US20120111402A1 - Solar cell and solar cell production method - Google Patents

Solar cell and solar cell production method Download PDF

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Publication number
US20120111402A1
US20120111402A1 US13/289,151 US201113289151A US2012111402A1 US 20120111402 A1 US20120111402 A1 US 20120111402A1 US 201113289151 A US201113289151 A US 201113289151A US 2012111402 A1 US2012111402 A1 US 2012111402A1
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United States
Prior art keywords
layer
solar cell
rear side
section
layer section
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Abandoned
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US13/289,151
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English (en)
Inventor
Matthias Hofmann
Andrey STEKOLNIKOV
Robert Seguin
Maximilian Scherff
Andreas Mohr
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Q Cells SE
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Q Cells SE
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Assigned to Q-CELLS SE reassignment Q-CELLS SE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HOFMANN, MATTHIAS, MOHR, ANDREAS, SCHERFF, MAXIMILLIAN, SEGUIN, ROBERT, Stekolnikov, Andrey
Publication of US20120111402A1 publication Critical patent/US20120111402A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a solar cell and a solar cell production method.
  • dielectric passivation layers are expected to be arranged on the rear side surface of their semiconductor substrate in order to minimize charge carrier combinations at the semiconductor surface and thereby to increase the efficiency of the solar cell.
  • a series of materials for passivation layers are known. From the standpoint of the cell, aluminium oxide, in particular, has the greatest potential, since negative charges form at the interface between the semiconductor and the aluminium oxide, which charges bring about a so-called field effect passivation by virtue of the resultant field effect on p-type material.
  • a metal layer has to be produced onto the passivation layer of the dielectric passivation.
  • the metal layer is produced by means of metal pastes that are applied to the semiconductor substrate and subsequently subjected to a thermal treatment. This thermal treatment step is generally known as a firing step.
  • the metal paste adheres well to the underlying passivation layer.
  • the reaction that causes the adhesion must not be too aggressive, in order not to damage the passivation.
  • the adhesion properties of the metal layer and the reaction rate during the firing step are set by means of suitable selection of the proportion of glass frits in the metal paste.
  • the reaction rate and reaction depth are also essentially dependent on the type and composition of the material of the passivation layer. In this case, the process window between the case where the metal paste is not aggressive enough, that is to say does not adhere at all, and the case where it is too aggressive, that is to say destroys the passivation, is very narrow.
  • the reaction sequence is influenced by inhomogeneities in the dielectric, for example by pinholes, inclusions (blisters), fractures (cracks) or the like, or by transitions between amorphous and crystalline regions.
  • the invention is based on the consideration of separating from one another the effect of the passivation and the adhesion effect of a metallization arranged thereon, in order to avoid the compromise constraint described above.
  • a covering layer is applied to the rear side passivation layer on the rear side, which firstly protects the rear side passivation layer and secondly optimizes the adhesion or the contact between metallization and the semiconductor substrate.
  • the inventors have discovered that the stability of a layer material with respect to a metal paste during a firing step is dependent on material properties that are directly related to the refractive index.
  • the layers having a lower refractive index are more stable with respect to the metal paste, while those having a higher refractive index form a more intimate bond or connection with the metal layer arising therefrom and thus enable better adhesion of the metal layer on the semiconductor substrate.
  • the protective layer section of the covering layer, said section facing the rear side passivation layer can be produced in such a way that it has a low refractive index and thus protects the rear side passivation layer.
  • the contact layer section of the covering layer, facing the metallization layer has a higher refractive index and therefore serves for better adhesion of the metallization layer.
  • a covering layer comprising a protective layer section having a lower refractive index and a contact layer section having a comparatively higher refractive index is applied.
  • the metallization layer is applied, preferably by means of the application of a metal paste, for example an aluminium-containing paste, and a subsequent firing step.
  • the metallization layer can be produced by means of a deposition method such as, for example, by means of physical deposition from the gas phase (physical vapour deposition—PVD) or by means of some other suitable method.
  • the metallization layer is contact-connected to the semiconductor substrate preferably by means of laser-induced contacts (so-called laser fired contacts—LFC), for example distributed in a grid-type fashion of the semiconductor substrate.
  • the covering layer arranged between the rear side passivation layer and the metallization layer thus has a protective layer section facing the rear side passivation layer and a contact layer section facing the metallization layer.
  • the contact layer section can be obtained partly or completely on the entire rear side surface of the semiconductor substrate. In specific embodiments, however, this contact layer section of the covering layer will combine with the metallization layer or merge in the metal layer in such a way that it is transformed (converted) in terms of its composition partly or (with regard to its thickness) completely.
  • the covering layer in the finished solar cell will have the contact layer section at least in surface regions, namely for example in the surface regions in which the metallization layer does not cover the covering layer or in which the contact layer section is made thick enough that the reaction between it and the metallization layer does not penetrate completely through the thickness of the contact layer section.
  • This can involve, for example, edge regions of the rear side surface of the semiconductor substrate, for example in the form of a frame around the rear side surface, and/or island regions within the rear side surface of the semiconductor substrate.
  • the covering layer is formed from two or more partial layers, wherein the protective layer section and the contact layer section each are one of the partial layers.
  • a protective layer is applied as a protective layer section of the covering layer and a contact layer is arranged thereon as a contact layer section of the covering layer.
  • Further intermediate layers can also be formed between the two sections.
  • the embodiment in which the covering layer is formed from partial layers differs from the graded refractive index profile in accordance with the following embodiment in that the covering layer has a rather stepped refractive index profile.
  • the covering layer has a graded refractive index profile that rises from the protective layer section to the contact layer section.
  • the refractive index profile can rise linearly or non-linearly.
  • the protective layer section and the contact layer section each have a refractive index of between approximately 1.5 and 4.5 in the spectral range that is the operating range of the solar cell.
  • the protective layer section has a refractive index of approximately 1.9
  • the contact layer section has a refractive index of approximately 2.05.
  • the refractive index values mentioned here apply to the operating range of the solar cell and can preferably be measured in the optical and/or infrared range of the electromagnetic spectrum, in particular at a wavelength of approximately 630 nanometres.
  • the protective layer section has a refractive index of between approximately 1.7 and 2.4 or 1.8 and 2.1 or 1.85 and 1.95 and the contact layer section has a refractive index of between approximately 1.5 and 4.5 or 1.8 and 2.8 or 3.5 and 4.5.
  • the exact refractive index values can be chosen independently of one another for the protective layer section and the contact layer section, as long as the contact layer section has a higher refractive index than the protective layer section.
  • the protective layer section and the contact layer section are formed from a material compound and the difference in refractive index between the protective layer section and the contact layer section is based on different stoichiometric compositions of the materials in the material compound.
  • This can be achieved during solar cell production by the quantitative ratio of the starting materials being varied during the deposition of the covering layer.
  • PECVD plasma-enhanced vapour deposition method
  • it is possible to vary the gas flows of the starting materials when employing a plasma-enhanced vapour deposition method (PECVD—Plasma-enhanced chemical vapour deposition) during the deposition of the covering layer in a stepwise manner (in the case of a plurality of partial layers) or in a graded manner (in the case of a graded refractive index profile).
  • PECVD plasma-enhanced vapour deposition method
  • the difference in refractive index between the protective layer section and the contact layer section is based on different hydrogen contents in the two sections.
  • the hydrogen content in the two sections of the covering layer is different.
  • the protective layer section and the contact layer section are preferably formed from the same material and preferably even with the same stoichiometric composition.
  • both the stoichiometric composition and the hydrogen content in the two sections can be set in such a way that the desired refractive indices or the desired refractive index profile form(s).
  • the covering layer is formed from amorphous or microcrystalline silicon, from silicon nitride and/or from silicon oxynitride.
  • the refractive index in the case of these materials, it is possible to change in the silicon nitride the ratio between silicon and nitrogen and/or in the silicon oxynitride the ratio between silicon nitride and oxygen in the respective material compounds.
  • oxygen however, other suitable materials can also be incorporated into the silicon nitride in order to control the refractive index, for example carbon.
  • the metallization layer is produced by means of metal paste application and a subsequent firing step, metal pastes containing glass fits are generally used. During the firing step, said glass frits react with the layer lying below the metal paste and produce a so-called eutectic layer (for example an Al—Si eutectic when an Al paste is used). Said eutectic layer usually serves both as a passivation layer and as an adhesion layer for the adhesion of the metallization layer to the solar cell.
  • eutectic layer for example an Al—Si eutectic when an Al paste is used.
  • the contact layer section of the covering layer contains silicon
  • metal pastes containing no glass fits can be used for the rear side metallization.
  • the metal paste then reacts with the silicon of the contact layer section, such that a eutectic layer is formed here, too.
  • the silicon is partly or completely converted.
  • the protective layer section of the covering layer contains silicon nitride and the contact layer section of the covering layer contains amorphous or microcrystalline silicon.
  • the rear side passivation layer is formed from aluminium oxide.
  • An aluminium oxide layer of this type for example in the stoichiometric ratio Al203, is preferably applied by means of atomic layer deposition (ALD), PECVD or PVD.
  • the rear side passivation layer composed of aluminium oxide preferably has a layer thickness of less than 100 nanometres, preferably a layer thickness of approximately 30 nanometres, particularly preferably 10 nanometres.
  • the rear side passivation layer is formed directly on the semiconductor substrate, the covering layer is formed directly on the rear side passivation layer and/or the metallization layer is formed directly on the covering layer.
  • the direct arrangement means that no further intermediate layer is arranged between the relevant layers.
  • a thin oxide layer may arise on the semiconductor substrate as an intermediate layer between the semiconductor substrate and the rear side passivation layer.
  • the covering layer substantially covers the entire rear side surface of the semiconductor substrate.
  • it substantially means that, in a process-dictated fashion, regions of the semiconductor substrate, in particular edge regions, can be present which are not covered by the covering layer.
  • the covering layer covers at least 90%, preferably at least 95% or 99%, of the rear side surface of the semiconductor substrate.
  • the features presented in accordance with the embodiment in this paragraph concerning the covering layer are correspondingly also applicable to the protective layer section and the contact layer section, although, as explained above, the contact layer section in specific embodiments can be present merely in surface regions.
  • Said surface regions can comprise, for example, at least approximately 0.5%, 3% or 10% of the rear side surface of the semiconductor substrate.
  • the surface regions in which the contact layer section is no longer present or is only partly present in its original layer thickness are e.g. the regions in which the metallization layer “eats up” the contact layer during firing.
  • the complete covering layer is still present even after firing. If the paste is printed very near to the cell edge, this proportion of area becomes very small.
  • a contact-connection on both sides is provided. That means that the solar cell has a metallization both on the light incidence side (front side) and on the light-remote rear side.
  • the metallization is preferably realized by means of strip-shaped contact electrodes or by means of a contact grid.
  • the rear side passivation layer and the covering layer together form a reflection layer system for the spectral range that is the operating range of the solar cell.
  • the optical properties of the rear side passivation layer and of the covering layer are coordinated with one another in such a way that they reflect light penetrating through the semiconductor substrate.
  • the spectral operating range of the solar cell as mentioned here is preferably in the visible and/or infrared range.
  • the single FIGURE shows a solar cell contact-connected on both sides, comprising a rear side passivation layer and a covering layer arranged thereon.
  • the FIGURE illustrates a solar cell comprising a semiconductor substrate 1 .
  • an emitter layer 13 is formed in the semiconductor substrate 1 by means of doping. If, by way of example, the semiconductor substrate 1 initially comprises an n-type semiconductor, a p-type emitter 13 can be formed by means of doping.
  • the emitter layer 13 is contact-connected by means of front side electrodes 5 arranged thereon.
  • a rear side passivation layer 2 is arranged on a rear side surface 11 of the semiconductor substrate 1 . It serves for passivating the rear side surface 11 .
  • a covering layer 3 is arranged on the rear side passivation layer 2 , which covering layer simultaneously protects the rear side passivation layer 2 and improves the adhesion of a metallization layer 4 arranged thereon.
  • the covering layer 3 has a protective layer section 31 facing the rear side passivation layer 2 and a contact layer section 32 facing the metallization layer 4 .
  • the protective layer section 31 has a lower refractive index, for example of approximately 1.9.
  • the contact layer section 32 has a higher refractive index, for example of approximately 2.05 or 3.5.
  • the protective layer section 31 and the contact layer section 32 in each form a separate partial layer of the covering layer 3 , between which, if appropriate, further intermediate layers (not illustrated in the FIGURE) having refractive index values between those of the two sections 31 , 32 can be arranged.
  • the protective layer section 31 and the contact layer section 32 can be sections of a covering layer 3 having a graded refractive index profile. In this case, the graded refractive index profile can rise linearly or in some other suitable manner from the protective layer section 31 towards the contact layer section 32 .

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
US13/289,151 2010-11-04 2011-11-04 Solar cell and solar cell production method Abandoned US20120111402A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010060339A DE102010060339A1 (de) 2010-11-04 2010-11-04 Solarzelle und Solarzellenherstellungsverfahren
DE102010060339.2 2010-11-04

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US20120111402A1 true US20120111402A1 (en) 2012-05-10

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US13/289,151 Abandoned US20120111402A1 (en) 2010-11-04 2011-11-04 Solar cell and solar cell production method

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US (1) US20120111402A1 (fr)
EP (1) EP2453483A3 (fr)
JP (1) JP2012099822A (fr)
CN (1) CN102456752A (fr)
DE (1) DE102010060339A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103050573A (zh) * 2012-12-07 2013-04-17 常州大学 一种背钝化电池的制备方法
US20140041720A1 (en) * 2012-08-13 2014-02-13 Lg Electronics Inc. Solar cell
CN110676347A (zh) * 2019-09-27 2020-01-10 江苏顺风新能源科技有限公司 提高黑组件良率的perc电池生产控制方法
US11049982B2 (en) 2016-02-26 2021-06-29 Kyocera Corporation Solar cell element

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104393059A (zh) * 2014-11-21 2015-03-04 广西智通节能环保科技有限公司 一种太阳能电池
CN104409571A (zh) * 2014-11-21 2015-03-11 广西智通节能环保科技有限公司 一种选择性发射极太阳能电池的制作方法
CN104409570A (zh) * 2014-11-21 2015-03-11 广西智通节能环保科技有限公司 一种晶体硅太阳能电池的制作方法
CN107731960A (zh) * 2017-10-16 2018-02-23 常州亿晶光电科技有限公司 Perc电池背面氮化硅多层膜的制备方法

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US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
US20100206371A1 (en) * 2007-05-14 2010-08-19 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Reflectively coated semiconductor component, method for production and use thereof

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Publication number Priority date Publication date Assignee Title
WO2007055484A1 (fr) * 2005-11-08 2007-05-18 Lg Chem, Ltd. Cellule solaire à haute efficacité et son procédé de préparation
TWI320974B (en) * 2006-09-27 2010-02-21 Sino American Silicon Prod Inc Solar cell and method of fabircating the same
EP2122007A4 (fr) * 2007-02-27 2011-10-26 Sixtron Advanced Materials Inc Procédé de formation d'un film sur un substrat
EP2195853B1 (fr) * 2008-04-17 2015-12-16 LG Electronics Inc. Cellule solaire et son procédé de fabrication

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
US20100206371A1 (en) * 2007-05-14 2010-08-19 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Reflectively coated semiconductor component, method for production and use thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140041720A1 (en) * 2012-08-13 2014-02-13 Lg Electronics Inc. Solar cell
US9349884B2 (en) * 2012-08-13 2016-05-24 Lg Electronics Inc. Solar cell
CN103050573A (zh) * 2012-12-07 2013-04-17 常州大学 一种背钝化电池的制备方法
US11049982B2 (en) 2016-02-26 2021-06-29 Kyocera Corporation Solar cell element
CN110676347A (zh) * 2019-09-27 2020-01-10 江苏顺风新能源科技有限公司 提高黑组件良率的perc电池生产控制方法

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CN102456752A (zh) 2012-05-16
DE102010060339A1 (de) 2012-05-10
JP2012099822A (ja) 2012-05-24
EP2453483A3 (fr) 2014-03-12
EP2453483A2 (fr) 2012-05-16

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Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HOFMANN, MATTHIAS;STEKOLNIKOV, ANDREY;SEGUIN, ROBERT;AND OTHERS;REEL/FRAME:027183/0902

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