US20120237857A1 - Photomask and method for forming overlay mark using the same - Google Patents

Photomask and method for forming overlay mark using the same Download PDF

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Publication number
US20120237857A1
US20120237857A1 US13/049,047 US201113049047A US2012237857A1 US 20120237857 A1 US20120237857 A1 US 20120237857A1 US 201113049047 A US201113049047 A US 201113049047A US 2012237857 A1 US2012237857 A1 US 2012237857A1
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United States
Prior art keywords
areas
photomask
patterns
mark
photoresist layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/049,047
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English (en)
Inventor
Chui Fu CHIU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanya Technology Corp
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Nanya Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanya Technology Corp filed Critical Nanya Technology Corp
Priority to US13/049,047 priority Critical patent/US20120237857A1/en
Assigned to NANYA TECHNOLOGY CORPORATION reassignment NANYA TECHNOLOGY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHIU, CHUI FU
Priority to TW100114821A priority patent/TWI434135B/zh
Priority to CN201110164983.9A priority patent/CN102681330B/zh
Publication of US20120237857A1 publication Critical patent/US20120237857A1/en
Priority to US13/776,122 priority patent/US8535858B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Definitions

  • the present invention generally relates to a photomask and an overlay mark, and more particularly, to a photomask having ring areas and a method for forming an overlay mark in a substrate using the same during double patterning.
  • the IC manufacturing process involves more than two photomasks of different patterns to perform a double patterning. Therefore, the alignment between the photomasks determines the quality of patterns transferred to the target layer and the final performance of the IC.
  • FIG. 1A shows a top view of a pattern of a conventional photomask.
  • the pattern 1 has a first rectangular region 11 , a second rectangular region 12 , a third rectangular region 13 and a fourth rectangular region 14 .
  • the longer side of the first rectangular region 11 and the longer side of the third rectangular region 13 are parallel to each other, while the longer side of the second rectangular region 12 and the longer side of the fourth rectangular region 14 are parallel to each other.
  • the longer side of the first rectangular region 11 or the third rectangular region 13 is perpendicular to the longer side of the second rectangular region 12 or the fourth rectangular region 14 . Therefore, along the horizontal and vertical directions, there are two parallel and symmetrical rectangular regions.
  • FIG. 1B shows a top view of an overlay mark in a substrate.
  • the overlay mark 2 is formed on the substrate after the previous process is completed.
  • the overlay mark 2 includes a first aligned rectangular region 21 , a second aligned rectangular region 22 , a third aligned rectangular region 23 and a fourth aligned rectangular region 24 .
  • FIG. 1C shows a top view of an alignment configuration.
  • the pattern 1 in FIG. 1A is transferred on a photoresist layer on the substrate to form a mark pattern 1 a .
  • the mark pattern 1 a has a first rectangular region 11 a , a second rectangular region 12 a , a third rectangular region 13 a and a fourth rectangular region 14 a .
  • a metrology process is performed to determine the alignment precision by referring to the overlay mark 2 and the mark pattern 1 a on the photoresist layer.
  • the alignment step is performed. If the measured gap meets the predetermined criterion, the patternization is successful and process continues. However, if the criterion is not met, the failed photoresist layer at this stage must be removed and the lithography process is repeated again until the criterion is met.
  • FIGS. 2A to 2G show a conventional method for forming an overlay mark in a substrate.
  • the overlay mark 2 is constituted by a plurality of hollow cylinders 36 ( FIG. 2G ), which are formed as described below.
  • a photoresist layer 31 is applied on a substrate 30 .
  • a photomask 32 is provided.
  • the photomask 32 comprises a plurality of patterns, and the patterns comprise a plurality of square areas 33 .
  • Each of the square areas 33 has the same light transmittancy, and the light transmittancy of the square areas 33 is different from that of the other area of the photomask 32 .
  • the square areas 33 are light transmissive, and the other area of the photomask 32 is opaque.
  • FIGS. 2C and 2D wherein FIG. 2C is a top view of FIG. 2D , an exposure and development process is performed so that the photoresist layer 31 has a plurality of mark patterns.
  • the mark pattern comprises a plurality of holes 34 .
  • FIG. 2E a plurality of spacers 35 are formed on the sidewalls of the holes 34 .
  • the photoresist layer 31 is removed, and the spacers 35 remain on the substrate 30 .
  • the substrate 30 is etched to form an overlay mark 2 corresponding to the spacers 35 .
  • the overlay mark 2 includes a plurality of hollow cylinders 36 .
  • the material of the spacers 35 is metal oxide, therefore, in the etching process, the spacers 35 can serve as a mask.
  • FIG. 2H shows a cross-sectional view of a conventional overlaying structure on the substrate of FIG. 2G .
  • a priming step is performed to apply an adhesive layer 37 on the substrate 30 .
  • a second photoresist layer 38 is applied on the adhesive layer 37 to adhere to the substrate 30 .
  • an exposure and development process is performed, so that the second photoresist layer 38 has a plurality of second mark patterns 39 which are the same as the mark pattern 1 a in FIG. 1C .
  • the second mark patterns 39 are located over the overlay mark 2 . Therefore, a metrology process is performed to determine the alignment precision by referring to the second mark patterns 39 and the overlay mark 2 . As shown in FIG. 2H , the measured distance d 1 provided by the second mark patterns 39 and the overlay mark 2 can be used to perform the alignment procedure.
  • the drawback of the overlaying structure of FIG. 2H is as follows.
  • the spacers 35 and the hollow cylinders 36 have the same thickness T 1 , which is very thin. Therefore, when the metrology process is performed, the contrast is low, and it is very difficult to find the overlay mark 2 .
  • the present invention is directed to a photomask, which comprises a plurality of patterns. At least one of the patterns comprises a plurality of ring areas and a plurality of inner areas enclosed by the ring areas, wherein the light transmittancy of the ring areas is different from that of the inner areas.
  • the present invention is also directed to a method for forming an overlay mark in a substrate, comprising the steps of: applying a photoresist layer on a substrate; providing a photomask, the photomask comprising a plurality of patterns, at least one of the patterns comprising a plurality of ring areas and a plurality of inner areas enclosed by the ring areas, wherein the light transmittancy of the ring areas is different from that of the inner areas; performing an exposure and development process, so that the photoresist layer has a plurality of mark patterns, at least one of the mark patterns comprises a plurality of holes and a plurality of pillars within the holes, and a gap is between the sidewall of each hole and the sidewall of the pillar; forming a plurality of spacers on the sidewalls of the holes and the sidewalls of the pillars, wherein the bottoms of the spacers in the gaps join together to form a plurality of thick spacers; removing the photoresist layer, wherein the thick space
  • the present invention is also directed to a method for insuring an alignment precision in a double patterning process, comprising the steps of: applying a first photoresist layer on a substrate; providing a photomask, the photomask comprising a plurality of patterns, at least one of the patterns comprising a plurality of ring areas and a plurality of inner areas enclosed by the ring areas, wherein the light transmittancy of the ring areas is different from that of the inner areas; performing an exposure and development process, so that the first photoresist layer has a plurality of first mark patterns, at least one of the first mark patterns comprises a plurality of holes and a plurality of pillars within the holes, and a gap is between the sidewall of each hole and the sidewall of the pillar; forming a plurality of spacers on the sidewalls of the holes and the sidewalls of the pillars, wherein the bottoms of the spacers in the gaps join together to form a plurality of thick spacers; removing the first photore
  • the thickness of the overlay mark is large, the contrast is high when the metrology process is performed, and it is easy to find the overlay mark.
  • FIG. 1A is a top view of a pattern of a conventional photomask
  • FIG. 1B is a top view of an overlay mark in a substrate
  • FIG. 1C is a top view of an alignment configuration
  • FIGS. 2A to 2G show a conventional method for forming an overlay mark in a substrate
  • FIG. 2H is a cross-sectional view of a conventional overlaying structure on the substrate of FIG. 2G ;
  • FIGS. 3A to 3G show a method for forming an overlay mark in a substrate according to an embodiment of the present invention
  • FIG. 3H is a cross-sectional view of an overlaying structure on the substrate of FIG. 3G ;
  • FIG. 4 is a top view of an alignment configuration according to an embodiment of the present invention.
  • FIGS. 3A to 3G show a method for forming an overlay mark in a substrate according to an embodiment of the present invention.
  • the overlay mark 6 comprises a plurality of hollow cylinders 46 ( FIG. 3G ), which are formed as described below.
  • a first photoresist layer 41 is applied on a substrate 40 (for example, a wafer).
  • a photomask 42 is provided.
  • the photomask 42 comprises a first rectangular region, a second rectangular region adjacent to the first rectangular region, a third rectangular region diagonal relative to the first rectangular region and adjacent to the second rectangular region, and a fourth rectangular region diagonal relative to the second rectangular region and adjacent to both the first rectangular region and the third rectangular region.
  • the first rectangular region is parallel to the third rectangular region, while the second rectangular region is perpendicular to the first rectangular region and parallel to the fourth rectangular region.
  • the photomask 42 comprises a plurality of patterns that include a first pattern in the first rectangular region, a second pattern in the second rectangular region, a third pattern in the third rectangular region and a fourth pattern in the fourth rectangular region. At least one of the first pattern, the second pattern, the third pattern and the fourth pattern comprises a plurality of ring areas 43 and a plurality of inner areas 431 enclosed by the ring areas 43 .
  • the light transmittancy of the ring areas 43 is different from that of the inner areas 431 .
  • the light transmittancy of the inner areas 431 is same as that of the other area of the photomask 42 .
  • the ring areas 43 are light transmissive, and the inner areas 431 and the other area of the photomask 42 are opaque.
  • the periphery of the ring area 43 is square, and the inner area 431 is also square.
  • At least one of the other patterns may is comprise a plurality of parallel strip areas, wherein each of the strip areas has the same light transmittancy.
  • FIG. 3C is a top view of FIG. 3D
  • an exposure and development process is performed so that the first photoresist layer 41 has a plurality of first mark patterns.
  • the first mark pattern comprises a plurality of holes 44 and a plurality of pillars 441 within the holes 44 , and a gap 442 is between the sidewall of each hole 44 and the sidewall of the pillar 441 .
  • the width of the gap 442 is defined as G, where
  • T 1 is the thickness of the spacers 35 and the hollow cylinders 36 ( FIG. 2H ).
  • the patterns of the photomask 42 comprise a plurality of parallel strip areas
  • the first mark patterns of the first photoresist layer 41 comprise a plurality of trenches.
  • a plurality of spacers are formed on the sidewalls of the holes 44 and the sidewalls of the pillars 441 .
  • the bottoms of the spacers in the gaps 441 join together to form a plurality of thick spacers 45 , and each of the thick spacers 45 has a notch at the top thereof.
  • the thickness of the bottom of the thick spacer 45 is equal to the width G of the gap 442 .
  • the thick spacer 45 may fill the gap 442 , and the thick spacer 45 has a uniform thickness which is equal to the width G of the gap 442 .
  • the first photoresist layer 41 is removed, and the thick spacers 45 remain on the substrate 40 .
  • the substrate 40 is etched to form an overlay mark 6 corresponding to the thick spacers 45 .
  • the overlay mark 6 includes a plurality of hollow cylinders 46 .
  • the material of the thick spacers 45 is metal oxide, therefore, in the etching process, the thick spacers 45 can serve as a mask.
  • FIG. 3H shows a cross-sectional view of an overlaying structure on the substrate of FIG. 3G .
  • a priming step is performed to apply an adhesive layer 47 on the substrate 40 .
  • the material of the adhesive layer 47 is Hexamethyldisilazane (HMDS).
  • HMDS Hexamethyldisilazane
  • a second photoresist layer 48 is applied on the adhesive layer 47 to adhere to the substrate 40 .
  • an exposure and development process is performed, so that the second photoresist layer 48 has a plurality of second mark patterns 49 .
  • the second mark patterns 49 are located over the overlay mark 6 . Therefore, a metrology process is performed to determine the alignment precision by referring to the second mark patterns 49 and the overlay mark 6 . As shown in FIG. 3H , the measured distance d 2 provided by the second mark patterns 49 and the overlay mark 6 can be used to perform the alignment procedure.
  • FIG. 4 shows a top view of an alignment configuration according to an embodiment of the present invention.
  • the overlay mark 6 includes a first aligned rectangular region 61 , a second aligned rectangular region 62 , a third aligned rectangular region 63 and a fourth aligned rectangular region 64 . Since the overlay mark 6 is formed according to the photomask 42 , the overlay mark 6 corresponds to the patterns of the photomask 42 .
  • the mark pattern 5 a of the second photoresist layer 48 has a first rectangular region 51 a , a second rectangular region 52 a , a third rectangular region 53 a and a fourth rectangular region 54 a .
  • the mark pattern 5 a is the same as the second mark patterns 49 in FIG. 3H .
  • the second mark patterns 49 comprise a plurality of trenches.
  • the second mark patterns 49 of the second photoresist layer may comprise a plurality of holes 34 and spacers 35 ( FIG. 2E ) or a plurality of holes 44 , pillars 441 and thick spacers 45 ( FIG. 3E ).
  • the alignment step is performed. If the measured distance d 2 meets the predetermined criterion, the patternization is successful and the process continues. However, if the criterion is not met, the failed photoresist layer at this stage must be removed and the lithography process is repeated again until the criterion is met.
  • the thickness T 2 of the hollow cylinders 46 is the same as the width G of the gap 442 , therefore,
  • the thickness of the hollow cylinders 46 is large, the contrast is high when the metrology process is performed, and it is easy to find the overlay mark 6 .

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
US13/049,047 2011-03-16 2011-03-16 Photomask and method for forming overlay mark using the same Abandoned US20120237857A1 (en)

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Application Number Priority Date Filing Date Title
US13/049,047 US20120237857A1 (en) 2011-03-16 2011-03-16 Photomask and method for forming overlay mark using the same
TW100114821A TWI434135B (zh) 2011-03-16 2011-04-28 光罩及利用該光罩形成疊對標記之方法
CN201110164983.9A CN102681330B (zh) 2011-03-16 2011-06-20 光掩模、利用该光掩模形成叠对标记的方法及二次图案化工艺的对位精度提高方法
US13/776,122 US8535858B2 (en) 2011-03-16 2013-02-25 Photomask and method for forming overlay mark using the same

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160322307A1 (en) * 2015-04-28 2016-11-03 Kabushiki Kaisha Toshiba Method of forming mark pattern, recording medium and method of generating mark data
US20180188646A1 (en) * 2015-09-24 2018-07-05 Korea Research Institute Of Standards And Science Method for manufacturing transparent substrate and method for manufacturing surface enhanced raman scattering substrate using the same
US10249570B2 (en) * 2012-06-28 2019-04-02 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay mark
CN109870876A (zh) * 2017-12-05 2019-06-11 长鑫存储技术有限公司 一种对准图案制作方法

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US8745546B2 (en) * 2011-12-29 2014-06-03 Nanya Technology Corporation Mask overlay method, mask, and semiconductor device using the same
CN105182697B (zh) * 2015-08-28 2017-05-10 京东方科技集团股份有限公司 一种On Cell结构触摸显示屏及其制作方法、显示装置
CN110109325A (zh) * 2018-02-01 2019-08-09 李冰 一种拼接光波导结构及其制备方法

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JPH0367734A (ja) * 1989-08-04 1991-03-22 Kimoto & Co Ltd コピー車
JP4011642B2 (ja) 1995-12-15 2007-11-21 株式会社日立製作所 電子線描画方法及び装置
KR19980030438A (ko) * 1996-10-29 1998-07-25 김영환 반도체 버어니어 구조 및 그것을 이용한 오버레이 정확도 측정방법
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10249570B2 (en) * 2012-06-28 2019-04-02 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay mark
US10424543B2 (en) 2012-06-28 2019-09-24 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay mark
US11037882B2 (en) 2012-06-28 2021-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay mark
US11876054B2 (en) 2012-06-28 2024-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay mark and method of making
US20160322307A1 (en) * 2015-04-28 2016-11-03 Kabushiki Kaisha Toshiba Method of forming mark pattern, recording medium and method of generating mark data
US9741564B2 (en) * 2015-04-28 2017-08-22 Toshiba Memory Corporation Method of forming mark pattern, recording medium and method of generating mark data
US20180188646A1 (en) * 2015-09-24 2018-07-05 Korea Research Institute Of Standards And Science Method for manufacturing transparent substrate and method for manufacturing surface enhanced raman scattering substrate using the same
US10222695B2 (en) * 2015-09-24 2019-03-05 Korea Research Institute Of Standards And Science Method for manufacturing transparent substrate and method for manufacturing surface enhanced Raman scattering substrate using the same
CN109870876A (zh) * 2017-12-05 2019-06-11 长鑫存储技术有限公司 一种对准图案制作方法

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Publication number Publication date
CN102681330A (zh) 2012-09-19
US20130164689A1 (en) 2013-06-27
TWI434135B (zh) 2014-04-11
US8535858B2 (en) 2013-09-17
CN102681330B (zh) 2013-09-25
TW201239515A (en) 2012-10-01

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Owner name: NANYA TECHNOLOGY CORPORATION, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CHIU, CHUI FU;REEL/FRAME:025968/0411

Effective date: 20110311

STCB Information on status: application discontinuation

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