CN111739797A - Method for depositing metal platinum film pattern on sapphire substrate, product and application - Google Patents
Method for depositing metal platinum film pattern on sapphire substrate, product and application Download PDFInfo
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- CN111739797A CN111739797A CN202010758008.XA CN202010758008A CN111739797A CN 111739797 A CN111739797 A CN 111739797A CN 202010758008 A CN202010758008 A CN 202010758008A CN 111739797 A CN111739797 A CN 111739797A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
Abstract
The invention discloses a method for depositing a metal platinum film pattern on a sapphire substrate, a product and application. The invention belongs to the technical field of thin film integrated circuit. The process of the invention aims to deposit a metal platinum film pattern on the surface of the sapphire substrate, and the metal platinum film pattern is used as an interconnecting wire, a welding area and a capacitor electrode in a thin film integrated circuit, so that the reliability of electronic interconnection is improved. The invention adopts the methods of pre-microetching treatment, printing chemical platinum plating solution, laser scanning platinum surface deposition and heat treatment, has the advantages of good platinum plating quality, high production efficiency, raw material saving, environmental protection, small harm to human health and the like, and fully meets the requirements of thin film integrated circuits.
Description
Technical Field
The invention belongs to the technical field of thin film integrated circuits, and particularly relates to a method for depositing a metal platinum thin film pattern on a sapphire substrate, a product and application.
Background
With the development of society towards high informatization and intellectualization, the requirements of various application fields on high performance, miniaturization and integration of optical/electric devices are higher and higher. In recent yearsThe breakthrough of the optical/electronic technology in new materials, new principles and new technologies provides a new way for realizing new functional optical/electronic devices. The thin film integrated circuit is used as an important integration technology of elements such as a thin film transistor, a diode, a resistor, a capacitor, an inductor and the like, has the characteristics of wide element parameter range, high precision, excellent temperature frequency characteristic and the like, and is widely applied. Sapphire (Al)2O3) Belongs to corundum group minerals, is common coordination type oxide crystals, has Mohs hardness as high as 9, and is second to diamond. The sapphire has good chemical stability, excellent high-temperature resistance, large heat conductivity coefficient, low preparation cost and mature process, and is an important substrate material of a thin film integrated circuit.
There are mainly four types of thin film in thin film integrated circuits: conductive, resistive, dielectric, and insulating films. The conductive film is used as an interconnection line, a welding area and a capacitor electrode, and is required to have good physical and chemical stability, high conductivity, strong adhesion and the like. Platinum is a transition metal, has good ductility, excellent heat conduction and electric conduction performance, and extremely stable chemical properties, and is an important conductive circuit and electrode material in a thin film integrated circuit.
At present, the preparation method of the metal platinum film mainly comprises an evaporation method, chemical vapor deposition, molecular beam epitaxy, a sputtering method and the like. Yoshitada Murata et al, university of Electrical and communications, Japan [ Surface Science, 2001, 493: 114-119]by tungsten filament evaporation on alpha-Al2O3A single-layer film of platinum metal is deposited on a substrate; picrony et al at university of China [ noble metals, 2003, 24, 21-25]And Li Ying et al (rare metal materials and engineering, 2016, 45: 445-448) of Kunming theory of technology university]With platinum acetylacetonate and cyclopentadienyl trimethyl platinum iodide (CpPt (Me), respectively3) Preparing a metal platinum film on a substrate of molybdenum, nickel-based superalloy and the like by adopting a metal organic compound chemical vapor deposition method for depositing source substances; t. Wagner team of Mapu laboratories Germany [ Journal of Crystal Growth, 2002, 234: 561-568]Depositing a metal platinum film on a sapphire substrate etched in advance by adopting a molecular formula epitaxy method; wang national military of the university of West's traffic [ materials guide, 2019, 33(Z2): 56-60]Using radio frequenciesThe metal platinum film is prepared on the sapphire substrate by a magnetron sputtering method, and the electrical property of the film is further improved by an annealing process. The metal platinum film prepared by the method has the advantages of controllable thickness, uniform and compact plating layer, high circuit/pattern precision and the like, but has the defects of expensive raw materials and process equipment and high production cost.
Electroless plating is an important surface treatment technique in which metal ions are reduced to a metal plating layer in a solution using a reducing agent. The technology has simple process, energy conservation and environmental protection, and is increasingly concerned by people in the aspects of decorative plating, protective plating, functional plating and the like. Invention patent CN 103319208A' Al2O3Ceramic substrate metallization process "describes a process in which a ceramic substrate is subjected to roughening, sensitizing (stannous chloride), activating (colloidal palladium) and electroless copper plating, in which Al is deposited2O3The ceramic substrate successfully realizes the metallization of the copper plating layer, and further adopts the electro-coppering process to increase the thickness of the plating layer. Obviously, the metal coating is deposited on the substrate by adopting a chemical plating technology, and the patterning of the metal coating can be realized only by exposing and developing the photosensitive resist, so that the working procedures are increased, and the production cost is greatly increased.
Therefore, there is a need in the art to develop a new process for preparing a platinum film, which can effectively overcome the defect of high cost of preparing a platinum film in the prior art, and the preparation method is simple and can be used for industrial production.
Disclosure of Invention
In view of the problems of the prior art, the present invention aims to provide a method for depositing a platinum film pattern on a sapphire substrate, a product and a use thereof. The method is simple, can realize industrial production, is environment-friendly, and effectively saves the preparation cost of the metal platinum film.
In order to achieve the purpose, the invention adopts the following technical scheme:
one of the objects of the present invention is to provide a method for depositing a platinum thin film pattern on a sapphire substrate, the method comprising:
and sequentially carrying out the processes of micro-etching treatment, printing chemical platinum plating solution and laser scanning on the surface of the sapphire substrate to obtain a metal platinum film pattern.
According to the invention, firstly, chemical platinum plating solution is formed on a sapphire substrate which is subjected to micro-etching treatment in advance through a printing technology, and the chemical platinum plating solution is scanned through carbon dioxide laser, so that the formation of a metal platinum pattern film is realized. The method not only reduces the chemical plating process, but also does not need to heat the plating solution, and simultaneously greatly reduces the consumption of the plating solution, thereby better saving the cost.
The invention adopts the laser-assisted chemical platinum plating technology, avoids the introduction of impurities into the plating layer by the sensitization/activation process, and realizes the structure of the high-purity platinum film.
Preferably, the microetching process comprises: and treating the surface of the sapphire substrate by using the microetching treatment solution at room temperature.
Preferably, the microetching treatment time is 1-5 min, such as 1.5min, 2min, 2.5min, 3min, 3.5min, 4min or 4.5 min.
Preferably, the composition of each 1L of the microetching treatment solution comprises the following components:
2-10 g of ammonia water
2-10 g of hydrogen peroxide
The balance of water;
the mass of the ammonia water is 2-10 g, such as 3g, 4g, 5g, 6g, 7g, 8g or 9 g; the hydrogen peroxide is 2-10 g, such as 3g, 4g, 5g, 6g, 7g, 8g or 9 g.
The selection of the microetching treatment liquid ensures that the surface of the sapphire substrate is uniformly roughened and has small roughness, is beneficial to the subsequent laser chemical plating and heat treatment, and realizes the metallization pattern of the sapphire substrate.
Preferably, the concentration of the ammonia water is 20 to 30wt%, such as 22wt%, 24wt%, 25wt%, 26wt%, or 28 wt%.
Preferably, the concentration of the hydrogen peroxide is 25 to 35wt%, such as 26wt%, 27wt%, 28wt%, 29wt%, 30wt%, 31wt%, 32wt% or 34 wt%.
Preferably, the water is deionized water.
Preferably, the process of printing the electroless platinum plating solution comprises: and printing chemical platinum plating solution on the surface of the sapphire substrate after the microetching treatment by adopting a liquid printer.
Preferably, the viscosity of the electroless platinum plating solution is 10-30 cp, such as 12cp, 15cp, 18cp, 20cp, 22cp, 25cp or 28 cp.
The viscosity of the chemical platinizing plating solution is adjusted by sodium carboxymethyl cellulose and water.
Preferably, the composition of each 1L of the electroless platinum plating solution comprises the following components:
2-20 g of chloroplatinic acid
Ethylene diamine 15-50 g
10-40 g of sodium hydroxide
1-5 g hydrazine hydrate
Sodium carboxymethyl cellulose and water in balance.
The mass of the chloroplatinic acid is 2-20 g, such as 4g, 5g, 6g, 8g, 10g, 12g, 15g, 16g or 18 g; the mass of the ethylenediamine is 15-50 g, such as 18g, 20g, 22g, 25g, 28g, 30g, 32g, 35g, 40g, 42g, 45g or 48 g; the mass of the sodium hydroxide is 10-40 g, such as 12g, 15g, 18g, 20g, 22g, 25g, 28g, 30g, 32g, 35g or 38 g; the mass of the hydrazine hydrate is 1-5 g, such as 1.5g, 2g, 2.5g, 3g, 3.5g, 4g or 4.5 g.
