US20110154833A1 - Miniaturized liquid cooling device - Google Patents

Miniaturized liquid cooling device Download PDF

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Publication number
US20110154833A1
US20110154833A1 US12/755,437 US75543710A US2011154833A1 US 20110154833 A1 US20110154833 A1 US 20110154833A1 US 75543710 A US75543710 A US 75543710A US 2011154833 A1 US2011154833 A1 US 2011154833A1
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US
United States
Prior art keywords
electrode
loop
cooling device
liquid cooling
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/755,437
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English (en)
Inventor
Chien-Yu Chao
Yen-Chih Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Foxconn Technology Co Ltd
Original Assignee
Foxconn Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foxconn Technology Co Ltd filed Critical Foxconn Technology Co Ltd
Assigned to FOXCONN TECHNOLOGY CO., LTD. reassignment FOXCONN TECHNOLOGY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHAO, CHIEN-YU, CHEN, YEN-CHIH
Publication of US20110154833A1 publication Critical patent/US20110154833A1/en
Abandoned legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/16—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying an electrostatic field to the body of the heat-exchange medium
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F2245/00—Coatings; Surface treatments
    • F28F2245/04—Coatings; Surface treatments hydrophobic
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F2250/00—Arrangements for modifying the flow of the heat exchange media, e.g. flow guiding means; Particular flow patterns
    • F28F2250/08—Fluid driving means, e.g. pumps, fans
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the disclosure generally relates to liquid cooling devices, and more particularly to a miniaturized liquid cooling device for dissipating heat generated by electronic components.
  • CPUs central processing units
  • cooling devices are provided on the CPUs to dissipate heat therefrom.
  • a conventional cooling device includes an extruded heat sink combined with a fan.
  • such kind of cooling device may be unsatisfactory for cooling a modern high-speed CPU.
  • liquid cooling devices with high heat dissipation efficiencies are often used for dissipating heat generated by high frequency CPUs.
  • a typical liquid cooling device generally includes a heat absorber absorbing heat from the CPU, a heat dissipater dissipating the heat to the surrounding environment, a plurality of tubes connecting the heat absorber with the heat dissipater, and a pump driving working fluid to circulate along the tubes between the heat absorber and the heat dissipater.
  • the pump occupies a large volume, which increases the size of the liquid cooling device. This goes against the need for compact size in electronic products.
  • FIG. 1 is an assembled, isometric view of a miniaturized liquid cooling device in accordance with an exemplary embodiment of the present disclosure.
  • FIG. 2 is essentially a cross-sectional view of the liquid cooling device of FIG. 1 , taken along a line II-II thereof and showing a control circuit used for driving the liquid cooling device.
  • FIG. 3 is an enlarged view of a circled portion III of FIG. 2 .
  • FIGS. 4-5 are essentially cross-sectional views illustrating a principle of an electrowetting-on-dielectric (EWOD) effect, which principle is utilized by the liquid cooling device of FIG. 1 .
  • EWOD electrowetting-on-dielectric
  • the liquid cooling device 200 includes a base 20 , a closed loop pipe 21 and a plurality of electrode units 22 .
  • the liquid cooling device 200 is used for cooling an electronic component 300 .
  • the base 20 is a rectangular plate made of glass or silicon.
  • the base 20 defines a loop groove 201 in a top surface thereof.
  • the loop pipe 21 is formed on the base 20 and located in the loop groove 201 .
  • the loop pipe 21 is made of silicon nitride (Si 3 N 4 ), and defines a loop passage therein.
  • the loop passage of the loop pipe 21 is filled with a working fluid 30 .
  • the loop pipe 21 has a substantially rectangular frame shape, as viewed from above.
  • the loop pipe 21 includes a heat absorbing section 211 , and an opposite heat dissipation section 212 .
  • the heat dissipation section 212 can be thermally connected to a cooling member via the base 20 .
  • the loop pipe 21 forms two substantially spherical reservoirs 213 at two diagonally opposite corners thereof, for storing the working fluid 30 .
  • One of the two reservoirs 213 defines an injection hole 214 therein.
  • the working fluid 30 is filled into the loop pipe 21 through the injection hole 214 .
  • the injection hole 214 is sealed by a plug 215 .
  • the loop pipe 21 is integrally formed on the base 20 by a wet etching method. That is, the loop pipe 21 is in contact with the base 20 , with the loop pipe 21 and the base 20 forming portions of a single, unitary body.
  • a hydrophobic layer 216 made of Teflon® (polytetrafluoroethylene) is coated on an inner surface of the loop pipe 21 to make the surface hydrophobic.
  • the electrode units 22 are formed on the base 20 and spaced from each other along the loop pipe 21 .
  • the electrode units 22 are arranged along substantially an entire length of the loop pipe 21 .
  • the electrode units 22 are arranged at substantially regular intervals along the entire length of the loop pipe 21 .
  • Each electrode unit 22 includes a first electrode 221 and an opposite second electrode 222 .
  • the first electrode 221 and the second electrode 222 of each electrode unit 22 are located at two sides of a pipe body of the loop pipe 21 to sandwich the pipe body of the loop pipe 21 therebetween.
  • the first electrode 221 and the second electrode 222 of the electrode unit 22 are indirectly connected to the pipe body of the loop pipe 21 .
  • a first dielectric layer 23 is formed between the first electrode 221 and an outer surface of the pipe body of the loop pipe 21
  • a second dielectric layer 24 is formed between the second electrode 222 and the outer surface of the pipe body of the loop pipe 21 .
  • the first electrode 221 and the second electrode 222 are integrally formed on the base 20 via an etching method.
  • the electrode units 22 are firstly formed on the base 20 .
  • the first and the second dielectric layers 23 , 24 can then be respectively formed by depositing a layer of silicon nitride (Si 3 N 4 ) on inner ends of the first electrode 221 and the second electrode 222 of each electrode unit 22 . After that, the loop pipe 21 is formed on the base 20 .
  • the loop pipe 21 is firstly formed on the base 20 .
  • the first and the second dielectric layers 23 , 24 can then be respectively formed by depositing a layer of silicon nitride (Si 3 N 4 ) on the outer surface of the loop pipe 21 .
  • the electrode units 22 are formed on the base 20 .
  • the first electrode 221 and the second electrode 222 of each electrode unit 22 are electrically connected to a control circuit 40 via a plurality of electrical wires 41 .
  • the electronic component 300 is attached to a bottom surface of the base 20 , and is located under the heat absorbing section 211 of the loop pipe 21 . Heat generated by the electronic component 300 is transferred to the heat absorbing section 211 of the loop pipe 21 via the base 20 , thereby heating the working fluid 30 in the loop pipe 21 .
  • the electrowetting-on-dielectric (EWOD) effect is a phenomenon where a contact angle of a fluid segment or a fluid droplet varies when a voltage is applied on the fluid segment or fluid droplet (see FIG. 5 ), whereas a contact angle of the fluid segment or fluid droplet remains as normal when no voltage is applied (see FIG. 4 ). Therefore, when a voltage is applied on just one side of a fluid segment or fluid droplet, contact angles of two opposite sides of the fluid segment or fluid droplet become different from each other, which causes a difference between surface tensions of the two sides of the fluid segment or fluid droplet. The difference between the surface tensions drives the fluid segment or fluid droplet to move towards a place having higher voltage.
  • the liquid cooling device 200 During operation of the liquid cooling device 200 , voltages are regularly applied on the electrode units 22 via the control circuit 40 so as to drive the working fluid 30 to move along the loop pipe 21 under the EWOD effect.
  • the heated working fluid 30 in the heat absorbing section 211 of the loop pipe 21 can be driven to the heat dissipation section 212 of the loop pipe 21 .
  • the cooled working fluid 30 After releasing heat through the base 20 at the heat dissipation section 212 of the loop pipe 21 , the cooled working fluid 30 is driven back to the heat absorbing section 211 of the loop pipe 21 .
  • the working fluid 30 circulates in the liquid cooling device 200 under the EWOD effect to continuously dissipate heat from the electronic component 300 to the surrounding environment.
  • the liquid cooling device 200 can be manufactured by Micro Electro Mechanical Systems (MEMS) manufacturing technology.
  • MEMS Micro Electro Mechanical Systems
  • the liquid cooling device 200 is miniaturized and occupies a small size.
  • the working fluid 30 is driven to efficiently circulate in the loop pipe 21 under the EWOD effect. No mechanical pump exits in the liquid cooling device 200 . Therefore, a quiet working environment is obtained.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
US12/755,437 2009-12-29 2010-04-07 Miniaturized liquid cooling device Abandoned US20110154833A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW098145684A TWI506238B (zh) 2009-12-29 2009-12-29 微型液體冷卻裝置
TW98145684 2009-12-29

Publications (1)

Publication Number Publication Date
US20110154833A1 true US20110154833A1 (en) 2011-06-30

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US12/755,437 Abandoned US20110154833A1 (en) 2009-12-29 2010-04-07 Miniaturized liquid cooling device

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US (1) US20110154833A1 (zh)
TW (1) TWI506238B (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014013978A1 (ja) * 2012-07-17 2014-01-23 日産自動車株式会社 磁気冷暖房装置
US20140027100A1 (en) * 2011-04-03 2014-01-30 Nec Corporation Piping structure of cooling device, method for making the same, and method for connecting pipes
JPWO2015056322A1 (ja) * 2013-10-17 2017-03-09 日産自動車株式会社 磁気冷暖房装置
CN115857229A (zh) * 2023-02-28 2023-03-28 惠科股份有限公司 背光模组及显示装置
US12055755B1 (en) * 2019-07-02 2024-08-06 Psiquantum, Corp. Cryogenic microfluidic cooling for photonic integrated circuits

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6250379B1 (en) * 1994-05-17 2001-06-26 Hde Metallwerk Gmbh High-speed capillary tube heat exchanger
US6452799B1 (en) * 2000-09-15 2002-09-17 Lucent Technologies Inc. Integrated circuit cooling system
US20040080913A1 (en) * 2002-02-12 2004-04-29 Roy Zeighami Method of cooling semiconductor die using microchannel thermosyphon
US20050016715A1 (en) * 2003-07-23 2005-01-27 Douglas Werner Hermetic closed loop fluid system
US6987668B2 (en) * 2000-12-20 2006-01-17 Hitachi, Ltd. Liquid cooling system and personal computer using thereof
US20060144566A1 (en) * 2004-12-30 2006-07-06 Jensen Kip B System and method for cooling an integrated circuit device by electromagnetically pumping a fluid
US20060278373A1 (en) * 2005-06-09 2006-12-14 Industrial Technology Research Institute Microchannel cooling device with magnetocaloric pumping
US20080110598A1 (en) * 2005-09-16 2008-05-15 Progressive Cooling Solutions, Inc. System and method of a heat transfer system and a condensor
US20090000768A1 (en) * 2007-06-27 2009-01-01 Foxconn Technology Co., Ltd. Heat dissipation device
US20090272180A1 (en) * 2008-04-30 2009-11-05 Yuh-Shyong Yang Continuous testing device and continuous testing system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6565727B1 (en) * 1999-01-25 2003-05-20 Nanolytics, Inc. Actuators for microfluidics without moving parts
JP2008509550A (ja) * 2004-08-05 2008-03-27 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電子基板用冷却システム
TW200938954A (en) * 2008-03-05 2009-09-16 Univ Nat Cheng Kung Hydrophilic micro-conduit material and micro-structure containing hydrophilic substrate and micro-conduit element using the same

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6250379B1 (en) * 1994-05-17 2001-06-26 Hde Metallwerk Gmbh High-speed capillary tube heat exchanger
US6452799B1 (en) * 2000-09-15 2002-09-17 Lucent Technologies Inc. Integrated circuit cooling system
US6987668B2 (en) * 2000-12-20 2006-01-17 Hitachi, Ltd. Liquid cooling system and personal computer using thereof
US20040080913A1 (en) * 2002-02-12 2004-04-29 Roy Zeighami Method of cooling semiconductor die using microchannel thermosyphon
US20050016715A1 (en) * 2003-07-23 2005-01-27 Douglas Werner Hermetic closed loop fluid system
US20060144566A1 (en) * 2004-12-30 2006-07-06 Jensen Kip B System and method for cooling an integrated circuit device by electromagnetically pumping a fluid
US20060278373A1 (en) * 2005-06-09 2006-12-14 Industrial Technology Research Institute Microchannel cooling device with magnetocaloric pumping
US20080110598A1 (en) * 2005-09-16 2008-05-15 Progressive Cooling Solutions, Inc. System and method of a heat transfer system and a condensor
US20090000768A1 (en) * 2007-06-27 2009-01-01 Foxconn Technology Co., Ltd. Heat dissipation device
US20090272180A1 (en) * 2008-04-30 2009-11-05 Yuh-Shyong Yang Continuous testing device and continuous testing system

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140027100A1 (en) * 2011-04-03 2014-01-30 Nec Corporation Piping structure of cooling device, method for making the same, and method for connecting pipes
WO2014013978A1 (ja) * 2012-07-17 2014-01-23 日産自動車株式会社 磁気冷暖房装置
JP5796682B2 (ja) * 2012-07-17 2015-10-21 日産自動車株式会社 磁気冷暖房装置
JPWO2015056322A1 (ja) * 2013-10-17 2017-03-09 日産自動車株式会社 磁気冷暖房装置
US12055755B1 (en) * 2019-07-02 2024-08-06 Psiquantum, Corp. Cryogenic microfluidic cooling for photonic integrated circuits
CN115857229A (zh) * 2023-02-28 2023-03-28 惠科股份有限公司 背光模组及显示装置

Also Published As

Publication number Publication date
TW201122403A (en) 2011-07-01
TWI506238B (zh) 2015-11-01

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