US20120091339A1 - Charged-particle microscope device, and method of controlling charged-particle beams - Google Patents

Charged-particle microscope device, and method of controlling charged-particle beams Download PDF

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Publication number
US20120091339A1
US20120091339A1 US13/378,561 US201013378561A US2012091339A1 US 20120091339 A1 US20120091339 A1 US 20120091339A1 US 201013378561 A US201013378561 A US 201013378561A US 2012091339 A1 US2012091339 A1 US 2012091339A1
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charged
irradiation
inspection
observation
charge accumulation
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Yusuke Ominami
Hiroshi Miyai
Yasuhiro Gunji
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices

Definitions

  • the present invention relates to a technology of controlling a charged state and an observation state of a sample by using a charged-particle microscope device.
  • Semiconductor devices such as memories and microcomputers used for computers and the like are manufactured by repeatedly performing processes of transferring patterns of circuits or the like formed in photomasks by exposing, lithographing, and etching processes.
  • the manufacturing yield of semiconductor devices is greatly influenced by the quality of results from lithographing, etching, and other processes and by the presence of a defect, such as occurrence of a foreign matter. Accordingly, in order to detect occurrences of an abnormality or a defect at an early phase or in advance, a pattern on a semiconductor wafer is inspected at the end of each manufacturing step using a scanning electron microscope (hereinafter also referred to as an SEM)-type visual inspection device.
  • an inspection method using such an SEM is referred to as an electron beam inspection method.
  • the electron beam inspection method obtains a higher-resolution observation image than optical visual inspection or laser inspection, and accordingly is capable of detecting a minute foreign matter and defect on a fine circuit pattern.
  • the electron beam inspection method can form voltage contrast, resulting from reflection of a potential difference on the surface in the efficiency of emitting secondary electrons, due to charge accumulation by electron beam irradiation. Accordingly, electrical continuity or non-continuity of a circuit pattern formed on the surface of a semiconductor wafer or a lower layer therein as well as an electrical defect such as a short circuit in an interconnection or a transistor can also be detected with observation images thereof.
  • an inspection result is greatly affected due to charge accumulation.
  • secondary electrons or reflected electrons generated from an observation sample by simply scanning with an electron beam are detected and converted into a signal as in an ordinal scanning electron microscope, the obtained result brings about a problem that only an insufficient amount of charges are accumulated on the observation sample at the time of obtaining an observation image.
  • Patent Document 1 describes a method of enhancing charge accumulation on an observation sample using an electron gun for enhancing charge accumulation, the electron gun provided in addition to an electron gun for electron microscope.
  • an observation sample or defect portion to be detected is a capacitance component in an equivalent circuit
  • the surface potential state of the observation sample or defect portion to be detected is determined by the capacitance component.
  • the aforementioned waiting time is determined by a period from when charges begin accumulating on the capacitance component to when the charge accumulation reaches the maximum. In other words, the period from a moment when charges begin accumulating on the observation sample or defect portion to be detected to a moment for observation is an important factor in determining the aforementioned optimum electric-potential distribution or charged state.
  • Patent Documents 2 and 3 describe inspection methods in which an observation sample including a plug having a pn junction is irradiated with an electron beam multiple times at irradiation intervals shorter than the charge relaxation period of a plug having a normal pn junction to thereby make charge accumulation on the plug having the normal pn junction reach a saturated state.
  • a normal portion and a leakage-generated portion are made to have a difference in charge accumulation, and are distinguished from each other through observation of the difference in charge accumulation as voltage contrast, i.e., the difference in brightness.
  • this interval of multiple electron beam irradiations is described such that the electron beam current, the electron beam irradiation time, and the interval time of electron beam irradiation are made variable and controlled independently. Further, it is stated that the settings thereof are made by inputting individual inspection parameters, or that by selecting a desired inspection condition file from combinations of various inspection parameters which are organized as inspection condition files in a database in advance.
  • inspection of an observation sample or defect portion to be detected can be performed only after waiting for charges to be optimally accumulated on the observation sample or defect portion to be detected by irradiation of charged-particle beams including electron beams.
  • the inspection device has to achieve as high inspection throughput as possible, by scanning with electron beams for irradiating an observation sample and detecting a signal such as secondary electrons generated from the observation sample at high speeds.
  • the interval time of electron beam irradiation among them is set to merely to bring charge accumulation on a plug having a normal pn junction (the plug corresponds to an observation sample) into the saturated state by performing multiple times of electron beam irradiations.
  • the interval time of the electron beam irradiation is also set to bring the charge accumulation on an observation sample into the saturated state by performing multiple electron beam irradiations, but is not intended to set a period from a moment when charges begin accumulating on an observation sample or defect portion to be detected to a moment for observation.
  • Patent Documents 2 and 3 still requires a lot of work for the settings by inputting individual inspection parameters such as interval time or by selecting an inspection condition file from predetermined combinations of inspection parameters. This is because a period for forming an optimum electric-potential distribution or charged state for observation varies due to a small difference in conditions of an observation sample or defect portion as described above.
  • An object of the present invention is to provide a charged-particle microscope device and a method of controlling charged-particle beams both including a technology of controlling charge accumulation and controlling electron beams, which are capable of signal detection at the time when the charged state of an observation sample or a defect portion becomes optimum.
  • a charged-particle microscope device and a method of controlling charged-particle beams according to the present invention are characterized by having a function of irradiating any inspection region of an observation sample with charged-particle beams at least twice or more times, and a function of precisely and speedily setting a time lag between an initial ((n ⁇ 1)th (note that n>2)) charged-particle beam irradiation for enhancing charge accumulation and a next (nth) charged-particle beam irradiation for sample observation (or for capturing an image), depending on a state of the observation sample or a defect portion.
  • the time lag between the initial charged-particle beam irradiation for enhancing charge accumulation and the next charged-particle beam irradiation for sample observation is adjusted by a controlling electromagnetic lens for charged-particle beam irradiation at least twice or more times and a control system of the controlling electromagnetic lens.
  • the time lag can be easily set based on an inspection result of adjusted time lags for inspection sites that are further restricted regions in any observation region of an observation sample.
  • the time lag between the initial charged-particle beam irradiation for enhancing charge accumulation and the next irradiation for sample observation can be adjusted also by providing two or more charged-particle beam generators.
  • an optimum charge accumulation-waiting time from an initial charged-particle beam irradiation for enhancing charge accumulation until a next charged-particle beam irradiation for sample observation can be precisely, speedily, and easily set. This enables detection of a signal such as a secondary electron generated from an observation sample at the time when the charged state of the observation sample becomes optimum. Thus, the accuracy of the inspection result can be improved, and the inspection throughput can also be increased.
  • FIG. 1 is a cross-sectional view of a semiconductor wafer, as one example of an observation sample, including a normal portion and a defect portion.
  • FIG. 2 is a circuit diagram of an equivalent circuit of each of a normal portion and a defect portion of a via when each portion is irradiated with a charged-particle beam.
  • FIG. 3 is a graph showing a relationship between the passage of time and a voltage in a case where a pulse current having a current pulse width of 10 [nsec] is inputted to each of the normal portion and the defect portion.
  • FIG. 4 is a configuration diagram of an SEM-type visual inspection device according to one embodiment of the present invention.
  • FIG. 5 is an explanatory drawing illustrating a manner that arbitrary number of irradiation positions aligned in a direction of one scanning line with the electron beam are sequentially irradiated with an electron beam, and the electron beam then returns to an original irradiation position.
  • FIG. 6 is an explanatory drawing illustrating a manner that irradiation positions of a maximum number of pixels included in one scanning line with the electron beam are sequentially irradiated with an electron beam for each of multiple scanning lines, and the electron beam then returns to an irradiation-starting position on an original scanning line.
  • FIG. 7 is a view showing one example of an inspection parameter-input screen as one mode of an input monitor screen in the SEM-type visual inspection device.
  • FIG. 8 is a view showing one example of an inspection starting screen as one mode of the input monitor screen in the SEM-type visual inspection device.
  • FIG. 9 is a flowchart of an inspection condition-setting process executed when the SEM-type visual inspection device conducts an actual inspection.
  • FIG. 10 is a table for explaining stored data accumulatively stored in a storage part as a result of trial inspections repeated several times while inspection conditions are changed.
  • FIG. 11 is an example of a result of trial inspections repeated several times while inspection conditions are changed, the result displayed in the form of a graph in an inspection result-display window based on a relationship between a charge accumulation-waiting time T and the number of defects.
  • FIG. 12 is an example of the result of the trial inspections repeated several times while inspection conditions are changed, the result displayed in the form of a graph in the inspection result-display window based on a relationship between a sampling frequency f and the number of defects.
  • FIG. 13 is a configuration diagram of one example of an SEM-type visual inspection device according to another embodiment of the present invention, the SEM-type visual inspection device including at least two or more electron guns for electron beam irradiation.
  • FIG. 14 is a configuration diagram of another example of the SEM-type visual inspection device including at least two or more electron guns for electron beam irradiation.
  • FIG. 15 is a view showing one example of an inspection parameter-input screen as one mode of an input monitor screen in the SEM-type visual inspection device including the at least two or more electron guns.
  • FIG. 16 shows a modification example of the inspection parameter-input screen shown in FIG. 15 .
  • the present invention is applicable also to general charged-particle microscope devices such as electron microscope devices and ion microscopes; nevertheless, in the following description, the embodiments will be specifically described taking an example where the present invention is applied to a visual inspection device installed in a manufacturing step of semiconductor wafers. Additionally, in the visual inspection device in the embodiments, the charged-particle microscope device for observing an image is supposed to be an SEM. Controlling charge accumulation-waiting time to be described later is applicable also to a visual inspection device including an electron emission microscope (EEM, electron emission microscopy) for surface irradiation.
  • EEM electron emission microscope
  • the SEM-type visual inspection device has a function of controlling or setting charged-particle beam irradiation time and time between an initial (for example, first) charged-particle beam irradiation and a next (for example, second) charged-particle beam irradiation.
  • the basic principle for identifying a defect with the SEM-type visual inspection device of the present embodiments will be described taking an example, for convenience of description, where the observation sample is a semiconductor wafer in which multiple vertical interconnections (hereinafter referred to as vias) are formed.
  • FIG. 1 is a cross-sectional view of the semiconductor wafer, as one example of the observation sample, including a normal portion and a defect portion.
  • a semiconductor wafer 100 illustrated as an observation sample has a configuration in which multiple vias 110 are formed at intervals apart from each other in an insulating film layer 103 formed on a metal film 102 on the surface of a substrate 101 .
  • Each of the vias 110 is a vertical interconnection having one end exposed from the surface of the wafer and the other end extending in a film thickness direction of the insulating film layer 103 in such a manner as to contact the metal film 102 .
  • the multiple vias 110 include: a normal portion 111 whose via hole penetrates the insulating film layer 103 , so that a bottom portion (the other end) of the via 110 contacts the metal film 102 ; and a defect portion 112 whose via hole does not penetrate the insulating film layer 103 , so that a bottom portion (the other end) of the via 110 does not contact the metal film 102 with an insulating film portion (defect portion) 104 interposed between the via hole and the metal film 102 .
  • FIG. 2 shows equivalent circuits in a case where such a normal portion 111 and a defect portion 112 of the vias 110 are each irradiated with an electron beam, that is, a charged-particle beam.
  • FIG. 2 is an equivalent circuit of each of the normal portion and the defect portion of the vias when each portion is irradiated with a charged-particle beam. Part (a) of FIG. 2 shows the equivalent circuit of the normal portion of the via, and Part (b) of FIG. 2 shows the equivalent circuit of the defect portion of the via.
  • a via interconnection resistance R 1 and a metal film resistance R 2 can represent a portion of the equivalent circuit between the via and the metal film in the normal portion 111 .
  • a capacitance component C 2 and a resistance component R 4 of the insulating film portion (defect portion) 104 in addition to the via interconnection resistance R 1 and the metal film resistance R 2 can represent a portion of the equivalent circuit between the via and the metal film in the defect portion 112 .
  • a metal-metal interface resistance at a contact portion between the via 110 and the metal film 102 in the normal portion 111 and a metal-insulating film interface resistance at a contact portion between the via 110 or the metal film 102 and the insulating film portion 104 in the defect portion 112 are omitted for convenience to facilitate understanding in the above description of the equivalent circuit. Additionally, the defect portion 112 and the normal portion 111 of the vias 110 differ from each other in the resistance value of the via interconnection resistance R 1 only by the difference in the resistance length that corresponds to the presence or absence of the thickness of the insulating film portion 104 .
  • both of the normal portion 111 and the defect portion 112 are shown to have the same value of the interconnection resistance R 1 in the via 110 for convenience.
  • the semiconductor wafer 100 having these vias 110 formed is irradiated with an electron beam, while being held on a sample stage 7 of an SEM-type visual inspection device 1 to be described later.
  • the metal film 102 of the semiconductor wafer 100 held on the sample stage 7 is electrically in contact with the sample stage 7 with the substrate 101 therebetween.
  • a portion between the sample stage 7 and the metal film 102 of the semiconductor wafer 100 can be represented by an equivalent circuit which has a configuration including a resistance component R 3 and a capacitance component C 1 of the substrate 101 .
  • a potential V at the wafer surface of each of the normal portion 111 and the defect portion 112 of the vias 110 in the semiconductor wafer 100 can be represented by a circuit formula of formulas (1) and (2) where R 1 is a resistance value of the via interconnection resistance R 1 , R 2 is a resistance value of the metal film resistance R 2 , R 3 is a resistance value of the resistance component between the wafer and the stage, R 4 is a resistance component of the insulating film portion 104 that is a defect portion, C 1 is a capacitance component between the wafer and the stage, C 2 is a capacitance component of the insulating film portion 104 that is a defect portion, and I is an input current by electron beam irradiation.
  • j is an imaginary number
  • ⁇ is an angular frequency of the input current I.
  • the potential V at the wafer surface of the defect portion 112 represented by the formula (2) has an impedance component (R 4 /(1+j ⁇ C 2 R 4 )) of the defect portion in the fourth term unlike the potential V at the wafer surface of the normal portion 111 represented by the formula (1). Accordingly, by comparing a potential V at each portion of the wafer surface, the normal portion 111 and the defect portion 112 can be distinguished from each other.
  • the SEM continuously perform scanning with electron beams, it can be said that the input current I is rapidly inputted to the normal portion 111 or the defect portion 112 in the semiconductor wafer 100 .
  • a current pulse corresponding to the input current I is applied to the normal portion 111 or the defect portion 112 .
  • FIG. 3 is a graph showing a relationship between the passage of time and a voltage in a case where a pulse current having a current pulse width of 10 [nsec] is inputted to each of the normal portion and the defect portion.
  • the wafer surface of the normal portion 111 keeps a voltage around 0.1 [mV].
  • the potential V at the wafer surface of the defect portion 112 rises to around 1 [V] that is the maximum value, and then continues to fall, over approximately 10 [used], to around 0 [V] that is a value before the current is inputted.
  • a signal for the potential at the wafer surface of each of the normal portion 111 and the defect portion 112 is desirably detected around a point B shown in the graph where the difference ⁇ V in potential at the surface between the normal portion 111 and the defect portion 112 is the largest.
  • charge accumulation-waiting time T time from an initial (for example, first) electron beam irradiation for enhancing charge accumulation to a next (for example, second) irradiation for sample observation (hereinafter, the period is referred to as charge accumulation-waiting time T) is very important in order to distinguish the normal portion 111 from the defect portion 112 .
  • the values of the circuit components of the equivalent circuits 121 , 122 of the normal portion 111 and the defect portion 112 shown in FIG. 2 differ from actual values, depending on the wafer state, defect state, measurement conditions, and the like. Thus, if, for example, the resistance value or the capacitance value of a corresponding circuit component varies, the rising period and the falling period of the wafer surface potential V of each of the normal portion 111 and the defect portion 112 are changed.
  • the charge accumulation-waiting time T is still an important parameter in order to observe the normal portion 111 or the defect portion 112 at an optimum surface potential V.
  • FIG. 4 is a configuration diagram of an SEM-type visual inspection device according to a first embodiment of the present invention.
  • An SEM-type visual inspection device 1 includes an electron gun 3 having an electron source 2 , a deflector 4 , a blanking electrode 5 , an objective lens 6 , a sample stage 7 , a detector 8 , a detection controller 9 , an image processor 10 , a lens controller 11 , a deflector controller 12 , a computer 13 , a monitor 14 , and an input instrument 15 .
  • the electron gun 3 accelerates electrons (charges particles) generated by the electron source 2 , and generates an electron beam 21 (primary electron beam 21 ) to irradiate a semiconductor wafer 100 that is the observation sample 100 .
  • the deflector 4 deflects the electron beam 21 on the basis of a deflection signal supplied from the deflector controller 12 , and two-dimensionally scans the observation sample 100 with the electron beam 21 .
  • the blanking electrode 5 deflects the electron beam 21 according to a blanking signal supplied from the lens controller 11 in such a manner that the observation sample 100 is not irradiated with the electron beam 21 , and turns ON/OFF the irradiation with the electron beam 21 on the observation sample 100 .
  • the objective lens 6 makes, according to a convergence signal supplied from the lens controller 11 , the electron beam 21 deflected by the deflector 4 converge as a small spot on the observation sample 100 placed on the sample stage 7 .
  • the semiconductor wafer 100 that is an observation sample is placed.
  • the detector 8 detects an emitted electron 22 such as a secondary electron or a reflected electron generated from the semiconductor wafer 100 by irradiation with the electron beam 21 .
  • the detection controller 9 amplifies a detection signal from the detector 8 , and then converts the detection signal on the basis of a sampling clock from analog to digital signal.
  • the image processor 10 executes processes such as generating image data on the observation sample 100 on the basis of digital detection data supplied from the detection controller 9 , and determining the presence or absence of the defect portion 112 from the obtained image data on the observation sample 100 .
  • the image processor 10 includes: an image generator for generating image data based on the digital detection data; an image storage part for storing the image data; an operation part for comparing and computing the image data; and a defect determining part for processing such as defect determination of the defect portion 112 based on the result of comparing and computing processes on the image data.
  • the lens controller 11 operates and controls the electron gun 3 , the deflector 4 , the blanking electrode 5 , and various electromagnetic lenses such as the objective lens 6 on the basis of observation conditions that reflect inspection conditions supplied from the computer 10 .
  • the deflector controller 12 operates and controls the deflector 4 according to a deflection control instruction based on the observation conditions that reflect the inspection conditions supplied from the lens controller 11 .
  • the computer 13 is connected to the image processor 10 , the lens controller 11 , the monitor 14 , the input instrument 15 , and the like, and controls these connected components.
  • the computer 13 OSD (On Screen Display)-displays an input screen on the monitor 14 for inputting and setting various data as the inspection conditions.
  • the computer 13 causes the image processor 10 and the lens controller 11 to execute an image capturing process and a defect determining process based on the inspection conditions, in accordance with the inspection conditions based on the inspection parameters inputted and set by operating the input instrument 15 .
  • the computer 13 thus acquires the processing results.
  • the processing results thus acquired are displayed and reflected on the input screen that is OSD-displayed on the monitor 14 .
  • the monitor 14 displays the inspection results such as the position of the defect portion 112 , the type of the defect portion 112 and the number of defects, and also OSD-displays the input screen for inputting and setting inspection parameters of the inspection conditions.
  • the input instrument 13 is for operating a GUI (Graphical User Interface) and the like on the input screen OSD-displayed on the monitor 14 , and for inputting and setting the inspection parameters.
  • the input instrument 13 has input devices such as, for example, a keyboard and a pointing device.
  • the SEM-type visual inspection device 1 having such a configuration is configured to inspect the semiconductor wafer 100 as an observation sample in accordance with inspection conditions based on inputted and set inspection parameter, schematically as follows.
  • the electron beam 21 emitted from the electron gun 3 is deflected by the deflector 4 and converges by the objective lens 6 .
  • the semiconductor wafer (observation sample) 100 placed on the sample stage 7 is scanned and irradiated with the electron beam 21 .
  • the beam trajectory of the electron beam 21 is bent by the blanking electrode 5 , so that the semiconductor wafer 100 is not irradiated with the electron beam 21 .
  • the detector 8 detects the emitted electron 22 .
  • the detection signal from the detector 8 is amplified by the detection controller 9 .
  • the detection signal is converted from analog to digital by the deflector 4 on the basis of a sampling clock in synchronism with scanning with the electron beam 21 .
  • this digital detection data is transmitted to the image processor 10 , and image data on an observation region on the semiconductor wafer 100 corresponding to the scanning range of the electron beam 21 is generated by the image processor 10 .
  • the image processor 10 determines the presence or absence of the defect portion 112 on the circuit pattern and the type of the defect portion 112 , on the basis of the generated image data in which the voltage contrast of the observation region of the semiconductor wafer 100 irradiated with the electron beam 21 reflects a difference in brightness.
  • the SEM-type visual inspection device 1 is capable of controlling the irradiation time of the electron beam 21 and the “charge accumulation-waiting time T” between the initial (for example, first) charged-particle beam irradiation for enhancing charge accumulation and the next (for example, second) charged-particle beam irradiation for sample observation by an irradiation method of the electron beam 21 .
  • the “charge accumulation-waiting time T” is a period between the irradiation with the electron beam 21 for enhancing charge accumulation and the subsequent irradiation for observation, serving as a parameter for observing the normal portion 111 or the defect portion 112 on a circuit pattern of the semiconductor wafer 100 at the optimum surface potential V.
  • the observation sample 100 in order to control the time T from the initial (for example, first) electron beam irradiation for enhancing charge accumulation to the subsequent (for example, second) electron beam irradiation for sample observation, that is, the “charge accumulation-waiting time T,” the observation sample 100 needs to be irradiated with the electron beam 21 at least twice or more times.
  • a first method is a method of generating “charge accumulation-waiting time T” as follows. Specifically, the first electron beam irradiation for enhancing charge accumulation is performed by sequentially irradiating with the electron beam 21 some irradiation positions P 1 , P 2 , P 3 , . . . , Pi sequentially aligned on the observation sample 100 in a scanning line direction of the electron beam 21 , the irradiation positions P 1 , P 2 , P 3 , . . . , Pi corresponding to some pixels p 1 , p 2 , p 3 , . . . , pi sequentially aligned on an observation region.
  • the electron beam 21 returns to the original irradiation positions P 1 , P 2 , P 3 , . . . , Pi to start the second electron beam irradiation for sample observation on the irradiation positions P 1 , P 2 , P 3 , . . . , Pi.
  • FIG. 5 is an explanatory drawing illustrating a manner that arbitrary number of irradiation positions aligned in a direction of one scanning line with the electron beam are sequentially irradiated with an electron beam, and the electron beam then returns to the original irradiation position.
  • reference numeral 130 denotes an observation region of the observation sample 100 .
  • a broken-line arrow 61 illustrates the manner of scanning while irradiating with the electron beam 21 arbitrary number i of the irradiation positions P 1 , P 2 , P 3 , . . . , Pi sequentially aligned on the observation region 130 in the direction of one scanning line with the electron beam 21 (i.e., a direction of a horizontal scanning line).
  • a solid-line arrow 62 represents a retrace line (horizontal retrace line) of the electron beam 21 to the irradiation position P 1 that is a second scanning-starting position from the irradiation position P 1 that is the first scanning-terminating position after the first scanning with the electron beam 21 on the arbitrary number i of the irradiation positions P 1 , P 2 , P 3 , . . . , Pi.
  • the charge accumulation-waiting time T for each pixel can be represented by a formula (3) where T d is beam irradiation time per pixel (irradiation position) with the electron beam 21 , and N i is the number of pixels (the number of irradiation positions) irradiated with the electron beam 21 after the first irradiation with the electron beam 21 for enhancing charge accumulation is started until the electron beam 21 returns for the second irradiation for observation on the same pixels (the same irradiation positions).
  • T (1) N i ⁇ T d (3)
  • the deflector controller 12 can determine the beam irradiation time T d per pixel (per irradiation position) and the number N i of pixels (the number of irradiation positions) irradiated with the electron beam 21 until the electron beam 21 returns to the same pixel (the same irradiation position).
  • T d per pixel per irradiation position
  • N i of pixels the number of irradiation positions
  • the width and the number of pixels to be scanned with the electron beam 21 are predetermined. For this reason, provided that N L is the maximum number of pixels in one scanning line with the electron beam 21 , the number N i of pixels (the number of irradiation positions) irradiated with the electron beam 21 until the electron beam 21 returns to the same pixel (the same irradiation position) and the maximum number N L of pixels in one scanning line with the electron beam 21 have a relationship shown in a formula (4).
  • desired required charge accumulation-waiting time T can be generated by the repetitive back and forth movement of the electron beam 21 between the scanning-starting pixel p 1 (irradiation-starting position P 1 ) and the scanning-terminating pixel pi (irradiation-terminating position Pi), as long as the beam irradiation time T d per pixel (per irradiation position) and the number N i of pixels (the number of irradiation positions) irradiated with the electron beam 21 within the range of one scanning line with the electron beam 21 are set as appropriate.
  • a second method is a method of generating “charge accumulation-waiting time T” as follows. Specifically, scanning with the electron beam 21 on each pixel of the maximum number N L of pixels included in the range of one scanning line with the electron beam 21 is performed in the sequence of scanning lines S 1 , S 2 , S 3 , . . . , Si sequentially aligned on an observation region 140 in a direction perpendicular to the scanning direction to perform the first electron beam irradiation for enhancing charge accumulation.
  • FIG. 6 is an explanatory drawing illustrating a manner that irradiation positions of the maximum number of pixels included in one scanning line with the electron beam are sequentially irradiated with an electron beam for each of the multiple scanning lines, and the electron beam then returns to the irradiation-starting position on the original scanning line.
  • reference numeral 140 denotes an observation region of the observation sample 100 .
  • Broken-line arrows 63 thereon illustrate the manner of scanning while sequentially irradiating with the electron beam 21 each of scanning lines S sequentially aligned on the observation region 140 in the sequence of the scanning lines S 1 , S 2 , S 3 , . . . , Si.
  • a solid-line arrow 64 represents a retrace line (vertical retrace line) of the electron beam 21 to the scanning-starting pixel p 1 (irradiation-starting position P 1 ) on the first scanning line S 1 for the second scanning from the scanning-terminating pixel p S ⁇ L (irradiation-terminating position P S ⁇ L ) on the last scanning line Si in the first scanning after the first scanning with the electron beam 21 on the multiple scanning lines S 1 , S 2 , S 3 , . . . , Si.