The viscosity regulator (carboxymethyl cellulose sodium salt) is introduced into the chemical platinum plating solution, so that when a plating solution pattern is printed on a sapphire substrate, the diffusion of the plating solution is avoided, and the utilization rate of the plating solution is effectively improved.
Preferably, the laser scanning process includes: and performing laser scanning on the printed chemical platinum plating solution by adopting a carbon dioxide laser according to a designed pattern, so that a metal platinum film pattern is deposited and formed on the sapphire substrate.
After laser scanning, a reducing agent in the chemical platinum plating solution converts platinum ions into metal platinum, and the obtained metal platinum film pattern is a preset pattern.
Preferably, after the laser scanning, a heat treatment process is further included.
The heat treatment process can improve the adhesive force of the graphic platinum film, and simultaneously can ensure the consistency with the designed graphic due to the extremely low migration characteristic of the metal platinum.
Preferably, the temperature of the heat treatment is 300 to 500 ℃, for example, 320 ℃, 350 ℃, 380 ℃, 400 ℃, 420 ℃, 450 ℃ or 480 ℃.
Preferably, the time of the heat treatment is 0.5-5 h, such as 1h, 1.5h, 2h, 2.5h, 3h, 3.5h, 4h or 4.5 h.
Preferably, the atmosphere of the heat treatment is a nitrogen atmosphere or an argon atmosphere.
Preferably, before the microetching treatment, a process of cleaning the sapphire substrate is further included.
Preferably, after the microetching treatment and before printing the electroless platinum plating solution, the method further comprises the following steps: cleaning and/or nitrogen blow-drying.
Preferably, after the laser scanning and before the heat treatment, a cleaning process is further included.
It is a second object of the present invention to provide a platinum metal thin film pattern prepared by the method of the first object.
It is a third object of the present invention to provide a use of the platinum metal thin film pattern according to the second object for thin film integrated circuit field and/or capacitor field.
Preferably, the metal platinum thin film pattern is used for an interconnection line and/or a land in a thin film integrated circuit.
Preferably, the metal platinum thin film pattern is used for an electrode of a capacitor.
Compared with the prior art, the invention has the following beneficial effects:
(1) the process method adopted by the invention ensures that the surface of the sapphire substrate is uniformly roughened and has small roughness, and the metalized pattern of the sapphire substrate is realized through subsequent laser chemical plating and heat treatment.
(2) According to the invention, the viscosity regulator is introduced into the chemical platinum plating solution, so that when a plating solution pattern is printed on the sapphire substrate, the diffusion of the plating solution is avoided, and the utilization rate of the plating solution is effectively improved.
(3) The invention adopts the laser-assisted chemical platinum plating technology, avoids the introduction of impurities into the plating layer by the sensitization/activation process, and realizes the structure of the high-purity platinum film.
(4) The invention can realize the improvement of the adhesive force of the graphic platinum film through the heat treatment process, and simultaneously can ensure the consistency with the designed graphic due to the extremely low migration characteristic of the metal platinum.
(5) The invention has simple process and low cost, and can be used for industrial production.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
A preparation method of a metal platinum film pattern comprises the following steps:
sequentially carrying out oil removal, hot water washing, deionized water washing, micro-etching treatment, hot water washing, ultrasonic washing, absolute ethyl alcohol washing, nitrogen blow-drying, printing of chemical platinum plating solution, carbon dioxide laser scanning, hot water washing, deionized water washing, absolute ethyl alcohol washing, nitrogen blow-drying and heat treatment on the sapphire substrate to form a metal platinum film pattern on the surface of the sapphire substrate;
wherein the microetching treatment is: the sapphire substrate is processed for 2min at room temperature, and 1L of microetching treatment solution contains:
ammonia (analytically pure, 25 wt%): 10g
Hydrogen peroxide (analytically pure, 30 wt%): 2g
Deionized water: the balance;
the printing chemical platinizing plating solution is used for printing patterns at room temperature, and the specific process comprises the following steps: printing chemical platinum plating solution on the surface of the sapphire substrate after the microetching treatment by adopting a liquid printer at room temperature, wherein 1L of the plating solution contains:
chloroplatinic acid: 2g
Ethylene diamine: 40g of
Sodium hydroxide: 40g of
Hydrazine hydrate: 1g
The viscosity of the plating solution is adjusted by sodium carboxymethyl cellulose: 10cp
Deionized water: the balance;
wherein the heat treatment is: and (3) carrying out heat treatment for 5h at 300 ℃ under the protection of argon to form a metal platinum film with high adhesive force and a thickness of 23 nm.
Example 2
Sequentially carrying out oil removal, hot water washing, deionized water washing, micro-etching treatment, hot water washing, ultrasonic washing, absolute ethyl alcohol washing, nitrogen blow-drying, printing of chemical platinum plating solution, carbon dioxide laser scanning, hot water washing, deionized water washing, absolute ethyl alcohol washing, nitrogen blow-drying and heat treatment on the sapphire substrate to form a metal platinum film pattern on the surface of the sapphire substrate;
wherein the microetching treatment is: the sapphire substrate is processed for 5min at room temperature, and 1L of microetching treatment solution contains:
ammonia (analytically pure, 25 wt%): 10g
Hydrogen peroxide (analytically pure, 30 wt%): 2g
Deionized water: the balance;
the printing chemical platinizing plating solution is used for printing patterns at room temperature, and the specific process comprises the following steps: printing chemical platinum plating solution on the surface of the sapphire substrate after the microetching treatment by adopting a liquid printer at room temperature, wherein 1L of the plating solution contains:
chloroplatinic acid: 20g of
Ethylene diamine: 15g of
Sodium hydroxide: 10g
Hydrazine hydrate: 5g
Adjusting the viscosity of the plating solution by using sodium carboxymethyl cellulose: 30cp
Deionized water: the balance;
wherein the heat treatment is: and carrying out heat treatment for 0.5h at 500 ℃ under the protection of nitrogen to form a metal platinum film with high adhesive force and a thickness of 78 nm.
Example 3
Sequentially carrying out oil removal, hot water washing, deionized water washing, micro-etching treatment, hot water washing, ultrasonic washing, absolute ethyl alcohol washing, nitrogen blow-drying, printing of chemical platinum plating solution, carbon dioxide laser scanning, hot water washing, deionized water washing, absolute ethyl alcohol washing, nitrogen blow-drying and heat treatment on the sapphire substrate to form a metal platinum film pattern on the surface of the sapphire substrate;
wherein the microetching treatment is: the sapphire substrate is processed for 5min at room temperature, and 1L of microetching treatment solution contains:
ammonia (analytically pure, 25 wt%): 5g
Hydrogen peroxide (analytically pure, 30 wt%): 5g
Deionized water: the balance;
the printing chemical platinizing plating solution is used for printing patterns at room temperature, and the specific process comprises the following steps: printing chemical platinum plating solution on the surface of the sapphire substrate after the microetching treatment by adopting a liquid printer at room temperature, wherein 1L of the plating solution contains:
chloroplatinic acid: 10g
Ethylene diamine: 25g of
Sodium hydroxide: 25g of
Hydrazine hydrate: 2.5g
Adjusting the viscosity of the plating solution by using sodium carboxymethyl cellulose: 20cp
Deionized water: the balance;
wherein the heat treatment is: and (3) carrying out heat treatment for 2h at 400 ℃ under the protection of argon to form a platinum film with high adhesive force and a thickness of 58 nm.
Example 4
Sequentially carrying out oil removal, hot water washing, deionized water washing, micro-etching treatment, hot water washing, ultrasonic washing, absolute ethyl alcohol washing, nitrogen blow-drying, printing of chemical platinum plating solution, carbon dioxide laser scanning, hot water washing, deionized water washing, absolute ethyl alcohol washing, nitrogen blow-drying and heat treatment on the sapphire substrate to form a metal platinum film pattern on the surface of the sapphire substrate;
wherein the microetching treatment is: the sapphire substrate is processed for 3min at room temperature, and 1L of microetching treatment solution contains:
ammonia (analytically pure, 25%): 3g
Hydrogen peroxide (analytically pure, 30%): 3g
Deionized water: the balance;
the printing chemical platinizing plating solution is used for printing patterns at room temperature, and the specific process comprises the following steps: printing chemical platinum plating solution on the surface of the sapphire substrate after the microetching treatment by adopting a liquid printer at room temperature, wherein 1L of the plating solution contains:
chloroplatinic acid: 8g
Ethylene diamine: 20g of
Sodium hydroxide: 30g of
Hydrazine hydrate: 3g
Adjusting the viscosity of the plating solution by using sodium carboxymethyl cellulose: 25cp
Deionized water: the balance;
wherein the heat treatment is: and carrying out heat treatment for 3h at 350 ℃ under the protection of nitrogen to form a metal platinum film with high adhesive force and a thickness of 62 nm.
Example 5
Sequentially carrying out oil removal, hot water washing, deionized water washing, micro-etching treatment, hot water washing, ultrasonic washing, absolute ethyl alcohol washing, nitrogen blow-drying, printing of chemical platinum plating solution, carbon dioxide laser scanning, hot water washing, deionized water washing, absolute ethyl alcohol washing, nitrogen blow-drying and heat treatment on the sapphire substrate to form a metal platinum film pattern on the surface of the sapphire substrate;
wherein, the microetching treatment comprises the following steps: the sapphire substrate is processed for 3min at room temperature, and 1L of microetching treatment solution contains:
ammonia (analytically pure, 25%): 8g
Hydrogen peroxide (analytically pure, 30%): 4g
Deionized water: the balance;
the printing chemical platinizing plating solution is used for printing patterns at room temperature, and the specific process comprises the following steps: printing chemical platinum plating solution on the surface of the sapphire substrate after the microetching treatment by adopting a liquid printer at room temperature, wherein 1L of the plating solution contains:
chloroplatinic acid: 8g
Ethylene diamine: 40g of
Sodium hydroxide: 30g of
Hydrazine hydrate: 4g
Adjusting the viscosity of the plating solution by using sodium carboxymethyl cellulose: 10cp
Deionized water: the balance;
wherein the heat treatment is: and (3) carrying out heat treatment for 1h at 450 ℃ under the protection of argon to form a metal platinum film with high adhesive force and 76nm thickness.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (21)
1. A method of depositing a platinum film pattern on a sapphire substrate, the method comprising:
sequentially carrying out the processes of microetching treatment, printing chemical platinum plating solution and laser scanning on the surface of the sapphire substrate to obtain a metal platinum film pattern;
the composition of each 1L of the microetching treatment solution comprises the following components:
2-10 g of ammonia water
2-10 g of hydrogen peroxide
The balance of water.
2. The method of claim 1, wherein the microetching process comprises: and treating the surface of the sapphire substrate by using the microetching treatment solution at room temperature.
3. The method according to claim 1, wherein the microetching treatment is carried out for 1 to 5 min.
4. The method according to claim 1, wherein the concentration of the aqueous ammonia is 20 to 30 wt%.
5. The method according to claim 1, wherein the concentration of the hydrogen peroxide is 25 to 35 wt%.
6. The method of claim 1, wherein the water is deionized water.
7. The method of claim 1, wherein printing the electroless platinum plating solution comprises: and printing chemical platinum plating solution on the surface of the sapphire substrate after the microetching treatment by adopting a liquid printer.
8. The method according to claim 1, wherein the viscosity of the electroless platinum plating solution is 10 to 30 cp.
9. The method of claim 1, wherein the composition of each 1L of the electroless platinum plating bath comprises the following components:
2-20 g of chloroplatinic acid
Ethylene diamine 15-50 g
10-40 g of sodium hydroxide
1-5 g hydrazine hydrate
Sodium carboxymethyl cellulose and water in balance.
10. The method of claim 1, wherein the laser scanning comprises: and performing laser scanning on the printed chemical platinum plating solution by adopting a carbon dioxide laser according to a designed pattern, so that a metal platinum film pattern is deposited and formed on the sapphire substrate.
11. The method of claim 1, wherein the laser scanning is followed by a heat treatment process.
12. The method of claim 11, wherein the heat treatment temperature is 300 to 500 ℃.
13. The method of claim 11, wherein the heat treatment time is 0.5 to 5 hours.
14. The method of claim 11, wherein an atmosphere of the heat treatment is a nitrogen atmosphere or an argon atmosphere.
15. The method of claim 1, wherein prior to the microetching, further comprising a process of cleaning the sapphire substrate.
16. The method of claim 1, wherein after the microetching treatment and before printing the electroless platinum plating solution, further comprising: cleaning and/or nitrogen blow-drying.
17. The method of claim 11, wherein the laser scanning is followed by a cleaning process prior to the heat treatment.
18. A platinum metal film pattern prepared by the method of any one of claims 1 to 17.
19. Use of the platinum metal film pattern according to claim 18, wherein the platinum metal film pattern is used in the field of thin film integrated circuits and/or the field of capacitors.
20. Use of the platinum metal film pattern according to claim 19, wherein said platinum metal film pattern is used for interconnect lines and/or lands in thin film integrated circuits.
21. The use of the metallic platinum film pattern according to claim 19, wherein the metallic platinum film pattern is used for an electrode of a capacitor.
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