US20150258582A1 - Substrate processing device - Google Patents

Substrate processing device Download PDF

Info

Publication number
US20150258582A1
US20150258582A1 US14/435,558 US201314435558A US2015258582A1 US 20150258582 A1 US20150258582 A1 US 20150258582A1 US 201314435558 A US201314435558 A US 201314435558A US 2015258582 A1 US2015258582 A1 US 2015258582A1
Authority
US
United States
Prior art keywords
substrate
heater
wafer
temperature
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US14/435,558
Other languages
English (en)
Inventor
Akio Hashizume
Takashi Ota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Assigned to SCREEN Holdings Co., Ltd. reassignment SCREEN Holdings Co., Ltd. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OTA, TAKASHI, HASHIZUME, AKIO
Publication of US20150258582A1 publication Critical patent/US20150258582A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1002—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
    • B05C11/1015—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to a conditions of ambient medium or target, e.g. humidity, temperature ; responsive to position or movement of the coating head relative to the target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • B05C9/14—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating or cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Definitions

  • the present invention relates to a substrate processing apparatus that processes substrates such as semiconductor wafers, glass substrates for liquid crystal display devices, substrates for plasma display devices, substrates for FED (Field Emission Display) devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates and substrates for solar cell.
  • substrates such as semiconductor wafers, glass substrates for liquid crystal display devices, substrates for plasma display devices, substrates for FED (Field Emission Display) devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates and substrates for solar cell.
  • processing for supplying a processing liquid to surfaces of substrates, such as semiconductor wafers or glass substrates for liquid crystal display panels, to clean the surface of the substrate with the processing liquid are performed.
  • the substrate In the processing of the substrate, the substrate is rotated together with the spin base of the spin chuck. Then, a chemical liquid is supplied from the nozzle around the rotation center of the surface of the substrate being rotated. The chemical liquid supplied onto the surface of the substrate receives a centrifugal force produced by the rotation of the substrate and flows on the surface of the substrate toward a peripheral edge portion. In this way, the chemical liquid flows over the entire surface of the substrate, and thus chemical liquid processing on the surface of the substrate is achieved.
  • rinse processing is performed that washes away the chemical liquid adhered to the substrate with pure water.
  • the pure water is supplied from the nozzle to the surface of the substrate that is being rotated by the spin chuck, and the pure water is spread by receiving the centrifugal force produced by the rotation of the substrate, with the result that the chemical liquid adhered to the surface of the substrate is washed away.
  • Patent Literature 1 As the substrate processing apparatus of the single substrate processing type described above, a substrate processing apparatus as disclosed in Patent Literature 1 below is known that incorporates a heater in the spin base of the spin chuck and that heats the substrate placed on the spin base to a high temperature. Hence, the chemical liquid on the part in contact with the surface of the substrate is increased in temperature, and thus it is possible to enhance the processing capacity of the chemical liquid, with the result that the processing rate in the chemical liquid processing can be enhanced.
  • Patent Literature 1 Japanese Patent Application Publication No. 2008-4879
  • the surface temperature (the temperature of the heater) of the spin base is heated to an extremely high temperature.
  • the amount of power supplied to the heater is limited, with the result that there is an upper limit for the set temperature of the heater. Hence, it is likely that it is impossible to heat the substrate to a desired high temperature.
  • a substrate processing apparatus is adapted to process a substrate, and includes a substrate holding means that holds the substrate; a processing liquid supplying means that supplies the processing liquid to a surface of the substrate held by the substrate holding means; a substrate rotating means that rotates the substrate held by the substrate holding means; a heater that is disposed opposite the substrate held by the substrate holding means and that heats the substrate; a heater supporting member that supports the heater independently of the substrate holding means and a moving means that moves at least one of the substrate holding member and the heater supporting member such that the heater and the substrate held by the substrate holding means approach/leave each other.
  • the heater Since the heater is not supported by the substrate holding means, even while the substrate is being rotated, the heater is not rotated but remains stationary. In other words, it is not necessary to provide an arrangement of a rotatable heater, and hence the supply of power to the heater does not need to be performed via a rotating electrical contact. Hence, since the amount of power supplied to the heater is not limited, it is possible to heat the substrate to a desired high temperature.
  • the heater includes an opposing surface that is parallel to and opposite the substrate held by the substrate holding means, and heats the substrate with radiation heat of the opposing surface, and the opposing surface is divided into a plurality of opposing regions that can make the amounts of heat generated per unit area differ from each other.
  • the opposing surface of the heater has a larger area, it is difficult to keep the temperature of the heater uniform over the entire area of the opposing surface.
  • the opposing surface of the heater is divided into a plurality of opposing regions, and the opposing regions are individually adjusted in temperature.
  • the respective opposing regions are adjusted to be a uniform temperature, and thus it is possible to keep the entire area of the opposing surface at the uniform temperature.
  • the amounts of heat generated per unit area in the plurality of opposing regions are set such that as the opposing regions extend away from a rotation axis by rotation of the substrate with the substrate rotating means, the amounts are increased.
  • the temperature of the liquid is decreased.
  • the temperature of the processing liquid is relatively high in the center portion, the temperature of the processing liquid is relatively low in the peripheral edge portion, the temperature of the center portion of the surface of the substrate is relatively high by heat exchange between the processing liquid and the ambient atmosphere and the like and the temperature of the peripheral edge portion of the surface of the substrate is relatively low. Consequently, variations in processing rate on the surface of the substrate such as in which the processing by the processing liquid proceeds fast in the center portion of the surface of the substrate and the processing by the processing liquid proceeds relatively slow in the circumferential portion of the surface of the substrate may be produced.
  • the amounts of heat generated per unit area in the plurality of opposing regions are set such that as the opposing regions extend away from a rotation axis by rotation of the substrate, the amounts are increased, and thus the temperature of the processing liquid can be uniform over the entire area of the substrate. In this way, over the entire area of the surface of the substrate, the uniform processing using the processing liquid can be performed.
  • the plurality of opposing regions may include a circular region with the rotation axis in the center and one or a plurality of annular regions that surround the outer circumference of the circular region.
  • At least one of the annular regions is divided into a plurality of divided regions in a circumferential direction, and the plurality of divided regions are provided such that the divided regions can make the amounts of heat generated per unit area in the opposing surface differ from each other.
  • the opposing surface of the heater When the opposing surface of the heater has a larger area, it is difficult to keep the temperature of the heater uniform in the circumferential direction of the opposing surface.
  • the opposing surface of the heater is divided into a plurality of opposing regions in the circumferential direction, and the opposing regions can be individually adjusted in temperature. In this way, even when the opposing surface of the heater has a larger area, it is possible to keep the opposing surface at a uniform temperature in the circumferential direction.
  • the substrate holding means may include a plate-shaped base portion and a substrate supporting portion that is attached to the base portion and that supports the substrate while the substrate supporting portion is spaced apart from the base portion, and the heater may be disposed so as to be housed in a space partitioned by the base portion and the substrate supported by the substrate supporting portion.
  • the heater supporting member includes a support rod which is inserted through the base portion without contact with the base portion in a thickness direction and whose one end is coupled to the heater.
  • the support rod is inserted through the base portion without contact with the base portion in the thickness direction.
  • FIG. 1 is a cross-sectional view schematically showing the arrangement of a substrate processing apparatus according to a first preferred embodiment of the present invention.
  • FIG. 2 is a perspective view showing the arrangement of a heater shown in FIG. 1 .
  • FIG. 3 is a block diagram showing the electrical arrangement of the substrate processing apparatus shown in FIG. 1 .
  • FIG. 4 is a process diagram for illustrating a first processing example of a resist removing processing performed by the substrate processing apparatus shown in FIG. 1 .
  • FIG. 5 is a timing chart for illustrating the processing example of FIG. 4 .
  • FIGS. 6A to 6C are schematic drawings for illustrating the processing example of FIG. 4 .
  • FIGS. 6D to 6F are schematic drawings for illustrating steps following FIG. 6C .
  • FIGS. 6G to 6I are schematic drawings for illustrating steps following FIG. 6F .
  • FIG. 6J is a schematic drawing for illustrating a step following FIG. 6I .
  • FIG. 7 is a timing chart for illustrating a second processing example of the resist removing processing performed by the substrate processing apparatus shown in FIG. 1 .
  • FIG. 8 is a plan view schematically showing the arrangement of a substrate processing apparatus according to a second preferred embodiment of the present invention.
  • FIG. 9 is a plan view schematically showing the arrangement of a substrate processing apparatus according to a third preferred embodiment of the present invention.
  • FIG. 10 is a plan view schematically showing the arrangement of a substrate processing apparatus according to a fourth preferred embodiment of the present invention.
  • FIG. 1 is a cross-sectional view schematically showing the arrangement of a substrate processing apparatus 1 according to a first preferred embodiment of the present invention.
  • the substrate processing apparatus 1 is an apparatus of a single substrate processing type that is used in processing which removes an unnecessary resist from the surface of the wafer W, after, for example, ion implantation processing for implanting an impurity to the surface (main surface) of a silicon wafer (hereinafter referred to as a “wafer”) W, which is an example of a substrate, and dry etching processing.
  • a wafer silicon wafer
  • the substrate processing apparatus 1 includes a spin chuck (substrate holding means) 2 that holds the wafer W horizontally to rotate it within a processing chamber 6 partitioned by a dividing wall (not shown), a heater 3 that is disposed opposite the lower surface of the wafer W held by the spin chuck 2 and that heats the wafer W from below, a first chemical liquid nozzle (processing liquid supplying means) 4 that supplies a sulfuric acid/hydrogen peroxide mixture liquid (SPM liquid) to the surface (upper surface) of the wafer W held by the spin chuck 2 and a second chemical liquid nozzle (processing liquid supplying means) 5 that supplies a SC 1 (ammonia-hydrogen peroxide mixture) to the surface (upper surface) of the wafer W held by the spin chuck 2 .
  • a spin chuck substrate holding means
  • SC 1 ammonia-hydrogen peroxide mixture
  • the spin chuck 2 for example, a clamping type spin chuck is adopted.
  • the spin chuck 2 includes a cylindrical rotation shaft 11 that extends vertically, a disk-shaped spin base (base portion) 12 that is attached to the upper end of the rotation shaft 11 in a horizontal position, a plurality of clamping members (substrate supporting portion) 13 that are disposed on the spin base 12 and a spin motor (substrate rotating means) 14 that is coupled to the rotation shaft 11 .
  • the spin chuck 2 brings the respective clamping members 13 into contact with the circumferential end surface of the wafer W, and thereby can hold the wafer W by clamping it from the circumference.
  • the rotation drive force of the spin motor 14 is input to the rotation shaft 11 , and thus the wafer W is rotated around a vertical rotation axis A 1 that passes through the center of the wafer W.
  • the first chemical liquid nozzle 4 is, for example, a straight type nozzle that discharges the SPM liquid in a state of continuous flow.
  • a SPM liquid supplying pipe 16 through which a predetermined high-temperature (for example, about 160° C.) SPM liquid is supplied from a SPM liquid supply source is connected to the first chemical liquid nozzle 4 .
  • a SPM liquid valve 17 for opening and closing the SPM liquid supplying pipe 16 is provided in the SPM liquid supplying pipe 16 . When the SPM liquid valve 17 is opened, the SPM liquid is supplied from the SPM liquid supplying pipe 16 to the first chemical liquid nozzle 4 whereas when the SPM liquid valve 17 is closed, the supply of the SPM liquid from the SPM liquid supplying pipe 16 to the first chemical liquid nozzle 4 is stopped.
  • a first nozzle movement mechanism 18 is coupled to the first chemical liquid nozzle 4 .
  • the first nozzle movement mechanism 18 moves the first chemical liquid nozzle 4 between an upper position (on the rotation axis A 1 ) of the rotation center of the wafer W held by the spin chuck 2 and a home position provided in a position on the side of the spin chuck 2 .
  • the second chemical liquid nozzle 5 is, for example, a straight type nozzle that discharges the SC 1 in a state of continuous flow.
  • a SC 1 supplying pipe 19 through which the SC 1 whose temperature is adjusted to a predetermined high temperature (for example, about 60° C.) is supplied from a SC 1 supply source is connected to the second chemical liquid nozzle 5 .
  • a SC 1 valve 20 for opening and closing the SC 1 supplying pipe 19 is provided in the SC 1 supplying pipe 19 .
  • the SC 1 valve 20 is opened, the SC 1 is supplied from the SC 1 supplying pipe 19 to the second chemical liquid nozzle 5 whereas when the SC 1 valve 20 is closed, the supply of the SC 1 from the SC 1 supplying pipe 19 to the second chemical liquid nozzle 5 is stopped.
  • a second nozzle movement mechanism 21 is coupled to the second chemical liquid nozzle 5 .
  • the second nozzle movement mechanism 21 moves the second chemical liquid nozzle 5 between the upper position (on the rotation axis A 1 ) of the rotation center of the wafer W held by the spin chuck 2 and the home position provided in a position on the side of the spin chuck 2 .
  • the substrate processing apparatus 1 further includes a room-temperature rinse liquid nozzle (processing liquid supplying means) 30 and a high-temperature rinse liquid nozzle (processing liquid supplying means) 35 .
  • the room-temperature rinse liquid nozzle 30 is a straight type nozzle that discharges DIW (deionized water), which is an example of the rinse liquid, in a state of continuous flow.
  • DIW deionized water
  • the DIW of room temperature (for example, about 25° C., the same temperature as the room temperature (RT) of the processing chamber 6 ) is discharged from the room-temperature rinse liquid nozzle 30 .
  • the room-temperature rinse liquid nozzle 30 is disposed with its discharge port facing the center portion on the upper surface of the wafer W held by the spin chuck 2 .
  • a room-temperature rinse liquid supplying pipe 31 through which the DIW whose temperature is maintained at room temperature is supplied from a rinse liquid supply source is connected to the room-temperature rinse liquid nozzle 30 .
  • a room-temperature rinse liquid valve 32 for opening and closing the room-temperature rinse liquid supplying pipe 31 is provided in the room-temperature rinse liquid supplying pipe 31 .
  • the room-temperature rinse liquid valve 32 is opened, the DIW of room temperature is supplied from the room-temperature rinse liquid supplying pipe 31 to the room-temperature rinse liquid nozzle 30 , and the DIW of room temperature is discharged from the room-temperature rinse liquid nozzle 30 to the center portion on the upper surface of the wafer W.
  • the high-temperature rinse liquid nozzle 35 is, for example, a straight type nozzle that discharges the DIW (deionized water), which is an example of the rinse liquid, in a state of continuous flow.
  • the DIW of a predetermined high temperature (for example, about 80° C.) is discharged from the high-temperature rinse liquid nozzle 35 .
  • the high-temperature rinse liquid nozzle 35 is disposed with its discharge port facing the center portion on the upper surface of the wafer W held by the spin chuck 2 .
  • a high-temperature rinse liquid supplying pipe 36 through which the DIW whose temperature is heated to a high temperature is supplied from a rinse liquid supply source is connected to the high-temperature rinse liquid nozzle 35 .
  • a high-temperature rinse liquid valve 37 for opening and closing the high-temperature rinse liquid supplying pipe 36 is provided in the high-temperature rinse liquid supplying pipe 36 .
  • the high-temperature rinse liquid valve 37 When the high-temperature rinse liquid valve 37 is opened, the DIW of high temperature is supplied from the high-temperature rinse liquid supplying pipe 36 to the high-temperature rinse liquid nozzle 35 , and the DIW of high temperature is discharged from the high-temperature rinse liquid nozzle 35 to the center portion on the upper surface of the wafer W.
  • the heater 3 has a disk shape whose diameter is substantially equal to that of the wafer W or is slightly smaller than that of the wafer W, and has a horizontal position.
  • the heater 3 includes a first heater plate 3 A that is disk-shaped concentrically with the rotation axis A 1 , an annular second heater plate 3 B that surrounds the outer circumference of the first heater plate 3 A and an annular third heater plate 3 C that surrounds the outer circumference of the second heater plate 3 B.
  • the heater 3 is disposed in a space 39 between the upper surface of the spin base 12 and the lower surface of the wafer W held by the spin chuck 2 .
  • FIG. 2 is a perspective view showing the arrangement of the heater 3 .
  • the heater 3 will be described with reference to FIGS. 1 and 2 .
  • the first heater plate 3 A is disk-shaped, and a first resistor 28 A (see FIG. 1 ) is incorporated in a main body made of ceramic. On the upper surface of the first heater plate 3 A, a first opposing surface (circular region) 29 A that is horizontally flat and is circular is formed.
  • the second heater plate 3 B is annular plate-shaped, and a second resistor 28 B (see FIG. 1 ) is incorporated in a main body made of ceramic. On the upper surface of the second heater plate 3 B, a second opposing surface (annular region) 29 B that is horizontally flat and is annular is formed.
  • the third heater plate 3 C is annular plate-shaped, and a third resistor 28 C (see FIG. 1 ) is incorporated in a main body made of ceramic. On the upper surface of the third heater plate 3 C, a third opposing surface (annular region) 29 C that is horizontally flat and is annular is formed.
  • the second heater plate 3 B is coupled and fixed via a coupling unit (not shown) to the first heater plate 3 A. In its fixed state, there is little clearance between the inner circumference of the second heater plate 3 B and the outer circumference of the first heater plate 3 A.
  • the third heater plate 3 C is coupled and fixed via a coupling unit (not shown) to the second heater plate 3 B. In its fixed state, there is little clearance between the inner circumference of the third heater plate 3 C and the outer circumference of the second heater plate 3 B.
  • first to third opposing surfaces 29 A to 29 C are included in the same horizontal surface.
  • the first opposing surface 29 A is opposite a center region (circular region having about one third of the wafer diameter with the rotation center of the wafer W as the center) on the lower surface of the wafer W.
  • the second opposing surface 29 B is opposite a middle region (region other than the center region and an outer circumferential region, which will be subsequently described) on the lower surface of the wafer W.
  • the third opposing surface 29 C is opposite the outer circumferential region (outside region of a circle, with the rotation center of the wafer W as the center, having about two thirds of the diameter of the wafer W) on the lower surface of the wafer W.
  • the heater 3 is supported by a support rod (heater supporting member) 25 from below.
  • the support rod 25 is inserted, through a through hole 24 passing through the spin base 12 and the rotation shaft 11 in a vertical direction, along the rotation axis A 1 in the a vertical direction (the direction of the thickness of the spin base 12 ).
  • the upper end (one end) of the support rod 25 is fixed to the heater 3 .
  • the lower end (the other end) of the support rod 25 is fixed to a peripheral member below the spin chuck 2 , and thus the support rod 25 is held in a vertical position.
  • the support rod 25 is not in contact with the spin base 12 or the rotation shaft 11 within the through hole 24 , and thus the heater 3 is not supported by the spin chuck 2 .
  • the heater 3 and the spin chuck 2 are independent of each other. Hence, even when the spin chuck 2 rotates the wafer W, the heater 3 is not rotated but remains stationary (non-rotation state).
  • a feeder 26 A for the first resistor 28 A, a feeder 26 B for the second resistor 28 B and a feeder 26 C for the third resistor 28 C are inserted through the through hole 24 .
  • the upper ends of the feeders 26 A, 26 B and 26 C are connected to the first, second and third resistors 28 A, 28 B and 28 C, respectively.
  • the power supply to the resistors 28 A, 28 B and 28 C is performed without intervention of a rotating electrical contact.
  • a rotatable heater If a rotatable heater is adopted, it is necessary to perform power supply to the heater via a rotating electrical contact. In this case, since the power supply is performed with intervention of the rotating electrical contact, the amount of power supply to the heater is limited, with the result that there is a possibility that wafer W cannot be heated to a desired high temperature.
  • the amount of power supply is not limited. In this way, it is possible to heat the wafer W to a desired high temperature.
  • the first resistor 28 A Power is supplied to the first resistor 28 A, thus the first resistor 28 A generates heat and the first heater plate 3 A is brought into a heated state.
  • the first opposing surface 29 A functions as a heat generating surface.
  • Power is supplied to the second resistor 28 B thus the second resistor 28 B generates heat and the second heater plate 3 B is brought into a heated state.
  • the second opposing surface 29 B functions as a heat generating surface.
  • power is supplied to the third resistor 28 C, thus the third resistor 28 C generates heat and the third heater plate 3 C is brought into a heated state. In this way, the third opposing surface 29 C functions as a heat generating surface.
  • the first opposing surface 29 A, the second opposing surface 29 B and the third opposing surface 29 C constitute an opposing surface 29 .
  • the power supply to the first, second and third resistors 28 A, 28 B and 28 C is individually performed, and the amount of power to each of the resistors 28 A, 28 B and 28 C is individually controlled.
  • the amount of heat generated the surface temperatures of the first opposing surface 29 A, the second opposing surface 29 B and the third opposing surface 29 C
  • a heater lift mechanism (moving means) 23 that raises and lowers the heater 3 while maintaining the horizontal position is coupled to the support rod 25 .
  • the heater lift mechanism 23 is arranged with, for example, a ball screw and a motor.
  • the heater 3 is raised and lowered between a zero height position (leaving position, see FIG. 6A and the like) HL 0 where its lower surface is separate from the upper surface of the spin base 12 with a predetermined minute spacing left therebetween and a third height position (close position, see FIG. 6B and the like) HL 3 where the opposing surface 29 of the heater 3 is disposed to oppose the lower surface of the wafer W with a minute spacing W 3 .
  • a zero height position (leaving position, see FIG. 6A and the like)
  • HL 0 where its lower surface is separate from the upper surface of the spin base 12 with a predetermined minute spacing left therebetween
  • a third height position close position, see FIG. 6B and the like
  • FIG. 3 is a block diagram showing the electrical arrangement of the substrate processing apparatus 1 .
  • the substrate processing apparatus 1 has a control portion 40 including a microcomputer.
  • the control portion 40 controls the operations of the spin motor 14 , the first and second nozzle movement mechanisms 18 and 21 and the like.
  • the control portion 40 controls the amount of heat generated by the heater 3 .
  • the control portion 40 controls the opening and closing operation on the SPM liquid valve 17 , the SC 1 valve 20 , the room-temperature rinse liquid valve 32 and the high-temperature rinse liquid valve 37 .
  • FIG. 4 is a process diagram for illustrating a first processing example of a resist removing processing performed by the substrate processing apparatus 1 .
  • FIG. 5 is a timing chart for mainly illustrating the details of control by the control portion 40 from a SPM liquid supplying step in step S 3 to spin drying in step S 7 , which will be subsequently described.
  • FIGS. 6A to 6J are schematic drawings for illustrating the first processing example. In FIGS. 6A to 6J , the illustration of the arrangement below the spin base 12 is omitted.
  • the first processing example of the resist removing processing will be described below with reference to FIGS. 1 to 5 and FIGS. 6A to 6J .
  • the amount of heat generated per unit area of the third opposing surface 29 C is set higher than the amount of heat generated per unit area of the second opposing surface 29 B.
  • the amount of heat generated per unit area of the second opposing surface 29 B is set higher than the amount of heat generated per unit area of the first opposing surface 29 A.
  • the amount of heat generated per unit area of the first to third opposing surfaces 29 A, 29 B and 29 C is set such that it is increased as they extend away from the rotation axis A 1 .
  • the temperature TC 1 of the third opposing surface 29 C is set higher than the surface temperature TB 1 of the second opposing surface 29 B, and the surface temperature TB 1 of the second opposing surface 29 B is set higher than the surface temperature TA 1 of the first opposing surface 29 A (TC 1 >TB 1 >TA 1 ).
  • the heater 3 When the heater 3 is turned on, the heater 3 is disposed close to the wafer W, and thus the wafer W is heated by the heater 3 .
  • a transport robot (not shown) is controlled, and the unprocessed wafer W is transported into the processing chamber 6 (see FIG. 1 ) (step S 1 ).
  • the wafer W is passed to the spin chuck 2 with its surface facing upward.
  • the heater 3 has already been turned on (driven state), and the height position of the heater 3 is the zero height level HL 0 .
  • the first and second chemical liquid nozzles 4 and 5 are disposed in the home position so as not to interfere with the transport of the wafer W.
  • the amount of heat generated per unit area of each of the first to third opposing surfaces 29 A, 29 B and 29 C is kept at a previously set value. In other words, the output level of the heater 3 is not changed.
  • the control portion 40 controls the heater lift mechanism 23 to raise the heater 3 to the third height level HL 3 , which is the uppermost level by controlling the heater lift mechanism 23 .
  • the spacing W 3 between the lower surface of the wafer W held by the spin chuck 2 and the opposing surface 29 of the heater 3 is, for example, 0.5 mm.
  • the wafer W held by the spin chuck 2 with the heater 3 at the third height level HL 3 is heated with radiation heat from the heater 3 .
  • the first, second and third opposing surfaces 29 A, 29 B and 29 C are parallel to the lower surface of the wafer W.
  • the amount of heat per unit area given by the heater 3 to a part of the wafer W opposing the third opposing surface 29 C is higher than the amount of heat per unit area given to a part of the wafer W opposing the second opposing surface 29 B.
  • the amount of heat per unit area given by the heater 3 to the part of the wafer W opposing the second opposing surface 29 B is higher than the amount of heat per unit area given to a part of the wafer W opposing the first opposing surface 29 A.
  • the amount of heat per unit area given to the wafer W is set higher as the opposing surface extends away from the rotation axis A 1 .
  • variations in temperature of the wafer W are produced through the heating by the heater 3 , the surface temperature of the wafer W is heated to about 160° C.
  • the control portion 40 controls the first nozzle movement mechanism 18 to move the first chemical liquid nozzle 4 above the rotation center of the wafer W.
  • the control portion 40 controls the spin motor 14 to start the rotation of the wafer W (step S 2 ).
  • the wafer W is accelerated to a predetermined liquid processing speed (for example, 500 to 1000 rpm), and thereafter is maintained at the liquid processing speed.
  • the control portion 40 opens the SPM liquid valve 17 to discharge the SPM liquid of, for example, 160° C. from the first chemical liquid nozzle 4 .
  • the SPM liquid discharged from the first chemical liquid nozzle 4 is supplied to the center portion of the surface of the wafer W being rotated (step S 3 : the SPM liquid supplying step).
  • the SPM liquid supplied to the surface of the wafer W receives a centrifugal force produced by the rotation of the wafer W, and flows to the peripheral edge portion on the surface of the wafer W.
  • the SPM liquid is spread over the entire surface of the wafer W, and the resist formed on the surface of the wafer W is peeled by the strong oxidizing power of peroxomonosulfuric acid contained in the SPM liquid.
  • the resist is lifted off from the surface of the wafer W is made to flow away by the SPM liquid and is removed from the surface of the wafer W. In this way, the reaction between the resist on the surface of the wafer W and the SPM liquid is facilitated, and the removal of the resist from the surface of the wafer W proceeds.
  • the SPM liquid supplied to the center portion of the surface of the wafer W performs heat exchange with the ambient atmosphere and the like. Hence, in the course of flowing from the center portion of the surface of the wafer W to the peripheral edge portion, heat is removed from the wafer W to the SPM liquid. Then, as a result of the heat exchange between the SPM liquid and the wafer W, heat may be removed from the peripheral edge portion of the wafer W. The amount of heat removed from the wafer W is increased as the surface of the wafer W extends to the peripheral edge portion of the surface of the wafer W.
  • the amount of heat generated per unit area of the first, second and third opposing surfaces 29 A, 29 B and 29 C is set such that the amount of heat given to the wafer W and the amount of heat removed from the wafer W are uniform in the individual portions of the wafer W. Consequently, the surface temperature of the wafer W is distributed uniformly over the entire area at about 160° C. In this way, the processing using the SPM liquid can be performed over the entire surface of the wafer W.
  • the control portion 40 closes the SPM liquid valve 17 to return the first chemical liquid nozzle 4 from the rotation center of the wafer W to the home position.
  • the control portion 40 controls the heater lift mechanism 23 to lower the heater 3 to a second height level HL 2 that is a height position lower than the third height level HL 3 .
  • a spacing W 2 between the lower surface of the wafer W held by the spin chuck 2 and the opposing surface 29 of the heater 3 is about 10 mm.
  • the wafer W held by the spin chuck 2 is heated to about 80° C. In other words, the wafer W whose temperature is about 160 ° C. is cooled by the lowering of the heater 3 .
  • the control portion 40 opens the high-temperature rinse liquid valve 37 to supply the DIW of about 80° C. from the discharge port of the high-temperature rinse liquid nozzle 35 to around the rotation center of the wafer W (step S 4 : an intermediate rinse step).
  • the DIW supplied to the surface of the wafer W receives the centrifugal force produced by the rotation of the wafer W, and flows to the peripheral edge portion on the surface of the wafer W. In this way, the SPM liquid adhered to the surface of the wafer W is washed away.
  • the DIW since heat from the heater 3 is given via the wafer W to the DIW flowing on the surface, the DIW is prevented from being lowered in temperature from about 80° C., and flows to the peripheral edge portion of the wafer W.
  • the wafer W may be damaged if the DIW of room temperature is suddenly supplied to the wafer W whose temperature has so far been heated to a high temperature of about 160° C. Hence, the DIW whose temperature is warmed at about 80° C. is used to perform rinsing. However, even in this case, it is necessary to wait for the start of the intermediate rinse step in step S 4 until the wafer W is lowered in temperature to at least about 90° C.
  • the heater 3 is not lowered in temperature immediately after the heater 3 is turned from on to off .
  • the heater 3 is disposed at the third height level HL 3 , for a certain time after the heater 3 is turned off, the heater 3 continues to heat the wafer W with a large amount of heat.
  • it is necessary to take a considerably long time to sufficiently lower the temperature of the heater 3 , with the result that the processing time of the entire resist removing processing may be prolonged.
  • the spacing between the heater 3 and the wafer W is increased from the spacing W 3 to the spacing W 2 , thus reducing the added amount of heat to the wafer W. In this way, it is possible to cool the wafer W. Consequently, within a short time after the completion of the SPM liquid supplying step in step S 3 , it is possible to start the intermediate rinse step in step S 4 .
  • the control portion 40 controls the heater lift mechanism 23 t lower the heater 3 to a first height level HL 1 that is a height position lower than the second height level HL 2 .
  • the spacing W 1 between the lower surface of the wafer W held by the spin chuck 2 and the opposing surface 29 of the heater 3 is, for example, 20 mm.
  • the wafer W held by the spin chuck 2 with the heater 3 at the first height level HL 1 is heated with the radiation heat from the heater 3 .
  • the first, second and third opposing surfaces 29 A, 29 B and 29 C are parallel to the lower surface of the wafer W.
  • the amount of heat per unit area given by the heater 3 to the part of the wafer W opposing the third opposing surface 29 C is higher than the amount of heat per unit area given to the part of the wafer W opposing the second opposing surface 29 B.
  • the amount of heat per unit area given by the heater 3 to the part of the wafer W opposing the second opposing surface 29 B is higher than the amount of heat per unit area given to the part of the wafer W opposing the first opposing surface 29 A. In other words, the amount of heat per unit area given to the wafer W is set higher as the opposing surface extends away from the rotation axis A 1 .
  • variations in temperature of the wafer W are produced through the heating by the heater 3 , the surface temperature of the wafer W is heated to about 60° C. In other words, the surface temperature of the wafer W is lowered from about 80° C. as it is to about 60° C. by the lowering of the heater 3 .
  • the control portion 40 controls the second nozzle movement mechanism 21 to move the second chemical liquid nozzle 5 to a position above the wafer W.
  • the control portion 40 opens the SC 1 valve 20 to discharge the SC 1 of, for example, about 60° C. from the second chemical liquid nozzle 5 . Since the SC 1 has a liquid temperature of about 60° C., the processing capacity of the SC 1 is high.
  • the SC 1 discharged from the second chemical liquid nozzle 5 is supplied to the center portion on the surface of the wafer W being rotated (step S 5 : a SC 1 supplying step).
  • the SC 1 supplied to the surface of the wafer W receives the centrifugal force produced by the rotation of the wafer W, and flows to the peripheral edge portion on the surface of the wafer W. In this way, the SC 1 is supplied to the entire surface of the wafer W uniformly, and it is possible to remove, by the chemical capability of the SC 1 , foreign matter such as a resist residue and particles adhered to the surface of the wafer W.
  • the SC 1 liquid supplied to the center portion of the surface of the wafer W performs heat exchange with the ambient atmosphere and the like. Hence, in the course of flowing from the center portion on the surface of the wafer W to the peripheral edge portion, heat is removed from the wafer W to the SC 1 . Then, as a result of the heat exchange between the SC 1 and the wafer W, heat may be removed from the peripheral edge portion of the wafer W. The amount of heat removed from the wafer W is increased as the surface of the wafer W extends to the peripheral edge portion.
  • the amount of heat generated per unit area of the first, second and third opposing surfaces 29 A, 29 B and 29 C is set such that the amount of heat given to the wafer W and the amount of heat removed from the wafer W are uniform in the individual portions of the wafer W. Consequently, the surface temperature of the wafer W is distributed uniformly over the entire area at about 60° C. In this way, the processing using the SC 1 can be performed over the entire surface of the wafer W.
  • the control portion 40 closes the SC 1 valve 20 .
  • the control portion 40 controls the heater lift mechanism 23 to lower the heater 3 to the zero height level HL 0 that is a height position lower than the first height level HL 1 .
  • a spacing W 0 between the lower surface of the wafer W held by the spin chuck 2 and the opposing surface 29 of the heater 3 is, for example, 40 mm.
  • the spacing between the heater 3 and the wafer W held by the spin chuck 2 is excessively extended, and thus only a small amount of radiation heat reaches the wafer W from the heater 3 , with the result that the effect on the wafer W is small. In other words, the wafer W is not heated by the heater 3 .
  • the surface temperature of the wafer W remains a room temperature.
  • the control portion 40 opens the room-temperature rinse liquid valve 32 to supply the DIW of room temperature from the discharge port of the room-temperature rinse liquid nozzle 30 to around the rotation center of the wafer W (step S 6 : a final rinse step).
  • the DIW supplied to the surface of the wafer W receives the centrifugal force produced by the rotation of the wafer W, and flows to the peripheral edge portion of the wafer W on the surface of the wafer W. In this way, the SC 1 adhered to the surface of the wafer W is washed away.
  • the DIW is prevented from being heated via the wafer W.
  • step S 4 instead of the DIW, as the rinse liquid, carbonated water, electrolytic ion water, ozone water, reduced water (hydrogen water), magnetic water or the like can be adopted.
  • step S 7 the control portion 40 controls the heater lift mechanism 23 to raise the heater 3 from the zero height level HL 0 to the first height level HL 1 .
  • the control portion 40 drives the spin motor 14 to increase the rotation speed of the wafer W to a predetermined high rotation speed (for example, 1500 to 2500 rpm), and swings away the DIW adhered to the wafer W to perform the spin drying (step S 7 ). By the spin drying, the DIW adhered to the wafer W is removed.
  • a predetermined high rotation speed for example, 1500 to 2500 rpm
  • the control portion 40 drives the spin motor 14 to stop the rotation of the spin chuck 2 .
  • the control portion 40 also turns off the heater 3 (non-driven state) and controls the heater lift mechanism 23 to lower the heater 3 to the zero height level HL 0 . In this way, the resist removing processing for one wafer W is completed, and the processed wafer W is transported by the transport robot from the processing chamber 6 (step S 8 ).
  • FIG. 7 is a timing chart for illustrating the second processing example.
  • the second processing example differs from the first processing example in that, in each of the steps, not only the spacing between the heater 3 and the wafer W but also the output level of the heater 3 (the outputs of the heater plates 3 A, 3 B and 3 C) is made to differ.
  • the output level is set at a third output level PL 3 at which the amount of heat generated per unit area of the heater 3 is the largest.
  • the heater 3 is at the third height level HL 3 . Although variations in temperature of the wafer W are produced through the heating by the heater 3 , the surface temperature of the wafer W is heated to about 160° C.
  • the output level is set at a second output level PL 2 at which the amount of heat generated per unit area of the heater is smaller than the third output level PL 3 .
  • the heater 3 is at the second height level HL 2 .
  • the output level is set at a first output level PL 1 at which the amount of heat generated per unit area of the heater 3 is smaller than the second output level PL 2 .
  • the heater 3 is at the first height level HL 1 .
  • the output level is set at a zero output level PL 0 at which heat is not generated by the heater 3 .
  • the heater 3 is at the zero height level HL 0 .
  • the wafer W is not heated by the heater 3 .
  • the surface temperature of the wafer W remains a room temperature (for example, about 25° C., the same temperature as the room temperature (RT) of the processing chamber 6 ).
  • the amount of heat from the heater 3 may be set small such that the radiation heat from the heater 3 located at the zero height level HL 0 little affects the wafer W.
  • the output level of the heater 3 is minimized when the wafer W is not heated, and thus while the heater 3 is kept in an on-state, it is possible to stop the heating the wafer W.
  • the heater 3 is temporarily turned off, it may be necessary to take a long time to increase the temperature of the heater 3 to a high temperature when the wafer W is heated again.
  • the heater 3 is not turned off, and thus thereafter, it is possible to reduce a time necessary to increase the temperature when the wafer W is heated again.
  • the amount of heat generated per unit area of the third opposing surface 29 C is set larger than the amount of heat generated per unit area of the second opposing surface 29 B, and the amount of heat generated per unit area of the second opposing surface 29 B is set larger than the amount of heat generated per unit area of the first opposing surface 29 A.
  • the output level of the heater 3 can be gradually changed (over a long time), as indicated by dashed lines of FIG. 7 , it may be changed rapidly (in an extremely short time).
  • the height position of the heater 3 may be changed simultaneously when the output level of the heater 3 is changed, as indicated by the dashed lines of FIG. 7 , it may be changed before the change of the output level of the heater 3 .
  • FIG. 8 is a plan view schematically showing the arrangement of a substrate processing apparatus 100 according to a second preferred embodiment of the present invention.
  • portions corresponding to the portions indicated in the first preferred embodiment described above are identified with the same symbols as in FIGS. 1 to 7 , and their description will be omitted.
  • the substrate processing apparatus 100 differs from the substrate processing apparatus 1 according to the first preferred embodiment in that, instead of the heater 3 , a heater 103 is provided.
  • the heater 103 has a disk shape whose diameter is substantially equal to that of the wafer W or is slightly smaller than that of the wafer W, and has a horizontal position.
  • the heater 103 includes, instead of the third heater plate 3 C, a heater plate 101 consisting of a plurality of (in FIG. 8 , for example, four) divided members 102 .
  • Each of the divided members 102 is arc plate-shaped and has the same elements. A plurality of (four) divided members 102 are combined, and thus the annular heater plate 101 is formed.
  • each of the divided members 102 is a resistor-type ceramic heater in which a resistor is incorporated in a main body made of ceramic.
  • an opposing region (divided region) 104 opposite the lower surface of the wafer W held by the spin chuck 2 is formed.
  • a plurality of opposing regions 104 constitute an opposing surface 129 .
  • the opposing surface 129 of the heater 103 is divided into a plurality of opposing regions 104 in a circumferential direction, and the temperatures of the opposing regions 104 are individually adjusted. In this way, even when as in the heater 103 , the opposing surface 129 has a larger area, it is possible to maintain the opposing surface 129 at a uniform temperature in the circumferential direction. Hence, it is possible to maintain the entire area of the opposing surface 129 at a uniform temperature.
  • the arrangement of the heater plate 101 is not limited to the arrangement in which the heater plate 101 is divided into a plurality of divided members 102 , and it may adopt an arrangement in which a plurality of resistors are incorporated in one annular main body and it is possible to individually control the amount of power supplied to each of the resistors.
  • FIG. 9 is a plan view schematically showing the arrangement of a substrate processing apparatus 200 according to a third preferred embodiment of the present invention.
  • the substrate processing apparatus 200 differs from the substrate processing apparatus 1 according to the first preferred embodiment in that, instead of the heater 3 , a heater 203 is provided.
  • the heater 203 has a disk shape whose diameter is substantially equal to that of the wafer W or is slightly smaller than that of the wafer W, and has a horizontal position.
  • a large number of honeycomb-shaped heater portions 201 are formed in which the opposing surface 229 is divided into the radial direction and the circumferential direction.
  • Each of the heater portions 201 has the same elements.
  • a resistor is disposed.
  • Power is individually supplied to the resistors of the heater portions 201 , and the amount of power supplied to the resistors is individually controlled. Hence, it is possible to individually control the amount of heat generated by the heater portions 201 (the surface temperature of the heater portions 201 ).
  • the opposing surface 229 of the heater 203 is divided into a plurality of heater portions 201 both in the circumferential direction and in the radial direction, and the heater portions 201 are individually adjusted in temperature.
  • the temperature of the plurality of heater portions 201 (the amount of heat generated per unit area) is set such that as the opposing surface extends away from the rotation axis A 1 , it is increased.
  • a temperature distribution is formed in which as the opposing surface extends away from the rotation axis A 1 , the temperature is increased.
  • the temperature of the processing liquid (the SPM liquid, the SC 1 or the like) flowing on the surface of the wafer W can be made uniform over the entire area of the wafer W, and the uniform processing using the processing liquid can be performed over the entire surface of the wafer W.
  • the temperature of the plurality of heater portions 201 (the amount of heat generated per unit area) is set at a uniform temperature in the circumferential direction. Since the individual portions of the opposing surface 229 are individually controlled to have the uniform temperature in the circumferential direction, even when as in the heater 203 , the opposing surface 229 has a larger area, it is possible to maintain the opposing surface 229 at the uniform temperature in the circumferential direction.
  • the substrate holding means is not limited to the arrangement in which the spin base such as the spin base is included.
  • FIG. 10 is a cross-sectional view schematically showing the arrangement of a substrate processing apparatus 300 according to a fourth preferred embodiment of the present invention.
  • the substrate processing apparatus 300 mainly differs from the substrate processing apparatus 1 according to the first preferred embodiment in that, as the substrate holding means, a spin chuck (substrate holding means) 301 not including the spin base is included.
  • the substrate processing apparatus 300 significantly differs from the substrate processing apparatus 1 in that the spin chuck 301 is housed in a sealed chamber 302 having a hermetically sealed internal space.
  • the spin chuck 301 includes an annular-plate-shaped motor rotor (substrate rotating means) 303 that is rotatably provided with the vertically extending rotation axis A 1 as the rotation center, a plurality of (for example, six) clamping members 304 that are disposed on the upper surface of the motor rotor 303 and an annular motor stator 305 (substrate rotating means) that is disposed outside the sealed chamber 302 so as to surround the side of the motor rotor 303 .
  • the motor stator 305 is annular with the rotation axis A 1 as the rotation center, and the inner circumference of the motor stator 305 is disposed with a minute spacing apart from the outer circumference of the motor rotor 303 .
  • the motor rotor 303 includes a back yoke 316 and a magnet 317 .
  • the back yoke 316 is a magnetic component that prevents the leakage of magnetic flux to maximize the magnetic force of the magnet 317 .
  • the back yoke 316 is annular and has a predetermined thickness in the axial direction.
  • a plurality of magnets 317 are provided and are attached such that they are aligned in the circumferential direction on the outer circumferential surface of the back yoke 316 .
  • the motor stator 305 is arranged with an unillustrated coil or the like, clamps a cup 306 , which will be subsequently described and surrounds the motor rotor 303 .
  • the spin chuck 301 brings the clamping members 304 into contact with the peripheral edge surface of the wafer W, and thereby can hold the wafer W by sandwiching it from the circumference. Then, with the wafer W held by the plurality of clamping members 304 , power is supplied from an unillustrated power supply to the motor rotor 303 and the motor stator 305 , and thus the wafer W is rotated together with the motor rotor 303 around the vertical rotation axis A 1 passing through the center of the wafer W.
  • the sealed chamber 302 is arranged by combining the bottomed-cylindrical cup 306 in which the spin chuck 301 is housed and a lid member 308 which blocks the upper portion opening 307 of the cup 306 .
  • the motor rotor 303 and the clamping members 304 of the spin chuck 301 are disposed to be housed, and in particular, the motor rotor 303 is disposed in a position close both to the bottom wall of the cup 306 and to the outer circumferential wall of the cup 306 .
  • the lid member 308 is bottomed-cylindrical with an opening facing downward.
  • a processing liquid nozzle (processing liquid supplying means) 309 is inserted through a position on the rotation axis A 1 of the wafer
  • the processing liquid including the SPM liquid, the high-temperature DIW, the SC 1 and the DIW described above is supplied to the processing liquid nozzle 309 , and the processing liquid is discharged from a discharge port formed in the lower end of the processing liquid nozzle 309 .
  • a sealing ring 310 is provided over the entire circumference.
  • the substrate processing apparatus 300 includes a heater 311 that is disposed opposite the lower surface of the wafer W held by the spin chuck 301 and that heats the wafer W from below, a heater stage 313 that supports the heater 311 from below and a heater lift mechanism (moving means) 312 that raises and lowers the heater 311 while maintaining the horizontal position.
  • the heater 311 is disposed in a region inside the motor rotor 303 in plan view, and has the same arrangement as the heater 3 of the first preferred embodiment.
  • the heater lift mechanism 312 is arranged with, for example, a ball screw and a motor.
  • the heater lift mechanism 312 is coupled to the heater stage 313 and raises and lowers the heater 311 together with the heater stage 313 .
  • the heater 311 is raised and lowered between the zero height position (leaving position, see FIG. 6A and the like) HL 0 and the third height position (close position, see FIG. 6B and the like) HL 3 .
  • the height position of the heater 311 is switched between the zero height level HL 0 , the first height level HL 1 (see FIG. 6F and the like), the second height level HL 2 (see FIG. 6D and the like) and the third height level HL 3 .
  • the spacing between the heater 311 and the wafer W can be changed.
  • the wafer W when the spacing between the heater 311 and the wafer W is narrow, the wafer W is heated by the heater 311 to a high temperature. Then, in this state, the spacing between the heater 311 and the wafer W is increased, and thus it is possible to reduce the amount of heat given to the wafer W, with the result that it is possible to cool the wafer W. It is also possible to achieve the same action effects as described in the first preferred embodiment.
  • the fourth preferred embodiment can be combined with the second preferred embodiment or the third preferred embodiment.
  • the heater 311 in the fourth preferred embodiment it is possible to adopt the heater 103 in the second preferred embodiment or the heater 203 in the third preferred embodiment.
  • the heater 3 or 103 is arranged with a plurality of plate heaters 3 A, 3 B, 3 C and 101 , the arrangement of a heater may be adopted in which a plurality of resistors are incorporated into a disk-shaped main body and the amount of power supplied to the resistors can be individually controlled.
  • the arrangement in which the third opposing surface 29 C is divided has been described as an example, the first opposing surface 29 A or the second opposing surface 29 B may be divided.
  • a temperature sensor 300 is incorporated into the heater 3 , 103 , 203 or 311 , and when a temperature detected by the temperature sensor 300 is lowered to a previously determined temperature, the subsequent processing (for example, the intermediate rinse processing in step S 6 ) may be performed.
  • the resistor-type ceramic heater has been described as an example, an infrared heater such as a halogen lamp can be adopted as the heater.
  • the spin chuck 2 may be raised and lowered. Both the heater 3 and the spin chuck 2 may be raised and lowered.
  • the first chemical liquid nozzle 4 is made to reciprocate between the rotation center of the wafer W and the peripheral edge portion, and thus a supply position on the surface of the wafer W to which the SPM liquid is guided from the first chemical liquid nozzle 4 may reciprocate within a range from the rotation center of the wafer W to the peripheral edge portion of the wafer W while drawing an arc-shaped trail intersecting the direction of the rotation of the wafer W.
  • the SPM liquid can be supplied more uniformly over the entire surface of the wafer W.
  • the second chemical liquid nozzle 5 is made to reciprocate between the rotation center of the wafer W and the peripheral edge portion, and thus a supply position on the surface of the wafer W to which the SC 1 is guided from the second chemical liquid nozzle 5 may reciprocate within the range from the rotation center of the wafer W to the peripheral edge portion of the wafer W while drawing an arc-shaped trail intersecting the direction of the rotation of the wafer W.
  • the SC 1 can be supplied more uniformly over the entire surface of the wafer W.
  • the first and second chemical liquid nozzles 4 and 5 may be a fixed nozzle.
  • the first and second chemical liquid nozzles 4 and 5 are fixed and disposed above the spin chuck 2 with the discharge port thereof facing the center portion on the upper surface of the wafer W held by the spin chuck 2 .
  • the invention can be applied to a substrate processing apparatus used on other processing.
  • a chemical liquid used in the processing a chemical liquid corresponding to the details of processing on the surface of the wafer W is used.
  • the SC 1 ammonia-hydrogen peroxide mixture
  • hydrofluoric acid BHF (Buffered HF) or the like
  • polymer removing processing is performed that removes a resist residue which is left as a polymer on the surface of the wafer W after peeling the resist
  • SC 1 a polymer removing liquid
  • SC 2 hydrofluoric acid/hydrogen peroxide mixture
  • SPM liquid sulfuric acid/hydrogen peroxide mixture
  • the rinse liquid is not limited to the DIW, and as the rinse liquid, carbonated water, electrolytic ion water, ozone water, hydrochloric acid water of dilution concentration (for example, about 10 to 100 ppm), reduced water (hydrogen water) or the like can be adopted.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
US14/435,558 2012-10-16 2013-08-29 Substrate processing device Abandoned US20150258582A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012229139A JP6168273B2 (ja) 2012-10-16 2012-10-16 基板処理装置および基板処理方法
JP2012-229139 2012-10-16
PCT/JP2013/073195 WO2014061353A1 (ja) 2012-10-16 2013-08-29 基板処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/073195 A-371-Of-International WO2014061353A1 (ja) 2012-10-16 2013-08-29 基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/401,892 Continuation US10497581B2 (en) 2012-10-16 2017-01-09 Substrate processing device

Publications (1)

Publication Number Publication Date
US20150258582A1 true US20150258582A1 (en) 2015-09-17

Family

ID=50487930

Family Applications (2)

Application Number Title Priority Date Filing Date
US14/435,558 Abandoned US20150258582A1 (en) 2012-10-16 2013-08-29 Substrate processing device
US15/401,892 Active US10497581B2 (en) 2012-10-16 2017-01-09 Substrate processing device

Family Applications After (1)

Application Number Title Priority Date Filing Date
US15/401,892 Active US10497581B2 (en) 2012-10-16 2017-01-09 Substrate processing device

Country Status (5)

Country Link
US (2) US20150258582A1 (enrdf_load_stackoverflow)
JP (1) JP6168273B2 (enrdf_load_stackoverflow)
KR (1) KR102132051B1 (enrdf_load_stackoverflow)
TW (1) TWI508793B (enrdf_load_stackoverflow)
WO (1) WO2014061353A1 (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160276379A1 (en) * 2013-03-29 2016-09-22 Shibaura Mechatronics Corporation Substrate processing apparatus and substrate processing method
JP2017069353A (ja) * 2015-09-29 2017-04-06 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
US20180311764A1 (en) * 2014-09-04 2018-11-01 Samsung Electronics Co., Ltd. Spot heater and device for cleaning wafer using the same
JP2020127048A (ja) * 2020-05-12 2020-08-20 芝浦メカトロニクス株式会社 基板処理装置
US10910213B2 (en) 2015-12-25 2021-02-02 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method
US11410863B2 (en) 2016-09-23 2022-08-09 SCREEN Holdings Co., Ltd. Substrate processing device including heater between substrate and spin base
US11456192B2 (en) * 2019-08-02 2022-09-27 Semigear, Inc. Apparatus and method for cooling substrate
US11465167B2 (en) 2017-03-24 2022-10-11 SCREEN Holdings Co., Ltd. Substrate treatment apparatus
US20230215740A1 (en) * 2021-12-30 2023-07-06 Semes Co., Ltd. Substrate treating apparatus and substrate treating method

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102229786B1 (ko) * 2014-05-26 2021-03-19 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR101919122B1 (ko) * 2014-08-12 2018-11-15 주식회사 제우스 공정 분리형 기판 처리장치 및 처리방법
WO2018161205A1 (en) 2017-03-06 2018-09-13 Acm Research (Shanghai) Inc. Apparatus for cleaning semiconductor substrates
JP6967922B2 (ja) * 2017-09-22 2021-11-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102030068B1 (ko) 2017-10-12 2019-10-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7004579B2 (ja) * 2018-01-15 2022-01-21 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
GB201901637D0 (en) * 2019-02-06 2019-03-27 Lam Res Ag Apparatus for processing a wafer, and method of controlling such an apparatus
KR102395805B1 (ko) * 2019-08-26 2022-05-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US20220390840A1 (en) * 2021-06-03 2022-12-08 Mks Instruments, Inc. Light-Enhanced Ozone Wafer Processing System and Method of Use
KR102577853B1 (ko) * 2021-06-22 2023-09-13 티오에스주식회사 기판 처리 장비용 고토크형 매뉴퓰레이터

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020096196A1 (en) * 2001-01-23 2002-07-25 Takayuki Toshima Substrate processing apparatus and substrate processing method
US20140065295A1 (en) * 2012-08-28 2014-03-06 Dainippon Screen Mfg. Co., Ltd Substrate treatment method and substrate treatment apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3837026B2 (ja) * 2001-01-23 2006-10-25 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法
JP2005217226A (ja) * 2004-01-30 2005-08-11 Matsushita Electric Ind Co Ltd 半導体基板の洗浄方法及び洗浄装置
JP2005277268A (ja) * 2004-03-26 2005-10-06 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
TWI343840B (en) * 2005-07-06 2011-06-21 Applied Materials Inc Apparatus for electroless deposition of metals onto semiconductor substrates
US7914626B2 (en) * 2005-11-24 2011-03-29 Tokyo Electron Limited Liquid processing method and liquid processing apparatus
JP2007173432A (ja) * 2005-12-21 2007-07-05 Seiko Epson Corp 半導体基板処理装置及び半導体装置の製造方法
JP4787089B2 (ja) 2006-06-26 2011-10-05 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP5474840B2 (ja) * 2011-01-25 2014-04-16 東京エレクトロン株式会社 液処理装置および液処理方法
US20130087309A1 (en) * 2011-10-11 2013-04-11 Applied Materials, Inc. Substrate support with temperature control

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020096196A1 (en) * 2001-01-23 2002-07-25 Takayuki Toshima Substrate processing apparatus and substrate processing method
US20140065295A1 (en) * 2012-08-28 2014-03-06 Dainippon Screen Mfg. Co., Ltd Substrate treatment method and substrate treatment apparatus

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160276379A1 (en) * 2013-03-29 2016-09-22 Shibaura Mechatronics Corporation Substrate processing apparatus and substrate processing method
US10026760B2 (en) * 2013-03-29 2018-07-17 Shibaura Mechatronics Corporation Substrate processing apparatus and substrate processing method
US20180311764A1 (en) * 2014-09-04 2018-11-01 Samsung Electronics Co., Ltd. Spot heater and device for cleaning wafer using the same
US10576582B2 (en) * 2014-09-04 2020-03-03 Samsung Electronics Co., Ltd. Spot heater and device for cleaning wafer using the same
JP2017069353A (ja) * 2015-09-29 2017-04-06 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
US10910213B2 (en) 2015-12-25 2021-02-02 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method
US11410863B2 (en) 2016-09-23 2022-08-09 SCREEN Holdings Co., Ltd. Substrate processing device including heater between substrate and spin base
US11465167B2 (en) 2017-03-24 2022-10-11 SCREEN Holdings Co., Ltd. Substrate treatment apparatus
US11456192B2 (en) * 2019-08-02 2022-09-27 Semigear, Inc. Apparatus and method for cooling substrate
JP2020127048A (ja) * 2020-05-12 2020-08-20 芝浦メカトロニクス株式会社 基板処理装置
US20230215740A1 (en) * 2021-12-30 2023-07-06 Semes Co., Ltd. Substrate treating apparatus and substrate treating method

Also Published As

Publication number Publication date
US10497581B2 (en) 2019-12-03
US20170117160A1 (en) 2017-04-27
TWI508793B (zh) 2015-11-21
WO2014061353A1 (ja) 2014-04-24
TW201420212A (zh) 2014-06-01
JP6168273B2 (ja) 2017-07-26
KR20150070354A (ko) 2015-06-24
JP2014082318A (ja) 2014-05-08
KR102132051B1 (ko) 2020-07-08

Similar Documents

Publication Publication Date Title
US10497581B2 (en) Substrate processing device
US9601357B2 (en) Substrate processing device and substrate processing method
JP5615650B2 (ja) 基板処理方法および基板処理装置
CN107104074B (zh) 基板处理装置及基板处理方法
US9728443B2 (en) Substrate processing apparatus and substrate processing method
KR102088539B1 (ko) 기판 처리 방법 및 기판 처리 장치
CN107924832B (zh) 基板处理方法及基板处理装置
TWI686897B (zh) 基板保持旋轉裝置及具備其之基板處理裝置、以及基板處理方法
US10192771B2 (en) Substrate holding/rotating device, substrate processing apparatus including the same, and substrate processing method
TW201720542A (zh) 基板保持旋轉裝置及具備其之基板處理裝置、暨基板處理方法
KR20150029563A (ko) 기판 처리 방법 및 기판 처리 장치
JP2009212301A (ja) 基板処理方法および基板処理装置
JP2017041512A (ja) 基板処理方法および基板処理装置
JP2010123884A (ja) 基板処理方法および基板処理装置
JP6028892B2 (ja) 基板処理装置
JP2013243413A (ja) 基板処理方法および基板処理装置
KR102188352B1 (ko) 기판 처리 장치
KR102001735B1 (ko) 기판 처리 방법 및 기판 처리 장치
JP5852927B2 (ja) 基板処理方法
JP2009105145A (ja) 基板処理装置
KR20250022758A (ko) 기판 처리 장치, 기판 처리 방법 및 컴퓨터 판독 가능한 기록 매체
KR20230053155A (ko) 기판 처리 장치 및 기판 처리 방법
JP2013182958A (ja) 基板処理方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: SCREEN HOLDINGS CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HASHIZUME, AKIO;OTA, TAKASHI;SIGNING DATES FROM 20150323 TO 20150324;REEL/FRAME:035404/0442

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION