US20140034282A1 - Heat radiation component and method for manufacturing heat radiation component - Google Patents

Heat radiation component and method for manufacturing heat radiation component Download PDF

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Publication number
US20140034282A1
US20140034282A1 US13/951,582 US201313951582A US2014034282A1 US 20140034282 A1 US20140034282 A1 US 20140034282A1 US 201313951582 A US201313951582 A US 201313951582A US 2014034282 A1 US2014034282 A1 US 2014034282A1
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substrate
heat radiation
radiation component
carbon nanotubes
plating layer
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Kenji Kawamura
Syuzo Aoki
Masao Nakazawa
Yoriyuki SUWA
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Assigned to SHINKO ELECTRIC INDUSTRIES CO., LTD. reassignment SHINKO ELECTRIC INDUSTRIES CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AOKI, SYUZO, KAWAMURA, KENJI, NAKAZAWA, MASAO, SUWA, YORIYUKI
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/007—Electroplating using magnetic fields, e.g. magnets
    • C25D5/009—Deposition of ferromagnetic material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/1662—Use of incorporated material in the solution or dispersion, e.g. particles, whiskers, wires
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/1664—Process features with additional means during the plating process
    • C23C18/1673—Magnetic field
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/007—Electroplating using magnetic fields, e.g. magnets
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/20—Nanotubes characterized by their properties
    • C01B2202/34—Length
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/20—Nanotubes characterized by their properties
    • C01B2202/36—Diameter
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/02—Constructions of heat-exchange apparatus characterised by the selection of particular materials of carbon, e.g. graphite
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
    • F28F3/02—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the embodiments discussed herein are related to a heat radiation component and a method for manufacturing a heat radiation component.
  • a semiconductor device used for a CPU (Central Processing Unit) or the like generates heat at a high temperature during operation. Therefore, in order to form the semiconductor device to exhibit a satisfactory performance, it is important to rapidly radiate the heat outside the semiconductor device.
  • CPU Central Processing Unit
  • a heat radiation component such as a heat spreader or a heat pipe is attached to the semiconductor device for ensuring a path to effectively radiate the heat generated by the semiconductor device.
  • studies are being conducted for improving the heat radiating (heat releasing) performance of the heat radiation component such as the heat spreader or the heat pipe.
  • a metal layer having carbon materials e.g., carbon nanotubes distributed therein is formed on a surface of the heat radiation component (e.g., heat spreader, heat pipe).
  • Some examples of a method for distributing carbon materials (e.g., carbon nanotubes) inside a metal layer are as follows.
  • the first method is to arrange carbon nanotubes substantially in a vertical direction by injecting a plating liquid including carbon nanotubes into holes that are narrower than the fiber length of the carbon nanotubes (see, for example, Japanese Laid-Open Patent Publication No. 2006-152372).
  • a second method is to form a metal plating layer by an electroplating process, so that carbon nanotubes are in a vertical direction along an electrical flux line (see, for example, Japanese Laid-Open Patent Publication No. 2001-283716).
  • a heat radiation component including a substrate including a predetermined surface, a plurality of carbon materials arranged with spaces in between, and a plating layer having a surface and including a plating material that fills the spaces between the plurality of carbon materials. At least one of the plurality of carbon materials is oriented orthogonal to the predetermined surface of the substrate. A part of each of the plurality of carbon materials protrudes from the surface of the plating layer in a direction opposite to the substrate.
  • FIG. 1 is a cross-sectional view illustrating a heat radiation component according to a first embodiment of the present invention
  • FIGS. 2A and 2B are schematic diagrams for describing processes for manufacturing a heat radiation component according to the first embodiment of the present invention
  • FIGS. 3A and 3B are schematic diagrams for describing processes for manufacturing a heat radiation component according to a second embodiment of the present invention.
  • FIG. 4 is a graph illustrating the results for confirming a heat radiating property of a heat radiation component according to an embodiment of the present invention.
  • FIG. 1 is a cross-sectional view illustrating a heat radiation component 1 according to the first embodiment of the present invention.
  • the heat radiation component 1 includes a substrate 10 and a carbon material layer 20 .
  • the substrate 10 is preferably formed of a metal material having a satisfactory thermal conductivity.
  • the metal material may be, for example, copper (Cu), aluminum (Al), iron (Fe), or an alloy including any of these metals. It is, however, to be noted that a material other than metal may be used as long as the material can provide a satisfactory thermal conductivity.
  • the carbon material layer 20 includes a plating layer 22 formed on a surface 10 a of the substrate 10 .
  • the plating layer 22 includes carbon nanotubes 21 .
  • the plating layer 22 is formed filling the spaces between the carbon nanotubes 21 .
  • the thickness T of the plating layer 22 is, for example, approximately 50 ⁇ m.
  • the carbon nanotubes 21 are arranged (oriented) orthogonal to the surface 10 a of the substrate 10 . A part of each of the carbon nanotubes 21 protrudes from a surface of the plating layer 22 in a direction opposite to the substrate 10 .
  • the term “orthogonal” does not only refer to the carbon nanotubes 21 being completely orthogonal to the surface 10 a of the substrate 10 but also to the carbon nanotubes 21 being substantially orthogonal to the surface 10 a of the substrate 10 to the extent of being able to attain the below-described effects of the heat radiation component 1 .
  • the part of each of the carbon nanotubes 21 protruding from a surface 22 a of the plating layer 22 may hereinafter also be referred to as a protruding part of the carbon nanotube 21 .
  • the amount L by which the protruding part of the carbon nanotube 21 protrudes from the surface 22 a of the plating layer 22 is, for example, approximately 5 ⁇ m to 10 ⁇ m. It is to be noted that the carbon nanotubes 21 may have different protrusion amounts L.
  • a projected area (from a plan view) of the protrusion parts of the carbon nanotubes 21 is, for example, 3% or more with respect to the area of an upper surface of the plating layer 22 .
  • the protrusion amount L is preferred to be greater than 5 ⁇ m.
  • the protrusion amount L is preferred to be less than 10 ⁇ m.
  • the diameter of the carbon nanotube 21 is, for example, approximately 100 nm to 300 nm.
  • the length of the carbon nanotube 21 is, for example, approximately 55 ⁇ m to 60 ⁇ m.
  • tens of thousands of carbon nanotubes are formed standing close together on the surface 10 a of the substrate 10 .
  • the material of the plating layer 22 is preferably a metal having satisfactory thermal conductivity and having a rust-resistant property.
  • nickel (Ni), copper (Cu), cobalt (Co), gold, (Au), silver (Ag), or palladium (Pd) may be used as the material of the plating layer 22 .
  • carbon materials such as carbon nano-fiber, graphite, or carbon black may be used instead of the carbon nanotubes 21 . Further, a combination of any of these carbon materials may be used instead of the carbon nanotubes 21 .
  • the heat radiation component 1 can be applied to, for example, a vapor chamber, a heat pipe, a heat spreader, or a casing of an LED (Light Emitting Diode). That is, by attaching the substrate 10 of the heat radiation component 1 to a heat generating element (e.g., semiconductor device), the heat generated by the heat generating element can be rapidly transmitted to a surface of the carbon material layer 20 via the substrate 10 .
  • a heat generating element e.g., semiconductor device
  • FIGS. 2A and 2B are schematic diagrams for describing processes for manufacturing the heat radiation component of the first embodiment.
  • the substrate 10 is prepared.
  • the carbon nanotubes 21 are formed standing close together on the substrate 10 , in a manner that the carbon nanotubes 21 are arranged (oriented) in an orthogonal direction with respect to the surface 10 a of the substrate 10 .
  • the substrate 10 is preferably formed of a metal material having a satisfactory thermal conductivity.
  • the metal material may be, for example, copper (Cu), aluminum (Al), iron (Fe), or an alloy including any of these metals. It is, however, to be noted that a material other than metal may be used as long as the material can provide a satisfactory thermal conductivity.
  • the carbon nanotubes 21 are formed directly on the surface 10 a of the substrate 10 by using a CVD (Chemical Vapor Deposition) method, so that the carbon nanotubes 21 are arranged in the orthogonal direction with respect to the surface 10 a of the substrate 10 . More specifically, the substrate 10 is placed in a heating furnace that is adjusted to a predetermined pressure and temperature. Then, the carbon nanotubes 21 are formed on the surface 10 a of the substrate 10 by performing a CVD process on the substrate 10 .
  • the pressure inside the heating furnace is, for example, approximately 100 Pa, and the temperature inside the heating furnace is, for example, approximately 600° C.
  • the process gas used in the CVD process may be, for example, acetylene gas.
  • the carrier gas used in the CVD process may be, for example, argon gas or hydrogen gas.
  • each of the carbon nanotubes 21 has one end contacting the surface 10 a of the substrate 10 .
  • the diameter of the carbon nanotube 21 is, for example, approximately 100 nm to 300 nm.
  • the length of the carbon nanotube 21 is, for example, approximately 55 ⁇ m to 60 ⁇ m.
  • the number of carbon nanotubes 21 is, for example, approximately tens of thousands of carbon nanotubes 21 .
  • the length of the carbon nanotube 21 (distance from the surface 10 a of the substrate 10 to a distal end of the carbon nanotube 21 ) can be controlled by adjusting the time of growth of the carbon nanotube 21 .
  • a metal catalyst layer may be formed on the surface 10 a of the substrate by using, for example, a sputtering method.
  • the carbon nanotubes 21 are formed on the metal catalyst layer by performing a CVD process on the substrate 10 .
  • iron (Fe), cobalt (Co), or nickel (Ni) may be used to form the metal catalyst layer.
  • the thickness of the metal catalyst layer is, for example, approximately a few nm.
  • the plating layer 22 is formed on the surface 10 a of the substrate 10 to obtain a carbon material layer 20 that includes the plating layer 22 having the carbon nanotubes 21 provided therein.
  • the plating layer 22 is formed by filling (supplying) a plating material in the spaces between the carbon nanotubes 21 , so that a part of each of the carbon nanotubes 21 protrudes from the surface 22 a of the plating layer 22 in a direction opposite from the substrate 10 .
  • the thickness of the plating layer 22 is, for example, approximately 50 ⁇ m.
  • the amount L by which the protruding part of the carbon nanotube 21 protrudes from the surface 22 a of the plating layer 22 is, for example, approximately 5 ⁇ m to 10 ⁇ m. It is to be noted that the carbon nanotubes 21 may have different protrusion amounts L.
  • a projected area (from a plan view) of the protrusion parts of the carbon nanotubes 21 is, for example, 3% or more with respect to the area of an upper surface of the plating layer 22 .
  • a part of each of the carbon nanotubes 21 protrudes from the surface 22 a of the plating layer 22 in a direction opposite to the substrate 10 . Accordingly, heat that is transmitted from the substrate 10 can be radiated from the protruding part of each of the carbon nanotubes 21 . Hence, the heat radiating property of the carbon material layer 20 can be improved.
  • each of the carbon nanotubes 21 is constituted by fibers that are oriented in a longitudinal direction of the carbon nanotube 21 , the orientation of the fibers can be sufficiently utilized to further improve the heat radiating property of the carbon material layer 20 .
  • the plating layer 22 is formed by using the electroplating method according to the first embodiment, the plating layer 22 may be formed by using an electroless plating method.
  • the plating layer 22 with the electroless plating method first, the above-described processes illustrated in FIG. 2A are performed. Then, an electroless plating process is performed on the substrate 10 instead of the electroplating method in the process illustrated in FIG. 2B .
  • Ni—P, Ni—B, or Cu may be used as the material of the electroless plating method. The same effects as those of the first embodiment can be attained by forming the plating layer 22 with the electroless plating method.
  • the heat radiation component 1 is manufactured by using a method different from the method used in the first embodiment.
  • like components/parts are denoted by the same reference numerals as the reference numerals of the first embodiment and are not further explained.
  • FIGS. 3A and 3B are schematic diagrams for describing processes for manufacturing the heat radiation component 1 of the second embodiment.
  • the substrate 10 is prepared.
  • the substrate 10 is placed in a magnetic field generating apparatus (not illustrated).
  • a magnetic field M is generated in a direction orthogonal to the surface 10 a of the substrate 10 .
  • an apparatus using a superconducting magnet may be used as the magnetic field generating apparatus (not illustrated).
  • the magnetic field M is, for example, approximately 5 T (teslas) to 10 T (teslas).
  • the material used for the substrate 10 may be the same as the material used for the substrate 10 of the first embodiment.
  • the carbon material layer 20 is formed having the carbon nanotubes 21 provided in the plating layer 22 .
  • the plating layer 22 is formed by filling a plating material in the spaces between the carbon nanotubes 21 , so that a part of each of the carbon nanotubes 21 protrudes from the surface 22 a of the plating layer 22 in a direction opposite to the substrate 10 .
  • a material of the carbon nanotubes 21 (hereinafter also referred to as “carbon nanotube material 21 ”) is dispersed in an electroplating liquid used for forming the plating layer 22 . Then, the electroplating liquid having the carbon nanotube material 21 dispersed therein is used to perform an electroplating process on the surface 10 a of the substrate 10 inside the magnetic field M. Thereby, the carbon material layer 20 is formed including the plating layer 22 having the carbon nanotubes 21 provided therein.
  • nickel (Ni), copper (Cu), cobalt (Co), gold (Au), silver (Ag), or palladium (Pd) may be used as the material of the plating layer 22 .
  • a material that is not affected or hardly affected by the magnetic field M is preferred to be used as the plating layer 22 . It is to be noted that the plating layer 22 is formed, so that a part of each of the carbon nanotubes 22 protrudes from the surface 22 a of the plating layer in a direction opposite to the substrate 10 .
  • a large number of carbon nanotubes 21 can be formed on the surface 10 a of the substrate 10 in a direction orthogonal to the surface 10 a of the substrate. Details such as the thickness of the plating layer 22 or the amount in which the carbon nanotubes 21 protrude from the surface 22 a are substantially the same as those described in the first embodiment. It is to be noted that, in some cases, the ends of the carbon nanotubes 21 of the second embodiment do not contact the surface 10 a of the substrate 10 .
  • the electroplating liquid used in FIG. 3B it is preferable to blend the electroplating liquid used in FIG. 3B with a polyacrylic acid to be used as a dispersing agent for dispersing the carbon nanotube material 21 . Further, it is also preferable to blend the electroplating liquid with an alkanediol compound, an alkenediol compound, or an alkynediol compound to be used as a brightening agent.
  • an alkynediol compound including alkynediol molecules having an oxyethylene side chain in which the oxyethylene side chain constitutes at least 20% by weight of the molecular weight of the alkynediol compound. It is preferable for the oxyethylene side chain to constitute 85% or less by weight of the molecular weight of the alkynediol compound.
  • the electroplating liquid with: an organic compound including a ketone group, an aldehyde group, or a carboxylic acid group; a carbon mono oxide compound with a coumarin derivative; an aryl aldehyde sulfone compound; a sulfone compound including an aryl group; an alkylene carboxy ester; an alkylene aldehyde; an acetylene derivative; a pyridinium compound; an alkane sulfonic compound; or an azo compound to be used as a surface activating agent.
  • the carbon nanotube material 21 in the electroplating liquid it is preferable to immerse the carbon nanotube material 21 in a dispersing agent beforehand, so that the dispersibility of the carbon nanotube material 21 is enhanced. Then, the carbon nanotube material 21 having enhanced dispersibility is mixed with the electroplating liquid.
  • the amount of the carbon nanotube material 21 mixed with the electroplating liquid is preferably greater than or equal to 100 ppm (more preferably, equal to or greater than 500 ppm, even more preferably, equal to or greater than 1000 ppm).
  • the upper limit of the mixture amount of the carbon nanotube material 21 is approximately 1% by weight. In a case where the mixture amount of the carbon nanotube material 21 exceeds 1% by weight, it becomes difficult to disperse the carbon nanotube material 21 .
  • the electroplating process When performing the electroplating process with the electroplating liquid having the carbon nanotube material 21 dispersed therein, it is preferable to perform the electroplating process with a current density of 5 A/dm 2 while agitating the electroplating liquid, so that the carbon nanotube material 21 can be maintained in a dispersed state during the electroplating process. In a case where the electroplating process is performed with a current density exceeding 5 A/dm 2 , the plating layer 22 tends to be formed having a rugged surface.
  • the substrate 10 Prior to performing the electroplating process, the substrate 10 is connected to a cathode of a direct current power source (not illustrated) and placed orthogonal to a liquid surface of the electroplating liquid. Further, an anode plate (not illustrated), which is connected to an anode of the direct current power source (not illustrated), is placed on a side of the surface 10 a (i.e., surface on which the electroplating process is to be performed) of the substrate 10 . Then, the electroplating process is performed while oscillating the substrate 10 and the anode plate (not illustrated) in a horizontal direction. Thereby, the carbon nanotubes 21 can be evenly arranged on the surface 10 a of the substrate 10 . In addition, a part of each of the carbon nanotubes 21 can be formed protruding from the surface 22 a of the plating layer 22 .
  • the carbon material layer 20 having the carbon nanotubes 21 provided in the plating layer 22 can also be formed by dispersing the carbon nanotube material 21 in the electroplating liquid used for forming the plating layer 22 and performing an electroplating process in the magnetic field by using the electroplating liquid.
  • the heat radiation component 1 formed by the above-described method of the second embodiment can attain the same effects as the heat radiation component 1 of the first embodiment.
  • an electroless plating method may be used instead of the electroplating method.
  • Ni—P, Ni—B, or Cu may be used as the material of the plating layer 22 .
  • the carbon nanotube material 21 is dispersed in an electroless plating liquid used for forming the plating layer 22 .
  • the carbon material layer 20 having the carbon nanotubes 21 provided in the plating layer 22 is formed by performing an electroless plating process on the surface 10 a of the substrate 10 in the magnetic field M.
  • example 1 a sample of the heat radiation component 1 manufactured with the method of the first embodiment was prepared (hereinafter also referred to as “example 1”).
  • copper (Cu) was used as the material of the substrate 10
  • nickel (Ni) was used as the material of the plating layer 22 .
  • the thickness T (see FIG. 1 ) of the plating layer 22 was approximately 50 ⁇ m
  • the protrusion amount L (see FIG. 1 ) of the protruding part of the carbon nanotubes is approximately 5 ⁇ m to 10 ⁇ m.
  • a heat radiation component X manufactured with a method similar to the second embodiment was prepared (hereinafter also referred to as “comparative example X”). It is, however, to be noted that the comparative example X was manufactured without using the magnetic field generating apparatus (not illustrated). That is, the carbon material layer 20 having the carbon nanotubes 21 provided in the plating layer 22 was manufactured by dispersing the carbon nanotube material 21 in the electroplating liquid used for forming the plating layer 22 and performing an electroplating process by using the electroplating liquid in a state where no magnetic field M is generated.
  • the carbon nanotubes 21 of the comparative example X were arranged in random directions with respect to the surface 10 a of the substrate 10 .
  • the main difference between the carbon nanotubes 21 of the example 1 and the comparative example X is that the carbon nanotubes 21 of the example 1 were arranged (oriented) orthogonal to the surface 10 a of the substrate 10 whereas the carbon nanotubes 21 of the comparative example X were arranged in random directions with respect to the surface 10 a of the substrate 10 .
  • each of the samples were attached to a predetermined block together with a heater and a thermometer.
  • the heat radiation component 1 (example 1) and the heat radiation component X (example X) were alternately mounted on the block.
  • the temperature for each of the samples was measured in a state where a constant voltage was applied to the heater for 30 minutes.
  • the result of the measurement is illustrated in FIG. 4 .
  • a sample having a small amount of temperature rise during 30 minutes signifies that the sample has a satisfactory heat radiating property.
  • the temperature of the heat radiation component X (comparative example X) after the elapse of 30 minutes was approximately 68.3° C.
  • the temperature of the heat radiation component 1 (example 1) after the elapse of 30 minutes was approximately 66.9° C.
  • the heat radiating property of the heat radiation component 1 (example 1) is improved 1.4° C. in comparison with the heat radiating property of the heat radiation component X (comparative example X).
  • the carbon nanotubes 21 of the heat radiation component X were arranged in random directions with respect to the surface 10 a of the substrate 10 . Therefore, some of the distal ends of the carbon nanotubes 21 of the heat radiation component X were bent or abutting the surface 2 a of the plating layer 22 . Thus, some of the carbon nanotubes 21 of the heat radiation component X were unable to contribute to heat radiation. As a result, it is evaluated that heat cannot be sufficiently radiated from the carbon nanotubes 21 of the heat radiation component X.
  • the carbon nanotubes 21 of the heat radiation component 1 were arranged orthogonal to the surface 10 a of the substrate 10 . Therefore, hardly any of the distal ends of the carbon nanotubes 21 of the heat radiation component 1 were bent or abutting the surface 2 a of the plating layer 22 . Thus, almost all of the carbon nanotubes 21 included in the plating layer 22 of the heat radiation component 1 were able to contribute to heat radiation. As a result, it is evaluated that heat can be sufficiently radiated from the carbon nanotubes 21 of the heat radiation component 1 .
  • the heat radiation component 1 (example 1) having carbon nanotubes 21 arranged orthogonal to the surface 10 a of the substrate 10 is confirmed to have an improved heat radiating property compared to the heat radiation component X (comparative example X) having carbon nanotubes 21 arranged in random directions with respect to the surface 10 a of the substrate 10 .
  • a method for manufacturing a heat radiation component comprising:
  • a method for manufacturing a heat radiation component comprising:

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US20190387587A1 (en) * 2015-11-23 2019-12-19 Daniel Paul Hashim Dielectric heating of three-dimensional carbon nanostructured porous foams as a heat exchanger for volumetric heating of flowing fluids
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