US20130320228A1 - Contamination reduction electrode for particle detector - Google Patents

Contamination reduction electrode for particle detector Download PDF

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Publication number
US20130320228A1
US20130320228A1 US13/543,568 US201213543568A US2013320228A1 US 20130320228 A1 US20130320228 A1 US 20130320228A1 US 201213543568 A US201213543568 A US 201213543568A US 2013320228 A1 US2013320228 A1 US 2013320228A1
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US
United States
Prior art keywords
collector electrode
charged particle
detection element
detector arrangement
particle detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/543,568
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English (en)
Inventor
Stefan Lanio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
Original Assignee
ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
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Filing date
Publication date
Application filed by ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH filed Critical ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
Assigned to ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FUR HALBLEITERPRUFTECHNIK GMBH reassignment ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FUR HALBLEITERPRUFTECHNIK GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LANIO, STEFAN
Publication of US20130320228A1 publication Critical patent/US20130320228A1/en
Priority to US14/204,278 priority Critical patent/US8963084B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2449—Detector devices with moving charges in electric or magnetic fields

Definitions

  • Embodiments of the present invention relate to means for reduction of contamination of particle detectors.
  • they relate to a charged particle detector arrangement with a contamination reduction electrode.
  • embodiments relate to a charged particle detector arrangement, a charged particle beam device, comprising a charged particle detector arrangement, and a method of operating a charged particle detector arrangement.
  • Charged particle beam apparatuses have many functions in a plurality of industrial fields, including, but not limited to, inspection of semiconductor devices during manufacturing, exposure systems for lithography, detecting devices and testing systems. Thus, there is a high demand for structuring and inspecting specimens within the micrometer and nanometer scale.
  • Micrometer and nanometer scale process control, inspection or structuring is often done with charged particle beams, e.g. electron beams, which are generated and focused in charged particle beam devices, such as electron microscopes or electron beam pattern generators.
  • charged particle beams offer superior spatial resolution compared to, e.g. photon beams, due to their short wavelengths.
  • the requirements of fast scanning are in particular important in applications of the manufacturing of semiconductors, where high throughput is essential. Such applications include electron beam inspection, defect review and critical dimension measurements.
  • Charged particle beam systems such as a scanning electron microscope (SEM) can include detectors, such as scintillation detectors (e.g. P47 powders, YAG or YAP crystals or the like) or semiconductor detectors such as pin diodes, to detect charged particles, e.g. electrons and ions. They are usually arranged inside a vacuum environment. The vacuum contains residual contaminants like hydrocarbons outgassing from pumps or plastic components inside the vacuum chamber. These hydrocarbons adsorb on the surface of the detector leading to contamination of the detector.
  • detectors such as scintillation detectors (e.g. P47 powders, YAG or YAP crystals or the like) or semiconductor detectors such as pin diodes, to detect charged particles, e.g. electrons and ions. They are usually arranged inside a vacuum environment. The vacuum contains residual contaminants like hydrocarbons outgassing from pumps or plastic components inside the vacuum chamber. These hydrocarbons adsorb on the surface of the detector leading to contamination of the detector.
  • a charged particle detector arrangement includes a detection element and a collector electrode configured to collect charged particles released from the detection element upon impact of signal charged particles.
  • a charged particle beam device including a charged particle detector arrangement.
  • the detector arrangement includes a detection element and a collector electrode configured to collect charged particles released from the detection element upon impact of signal charged particles.
  • a method of operating a charged particle detector arrangement includes: providing a charged particle detector arrangement, comprising a detection element and a collector electrode arranged to collect charged particles released from the detection element upon impact of signal charged particles; applying a biasing potential to the collector electrode, wherein the potential is positive with respect to the detection element.
  • Embodiments are also directed to apparatuses for carrying out the disclosed methods and including apparatus parts for performing each described method step. These method steps may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments are also directed to methods by which the described apparatus operates. It includes method steps for carrying out every function of the apparatus or manufacturing every part of the apparatus.
  • FIG. 1 shows a schematic view of a charged particle detector arrangement according to an embodiment described herein;
  • FIG. 2 shows a schematic view of a charged particle detector arrangement according to another embodiment described herein;
  • FIG. 3 shows a schematic side view of a charged particle beam device having a charged particle detector arrangement according to embodiments described herein;
  • FIG. 4 shows a schematic side view of a charged particle beam device according embodiments described herein;
  • FIG. 5 shows a block diagram of a method for operating a charged particle detector arrangement according to embodiments described herein.
  • the charged particle beam device or components thereof will exemplarily be referred to as a charged particle beam device including the detection of secondary electrons.
  • the present invention can still be applied for apparatuses and components detecting corpuscles such as secondary and/or backscattered charged particles in the form of electrons or ions, photons, X-rays or other signals in order to obtain a specimen image.
  • reference to secondary particles can be understood as reference to any secondary and/or backscattered particles described herein.
  • a “specimen” as referred to herein includes, but is not limited to, semiconductor wafers, semiconductor workpieces, and other workpieces such as memory disks and the like. Embodiments of the invention may be applied to any workpiece on which material is deposited or which are structured.
  • a specimen includes a surface to be structured or on which layers are deposited, an edge, and typically a bevel.
  • a charged particle detector arrangement includes a detection element and a collector electrode configured to collect charged particles released from the detection element upon impact of signal charged particles.
  • FIG. 1 shows a schematic view of a charged particle detector arrangement 10 according to an embodiment.
  • a detection element 20 is arranged on a carrier.
  • a collector electrode 30 is positioned in the vicinity of the detection element 20 .
  • the collector electrode 30 is electrically biased positively with respect to the detection element 20 .
  • the charged particles to be detected impinge from the left (shown by an arrow B) along an optical axis.
  • Secondary charged particles B are the signal particles scattered from a specimen to be inspected upon impact of primary charged particles originating from a charged particle source.
  • the secondary particles B impinging on the detector are not the main contributors to the cracking of the molecules, since their energy is rather high (over 5 keV) which leads to a low carbonization rate.
  • the main contribution to carbonization stems from the tertiary particles C which are created upon impact of the secondary signal particles B. They only have a low energy of a few eV, but the stopping power of the adsorbed hydrocarbons for low energy electrons is very high, and, consequently, the carbonization rate is high.
  • the purpose of the collector electrode 30 which is an element with the highest potential in the vicinity of the detection element 20 , is to provide a pull on the charged particles released on the detection element 20 .
  • the particles contaminate the collector electrode 30 , which can be a very inexpensive and easy-to-replace sheet metal part, instead of the valuable detection element 20 .
  • the collector electrode 30 is a plate having an opening for passing secondary charged particles.
  • the collector electrode 30 can be a ring arranged coaxially with an optical axis of the detector arrangement.
  • the charged particle detector arrangement 10 further includes a voltage supply (not shown) electrically connected to the collector electrode 30 for biasing the collector electrode 30 to collect charged particles, particularly wherein the voltage supply is further connected to the detection element 20 .
  • the detection arrangement 10 can comprise a housing 40 which is electrically grounded.
  • the voltage supply is further connected to the detection element 20 .
  • the biasing potential with respect to the detection element is typically in the range of a few hundred Volts. Its optimum value depends on the geometry of the collector electrode 30 , the geometry of the surrounding components and their electric potentials and is best determined experimentally. It should be high enough to collect many charged particles, but not unnecessarily high in order to minimize the influence on the secondary charged particles beam, i.e. the signal particles. Simulations show that at 300 Volts collector electrode potential only 3% of the tertiary electrons return to the detection element and 96% of the same reach the collector electrode, whereas 100% of the tertiary electrons return to the detection element when the collector electrode is unbiased.
  • the collector electrode 30 is positively biased with respect to the detection element 20 .
  • the collector electrode 30 can be biased with a voltage in the range of 30-500 Volts.
  • the collector electrode 30 is arranged to a side of the detection element 20 .
  • related effects such as beam deflection, astigmatism etc. can be tolerated.
  • the collector electrode 30 comprises two or more collection plates.
  • the plates can be round, square or of any other shape.
  • the signal charged particles can be directed along an optical axis perpendicular to the detection element 20 .
  • the collecting action is symmetrical and the influence on the secondary particles beam is limited to a very small focusing effect.
  • the charged particles can be electrons, ions or other particles.
  • the collector electrode 30 is shaped as a ring arranged coaxially with the optical axis of the detector arrangement in the drift space in front of the detection element.
  • FIG. 2 shows a schematic view of a charged particle detector arrangement 10 according to another embodiment.
  • a detection element 20 is arranged on a carrier.
  • a collector electrode 30 is arranged in a plane of the detection element 20 , surrounding the detection element 20 .
  • the collector electrode or the detection element can also have an arbitrary tilt angle with respect to the optical axis of the incoming particles.
  • a charged particle beam device including a charged particle detector arrangement.
  • the detector arrangement includes a detection element and a collector electrode configured to collect charged particles released from the detection element upon impact of signal charged particles.
  • FIG. 3 shows a schematic side view of a charged particle beam device having a charged particle detector arrangement according to embodiments described herein;
  • the beam device includes a column, including an emitter 105 and an objective lens 10 .
  • a primary electron beam 130 from the emitter 105 is directed at a specimen 125 .
  • Secondary electrons 140 are emitted/scattered from the specimen 125 , are then separated from an optical axis by an angle of several degrees and are further deflected towards a detector arrangement 220 by means of a sector 440 acting as a beam bending or a deflection angle increasing unit.
  • the secondary electrons are detected by detection elements 20 of the detector arrangement 220 to produce a secondary electron signal.
  • the detector arrangement 220 includes detection elements 20 and a collector electrode 30 .
  • collector electrodes 30 can be biased at a potential close to that of the detection elements 20 .
  • the potential can be slightly positive, for example a few hundred volts over the potential of the detection elements 20 , in order to attract tertiary electrons released at the detection elements 20 . Due to the collector electrodes 30 , contamination of the detection elements 20 due to tertiary electrons as well as arcing between an aperture plate 201 and the detection elements 20 can be reduced.
  • a secondary particle optics 200 is provided.
  • the particle optics 200 includes at least an aperture plate 201 having two or more aperture openings.
  • the aperture plate 201 can be biased to a deceleration potential.
  • the deceleration of the aperture plate 201 in combination with an acceleration of the detection elements 20 are configured for a separation and focusing of the secondary particles, e.g. the secondary electron beam.
  • the separation of the secondary beam on different detection elements can be provided.
  • the aperture plate 201 has a central aperture opening 202 and at least two radially outer aperture openings 204 .
  • four outer aperture openings 204 can be provided. Thereby, a topgrahpic contrast can be provided.
  • the charged particle beam device includes voltage supplies 992 , 994 , and 996 .
  • Voltage supply 992 is connected to the aperture plate 201 for biasing thereof and thereby providing a deceleration field.
  • the deceleration field can correspond to a decrease of particle energy of about 20 keV to 30 keV.
  • Voltage supply 994 is connected to detection elements 20 in order to accelerate the secondary particles towards the detection elements 20 . Thereby, also a focusing is provided.
  • the acceleration field can correspond to an increase of particle energy of about 20 keV to 30 keV.
  • Voltage supply 996 can bias the collector electrodes 30 to a potential, which is slightly more positive as compared to that of the detection elements 20 to attract tertiary electrons released at the detection elements 20 .
  • the voltage difference between the detection elements 20 and the collector electrodes 30 can be e.g. 100 V to 300 V.
  • particle optics 200 can include a focus lens 301 and/or one or more deflection assemblies 901 / 903 .
  • the particle optics 200 can further include one or more deflection assemblies.
  • the deflection assemblies 901 and 903 can be controlled for aligning the signal beam, e.g. the SE bundle to the aperture plate.
  • the deflections assemblies can be controlled for de-scanning the signal beam. That is a deflection (de-scan, anti-scan or counter-scan) is provided for compensating a movement of the signal beam which results from scanning of the primary beam, which generates the signal beam on impingement on a specimen.
  • a set of at least 4 deflection plates can be provide that can be connected to deflection voltages.
  • the deflection voltages can be synchronized with the image scan of the primary beam and amplified and/or rotated such that deflection of the signal beam generated by primary beam scanning cancels the motion of the signal beam in the sensor plane.
  • the first deflection assembly 901 can de-scan the signal beam and align the signal beam to the focus lens 301 .
  • the deflection of the first deflection assembly 901 can introduce a beam tilt with respect to the optical axis of the signal beam. This beam tilt can be compensated for by the second deflection assembly 903 .
  • the second deflection assembly can further improve alignment on the aperture plate 201 .
  • a secondary electron beam 140 passes through an opening 410 in an objective lens 100 and an opening in a plate 520 to enter a sector 440 .
  • Sector 440 has a negatively-charged U-bend 535 and a positively-charged U-bend 525 serving to bend the secondary-electron beam 405 .
  • a pair of sector side plates is provided.
  • Secondary electron beam 405 is then aligned as it passes through an SE alignment quadrupole element 445 and focused as it passes through an SE focusing lens 301 .
  • Secondary electron beam 405 then passes through openings in grounded plate 455 and in SE optics 200 to the detector arrangement 220 .
  • FIG. 4 is a schematic illustration of a wafer inspection system 900 in accordance with an embodiment of the invention, employing an electron-optical subsystem.
  • An electron beam column 902 includes an e-beam source 904 , magnetic beam separator 906 and objective lens 908 for applying a primary beam 910 to a wafer 912 carried on an x-y stage 915 .
  • Secondary electrons from wafer 912 pass through beam separator 906 , sector 914 , and focusing and deflecting elements 200 to detector 220 .
  • the signals from detector 220 are supplied to imaging electronics 920 .
  • Wafer 912 and stage 915 are contained in a vacuum chamber 922 supported on an isolation frame 924 .
  • Vacuum pumps 926 maintain a suitable vacuum in the chamber 922 and column 902 during operation.
  • Wafer 912 is placed in and removed from chamber 922 by a wafer handler subsystem 928 .
  • Wafer inspection system 900 is controlled by a computer system 930 having a control processor, image processor and image memory, for example.
  • Computer system 930 is in communication with a workstation 932 having input/output devices 934 such as a keyboard and a pointing device or other suitable devices permitting human interaction, and a display 936 .
  • Control processor 930 communicates via a bus 938 with control circuits such as PE-beam control 940 which regulates the primary-electron beam 910 , SE optics control 942 which controls the focusing and deflection elements of column 902 to provide a suitable secondary-electron beam on detector 220 , PE alignment and deflection control 944 which controls the application of primary beam 910 on wafer 912 , vacuum pumps control 946 for controlling vacuum pumps 926 , wafer voltage control 948 , stage control 950 , and handler control 952 . Control processor 930 also receives imaging data via bus 938 from imaging electronics 920 for storage, processing and image analysis.
  • control circuits such as PE-beam control 940 which regulates the primary-electron beam 910 , SE optics control 942 which controls the focusing and deflection elements of column 902 to provide a suitable secondary-electron beam on detector 220 , PE alignment and deflection control 944 which controls the application of primary beam 910 on wafer 912 , vacuum pumps
  • FIG. 5 shows a block diagram of a method for operating a charged particle detector arrangement according to embodiments described herein.
  • the beam is guided to a charged particle detector arrangement as disclosed in the embodiments herein.
  • a biasing potential is provided by a power supply to the collector electrode.
  • a method of operating a charged particle detector arrangement includes: providing a charged particle detector arrangement, comprising a detection element and a collector electrode arranged to collect charged particles released from the detection element upon impact of signal charged particles; applying a biasing potential to the collector electrode, wherein the potential is positive with respect to the detection element.
  • the method can further comprise replacing the collector electrode with a new one.
  • embodiments as described herein provide an arrangement which is capable of a more effective and accurate alignment as compared to common SEM tools. Thereby, the complexity of the alignment system is not increased and it might be possible that a more compact charged particle beam column can be provided.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
US13/543,568 2012-06-05 2012-07-06 Contamination reduction electrode for particle detector Abandoned US20130320228A1 (en)

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EP12175165.5A EP2682978B1 (en) 2012-07-05 2012-07-05 Contamination reduction electrode for particle detector

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US9953805B2 (en) 2015-07-02 2018-04-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH System for imaging a secondary charged particle beam with adaptive secondary charged particle optics
US10236156B2 (en) 2015-03-25 2019-03-19 Hermes Microvision Inc. Apparatus of plural charged-particle beams

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US20140291510A1 (en) * 2013-03-25 2014-10-02 Hermes-Microvision, Inc. Charged Particle Beam Apparatus
US20150083912A1 (en) * 2013-03-25 2015-03-26 Hermes Microvision Inc. Charged Particle Beam Apparatus
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US10236156B2 (en) 2015-03-25 2019-03-19 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US11217423B2 (en) 2015-03-25 2022-01-04 Asml Netherlands B.V. Apparatus of plural charged-particle beams
US9953805B2 (en) 2015-07-02 2018-04-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH System for imaging a secondary charged particle beam with adaptive secondary charged particle optics
US10103004B2 (en) * 2015-07-02 2018-10-16 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH System and method for imaging a secondary charged particle beam with adaptive secondary charged particle optics

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Publication number Publication date
TW201411681A (zh) 2014-03-16
EP2682978A1 (en) 2014-01-08
TWI523063B (zh) 2016-02-21
US20140191127A1 (en) 2014-07-10
US8963084B2 (en) 2015-02-24
EP2682978B1 (en) 2016-10-19

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