US20110186892A1 - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
US20110186892A1
US20110186892A1 US13/014,080 US201113014080A US2011186892A1 US 20110186892 A1 US20110186892 A1 US 20110186892A1 US 201113014080 A US201113014080 A US 201113014080A US 2011186892 A1 US2011186892 A1 US 2011186892A1
Authority
US
United States
Prior art keywords
layer
light emitting
emitting device
contact
conductive semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/014,080
Other languages
English (en)
Inventor
Hwan Hee Jeong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Assigned to LG INNOTEK CO., LTD. reassignment LG INNOTEK CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JEONG, HWAN HEE
Publication of US20110186892A1 publication Critical patent/US20110186892A1/en
Priority to US13/453,531 priority Critical patent/US8450762B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
US13/014,080 2010-02-04 2011-01-26 Light emitting device Abandoned US20110186892A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/453,531 US8450762B2 (en) 2010-02-04 2012-04-23 Light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20100010246A KR100974787B1 (ko) 2010-02-04 2010-02-04 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR10-2010-0010246 2010-02-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/453,531 Continuation US8450762B2 (en) 2010-02-04 2012-04-23 Light emitting device

Publications (1)

Publication Number Publication Date
US20110186892A1 true US20110186892A1 (en) 2011-08-04

Family

ID=42759419

Family Applications (2)

Application Number Title Priority Date Filing Date
US13/014,080 Abandoned US20110186892A1 (en) 2010-02-04 2011-01-26 Light emitting device
US13/453,531 Active US8450762B2 (en) 2010-02-04 2012-04-23 Light emitting device

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/453,531 Active US8450762B2 (en) 2010-02-04 2012-04-23 Light emitting device

Country Status (5)

Country Link
US (2) US20110186892A1 (de)
EP (1) EP2355177B1 (de)
KR (1) KR100974787B1 (de)
CN (1) CN102148306B (de)
TW (1) TWI479693B (de)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130256739A1 (en) * 2012-03-27 2013-10-03 Nichia Corporation Vertical nitride semiconductor device and method for manufacturing same
US20130285095A1 (en) * 2012-04-26 2013-10-31 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
JP2014041999A (ja) * 2013-06-18 2014-03-06 Toshiba Corp 半導体発光素子
US20140110737A1 (en) * 2012-10-24 2014-04-24 Nichia Corporation Light emitting element
US20140209952A1 (en) * 2010-03-31 2014-07-31 Seoul Viosys Co., Ltd. High efficiency light emitting diode and method for fabricating the same
US20140217457A1 (en) * 2011-05-25 2014-08-07 Wavesquare Inc. Light-emitting element chip and manufacturing method therefor
US20160005930A1 (en) * 2013-03-26 2016-01-07 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip encapsulated with an ald layer and corresponding method of production
US20160172545A1 (en) * 2013-07-16 2016-06-16 Osram Opto Semiconductors Gmbh Optoelectronic Semiconductor Chip
US20170125642A1 (en) * 2014-06-10 2017-05-04 Lg Innotek Co., Ltd. Light-emitting device and light emitting device package having the same
US10381524B2 (en) * 2012-04-18 2019-08-13 Nichia Corporation Semiconductor light emitting element including protective film and light shielding member
US11177417B2 (en) * 2017-02-13 2021-11-16 Nichia Corporation Light emitting device including phosphor layer with protrusions and recesses and method for manufacturing same
US11942579B2 (en) 2017-02-13 2024-03-26 Nichia Corporation Light emitting device and adaptive driving beam headlamp

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101114191B1 (ko) 2010-09-17 2012-03-13 엘지이노텍 주식회사 발광소자
JP4989773B1 (ja) 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
KR101826979B1 (ko) 2011-06-23 2018-02-07 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
KR101830144B1 (ko) * 2011-10-26 2018-02-20 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
JP2013140942A (ja) * 2011-12-07 2013-07-18 Toshiba Corp 半導体発光装置
KR101974153B1 (ko) * 2012-06-12 2019-04-30 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 조명 시스템
KR101886156B1 (ko) * 2012-08-21 2018-09-11 엘지이노텍 주식회사 발광소자
JP5814968B2 (ja) * 2013-03-22 2015-11-17 株式会社東芝 窒化物半導体発光装置
TWI572063B (zh) * 2013-10-14 2017-02-21 新世紀光電股份有限公司 發光二極體封裝結構
DE102014108373A1 (de) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR101888608B1 (ko) * 2014-10-17 2018-09-20 엘지이노텍 주식회사 발광 소자 패키지 및 조명 장치
KR102353570B1 (ko) * 2015-08-24 2022-01-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 구비한 발광 소자 패키지
US20230103358A1 (en) * 2020-03-26 2023-04-06 Wavelord Co., Ltd Method for manufacturing semiconductor light emitting device

Citations (5)

* Cited by examiner, † Cited by third party
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US20060273335A1 (en) * 2004-07-12 2006-12-07 Hirokazu Asahara Semiconductor light emitting device
US20080210955A1 (en) * 2007-01-29 2008-09-04 Toyoda Gosei Co., Ltd. Group III-V semiconductor device and method for producing the same
US20090261370A1 (en) * 2008-04-21 2009-10-22 Hwan Hee Jeong Semiconductor light emitting device
US20100001145A1 (en) * 2008-07-01 2010-01-07 Scott Jill L Water bottle holder for crutch
US20100019264A1 (en) * 2008-07-24 2010-01-28 Hwan Hee Jeong Semiconductor light emitting device

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KR100613272B1 (ko) 2003-12-30 2006-08-18 주식회사 이츠웰 수직형 전극 구조를 가지는 발광 다이오드 및 그 제조 방법
KR20060062715A (ko) * 2004-12-06 2006-06-12 삼성전기주식회사 정전방전 보호 다이오드를 구비한 ＧａＮ 계열 반도체발광 소자
JP4697397B2 (ja) * 2005-02-16 2011-06-08 サンケン電気株式会社 複合半導体装置
JP5044986B2 (ja) * 2006-05-17 2012-10-10 サンケン電気株式会社 半導体発光装置
JP4765916B2 (ja) * 2006-12-04 2011-09-07 サンケン電気株式会社 半導体発光素子
CN101335313B (zh) * 2007-06-29 2010-05-26 上海蓝光科技有限公司 提高氮化镓基led抗静电能力的方法及氮化镓基led结构
KR101438811B1 (ko) * 2008-01-03 2014-09-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102009018603B9 (de) * 2008-04-25 2021-01-14 Samsung Electronics Co., Ltd. Leuchtvorrichtung und Herstellungsverfahren derselben
KR101506264B1 (ko) * 2008-06-13 2015-03-30 삼성전자주식회사 발광 소자, 발광 장치 및 상기 발광 소자의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060273335A1 (en) * 2004-07-12 2006-12-07 Hirokazu Asahara Semiconductor light emitting device
US20080210955A1 (en) * 2007-01-29 2008-09-04 Toyoda Gosei Co., Ltd. Group III-V semiconductor device and method for producing the same
US20090261370A1 (en) * 2008-04-21 2009-10-22 Hwan Hee Jeong Semiconductor light emitting device
US20100001145A1 (en) * 2008-07-01 2010-01-07 Scott Jill L Water bottle holder for crutch
US20100019264A1 (en) * 2008-07-24 2010-01-28 Hwan Hee Jeong Semiconductor light emitting device

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140209952A1 (en) * 2010-03-31 2014-07-31 Seoul Viosys Co., Ltd. High efficiency light emitting diode and method for fabricating the same
US9455378B2 (en) * 2010-03-31 2016-09-27 Seoul Viosys Co., Ltd. High efficiency light emitting diode and method for fabricating the same
US20140217457A1 (en) * 2011-05-25 2014-08-07 Wavesquare Inc. Light-emitting element chip and manufacturing method therefor
US20150357539A1 (en) * 2012-03-27 2015-12-10 Nichia Corporation Vertical nitride semiconductor device and method for manufacturing same
US9287481B2 (en) * 2012-03-27 2016-03-15 Nichia Corporation Vertical nitride semiconductor device and method for manufacturing same
US20130256739A1 (en) * 2012-03-27 2013-10-03 Nichia Corporation Vertical nitride semiconductor device and method for manufacturing same
US9196793B2 (en) * 2012-03-27 2015-11-24 Nichia Corporation Vertical nitride semiconductor device and method for manufacturing same
US10381524B2 (en) * 2012-04-18 2019-08-13 Nichia Corporation Semiconductor light emitting element including protective film and light shielding member
US9099610B2 (en) * 2012-04-26 2015-08-04 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
US20130285095A1 (en) * 2012-04-26 2013-10-31 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
US9196807B2 (en) * 2012-10-24 2015-11-24 Nichia Corporation Light emitting element
US20140110737A1 (en) * 2012-10-24 2014-04-24 Nichia Corporation Light emitting element
US9570658B2 (en) 2012-10-24 2017-02-14 Nichia Corporation Light emitting element
US20160005930A1 (en) * 2013-03-26 2016-01-07 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip encapsulated with an ald layer and corresponding method of production
JP2014041999A (ja) * 2013-06-18 2014-03-06 Toshiba Corp 半導体発光素子
US20160172545A1 (en) * 2013-07-16 2016-06-16 Osram Opto Semiconductors Gmbh Optoelectronic Semiconductor Chip
US10014444B2 (en) * 2013-07-16 2018-07-03 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
US20170125642A1 (en) * 2014-06-10 2017-05-04 Lg Innotek Co., Ltd. Light-emitting device and light emitting device package having the same
US9741903B2 (en) * 2014-06-10 2017-08-22 Lg Innotek Co., Ltd. Light-emitting device and light emitting device package having the same
US11177417B2 (en) * 2017-02-13 2021-11-16 Nichia Corporation Light emitting device including phosphor layer with protrusions and recesses and method for manufacturing same
US11942579B2 (en) 2017-02-13 2024-03-26 Nichia Corporation Light emitting device and adaptive driving beam headlamp

Also Published As

Publication number Publication date
TW201135978A (en) 2011-10-16
TWI479693B (zh) 2015-04-01
EP2355177A3 (de) 2014-12-10
US8450762B2 (en) 2013-05-28
US20120205711A1 (en) 2012-08-16
KR100974787B1 (ko) 2010-08-06
CN102148306A (zh) 2011-08-10
EP2355177A2 (de) 2011-08-10
EP2355177B1 (de) 2019-12-04
CN102148306B (zh) 2013-11-06

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Legal Events

Date Code Title Description
AS Assignment

Owner name: LG INNOTEK CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:JEONG, HWAN HEE;REEL/FRAME:025699/0940

Effective date: 20110114

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION