, polysulphones, polysilanes, and the like, as well as polyacrylates. Depending on the desired structure of the fabricated electronic and/or mechanical device, temporary materials may also be used such as, for example, waxes, solvent soluble materials and/or aqueous solution soluble materials. These materials can be important when the final fabricated device has air gaps or voids as shown in FIG. 1E.
  • FIG. 2 illustrates another exemplary process for depositing materials for electronic and/or mechanical structures using hot melt extrusion fabrication techniques wherein a printing head 37 deposits material 33 onto substrate 35. As with the inkjet printing technique discussed above, there may be more than one printing head depositing more than one material at the same time or at different times. The material that feeds into the printing head may be changed during the process to allow deposition of different materials from the same printing head. Alternatively or additionally, multiple print heads containing different materials may be used in sequence or in parallel. In this process, materials are pre-heated, and/or may be premixed with other materials prior to deposition.
  • FIG. 3 illustrates stereolithography as a further exemplary process for creation of 3D structures of the present invention. A substrate 30 is placed in a bath 32 containing a curable material, such as a liquid monomer or liquid polymer 34. An exposure device 36 exposes the monomer to curing radiation 38, which may be, for example, ultraviolet radiation to provide a cured layer pattern 40 at selected locations on the substrate 30. After the layer pattern 40 is deposited, the substrate 30 may be submerged further into the bath 32 to a chosen level, and a new liquid layer cured on top of the substrate 30 and/or portions of the existing layer pattern 40. The exposure may be repeated with each new layer adhering to previous layers 40, and the substrate 30 again submerged further into the bath 32. The process may continue until the desired 3D structure is created. The liquid monomer 34 may be drained and replaced with a different material during the process allowing for the use of more than one type of material for the building of the structure. Additionally, there may be more than one exposure unit 36 exposing the liquid monomer 34 at the same or different times.
  • Turning now to FIGS. 4-16, an exemplary process of the present invention is illustrated using an inkjet process as an example of a 3D additive build process of the present invention in the fabrication of a three dimensional, multilayered, coax cable 78, FIG. 16. It is to be understood that other suitable 3D manufacturing techniques may also be used instead or in combination, but inkjet printing has been shown merely for purposes of illustration and not limitation.
  • A substrate 50 is provided having the bottom metallic wall 52 of the coaxial waveguide conductor cable 78 disposed thereon, FIG. 4. A sacrificial material 54 a, 54 b may be deposited by 3D inkjet printing 56, or other suitable 3D additive build process, in a desired pattern to define a location 53 of a lower portion of the coax sidewall 68 (cf. FIG. 16) and a pocket 55 for additional desired structure(s) and/or devices, such as a non-conductive support post for a central conductor 69 of the coax cable 78, FIG. 5. A passivation layer 58 may then be deposited in the pocket 55, FIG. 6 . The passivation layer 58 may be non-conductive and prevent metal plating on the passivation layer 58. Metal plating, or other suitable metallization processes, may next be performed to fill the location 53 with metal to provide a lower sidewall portion 60 a disposed in continuity with the bottom metallic wall 52, FIG. 7. Again, planarization techniques may be included here to planarize the uppers surfaces 61 to remove excess metal which might be deposited due to overplating. Planarization in this and/or any of the steps requiring planarization may be achieved by one or more of CMP, lapping, polishing, grinding, diamond turning, lathe turning, milling, and the like. This may optionally be done instead after the next step for the support post, or may optionally be done at any step if and as needed.
  • A support post 62 may be deposited by inkjet printing a non-conductive material 63, such as any of the above mentioned dielectric materials, over the passivation layer 58 to provide support for the central conductor 69 of the coax cable 78, FIG. 8A. Planarization may optionally be used at this stage to provide a level surface, although adjustments may be made in the printing process to allow for any over deposition. While deposition of passivation layer 58 and support post 62 are shown here as comprising two separate materials and steps, the passivation layer 58 and support post 62 may comprise the same material, such as a non-metallizable material, and may be formed in one deposition or forming step.
  • Optionally, while material 62 in FIG. 8A is shown as a support post material being deposited on the non-conductive layer 58, an object 65 may be inserted instead in the pocket or recess area 55, FIG. 8B, to realize devices other than the coax example illustrated in FIGS. 4-16. For example, the object 65 may include one or more of a chip (integrated circuit), a magnet, and a ferrite and could be inserted in the pocket 55. For example, a material or device that is not compatible with the utilized 3D additive build process, e.g., due to chemical or thermal requirements, or a device that needs more or less processing than the 3D additive build process allows could be inserted. The object 65 could be bonded to the passivation layer 58 and/or the bottom metallic wall 52 under the passivation layer 58 by one or more means such as, for example, a conductive or non-conductive adhesive, or the object 65 could be mechanically locked in place by subsequent deposition steps. Any suitable means such a pick and place, manual insertion, or self-assembly in a fluid using electrostatic attraction could be used to incorporate the device/object 65.
  • Resuming the coaxial build example, sacrificial material 64 a, 64 b may be deposited by 3D inkjet printing, or other suitable 3D additive build process, to define a location 66 a of an intermediate portion of the coax sidewall 68 and a location 66 b of the central conductor 69, FIGS. 9, 16. Since the support post 62 is non-conductive, a seed layer 67 that allows plating to occur on the support post 62, such as a metallization catalyst, or conductive thin film, may be deposited by inkjet printing, FIG. 10. Metal plating, or other suitable metallization process, may next be performed to fill the location 66 b with metal to provide a center conductor 69, and to fill location 66 a with metal to provide an intermediate sidewall portion 60 b disposed in continuity with the lower sidewall portion 60 a, FIG. 11.
  • Sacrificial material 70 a, 70 b defining the location 71 a of a top portion of the sidewall 68 and a location 71 b of a top layer of the outer conductor 79 of the coax cable 78 is now deposited, FIGS. 12, 16. Note that, due to the versatility of the 3D additive build processes of the present invention, the thickness of 70 a may be than then thickness of 70 b so that plating of the top layers of the sidewall 68 and a top layer of the outer conductor 79 can occur concurrently.
  • Dissolution plugs 72 may optionally be deposited via inkjet printing at selected location(s) on the surface of the sacrificial material 70 b, FIG. 13. The plugs 72 may be composed of material that does not plate with metal and can be removed at a later time to reveal holes in the top of the complete coax cable 78 allowing a passageway for the sacrificial material 54 b, 64 b, 70 b to pass during a removal process. A seed layer 74 may be deposited on the sacrificial material 70 b allowing the top layer of the sacrificial material 70 b to be plated in all the areas except where the dissolution plugs 72 are located, FIG. 14. Plating may then be performed to provide the top of the sidewall 60 c and the top layer 76 of the coax cable 78, FIG. 15. Subsequently, the sacrificial dissolution plugs 72 and the sacrificial material 54 a, 54 b, 64 a, 64 b, 70 a, 70 b may be removed using suitable dissolution methods, such as those described herein, to provide for a coax cable 78, FIG. 16. The dissolution plugs 72 may be provided at any suitable location, including for example, in the sacrificial material 54 a, 64 a, 70 a. The holes provided by the dissolution plugs 72 may be in locations and of a size and shape to minimize disruption of the desired electrical properties.
  • It should be noted that all the coating steps in this exemplary process were 3D additive build processes. Moreover, while plating was used as a method to obtain near bulk metallic properties in the 3D build, one or more of the plating steps could be replaced by a 3D printing step if suitable material properties needed can be obtained. Alternatively or additionally, as illustrated in the following example, conductive structures may be provided via metallization of selected non-conducting structures to yield solid or hollow structures having conductive surfaces as an alternative to structures with bulk electrical and/or thermal conductivity.
  • Turning to FIGS. 17-29B, a further example of a 3D additive build process of the present invention for creating a 3D coaxial structure with a primarily air dielectric is illustrated. A 3D deposition device 84 may deposit a first material 82 on a substrate 80 to provide a first layer 82 a, FIG. 17. The deposition device 84 may be any device which can implement any suitable 3D additive build process, such as solid polymer printing, stereolithography, and/or similar method. Alternatively, the deposition device 84 may schematically represent the deposition and patterning process for a laminated plastic film and/or patterning process for a spin coated photoresist. In this example, the first material 82 may comprise a selectively metallizable polymer, plastic, and/or dielectric material and may be deposited in a thickness on the order of microns to centimeters depending on the scale of the object being created. A second layer 82 b of the first material 82 may be deposited at selected location(s) on the first layer 82 a, FIG. 18. A second material 90 may be deposited at selected location(s) on the first layer 82 a through a deposition device 88 which may be the same or different from the deposition device 84. The second material 90 may be provide a support post 90 a at a location and also create voids 91 between the support post 90 a and second layer 82 b. The second material 90 may be desirably chosen to be different from the material 82 of the first layer 82 a so that the first layer 82 a can be selectively metallized by a suitable metallization process, while the support post 90 a is not metallized. Materials that are selectively metalizable, such as first material 82, can contain catalysts or other active sites that attract metal materials and compositions in their bulk or specifically on their surface. For example, the first material 82 may comprise a catalyzed form of the second material 90, where the catalyst renders the first material 82 metallizable. Additionally or alternatively, differences in physical properties, such as surface roughness, may be utilized to render a material selectively metallizable. For example, by surface roughness or surface porosity material 90 may not have a catalyst adhere in the same process in which is does adhere to the materials of 82 a and 82 b. Thus, by choice or engineering design of first and second materials and metallization process, the first and second layers 82 a, 82 b, having the metallizable compositions, may be selectively metallizable in comparison to the support post 90 a.
  • A sacrificial scaffolding material 94 may be deposited through a deposition device 92, which may be the same or different than the deposition devices 84, 88, to selectively fill one or more of the voids 91 to provide a scaffolding 94 a for subsequent structures or layers that may need to be suspended during the 3D additive build process. The use of a sacrificial scaffolding material 94 may be predicated on the need to suspend structures or to provide structures with a void region below them and may be used to support materials deposited with deposition devices 84, 88. The scaffolding 94 a may be removed in a subsequent step. It should be clear to one skilled in the art of 3D microfabrication that the scaffolding 94 a may not be required if, for example, a stereolithography or similar process is used where a liquid resin serves a similar function, e.g., where selective polymerization above a liquid layer may form features suspended by the unpolymerized liquid. In addition, other means to produce a suspended feature may be used, for example, the use of a rapidly solidifying material and forces such as cohesion or surface tension may be used in a 3D additive build system to create a suspended material without the need for a scaffolding material. In such examples, a similar build process can be used without the use of a scaffolding 94 a.
  • Returning to the build process, the deposition device 84 may next deposit a third layer of material 82 comprising structures 82 d, 82 c disposed over the support post 90 a and the second layer 82 b, respectively, FIG. 21. Additional sacrificial material 94 may be deposited through deposition device 92 over the scaffolding 94 a in the voids between structures 82 d, 82 c to provide additional scaffolding 94 b that may be subsequently removed, FIG. 22. The deposition device 84 may then deposit a fourth layer 82 e, which may comprise the same as materials of layers 82 a-82 d, over the structure 82 c, FIG. 23, and additional sacrificial material 94 may be deposited through means 92 over structures 82 d and scaffolding 94 b to provide additional scaffolding 94 c, FIG. 24.
  • An upper structure 82 f comprising the same material as the first layer 82 a may be deposited through device 84 over the fourth layer 82 e and additional scaffolding 94 c, FIG. 25. The scaffolding 94 a-94 c may be selectively removed to provide a resulting coaxial-shaped structure 200 having a void 106 (air dielectric) therein, FIG. 26. As described earlier, the scaffolding 94 a-94 c may be dissolved through one or more of a solvent removal step, a thermal sublimation step, and a vapor removal process. For example, if layers 82 a-82 f and support post 90 a were a catalyzed and a non-catalyzed ABS plastic, respectively, then the scaffolding 94 a-94 c may comprise a starch and removal may occur, for example, in hot water with ultrasonic agitation.
  • At this stage in the process the coaxial structure 200 may be nonconducting in view of the choice of materials 82, 90 utilized in the 3D additive build process, with layers 82 a-82 f collectively providing a metallizable core 202 for use as an outer conductor and layer 82 d a metallizable core for use as an inner conductor, FIG. 26. A metallization process, may thus be performed to metallize those structures comprising the first material 82 (i.e., layers 82 a-82 f) while the support post 90 a remains unmetallized, FIGS. 27A, 27B. Again, the first material 82 is selectively metallized relative to the support post material 90 due to compositional and/or surface physical differences, for example, between the first and second materials 82, 90, leading to a difference in the reaction of such materials 82, 90 to the particular metallization process utilized, i.e., selective metallization between materials 82, 90. (In other embodiments, the majority of the device may comprise a non-metallizable material, and any mixture and number of layers of metallizable material, non-metallizable material and voids may be produced with the present exemplary process.) FIGS. 27A, 27B schematically illustrate end-on and side cross-sectional views, respectively, of the coaxial structure 200 after the selective metallization, such as exposure to a metallization sequence involving an electroless copper or electroless silver or electroless gold coating process. As a result, a metallized inner conductor 97 is provided by the metal coating 97 a disposed over layer 82 d, and a metallized outer conductor 110 is provided by the metal coatings 110 a, 110 b disposed over the exterior and interior surfaces of layers 82 a-82 c, 82 e, 82 f, respectively. The inner conductor 97, having its core 82 d formed, for example, as part of the process illustrated in FIG. 21, is electrically discontinuous from the outer conductor 110 due to non-metallized support post 90 a formed in the steps illustrated in FIG. 20. As illustrated in FIG. 27B, the coaxial inner conductor 97 may extend upward to a top surface (on the left side) and exit at a port in the plane of the center conductor 97 (at the right side).
  • The metal coatings 97 a, 110 a, 110 b may be submicron or may be several, 10's, 100's, or 1000's of microns thick depending on the scale of the structure formed and may be formed through means known in the arts of electroless and/or electrolytic plating as well as in electroforming. The coatings 97 a, 110 a, 110 b may comprise more than one layer of metal, for example, of a layer of nickel and a layer of gold. Due to the RF skin depth, a thickness of several microns or less is capable of providing a low loss transmission line at frequencies above one or more GHz. It is noted that in some embodiments, a triaxial transmission line could also be formed in a similar sequence by making the coatings 110 a, 110 b formed on the inner and outer surfaces of the core 202 discontinuous and using a conductive substrate, for example.
  • In addition, during the sequential build multiple support posts 90 a may be deposited at the step illustrated in FIG. 19. Such support posts 90 a can take forms including blocks, stubs, straps, sheets, rods and the like. While a simple transmission line section is illustrated, it should be clear that complex 3D multilayer networks of coax and waveguide components can be made by the exemplary 3D additive build process. While an inner conductor 97 is shown in this example of coax, by omitting the inner conductor 97, hollow core waveguides can equally be created in the same process. In addition, integration of DC bias and control lines, chip mounting regions, connectors and connector flanges, and elements of the device or system housing itself can be formed by 3D additive build processes.
  • For example, the exemplary 3D additive build process may be altered beginning at the step of FIG. 19 by omitting the support post 90 a and filling the voids 91 and region that had been occupied by the support post 90 a with a sacrificial material to provide a scaffold 94 d, FIG. 28. Subsequently, a support bar 102 may be deposited over portions of the second layer 82 b and scaffold 94 d. The support bar 102 may comprise metallizable portion 102 b and non-metallizable portions 102 a, 102 c. Differentiation between metallizable portion 102 b and non-metallizable portions 102 a, 102 c may be provided as a bulk property of the support bar 102, such as by providing a catalyst or other appropriate material to the metallizable portion 102 b while the support bar 102 is being deposited. Alternatively or additionally, the metallizable portion 102 b may be deposited as a separate material different in composition from the non-metallizable portions 102 a, 102 c. Still further, the metallizable portion 102 b may be rendered metallizable as compared to the bulk properties of the support bar 102 by altering the surface properties, physical or chemical, of the support bar 102 at those locations. Processing may then continue to add additional layers and scaffolding materials as per the steps illustrated in FIGS. 21-26 followed by metallization as discussed above in connection with FIGS. 27A-27B to yield the coaxial structure illustrated in FIGS. 29A, 29B. Here, the support bar(s) 102 supports the inner conductor 97 providing the support function previously provided by support post 90 a by virtue of the ends of the support bars 102 being embedded in the outer conductor core at layer 82 c. Such a use of support bars 102 having metallizable portion 102 b, and non-metallizable portions 102 a, 102 c may be implemented in other structures, such as in lieu of the support post 62 present in the example of FIG. 16, as illustrated in FIG. 30.
  • Optional release holes may be provided in closed structures or those that have limited flow to facilitate removal of the scaffolding 94 a-94 c and/or to facilitate the required fluid flow for the metal coating steps. Such holes, for example, may be added to upper layer 82 f, or any layer, prior to metallization in locations and of a size to minimize disruption of the electrical properties desired, as per the use of dissolution plugs 72 as illustrated in FIGS. 1F, 1G, 13-15. The use of such release holes and their design and placement can be designed by one skilled in the art and may be assisted through software such as Ansoft's HFSS® for electromagnetic structures, Ansoft's Ansys® for mechanical or fluidic structures, and/or similar software products.
  • In addition, it should be clear that while a substrate 80 is used in the sequence illustrated in FIGS. 17-29B, structures could readily be released from the substrate 80, for example, by applying a sacrificial material, such as material 92, and/or by mechanically detaching the object from a platform, for example. Further, the selectively metallizable material 82 may remain in the final device; however, if the metal layers 90 a, 110 a, 110 b are sufficiently thick, the selectively metallizable material 82 may be removed after deposition of the metal, for example through one or more openings in the metal layers 90 a, 110 a, 110 b using methods which may leave the supports posts 90 a intact. Moreover, while an electronic application is illustrated by way of example, many other applications such as fluidic devices, mechanical devices, and the like can be created.
  • These and other advantages of the present invention will be apparent to those skilled in the art from the foregoing specification. For example, the build process outlined may contain more or fewer layers and more or fewer materials depending on the end device and/or structure being made. The build process could be stopped at any point and items or other materials maybe inserted into the partially complete structure and the build process then continued to embed and/or interconnect the inserted materials and/or devices. For example, passive or active electronic devices, magnets, powders, liquids and/or such may be put into cavities or receptacles and the build process continued to partially or fully interconnect or encapsulate them. Accordingly, it will be recognized by those skilled in the art that changes or modifications may be made to the above-described embodiments without departing from the broad inventive concepts of the invention. It should therefore be understood that this invention is not limited to the particular embodiments described herein, but is intended to include all changes and modifications that are within the scope and spirit of the invention as set forth in the claims.

Claims (25)

1-20. (canceled)
21. A method of fabricating a 3D structure, comprising:
providing a substrate having at least one integrated circuit disposed thereon;
depositing onto the substrate using 3D printing a first dielectric material to create a first patterned layer having at least one region in which the first dielectric material is deposited and at least one void region in which no first dielectric material is deposited;
depositing, on the first patterned layer, a second dielectric material to create a second patterned layer having at least one region in which the second dielectric material is deposited and at least one void region in which no second dielectric material is deposited; and
depositing a metal into selected portions of one or both of the at least one void regions of the first and second patterned layers, thereby providing a 3D structure.
22. The method of claim 21, wherein the 3D structure is an electronic structure.
23. The method of claim 21, wherein the substrate comprises a circuit board.
24. The method of claim 21, wherein the substrate comprises a nonplanar surface.
25. The method of claim 21, wherein one or both of the first and second patterned layers have portions of differing thickness.
26. The method of claim 21, wherein the first and second dielectric materials comprise the same material.
27. The method of claim 21, wherein the first and second dielectric materials comprise different materials.
28. The method of claim 21, wherein one or both of the first and second dielectric materials comprise a photoimageable material.
29. The method of claim 28, comprising patterning the photoimageable material using a photolithographic technique.
30. The method of claim 21, wherein one or both of the first and second dielectric materials comprise a metallization catalyst disposed therethrough.
31. The method of claim 30, comprising etching the dielectric material comprising the metallization catalyst to increase the number of catalyst sites in a surface thereof.
32. The method of claim 30, comprising exposing the first and second dielectric materials with metal-containing material to selectively deposit metal on the dielectric material containing the metallization catalyst.
33. The method of claim 32, wherein the metal-containing material comprises a gas or a vapor.
34. The method of claim 21, wherein only one of the first and second dielectric materials comprise a metallization catalyst disposed therethrough.
35. The method of claim 34, comprising exposing the first and second dielectric materials with a process that selectively deposits metal on the dielectric containing the metallization catalyst while not depositing metal on the other dielectric material.
36. The method of claim 35, wherein the process comprises atomic layer deposition.
37. The method of claim 21, comprising removing one or both of the first and second dielectric materials.
38. The method of claim 21, comprising milling one or both of the first and second layers to planarize the surface of the layer.
39. The method of claim 21, wherein the step of depositing the metal comprises deposition by electroless metallization.
40. The method of claim 39, wherein the metal comprises copper.
41. The method of claim 21, wherein the step of depositing the metal comprises deposition by electrolytic plating.
42. The method of claim 41, wherein the metal comprises copper.
43. The method of claim 21, wherein the metal comprises copper.
44. A method of fabricating a 3D structure, comprising:
providing a substrate having at least one integrated circuit disposed thereon;
depositing onto the substrate using 3D printing a first dielectric material to create a patterned layer having at least one region in which the first dielectric material is deposited and at least one void region in which no first dielectric material is deposited;
depositing, on the first patterned layer, a second dielectric material different from the first dielectric material to create a second patterned layer having at least one region in which the second dielectric material is deposited and at least one void region in which no second dielectric material is deposited; and
exposing the first and second dielectric materials with a process that selectively deposits metal on only one of the first and second dielectric materials.
US16/002,025 2011-07-13 2018-06-07 Methods of fabricating electronic and mechanical structures Abandoned US20180319108A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/002,025 US20180319108A1 (en) 2011-07-13 2018-06-07 Methods of fabricating electronic and mechanical structures

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161507496P 2011-07-13 2011-07-13
PCT/US2012/046734 WO2013010108A1 (en) 2011-07-13 2012-07-13 Methods of fabricating electronic and mechanical structures
US201414232396A 2014-05-05 2014-05-05
US16/002,025 US20180319108A1 (en) 2011-07-13 2018-06-07 Methods of fabricating electronic and mechanical structures

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
US14/232,396 Continuation US9993982B2 (en) 2011-07-13 2012-07-13 Methods of fabricating electronic and mechanical structures
PCT/US2012/046734 Continuation WO2013010108A1 (en) 2011-07-13 2012-07-13 Methods of fabricating electronic and mechanical structures

Publications (1)

Publication Number Publication Date
US20180319108A1 true US20180319108A1 (en) 2018-11-08

Family

ID=47506581

Family Applications (2)

Application Number Title Priority Date Filing Date
US14/232,396 Expired - Fee Related US9993982B2 (en) 2011-07-13 2012-07-13 Methods of fabricating electronic and mechanical structures
US16/002,025 Abandoned US20180319108A1 (en) 2011-07-13 2018-06-07 Methods of fabricating electronic and mechanical structures

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US14/232,396 Expired - Fee Related US9993982B2 (en) 2011-07-13 2012-07-13 Methods of fabricating electronic and mechanical structures

Country Status (5)

Country Link
US (2) US9993982B2 (en)
EP (1) EP2731783A4 (en)
JP (2) JP6335782B2 (en)
KR (1) KR101982887B1 (en)
WO (1) WO2013010108A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019210295A1 (en) * 2019-07-11 2021-01-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Process for coating a surface of a substrate by laser deposition welding
EP3878629A1 (en) * 2020-03-11 2021-09-15 Palo Alto Research Center Incorporated Additive manufacturing compositions and methods for the same
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
EP4009439A1 (en) * 2020-12-04 2022-06-08 HENSOLDT Sensors GmbH A waveguide and method for the additive production of a waveguide
WO2022173541A1 (en) * 2021-02-15 2022-08-18 Raytheon Missles & Defense (Rmd) Waveguide fence support

Families Citing this family (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7674671B2 (en) 2004-12-13 2010-03-09 Optomec Design Company Aerodynamic jetting of aerosolized fluids for fabrication of passive structures
EP2381015B1 (en) 2005-08-12 2019-01-16 Modumetal, Inc. Compositionally modulated composite materials
EA201792049A1 (en) 2009-06-08 2018-05-31 Модьюметал, Инк. ELECTRICALLY DESIGNED NANOLAMINATE COATINGS AND SHELLS FOR PROTECTION AGAINST CORROSION
US20170151719A1 (en) 2011-08-29 2017-06-01 Impossible Objects Llc Methods and Apparatus for Three-Dimensional Printed Composites Based on Folded Substrate Sheets
WO2013033273A2 (en) 2011-08-29 2013-03-07 Impossible Objects Llc Methods and apparatus for 3d fabrication
US9833949B2 (en) 2011-08-29 2017-12-05 Impossible Objects, Inc. Apparatus for fabricating three-dimensional printed composites
US9776376B2 (en) 2011-08-29 2017-10-03 Impossible Objects, LLC Methods and apparatus for three-dimensional printed composites based on flattened substrate sheets
CN104379324A (en) * 2012-04-10 2015-02-25 阿雷蒙公司 Printed encapsulation
US9156680B2 (en) * 2012-10-26 2015-10-13 Analog Devices, Inc. Packages and methods for packaging
US10343243B2 (en) 2013-02-26 2019-07-09 Robert Swartz Methods and apparatus for construction of machine tools
EP2961585B1 (en) * 2013-02-26 2020-05-27 Impossible Objects LLC Methods and apparatus for three-dimensional printed composites
WO2014144488A1 (en) * 2013-03-15 2014-09-18 The George Washington University, A Congressionally Chartered Not-For-Profit Corporation 3d biomimetic, bi-phasic key featured scaffold for osteochondral repair
EP2971264A4 (en) 2013-03-15 2017-05-31 Modumetal, Inc. Nanolaminate coatings
CA2905513C (en) 2013-03-15 2022-05-03 Modumetal, Inc. Nickel chromium nanolaminate coating having high hardness
EP2971266A4 (en) 2013-03-15 2017-03-01 Modumetal, Inc. A method and apparatus for continuously applying nanolaminate metal coatings
CA2905536C (en) * 2013-03-15 2023-03-07 Modumetal, Inc. Electrodeposited compositions and nanolaminated alloys for articles prepared by additive manufacturing processes
CN103327741B (en) * 2013-07-04 2016-03-02 江俊逢 A kind of base plate for packaging based on 3D printing and manufacture method thereof
EP3024881B1 (en) 2013-07-26 2018-09-05 Hewlett-Packard Development Company L.P. Composite support material for three-dimensional printing
GB201317626D0 (en) * 2013-10-04 2013-11-20 Schlumberger Holdings Solids in borehole fluids
US9573435B2 (en) * 2013-09-29 2017-02-21 Elka Suspension Inc. Dual inline hydraulic device
US10263342B2 (en) 2013-10-15 2019-04-16 Northrop Grumman Systems Corporation Reflectarray antenna system
EP2883589A1 (en) * 2013-12-10 2015-06-17 Andreas Massold Filter
US10197708B2 (en) 2013-12-19 2019-02-05 Hrl Laboratories, Llc Structures having selectively metallized regions and methods of manufacturing the same
TWI511823B (en) 2013-12-20 2015-12-11 財團法人工業技術研究院 Apparatus and method for controlling the additive manufacturing
US9837191B2 (en) 2014-01-02 2017-12-05 Raytheon Company Method of connecting an additive communication cable to an electrical harness
US20150202825A1 (en) * 2014-01-17 2015-07-23 Christopher Cordingley Three Dimensional Printing Method
JP6458346B2 (en) * 2014-03-18 2019-01-30 セイコーエプソン株式会社 Three-dimensional structure manufacturing apparatus and three-dimensional structure manufacturing method
EP2933838A1 (en) * 2014-04-16 2015-10-21 Thomson Licensing Method of making a three dimensional printed memory
CN107073518B (en) 2014-04-23 2020-12-18 宾夕法尼亚大学理事会 Scalable, printable, patterned sheet of high mobility graphene on flexible substrates
US20150360463A1 (en) * 2014-06-12 2015-12-17 Laurence P. Sadwick Vacuum Electronic Device 3-D Printing
DE102014110156A1 (en) * 2014-07-18 2016-01-21 Harting Electric Gmbh & Co. Kg Method of providing data
KR102353254B1 (en) 2014-08-07 2022-01-18 오르보테크 엘티디. Lift printing system
US10580611B2 (en) 2014-08-21 2020-03-03 Raytheon Company Rapid 3D prototyping and fabricating of slow-wave structures, including electromagnetic meta-material structures, for millimeter-wavelength and terahertz-frequency high-power vacuum electronic devices
CA2961507C (en) 2014-09-18 2024-04-09 Modumetal, Inc. Methods of preparing articles by electrodeposition and additive manufacturing processes
EP3194642A4 (en) 2014-09-18 2018-07-04 Modumetal, Inc. A method and apparatus for continuously applying nanolaminate metal coatings
EP3219467B2 (en) * 2014-09-19 2023-08-16 FUJI Corporation Manufacturing apparatus and manufacturing method
WO2016063270A1 (en) 2014-10-19 2016-04-28 Orbotech Ltd. Llift printing of conductive traces onto a semiconductor substrate
KR101702101B1 (en) * 2014-11-27 2017-02-13 숭실대학교산학협력단 3d printing system and method using spin coating technique
CN105874595B (en) 2014-12-09 2020-02-21 英特尔公司 Three-dimensional structures in casting mold materials
US20160167089A1 (en) * 2014-12-11 2016-06-16 Palo Alto Research Center Incorporation Forming sacrificial structures using phase-change materials that sublimate
FR3031229B1 (en) * 2014-12-24 2018-04-20 Thales METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE COMPRISING A RADIOFREQUENCY RESONANT ELEMENT CONNECTED TO AN INTEGRATED CIRCUIT
KR101854845B1 (en) 2014-12-31 2018-05-04 주식회사 후본 3 dimentional printer output method for loading electrical components
KR102282860B1 (en) 2015-01-19 2021-07-28 오르보테크 엘티디. Printing of three-dimensional metal structures with a sacrificial support
CN106132654B (en) * 2015-02-03 2019-05-17 飞利浦照明控股有限公司 For forming and replicating the mold based on fused glass pellet of object, for the method and fused glass pellet 3D printer of its manufacture
JP6466479B2 (en) * 2015-02-05 2019-02-06 株式会社Fuji Data conversion apparatus and additive manufacturing system
US10994473B2 (en) * 2015-02-10 2021-05-04 Optomec, Inc. Fabrication of three dimensional structures by in-flight curing of aerosols
US20170348903A1 (en) * 2015-02-10 2017-12-07 Optomec, Inc. Fabrication of Three-Dimensional Materials Gradient Structures by In-Flight Curing of Aerosols
EP3259964A4 (en) * 2015-02-18 2018-11-14 Optomec, Inc. Additive fabrication of single and multi-layer electronic circuits
JP6399403B2 (en) * 2015-02-27 2018-10-03 住友電工焼結合金株式会社 High frequency heating coil assembly and manufacturing method thereof
JP6381467B2 (en) * 2015-03-20 2018-08-29 株式会社Pfu Coaxial metal body manufacturing method
FR3033977B1 (en) * 2015-03-20 2018-08-17 Thales METHOD FOR MANUFACTURING A PRINTED CIRCUIT AND CORRESPONDING PRINTED CIRCUITS
GB2554567B (en) * 2015-04-16 2021-02-24 Schlumberger Technology Bv 3D-printed seals and connectors for electric submersible pumps
ITTO20150231A1 (en) 2015-04-24 2016-10-24 St Microelectronics Srl PROCEDURE FOR PRODUCING LEAD FRAME FOR CORRESPONDING ELECTRONIC COMPONENTS, COMPONENT AND IT PRODUCT
ITTO20150230A1 (en) * 2015-04-24 2016-10-24 St Microelectronics Srl PROCEDURE FOR PRODUCING ELECTRONIC COMPONENTS, COMPONENT AND CORRESPONDING IT PRODUCT
GB2538289B (en) * 2015-05-14 2018-05-09 Dev Ltd Inkjet type additive manufacturing
US20180104897A1 (en) * 2015-06-10 2018-04-19 Hewlett-Packard Development Company, L.P. Build temperature modulation
CN104908324A (en) * 2015-06-10 2015-09-16 中国科学技术大学 3D printing device of biological tissue optical simulation
US10471538B2 (en) 2015-07-09 2019-11-12 Orbotech Ltd. Control of lift ejection angle
US9905607B2 (en) * 2015-07-28 2018-02-27 General Electric Company Radiation detector fabrication
US9786975B2 (en) 2015-08-04 2017-10-10 Raytheon Company Transmission line formed of printed self-supporting metallic material
US10320075B2 (en) 2015-08-27 2019-06-11 Northrop Grumman Systems Corporation Monolithic phased-array antenna system
JP6573510B2 (en) * 2015-09-11 2019-09-11 日本碍子株式会社 Porous material manufacturing method and manufacturing apparatus
US9754911B2 (en) 2015-10-05 2017-09-05 Globalfoundries Inc. IC structure with angled interconnect elements
WO2017069752A1 (en) * 2015-10-21 2017-04-27 Hewlett-Packard Development Company, L.P. Three-dimensional (3d) printing
US11648731B2 (en) 2015-10-29 2023-05-16 Hewlett-Packard Development Company, L.P. Forming three-dimensional (3D) printed electronics
JP6718132B2 (en) * 2015-11-06 2020-07-08 セイコーエプソン株式会社 Method and apparatus for manufacturing three-dimensional structure
WO2017087546A1 (en) 2015-11-17 2017-05-26 Impossible Objects, LLC Additive manufacturing method and apparatus
KR102546450B1 (en) 2015-11-22 2023-06-21 오르보테크 엘티디. Control of surface properties of printed 3-dimensional structures
US10646969B2 (en) * 2015-12-02 2020-05-12 Hamilton Sunstrand Corporation Cross flow ceramic heat exchanger and method for manufacturing
DE102016002052A1 (en) * 2015-12-18 2017-06-22 Liebherr-Components Biberach Gmbh Control cabinet and method for its production
JP6895445B2 (en) 2016-02-12 2021-06-30 インポッシブル オブジェクツ,エルエルシー Methods and equipment for automated composite system additive manufacturing
US11227749B2 (en) 2016-02-18 2022-01-18 Lam Research Corporation 3D printed plasma arrestor for an electrostatic chuck
US11104029B2 (en) 2016-02-26 2021-08-31 Hewlett-Packard Development Company, L.P. Three-dimensional (3D) printing
DE102016103790B8 (en) 2016-03-03 2021-06-02 Infineon Technologies Ag Production of a package using a platable encapsulation material
US20170252804A1 (en) * 2016-03-04 2017-09-07 Lockheed Martin Corporation Additive manufacturing processes utilizing metal nanoparticles
CN105551792B (en) * 2016-03-08 2018-05-08 佛山市程显科技有限公司 A kind of equipment for increasing material manufacturing dissimilar materials magnetic core
CN107199337B (en) * 2016-03-16 2020-05-01 华邦电子股份有限公司 Method for forming metal wire structure
CA3021432A1 (en) * 2016-03-26 2017-10-05 Nano-Dimension Technologies, Ltd. Fabrication of pcb and fpc with shielded tracks and/or components using 3d inkjet printing
WO2017171512A1 (en) * 2016-04-01 2017-10-05 주식회사 엘지화학 3d printing method
KR102056100B1 (en) 2016-04-01 2019-12-17 주식회사 엘지화학 3D Printing Method
KR102027168B1 (en) * 2016-05-02 2019-10-02 한국전자통신연구원 Extruder for metal material and 3d printer using the same
US11110540B2 (en) 2016-05-02 2021-09-07 Electronics And Telecommunications Research Institute Extruder for metal material and 3D printer using the same
WO2017200527A1 (en) * 2016-05-16 2017-11-23 Hewlett-Packard Development Company, L.P. Generating a shape profile for a 3d object
US20180043630A1 (en) * 2016-08-10 2018-02-15 Xerox Corporation Formation and separation of 3d printed parts within multi-part build structures
US10121926B2 (en) * 2016-08-22 2018-11-06 Shahid Rajaee Teacher Training University Graphene-based detector for W-band and terahertz radiations
US10525690B2 (en) 2016-09-07 2020-01-07 General Electric Company Additive manufacturing-based low-profile inductor
CN109952391B (en) 2016-09-08 2022-11-01 莫杜美拓有限公司 Method of providing a laminate coating on a workpiece, and articles made therefrom
US10946592B2 (en) 2016-09-11 2021-03-16 Impossible Objects, Inc. Resistive heating-compression method and apparatus for composite-based additive manufacturing
JP6922177B2 (en) * 2016-09-20 2021-08-18 日本電気株式会社 Manufacturing method in the laminated molding method of wiring structure
JP6703674B2 (en) * 2016-09-21 2020-06-03 株式会社東海理化電機製作所 Method for manufacturing MEMS device
WO2018075488A1 (en) 2016-10-18 2018-04-26 Formlabs, Inc. Techniques for metallic material deposition in additive fabrication and related systems and methods
KR102040234B1 (en) * 2016-11-28 2019-11-06 주식회사 후본 Different material convergence 3d printer and method for printing using it
WO2018102731A1 (en) * 2016-12-02 2018-06-07 Markforged, Inc. Additively manufactured parts with debinding acceleration
US10000011B1 (en) 2016-12-02 2018-06-19 Markforged, Inc. Supports for sintering additively manufactured parts
DE102017000744A1 (en) * 2017-01-27 2018-08-02 Friedrich-Alexander-Universität Erlangen-Nürnberg Method for producing an electronic or electrical system and system produced by the method
EP3355667A1 (en) * 2017-01-30 2018-08-01 Siemens Aktiengesellschaft Method for producing an electrical circuit and electrical circuit
CN110382205B (en) 2017-03-09 2021-10-22 昕诺飞控股有限公司 Core-shell filament for printing smooth FDM 3D articles
US10597249B2 (en) 2017-03-17 2020-03-24 Impossible Objects, Inc. Method and apparatus for stacker module for automated composite-based additive manufacturing machine
CN111629885B (en) 2017-03-17 2021-10-29 因帕瑟伯物体公司 Method and apparatus for powder system reclamation for printing processes
US11040490B2 (en) 2017-03-17 2021-06-22 Impossible Objects, Inc. Method and apparatus for platen module for automated composite-based additive manufacturing machine
CN110637107B (en) 2017-03-24 2022-08-19 莫杜美拓有限公司 Lift plunger with electroplated layer and system and method for producing the same
WO2018185759A1 (en) * 2017-04-03 2018-10-11 Creative Ic3D Ltd Process for producing three dimensional structures
WO2018194564A1 (en) * 2017-04-18 2018-10-25 Hewlett-Packard Development Company, L.P. Increasing electrical conductivity at selected locations of a 3d object
KR101912311B1 (en) * 2017-04-21 2018-10-26 (주)센트롤 Three-dimensional printer
EP3612669A1 (en) 2017-04-21 2020-02-26 Modumetal, Inc. Tubular articles with electrodeposited coatings, and systems and methods for producing the same
WO2018209029A1 (en) * 2017-05-11 2018-11-15 Markforged, Inc. Rapid debinding via internal fluid channels
TW201901887A (en) 2017-05-24 2019-01-01 以色列商奧寶科技股份有限公司 Electrical interconnection circuit components on the substrate without prior patterning
US11075456B1 (en) 2017-08-31 2021-07-27 Northrop Grumman Systems Corporation Printed board antenna system
EP3454370B1 (en) * 2017-09-11 2020-09-09 Nokia Technologies Oy Package, and method of manufacturing a package comprising an enclosure and an integrated circuit
EP3468312B1 (en) * 2017-10-06 2023-11-29 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Method of manufacturing a component carrier having a three dimensionally printed wiring structure
DE102017123307A1 (en) * 2017-10-06 2019-04-11 At & S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier with at least one part formed as a three-dimensional printed structure
KR20200087196A (en) 2017-11-13 2020-07-20 옵토멕 인코포레이티드 Shuttering of aerosol streams
US11639556B2 (en) * 2017-12-28 2023-05-02 Intel Corporation Massively-parallel micronozzle array for direct write electrodeposition of high-density microstructure arrays
EP3732019A1 (en) * 2017-12-31 2020-11-04 Stratasys Ltd. 3d printing of catalytic formulation for selective metal deposition
CN110193602B (en) * 2018-02-27 2022-04-22 西门子公司 Method for improving inner surface quality of 3D printing piece
WO2019191242A1 (en) * 2018-03-27 2019-10-03 Nano-Dimension Technologies, Ltd. Direct inkjet printing of quadrilateral cross section plated and/or filled vias
US11338501B2 (en) * 2018-04-03 2022-05-24 University Of Massachusetts Fabrication of circuit elements using additive techniques
US20190319436A1 (en) * 2018-04-12 2019-10-17 Delphi Technologies, Llc Method of manufacturing an electrical assembly by overprinting material using an additive manufacturing process
US10750618B2 (en) * 2018-04-18 2020-08-18 University Of Hawaii System and method for manufacture of circuit boards
WO2019210264A1 (en) 2018-04-27 2019-10-31 Modumetal, Inc. Apparatuses, systems, and methods for producing a plurality of articles with nanolaminated coatings using rotation
CN108566736B (en) * 2018-06-22 2023-09-26 北京梦之墨科技有限公司 Printing device and preparation method of printed circuit
JP7053832B2 (en) * 2018-07-13 2022-04-12 株式会社Fuji Circuit forming method and circuit forming device
CN109440089B (en) * 2018-10-26 2021-02-02 东南大学 Metal foil type strain gauge design and manufacturing method based on hybrid 3D printing technology
KR102205232B1 (en) * 2019-02-20 2021-01-21 한국에너지기술연구원 3d printer apparatus for manufacturing super capacitor and secondary battery
US10944164B2 (en) 2019-03-13 2021-03-09 Northrop Grumman Systems Corporation Reflectarray antenna for transmission and reception at multiple frequency bands
US11587839B2 (en) 2019-06-27 2023-02-21 Analog Devices, Inc. Device with chemical reaction chamber
KR102078814B1 (en) * 2019-07-29 2020-04-07 주식회사 에스에프에스 Hybrid 3D printer
US11643566B2 (en) 2019-09-09 2023-05-09 Xerox Corporation Particulate compositions comprising a metal precursor for additive manufacturing and methods associated therewith
US10892549B1 (en) 2020-02-28 2021-01-12 Northrop Grumman Systems Corporation Phased-array antenna system
CN111509349B (en) * 2020-05-20 2021-11-23 上海航天电子通讯设备研究所 Micro-coaxial transmission line, preparation method thereof and metal 3D printing device
GB202009324D0 (en) 2020-06-18 2020-08-05 Univ Malta Process for production of metal scaffolds and foams
CN111739797A (en) * 2020-07-31 2020-10-02 工业和信息化部电子第五研究所华东分所 Method for depositing metal platinum film pattern on sapphire substrate, product and application
US11692049B2 (en) 2020-09-18 2023-07-04 Ford Global Technologies, Llc Additively manufactured thermoset polymers for metal plating and metal plated parts formed therefrom
WO2023074156A1 (en) * 2021-10-29 2023-05-04 ソニーグループ株式会社 Wave control medium, metamaterial, electromagnetic wave control member, sensor, electromagnetic wave waveguide, computation element, transmitting/receivng device, light-receiving/emitting device, energy absorption material, blackbody material, extinction material, energy conversion material, electric wave lens, optical lens, color filter, frequency selection filter, electromagnetic wave reflection material, beam phase control device, electrospinning device, device for manufacturing wave control medium, and method for manufacturing wave control medium
FR3131244B1 (en) * 2021-12-23 2024-04-19 Thales Sa METHOD FOR MANUFACTURING A POLYMERIC AND METALLIC AND/OR DIELECTRIC MULTI-MATERIAL PART.

Family Cites Families (273)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US738484A (en) 1902-08-09 1903-09-08 Acme Heel Protector Mfg Company Protector for heels and soles of shoes.
GB693969A (en) 1950-04-18 1953-07-08 Standard Telephones Cables Ltd Improvements in or relating to joints for coaxial cable
US2812501A (en) 1954-03-04 1957-11-05 Sanders Associates Inc Transmission line
US2914766A (en) 1955-06-06 1959-11-24 Sanders Associates Inc Three conductor planar antenna
US2997519A (en) 1959-10-08 1961-08-22 Bell Telephone Labor Inc Multicoaxial line cables
US3311966A (en) 1962-09-24 1967-04-04 North American Aviation Inc Method of fabricating multilayer printed-wiring boards
US3335489A (en) 1962-09-24 1967-08-15 North American Aviation Inc Interconnecting circuits with a gallium and indium eutectic
US3352730A (en) 1964-08-24 1967-11-14 Sanders Associates Inc Method of making multilayer circuit boards
US3309632A (en) 1965-04-13 1967-03-14 Kollmorgen Corp Microwave contactless coaxial connector
US3464855A (en) 1966-09-06 1969-09-02 North American Rockwell Process for forming interconnections in a multilayer circuit board
FR1573432A (en) 1967-07-06 1969-07-04
US3526867A (en) 1967-07-17 1970-09-01 Keeler Brass Co Interlocking electrical connector
US3598107A (en) 1968-07-25 1971-08-10 Hamamatsu T V Co Ltd Pupillary motion observing apparatus
US3537043A (en) 1968-08-06 1970-10-27 Us Air Force Lightweight microwave components and wave guides
US3577105A (en) 1969-05-29 1971-05-04 Us Army Method and apparatus for joining plated dielectric-form waveguide components
DE2020173C3 (en) 1970-04-24 1981-01-08 Spinner-Gmbh Elektrotechnische Fabrik, 8000 Muenchen Insulating support arrangement in coaxial lines
US3775844A (en) 1970-06-25 1973-12-04 Bunker Ramo Method of fabricating a multiwafer electrical circuit structure
US3791858A (en) 1971-12-13 1974-02-12 Ibm Method of forming multi-layer circuit panels
DE7221114U (en) 1972-06-06 1972-10-19 Felten & Guilleaume Kabelwerk Airspace-insulated coaxial H.F. cable with corrugated conductors and individual plastic spacers arranged on the inner conductor
US3884549A (en) 1973-04-30 1975-05-20 Univ California Two demensional distributed feedback devices and lasers
GB1481485A (en) 1975-05-29 1977-07-27 Furukawa Electric Co Ltd Ultra-high-frequency leaky coaxial cable
US4033656A (en) 1975-09-02 1977-07-05 Zero Manufacturing Company Low profile integrated circuit socket
US4021789A (en) 1975-09-29 1977-05-03 International Business Machines Corporation Self-aligned integrated circuits
SE404863B (en) 1975-12-17 1978-10-30 Perstorp Ab PROCEDURE FOR MAKING A MULTIPLE STORE CARD
US4275944A (en) 1979-07-09 1981-06-30 Sochor Jerzy R Miniature connector receptacles employing contacts with bowed tines and parallel mounting arms
EP0047165B1 (en) 1980-09-03 1984-11-28 Crosfield Electronics Limited Improvements relating to rotary printing presses
JPS5772721U (en) 1980-10-20 1982-05-04
FR2496996A1 (en) 1980-12-18 1982-06-25 Thomson Csf HYPERFREQUENCY TRANSMISSION LINE OF THE AIR TRIPLAQUE TYPE AND USES THEREOF
US4417393A (en) 1981-04-01 1983-11-29 General Electric Company Method of fabricating high density electronic circuits having very narrow conductors
US4365222A (en) 1981-04-06 1982-12-21 Bell Telephone Laboratories, Incorporated Stripline support assembly
US4348253A (en) 1981-11-12 1982-09-07 Rca Corporation Method for fabricating via holes in a semiconductor wafer
US4591411A (en) 1982-05-05 1986-05-27 Hughes Aircraft Company Method for forming a high density printed wiring board
US4663497A (en) 1982-05-05 1987-05-05 Hughes Aircraft Company High density printed wiring board
US4521755A (en) 1982-06-14 1985-06-04 At&T Bell Laboratories Symmetrical low-loss suspended substrate stripline
US4539534A (en) 1983-02-23 1985-09-03 Hughes Aircraft Company Square conductor coaxial coupler
FR2543746B1 (en) 1983-03-28 1985-12-27 Commissariat Energie Atomique HIGH DENSITY CONTACT MICROCONNECTOR
US4641140A (en) 1983-09-26 1987-02-03 Harris Corporation Miniaturized microwave transmission link
US4581301A (en) 1984-04-10 1986-04-08 Michaelson Henry W Additive adhesive based process for the manufacture of printed circuit boards
EP0165685B1 (en) 1984-06-20 1992-09-23 Gould Inc. Laser-based system for the total repair of photomasks
US4876322A (en) 1984-08-10 1989-10-24 Siemens Aktiengesselschaft Irradiation cross-linkable thermostable polymer system, for microelectronic applications
US4673904A (en) 1984-11-14 1987-06-16 Itt Corporation Micro-coaxial substrate
US4647878A (en) 1984-11-14 1987-03-03 Itt Corporation Coaxial shielded directional microwave coupler
US4700159A (en) 1985-03-29 1987-10-13 Weinschel Engineering Co., Inc. Support structure for coaxial transmission line using spaced dielectric balls
US4915983A (en) 1985-06-10 1990-04-10 The Foxboro Company Multilayer circuit board fabrication process
DE3623093A1 (en) 1986-07-09 1988-01-21 Standard Elektrik Lorenz Ag Method for producing through-connections in printed circuit boards or multilayer printed circuit boards having inorganic or organic/inorganic insulating layers
US5069749A (en) 1986-07-29 1991-12-03 Digital Equipment Corporation Method of fabricating interconnect layers on an integrated circuit chip using seed-grown conductors
US4717064A (en) 1986-08-15 1988-01-05 Unisys Corporation Wave solder finger shield apparatus
CA1278080C (en) 1986-08-20 1990-12-18 Yasuo Yamagishi Projection-type multi-color liquid crystal display device
US4771294A (en) 1986-09-10 1988-09-13 Harris Corporation Modular interface for monolithic millimeter wave antenna array
DE3635141C1 (en) 1986-10-15 1988-03-03 Pelikan Ag Thermocarbon tape with a plastic-bound melting ink and a process for producing this tape
US4857418A (en) 1986-12-08 1989-08-15 Honeywell Inc. Resistive overlayer for magnetic films
FR2619253B1 (en) 1987-08-03 1990-01-19 Aerospatiale DEVICE FOR JOINING TWO STRUCTURES FOR MICROWAVE, COAXIAL AND DIFFERENT DIAMETERS
US4880684A (en) 1988-03-11 1989-11-14 International Business Machines Corporation Sealing and stress relief layers and use thereof
DE3812414A1 (en) 1988-04-14 1989-10-26 Standard Elektrik Lorenz Ag METHOD FOR PRODUCING AN ALL-SIDED SHIELDED SIGNAL LINE
US4808273A (en) 1988-05-10 1989-02-28 Avantek, Inc. Method of forming completely metallized via holes in semiconductors
US4859806A (en) 1988-05-17 1989-08-22 Microelectronics And Computer Technology Corporation Discretionary interconnect
US5132248A (en) 1988-05-31 1992-07-21 The United States Of America As Represented By The United States Department Of Energy Direct write with microelectronic circuit fabrication
US4856184A (en) 1988-06-06 1989-08-15 Tektronix, Inc. Method of fabricating a circuit board
JPH027587A (en) 1988-06-27 1990-01-11 Yokogawa Electric Corp Variable frequency light source
FR2640083B1 (en) 1988-12-06 1991-05-03 Thomson Csf SUPPORT FOR MICROWAVE TRANSMISSION LINE, ESPECIALLY OF THE PLATE TYPE
US4969979A (en) 1989-05-08 1990-11-13 International Business Machines Corporation Direct electroplating of through holes
US5089880A (en) 1989-06-07 1992-02-18 Amdahl Corporation Pressurized interconnection system for semiconductor chips
US5100501A (en) 1989-06-30 1992-03-31 Texas Instruments Incorporated Process for selectively depositing a metal in vias and contacts by using a sacrificial layer
GB8915517D0 (en) 1989-07-06 1989-08-23 Zed Instr Ltd Preparing printing screens
US4975142A (en) 1989-11-07 1990-12-04 General Electric Company Fabrication method for printed circuit board
JP3027587B2 (en) 1989-11-07 2000-04-04 株式会社リコー Facsimile machine
JPH041710A (en) 1990-04-19 1992-01-07 Matsushita Electric Ind Co Ltd Lens adjusting device
DE4027994A1 (en) 1990-09-04 1992-03-05 Gw Elektronik Gmbh HF MAGNETIC COIL ARRANGEMENT AND METHOD FOR THEIR PRODUCTION
GB2249862B (en) 1990-10-01 1994-08-17 Asahi Optical Co Ltd Device and method for retrieving audio signals
EP0485831A1 (en) 1990-11-13 1992-05-20 F. Hoffmann-La Roche Ag Automatic analyser
US5406235A (en) 1990-12-26 1995-04-11 Tdk Corporation High frequency device
US5312456A (en) 1991-01-31 1994-05-17 Carnegie Mellon University Micromechanical barb and method for making the same
JPH04256203A (en) 1991-02-07 1992-09-10 Mitsubishi Electric Corp Package for microwave band ic
JP3177746B2 (en) 1991-03-20 2001-06-18 株式会社日立製作所 Data processing system and method
US5119049A (en) 1991-04-12 1992-06-02 Ail Systems, Inc. Ultraminiature low loss coaxial delay line
US5274484A (en) 1991-04-12 1993-12-28 Fujitsu Limited Gradation methods for driving phase transition liquid crystal using a holding signal
US5381157A (en) 1991-05-02 1995-01-10 Sumitomo Electric Industries, Ltd. Monolithic microwave integrated circuit receiving device having a space between antenna element and substrate
US5227013A (en) 1991-07-25 1993-07-13 Microelectronics And Computer Technology Corporation Forming via holes in a multilevel substrate in a single step
US5207371A (en) * 1991-07-29 1993-05-04 Prinz Fritz B Method and apparatus for fabrication of three-dimensional metal articles by weld deposition
US5299939A (en) 1992-03-05 1994-04-05 International Business Machines Corporation Spring array connector
US5213511A (en) 1992-03-27 1993-05-25 Hughes Aircraft Company Dimple interconnect for flat cables and printed wiring boards
US5334956A (en) 1992-03-30 1994-08-02 Motorola, Inc. Coaxial cable having an impedance matched terminating end
DE4309917A1 (en) 1992-03-30 1993-10-07 Awa Microelectronics Process for the production of silicon microstructures and silicon microstructure
JP3158621B2 (en) 1992-03-31 2001-04-23 横河電機株式会社 Multi-chip module
US5430257A (en) 1992-08-12 1995-07-04 Trw Inc. Low stress waveguide window/feedthrough assembly
US5294567A (en) 1993-01-08 1994-03-15 E. I. Du Pont De Nemours And Company Method for forming via holes in multilayer circuits
ATE172837T1 (en) 1993-02-02 1998-11-15 Ast Research Inc CIRCUIT BOARD ASSEMBLY WITH SHIELDING GRIDS AND PRODUCTION METHOD
JPH06302964A (en) 1993-04-16 1994-10-28 Oki Electric Ind Co Ltd Circuit board for high-speed signal transmission
US5454161A (en) 1993-04-29 1995-10-03 Fujitsu Limited Through hole interconnect substrate fabrication process
JP3537161B2 (en) 1993-08-27 2004-06-14 オリンパス株式会社 Manufacturing method of three-dimensional structure
NL9400165A (en) 1994-02-03 1995-09-01 Hollandse Signaalapparaten Bv Transmission line network.
JPH1134331A (en) 1994-04-18 1999-02-09 Beam Soken:Kk Laser printer system
US5466972A (en) 1994-05-09 1995-11-14 At&T Corp. Metallization for polymer-dielectric multichip modules including a Ti/Pd alloy layer
JP3587884B2 (en) 1994-07-21 2004-11-10 富士通株式会社 Method for manufacturing multilayer circuit board
JPH08118723A (en) 1994-10-28 1996-05-14 Sapporo Breweries Ltd Laser printer
US5529504A (en) 1995-04-18 1996-06-25 Hewlett-Packard Company Electrically anisotropic elastomeric structure with mechanical compliance and scrub
US5682062A (en) 1995-06-05 1997-10-28 Harris Corporation System for interconnecting stacked integrated circuits
US5814889A (en) 1995-06-05 1998-09-29 Harris Corporation Intergrated circuit with coaxial isolation and method
US5903059A (en) 1995-11-21 1999-05-11 International Business Machines Corporation Microconnectors
US5633615A (en) 1995-12-26 1997-05-27 Hughes Electronics Vertical right angle solderless interconnects from suspended stripline to three-wire lines on MIC substrates
KR100216839B1 (en) 1996-04-01 1999-09-01 김규현 Solder ball land structure of bga semiconductor package
US5712607A (en) 1996-04-12 1998-01-27 Dittmer; Timothy W. Air-dielectric stripline
JPH1012995A (en) * 1996-06-24 1998-01-16 Hitachi Cable Ltd Manufacture of circuit component provided with three-dimensional structure
US5793272A (en) 1996-08-23 1998-08-11 International Business Machines Corporation Integrated circuit toroidal inductor
TW380772U (en) 1996-09-26 2000-01-21 Hon Hai Prec Ind Co Ltd Miniature connector
JP3218996B2 (en) 1996-11-28 2001-10-15 松下電器産業株式会社 Millimeter wave waveguide
US5860812A (en) 1997-01-23 1999-01-19 Litton Systems, Inc. One piece molded RF/microwave coaxial connector
US7148722B1 (en) 1997-02-20 2006-12-12 Altera Corporation PCI-compatible programmable logic devices
JP3269827B2 (en) 1997-04-04 2002-04-02 ユニバーシティ・オブ・サザン・カリフォルニア Articles, methods and apparatus for electrochemical manufacturing
US5940674A (en) 1997-04-09 1999-08-17 Massachusetts Institute Of Technology Three-dimensional product manufacture using masks
JP3346263B2 (en) 1997-04-11 2002-11-18 イビデン株式会社 Printed wiring board and manufacturing method thereof
US5925206A (en) 1997-04-21 1999-07-20 International Business Machines Corporation Practical method to make blind vias in circuit boards and other substrates
US6180261B1 (en) 1997-10-21 2001-01-30 Nitto Denko Corporation Low thermal expansion circuit board and multilayer wiring circuit board
FI106585B (en) 1997-10-22 2001-02-28 Nokia Mobile Phones Ltd Coaxial cable, a method for making a coaxial cable, and wireless communication
US6324754B1 (en) 1998-03-25 2001-12-04 Tessera, Inc. Method for fabricating microelectronic assemblies
US6329605B1 (en) 1998-03-26 2001-12-11 Tessera, Inc. Components with conductive solder mask layers
US6008102A (en) 1998-04-09 1999-12-28 Motorola, Inc. Method of forming a three-dimensional integrated inductor
US5977842A (en) 1998-07-01 1999-11-02 Raytheon Company High power broadband coaxial balun
KR20000011585A (en) 1998-07-28 2000-02-25 윤덕용 Semiconductor device and method for manufacturing the same
US6294401B1 (en) 1998-08-19 2001-09-25 Massachusetts Institute Of Technology Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same
US6514845B1 (en) 1998-10-15 2003-02-04 Texas Instruments Incorporated Solder ball contact and method
US6441315B1 (en) 1998-11-10 2002-08-27 Formfactor, Inc. Contact structures with blades having a wiping motion
US6045973A (en) 1998-12-11 2000-04-04 Morton International, Inc. Photoimageable compositions having improved chemical resistance and stripping ability
KR100308871B1 (en) 1998-12-28 2001-11-03 윤덕용 coaxial type signal line and fabricating method thereof
US6388198B1 (en) 1999-03-09 2002-05-14 International Business Machines Corporation Coaxial wiring within SOI semiconductor, PCB to system for high speed operation and signal quality
US6294965B1 (en) 1999-03-11 2001-09-25 Anaren Microwave, Inc. Stripline balun
JP2000286549A (en) 1999-03-24 2000-10-13 Fujitsu Ltd Manufacture of substrate provided with via connection
US6207901B1 (en) 1999-04-01 2001-03-27 Trw Inc. Low loss thermal block RF cable and method for forming RF cable
AUPP991899A0 (en) 1999-04-23 1999-05-20 Securency Pty Ltd Laser implanted security device
US6183268B1 (en) 1999-04-27 2001-02-06 The Whitaker Corporation High-density electrical connectors and electrical receptacle contacts therefor
US6799976B1 (en) 1999-07-28 2004-10-05 Nanonexus, Inc. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
WO2001011426A1 (en) 1999-05-27 2001-02-15 Patterning Technologies Limited Method of forming a masking pattern on a surface
EP1220588B1 (en) 1999-07-12 2006-09-13 Ibiden Co., Ltd. Method of manufacturing printed-circuit board
US6401001B1 (en) 1999-07-22 2002-06-04 Nanotek Instruments, Inc. Layer manufacturing using deposition of fused droplets
US6232669B1 (en) 1999-10-12 2001-05-15 Advantest Corp. Contact structure having silicon finger contactors and total stack-up structure using same
US6210221B1 (en) 1999-10-13 2001-04-03 Maury Microwave, Inc. Microwave quick connect/disconnect coaxial connectors
AU2001244499A1 (en) 2000-03-20 2001-10-03 Paul Brumer Nanometric scale coherently controlled deposition
DE60109339T2 (en) 2000-03-24 2006-01-12 Texas Instruments Incorporated, Dallas Method for wire bonding
US6535088B1 (en) 2000-04-13 2003-03-18 Raytheon Company Suspended transmission line and method
US6673227B2 (en) * 2000-05-29 2004-01-06 Siemens Production & Logistics Systems Ag Process for producing three-dimensional, selectively metallized parts
US6677225B1 (en) 2000-07-14 2004-01-13 Zyvex Corporation System and method for constraining totally released microcomponents
JP4023076B2 (en) 2000-07-27 2007-12-19 富士通株式会社 Front and back conductive substrate and manufacturing method thereof
US6350633B1 (en) 2000-08-22 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with simultaneously electroplated contact terminal and connection joint
US6589594B1 (en) 2000-08-31 2003-07-08 Micron Technology, Inc. Method for filling a wafer through-via with a conductive material
US6690081B2 (en) * 2000-11-18 2004-02-10 Georgia Tech Research Corporation Compliant wafer-level packaging devices and methods of fabrication
US6600395B1 (en) 2000-12-28 2003-07-29 Nortel Networks Limited Embedded shielded stripline (ESS) structure using air channels within the ESS structure
US6603376B1 (en) 2000-12-28 2003-08-05 Nortel Networks Limited Suspended stripline structures to reduce skin effect and dielectric loss to provide low loss transmission of signals with high data rates or high frequencies
CN1209321C (en) 2001-02-08 2005-07-06 住友电气工业株式会社 Porous ceramic and method for prepartion thereof and microstrip substrate
GB0103754D0 (en) * 2001-02-15 2001-04-04 Vantico Ltd Three-dimensional structured printing
KR100368930B1 (en) 2001-03-29 2003-01-24 한국과학기술원 Three-Dimensional Metal Devices Highly Suspended above Semiconductor Substrate, Their Circuit Model, and Method for Manufacturing the Same
DE10125794B4 (en) 2001-05-26 2005-03-24 Sator Laser Gmbh Method of marking or inscribing metal parts
KR100367474B1 (en) * 2001-06-12 2003-01-10 그랜드디스플레이 주식회사 Flat neon sign device using flat electrode and lower plate structure
US6722197B2 (en) 2001-06-19 2004-04-20 Honeywell International Inc. Coupled micromachined structure
JP2003032007A (en) 2001-07-19 2003-01-31 Nippon Dengyo Kosaku Co Ltd Coaxial feeding tube
US6749737B2 (en) 2001-08-10 2004-06-15 Unimicron Taiwan Corp. Method of fabricating inter-layer solid conductive rods
US6457979B1 (en) 2001-10-29 2002-10-01 Agilent Technologies, Inc. Shielded attachment of coaxial RF connector to thick film integrally shielded transmission line on a substrate
US6914513B1 (en) 2001-11-08 2005-07-05 Electro-Science Laboratories, Inc. Materials system for low cost, non wire-wound, miniature, multilayer magnetic circuit components
DE60232471D1 (en) 2001-11-09 2009-07-09 Wispry Inc Three-layer beam MEMS device and related methods
US20050032375A1 (en) * 2003-05-07 2005-02-10 Microfabrica Inc. Methods for electrochemically fabricating structures using adhered masks, incorporating dielectric sheets, and/or seed layers that are partially removed via planarization
US7259640B2 (en) 2001-12-03 2007-08-21 Microfabrica Miniature RF and microwave components and methods for fabricating such components
US7239219B2 (en) 2001-12-03 2007-07-03 Microfabrica Inc. Miniature RF and microwave components and methods for fabricating such components
US6710680B2 (en) 2001-12-20 2004-03-23 Motorola, Inc. Reduced size, low loss MEMS torsional hinges and MEMS resonators employing such hinges
US6648653B2 (en) 2002-01-04 2003-11-18 Insert Enterprise Co., Ltd. Super mini coaxial microwave connector
US20030221968A1 (en) 2002-03-13 2003-12-04 Memgen Corporation Electrochemical fabrication method and apparatus for producing three-dimensional structures having improved surface finish
CN100567581C (en) 2002-05-07 2009-12-09 微制造公司 The multistep release method of electrochemically fabricated structures
WO2003095710A2 (en) 2002-05-07 2003-11-20 Memgen Corporation Methods of and apparatus for electrochemically fabricating structures
US6987307B2 (en) 2002-06-26 2006-01-17 Georgia Tech Research Corporation Stand-alone organic-based passive devices
JP2005532015A (en) 2002-06-27 2005-10-20 マイクロファブリカ インク Miniature RF and microwave components and methods for manufacturing such components
US6696666B2 (en) 2002-07-03 2004-02-24 Scimed Life Systems, Inc. Tubular cutting process and system
US6735009B2 (en) 2002-07-16 2004-05-11 Motorola, Inc. Electroptic device
US20050230145A1 (en) 2002-08-06 2005-10-20 Toku Ishii Thin-diameter coaxial cable and method of producing the same
KR100466312B1 (en) 2002-08-07 2005-01-13 삼성전자주식회사 Method of manufacturing semiconductor device having an ONO layer
US6827608B2 (en) 2002-08-22 2004-12-07 Corning Gilbert Inc. High frequency, blind mate, coaxial interconnect
US6992544B2 (en) 2002-10-10 2006-01-31 Agilent Technologies, Inc. Shielded surface mount coaxial connector
EP1410923B1 (en) 2002-10-17 2006-08-09 Hell Gravure Systems GmbH Method for producing a printing plate for intaglio printing
US20050250253A1 (en) 2002-10-23 2005-11-10 Cheung Kin P Processes for hermetically packaging wafer level microscopic structures
JP2004200227A (en) 2002-12-16 2004-07-15 Alps Electric Co Ltd Printed inductor
US6888427B2 (en) 2003-01-13 2005-05-03 Xandex, Inc. Flex-circuit-based high speed transmission line
US6975267B2 (en) 2003-02-05 2005-12-13 Northrop Grumman Corporation Low profile active electronically scanned antenna (AESA) for Ka-band radar systems
TWI238513B (en) 2003-03-04 2005-08-21 Rohm & Haas Elect Mat Coaxial waveguide microstructures and methods of formation thereof
US7288723B2 (en) 2003-04-02 2007-10-30 Sun Microsystems, Inc. Circuit board including isolated signal transmission channels
US7628617B2 (en) 2003-06-11 2009-12-08 Neoconix, Inc. Structure and process for a contact grid array formed in a circuitized substrate
TWI244799B (en) 2003-06-06 2005-12-01 Microfabrica Inc Miniature RF and microwave components and methods for fabricating such components
WO2005000592A1 (en) 2003-06-26 2005-01-06 Weather Cock Co.,Ltd. Three-dimensional printer, three-dimensional printing method, and three-dimensionally printed article
KR100579209B1 (en) 2003-06-30 2006-05-11 엔드웨이브 코포레이션 Transmission line transition
US7277770B2 (en) 2003-07-15 2007-10-02 Huang Wen C Direct write process and apparatus
JP2005050969A (en) * 2003-07-31 2005-02-24 Cluster Technology Co Ltd Electric circuit component and its producing process
TWI234258B (en) 2003-08-01 2005-06-11 Advanced Semiconductor Eng Substrate with reinforced structure of contact pad
US7202155B2 (en) 2003-08-15 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing wiring and method for manufacturing semiconductor device
US7612443B1 (en) 2003-09-04 2009-11-03 University Of Notre Dame Du Lac Inter-chip communication
EP1517166B1 (en) 2003-09-15 2015-10-21 Nuvotronics, LLC Device package and methods for the fabrication and testing thereof
KR100538470B1 (en) 2003-09-15 2005-12-23 한국과학기술원 Transmission line of coaxial type using dielectric film and formation method thereof and packaging method
WO2005089090A2 (en) 2003-10-14 2005-09-29 North Dakota State University Direct write and freeform fabrication apparatus and method
DE602004029092D1 (en) 2003-12-05 2010-10-21 Dexcom Inc CALIBRATION METHODS FOR A CONTINUOUSLY WORKING ANALYTIC SENSOR
KR100555680B1 (en) * 2003-12-17 2006-03-03 삼성전자주식회사 Method for fabricating various height metal structure
US7116190B2 (en) 2003-12-24 2006-10-03 Molex Incorporated Slot transmission line patch connector
GB0400982D0 (en) 2004-01-16 2004-02-18 Fujifilm Electronic Imaging Method of forming a pattern on a substrate
US20050156693A1 (en) 2004-01-20 2005-07-21 Dove Lewis R. Quasi-coax transmission lines
US7645940B2 (en) 2004-02-06 2010-01-12 Solectron Corporation Substrate with via and pad structures
US7109822B2 (en) 2004-02-26 2006-09-19 Bae Systems Information And Electronic Systems Integration Inc. Method and apparatus for rapid prototyping of monolithic microwave integrated circuits
US7030712B2 (en) 2004-03-01 2006-04-18 Belair Networks Inc. Radio frequency (RF) circuit board topology
US7662731B2 (en) 2004-03-12 2010-02-16 Japan Science And Technology Agency Quantum dot manipulating method and quantum dot production/manipulation apparatus
WO2005091998A2 (en) 2004-03-19 2005-10-06 Neoconix, Inc. Electrical connector in a flexible host
US7005371B2 (en) 2004-04-29 2006-02-28 International Business Machines Corporation Method of forming suspended transmission line structures in back end of line processing
US7128604B2 (en) 2004-06-14 2006-10-31 Corning Gilbert Inc. High power coaxial interconnect
US6971913B1 (en) 2004-07-01 2005-12-06 Speed Tech Corp. Micro coaxial connector
TWI237886B (en) 2004-07-06 2005-08-11 Himax Tech Inc Bonding pad and chip structure
US7291380B2 (en) 2004-07-09 2007-11-06 Hewlett-Packard Development Company, L.P. Laser enhanced plating for forming wiring patterns
US7084722B2 (en) 2004-07-22 2006-08-01 Northrop Grumman Corp. Switched filterbank and method of making the same
US7625198B2 (en) 2004-08-11 2009-12-01 Cornell Research Foundation, Inc. Modular fabrication systems and methods
US7235431B2 (en) 2004-09-02 2007-06-26 Micron Technology, Inc. Methods for packaging a plurality of semiconductor dice using a flowable dielectric material
US7077697B2 (en) 2004-09-09 2006-07-18 Corning Gilbert Inc. Snap-in float-mount electrical connector
CA2479986A1 (en) 2004-09-14 2006-03-14 Vincent F. Treanton Manufacture of optical wave guide by laser ablation
US7165974B2 (en) 2004-10-14 2007-01-23 Corning Gilbert Inc. Multiple-position push-on electrical connector
TWI287634B (en) 2004-12-31 2007-10-01 Wen-Chang Dung Micro-electromechanical probe circuit film, method for making the same and applications thereof
US7217156B2 (en) 2005-01-19 2007-05-15 Insert Enterprise Co., Ltd. RF microwave connector for telecommunication
EP1859955A1 (en) 2005-03-14 2007-11-28 Konica Minolta Medical & Graphic, Inc. Lithographic printing plate making method and image exposing system
US7555309B2 (en) 2005-04-15 2009-06-30 Evertz Microsystems Ltd. Radio frequency router
US7615476B2 (en) 2005-06-30 2009-11-10 Intel Corporation Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages
US7972650B1 (en) 2005-07-13 2011-07-05 Nscrypt, Inc. Method for manufacturing 3D circuits from bare die or packaged IC chips by microdispensed interconnections
DE102005033379A1 (en) * 2005-07-16 2007-01-18 Degussa Ag Use of cyclic oligomers in a molding process and molding made by this process
USD530674S1 (en) 2005-08-11 2006-10-24 Hon Hai Precision Ind. Co., Ltd. Micro coaxial connector
WO2007038950A1 (en) 2005-09-28 2007-04-12 Stichting Dutch Polymer Institute Method for generation of metal surface structures and apparatus therefor
JP2007115771A (en) 2005-10-18 2007-05-10 Nec System Technologies Ltd Lsi pin
JP4527646B2 (en) 2005-10-19 2010-08-18 日本電気株式会社 Electronic equipment
US20070105395A1 (en) 2005-11-04 2007-05-10 Edward Kinzel Laser functionalization and patterning of thick-film inks
US7658831B2 (en) 2005-12-21 2010-02-09 Formfactor, Inc Three dimensional microstructures and methods for making three dimensional microstructures
KR101372963B1 (en) 2006-01-31 2014-03-11 히타치 긴조쿠 가부시키가이샤 Laminated component and module using same
JP4901253B2 (en) * 2006-03-20 2012-03-21 独立行政法人理化学研究所 Manufacturing method of three-dimensional metal microstructure
EP1912244A1 (en) 2006-10-09 2008-04-16 Carol Ann Wedding Positive column tubular PDP
CN101274736A (en) 2006-12-30 2008-10-01 罗门哈斯电子材料有限公司 Three-dimensional microstructures and methods of formation thereof
CN101274734A (en) 2006-12-30 2008-10-01 罗门哈斯电子材料有限公司 Three-dimensional microstructures and methods of formation thereof
JP2008188756A (en) 2006-12-30 2008-08-21 Rohm & Haas Electronic Materials Llc Three-dimensional microstructure and method of formation thereof
US7532163B2 (en) 2007-02-13 2009-05-12 Raytheon Company Conformal electronically scanned phased array antenna and communication system for helmets and other platforms
US7755174B2 (en) 2007-03-20 2010-07-13 Nuvotonics, LLC Integrated electronic components and methods of formation thereof
EP1973189B1 (en) 2007-03-20 2012-12-05 Nuvotronics, LLC Coaxial transmission line microstructures and methods of formation thereof
US7683842B1 (en) 2007-05-30 2010-03-23 Advanced Testing Technologies, Inc. Distributed built-in test and performance monitoring system for electronic surveillance
US20090004385A1 (en) * 2007-06-29 2009-01-01 Blackwell James M Copper precursors for deposition processes
EP2188114B1 (en) * 2007-07-25 2018-09-12 Stratasys Ltd. Solid freeform fabrication using a plurality of modeling materials
US8264297B2 (en) 2007-08-29 2012-09-11 Skyworks Solutions, Inc. Balun signal splitter
US7920042B2 (en) 2007-09-10 2011-04-05 Enpirion, Inc. Micromagnetic device and method of forming the same
TWI358799B (en) 2007-11-26 2012-02-21 Unimicron Technology Corp Semiconductor package substrate and method of form
US8188932B2 (en) 2007-12-12 2012-05-29 The Boeing Company Phased array antenna with lattice transformation
JP4506824B2 (en) 2007-12-13 2010-07-21 富士ゼロックス株式会社 Collected developer conveying device and image forming apparatus
US8242593B2 (en) 2008-01-27 2012-08-14 International Business Machines Corporation Clustered stacked vias for reliable electronic substrates
US7619441B1 (en) 2008-03-03 2009-11-17 Xilinx, Inc. Apparatus for interconnecting stacked dice on a programmable integrated circuit
WO2009119061A1 (en) 2008-03-27 2009-10-01 パナソニック株式会社 Printing apparatus and printing method using the same
US7575474B1 (en) 2008-06-10 2009-08-18 Harris Corporation Surface mount right angle connector including strain relief and associated methods
US8319344B2 (en) 2008-07-14 2012-11-27 Infineon Technologies Ag Electrical device with protruding contact elements and overhang regions over a cavity
US20100015850A1 (en) 2008-07-15 2010-01-21 Casey Roy Stein Low-profile mounted push-on connector
US8996155B2 (en) 2008-07-25 2015-03-31 Cornell University Apparatus and methods for digital manufacturing
US8067305B2 (en) 2008-09-03 2011-11-29 Ultratech, Inc. Electrically conductive structure on a semiconductor substrate formed from printing
TWI393490B (en) 2008-12-31 2013-04-11 Ind Tech Res Inst Structure of multiple coaxial leads within single via in substrate and manufacturing method thereof
US9190201B2 (en) 2009-03-04 2015-11-17 Qualcomm Incorporated Magnetic film enhanced inductor
US8207261B2 (en) * 2009-03-25 2012-06-26 E.I. Du Pont De Nemours And Company Plastic articles, optionally with partial metal coating
EP2244291A1 (en) 2009-04-20 2010-10-27 Nxp B.V. Multilevel interconnection system
EP2330875A1 (en) 2009-07-15 2011-06-08 Stichting Dutch Polymer Institute Method for generating photonically treated printed structures on surfaces, apparatus, and use thereof
JP2011070944A (en) * 2009-09-25 2011-04-07 Sekisui Chem Co Ltd Manufacturing method for conductive particulates, and the conductive particulates
EP2482981A1 (en) 2009-09-28 2012-08-08 Universitat Rovira I Virgili Screen printed functional microsystems
US20110123783A1 (en) * 2009-11-23 2011-05-26 David Sherrer Multilayer build processses and devices thereof
JP5639194B2 (en) 2010-01-22 2014-12-10 ヌボトロニクス,エルエルシー Thermal control
US8917150B2 (en) 2010-01-22 2014-12-23 Nuvotronics, Llc Waveguide balun having waveguide structures disposed over a ground plane and having probes located in channels
TWM389380U (en) 2010-05-19 2010-09-21 Advanced Connectek Inc Miniature high frequency plug connector
US20110304520A1 (en) 2010-06-11 2011-12-15 Illinois Tool Works Inc. Method of Manufacturing and Operating an Antenna Arrangement for a Communication Device
FR2965063B1 (en) 2010-09-21 2012-10-12 Thales Sa METHOD FOR EXTENDING THE TIME OF ILLUMINATION OF TARGETS BY SECONDARY RADAR
WO2012058278A2 (en) * 2010-10-27 2012-05-03 Eugene Giller Process and apparatus for fabrication of three-dimensional objects
EP3034282A1 (en) 2010-11-28 2016-06-22 Stratasys Ltd. System and method for additive manufacturing of an object
US8814601B1 (en) 2011-06-06 2014-08-26 Nuvotronics, Llc Batch fabricated microconnectors
US8786515B2 (en) 2011-08-30 2014-07-22 Harris Corporation Phased array antenna module and method of making same
US8641428B2 (en) 2011-12-02 2014-02-04 Neoconix, Inc. Electrical connector and method of making it
US9325044B2 (en) 2013-01-26 2016-04-26 Nuvotronics, Inc. Multi-layer digital elliptic filter and method
US9306254B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Substrate-free mechanical interconnection of electronic sub-systems using a spring configuration
US9778314B2 (en) 2014-08-25 2017-10-03 Teradyne, Inc. Capacitive opens testing of low profile components

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
US11426818B2 (en) 2018-08-10 2022-08-30 The Research Foundation for the State University Additive manufacturing processes and additively manufactured products
DE102019210295A1 (en) * 2019-07-11 2021-01-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Process for coating a surface of a substrate by laser deposition welding
EP3878629A1 (en) * 2020-03-11 2021-09-15 Palo Alto Research Center Incorporated Additive manufacturing compositions and methods for the same
US11446864B2 (en) * 2020-03-11 2022-09-20 Palo Alto Research Center Incorporated Additive manufacturing compositions and methods for the same
EP4009439A1 (en) * 2020-12-04 2022-06-08 HENSOLDT Sensors GmbH A waveguide and method for the additive production of a waveguide
WO2022173541A1 (en) * 2021-02-15 2022-08-18 Raytheon Missles & Defense (Rmd) Waveguide fence support

Also Published As

Publication number Publication date
EP2731783A4 (en) 2016-03-09
EP2731783A1 (en) 2014-05-21
JP2014527474A (en) 2014-10-16
US9993982B2 (en) 2018-06-12
JP2018149813A (en) 2018-09-27
JP6335782B2 (en) 2018-05-30
KR101982887B1 (en) 2019-05-27
WO2013010108A1 (en) 2013-01-17
US20140231266A1 (en) 2014-08-21
KR20140038483A (en) 2014-03-28

Similar Documents

Publication Publication Date Title
US20180319108A1 (en) Methods of fabricating electronic and mechanical structures
US10748867B2 (en) Extrusion-based additive manufacturing system for 3D structural electronic, electromagnetic and electromechanical components/devices
EP3209488B1 (en) Fabrication of intra-structure conductive traces and interconnects for three-dimensional manufactured structures
CA2846461C (en) Layered manufacturing of free-form multi-material micro-components
KR101038351B1 (en) Circuit board and method for manufacturing the same
US7229542B2 (en) Methods of and apparatus for molding structures using sacrificial metal patterns
KR101304067B1 (en) Electrically conductive structure on a semiconductor substrate formed from printing
US20050032375A1 (en) Methods for electrochemically fabricating structures using adhered masks, incorporating dielectric sheets, and/or seed layers that are partially removed via planarization
US20180043618A1 (en) Embedding apparatus and method utilizing additive manufacturing
JP2009509048A (en) Method for partially metallizing the product
Perera et al. Recent progress in functionalized plastic 3D printing in creation of metallized architectures
US20150307997A1 (en) Methods for Fabricating Metal Structures Incorporating Dielectric Sheets
Wang et al. Enabling 3D multilayer electronics through the hybrid of vat photopolymerization and laser-activated selective metallization
CN101730397B (en) Structure and production method of multilayer stereo circuit
JPH04309287A (en) Manufacture of three-dimensional circuit board
Mishra et al. Additive Manufacturing (3D Printing): A Review on the Micro Fabrication Methods
US20210023750A1 (en) Hybrid molding with selective release additive material systems
Xiao Metallization Process for 3D Printed Electronics: from i3DP II to 3D Co-printing Technology
CN116277953A (en) Mixed additive manufacturing device of three-dimensional structure electronic device and working method thereof
US20180343749A1 (en) Multi-tier conductive circuits free of supporting substrate with intermediary devices on a plurality of tiers, detachable production platform for additive manufacturing, solder-dispensers and device-dispensers
Lazarus Metallization of 3D-Printed Devices

Legal Events

Date Code Title Description
AS Assignment

Owner name: NUVOTRONICS, INC, VIRGINIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SHERRER, DAVID W;REEL/FRAME:046888/0936

Effective date: 20140327

AS Assignment

Owner name: NUVOTRONICS, INC, VIRGINIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CARDWELL, DARA;REEL/FRAME:046901/0025

Effective date: 20140430

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

AS Assignment

Owner name: CUBIC CORPORATION, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NUVOTRONICS, INC.;REEL/FRAME:048698/0301

Effective date: 20190314

AS Assignment

Owner name: CUBIC CORPORATION, CALIFORNIA

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE INSIDE THE ASSIGNMENT DOCUMENTATION PREVIOUSLY RECORDED AT REEL: 048698 FRAME: 0301. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:NUVOTRONICS, INC.;REEL/FRAME:048843/0801

Effective date: 20190314

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION