US20120103265A1 - Vapor phase growth apparatus - Google Patents

Vapor phase growth apparatus Download PDF

Info

Publication number
US20120103265A1
US20120103265A1 US13/379,077 US201013379077A US2012103265A1 US 20120103265 A1 US20120103265 A1 US 20120103265A1 US 201013379077 A US201013379077 A US 201013379077A US 2012103265 A1 US2012103265 A1 US 2012103265A1
Authority
US
United States
Prior art keywords
susceptor
members
height adjusting
internal gear
meshed state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/379,077
Other languages
English (en)
Inventor
Akira Yamaguchi
Kosuke Uchiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TNCSE Ltd
Taiyo Nippon Sanso Corp
Original Assignee
Taiyo Nippon Sanso Corp
TN EMC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Nippon Sanso Corp, TN EMC Ltd filed Critical Taiyo Nippon Sanso Corp
Assigned to TAIYO NIPPON SANSO CORPORATION, TN EMC LTD. reassignment TAIYO NIPPON SANSO CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: UCHIYAMA, KOSUKE, YAMAGUCHI, AKIRA
Publication of US20120103265A1 publication Critical patent/US20120103265A1/en
Assigned to TNCSE LTD. reassignment TNCSE LTD. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: TN EMC LTD.
Abandoned legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the present invention relates to a vapor phase growth apparatus, and in particular, to a rotation/revolution type vapor phase apparatus that performs vapor-phase growth of a semiconductor thin film on a surface of a substrate while rotating/revolving the substrate.
  • a rotation/revolution type vapor phase growth apparatus in which a plurality of rotation susceptors are arranged in a circumferential direction of an outer periphery of a revolution susceptor, and an external gear is provided at outer peripheries of the rotation susceptors to mesh a fixed internal gear provided in a chamber with the external gear, thereby rotating/revolving the substrates during film deposition (for example, see Patent Literature 1).
  • a vapor phase growth apparatus having a rotation/revolution mechanism including a disk-shaped susceptor provided rotatably in a chamber, a plurality of external gear members provided rotatably in a circumferential direction of an outer periphery of the susceptor, and a ring-shaped fixed internal gear member having an internal gear to mesh with the external gear members
  • at least one of the susceptor and the internal gear member is formed movably in a rotational axis line direction to a position of a meshed state where the external gear members and the internal gear member mesh with each other and to a position of a non-meshed state where both kinds of the gear members are apart from each other in the rotational axis line direction, and, on a tooth side surface of at least one kind of both kinds of the gear members, there is provided a guide slope that abuts against a tooth side surface of the other kind of both kinds thereof to guide both kinds of the gear members into the meshed state
  • a pair of upper and lower susceptor height adjusting members is opposingly provided between an upper surface of a shaft member supporting and rotating the susceptor and a lower surface of a center portion of the susceptor, and, on an opposing surface of each of the susceptor height adjusting members, there is formed, in a circumferential direction, a projection surface that projects toward the opposing susceptor height adjusting member, the susceptor height adjusting members being formed such that, when the projection surfaces are abutted against each other, the susceptor height adjusting members support the susceptor at a higher position than a
  • a vapor phase growth apparatus having a rotation/revolution mechanism including a disk-shaped susceptor provided rotatably in a chamber, a plurality of external gear members provided rotatably in a circumferential direction of an outer periphery of the susceptor, and a ring-shaped fixed internal gear member having an internal gear to mesh with the external gear members, at least one of the susceptor and the internal gear member is formed movably in a rotational axis line direction to a position of a meshed state where the external gear members and the internal gear member mesh with each other and to a position of a non-meshed state where both kinds of the gear members are apart from each other in the rotational axis line direction; on a tooth side surface of at least one kind of both kinds of the gear members, there is provided a guide slope that abuts against the tooth side surface of the other kind of the gear member(s) to guide both kinds of the gear members into the meshed state when
  • the guide slope can guide both kinds of the gear members into the meshed state.
  • both kinds of the gear members are surely guided into the meshed state only by slightly turning in either direction the external gear members provided in a freely rotatable state with respect to the susceptor. Therefore, it is also possible to automate the detachment of the susceptor by eliminating manual meshing work.
  • the susceptor upon the attachment of the susceptor, the susceptor is supported at a higher position than the position of the susceptor during film deposition by means of the susceptor height adjusting members.
  • the external gear members do not largely incline even when the external gear members and the internal gear member are brought into the non-meshed state.
  • the shaft member rotates the susceptor in the state of being supported at a higher position than during film deposition, whereby the external gear members and the internal gear member are brought from the non-meshed state into the meshed state.
  • the external gear members and the internal gear member can be brought into a predetermined meshed state and also the position of the susceptor in the chamber can be set to a predetermined height.
  • occurrence of a defect in the gears can be more surely prevented, as well as a transition from the non-meshed state to the meshed state in the external gear members and the internal gear member can be more surely achieved.
  • FIG. 1 is a cross-sectional front view showing a first embodiment example of a vapor phase growth apparatus according to the present invention.
  • FIG. 2 is a cross-sectional front view of a main part showing a situation in which a susceptor and an external gear member have been moved relatively with respect to each other in a rotational axis line direction.
  • FIG. 3 is a plan view showing one shape example as a guide slope provided on a tooth side surface of a gear member.
  • FIG. 4 is a front view showing a portion of a tooth of the same gear member.
  • FIG. 5 is a cross-sectional view taken along line V-V of FIG. 3 .
  • FIG. 6 is a plan view showing another shape example as a guide slope provided on a tooth side surface of a gear member.
  • FIG. 7 is a front view showing a portion of a tooth of the same gear member.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII of FIG. 6 .
  • FIG. 9 is a cross-sectional front view showing a second embodiment example of the vapor phase growth apparatus according to the present invention.
  • FIG. 10 is a cross-sectional front view showing a susceptor height adjusting member.
  • FIG. 11 is a plan view of the susceptor height adjusting member provided on an upper surface of a shaft member.
  • FIG. 12 is a bottom surface view of a susceptor height adjusting member provided on a lower surface of a center portion of a susceptor.
  • FIG. 13 is an illustrative view showing a situation in which the susceptor is supported by the susceptor height adjusting members at a higher position than a position of the susceptor during film deposition.
  • FIG. 14 is an illustrative view showing a situation in which the susceptor is supported by the susceptor height adjusting members in the position thereof during film deposition.
  • a vapor phase growth apparatus shown in FIGS. 1 to 8 shows a first embodiment example of the present invention.
  • the vapor phase growth apparatus includes a disk-shaped susceptor 12 provided rotatably in a chamber 11 , a ring-shaped bearing member 13 provided in each of a plurality of a circular openings 12 a formed in a circumferential direction of an outer periphery of the susceptor 12 , an external gear member (a rotation susceptor) 14 each mounted rotatably via a plurality of rolling members (balls) 13 a on each bearing member 13 , a ring-shaped fixed internal gear member 15 to mesh with the external gear member 14 , a heating unit (heater) 17 for heating a substrate 16 retained on a surface of the external gear member 14 from a back surface side of the susceptor 12 , and a flow channel 18 for guiding a raw material gas in a direction parallel to the surface of the substrate 16 .
  • a shaft member 19 for rotating the susceptor 12
  • a gas introducing portion 20 for introducing the raw material gas into the flow channel 18
  • On an outer periphery of the flow channel 18 is provided a plurality of gas discharging portions 21 .
  • a lower surface of the bearing member 13 and a lower surface of the external gear member 14 are formed to be flush with a lower surface of the susceptor 12
  • an outer peripheral upper surface of the external gear member 14 and an upper surface of the substrate 16 are formed to be flush with an upper surface of the susceptor 12 .
  • Either one or both of the susceptor 12 and the fixed internal gear member 15 are provided movably in a rotational axis line direction (an up-and-down direction).
  • the bearing member 13 and the external gear member 14 together with the susceptor 12 , are moved to a position apart above the fixed internal gear member 15 , and an external gear 14 a of the external gear member 14 and an internal gear 15 a of the fixed internal gear member 15 are moved from a meshed state position shown in FIG. 1 to a non-meshed state position shown in FIG. 2 .
  • Guide slopes 31 shown in FIG. 3 to FIG. 5 are obtained by forming one side surface of a tooth 33 of a gear member 32 into a mountainous shape having inclined planes.
  • the guide slopes 31 are provided on the tooth side surfaces of both gears are brought into a state of being abutted against each other if tooth positions of both gear members are displaced when moving from the non-meshed state position shown in FIG. 2 to the meshed state position shown in FIG. 1 .
  • the fixed internal gear member 15 is fixed to the chamber 11 and the external gear member 14 is provided in a freely rotatable state on the susceptor 12 by the bearing member 13 .
  • the external gear 14 a of the external gear member 14 is guided by the guide slopes 31 , whereby the external gear member 14 is slightly turned, resulting that teeth of the external gear 14 a enter between teeth of the internal gear 15 a to bring the external gear 14 a and the internal gear 15 a into a predetermined meshed state.
  • a guide slope 41 shown in FIG. 6 to FIG. 8 is obtained by forming an entire part of one side surface of a tooth 43 of a gear member 42 into an inclined plane.
  • the guide slope 41 for inclining in the same direction upon abutment of both gears.
  • the guide slope(s) can automatically and surely bring the teeth of the external gear 14 a and the teeth of the internal gear 15 a into a predetermined meshed state even if the teeth of the external gear 14 a and the teeth of the internal gear 15 a are displaced toward each other and brought into the non-meshed state.
  • both gears 14 a and 15 a can more smoothly mesh with each other.
  • the susceptor 12 may be rotated approximately two to three times at a slower rotation speed than a rotation speed during film deposition or may be rotated only in one direction.
  • the shapes and combinations of respective constituent members can be appropriately determined according to the dimensions of the vapor phase growth apparatus, the number of substrates processed one time, the dimensions of the substrate, the kind of the raw material gas, and the like.
  • An open and close mechanism of the chamber and a carrying mechanism of the susceptor are arbitrary.
  • the guide slope(s) may be provided only on the tooth side surface of either one of the gears, or the guide slope(s) may be curved surface(s).
  • a vapor phase growth apparatus shown in FIG. 9 to FIG. 14 shows a second embodiment example of the present invention.
  • the same reference numerals will be given to the same constituent elements as those of the vapor phase growth apparatus shown in the first embodiment example above and detailed explanation thereof will be omitted.
  • the vapor phase growth apparatus shown in the present embodiment example has basically the same structure as that of the vapor phase growth apparatus shown in the above first embodiment example.
  • the disk-shaped susceptor 12 provided rotatably in the chamber 11 is supported by the shaft member 19 via a pair of upper and lower susceptor height adjusting members 51 and 61 made of quartz, which are provided respectively on an upper surface of the shaft member 19 and the lower surface of the center portion of the susceptor 12 .
  • stepped concave and convex portions 54 are formed at an interval of 120 degrees, in which, in a circumferential direction of an upper-surface outer periphery of the member 51 , three projection portions 52 upwardly projecting toward the opposing upper susceptor height adjusting member 61 and three concave portions 53 formed between the respective projection portions 52 are each alternately formed to be grouped into three sets.
  • a ring-shaped projection portion 55 upwardly projecting toward the upper susceptor height adjusting member 61
  • screw holes 57 are formed on an inner peripheral side of the ring-shaped projection portion 55 through which eight screws 56 are inserted to mount the lower susceptor height adjusting member 51 to the upper surface of the shaft member 19 .
  • the screw holes 57 are formed at an equal interval at eight points in the circumferential direction.
  • the lower susceptor height adjusting member 51 is made of quartz and the shaft member 19 is made of carbon.
  • a circular opening 62 having an inner diameter corresponding to an outer diameter of the ring-shaped projection portion 55 is formed at the center portion, and, on an outer peripheral upper surface of the circular opening 62 , is provided projectingly upwardly a ring-shaped fitting projection portion 63 having an outer diameter corresponding to an inner diameter of a fitting concave portion 12 b formed on the lower surface of the center portion of the susceptor 12 .
  • a stepped concave and convex portion 64 On a backside of the ring-shaped fitting projection portion 63 , is formed a stepped concave and convex portion 64 corresponding to the projection portion 52 and the concave portion 53 of the lower susceptor height adjusting member 51 .
  • a ring-shaped projection portion 65 On an outer periphery of the stepped concave and convex portion 64 , is provided projectingly downwardly a ring-shaped projection portion 65 having an inner diameter corresponding to an outer diameter of the lower susceptor height adjusting member 51 .
  • a flange 66 On an outer periphery of the ring-shaped projection portion 65 , is provided a flange 66 for mounting the upper susceptor height adjusting portion 61 to the lower surface of the center portion of the susceptor 12 .
  • the upper susceptor height adjusting portion 61 is made of quartz and the susceptor 12 is made of SiC-coated carbon. Thus, to bond together the members made of the different materials, the upper susceptor height adjusting member 61 is provided with the flange 66 , and for example, the members are mechanically bonded together by a screw hole and a screw that are not shown in the drawing.
  • the stepped concave and convex portion 64 of the upper susceptor height adjusting member 61 includes a concave portion 67 formed at a predetermined interval in a circumferential direction, a stepped projection portion 68 having a first projection portion 68 a and a second projection portion 68 b projecting in a two-stepped shape downwardly toward the lower susceptor height adjusting member 51 , and a rotation stopper convex portion 69 projecting more downwardly than the projection portion 68 , and three sets of the portions 67 , 68 , and 69 are provided at an interval of 120 degrees in the circumferential direction of the member 61 .
  • the concave portion 67 of the upper susceptor height adjusting member 61 has a size capable of housing the projection portion 52 of the lower susceptor height adjusting member 51
  • the concave portion 53 of the lower susceptor height adjusting member 51 has a size capable of housing the projection portion 68 and the whirl-stop convex portion 69 of the upper susceptor height adjusting member 61 .
  • Projection heights of the first projection portion 68 a and the second projection portion 68 b of the projection portion 68 are appropriately determined according to the thicknesses of the external gear member 14 and the fixed internal gear member 15 and the presence or absence of the guide slope(s). Additionally, regarding the respective projection portions 52 , 68 a , and 68 b and the whirl-stop convex portion 69 , when the shaft member 19 is rotated in a forward direction (a rotation direction during film deposition) in a state in which the susceptor 12 is mounted on the upper surface of the shaft member 19 via the susceptor height adjusting members 51 and 61 , rising portions (stepped portions) of the respective projection portions 52 , 68 a , and 68 b and the whirl-stop convex portion 69 are abutted against each other to serve to transmit the rotation of the shaft member 19 to the susceptor 12 .
  • a leading end face of the projection portion 52 of the lower susceptor height adjusting member 51 and a leading end face of the projection portion 68 of the upper susceptor height adjusting member 61 that is, in the present embodiment example, a leading end face of either one of the first projection portion 68 a and the second projection portion 68 b are brought into a state of being abutted against each other.
  • the susceptor 12 is brought into a state of being supported with respect to the shaft member 19 at a higher position than a height of the susceptor 12 during film deposition.
  • the external gear member (rotation susceptor) 14 positioned on the outer periphery of the susceptor 12 is situated at a higher position than the fixed internal gear member 15 , whereby a lower portion of the external gear member 14 and an upper portion of the fixed internal gear member 15 can be brought into a state of slightly meshing with each other, for example into a 1 to 2 mm-meshed state.
  • the external gear member 14 and the internal gear member 15 are in the non-meshed state and the external gear 14 a of the external gear member 14 is in a state of being driven onto the internal gear 15 a of the internal gear member 15 , the external gear member 14 does not largely incline, so that no defect occurs in the gears.
  • the teeth of the external gear 14 a that was in the state of being driven onto the internal gear 15 a fall between the teeth of the internal gear 15 a , so that the external gear member 14 and the internal gear member 15 can mesh with each other.
  • the shaft member 19 When the shaft member 19 is rotated in a reverse direction after the external gear member 14 and the internal gear member 15 are brought into the meshed state, the shaft member 19 rotates in the reverse direction in a state in which the susceptor 12 hardly rotates, since the susceptor height adjusting members 51 and 61 are not provided with any projection portion serving as a whirl stop to the reverse direction and any whirl-stop convex portion.
  • the susceptor height adjusting members 51 and 61 are not provided with any projection portion serving as a whirl stop to the reverse direction and any whirl-stop convex portion.
  • the projection portion 52 of the lower susceptor height adjusting member 51 is housed into the concave portion 67 of the upper susceptor height adjusting member 61 , as well as the projection portion 68 and the whirl-stop convex portion 69 of the upper susceptor height adjusting member 61 are housed into the concave portion 53 of the lower susceptor height adjusting member 51 .
  • the susceptor 12 is brought into the state of being supported at a position corresponding to the height thereof during film deposition.
  • the external gear member 14 descends with respect to the fixed internal gear member 15 , the external gear member 14 and the fixed internal gear member 15 are brought into a predetermined meshed state for film deposition.
  • the projection portion to be provided may be an only one-stepped portion, or the whirl-stop convex portion may be provided on either one of the upper and lower susceptor height adjusting members.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
US13/379,077 2009-06-19 2010-06-11 Vapor phase growth apparatus Abandoned US20120103265A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-146740 2009-06-19
JP2009146740 2009-06-19
PCT/JP2010/059906 WO2010147053A1 (ja) 2009-06-19 2010-06-11 気相成長装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/059906 A-371-Of-International WO2010147053A1 (ja) 2009-06-19 2010-06-11 気相成長装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/988,351 Division US9765427B2 (en) 2009-06-19 2016-01-05 Vapor phase growth apparatus

Publications (1)

Publication Number Publication Date
US20120103265A1 true US20120103265A1 (en) 2012-05-03

Family

ID=43356371

Family Applications (2)

Application Number Title Priority Date Filing Date
US13/379,077 Abandoned US20120103265A1 (en) 2009-06-19 2010-06-11 Vapor phase growth apparatus
US14/988,351 Active US9765427B2 (en) 2009-06-19 2016-01-05 Vapor phase growth apparatus

Family Applications After (1)

Application Number Title Priority Date Filing Date
US14/988,351 Active US9765427B2 (en) 2009-06-19 2016-01-05 Vapor phase growth apparatus

Country Status (6)

Country Link
US (2) US20120103265A1 (zh)
JP (1) JP5613159B2 (zh)
KR (1) KR101650839B1 (zh)
CN (1) CN102804339B (zh)
TW (1) TWI527089B (zh)
WO (1) WO2010147053A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150079764A1 (en) * 2013-09-13 2015-03-19 Kabushiki Kaisha Toshiba Vapor phase growth apparatus and vapor phase growth method
WO2020084164A1 (de) * 2018-10-26 2020-04-30 Oerlikon Surface Solutions Ag, Pfäffikon Werkstückträgereinrichtung und beschichtungsanordnung

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012162752A (ja) * 2011-02-03 2012-08-30 Taiyo Nippon Sanso Corp 気相成長装置
US9816184B2 (en) 2012-03-20 2017-11-14 Veeco Instruments Inc. Keyed wafer carrier
CN103834926A (zh) * 2012-11-22 2014-06-04 上海法德机械设备有限公司 真空镀膜工件转台
JP6293135B2 (ja) * 2013-06-06 2018-03-14 イビデン株式会社 ウエハキャリアおよびこれを用いたエピタキシャル成長装置
JP6411231B2 (ja) * 2015-01-26 2018-10-24 大陽日酸株式会社 気相成長装置
DE202018100363U1 (de) 2018-01-23 2019-04-24 Aixtron Se Vorrichtung zum Verbinden eines Suszeptors mit einer Antriebswelle

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068441A (en) * 1997-11-21 2000-05-30 Asm America, Inc. Substrate transfer system for semiconductor processing equipment
US20020083899A1 (en) * 2000-12-07 2002-07-04 E.E. Technologies Inc. Film-forming device with a substrate rotating mechanism
US20030029384A1 (en) * 2001-08-09 2003-02-13 Moore Epitaxial, Inc. Rotating susceptor and method of processing substrates
US20060124062A1 (en) * 2004-10-12 2006-06-15 Hitachi Cable, Ltd. Vapor phase growth apparatus
JP2007243060A (ja) * 2006-03-10 2007-09-20 Taiyo Nippon Sanso Corp 気相成長装置
US7449071B2 (en) * 2002-03-15 2008-11-11 Asm America, Inc. Wafer holder with peripheral lift ring

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0630552U (ja) * 1992-09-22 1994-04-22 カルソニック株式会社 歯車装置
JPH10219447A (ja) * 1997-02-12 1998-08-18 Fujitsu Ltd 気相成長装置
US6506252B2 (en) * 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
JP2003065402A (ja) * 2001-08-28 2003-03-05 Sumitomo Heavy Ind Ltd 単純遊星歯車構造
JP2007042899A (ja) * 2005-08-03 2007-02-15 Hitachi Cable Ltd 気相成長装置
JP4706531B2 (ja) * 2006-03-27 2011-06-22 日立電線株式会社 気相成長装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068441A (en) * 1997-11-21 2000-05-30 Asm America, Inc. Substrate transfer system for semiconductor processing equipment
US20020083899A1 (en) * 2000-12-07 2002-07-04 E.E. Technologies Inc. Film-forming device with a substrate rotating mechanism
US20030029384A1 (en) * 2001-08-09 2003-02-13 Moore Epitaxial, Inc. Rotating susceptor and method of processing substrates
US7449071B2 (en) * 2002-03-15 2008-11-11 Asm America, Inc. Wafer holder with peripheral lift ring
US20060124062A1 (en) * 2004-10-12 2006-06-15 Hitachi Cable, Ltd. Vapor phase growth apparatus
JP2007243060A (ja) * 2006-03-10 2007-09-20 Taiyo Nippon Sanso Corp 気相成長装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150079764A1 (en) * 2013-09-13 2015-03-19 Kabushiki Kaisha Toshiba Vapor phase growth apparatus and vapor phase growth method
WO2020084164A1 (de) * 2018-10-26 2020-04-30 Oerlikon Surface Solutions Ag, Pfäffikon Werkstückträgereinrichtung und beschichtungsanordnung
CN112912537A (zh) * 2018-10-26 2021-06-04 欧瑞康表面解决方案普费菲孔股份公司 工件支架装置和覆层设备
US11806737B2 (en) 2018-10-26 2023-11-07 Oerlikon Surface Solutions Ag, Pfaffikon Workpiece carrier device and coating arrangement

Also Published As

Publication number Publication date
TW201110198A (en) 2011-03-16
US9765427B2 (en) 2017-09-19
WO2010147053A1 (ja) 2010-12-23
JPWO2010147053A1 (ja) 2012-12-06
US20160130695A1 (en) 2016-05-12
CN102804339B (zh) 2015-01-14
KR101650839B1 (ko) 2016-08-24
CN102804339A (zh) 2012-11-28
KR20120034101A (ko) 2012-04-09
JP5613159B2 (ja) 2014-10-22
TWI527089B (zh) 2016-03-21

Similar Documents

Publication Publication Date Title
US9765427B2 (en) Vapor phase growth apparatus
US6800183B2 (en) Sputtering device
KR100703087B1 (ko) 다중 기판의 화학 기상 증착 장치
US20130298836A1 (en) Vapor phase growth apparatus
JP2006114547A (ja) 気相成長装置
US20120097106A1 (en) Physical vapor deposition device for coating workpiece
JPH01193630A (ja) 粒状物搬送および検査装置
US20110036711A1 (en) Sputtering device
US20120097103A1 (en) Physical vapor deposition device for coating workpiece
US20120090541A1 (en) Workpiece carrier and deposition device having same
JP4830982B2 (ja) 気相成長装置および気相成長方法
CN211471545U (zh) 一种化学气相沉积行星托盘装置
JP2009099770A (ja) 気相成長装置
JP2006128561A (ja) 基板回転機構およびそれを備えた成膜装置
JP2000282234A (ja) スパッタリング装置
JP3070158B2 (ja) 薄膜気相成長装置のサセプタ回転支持構造
JP5144328B2 (ja) 気相成長装置
KR100855174B1 (ko) 기판 돔을 포함하는 진공 장치, 그 조립 및 분해 방법, 및 기판 돔을 포함하는 진공장치에서의 성막 방법
CN215409984U (zh) 一种承托机构
CN220827454U (zh) 镀膜室及镀膜设备
JP4648806B2 (ja) 遊星歯車装置
JP4070890B2 (ja) 内歯歯車昇降機構付き平面研磨装置
CN210255037U (zh) 一种螺钉垫圈装配机
CN110496749B (zh) 通过使用多固化设备制造半导体芯片的方法及多固化设备
CN210006715U (zh) 纺锤形工件的旋转机构

Legal Events

Date Code Title Description
AS Assignment

Owner name: TAIYO NIPPON SANSO CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YAMAGUCHI, AKIRA;UCHIYAMA, KOSUKE;SIGNING DATES FROM 20111212 TO 20111216;REEL/FRAME:027407/0491

Owner name: TN EMC LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YAMAGUCHI, AKIRA;UCHIYAMA, KOSUKE;SIGNING DATES FROM 20111212 TO 20111216;REEL/FRAME:027407/0491

AS Assignment

Owner name: TNCSE LTD., JAPAN

Free format text: CHANGE OF NAME;ASSIGNOR:TN EMC LTD.;REEL/FRAME:033747/0815

Effective date: 20140414

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION