JP2002241951A - Method for depositing electroless zinc oxide film - Google Patents

Method for depositing electroless zinc oxide film

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Publication number
JP2002241951A
JP2002241951A JP2001039979A JP2001039979A JP2002241951A JP 2002241951 A JP2002241951 A JP 2002241951A JP 2001039979 A JP2001039979 A JP 2001039979A JP 2001039979 A JP2001039979 A JP 2001039979A JP 2002241951 A JP2002241951 A JP 2002241951A
Authority
JP
Japan
Prior art keywords
zinc oxide
oxide film
electroless
electroless zinc
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001039979A
Other languages
Japanese (ja)
Other versions
JP4600623B2 (en
Inventor
Yoshiji Saijo
義司 西條
Katsuhisa Tanabe
克久 田邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
C Uyemura and Co Ltd
Original Assignee
C Uyemura and Co Ltd
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Filing date
Publication date
Application filed by C Uyemura and Co Ltd filed Critical C Uyemura and Co Ltd
Priority to JP2001039979A priority Critical patent/JP4600623B2/en
Publication of JP2002241951A publication Critical patent/JP2002241951A/en
Application granted granted Critical
Publication of JP4600623B2 publication Critical patent/JP4600623B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PROBLEM TO BE SOLVED: To provide a method for depositing an electroless zinc oxide film which has high light transmissivity and low sheet resistance value, and can thickly be deposited. SOLUTION: A nonconducting substrate in which a catalytic layer is formed on the surface of base material is dipped into an electroless zinc oxide plating solution containing a boran based reducing agent, so that an electroless zinc oxide film is deposited. In this method, after the dipping of the substrate into the electroless zinc oxide plating solution containing a boran based reducing agent, the substrate is dipped into a Pd treatment solution obtained by blending water soluble Pd salt and a complexing agent, and is again dipped into the electroless zinc oxide plating solution containing a boran based reducing agent, so that the electroless zinc oxide film is deposited. The zinc oxide film having high light transmissivity and low sheet resistance value can thickly be deposited, and is particularly suitable, e.g. for a transparent electrode of a liquid crystal display or the like.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、光透過性が高く、
シート抵抗値が低く、酸化亜鉛皮膜を厚く形成すること
が可能な無電解酸化亜鉛皮膜の形成方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has a high light transmittance,
The present invention relates to a method for forming an electroless zinc oxide film, which has a low sheet resistance and can form a thick zinc oxide film.

【0002】[0002]

【従来の技術及び発明が解決しようとする課題】近年、
携帯電話やノート型パソコン等の小サイズ化や高性能化
による電子部品回路の高集積化に伴い、原子レベルで欠
陥のない無電解めっきが必要となってきている。非導電
性基板上に無電解めっき技術を用いて回路を形成させる
方法としては、塩化パラジウム等のパラジウム塩と塩酸
とを含む触媒液により、金属パラジウムを被めっき物に
吸着させた後、無電解めっきを施す方法が行われてい
る。この検討として、Pd核の粒子サイズと核密度が無
電解めっき皮膜の初期析出状態に大きく影響を与えるこ
とが本間らによって報告されている[J.Electr
ochem.Soc.,144.4123(199
7)]。しかしながら、従来のPd核は粒子サイズが大
きく、吸着するPd核の核密度も低いものであり、上記
触媒液により処理した後に得られる無電解めっき皮膜
は、初期析出の核密度が低く、初期析出層の多くの欠陥
を含有するものであったため、これに代わる初期析出層
に欠陥のない無電解めっきが望まれている。
2. Description of the Related Art In recent years,
2. Description of the Related Art With the high integration of electronic component circuits due to miniaturization and high performance of mobile phones and notebook computers, electroless plating free of defects at the atomic level has become necessary. As a method for forming a circuit on a non-conductive substrate using an electroless plating technique, metal palladium is adsorbed on a plating object with a catalyst solution containing a palladium salt such as palladium chloride and hydrochloric acid, and then the electroless plating is performed. A plating method has been used. In this study, Honma et al. Reported that the particle size and the nuclear density of Pd nuclei greatly affected the initial deposition state of the electroless plating film [J. Electr
ochem. Soc. , 144.4123 (199
7)]. However, the conventional Pd nucleus has a large particle size and a low nucleus density of the adsorbed Pd nucleus. Since the layer contains many defects, electroless plating without defects in the initial deposition layer is desired instead.

【0003】また、現在、液晶ディスプレイやプラズマ
ディスプレイ等で使用される透明電極等の導電性物品と
してはITO膜が主流である。一般に、この導電性物品
はエッチングによりパターニングされる。しかし、IT
O膜は硬く、エッチングがしにくいという不具合があ
り、このため、マグネトロンスパッタリング法等の乾式
法で作製した酸化亜鉛皮膜を導電性物品として利用する
ことが検討されているが、酸化亜鉛皮膜は一般的に空気
中に放置しておくと比抵抗値が上昇する性質があるた
め、導電性物品としての実用化は困難なものであった。
At present, ITO films are mainly used as conductive articles such as transparent electrodes used in liquid crystal displays and plasma displays. Generally, the conductive article is patterned by etching. But IT
O films are hard and difficult to etch. Therefore, the use of zinc oxide films produced by a dry method such as a magnetron sputtering method as conductive articles has been studied, but zinc oxide films are generally used. It has been difficult to put it into practical use as a conductive article because it has the property of increasing its specific resistance value when left in air.

【0004】更に、マグネトロンスパッタリング法やモ
レキュラービームエピタキシー法等の乾式法による作製
には、製膜雰囲気の制御のための真空排気装置やガス導
入装置、プラズマ発生のための高周波電源や基板加熱装
置及び駆動装置等の大規模な設備が必要である上、バッ
ジ処理であるため、連続処理ができず、生産性が悪く、
生産コストが高いものであった。更には、大面積な基板
や複雑な形状の基板上に均一に製膜するのが困難であっ
た。
[0004] Further, in the case of manufacturing by a dry method such as a magnetron sputtering method or a molecular beam epitaxy method, a vacuum evacuation device and a gas introduction device for controlling a film formation atmosphere, a high frequency power supply and a substrate heating device for generating plasma, and the like. Large-scale equipment such as a drive unit is required, and because of badge processing, continuous processing cannot be performed, resulting in poor productivity.
The production cost was high. Furthermore, it has been difficult to uniformly form a film on a large-sized substrate or a substrate having a complicated shape.

【0005】酸化亜鉛皮膜には、エッチングが容易にで
きるという特徴があるが、上記事情により、なかなか利
用しにくい状況となっている上、水溶液から作製できる
酸化亜鉛皮膜も存在しているが、その透明性及び導電性
が劣るため、利用範囲が限られているものであった。
[0005] The zinc oxide film has a feature that it can be easily etched. However, the above circumstances make it difficult to use the zinc oxide film, and there are zinc oxide films that can be prepared from an aqueous solution. Because of poor transparency and conductivity, the range of use was limited.

【0006】本発明者は、上記要望に応えるべく、緻密
で高密度な欠陥のない無電解めっき皮膜を与えることが
できる高密度Pd核分散層を有する基体を提供すると共
に、無電解法によって作製された上記各特性を十分に利
用できる配向性が制御された酸化亜鉛皮膜及びその作製
方法、並びに、高い導電性及び優れた透明性を持ち、か
つ、大気中へ放置した場合も比抵抗値の変動が少ない水
溶液から作製された酸化亜鉛皮膜を利用した導電性物
品、特に、透明電極、及びその作製方法を提案した(特
願2000−362895号)。
The present inventor has provided a substrate having a high-density Pd nucleus dispersion layer capable of providing a dense, high-density defect-free electroless plating film in order to meet the above-mentioned demands, A zinc oxide film and a method for producing the same, each having a controlled orientation that can sufficiently utilize the above-described properties, and having high conductivity and excellent transparency, and having a specific resistance value even when left in the air. We have proposed a conductive article using a zinc oxide film produced from an aqueous solution with little fluctuation, in particular, a transparent electrode, and a method for producing the same (Japanese Patent Application No. 2000-362895).

【0007】しかしながら、無電解酸化亜鉛めっきは、
膜厚200nm程度で飽和してしまい、シート抵抗値が
1kΩ/□程度になるという場合があった。これは、無
電解酸化亜鉛めっきは自己触媒性がないためであると推
測される。
[0007] However, electroless zinc oxide plating
In some cases, saturation occurs at a film thickness of about 200 nm, and the sheet resistance value becomes about 1 kΩ / □. This is presumed to be because electroless zinc oxide plating has no autocatalytic property.

【0008】本発明は、上記事情に鑑みなされたもの
で、光透過性が高く、シート抵抗値が低く、酸化亜鉛皮
膜を厚く形成することが可能な無電解酸化亜鉛皮膜の形
成方法を提供することを目的とする。
The present invention has been made in view of the above circumstances, and provides a method of forming an electroless zinc oxide film having high light transmittance, low sheet resistance, and capable of forming a thick zinc oxide film. The purpose is to:

【0009】[0009]

【課題を解決するための手段及び発明の実施の形態】本
発明者は、非導電性基材表面上に触媒層が形成された基
体をボラン系還元剤を含有する無電解酸化亜鉛めっき液
に浸漬して無電解酸化亜鉛皮膜を形成するのに際し、新
たな工程として、上記基体をボラン系還元剤を含有する
無電解酸化亜鉛めっき液に浸漬した後、水溶性Pd塩と
錯化剤とを配合してなるPd処理液に浸漬し、再びボラ
ン系還元剤を含有する無電解酸化亜鉛めっき液に浸漬す
る操作を1回以上繰り返して無電解酸化亜鉛皮膜を形成
することにより、酸化亜鉛皮膜を厚く形成でき、光透過
性に優れ、シート抵抗値の低い皮膜になり得ることを知
見し、本発明をなすに至った。
Means for Solving the Problems and Embodiments of the Invention The present inventor has developed a method in which a substrate having a catalyst layer formed on the surface of a non-conductive substrate is converted into an electroless zinc oxide plating solution containing a borane-based reducing agent. In forming a new electroless zinc oxide film by immersion, as a new step, after immersing the substrate in an electroless zinc oxide plating solution containing a borane-based reducing agent, a water-soluble Pd salt and a complexing agent are mixed. The operation of immersing in the formulated Pd treatment solution and immersing it again in the electroless zinc oxide plating solution containing a borane-based reducing agent is repeated one or more times to form an electroless zinc oxide film. The present inventors have found that a film can be formed to be thick, have excellent light transmittance, and have a low sheet resistance value, and have accomplished the present invention.

【0010】即ち、本発明は、下記の無電解酸化亜鉛皮
膜の形成方法を提供する。 請求項1:非導電性基材表面上に触媒層が形成された基
体をボラン系還元剤を含有する無電解酸化亜鉛めっき液
に浸漬して無電解酸化亜鉛皮膜を形成する方法におい
て、上記基体をボラン系還元剤を含有する無電解酸化亜
鉛めっき液に浸漬した後、水溶性Pd塩と錯化剤とを配
合してなるPd処理液に浸漬し、再びボラン系還元剤を
含有する無電解酸化亜鉛めっき液に浸漬して無電解酸化
亜鉛皮膜を形成することを特徴とする無電解酸化亜鉛皮
膜の形成方法。 請求項2:Pd処理液中の水溶性Pd塩の濃度が8×1
-4〜4.5×10-2mol/Lである請求項1記載の
無電解酸化亜鉛皮膜の形成方法。 請求項3:水溶性Pd塩と錯化剤とのモル濃度比(水溶
性Pd塩:錯化剤)が1:10〜1:5000である請
求項1又は2記載の無電解酸化亜鉛皮膜の形成方法。 請求項4:Pd処理液のpHが2〜4である請求項1〜
3のいずれか1項記載の無電解酸化亜鉛皮膜の形成方
法。 請求項5:錯化剤が塩化物である請求項1〜4のいずれ
か1項記載の無電解酸化亜鉛皮膜の形成方法。 請求項6:上記触媒層が形成された基体が、非導電性基
材表面上に、Sn,Ag,PdをSn:Ag:Pd=
(1〜10):(1〜10):(1〜10)の重量割合
で有する触媒層が形成されてなる高密度Pd核分散層を
有する基体である請求項1〜5のいずれか1項記載の無
電解酸化亜鉛皮膜の形成方法。 請求項7:上記触媒層が、Sn,Ag,Pdからなる触
媒核を1500核/μm 2以上の核密度で有する請求項
1〜6のいずれか1項記載の無電解酸化亜鉛皮膜の形成
方法。 請求項8:上記触媒層の平均粗さが0.5nm以下であ
る請求項1〜7のいずれか1項記載の無電解酸化亜鉛皮
膜の形成方法。 請求項9:上記触媒層の触媒核の粒子サイズが2nm以
下である請求項1〜8のいずれか1項記載の無電解酸化
亜鉛皮膜の形成方法。
That is, the present invention provides the following electroless zinc oxide skin
A method for forming a film is provided. Claim 1: a group in which a catalyst layer is formed on the surface of a non-conductive substrate
Electroless zinc oxide plating solution containing borane-based reducing agent
To form an electroless zinc oxide film by immersion in
Thus, the substrate is made of an electroless oxide containing a borane-based reducing agent.
After immersion in a lead plating solution, a water-soluble Pd salt and a complexing agent are distributed.
Immersed in the combined Pd treatment solution, and again
Electroless oxidation by immersion in the contained electroless zinc oxide plating solution
Electroless zinc oxide skin characterized by forming a zinc film
Method of forming a film. In a preferred embodiment, the concentration of the water-soluble Pd salt in the Pd treatment liquid is 8 × 1.
0-Four~ 4.5 × 10-2mol / L.
A method for forming an electroless zinc oxide film. Claim 3: Molar concentration ratio of water-soluble Pd salt and complexing agent (water-soluble
(Pd salt: complexing agent) is 1:10 to 1: 5000.
3. The method for forming an electroless zinc oxide film according to claim 1 or 2. Claim 4: The Pd treatment solution has a pH of 2 to 4.
3. The method for forming an electroless zinc oxide film according to any one of 3.
Law. In a preferred embodiment, the complexing agent is chloride.
The method for forming an electroless zinc oxide film according to claim 1. In another embodiment, the substrate on which the catalyst layer is formed is a non-conductive group.
On the material surface, Sn, Ag, and Pd are converted to Sn: Ag: Pd =
(1-10): (1-10): weight ratio of (1-10)
A high-density Pd nucleus dispersion layer having a catalyst layer
The substrate according to any one of claims 1 to 5, wherein the substrate has
A method for forming an electrolytic zinc oxide film. In a preferred embodiment, the catalyst layer is made of Sn, Ag, Pd.
1500 nuclei / μm TwoClaims with the above nuclear density
7. Formation of the electroless zinc oxide film according to any one of 1 to 6.
Method. Claim 8: The average roughness of the catalyst layer is 0.5 nm or less.
The electroless zinc oxide skin according to any one of claims 1 to 7.
Method of forming a film. Claim 9: The particle size of the catalyst core of the catalyst layer is 2 nm or less.
The electroless oxidation according to any one of claims 1 to 8, which is below.
How to form a zinc film.

【0011】以下、本発明につき更に詳しく説明する。
本発明の無電解酸化亜鉛皮膜の形成方法は、まず非導電
性基材表面に触媒層を形成する。
Hereinafter, the present invention will be described in more detail.
In the method for forming an electroless zinc oxide film of the present invention, first, a catalyst layer is formed on the surface of a non-conductive substrate.

【0012】この場合、上記基材としては、ガラス、プ
ラスチック、セラミックなどの非導電性基材が挙げら
れ、これらの複合体であってもよく、表面全体又は表面
の所定個所が非導電部とされているものを使用できる。
また、上記基材表面に酸化物等の絶縁物質が被覆されて
いるものも採用できる。また、形状としても、板状、シ
ート状、粉体等が採用でき、制限されず、これら基材を
公知の脱脂剤、有機溶剤等で洗浄後、界面活性剤やシラ
ンカップリング剤等の公知の表面調整剤を用いて基体表
面に電荷を付与した後、触媒付与処理を行う。
In this case, examples of the base material include non-conductive base materials such as glass, plastic, and ceramics, and may be a composite of these base materials. You can use what is.
In addition, a substrate in which an insulating material such as an oxide is coated on the surface of the base material can be employed. In addition, the shape may be plate-like, sheet-like, powdery, or the like, and is not limited. After washing these base materials with a known degreasing agent, an organic solvent, or the like, a known surfactant such as a surfactant or a silane coupling agent may be used. After applying a charge to the surface of the substrate using the surface conditioner, a catalyst applying treatment is performed.

【0013】上記非導電性基材上ヘの触媒の付与方法に
ついては、センシタイジング−アクチベーティング法、
アルカリキャタリスト法、キャタリスト−アクセレレー
ター法等の水溶液による付与方法、有機金属錯体を付与
した後に熱分解を施す方法、スパッタリング法等の乾式
法等を使用することができる。とりわけ、光透過性を得
るには、Sn、Ag,Pdを有する触媒層を形成するこ
とが好ましく、水溶液を用いたセンシタイジング−銀活
性−パラジウム活性による付与方法がその工程や水溶
液、処理の条件を制御することにより容易に適用でき
る。例えば、センシタイジング溶液としては、SnCl
2,SnSO4等の2価の錫塩を塩酸、硫酸等の酸溶液に
溶解した、2価の錫イオンを1〜50g/L含有し、p
H0.1〜1.5程度の強酸性である溶液を使用し、1
0〜60℃で10秒〜5分間浸漬処理し、次いで、銀イ
オンを含有する活性化剤としては銀イオンが0.000
1〜0.5mol/Lであるものを用い、pHは5〜1
1とし、液温を15〜60℃として、10秒〜5分間浸
漬処理すればよい。パラジウムを含有する活性化剤とし
ては、PdCl2,PdSO4等の2価のパラジウム塩を
塩酸、硫酸等の酸溶液に溶解し、2価のPdイオンを
0.01〜1g/L含有し、pHが1〜3である溶液を
使用し、10〜60℃で1秒〜5分間浸漬処理すること
が好ましい。長時間浸漬しすぎると、Pd核が凝集し、
塊粒化が生じるおそれがある。
[0013] The method of applying the catalyst on the non-conductive substrate includes a sensitizing-activating method,
An application method using an aqueous solution such as an alkali catalyst method or a catalyst-accelerator method, a method of applying an organic metal complex and then performing thermal decomposition, and a dry method such as a sputtering method can be used. In particular, in order to obtain light transmittance, it is preferable to form a catalyst layer having Sn, Ag, and Pd, and a method of imparting by sensitizing-silver activity-palladium activity using an aqueous solution involves the steps, aqueous solution, and treatment. It can be easily applied by controlling the conditions. For example, as a sensitizing solution, SnCl
2 , 1 to 50 g / L of divalent tin ions in which a divalent tin salt such as SnSO 4 is dissolved in an acid solution such as hydrochloric acid or sulfuric acid;
Use a strongly acidic solution of about H.
The immersion treatment is carried out at 0 to 60 ° C. for 10 seconds to 5 minutes.
1 to 0.5 mol / L, and the pH is 5 to 1
1, the liquid temperature may be 15 to 60 ° C., and the immersion treatment may be performed for 10 seconds to 5 minutes. As an activator containing palladium, a divalent palladium salt such as PdCl 2 or PdSO 4 is dissolved in an acid solution such as hydrochloric acid or sulfuric acid, and contains 0.01 to 1 g / L of divalent Pd ions; It is preferable to use a solution having a pH of 1 to 3 and perform immersion treatment at 10 to 60 ° C. for 1 second to 5 minutes. If soaked for a long time, Pd nuclei will aggregate,
Agglomeration may occur.

【0014】本発明においては、このように特に非導電
性基材表面上にSn,Ag,Pdを、Sn:Ag:Pd
=(1〜10):(1〜10):(1〜10)の重量割
合で付与することが推奨され、特に水溶液による付与方
法の場合、微細な触媒核を高密度に得るためには、好ま
しくはSn:Ag:Pd=(1〜5):(1〜5):
(1〜5)、更に好ましくはSn:Ag:Pd=(1〜
4):(1〜3):(1〜2)の範囲とし、かつ、Sn
≧Ag≧Pdとすることが好ましい。
In the present invention, Sn, Ag, and Pd are particularly deposited on the surface of the non-conductive substrate, and Sn: Ag: Pd
= (1 to 10): (1 to 10): It is recommended to apply at a weight ratio of (1 to 10). In particular, in the case of an application method using an aqueous solution, in order to obtain fine catalyst nuclei at a high density, Preferably, Sn: Ag: Pd = (1-5) :( 1-5):
(1-5), more preferably Sn: Ag: Pd = (1-5)
4): (1-3): within the range of (1-2), and Sn
It is preferable that ≧ Ag ≧ Pd.

【0015】センシタイジング処理とAg活性化処理に
よりSn:Ag=3:2程度に付与させることにより、
微細な触媒核を高密度に付与させることができる。
By giving Sn: Ag = about 3: 2 by the sensitizing treatment and the Ag activating treatment,
Fine catalyst nuclei can be provided at a high density.

【0016】また、その後に付与させるPdの割合とし
ても、特にはAgよりもPdの割合が少ない方が好まし
く、Ag:Pd=2:1程度とすることがよく、上記範
囲よりPdが多いと粒子径が大きくなる傾向となる。な
お、Pdが少なすぎると無電解めっきの触媒としての機
能が低下する。
Also, as for the ratio of Pd to be subsequently applied, it is particularly preferable that the ratio of Pd is smaller than that of Ag, and it is preferable that Ag: Pd = about 2: 1. The particle size tends to increase. If the amount of Pd is too small, the function as a catalyst for electroless plating deteriorates.

【0017】Sn:Ag:Pd=3:2:1付近が微細
な触媒核を高密度に得るための最適条件である。
Around Sn: Ag: Pd = 3: 2: 1 is the optimum condition for obtaining fine catalyst nuclei at high density.

【0018】ここで、上記のような最適条件とするに
は、特にセンシタイジング−銀活性−パラジウム活性を
1つの工程として、複数回繰り返すことが好ましく、こ
れによって微細な触媒核を高密度に付与することができ
る。この理由については定かではないが、まずセンシタ
イジング−銀活性−パラジウム活性を1回行うことによ
り、非常に微細な触媒核が形成され、上記工程を繰り返
すことによって、最初に付与された触媒核を中心に高密
度に触媒核が形成されるためであると考えられる。
Here, in order to achieve the above-mentioned optimum conditions, it is particularly preferable to repeat sensitizing-silver activity-palladium activity as one step a plurality of times. Can be granted. Although the reason for this is not clear, a very fine catalyst nucleus is formed by performing the sensitizing-silver activity-palladium activity once, and the catalyst nucleus initially provided is obtained by repeating the above steps. This is presumably because catalyst nuclei are formed at a high density around the center.

【0019】Sn,Ag,Pdを上記範囲とすることに
より、触媒核粒子を1500核/μm2以上、好ましく
は2000核/μm2以上、更に好ましくは2500核
/μm 2以上、特には3000核/μm2以上の核密度と
することができる。この場合、高密度Pd核分散層は、
平均表面粗さが0.5nm以下、特に0.3nm以下と
することができ、また、触媒核粒子径は2nm以下、好
ましくは1.5nm以下、更に好ましくは1nm以下と
することができ、高密度で緻密な層を形成し得る。な
お、この高密度Pd核分散層を無電解めっきの触媒層と
して利用する場合には、触媒核の粒子径としては、0.
03nm以上とすることが好ましい。上記核密度、平均
粗さ、平均粒子径は、AFM(原子間力顕微鏡)観察に
より測定し得る。
When Sn, Ag, and Pd are within the above ranges,
From the catalyst core particles of 1500 nuclei / μmTwoAbove, preferably
Is 2000 nuclei / μmTwoAbove, more preferably 2500 nuclei
/ Μm TwoAbove, especially 3000 nuclei / μmTwoWith the above nuclear density
can do. In this case, the high-density Pd nucleus dispersion layer
The average surface roughness is 0.5 nm or less, especially 0.3 nm or less
The catalyst core particle diameter is 2 nm or less,
Preferably 1.5 nm or less, more preferably 1 nm or less.
And a dense and dense layer can be formed. What
This high-density Pd nucleus dispersion layer is used as a catalyst layer for electroless plating.
In the case where the catalyst nucleus is used, the particle diameter of the catalyst nucleus is set to 0.1.
It is preferably at least 03 nm. Nuclear density above, average
Roughness and average particle size are determined by AFM (atomic force microscope) observation.
More measurable.

【0020】なお、Sn,Ag,Pdの重量割合は、I
CP(誘導結合プラズマ発光分光分析装置)にて分析で
きる。
The weight ratio of Sn, Ag, and Pd is I
It can be analyzed by CP (Inductively Coupled Plasma Emission Spectroscopy).

【0021】本発明においては、このように非導電性基
材表面上に触媒層が形成された基体をボラン系還元剤を
含有する無電解酸化亜鉛めっき液に浸漬して無電解酸化
亜鉛皮膜を形成するものであるが、この場合、上記基体
をボラン系還元剤を含有する無電解酸化亜鉛めっき液に
浸漬した後、水溶性Pd塩と錯化剤とを配合してなるP
d処理液に浸漬し、再びボラン系還元剤を含有する無電
解酸化亜鉛めっき液に浸漬して無電解酸化亜鉛皮膜を形
成するものである。
In the present invention, the substrate having the catalyst layer formed on the surface of the non-conductive substrate is immersed in an electroless zinc oxide plating solution containing a borane-based reducing agent to form an electroless zinc oxide film. In this case, the substrate is immersed in an electroless zinc oxide plating solution containing a borane-based reducing agent, and then mixed with a water-soluble Pd salt and a complexing agent.
d. The film is dipped in the treatment liquid and dipped again in the electroless zinc oxide plating solution containing a borane-based reducing agent to form an electroless zinc oxide film.

【0022】ここで、無電解酸化亜鉛皮膜析出溶液とし
ては、酸化亜鉛を析出させる液であればよく、特に制限
されないが、硝酸亜鉛等の亜鉛塩を0.01〜0.5m
ol/L、好ましくは0.05〜0.2mol/Lと、
ジメチルアミンボラン等のアミンボラン系還元剤、その
他の還元剤を0.001〜0.5mol/L、好ましく
は0.0005〜0.3mol/L、特に0.0001
〜0.2mol/L含有するpH4〜9程度、特にpH
6.5程度の処理液を好適に用いることができ、10〜
80℃で10〜200分間、特に50〜80℃で、30
〜60分間浸漬処理する方法が採用し得る。
Here, the electroless zinc oxide film deposition solution is not particularly limited as long as it is a solution for precipitating zinc oxide.
ol / L, preferably 0.05 to 0.2 mol / L,
An amine borane-based reducing agent such as dimethylamine borane or another reducing agent is used in an amount of 0.001 to 0.5 mol / L, preferably 0.0005 to 0.3 mol / L, particularly 0.0001.
PH of about 4 to 9 containing 0.2 mol / L, especially pH
A processing solution of about 6.5 can be suitably used.
At 80 ° C for 10 to 200 minutes, especially at 50 to 80 ° C for 30 minutes
A method of immersion treatment for up to 60 minutes can be adopted.

【0023】ここで、上記触媒層上に形成する無電解酸
化亜鉛皮膜は、ボラン系還元剤、特にジメチルアミンボ
ラン(DMAB)の濃度を変えることによって無電解酸
化亜鉛皮膜の結晶の配向性[(100)面:(002)
面:(101)面]を制御することが可能である。
Here, the electroless zinc oxide film formed on the catalyst layer can be formed by changing the concentration of a borane-based reducing agent, particularly dimethylamine borane (DMAB), to change the crystal orientation of the electroless zinc oxide film [( 100) plane: (002)
Plane: (101) plane] can be controlled.

【0024】即ち、例えば、硝酸亜鉛0.1mol/
L、めっき浴pH6.3、めっき浴温度68℃の条件下
では、DMAB濃度を0.001〜0.01mol/L
に調整すると(101)面に優先配向した酸化亜鉛皮膜
が得られ、0.02〜0.08mol/Lに調整すると
(002)面に配向した酸化亜鉛皮膜が得られ、0.1
〜0.2mol/Lに調整すると(100)面に配向し
た酸化亜鉛皮膜を得ることができる。特に、(002)
面に優先配向した酸化亜鉛皮膜では、(002)面のピ
ーク強度比が、(101)面のピーク強度比に対して
1.5倍以上、特に2倍以上、更には5倍以上を示す優
先配向酸化亜鉛皮膜が得られる。
That is, for example, zinc nitrate 0.1 mol /
L, plating bath pH 6.3, plating bath temperature 68 ° C., DMAB concentration 0.001 to 0.01 mol / L
When adjusted to (101) plane, a zinc oxide film preferentially oriented was obtained, and when adjusted to 0.02 to 0.08 mol / L, a zinc oxide film oriented to (002) plane was obtained.
When adjusted to 0.2 mol / L, a zinc oxide film oriented on the (100) plane can be obtained. In particular, (002)
In the zinc oxide film preferentially oriented on the plane, the peak intensity ratio of the (002) plane is 1.5 times or more, especially 2 times or more, and more preferably 5 times or more of the peak intensity ratio of the (101) plane. An oriented zinc oxide film is obtained.

【0025】ここで、<優先配向>とは、X線回折の結
果、酸化亜鉛の(100)面と(002)面と(10
1)面を比較して最もピーク強度の大きいものと定義す
る。
Here, the <preferred orientation> means (100) plane, (002) plane and (10) plane of zinc oxide as a result of X-ray diffraction.
1) The surfaces are compared and defined as having the largest peak intensity.

【0026】この配向性は、無電解酸化亜鉛皮膜の光透
過性、光触媒性、導電性といった各特性へ関係がある
が、上記無電解酸化亜鉛めっき液条件では、光透過性を
90%以上とする場合には、DMAB濃度は0.001
〜0.1mol/L、特に0.005〜0.05mol
/L(ピークは0.03mol/L)、高い光触媒性を
得るには、DMAB濃度を0.001〜0.5mol/
L、特に0.01〜0.3mol/L(ピークは0.1
mol/L)、導電性膜としての特性を得るには、DM
AB濃度を0.001〜0.05mol/L、特に0.
005〜0.03mol/L(ピークは0.01mol
/L)とすることで、これら無電解酸化亜鉛皮膜の特性
を得ることができる。また、この範囲を考慮することに
より、上記各特性を2種以上持つ無電解酸化亜鉛皮膜を
容易に得ることが可能であり、例えば、透明導電性膜の
ような光透過性と導電性膜としての特性を両方活かす場
合には、DMAB濃度を0.005〜0.05mol/
L(例えば、0.01mol/L)とすることにより、
光透過性が90%以上の透明導電性膜を得ることができ
る。このように、DMAB濃度を設定することで、所望
する無電解酸化亜鉛皮膜の特性を得ることが可能であ
る。
The orientation has a relation to each property of the electroless zinc oxide film, such as light transmittance, photocatalytic property, and conductivity. Under the above conditions of the electroless zinc oxide plating solution, the light transmittance is 90% or more. If so, the DMAB concentration is 0.001
0.1 mol / L, especially 0.005 to 0.05 mol
/ L (the peak is 0.03 mol / L), and in order to obtain high photocatalytic property, the DMAB concentration is set to 0.001 to 0.5 mol / L.
L, especially 0.01 to 0.3 mol / L (peak is 0.1
mol / L), to obtain the properties as a conductive film, use DM
The AB concentration is 0.001 to 0.05 mol / L, especially 0.1 to 0.05 mol / L.
005 to 0.03 mol / L (peak is 0.01 mol
/ L), the characteristics of these electroless zinc oxide films can be obtained. In addition, by considering this range, it is possible to easily obtain an electroless zinc oxide film having two or more of the above properties, for example, as a light-transmitting and conductive film such as a transparent conductive film. When the characteristics of both are utilized, the DMAB concentration is set to 0.005 to 0.05 mol /
L (eg, 0.01 mol / L),
A transparent conductive film having a light transmittance of 90% or more can be obtained. Thus, by setting the DMAB concentration, it is possible to obtain desired characteristics of the electroless zinc oxide film.

【0027】本発明の無電解酸化亜鉛皮膜の形成方法
は、上記酸化亜鉛皮膜が形成された基体を、水溶性Pd
塩と錯化剤とを配合してなるPd処理液に浸漬し、Pd
を吸着させ、更に無電解酸化亜鉛めっきを行うことを1
回又はそれ以上繰り返すものである。
In the method for forming an electroless zinc oxide film of the present invention, the substrate on which the zinc oxide film is formed is treated with a water-soluble Pd
Immersed in a Pd treatment solution containing a salt and a complexing agent,
Adsorption and then electroless zinc oxide plating
It is repeated one or more times.

【0028】ここで、本発明のPd処理液は、水溶性P
d塩と錯化剤とを塩酸、硫酸等の酸溶液に溶解すること
により得ることができる。
Here, the Pd treatment liquid of the present invention is a water-soluble Pd
It can be obtained by dissolving the d salt and the complexing agent in an acid solution such as hydrochloric acid and sulfuric acid.

【0029】なお、水溶性Pd塩としては、例えば、P
dCl2,PdSO4等を挙げることができ、錯化剤とし
ては、塩化カリウム、塩化ナトリウム等の水溶性アルカ
リ金属塩、塩化マグネシウム等のアルカリ土類金属塩、
アンモニア水、塩化アンモニウム等のアンモニウム化合
物、クエン酸、リンゴ酸等のカルボン酸やその水溶性塩
などが挙げられ、中でも塩化物が好ましい。
The water-soluble Pd salt includes, for example, P
dCl 2, mention may be made of PdSO 4, etc., as the complexing agent, potassium chloride, water-soluble alkali metal salts such as sodium chloride, alkaline earth metal salts such as magnesium chloride,
Examples include aqueous ammonia, ammonium compounds such as ammonium chloride, carboxylic acids such as citric acid and malic acid, and water-soluble salts thereof, among which chlorides are preferred.

【0030】本発明において、上記水溶性Pd塩と錯化
剤とのモル濃度比(水溶性Pd塩:錯化剤)は、通常
1:10〜1:5000、特に1:30〜600である
ことが推奨される。水溶性Pd塩に対する錯化剤のモル
濃度比が10より少ないと、次工程で作成される酸化亜
鉛皮膜の表面粗さが粗くなり、また、Pdの吸着量が増
えるため、光透過性が落ち、黒色化する。一方、500
0より多いと、Pdの吸着量が減少し、酸化亜鉛を更に
析出させることが困難な場合がある。
In the present invention, the molar concentration ratio of the water-soluble Pd salt to the complexing agent (water-soluble Pd salt: complexing agent) is usually from 1:10 to 1: 5000, especially from 1:30 to 600. It is recommended that If the molar concentration ratio of the complexing agent to the water-soluble Pd salt is less than 10, the surface roughness of the zinc oxide film formed in the next step becomes rough, and the amount of Pd adsorbed increases, so that the light transmittance decreases. , And turns black. On the other hand, 500
If it is more than 0, the amount of adsorption of Pd decreases, and it may be difficult to further deposit zinc oxide.

【0031】本発明のPd処理液は、上記水溶性Pd塩
が8×10-4〜4.5×10-2mol/L、特に8×1
-4〜1×10-2mol/Lになるように配合すること
が推奨される。添加量が少ないと、Pd吸着量が少なく
なり、酸化亜鉛皮膜の析出が困難になり、多すぎるとP
dの吸着量が増え、光透過性が悪くなる。
In the Pd-treated solution of the present invention, the water-soluble Pd salt contains 8 × 10 −4 to 4.5 × 10 −2 mol / L, particularly 8 × 1 −4 mol / L.
It is recommended that the compounding be performed so as to be 0 -4 to 1 × 10 -2 mol / L. If the amount is small, the amount of Pd adsorbed is small, and the deposition of the zinc oxide film is difficult.
The adsorption amount of d increases, and the light transmittance deteriorates.

【0032】本発明のPd処理液は、pHが2〜4、特
に2.5〜4に調整することが推奨される。pHが低す
ぎると、強酸により無電解酸化亜鉛皮膜が過度に溶解す
る場合がある。酸化亜鉛皮膜上では理由は定かでない
が、水溶性Pd塩濃度が高すぎると、Pd核が粒塊化し
てしまう傾向があるが、単にPd塩濃度を低くするだけ
では、このPd核の粒塊化は防止できず、錯化剤を上記
濃度範囲とすることで微細なPd核を吸着させることが
できる。しかし、塩酸などの酸のみでPdを錯化する
と、pHが低くなりすぎ、酸化亜鉛皮膜を侵食し、表面
を粗くしてしまうおそれがある。従って、pHを上記範
囲とすることが更に必要となる。微細なPd核を分散さ
せ、表面が緻密であれば、次いで析出される無電解酸化
亜鉛皮膜も表面粗さが低い優れた光透過性を持つことが
できる。
It is recommended that the pH of the Pd treatment liquid of the present invention be adjusted to 2 to 4, especially 2.5 to 4. If the pH is too low, the electroless zinc oxide film may be excessively dissolved by the strong acid. Although the reason is not clear on the zinc oxide film, if the concentration of the water-soluble Pd salt is too high, the Pd nucleus tends to agglomerate. However, fine Pd nuclei can be adsorbed by setting the concentration of the complexing agent within the above range. However, if Pd is complexed only with an acid such as hydrochloric acid, the pH may be too low, eroding the zinc oxide film and roughening the surface. Therefore, it is further necessary to keep the pH within the above range. If fine Pd nuclei are dispersed and the surface is dense, the electroless zinc oxide film to be subsequently deposited can also have excellent light transmittance with low surface roughness.

【0033】本発明において、このPd処理液への浸漬
工程は、上記酸化亜鉛皮膜が形成された基体を、上記水
溶性Pd塩と錯化剤とを含有するPd処理液に浸漬する
ものであるが、通常、処理時間15秒〜5分、特に15
秒〜1分の条件、処理温度室温〜80℃、特に25〜6
0℃の条件にて行うことができる。
In the present invention, in the immersion step in the Pd treatment liquid, the substrate on which the zinc oxide film is formed is immersed in the Pd treatment liquid containing the water-soluble Pd salt and the complexing agent. However, the processing time is usually 15 seconds to 5 minutes, especially 15 minutes.
Seconds to 1 minute, processing temperature room temperature to 80 ° C, especially 25 to 6
It can be performed under the condition of 0 ° C.

【0034】本発明の酸化亜鉛皮膜の形成方法は、上記
Pd処理液浸漬処理とその後の無電解酸化亜鉛めっき処
理を1回以上、通常1〜10回行うことができ、特に透
明導電性膜として使用する場合には、2〜5回繰り返す
ことができる。
In the method for forming a zinc oxide film of the present invention, the above-mentioned Pd treatment solution immersion treatment and the subsequent electroless zinc oxide plating treatment can be performed one or more times, usually 1 to 10 times. If used, it can be repeated 2-5 times.

【0035】また、無電解酸化亜鉛めっきは、めっき開
始当初に最大析出速度となり、徐々に、析出速度が遅く
なっていくため、同じめっき処理時間でも、回数を増や
すことでより短時間で所望膜厚を得ることができる。
In the electroless zinc oxide plating, the maximum deposition rate is at the beginning of the plating, and the deposition rate is gradually decreased. Thickness can be obtained.

【0036】なお、Pd処理液浸漬工程後の無電解酸化
亜鉛めっきは上記と同様の方法、条件にて行うことがで
きる。
The electroless zinc oxide plating after the Pd treatment liquid immersion step can be performed under the same method and conditions as described above.

【0037】この場合、光透過性を得ようとするには、
各無電解酸化亜鉛めっき工程におけるそれぞれの酸化亜
鉛皮膜の膜厚は0.005μm以上、好ましくは0.0
05〜0.5μmとすることができ、また酸化亜鉛皮膜
の合計厚さは0.2〜2μm、特に0.4〜1μmとす
ることができるが、これに制限されるものではない。光
透過性を犠牲としてシート抵抗値が低い皮膜を得るに
は、更に厚くすることもできる。
In this case, in order to obtain light transmittance,
The thickness of each zinc oxide film in each electroless zinc oxide plating step is 0.005 μm or more, preferably 0.05 μm or more.
However, the total thickness of the zinc oxide film can be 0.2 to 2 μm, particularly 0.4 to 1 μm, but is not limited thereto. In order to obtain a film having a low sheet resistance value at the expense of light transmittance, the thickness can be further increased.

【0038】更には、この無電解酸化亜鉛皮膜を陰極と
して、上記組成液から無電解酸化亜鉛皮膜の上に電解酸
化亜鉛皮膜を作製してもよい。
Further, an electrolytic zinc oxide film may be formed on the electroless zinc oxide film from the above-mentioned composition using the electroless zinc oxide film as a cathode.

【0039】この場合、電解酸化亜鉛皮膜析出溶液とし
ては、酸化亜鉛を析出させる液であればよく、特に制限
されないが、硝酸亜鉛等の亜鉛塩0.01〜0.5mo
l/L、好ましくは0.05〜0.2mol/Lを含有
するpH4〜9程度、特にpH6の処理液を好適に用い
ることができ、陽極として亜鉛、カーボン、白金等を用
いて導電性基板1cm2あたり0.1〜20クーロン、
好ましくは1〜10クーロン通電して酸化亜鉛皮膜を得
ることができる。浴温は10〜80℃の範囲で用いられ
る。
In this case, the electrolytic zinc oxide film deposition solution is not particularly limited as long as it is a liquid for precipitating zinc oxide, and a zinc salt such as zinc nitrate 0.01 to 0.5 mol is used.
1 / L, preferably a treatment solution having a pH of about 4 to 9, particularly pH 6 containing 0.05 to 0.2 mol / L, and a conductive substrate using zinc, carbon, platinum or the like as an anode. 0.1-20 coulombs per cm 2 ,
Preferably, a current of 1 to 10 coulombs is applied to obtain a zinc oxide film. The bath temperature is used in the range of 10 to 80C.

【0040】本発明においては、上記酸化亜鉛皮膜は、
必要により改質剤によって改質することができ、また、
加熱処理を施すことができる。
In the present invention, the zinc oxide film is
If necessary, it can be modified by a modifier,
Heat treatment can be performed.

【0041】この場合、酸化亜鉛皮膜を改質する改質剤
は、3価の金属カチオンを含む水溶液であることが好ま
しく、ここで、3価の金属カチオンとしては、In3+
Al 3+,Ga3+,Tb3+,Y3+,Eu3+,Bi3+,Ru
3+,Ce3+等を挙げることができ、これらの1種又は2
種以上を含有するものである。なお、対アニオンとして
は、その3価の金属化合物を水溶液とするものであれば
よく、特に制限されないが、硫酸イオン、ハロゲンイオ
ン、リン酸イオン、硝酸イオン、酢酸イオン、クエン酸
イオン、乳酸イオン、その他のカルボン酸イオンなどが
挙げられる。上記3価の金属カチオンは、水溶液中に
0.1〜50g/L、より好ましくは0.3〜3g/L
含有されることが有効である。上記3価の金属カチオン
が上記範囲を外れると、酸化亜鉛上に均一に改質皮膜が
得られなくなるおそれがある。
In this case, a modifying agent for modifying the zinc oxide film
Is preferably an aqueous solution containing a trivalent metal cation.
Here, the trivalent metal cation is In3+,
Al 3+, Ga3+, Tb3+, Y3+, Eu3+, Bi3+, Ru
3+, Ce3+And one of these or 2
Contains more than one species. In addition, as a counter anion
Can be used as an aqueous solution of the trivalent metal compound.
Well, although not particularly limited, sulfate ion, halogen ion
, Phosphate ion, nitrate ion, acetate ion, citric acid
Ions, lactate ions and other carboxylate ions
No. The trivalent metal cation is contained in an aqueous solution.
0.1 to 50 g / L, more preferably 0.3 to 3 g / L
It is effective to be contained. The above trivalent metal cation
Is out of the above range, a modified film is uniformly formed on the zinc oxide.
There is a possibility that it cannot be obtained.

【0042】上記3価の金属カチオン含有水溶液(改質
剤)のpHは2〜10、特に3〜8であることが好まし
い。
The pH of the trivalent metal cation-containing aqueous solution (modifier) is preferably 2 to 10, more preferably 3 to 8.

【0043】上記処理により得られる、酸化亜鉛皮膜中
の3価金属の含有量は、比抵抗値を安定させるためには
0.01重量%以上とすることが好ましく、更に優れた
透明性を得るためには30重量%以下とすることが好ま
しい。より好ましくは0.05〜10重量%、更に好ま
しくは0.1〜5重量%である。
The content of the trivalent metal in the zinc oxide film obtained by the above treatment is preferably 0.01% by weight or more in order to stabilize the specific resistance value, and further excellent transparency is obtained. For this purpose, the content is preferably 30% by weight or less. More preferably, it is 0.05 to 10% by weight, further preferably 0.1 to 5% by weight.

【0044】酸化亜鉛皮膜を改質剤で処理する場合の条
件は、適宜選定されるが、10〜60℃、特に20〜4
0℃で1秒〜10分程度の条件を採用することができ、
酸化亜鉛を改質剤中に浸漬することによって処理するこ
とができるが、スプレー処理等によってもよい。
The conditions for treating the zinc oxide film with the modifying agent are appropriately selected, but are preferably 10 to 60 ° C., particularly 20 to 4 ° C.
A condition of about 1 second to 10 minutes at 0 ° C. can be adopted,
The treatment can be carried out by immersing zinc oxide in a modifier, but may be carried out by a spray treatment or the like.

【0045】上記処理によれば、酸化亜鉛皮膜表面が水
溶液で濡れているので、空気との接触を抑制することが
できるため、処理中に酸化亜鉛皮膜の比抵抗率が変動す
ることを抑えることができる。
According to the above treatment, since the surface of the zinc oxide film is wet with the aqueous solution, the contact with the air can be suppressed. Therefore, it is possible to suppress the fluctuation of the resistivity of the zinc oxide film during the treatment. Can be.

【0046】また、上記工程により得られた改質酸化亜
鉛皮膜を加熱処理する条件については、150〜700
℃、好ましくは200〜650℃で行うことが推奨さ
れ、また加熱時間は5分〜2時間であることが好まし
く、これにより、導電性が更に向上する。
The conditions for heat-treating the modified zinc oxide film obtained in the above step are as follows.
C., preferably at 200 to 650 ° C., and the heating time is preferably 5 minutes to 2 hours, whereby the conductivity is further improved.

【0047】ここで、上記加熱処理は、上記改質処理に
次いで行うこともできるが、後述する酸化亜鉛皮膜以外
の層を酸化亜鉛皮膜の上層へ形成した後に行ってもよ
い。
Here, the above-mentioned heat treatment can be carried out after the above-mentioned modification treatment, but may be carried out after a layer other than the zinc oxide film described later is formed on the zinc oxide film.

【0048】更に、加熱雰囲気は、大気中、窒素、ヘリ
ウム、アルゴン等の非酸化性ガス雰囲気、水素等の還元
性ガス雰囲気、これらの混合ガス雰囲気のいずれであっ
てもよいが、ガス雰囲気中の酸素濃度を100ppm以
下、特に10ppm以下とすることが好ましい。ガス雰
囲気中の酸素濃度が100ppmよりも多いと、加熱し
ても導電性が十分に向上しない場合がある。これは、ガ
ス雰囲気中の酸素が多いために酸化亜鉛皮膜中の酸素欠
陥を形成することが困難であるためと考えられる。ま
た、水素等の還元ガスを非酸化性ガス雰囲気中に0.0
1〜10容量%、特に0.05〜5容量%含有する混合
ガスを使用することにより、より抵抗値の低い酸化亜鉛
皮膜を得ることができる。これは、還元性ガスにより酸
化亜鉛皮膜中に酸素欠陥を形成し、抵抗値の低い酸化亜
鉛皮膜が得られると考えられる。また、酸化亜鉛の一部
が還元ガスにより金属に還元されるのかも知れない。
Further, the heating atmosphere may be any of the atmosphere, a non-oxidizing gas atmosphere such as nitrogen, helium, and argon, a reducing gas atmosphere such as hydrogen, and a mixed gas atmosphere thereof. Is preferably 100 ppm or less, particularly preferably 10 ppm or less. If the oxygen concentration in the gas atmosphere is higher than 100 ppm, the conductivity may not be sufficiently improved even when heated. This is considered to be because it is difficult to form oxygen defects in the zinc oxide film due to a large amount of oxygen in the gas atmosphere. Further, a reducing gas such as hydrogen is introduced into a non-oxidizing gas atmosphere at 0.0
By using a mixed gas containing 1 to 10% by volume, particularly 0.05 to 5% by volume, a zinc oxide film having a lower resistance value can be obtained. This is presumably because oxygen gas defects are formed in the zinc oxide film by the reducing gas, and a zinc oxide film having a low resistance value is obtained. Also, part of zinc oxide may be reduced to metal by the reducing gas.

【0049】本発明の工程により作製された改質酸化亜
鉛皮膜は、500Ω/□以下、特に350Ω/□以下の
シート抵抗値であり、導電性がよいため、電極として使
用することができる。また、この改質酸化亜鉛皮膜を陰
極として、該酸化亜鉛皮膜上に多様な層を形成すること
ができ、例えば、金属層や電着塗装層を形成することが
できる。この場合、該酸化亜鉛皮膜はエッチングが容易
である(強酸液や強アルカリ液を使用せずに容易にエッ
チングできる)ことから、エッチングが困難な金属等を
容易にパターニングすることができる上、該酸化亜鉛皮
膜を作製する溶液のpHも中性付近であることから、基
体の侵食をせずに処理することができる。また、電着塗
装を行う場合、不導電体上への電着塗装が可能となり、
更に透明性を持った酸化亜鉛皮膜を作製した場合には、
陰極となる金属層の色むらによって発生する、電着塗装
膜の膜厚が薄い場合の電着塗装膜の色調変化を抑えるこ
とができる上、必要によって、パターン化した電着塗装
を得ることができる。
The modified zinc oxide film produced by the process of the present invention has a sheet resistance of 500 Ω / □ or less, particularly 350 Ω / □ or less, and has good conductivity, and can be used as an electrode. Further, using the modified zinc oxide film as a cathode, various layers can be formed on the zinc oxide film, for example, a metal layer or an electrodeposition coating layer can be formed. In this case, the zinc oxide film is easily etched (it can be easily etched without using a strong acid solution or a strong alkali solution), so that a metal or the like which is difficult to etch can be easily patterned. Since the pH of the solution for forming the zinc oxide film is also near neutrality, the treatment can be performed without eroding the substrate. In addition, when performing electrodeposition coating, electrodeposition coating on a non-conductive material becomes possible,
When a zinc oxide film with transparency is made,
It is possible to suppress the color tone change of the electrodeposition coating film when the film thickness of the electrodeposition coating film is small, which is caused by the uneven color of the metal layer serving as the cathode, and it is also possible to obtain a patterned electrodeposition coating if necessary. it can.

【0050】また、光触媒膜としても使用することがで
きる。
Also, it can be used as a photocatalyst film.

【0051】[0051]

【発明の効果】本発明の無電解酸化亜鉛皮膜の形成方法
によれば、光透過性が高く、シート抵抗値が低く、酸化
亜鉛皮膜を厚く形成することが可能で、特に液晶ディス
プレイ等の透明電極等に適したものである。
According to the method for forming an electroless zinc oxide film of the present invention, the light transmittance is high, the sheet resistance is low, and a thick zinc oxide film can be formed. It is suitable for electrodes and the like.

【0052】[0052]

【実施例】以下、実施例及び比較例を示し、本発明を具
体的に説明するが、本発明は下記の実施例に制限される
ものではない。
EXAMPLES The present invention will be described below in detail with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples.

【0053】〔実施例1〜18、比較例〕非導電性基板
としてソーダライムガラスを用い、下記の工程で触媒を
付与した基体に皮膜形成を行った。
Examples 1 to 18, Comparative Example Using soda lime glass as a non-conductive substrate, a film was formed on a substrate provided with a catalyst in the following steps.

【0054】(1)触媒付与 i.脱脂・表面調整 下記表面調整剤溶液に50℃で5分間浸漬処理した。 アサヒクリーナーC−4000<上村工業(株)製>
5g/L ii.水洗 25℃,15秒間 iii.センシタイジング 下記のセンシタイジング溶液に20℃で1分間浸漬し
た。 塩化錫 15g/L 塩酸 45mL/L pH 0.5 iv.水洗 25℃,15秒間 v.触媒付与 下記の銀活性化溶液に20℃で1分間浸漬した。 硝酸銀 3g/L pH 7.0 vi.水洗 25℃,15秒間 vii.触媒付与 下記のパラジウム活性化溶液に20℃で1分間浸漬し
た。 塩化パラジウム 1.5g/L 塩酸 1.5mL/L pH 2.8 viii.水洗 25℃,15秒間 ・iii〜viiiの操作を3回繰り返した。以上より
得られた高密度Pd核分散層は下記表1の通りであっ
た。
(1) Addition of catalyst i. Degreasing / Surface Adjustment A immersion treatment was performed at 50 ° C. for 5 minutes in the following surface conditioner solution. Asahi Cleaner C-4000 <made by Uemura Kogyo Co., Ltd.>
5 g / L ii. Washing at 25 ° C for 15 seconds iii. Sensitizing It was immersed in the following sensitizing solution at 20 ° C. for 1 minute. Tin chloride 15 g / L hydrochloric acid 45 mL / L pH 0.5 iv. Rinse at 25 ° C for 15 seconds v. Catalyst application Immersion in the following silver activation solution at 20 ° C. for 1 minute. Silver nitrate 3 g / L pH 7.0 vi. Water wash 25 ° C, 15 seconds vii. Catalyst application Immersion in the following palladium activation solution at 20 ° C. for 1 minute. Palladium chloride 1.5 g / L Hydrochloric acid 1.5 mL / L pH 2.8 viii. Washing with water 25 ° C., 15 seconds The operations iii to viii were repeated three times. The high-density Pd nucleus dispersion layer obtained above was as shown in Table 1 below.

【0055】[0055]

【表1】 [Table 1]

【0056】(2)無電解ZnOめっき 上記触媒を付与した基体に対し、下記無電解ZnOめっ
き液を用いてpH6.3,68℃で表3に記載する浸漬
時間で浸漬処理した。 硝酸亜鉛 0.1mol/L DMAB 0.03mol/L pH 6.3
(2) Electroless ZnO Plating The substrate provided with the above catalyst was immersed in the following electroless ZnO plating solution at pH 6.3 and 68 ° C. for an immersion time shown in Table 3. Zinc nitrate 0.1 mol / L DMAB 0.03 mol / L pH 6.3

【0057】(3)Pd吸着 表2に示すA−10X濃度の処理液中に、表3に示す量
でKClを添加した溶液を用い、表3に記載する浸漬時
間において浸漬した。
(3) Pd adsorption A solution obtained by adding KCl in an amount shown in Table 3 to a treatment solution having an A-10X concentration shown in Table 2 was immersed in the immersion time shown in Table 3.

【0058】(4)無電解ZnOめっき (2)と同様の操作 ・(3)と(4)の操作を表3に示す回数繰り返した。 (4) Operation similar to electroless ZnO plating (2) The operations (3) and (4) were repeated the number of times shown in Table 3.

【0059】(5)In置換 以下の処理液中で15秒間浸漬処理を行った。 硫酸インジウム 1 g/L pH 4 (5) The immersion treatment was performed for 15 seconds in a treatment solution of In substitution or less. Indium sulfate 1 g / L pH 4

【0060】(6)加熱 水素3%、窒素97%の混合ガス雰囲気下、500℃の
条件にて10分間乾燥させた。
(6) Drying was performed for 10 minutes at 500 ° C. in a mixed gas atmosphere of heated hydrogen 3% and nitrogen 97%.

【0061】(7)無電解酸化亜鉛皮膜 シート抵抗値、透過率、膜厚について調べた。結果を表
3に併記する。
(7) Electroless zinc oxide film sheet resistance, transmittance, and film thickness were examined. The results are also shown in Table 3.

【0062】[0062]

【表2】 [Table 2]

【0063】[0063]

【表3】 [Table 3]

【0064】〔実施例19,20〕錯化剤をNaCl
(実施例19)とMgCl2(実施例20)とした以外
は、実施例5と同様に酸化亜鉛皮膜を作製した。得られ
た皮膜の物性評価値は実施例5とほぼ同じであった。
Examples 19 and 20 The complexing agent was changed to NaCl
A zinc oxide film was produced in the same manner as in Example 5 except that (Example 19) and MgCl 2 (Example 20) were used. The physical property evaluation values of the obtained film were almost the same as those in Example 5.

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Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 非導電性基材表面上に触媒層が形成され
た基体をボラン系還元剤を含有する無電解酸化亜鉛めっ
き液に浸漬して無電解酸化亜鉛皮膜を形成する方法にお
いて、上記基体をボラン系還元剤を含有する無電解酸化
亜鉛めっき液に浸漬した後、水溶性Pd塩と錯化剤とを
配合してなるPd処理液に浸漬し、再びボラン系還元剤
を含有する無電解酸化亜鉛めっき液に浸漬して無電解酸
化亜鉛皮膜を形成することを特徴とする無電解酸化亜鉛
皮膜の形成方法。
1. A method for forming an electroless zinc oxide film by immersing a substrate having a catalyst layer formed on a surface of a nonconductive substrate in an electroless zinc oxide plating solution containing a borane-based reducing agent. After the substrate is immersed in an electroless zinc oxide plating solution containing a borane-based reducing agent, the substrate is immersed in a Pd treatment solution containing a water-soluble Pd salt and a complexing agent. A method for forming an electroless zinc oxide film, comprising immersing the film in an electrolytic zinc oxide plating solution to form an electroless zinc oxide film.
【請求項2】 Pd処理液中の水溶性Pd塩の濃度が8
×10-4〜4.5×10-2mol/Lである請求項1記
載の無電解酸化亜鉛皮膜の形成方法。
2. The water-soluble Pd salt concentration in the Pd treatment liquid is 8%.
The method for forming an electroless zinc oxide film according to claim 1, wherein the amount is from × 10 −4 to 4.5 × 10 −2 mol / L.
【請求項3】 水溶性Pd塩と錯化剤とのモル濃度比
(水溶性Pd塩:錯化剤)が1:10〜1:5000で
ある請求項1又は2記載の無電解酸化亜鉛皮膜の形成方
法。
3. The electroless zinc oxide film according to claim 1, wherein the molar concentration ratio of the water-soluble Pd salt to the complexing agent (water-soluble Pd salt: complexing agent) is 1:10 to 1: 5000. Formation method.
【請求項4】 Pd処理液のpHが2〜4である請求項
1〜3のいずれか1項記載の無電解酸化亜鉛皮膜の形成
方法。
4. The method for forming an electroless zinc oxide film according to claim 1, wherein the pH of the Pd treatment liquid is 2 to 4.
【請求項5】 錯化剤が塩化物である請求項1〜4のい
ずれか1項記載の無電解酸化亜鉛皮膜の形成方法。
5. The method for forming an electroless zinc oxide film according to claim 1, wherein the complexing agent is a chloride.
【請求項6】 上記触媒層が形成された基体が、非導電
性基材表面上に、Sn,Ag,PdをSn:Ag:Pd
=(1〜10):(1〜10):(1〜10)の重量割
合で有する触媒層が形成されてなる高密度Pd核分散層
を有する基体である請求項1〜5のいずれか1項記載の
無電解酸化亜鉛皮膜の形成方法。
6. The substrate on which the catalyst layer is formed is formed by depositing Sn, Ag, and Pd on the surface of a non-conductive substrate by using Sn: Ag: Pd.
= (1 to 10): (1 to 10): a substrate having a high-density Pd nucleus dispersion layer on which a catalyst layer having a weight ratio of (1 to 10) is formed. The method for forming an electroless zinc oxide film according to the above item.
【請求項7】 上記触媒層が、Sn,Ag,Pdからな
る触媒核を1500核/μm2以上の核密度で有する請
求項1〜6のいずれか1項記載の無電解酸化亜鉛皮膜の
形成方法。
7. The electroless zinc oxide film according to claim 1, wherein the catalyst layer has a catalyst nucleus composed of Sn, Ag, and Pd at a nucleus density of 1500 nuclei / μm 2 or more. Method.
【請求項8】 上記触媒層の平均粗さが0.5nm以下
である請求項1〜7のいずれか1項記載の無電解酸化亜
鉛皮膜の形成方法。
8. The method for forming an electroless zinc oxide film according to claim 1, wherein the average roughness of the catalyst layer is 0.5 nm or less.
【請求項9】 上記触媒層の触媒核の粒子サイズが2n
m以下である請求項1〜8のいずれか1項記載の無電解
酸化亜鉛皮膜の形成方法。
9. The catalyst core of the catalyst layer has a particle size of 2n.
The method for forming an electroless zinc oxide film according to any one of claims 1 to 8, which is not more than m.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004323946A (en) * 2003-04-28 2004-11-18 New Industry Research Organization Micropatterning method by liquid phase deposition
JP2007126743A (en) * 2005-10-04 2007-05-24 Okuno Chem Ind Co Ltd Pretreatment method for electroless plating and method for forming electroless plating film
JP2011159729A (en) * 2010-01-29 2011-08-18 Fujifilm Corp Method of forming conductive zinc oxide laminated film, and method of manufacturing photoelectric conversion element
JP2013122531A (en) * 2011-12-12 2013-06-20 Konica Minolta Business Technologies Inc Method of forming electrode relating to heat fixing belt, heat fixing belt, and fixing device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05306470A (en) * 1991-12-06 1993-11-19 Hitachi Chem Co Ltd Catalytic solution for selective electroless plating
JPH08144061A (en) * 1994-11-24 1996-06-04 Japan Energy Corp Metallizing of insulating material
JPH08316612A (en) * 1995-05-15 1996-11-29 Ibiden Co Ltd Printed circuit board and manufacturing method
JPH10245682A (en) * 1997-03-03 1998-09-14 Fujitsu Ltd Formation of wiring and wiring board
JP2000008180A (en) * 1998-06-18 2000-01-11 Matsushita Electric Ind Co Ltd Transparent zinc oxide film and its production
JP2000096252A (en) * 1998-09-18 2000-04-04 C Uyemura & Co Ltd Method for plating to hard disk substrate
JP2000336486A (en) * 1999-05-28 2000-12-05 Osaka City Substrate applied with catalytic nucleus, catalyzing treatment to substrate and electroless plating method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05306470A (en) * 1991-12-06 1993-11-19 Hitachi Chem Co Ltd Catalytic solution for selective electroless plating
JPH08144061A (en) * 1994-11-24 1996-06-04 Japan Energy Corp Metallizing of insulating material
JPH08316612A (en) * 1995-05-15 1996-11-29 Ibiden Co Ltd Printed circuit board and manufacturing method
JPH10245682A (en) * 1997-03-03 1998-09-14 Fujitsu Ltd Formation of wiring and wiring board
JP2000008180A (en) * 1998-06-18 2000-01-11 Matsushita Electric Ind Co Ltd Transparent zinc oxide film and its production
JP2000096252A (en) * 1998-09-18 2000-04-04 C Uyemura & Co Ltd Method for plating to hard disk substrate
JP2000336486A (en) * 1999-05-28 2000-12-05 Osaka City Substrate applied with catalytic nucleus, catalyzing treatment to substrate and electroless plating method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004323946A (en) * 2003-04-28 2004-11-18 New Industry Research Organization Micropatterning method by liquid phase deposition
JP2007126743A (en) * 2005-10-04 2007-05-24 Okuno Chem Ind Co Ltd Pretreatment method for electroless plating and method for forming electroless plating film
JP2011159729A (en) * 2010-01-29 2011-08-18 Fujifilm Corp Method of forming conductive zinc oxide laminated film, and method of manufacturing photoelectric conversion element
JP2013122531A (en) * 2011-12-12 2013-06-20 Konica Minolta Business Technologies Inc Method of forming electrode relating to heat fixing belt, heat fixing belt, and fixing device

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