  • the charge accumulation-waiting time T for each pixel can be represented by a formula (5) where Td is beam irradiation time per pixel (per irradiation position) with the electron beam 21 , N L is the number of pixels (the number of irradiation positions) in one scanning line S, and N S is the number of the scanning lines S irradiated with the electron beam 21 until the electron beam 21 returns to the same pixel (the same irradiation position).
  • T (2) N S ⁇ N L ⁇ T d (5)
  • desired required charge accumulation-waiting time T can be generated by the repetitive back and forth movement of the electron beam 21 between the scanning-starting pixel p 1 (irradiation-starting position P 1 ) on the first scanning line Si in the sequence of the scanning and the scanning-terminating pixel p S ⁇ L (irradiation-terminating position P S ⁇ L ) on the last scanning line Si in the sequence of the scanning, as long as the beam irradiation time T d per pixel (per irradiation position), the number N L of pixels (the number of irradiation positions) irradiated in one scanning line S with the electron beam 21 , the number N S of the scanning lines S irradiated with the electron beam 21 until the electron beam 21 returns to the same pixel (the same irradiation position) are set as appropriate.
  • a third method is the above-described first method of performing one-dimensional scanning within the scanning range of one scanning line with the electron beam 21 , in which “charge accumulation-waiting time T” is generated as follows. Specifically, in, some irradiation positions P 1 , P 2 , P 3 , . . . , Pi sequentially aligned on the observation sample 100 in the scanning direction of the electron beam 21 are scanned while sequentially irradiated with the electron beam 21 to perform the first electron beam irradiation for enhancing charge accumulation. Then, to start the second electron beam irradiation for sample observation on the irradiation positions P 1 , P 2 , P 3 , . . . , Pi, time T b during which the observation sample 100 is not irradiated with the electron beam 21 is provided when the electron beam 21 returns to the original irradiation position P 1 to start the second electron beam irradiation for sample observation.
  • the time T b during which the observation sample 100 is not irradiated with the primary electron beam 21 can be set by turning OFF the irradiation with the electron beam 21 on the observation sample 100 using the blanking electrode 5 .
  • the blanking electrode 5 blanks the electron beam 21 only by the time T b .
  • the formula (3) is modified, and the charge accumulation-waiting time T can be represented as shown in a formula (6).
  • T (3) N i ⁇ T d +T b (6)
  • the number N i of pixels (the number of irradiation positions) irradiated with the electron beam 21 within the scanning range of one scanning line with the electron beam 21 may be ‘0.’ This corresponds to a case where after the first irradiation with the electron beam 21 is performed only on the irradiation position P of one pixel p, the electron beam 21 is blanked for the time T b one time, followed by the second irradiation with the electron beam 21 on the irradiation position P of the same pixel p.
  • desired required charge accumulation-waiting time T can be generated by further adding, in addition to the charge accumulation-waiting time T (1) obtained by the repetitive back and forth movement of the electron beam 21 in the first method, the blanking time T b between the first scanning and the second scanning with the electron beam 21 , the blanking time T b not depending on the beam irradiation time T d and the number N i of pixels (the number of irradiation positions) irradiated with the electron beam 21 .
  • a fourth method is the above-described second method of performing two-dimensional scanning on multiple scanning lines S with the electron beam 21 , in which every time one-dimensional scanning with the electron beam 21 on each pixel of the maximum number N L of pixels in one scanning line is completed, time T b during which the observation sample 100 is not irradiated with the electron beam 21 is provided before one-dimensional scanning with the electron beam 21 on the next one scanning line is started.
  • the time T b during which the observation sample 100 is not irradiated with the electron beam 21 is provided after the irradiation with the electron beam 21 on one scanning line (for example, scanning line S 1 ) is completed, but before the irradiation with the electron beam 21 on the next one scanning line (for example, scanning line S 2 ) is started.
  • the time T b during which the observation sample 100 is not irradiated with the electron beam 21 can be set by turning OFF the irradiation with the electron beam 21 on the observation sample 100 using the blanking electrode 5 .
  • the charge accumulation-waiting time T can be represented as shown in a formula (7).
  • T (4) N S ⁇ N L ⁇ T d +N S ⁇ T b (7)
  • desired required charge accumulation-waiting time T can be generated by further adding, in addition to the charge accumulation-waiting time T (2) obtained by the repetitive back and forth movement of the electron beam 21 in the second method, the blanking time T b every time the irradiation with the electron beam 21 on one scanning line S is completed, the blanking time T b not depending on the beam irradiation time T d and the number N i of pixels (the number of irradiation positions) irradiated with the electron beam 21 .
  • the “charge accumulation-waiting time T” is generated between the initial (first) irradiation with the electron beam for enhancing charge accumulation and the next (second) irradiation with the electron beam 21 for sample observation by the aforementioned methods to emphasize the difference in electrical properties between the normal portion 111 and the defect portion 112 in the semiconductor wafer 100 .
  • the charge accumulation-waiting time T (1) represented by the formula (3) in the first method corresponds to the charge accumulation-waiting time T (3) represented by the formula (6) in the third method in which the blanking time T b during which the observation sample 100 is not irradiated with the electron beam 21 is ‘0.’
  • the charge accumulation-waiting time T (2) represented by the formula (5) in the second method corresponds to the charge accumulation-waiting time T (7) represented by the formula (7) in the fourth method in which the time T b is ‘0.’
  • the way of generating the charge accumulation-waiting time T is selected from the method based on the beam irradiation time T d per pixel (per portion corresponding to one pixel) with the electron beam 21 represented by the formulas (3), (5) and the method based on the blanking time T b during which the observation sample 100 is not irradiated with the electron beam 21 represented by the formulas (6), (7).
  • the SEM-type visual inspection device 1 is capable of setting, as inspection parameters, the parameters in the third method or the fourth method for generating desired required charge accumulation-waiting time T, such as the charge accumulation-waiting time T, the beam irradiation time T d per pixel (per irradiation position), the blanking time T b , the number N i of pixels (the number of irradiation positions) irradiated with the electron beam 21 within the range of one scanning line, the maximum number N L of pixels in one scanning line, the number N S of the scanning lines S irradiated with the electron beam 21 until the electron beam 21 returns to the same pixel (the same irradiation position).
  • desired required charge accumulation-waiting time T such as the charge accumulation-waiting time T, the beam irradiation time T d per pixel (per irradiation position), the blanking time T b , the number N i of pixels (the number of irradiation positions) irradiated with the electron beam 21
  • FIG. 7 is a view showing one example of an inspection parameter-input screen as one mode of an input monitor screen in the SEM-type visual inspection device.
  • An inspection parameter-input screen (displayed as an “image capturing condition-setting screen” in FIG. 7 ) 200 is displayed in the window on the screen of the monitor 14 by the computer 13 on the basis of given operations through the input instrument 15 .
  • the inspection parameter-input screen 200 includes: a charge accumulation-waiting time-input column 201 for inputting the charge accumulation-waiting time T (T (6) or T (7) ) common in the third method and the fourth method; an irradiation time-input column 202 for inputting the irradiation time T d with the electron beam 21 per pixel; and a blanking time-input column 203 for inputting the blanking time T b .
  • the inspection parameter-input screen 200 includes: a beam-irradiated pixel-number-input column 204 for inputting the number N i of pixels irradiated with the beam within the scanning range of one scanning line with the electron beam 21 for irradiation with the electron beam 21 in using the third method; an inspected pixel-number-input column 205 for inputting the number N L of pixels inspected per one scanning line for irradiation with the electron beam 21 in using the fourth method; and a line-number-input column 206 for inputting the number N S of lines irradiated with the electron beam 21 until the same position is scanned, and has a setting button (OK button) 207 for setting input values of these parameters as the inspection parameters of the inspection conditions.
  • a beam-irradiated pixel-number-input column 204 for inputting the number N i of pixels irradiated with the beam within the scanning range of one scanning line with the electron beam 21 for irradiation with the electron beam 21
  • the operator operates the input instrument 15 to input the value of each parameter according to the inspection parameter-input screen 200 displayed on the monitor 14 .
  • the operator first inputs and sets a value of any one of the charge accumulation-waiting time T and the irradiation time T d with the electron beam 21 per pixel through the inspection parameter-input screen 200 .
  • the operator first inputs a value of the charge accumulation-waiting time T.
  • the operator inputs a value of the other parameter of the charge accumulation-waiting time T and the irradiation time T d with the electron beam 21 per pixel.
  • a value of the irradiation time T d with the electron beam 21 per pixel is inputted.
  • the operator When setting the charge accumulation-waiting time T and the irradiation time T d with the electron beam 21 per pixel as described above, the operator next inputs the blanking time T b .
  • the operator inputs through the beam-irradiated pixel-number-input column 204 the beam-irradiated pixel-number N i irradiated with the electron beam 21 within the irradiation range of one scanning line with the electron beam 21 until the electron beam 21 returns to the same position in the case where the charge accumulation-waiting time T (6) represented by the formula (6) in the third method is selected.
  • the operator inputs through the inspected pixel-number-input column 205 and the line-number-input column 206 the number N L of pixels in one scanning line S and the number N S of the scanning lines S irradiated with the electron beam 21 until the electron beam 21 returns to the same pixel (the same irradiation position), respectively.
  • the third method or the fourth method can be selected, depending on whether the operator inputs the beam-irradiated pixel-number N i , or whether the operator inputs the number N L of pixels in one scanning line S and the number N S of the scanning lines S.
  • the method can be automatically determined when the charge accumulation-waiting time T is inputted to the charge accumulation-waiting time-input column 201 .
  • the following configuration may be adopted.
  • the charge accumulation-waiting time T (6) represented by the formula (6) in the third method and the charge accumulation-waiting time T (7) represented by the formula (7) in the fourth method have the relationship represented by the formula (8), if the charge accumulation-waiting time T thus set is greater than a predetermined given value, the fourth method represented by the formula (7) is determined; meanwhile, if the charge accumulation-waiting time T thus set is equal to or smaller than the given value, the third method represented by the formula (6) is determined.
  • the charge accumulation-waiting time T is inputted at first. Accordingly, depending on the value of the charge accumulation-waiting time T thus inputted, the range of selecting each value of the parameters T d , T b , N i , N L , Ns is narrowed. This means less selection choices, making the setting easier.
  • the fourth method represented by the formula (7) when the charge accumulation-waiting time T, the beam irradiation time Td to the same pixel and the blanking time T b are respectively inputted and set to be 100 [usec], 10 [nsec] and 10 [usec], a relationship formula represented by a formula (9) is obtained based on the formula (7).
  • the operator If appropriately inputting the parameters T, T d , T b , N L , Ns through the inspection parameter-input screen 200 as described above, the operator operates the setting button (OK button) 207 to store the parameters T, T d , T b , N L , N S thus inputted through the operation as the inspection parameters of the inspection conditions in the computer 13 of the SEM-type visual inspection device 1 .
  • a trial inspection region to be described later is determined according to the inspection parameter N i or the inspection parameters N L , N S , the irradiation conditions of the electron beam 21 on one pixel (one irradiation position) are tentatively determined by the inspection parameters T, T d , T b , N i or the inspection parameters T, T d , T b , N L , Ns.
  • the computer 13 of the SEM-type visual inspection device 1 displays an inspection starting screen (displayed as an “inspection screen” in FIG. 8 ) 300 as shown in FIG. 8 based on the inspection parameters T, T d , T b , N i , N L , N S in place of the inspection parameter-input screen 200 in the window on the screen of the monitor 14 .
  • FIG. 8 is a view showing one example of the inspection starting screen as one mode of the input monitor screen in the SEM-type visual inspection device.
  • the inspection starting screen 300 is configured to have an inspection region-selection window 310 , a trial inspection result-display window 320 , an inspection condition-setting window 330 , and an expected/inspection result-display window 340 .
  • the inspection region-selection window (displayed as a “wafer map” in FIG. 8 ) 310 includes a wafer map-display section 311 .
  • the wafer map-display section 311 displays a wafer map 312 for determining an inspection region of the semiconductor wafer 100 that is an observation sample based on an inspection recipe selected in advance. The operator can set an inspection region 313 on this wafer map 312 by operating an input device of the input instrument 15 .
  • the inspection region-selection window 310 is further provided with: a region selection key 314 for registering the inspection region 313 as an actual inspection region of the semiconductor wafer 100 that is an observation sample, the inspection region 313 having been set on the wafer map 312 of the inspection region-selection window 310 ; and a cancel key 315 for cancelling the registration setting of the inspection region 313 as the actual inspection region by the operation on the region selection key 314 .
  • the operator can set and reset any inspection region of the semiconductor wafer 100 that is an observation sample on the wafer map 312 displayed in the inspection region-selection window 310 .
  • the trial inspection result-display window (displayed as a “trial inspection result-display section” in FIG. 8 ) 320 displays a list of inspection results of “trial inspections” in a comparable manner, the “trial inspections” each having been conducted by operating a trial inspection-start button 334 to be described later before an “actual inspection” (hereinafter referred to as a “main inspection”) is conducted on the inspection region 313 set on the semiconductor wafer 100 that is an observation sample through the inspection region-selection window 310 .
  • the “trial inspection” refers to a pilot inspection conducted on a trial inspection region of the semiconductor wafer 100 that is an observation sample on the basis of the set inspection conditions, the trial inspection region having a further restricted size relative to the inspection region 313 which is to be actually subjected to electron beam inspection subsequently.
  • this trial inspection region is determined together with the charge accumulation-waiting time T when the inspection parameter N i or the inspection parameters N L , N S are inputted and set using the inspection parameter-input screen 200 .
  • the trial inspection result-display window 320 displays a list of a combination of inspection parameters of the irradiation time T d per pixel and the charge accumulation-waiting time T for each trial inspection, as well as the number of defects detected on the trial inspection regions in the trial inspections using these inspection parameters, the combination and the number of defects detected being in association with each other.
  • the number of defects detected in each trial inspection is displayed in a manner comparable with that in another trial inspection.
  • the inspection condition-setting window (illustrated as an “inspection condition-setting section” in FIG. 8 ) 330 includes a charge accumulation-waiting time-setting column 331 for setting the charge accumulation-waiting time T in the “the main inspection” or the “trial inspection,” an irradiation time-setting column 332 for setting the beam irradiation time T d per pixel, an inspection threshold-setting column 333 for setting an inspection threshold, a trial inspection-start button 334 for starting the trial inspection, a trial inspection-stop button 335 for stopping the trial inspection currently conducted, a main inspection-start button 336 for starting the main inspection, and a main inspection-stop button 337 for stopping the main inspection currently conducted.
  • the charge accumulation-waiting time-setting column 331 and the irradiation time-setting column 332 of the inspection condition-setting window 330 are set to display values of the charge accumulation-waiting time T and the irradiation time T d per pixel, the values having been respectively inputted to the charge accumulation-waiting time-input column 201 and the irradiation time-input column 202 of the above-described inspection parameter-input screen 200 .
  • the inspection condition-setting window 330 the operator can change the settings of the values set and displayed in the charge accumulation-waiting time-setting column 331 and the irradiation time-setting column 332 as described above by operating an input device of the input instrument 15 .
  • the computer 13 of the SEM-type visual inspection device 1 is configured to change the value of the charge accumulation-waiting time T or the irradiation time T d per pixel having been set beforehand through the inspection parameter-input screen 200 to a value reset through the inspection condition-setting window 330 of the inspection starting screen 300 .
  • the computer 13 thus resets the values of other inspection parameters that need to be adjusted, for example, the value of the blanking time T b , and automatically sets the inspection conditions based on the inspection parameters corresponding to this setting change.
  • the operator inputs and sets a gradation level of the luminance of an observation image captured from the semiconductor wafer 100 that is an observation sample, the gradation level serving as the inspection threshold for discriminating the normal portion 111 and the defect portion 112 from the observation image.
  • the computer 13 of the SEM-type visual inspection device 1 is configured to control each component connected thereto, and conduct while controlling the trial inspection on the trial inspection region having a restricted size relative to the inspection region 313 under the inspection conditions thus set.
  • the computer 13 of the SEM-type visual inspection device 1 is configured to control each component connected thereto, and conduct while controlling the main inspection on the inspection region 313 under the inspection conditions thus set.
  • the expected/result-display window (displayed as an “inspection result” in FIG. 8 ) 340 is configured to have an expected inspection time-display column 341 , an actual inspection time-display column 342 , and a defect-number-display column 343 .
  • the expected inspection time-display column 341 displays expected inspection time of the trial inspection or the main inspection in a case where the trial inspection or the main inspection is conducted on the basis of the charge accumulation-waiting time T displayed in the charge accumulation-waiting time-setting column 331 of the inspection condition-setting window 330 and the irradiation time T d per pixel displayed in the irradiation time-setting column 332 , the expected inspection time being computed by the computer 13 .
  • the actual inspection time-display column 342 displays actual inspection time of the trial inspection or the main inspection which have been actually conducted.
  • the defect-number-display column 343 displays the number of the defect portions 112 detected by the image processor 10 in the trial inspection or the
  • FIG. 9 is a flowchart of the inspection condition-setting process executed when the SEM-type visual inspection device conducts an actual inspection.
  • the computer 13 of the SEM-type visual inspection device 1 OSD displays the inspection starting screen 300 on the monitor 14 and executes the inspection condition-setting process shown in FIG. 9 .
  • the operator can adjust the charge accumulation-waiting time T and the irradiation time T per pixel through the inspection condition-setting window 330 .
  • the operator determines irradiation time T d per pixel (Step S 01 ), determines the charge accumulation-waiting time T (Step S 02 ), determines the inspection threshold (Step S 03 ), and operates the trial inspection-start button 334 .
  • the computer 13 of the SEM-type visual inspection device 1 controls each component under the inspection conditions thus set, and conducts the trial inspection on a trial inspection region having a restricted size relative to the actual inspection region 313 (Step S 04 ).
  • This trial inspection is conducted on the trial inspection region of the semiconductor wafer 100 that is an observation sample.
  • the trial inspection region is defined by the number N i of pixels irradiated with the beam, or the number N L of pixels in one scanning line S and the number N S of the scanning lines S irradiated with the electron beam 21 in the irradiation method of the electron beam 21 selected from any one of the third method with the charge accumulation-waiting time T (6) in the formula (6) and the fourth method with the charge accumulation-waiting time T (7) in the formula (7) after the operator adjusts the values of the inspection parameters T d , T, T b having been inputted beforehand through the inspection parameter-input screen 200 in accordance with the irradiation time T d per pixel and the charge accumulation-waiting time T determined through the inspection condition-setting window 330 of the inspection starting screen 300 .
  • the computer 13 of the SEM-type visual inspection device 1 saves the inspection result in association with the inspection parameters as the inspection conditions in the unillustrated storage part, the inspection result including the number of defects detected by the image processor 10 based on the inspection threshold. Moreover, the computer 13 displays the result in the trial inspection result-display window 320 of the inspection starting screen 300 and in the actual inspection time-display column 342 and the defect-number-display column 343 of the expected/result-display window 340 (Step S 05 ).
  • Step S 06 If it is necessary to change the inspection conditions by resetting the values of the inspection parameters such as the charge accumulation-waiting time T based on the comparison among the inspection results of the trial inspections displayed in the trial inspection result-display window 320 of the inspection starting screen 300 , the comparison between the expected inspection time and the actual inspection time of this current trial inspection displayed in the expected/result-display window 340 , and the like (Step S 06 ), the operator returns to Step 1 , changes the inspection conditions, and again conducts the trial inspection (Steps S 01 to S 05 ).
  • the inspection parameters such as the charge accumulation-waiting time T based on the comparison among the inspection results of the trial inspections displayed in the trial inspection result-display window 320 of the inspection starting screen 300 , the comparison between the expected inspection time and the actual inspection time of this current trial inspection displayed in the expected/result-display window 340 , and the like (Step S 06 )
  • FIG. 10 is a table for explaining the stored data accumulatively stored in the storage part as a result of the trial inspections repeated several times while the inspection conditions are changed.
  • Step 5 the computer 13 displays the results of the trial inspections repeated several times while the inspection conditions are changed in the trial inspection result-display window 320 of the inspection starting screen 300 as shown in FIG. 8 , the results including the current trial inspection result.
  • the operator thus can compare the irradiation time T d per pixel, the charge accumulation-waiting time T, and the number of defects detected for each trial inspection, and derive optimum inspection conditions.
  • the computer 13 displays the current trial inspection result and the actual inspection time in the actual inspection time-display column 342 and the defect-number-display column 343 of the expected/result-display window 340 so that the operator can make comparison with what have been expected.
  • the inspection result-display window 320 shown in FIG. 8 is configured to display a list of the results of the trial inspections repeated several times while the inspection conditions are changed including the current trial inspection result in association with the irradiation time T d per pixel, the charge accumulation-waiting time T, and the number of defects detected for each trial inspection.
  • FIG. 11 is an example of the result of the trial inspections repeated several times while the inspection conditions are changed, the result displayed in the form of a graph in the inspection result-display window based on a relationship between the charge accumulation-waiting time T or the beam irradiation time T d and the number of defects.
  • FIG. 12 is an example of the result of the trial inspections repeated several times while the inspection conditions are changed, the result displayed in the form of a graph in the inspection result-display window based on a relationship between the sampling frequency f and the number of defects.
  • the graph displayed based on the relationship between the charge accumulation-waiting time T or the beam irradiation time T d and the number of defects shown in FIG. 11 can facilitate visual comparison of the number of defects corresponding to each charge accumulation-waiting time T or each beam irradiation time T d .
  • the operator easily derives the charge accumulation-waiting time T and the beam irradiation time T d as the optimum inspection conditions.
  • the operator easily derives the charge accumulation-waiting time T and the beam irradiation time T d as the optimum inspection conditions.
  • Step S 06 If it is not necessary to conduct the trial inspection by resetting the values of the inspection parameters such as the charge accumulation-waiting time T (Step S 06 ), the operator derives the optimum inspection conditions as described above, while referring to the result of the trial inspections repeated several times while the inspection conditions are changed, the result displayed in the inspection result-display window 320 (Step S 07 ). In the example shown in FIGS.
  • the operator can easily derive as the optimum inspection conditions the combination of the beam irradiation time T d of 10 [usec] and the charge accumulation-waiting time T of 10 [nsec] where the beam irradiation time T d and the charge accumulation-waiting time T, particularly the charge accumulation-waiting time T, are not relatively longer than those in the other trial inspection results, and a larger number (600) of the defect portions 112 were successfully detected than those under the other inspection conditions (Step S 07 ).
  • the operator operates the input instrument 15 to set the derived beam irradiation time T d and charge accumulation-waiting time T as the inspection conditions to the irradiation time-setting column 332 and the charge accumulation-waiting time-setting column 331 in the inspection condition-setting window 330 of the inspection starting screen 300 (Step S 08 ).
  • the computer 13 can automatically set the corresponding beam irradiation time T d and charge accumulation-waiting time T to the irradiation time-setting column 332 and the charge accumulation-waiting time-setting column 331 in the inspection condition-setting window 330 .
  • the above-described process from Steps 1 to 8 may be automatically sequenced as follows, in a case, for example, where inspection parameters to be changed are determined in advance by a recipe or the like.
  • the computer 13 conducts while controlling some trial inspections with the values of the inspection parameters being changed on the basis of the default values.
  • the computer 13 determines and sets the optimum inspection conditions as the inspection conditions on the basis of the result of each trial inspection.
  • the operator operates an input device of the input instrument 15 to designate the inspection region 313 on the wafer map 312 displayed in the wafer map-display section 311 of the inspection region-selection window 310 .
  • the designated inspection region 313 is set as an inspection region 313 in the main inspection (Step S 09 ).
  • the computer 13 computes expected inspection time for this inspection region 313 in the main inspection, and displays the expected inspection time in place of that in the trial inspection in the expected inspection time-display column 341 of the expected/result-display window 340 .
  • the displays of the actual inspection time-display column 342 and the defect-number-display column 343 of the wafer map-display section 311 are reset for preparation to start the main inspection (Step S 10 ).
  • Step S 10 when the inspection region 313 in the main inspection is set in Step S 09 , the expected inspection time for the inspection region 313 thus set in the main inspection, that is, an inspection throughput T th of the main inspection is computed in Step S 10 .
  • the computer 13 computes the inspection throughput T th of the main inspection, for example, as described below.
  • the inspection throughput of the main inspection is obtained by a relationship formula represented by a formula (10) where S [nm 2 ] is an area of the inspection region 313 thus set in the main inspection, T L [sec] is net time for irradiation with one scanning line (one line) of the electron beam 21 , p [nm] is a size of an inspected pixel, and L nm is a length of one scanning linewidth (one linewidth).
  • the net time T L [sec] for irradiation with one scanning line (one line) of the electron beam 21 relates to the charge accumulation-waiting time T.
  • the net time T L [sec] for irradiation with one line of the electron beam 21 can be represented by a formula (11).
  • the charge accumulation-waiting time T is determined by a value set under the conditions of the equations of the formulas (3) to (8).
  • the formulas (10) and (11) indicate that the charge accumulation-waiting time T and the inspection time T th have a proportional relationship. This means that as the charge accumulation-waiting time T simply increases, the inspection time T th for the inspection region 313 in the main inspection slows down.
  • Step S 11 After checking the expected inspection time for the main inspection displayed in the expected inspection time-display column 341 of the expected/result-display window 34 in Step 10 , if the operator would like to further improve the throughput, the operator changes the optimum inspection conditions determined in Step 8 (Step S 11 ).
  • the operator repeats the process from Steps 8 to 11 until it is checked that all of the charge accumulation-waiting time T and the beam irradiation time T d set as the optimum inspection conditions based on the trial inspection, the number of defects detected in the trial inspection, and the expected inspection time for the main inspection under these optimum inspection conditions are optimum conditions. Then, the operator adjusts the charge accumulation-waiting time T and the beam irradiation time T d set as the optimum inspection conditions, and the size (area) of the inspection region 313 for the main inspection.
  • the operator operates the main inspection-start button 336 of the inspection condition-setting window 330 to start the main inspection on the inspection region 313 (Step S 12 ).
  • the above-described process from Steps 8 to 11 may be automatically sequenced as follows, in a case, for example, where the maximum acceptable inspection time and the size of the inspection region are determined in advance by a recipe or the like.
  • the computer 13 determines and sets the optimum inspection conditions as the inspection conditions while changing the values of the inspection parameters on the basis of the default values.
  • the computer 13 can execute automatically all of the inspection condition-setting process shown in FIG. 9 in cooperation with each component of the device.
  • the inspection condition-setting process in the SEM-type visual inspection device 1 according to the present embodiment has been described based on the inspection parameter-input screen 200 shown in FIG. 7 and the inspection starting screen 300 shown in FIG. 8 . Nevertheless, the inspection condition-setting process shown in FIG. 9 is not restricted to the method based on the inspection parameter-input screen 200 and the inspection starting screen 300 described above. Various changes are possible, as long as the optimum inspection conditions for the main inspection are set based on the result of the trial inspection.
  • FIGS. 13 and 14 are configuration diagrams of examples of an SEM-type visual inspection device according to the present embodiment, the SEM-type visual inspection device including at least two or more electron gun for electron beam irradiation.
  • both SEM-type visual inspection devices 1 ′, 1 ′′ in any examples include at least one or more first electron guns 53 for irradiating the observation sample 100 with an electron beam 51 from an electron source 52 to control the charged state of the observation sample 100 , and also include a second electron gun 3 for irradiating the observation sample 100 with the electron beam 21 from the electron source 2 to form a microscope image with the emitted electron 22 from the observation sample 100 .
  • the irradiation site of the electron beam 51 from the first electron gun 53 is different from the irradiation site of the electron beam 21 from the second electron gun 3 .
  • the observation sample 100 placed on the sample stage 7 is configured to be movable between the irradiation site of the electron beam 51 from the first electron gun 53 and the irradiation site of the electron beam 21 from the second electron gun 3 by driving the sample stage 7 .
  • the observation sample 100 can be irradiated with either the electron beam 51 from the first electron gun 53 or the electron beam 21 from the second electron gun 3 , depending on a position where the sample stage 7 is driven.
  • the SEM-type visual inspection device 1 ′′ shown in FIG. 14 is configured such that the irradiation site of the electron beam 51 from the first electron gun 53 matches the irradiation site of the electron beam 21 from the second electron gun 3 .
  • the first electron gun 53 similarly to the second electron gun 3 , the first electron gun 53 also includes a blanking electrode 55 so as not to irradiate the observation sample 100 with the electron beam 51 .
  • the observation sample 100 can be irradiated alternatively with either the electron beam 51 or the electron beam 21 at a different timing.
  • the SEM-type visual inspection device 1 ′′ shown in FIG. 14 is configured such that the first electron gun 53 includes the blanking electrode 55 so as not to irradiate the observation sample 100 with the electron beam 51 .
  • the first electron gun 53 includes the blanking electrode 55 so as not to irradiate the observation sample 100 with the electron beam 51 .
  • an electron gun having a function of stopping electron beam emission from the electron source 52 to prevent the electron beam 51 from reaching the observation sample 100 can be used as the first electron gun 53 .
  • the way of irradiation with the electron beam 51 from the first electron gun 53 may be scanning on the observation sample 100 or surface irradiation on the observation sample 100 with a relatively large beam diameter.
  • the SEM-type visual inspection devices 1 ′, 1 ′′ are capable of controlling the “charge accumulation-waiting time T” between the initial (for example, first) charged-particle beam irradiation and the next (for example, second) charged-particle beam irradiation by using the first, second electron guns 53 , 3 .
  • the SEM-type visual inspection devices 1 ′, 1 ′′ are configured to control time between the irradiation with the electron beam 51 from the first electron gun 53 on the observation sample 100 and the irradiation with electron beam 21 from the second electron gun 3 , thereby controlling the “charge accumulation-waiting time T.”
  • a stage-driving control system 56 provided to the sample stage 7 is configured to drive and control the sample stage 7 in a way that the observation sample 100 is movable between the irradiation site of the electron beam 51 and the irradiation site of the electron beam 21 .
  • the driving configuration of the sample stage 7 may be that the sample stage 7 is moved by being continuously driven, or by step & repeat in which driving and stopping are repeated.
  • the computer 13 controls the stage moving speed of the sample stage 7 by the stage-driving control system 56 in accordance with the “charge accumulation-waiting time T” as follows.
  • the charge accumulation-waiting time T from the initial (for example, first) electron beam irradiation for enhancing charge accumulation with the first electron gun 53 on the observation sample 100 until the subsequent (for example, second) electron beam irradiation for observation with the second electron gun 3 can be represented by a formula (12) where L is a distance between an optical axis of the electron beam 51 at the irradiation site of the first electron gun 53 and an optical axis of the electron beam 21 at the irradiation site of the second electron gun 3 .
  • the charge accumulation-waiting time T can be represented by a formula (13).
  • the distance L between the optical axis of the electron beam 51 at the irradiation site of the first electron gun 53 and the optical axis of the electron beam 21 at the irradiation site of the second electron gun 3 is constant. If the stage moving speed v of the sample stage 7 and the total stopping time T s in the step & repeat can be determined, required charge accumulation-waiting time T can be obtained on a one-to-one basis.
  • the SEM-type visual inspection device 1 ′′ shown in FIG. 14 in which the irradiation site of the electron beam 51 from the first electron gun 53 matches the irradiation site of the electron beam 21 from the second electron gun 3 is configured to perform an initial (for example, first) irradiation with the electron beam 51 for enhancing charge accumulation from the first electron gun 53 , then stop this irradiation with the electron beam 51 , and perform the next (for example, second) irradiation with the electron beam 21 for observation from the second electron gun 3 .
  • the SEM-type visual inspection device 1 ′′ is configured to stop the irradiation with the electron beam 51 from the first electron gun 53 at the time of the irradiation with the electron beam 21 from the second electron gun 3 .
  • the detector 8 never detects an emitted electron generated by the irradiation with the electron beam 51 for enhancing charge accumulation from the first electron gun 53 , but only detects an emitted electron generated by the irradiation with the electron beam 21 for observation from the second electron gun 3 . Thereby, an electron microscope image is captured.
  • the irradiation with the electron beam 51 from the first electron gun 53 and the irradiation with the electron beam 21 from the second electron gun 3 are stopped, for example, by operating and controlling the blanking electrodes 55 , 5 respectively by the lens controller 11 .
  • the charge accumulation-waiting time T from the initial (for example, first) electron beam irradiation for enhancing charge accumulation with the first electron gun 53 on the observation sample 100 until the subsequent (for example, second) electron beam irradiation for observation with the second electron gun 3 can be represented by a formula (14) where T bb is time from the irradiation with the electron beam 51 for enhancing charge accumulation from the first electron gun 53 on the observation sample 100 followed by stopping of the irradiation with the electron beam 51 from the first electron gun 53 until the irradiation with the electron beam 21 for observation from the second electron gun 3 on the observation sample 100 .
  • the inspection parameters including the charge accumulation-waiting time T for emphasizing the difference in electrical properties between the normal portion 111 and the defect portion 112 in the semiconductor wafer 100 are set depending on the difference in device configuration between the SEM-type visual inspection devices 1 ′, 1 ′′: whether the irradiation site of the electron beam 51 from the first electron gun 53 is different from or matches the irradiation site of the electron beam 21 from the second electron gun 3 as follows.
  • the distance L between the optical axis of the electron beam 51 and the optical axis of the electron beam 21 at the respective irradiation sites is fixed.
  • the required charge accumulation-waiting time T is set on a one-to-one basis.
  • the required charge accumulation-waiting time T is set on a one-to-one basis.
  • the required charge accumulation-waiting time T is set on a one-to-one basis.
  • FIG. 15 is a view showing one example of the inspection parameter-input screen as one mode of the input monitor screen in the SEM-type visual inspection device of the present embodiment.
  • An inspection parameter-input screen (illustrated as an “image capturing condition-setting screen” in FIG. 15 ) 200 ′ is displayed in the window on the screen of the monitor 14 through given operation on the input instrument 15 as similarly to the inspection parameter-input screen 200 according to the first embodiment shown in FIG. 7 .
  • the inspection parameter-input screen 200 ′ includes: the charge accumulation-waiting time-input column 201 for inputting the charge accumulation-waiting time T; a stage speed-input column 221 for inputting the stage speed v when the sample stage 7 is driven in the case of the SEM-type visual inspection device 1 ′ in which the irradiation site of the electron beam 51 is different from the irradiation site of the electron beam 21 ; further a stage stopping time-input column 222 for inputting the total stopping time T s when the sample stage 7 is stopped in the case of driving the sample stage 7 by step & repeat; and also a blanking time-input column 223 for inputting the time T bb from the stopping of the irradiation with the electron beam 51 from the first electron gun 53 until the irradiation with the electron beam 21 for observation from the second electron gun 3 on the observation sample 100 in the case of the SEM-type visual inspection device 1 ′′ in which the irradiation site of the electron beam 51 matches
  • the inspection parameter-input screen 200 ′ has the setting button (OK button) 207 for setting input values of these parameters as the inspection parameters of the inspection conditions.
  • the operator inputs these inspection parameters T, v, T s , T bb as appropriate depending on the difference in hardware configuration between the SEM-type visual inspection devices 1 ′, 1 ′′ and also the difference in driving the sample stage 7 in the case of the SEM-type visual inspection device 1 ′ in which the irradiation site of the electron beam 51 is different from the irradiation site of the electron beam 21 .
  • the charge accumulation-waiting time T is inputted at first. Accordingly, depending on the value of the charge accumulation-waiting time T thus inputted, the range of selecting each value of the inspection parameters v, T s , T bb is narrowed. This means less selection choices.
  • the operator If appropriately inputting the inspection parameters T, v, T s , T bb through the inspection parameter-input screen 200 ′ as described above, the operator operates the setting button (OK button) 207 to store the inspection parameters T, v, T s , T bb thus inputted through the operation as inspection conditions temporarily in the computer 13 of the SEM-type visual inspection device 1 .
  • the computer 13 of the SEM-type visual inspection device 1 displays, in place of the inspection parameter-input screen 200 ,′ an inspection starting screen, similar to the inspection starting screen 300 according to the first embodiment shown in FIG. 8 , based on the inspection parameters T, v, T s , T bb set through the inspection parameter-input screen 200 ′ in the window on the screen of the monitor 14 .
  • the operator executes an inspection condition-setting process including a trial inspection, similar to the inspection condition-setting process according to the first embodiment shown in FIG. 9 , according to this inspection starting screen, and sets optimum inspection conditions for the main inspection on the basis of the inspection result of the trial inspection.
  • the SEM-type visual inspection devices 1 , 1 ′, 1 ′′ have been described as the embodiments of the charged-particle microscope device and the method of controlling charged-particle beams of the present invention.
  • the present invention is not restricted to the above-described embodiments, and various changes are possible within the scope of the inventions described in claims.
  • the present invention is applicable, other than the SEM-type visual inspection device 1 , to, for example, charged-particle microscope devices, such as general electron microscope devices and ion microscopes, which are configured to capture an observation image by detecting an emitted electron emitted from an observation sample by charged-particle beam irradiation.
  • the time may either start from when the initial electron beam irradiation for enhancing charge accumulation is started including the initial electron-beam irradiation time T d per pixel for enhancing charge accumulation, or start from when the initial electron beam irradiation for enhancing charge accumulation is terminated excluding the initial electron-beam irradiation time T d per pixel for enhancing charge accumulation.
  • FIG. 16 shows a modification example of the inspection parameter-input screen shown in FIG. 15 .
  • An inspection parameter-input screen 200 ′′ shown in FIG. 16 urges the operator to first input various parameters v, T s , T bb .
  • image capturing condition-setting screen urges the operator to first input various parameters v, T s , T bb .
  • the charge accumulation-waiting time T is automatically displayed.

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140061462A1 (en) * 2012-08-30 2014-03-06 Mira PARK Methods and apparatuses for inspecting semiconductor devices using electron beams
US20150076348A1 (en) * 2012-03-16 2015-03-19 Hitachi High-Technologies Corporation Charged particle beam apparatus, specimen observation system and operation program
US11043359B2 (en) 2019-08-08 2021-06-22 Hitachi High-Tech Corporation Charged particle beam apparatus and charged particle beam inspection system
US11112482B2 (en) * 2019-10-30 2021-09-07 Yangtze Memory Technologies Co., Ltd. Method for calibrating verticality of particle beam and system applied to semiconductor fabrication process
US11791132B2 (en) * 2019-03-28 2023-10-17 Asml Netherlands B.V. Aperture array with integrated current measurement
US11848173B1 (en) * 2023-01-31 2023-12-19 Integrated Dynamic Electron Solutions, Inc. Methods and systems for event modulated electron microscopy

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6067153A (en) * 1996-05-21 2000-05-23 Hitachi, Ltd. Pattern defect inspecting apparatus
US6465781B1 (en) * 1999-06-11 2002-10-15 Hitachi, Ltd. Method and apparatus for inspecting or measuring a sample based on charged-particle beam imaging, and a charged-particle beam apparatus
US6700122B2 (en) * 2001-03-23 2004-03-02 Hitachi, Ltd. Wafer inspection system and wafer inspection process using charged particle beam
US6717142B2 (en) * 1996-03-29 2004-04-06 Hitachi, Ltd. Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
US20070138390A1 (en) * 2004-04-05 2007-06-21 Hidetoshi Nishiyama Inspection method and inspection system using charged particle beam
US20090084954A1 (en) * 2007-09-27 2009-04-02 Hitachi High-Technologies Corporation Method for inspecting and measuring sample and scanning electron microscope
US7560939B1 (en) * 2006-02-17 2009-07-14 Kla-Tencor Technologies Corporation Electrical defect detection using pre-charge and sense scanning with prescribed delays
US20090206257A1 (en) * 2008-02-14 2009-08-20 Hitachi High-Technologies Corporation Pattern inspection method and inspection apparatus
US20100102225A1 (en) * 2007-06-08 2010-04-29 Keisuke Itou Charged particle beam inspection apparatus and inspection method using charged particle beam
US20100133433A1 (en) * 2006-12-27 2010-06-03 Sayaka Tanimoto Electron beam apparatus
US20100258722A1 (en) * 2009-04-08 2010-10-14 Wei Fang Charged particle beam imaging assembly and imaging method thereof
US8026481B2 (en) * 2006-02-06 2011-09-27 Hitachi High-Technologies Corporation Charged particle apparatus, scanning electron microscope, and sample inspection method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3876668B2 (ja) * 2001-09-13 2007-02-07 株式会社日立製作所 電子線を用いた外観検査装置
JP2008166635A (ja) * 2007-01-04 2008-07-17 Hitachi High-Technologies Corp 回路パターンの検査装置、および、回路パターンの検査方法
JP4997076B2 (ja) * 2007-11-22 2012-08-08 株式会社日立ハイテクノロジーズ 荷電粒子線装置、及び荷電粒子線装置における画像生成方法
JP4746659B2 (ja) * 2008-10-02 2011-08-10 株式会社日立ハイテクノロジーズ 回路パターンの検査方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6717142B2 (en) * 1996-03-29 2004-04-06 Hitachi, Ltd. Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
US6067153A (en) * 1996-05-21 2000-05-23 Hitachi, Ltd. Pattern defect inspecting apparatus
US6465781B1 (en) * 1999-06-11 2002-10-15 Hitachi, Ltd. Method and apparatus for inspecting or measuring a sample based on charged-particle beam imaging, and a charged-particle beam apparatus
US6700122B2 (en) * 2001-03-23 2004-03-02 Hitachi, Ltd. Wafer inspection system and wafer inspection process using charged particle beam
US20070138390A1 (en) * 2004-04-05 2007-06-21 Hidetoshi Nishiyama Inspection method and inspection system using charged particle beam
US8026481B2 (en) * 2006-02-06 2011-09-27 Hitachi High-Technologies Corporation Charged particle apparatus, scanning electron microscope, and sample inspection method
US7560939B1 (en) * 2006-02-17 2009-07-14 Kla-Tencor Technologies Corporation Electrical defect detection using pre-charge and sense scanning with prescribed delays
US20100133433A1 (en) * 2006-12-27 2010-06-03 Sayaka Tanimoto Electron beam apparatus
US20100102225A1 (en) * 2007-06-08 2010-04-29 Keisuke Itou Charged particle beam inspection apparatus and inspection method using charged particle beam
US20090084954A1 (en) * 2007-09-27 2009-04-02 Hitachi High-Technologies Corporation Method for inspecting and measuring sample and scanning electron microscope
US20090206257A1 (en) * 2008-02-14 2009-08-20 Hitachi High-Technologies Corporation Pattern inspection method and inspection apparatus
US20100258722A1 (en) * 2009-04-08 2010-10-14 Wei Fang Charged particle beam imaging assembly and imaging method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150076348A1 (en) * 2012-03-16 2015-03-19 Hitachi High-Technologies Corporation Charged particle beam apparatus, specimen observation system and operation program
US9443694B2 (en) * 2012-03-16 2016-09-13 Hitachi High-Technologies Corporation Charged particle beam apparatus, specimen observation system and operation program
US10020163B2 (en) 2012-03-16 2018-07-10 Hitachi High-Technologies Corporation Charged particle beam apparatus, specimen observation system and operation program
US20140061462A1 (en) * 2012-08-30 2014-03-06 Mira PARK Methods and apparatuses for inspecting semiconductor devices using electron beams
US9267903B2 (en) * 2012-08-30 2016-02-23 Samsung Electronics Co., Ltd. Methods and apparatuses for inspecting semiconductor devices using electron beams
US11791132B2 (en) * 2019-03-28 2023-10-17 Asml Netherlands B.V. Aperture array with integrated current measurement
US11043359B2 (en) 2019-08-08 2021-06-22 Hitachi High-Tech Corporation Charged particle beam apparatus and charged particle beam inspection system
TWI738405B (zh) * 2019-08-08 2021-09-01 日商日立全球先端科技股份有限公司 帶電粒子線裝置及帶電粒子線檢查系統
US11112482B2 (en) * 2019-10-30 2021-09-07 Yangtze Memory Technologies Co., Ltd. Method for calibrating verticality of particle beam and system applied to semiconductor fabrication process
US11848173B1 (en) * 2023-01-31 2023-12-19 Integrated Dynamic Electron Solutions, Inc. Methods and systems for event modulated electron microscopy

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