US20110290380A1 - Method for manufacturing metal laminated substrate for semiconductor element formation and metal laminated substrate for semiconductor element formation - Google Patents

Method for manufacturing metal laminated substrate for semiconductor element formation and metal laminated substrate for semiconductor element formation Download PDF

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US20110290380A1
US20110290380A1 US13/127,905 US200913127905A US2011290380A1 US 20110290380 A1 US20110290380 A1 US 20110290380A1 US 200913127905 A US200913127905 A US 200913127905A US 2011290380 A1 US2011290380 A1 US 2011290380A1
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metal
laminated substrate
semiconductor element
foil
manufacturing
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Hironao Okayama
Akira Kaneko
Kouji Nanbu
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Toyo Kohan Co Ltd
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Toyo Kohan Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21B—ROLLING OF METAL
    • B21B47/00—Auxiliary arrangements, devices or methods in connection with rolling of multi-layer sheets of metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/013—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium
    • B32B15/015—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium the said other metal being copper or nickel or an alloy thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/02—Ferrous alloys, e.g. steel alloys containing silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/18—Ferrous alloys, e.g. steel alloys containing chromium
    • C22C38/40—Ferrous alloys, e.g. steel alloys containing chromium with nickel
    • C22C38/44—Ferrous alloys, e.g. steel alloys containing chromium with nickel with molybdenum or tungsten
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/18—Ferrous alloys, e.g. steel alloys containing chromium
    • C22C38/40—Ferrous alloys, e.g. steel alloys containing chromium with nickel
    • C22C38/58—Ferrous alloys, e.g. steel alloys containing chromium with nickel with more than 1.5% by weight of manganese
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0393—Flexible materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a method of manufacturing a metal laminated substrate for forming an epitaxial growth film for forming a semiconductor element, and a metal laminated substrate for forming an epitaxial growth film for forming a semiconductor element.
  • a monocrystalline wafer made of monocrystalline silicon (Si), monocrystalline GaAs, monocrystalline sapphire (Al 2 O 3 ) or the like having an excellent crystal orientation has been used as a substrate for an epitaxial growth film.
  • the monocrystalline wafer made of these materials is a cut plate having a size of approximately 300 mm ⁇ at most, and such a monocrystalline wafer cannot be formed by a continuous manufacturing method such as a reel-to-reel method. Further, also the strength of Si or the like is small and hence, the handling of the monocrystalline wafer made of Si or the like during the conveyance of the wafer is not easy whereby the careful handling of the wafer is necessary.
  • a metal substrate having the high biaxial crystal orientation which is formed such that cold rolling is applied to Ni, Cu, Ag or an alloy of these materials at a rolling reduction of not less than 90% thus imparting a uniform strain to the whole material and, thereafter, the material is recrystallized.
  • the substrate is provided in the form of a crystal-oriented metal tape having a narrow width of 4 to 10 mm, and there has been no substrate which is provided as a wide and long substrate with high crystal orientation.
  • the above-mentioned Ni—W alloy has drawbacks that the Ni—W alloy is not a material which is used popularly in general so that a cost of the Ni—W alloy is high, the Ni—W alloy exhibits poor workability so that the manufacture of the substrate having a large width becomes difficult.
  • patent documents 1, 2 and 3 as a material for forming a metal substrate which can overcome drawbacks in securing strength, there has been proposed a clad material which is formed by laminating a metal core layer and an Ni alloy layer by cold drawing or by a cold rolling method (patent documents 1, 2, 3).
  • materials to be bonded constrain each other on a bonding interface so that rolling is performed while causing the non-uniform deformation of the clad material whereby the uniform strain cannot be induced in the thickness direction.
  • the degree of roughness of the bonding interface is also increased so that the thickness of the Ni layer in which crystals are oriented also becomes non-uniform. Accordingly, in the heat treatment after bonding, the stable manufacture of the substrate having the uniform and high crystal orientation in the longitudinal direction becomes difficult.
  • a method of manufacturing a metal laminated substrate for forming a semiconductor element according to the present invention includes the steps of: activating at least one surface of a metal plate; activating at least one surface of a metal foil made of Cu or a Cu alloy which is cold-rolled at a rolling reduction of 90% or more; laminating the metal plate and the metal foil such that an activated surface of the metal plate and an activated surface of the metal foil face each other in an opposed manner and applying cold rolling to the metal plate and the metal foil which are laminated to each other; and biaxially orienting crystals of the metal foil by heat treatment.
  • the method of manufacturing a metal laminated substrate for forming a semiconductor element according to the present invention is, in the above-mentioned (1), characterized in that the activation treatment is performed by sputter etching.
  • the method of manufacturing a metal laminated substrate for forming a semiconductor element according to the present invention is, in the above-mentioned (1) or (2), characterized in that the cold rolling is performed at a rolling reduction of not more than 10% at the time of lamination.
  • the method of manufacturing a metal laminated substrate for forming a semiconductor element according to the present invention is, in any one of the above-mentioned (1) to (3), characterized in that the metal foil made of Cu or the Cu alloy has a thickness of not less than 7 ⁇ m and not more than 50 ⁇ m.
  • the method of manufacturing a metal laminated substrate for forming a semiconductor element according to the present invention is, in any one of the above-mentioned (1) to (4), characterized in that the metal foil made of the Cu alloy contains not less than 0.01% and not more than 1% of Ag, Sn, Zn, Zr, O and N in total.
  • the method of manufacturing a metal laminated substrate for forming a semiconductor element according to the present invention is, in any one of the above-mentioned (1) to (5), characterized in that the heat treatment after the lamination is performed at a temperature of not lower than 150° C. and not higher than 1000° C.
  • the method of manufacturing a metal laminated substrate for forming a semiconductor element according to the present invention is, in any one of the above-mentioned (1) to (6), characterized in that before the heat treatment, a polish treatment is applied to the metal plate such that the surface roughness of a metal-foil-side surface of the metal plate becomes not less than 1 nm and not more than 40 nm by Ra.
  • the method of manufacturing a metal laminated substrate for forming a semiconductor element according to the present invention is, in any one of the above-mentioned (1) to (7), characterized in that a protective film having a thickness of not less than 1 nm and not more than 10 ⁇ m is further formed on the metal laminated substrate which is manufactured by the method of manufacturing a metal laminated substrate.
  • a metal laminated substrate for forming a semiconductor element according to the present invention is manufactured by any one of the manufacturing method described in (1) to (8).
  • a metal plate and a Cu alloy foil rolled at a high rolling reduction for obtaining a metal crystal orientation surface which are manufactured with high thickness accuracy respectively in advance can be laminated to each other at a low rolling reduction with high accuracy and with a smooth interface.
  • the metal laminated substrate for forming semiconductor element which is manufactured by this manufacturing method can possess a high-accuracy biaxial crystal orientation on a surface of the substrate and hence, the semiconductor element can be formed on the substrate by an epitaxial growth with high accuracy.
  • FIG. 1 is a schematic cross-sectional view showing the constitution of a metal laminated substrate 5 A which is provided with a biaxially-crystal-oriented metal foil obtained by a manufacturing method of the present invention.
  • the metal laminated substrate 5 A obtained using the manufacturing method of the present invention is constituted of a metal plate T 1 and a metal foil T 2 which is laminated to the metal plate T 1 .
  • the metal plate T 1 is selected depending on a purpose of use.
  • the metal plate T 1 is a metal plate for a solar cell on which a polycrystalline silicon film is grown epitaxially, since it is necessary to impart proper strength to the metal plate T 1 , a thin plate made of Fe, Al, Ni, Cr, Ag, Cu, W, or an alloy of these materials (stainless steel, for example) is given as an example.
  • a thickness of the metal plate T 1 is not less than 0.05 mm and not more than 0.2 mm.
  • the reason the thickness of the metal plate T 1 is set to not less than 0.05 mm is to secure strength of the metal plate T 1 , and the reason the thickness of the metal plate T 1 is set to not more than 0.2 mm is to secure workability.
  • the metal foil T 2 As the metal foil T 2 , a Cu foil or a Cu alloy foil (both the Cu foil and the Cu alloy foil also referred to as a Cu alloy foil in this specification) are given as examples.
  • the metal foil T 2 is required to possess the high crystal orientation in a state where a metal laminated substrate is formed.
  • Such a high-reduction rolled Cu alloy foil having the rolled texture formed by heavy working at a rolling reduction of not less than 90% has been developed for imparting high bending property to the foil aiming at the use in a flexible printed circuit board, has become widespread, and can be easily obtained.
  • a high-reduction rolled Cu foil product name: HA foil
  • a high-reduction rolled Cu foil product name: HX foil
  • Hitachi Electric Wires., Ltd and the like are given as examples.
  • the metal foil having a thickness of not less than 7 ⁇ m and not more than 50 ⁇ m It is desirable to use the metal foil having a thickness of not less than 7 ⁇ m and not more than 50 ⁇ m, and it is more desirable to use the metal foil having a thickness of not less than 12 ⁇ m and not more than 14 ⁇ m.
  • the reason the thickness of the metal foil is set to not less than 7 ⁇ m is to secure strength of the metal foil T 2
  • the reason the thickness of the metal foil is set to not more than 50 ⁇ m is to secure workability of the metal foil T 2 .
  • any element may be used as an element to be added to the Cu alloy foil provided that the element allows the Cu alloy foil to easily elevate a (200) surface crystal rate to not less than 99% by heat treatment, trace amounts of Ag, Sn, Zn, Zr, O, N are added to the Cu alloy foil respectively, wherein a total amount of these elements is set to not more than 1%.
  • the reason the total amount of elements to be added is set to not more than 1% is that although the elements to be added and Cu form a solid solution, when the total amount of elements to be added exceeds 1%, there exists a possibility that impurities such as oxides other than solid solution are increased and the impurities influence the orientation.
  • the total amount of elements to be added is not less than 0.01% and not more than 0.1%.
  • the metal plate and the Cu alloy foil formed by cold rolling at a rolling reduction of 90% or more which are explained heretofore are laminated to each other by a surface activation bonding method.
  • the surface activation bonding means that surfaces of a substrate to be laminated and a metal foil to be laminated are activated by removing oxide, dirt and the like on the surfaces using a method such as sputter etching, the activated surfaces are brought into contact with each other and the laminate is subjected to cold rolling.
  • An intermediate layer may be provided to the surface of the substrate by sputtering.
  • a vacuum surface activation bonding device D 1 shown in FIG. 4 can be used.
  • a metal plate L 1 and a metal foil L 2 which becomes a Cu alloy foil are prepared as elongated coils having a width of 150 mm to 600 mm, and are mounted on recoiler portions S 1 , S 2 of the surface activation bonding device D 1 .
  • the metal plate L 1 and the metal foil L 2 which are conveyed from the recoiler portions S 1 , S 2 are continuously conveyed to a surface activation treatment step where activation treatment is applied to two surfaces to be bonded in advance and, thereafter, the metal plate L 1 and the metal foil L 2 are brought into pressure contact with each other by cold rolling.
  • the surface activation treatment is performed by sputter etching treatment in an extremely-low-pressure inert gas atmosphere of 10 to 1 ⁇ 10 ⁇ 2 Pa, wherein the metal plate L 1 and the metal foil L 2 having bonding surfaces are used as one electrodes A (S 3 ) which are connected to a ground respectively, a glow discharge is generated by applying an AC current of 1 to 50 MHz between one electrodes A and the other electrodes B (S 4 ) which are supported in an insulated manner, and an area of the electrode which is exposed in plasma generated by the glow discharge is not more than 1 ⁇ 3 of an area of the electrodes B.
  • argon As an inert gas, argon, neon, xenon, krypton or a mixture gas containing at least one kind selected from a group consisting of these gases is applicable.
  • the sputter etching treatment surfaces of the metal plate L 1 and the metal foil L 2 which are bonded to each other are subjected to sputtering by an inert gas so that surface adsorption layers and surface oxide films are removed whereby the bonding surfaces are activated.
  • the electrodes A(S 3 ) take the form of cooling rolls thus preventing the elevation of temperatures of respective materials to be conveyed.
  • the metal plate L 1 and the metal foil L 2 are continuously conveyed to a pressure bonding roll step (S 5 ) so that the activated surfaces are pressure-bonded to each other.
  • a pressure bonding roll step (S 5 ) so that the activated surfaces are pressure-bonded to each other.
  • the pressure bonding atmosphere influences the close contact between the metal plate L 1 and the metal foil L 2 . Accordingly, it is desirable to perform the pressure bonding roll step (S 5 ) under a high vacuum of 1 ⁇ 10 ⁇ 3 Pa or less.
  • the lower a rolling reduction the more excellent the accuracy in thickness becomes and hence, it is preferable to set the rolling reduction to not more than 10% for preventing the collapse of a state of the metal foil, and it is more preferable to set the rolling reduction to not more than 2%.
  • a laminated body formed by hermetically bonding the metal plate L 1 and the metal foil L 2 to each other through the above-mentioned pressure bonding step is conveyed to a winding step (S 6 ), and is wound in the step.
  • heat treatment is applied to the laminated body so as to highly orient crystal of the high-reduction rolled Cu alloy foil.
  • a heat treatment temperature to a temperature of not lower than 150° C.
  • a soaking time may preferably be set to 3 to 5 minutes, and when the heat treatment is performed using a continuous annealing furnace, a soaking time may be set to approximately 10 seconds.
  • the heat treatment temperature is set to an excessively high temperature, the secondary recrystallization is liable to occur in the rolled Cu alloy foil so that the crystal orientation is deteriorated. Accordingly, the heat treatment is performed with the heat treatment temperature of not lower than 150° C. and not higher than 1000° C.
  • the metal laminated substrate having high biaxial crystal orientation can be manufactured.
  • various kinds of epitaxial growth films T 3 made of a semiconductor compound such as a solar-cell-use polycrystalline silicon (Si) film, a light-emitting-diode-use gallium nitride (GaN) film, a TiO 2 film by which a photocatalytic effect and a photoelectric effect can be expected may be grown thus forming a semiconductor element.
  • a semiconductor compound such as a solar-cell-use polycrystalline silicon (Si) film, a light-emitting-diode-use gallium nitride (GaN) film, a TiO 2 film by which a photocatalytic effect and a photoelectric effect can be expected
  • a Cu alloy foil reacts with a film forming gas depending on a film forming condition so that an epitaxial growth film having excellent adhesiveness cannot be formed on the Cu alloy foil or the epitaxial growth is not generated.
  • the protective film T 4 may be made of metal such as Ni, Mo which exhibits excellent high-temperature corrosion resistance, an oxide made of an insulation material such as MgO or ZnO, or a nitride such as AIN or InGaN.
  • a thickness of the protective film T 4 is preferably set to not less than 0.5 ⁇ m to prevent the dispersion of Cu which is a background material. Further, to form a film used for other purpose on the protective film by an epitaxial growth, it is also necessary to form the protective film by an epitaxial growth and hence, it is preferable to set a thickness of the protective film to not more than 10 ⁇ m. This is because when the thickness of the protective film becomes more than 10 ⁇ m, the crystal orientation of the protective film is lowered.
  • an InGaN layer or a ZnO layer is formed on the Cu alloy foil T 2 as the protective film T 4 , and a GaN film can be formed on the protective film T 4 .
  • a known means such as an electrolytic plating method, a non-electrolytic plating method, a vacuum vapor deposition method or a sputtering film forming method can be used.
  • the rolling reduction using pressure rolls, buffing, electrolytic polishing, electrolytic abrasive grain polishing and the like are considered.
  • any method can be used.
  • it is desirable to set the surface roughness to a mirror surface level by taking a currently available technique and an economic aspect into consideration, it is desirable to set the surface roughness Ra to not less than 1 nm and not more than 10 nm.
  • the Cu metal foil can be laminated to the metal substrate with an interface formed between the Cu metal foil and the metal substrate made smooth while maintaining a state where the metal foil is cold-rolled at a high rolling reduction. This is because, in biaxially orienting crystals of the metal foil by heating after such cold rolling, when a state where the Cu metal foil is cold-rolled at a high rolling reduction is not maintained, required biaxial crystal orientation is not generated. Further, when the interface is not smooth, there exists a possibility that the biaxial crystal orientation collapses.
  • the metal foil can be laminated to the metal substrate with favorable adhesiveness. It may be possible to laminate the metal foil on the metal substrate with favorable adhesiveness using an adhesive agent. In this case, however, there exists a possibility that the adhesive agent is deteriorated or modified due to heating after lamination leading to the collapse of the biaxial crystal orientation.
  • a high-reduction rolled Cu foil (metal foil) having a width of 200 mm and a thickness of 18 ⁇ m and an SUS316L plate (metal plate) having a thickness of 100 ⁇ m are bonded to each other by a room-temperature surface activation bonding method and, thereafter, the high-reduction rolled Cu foil and the SUS316L plate are subjected to heat treatment at a temperature of 200° C. to 1000° C. for five minutes thus acquiring the metal laminated substrate.
  • a crystal orientation rate a diffraction peak strength rate of a (200) surface at a ⁇ /2 ⁇ diffraction peak measured by X-ray diffraction: I (200) / ⁇ I (hkl) ⁇ 100(%)
  • a ⁇ ° ( ⁇ scan peak an average value of half value
  • peak strength rates when the heat treatment is performed at a temperature of 130° C. and 1050° C. are also shown. Also as a comparison example, shown is a peak strength rate when a high-reduction rolled Ni foil having a thickness of 30 ⁇ m is bonded instead of the Cu foil by the above-mentioned room-temperature activation bonding method and, thereafter, heat treatment is applied to the high-reduction rolled Ni foil at a temperature of 1000° C. for 1 hour.
  • the crystal orientation rate is 93% when the heat treatment is performed at a heat treatment temperature of 130° C. for 5 minutes and hence, the crystal orientation rate is not sufficient yet.
  • the heat treatment temperature falls within a range from 200° C. to 1000° C.
  • the (200) surface crystal orientation rate becomes 99% or more when such heat treatment temperature is held for 5 minutes.
  • the recrystallization temperature is around 700° C. and the strength rate is 98% even with the heat treatment at a temperature of 1000° C. which is considered as the optimum heat treatment temperature whereby the strength rate does not reach 99% and ⁇ is also 15.4°.
  • the measured value described above is an average of values measured at three points consisting of areas in the vicinity of both ends of the plate and the center of the plate having a size of 200 mm in the widthwise direction, and no difference is substantially recognized with respect to the value among the embodiments.
  • the metal laminated substrates which are manufactured by the manufacturing method of the present invention can be manufactured as an elongated coil having a large width while maintaining the uniform crystal orientation and hence, the metal laminated substrates can be used as substrates for various epitaxial growth films.
  • the present invention it is possible to provide a metal laminated substrate constituted of an elongated coil which can be continuously formed by a reel-to-reel method, and a crystal-oriented polycrystalline silicon film for a solar cell or a semiconductor compound such as a GaN element for a light emitting diode are formed on the metal laminated substrate as an epitaxial growth film. Accordingly, the metal laminated substrate can be used as a new material for an epitaxial growth film in new fields where the utilization of the metal laminated substrate has not been studied and hence, the present invention is industrially extremely useful.
  • FIG. 1 A first figure.
  • a schematic view of a surface activation bonding device D 1 used in the present invention is shown in FIG. 1 .

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140290565A1 (en) * 2011-10-24 2014-10-02 Src Corporation Method of manufacturing graphene using metal catalyst
US20150001519A1 (en) * 2012-02-07 2015-01-01 Mitsui Mining & Smelting Co., Ltd. Electrode Foil and Electronic Device
US20150107884A1 (en) * 2012-04-11 2015-04-23 Kabushiki Kaisha Nihon Micronics Multi-layer wiring board and process for manufcturing the same
US10253409B2 (en) 2014-04-23 2019-04-09 Src Corporation Method of manufacturing graphene using metal catalyst
US11524486B2 (en) 2015-10-23 2022-12-13 Toyo Kohan Co., Ltd. Substrate for epitaxtail, growth and method for producing same
US20220411955A1 (en) * 2021-06-24 2022-12-29 Instytut Wysokich Cisnien Polskiej Akademii Nauk Method for reducing a lateral growth of crystals
US11999131B2 (en) 2018-03-14 2024-06-04 Toyo Kohan Co., Ltd. Roll-bonded laminate and method for producing the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101669087B1 (ko) 2011-07-29 2016-10-25 후루카와 덴키 고교 가부시키가이샤 전해 동합금박, 그 제조 방법, 그것의 제조에 이용하는 전해액, 그것을 이용한 2차 전지용 음극 집전체, 2차 전지 및 그 전극
JP5246526B1 (ja) * 2012-02-17 2013-07-24 日立電線株式会社 圧延銅箔
JP6570146B2 (ja) 2014-10-09 2019-09-04 マテリオン コーポレイション 冶金学的ボンドおよび密度低減金属コア層を有する金属積層体ならびにその製造方法
JP6621353B2 (ja) * 2016-03-25 2019-12-18 デンカ株式会社 耐熱性セラミックス回路基板
WO2019176937A1 (fr) * 2018-03-14 2019-09-19 東洋鋼鈑株式会社 Corps colaminé et son procédé de production
JP7141276B2 (ja) * 2018-08-09 2022-09-22 デクセリアルズ株式会社 スパッタリングターゲット

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6312834B1 (en) * 1998-06-03 2001-11-06 Sumitomo Special Metals Co., Ltd. Clad material and method of manufacturing the material
US7175919B2 (en) * 2000-10-18 2007-02-13 Toyo Kohan Co., Ltd. Multilayered metal laminate and process for producing the same
US20080118730A1 (en) * 2006-11-22 2008-05-22 Ta-Hua Yu Biaxially oriented film, laminates made therefrom, and method
US7563408B2 (en) * 2004-08-30 2009-07-21 Dowa Metaltech Co., Ltd. Copper alloy and method of manufacturing the same
JP2011108592A (ja) * 2009-11-20 2011-06-02 Toyo Kohan Co Ltd 超電導化合物用基板及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3366169B2 (ja) * 1995-11-29 2003-01-14 株式会社リコー 多結晶シリコン薄膜積層体、シリコン薄膜太陽電池および薄膜トランジスタ
JP2000357660A (ja) * 1999-06-15 2000-12-26 Sharp Corp 多結晶シリコン膜を備えた基板及びその形成方法、並びに該膜を用いた太陽電池
JP4316070B2 (ja) 1999-10-07 2009-08-19 古河電気工業株式会社 高強度配向多結晶金属基板および酸化物超電導線材
JP4794886B2 (ja) 2005-03-31 2011-10-19 古河電気工業株式会社 酸化物超電導用高強度多結晶金属基板とそれを用いた酸化物超電導線材
JP4716324B2 (ja) 2005-12-26 2011-07-06 古河電気工業株式会社 超電導体用基材およびその製造方法
JP5074083B2 (ja) * 2007-04-17 2012-11-14 中部電力株式会社 エピタキシャル薄膜形成用のクラッド配向金属基板及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6312834B1 (en) * 1998-06-03 2001-11-06 Sumitomo Special Metals Co., Ltd. Clad material and method of manufacturing the material
US7175919B2 (en) * 2000-10-18 2007-02-13 Toyo Kohan Co., Ltd. Multilayered metal laminate and process for producing the same
US7563408B2 (en) * 2004-08-30 2009-07-21 Dowa Metaltech Co., Ltd. Copper alloy and method of manufacturing the same
US20080118730A1 (en) * 2006-11-22 2008-05-22 Ta-Hua Yu Biaxially oriented film, laminates made therefrom, and method
JP2011108592A (ja) * 2009-11-20 2011-06-02 Toyo Kohan Co Ltd 超電導化合物用基板及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Machine Translation of JP 2011-108592 (published 06-2011) *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140290565A1 (en) * 2011-10-24 2014-10-02 Src Corporation Method of manufacturing graphene using metal catalyst
US9776875B2 (en) * 2011-10-24 2017-10-03 Src Corporation Method of manufacturing graphene using metal catalyst
US20150001519A1 (en) * 2012-02-07 2015-01-01 Mitsui Mining & Smelting Co., Ltd. Electrode Foil and Electronic Device
US20150107884A1 (en) * 2012-04-11 2015-04-23 Kabushiki Kaisha Nihon Micronics Multi-layer wiring board and process for manufcturing the same
US9622344B2 (en) * 2012-04-11 2017-04-11 Kabushiki Kaisha Nihon Micronics Multilayer wiring board with enclosed Ur-variant dual conductive layer
US10253409B2 (en) 2014-04-23 2019-04-09 Src Corporation Method of manufacturing graphene using metal catalyst
US11524486B2 (en) 2015-10-23 2022-12-13 Toyo Kohan Co., Ltd. Substrate for epitaxtail, growth and method for producing same
US11999131B2 (en) 2018-03-14 2024-06-04 Toyo Kohan Co., Ltd. Roll-bonded laminate and method for producing the same
US20220411955A1 (en) * 2021-06-24 2022-12-29 Instytut Wysokich Cisnien Polskiej Akademii Nauk Method for reducing a lateral growth of crystals
US11821108B2 (en) * 2021-06-24 2023-11-21 Instytut Wysokich Cisnien Polskiej Akademii Nauk Method for reducing lateral growth of GaN crystals in an ammonothermal crystal growing process

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EP2360715A1 (fr) 2011-08-24
JP5508280B2 (ja) 2014-05-28
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WO2010055612A1 (fr) 2010-05-20
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