US20110139369A1 - Etching apparatus - Google Patents

Etching apparatus Download PDF

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Publication number
US20110139369A1
US20110139369A1 US12/960,698 US96069810A US2011139369A1 US 20110139369 A1 US20110139369 A1 US 20110139369A1 US 96069810 A US96069810 A US 96069810A US 2011139369 A1 US2011139369 A1 US 2011139369A1
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US
United States
Prior art keywords
chamber
etching
substrate
opening
chambers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/960,698
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English (en)
Inventor
Suk-Chang Jang
Chang-Soo Kim
Yun-Sik Ham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Mobile Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Mobile Display Co Ltd filed Critical Samsung Mobile Display Co Ltd
Assigned to SAMSUNG MOBILE DISPLAY CO., LTD. reassignment SAMSUNG MOBILE DISPLAY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HAM, YUN-SIK, JANG, SUK-CHANG, KIM, CHANG-SOO
Publication of US20110139369A1 publication Critical patent/US20110139369A1/en
Assigned to SAMSUNG DISPLAY CO., LTD. reassignment SAMSUNG DISPLAY CO., LTD. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: SAMSUNG MOBILE DISPLAY CO., LTD.
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

Definitions

  • the described technology relates generally to an etching apparatus.
  • Etching methods have been widely used in the manufacturing of flat panel display panels and semiconductors.
  • Etching methods include a dip etching scheme in which a substrate is dipped in an etching solution and etched, and a shower etching scheme in which an etching solution is sprayed on the substrate to be etched.
  • the described technology has been made in an effort to provide an etching apparatus that is capable of reducing the occurrence of defects in an etching process.
  • An etching apparatus includes: a plurality of chambers each having an opening for flowing in or discharging a substrate; an injection member that is installed inside each chamber to inject a chemical liquid; and an interception member that is adjacently installed at the opening of each chamber and draws introduced gas into the opening.
  • An acid outlet may be installed in the chamber to suck the fumes generated in the chamber, and the interception member may be formed in a pipe shape in which a plurality of suction holes are formed. Further, the opening is formed in a quadrangular shape having a width direction and a height direction, and the interception member is disposed along the width direction of the opening and the suction holes are disposed to be spaced along the width direction of the opening.
  • the interception member may be installed on the opening in the chamber, the opening is an outlet through which the substrate is discharged, and the interception member is disposed adjacent to the outlet.
  • the opening may include an inlet through which the substrate is flowed in, the interception member may be disposed adjacent to the inlet, the opening may include the inlet through which the substrate is flowed in and the outlet through which the substrate is discharged, and the interception member may be installed at a portion adjacent to the inlet and the outlet, respectively.
  • the interception member may be installed with a cover that covers the interception member, and the upper surface of the cover may be formed to be tilted with respect to the ground.
  • the chambers may include the etching chamber in which the etching process is performed and the buffer chamber in which the substrate is temporarily held and the etching chamber and the buffer chamber may each include the inlet through which the substrate is flowed in and the outlet through which the substrate is discharged, wherein the interception member may be installed at a portion adjacent to the inlet of the etching chamber and the interception member may be installed at a portion adjacent to the outlet of the buffer chamber.
  • the chambers may include the etching chamber in which the etching process is performed and the buffer chamber in which the substrate is temporarily held, the etching chamber and the buffer chamber each may include the inlet through which the substrate is flowed in and the outlet through which the substrate is discharged, and the interception member may be installed at a portion adjacent to the inlet and outlet of the etching chamber, respectively, and the interception member may be installed at a portion adjacent to the outlet of the buffer chamber.
  • the interception member is installed inside the chamber of the etching apparatus to intercept the fumes generated from the adjacent chamber from being introduced into other chambers, making it possible to reduce the occurrence of the etching defects.
  • FIG. 1 is a configuration view showing the etching apparatus according to a first exemplary embodiment
  • FIG. 2 is a perspective view showing the first chamber according to the first exemplary embodiment
  • FIG. 3 is a cross-sectional view taken along line of FIG. 2 ;
  • FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 2 ;
  • FIG. 5 is a perspective view showing an interception member according to a first exemplary embodiment
  • FIG. 6 is a configuration view showing an etching apparatus according to a second exemplary embodiment.
  • FIG. 7 is a configuration view showing an etching apparatus according to a third exemplary embodiment.
  • the word “comprise” and variations such as “comprises” or “comprising” will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.
  • the word “on” will be understood as positioned on or below a subject member, and does not necessarily mean as positioned on the upper part based on the gravity direction.
  • constituent elements having the same configuration are representatively described in a first exemplary embodiment by using the same reference numeral and only constituent elements other than the constituent elements described in the first exemplary embodiment will be described in other embodiments.
  • a conventional shower etching apparatus may be configured to include a buffer chamber, an etching chamber, a washing chamber, a dry chamber, etc.
  • the etching solution used in the etching apparatus is a mixture of an inorganic acid, hydrogen peroxide, etc., and generates fumes during the etching process.
  • the etching apparatus in the related art has an acid outlet for each etching section.
  • the fumes introduced into a non-used chamber from a neighboring process chamber may condense in the structure and then drip down. When the drip of the condensed fumes falls onto the substrate, an etching defect occurs.
  • the fumes are introduced into a buffer chamber before entering the etching section, thereby making it possible to generate an etching defect.
  • FIG. 1 is a configuration view showing the etching apparatus according to a first exemplary embodiment.
  • An etching apparatus 100 includes a plurality of chambers 101 , 102 , 103 , and 104 , wherein the chambers 101 , 102 , 103 , and 104 are configured to include a first chamber 101 , a second chamber 102 , a third chamber 103 , and a fourth chamber 104 that are sequentially arranged.
  • the first chamber 101 is a buffer chamber in which a substrate 121 , which is an etching subject, is held, and the second chamber 102 , the third chamber 103 , and the fourth chamber 104 are the etching chamber in which the etching is performed.
  • the substrate 121 is transferred to the fourth chamber 104 via the second chamber 102 and the third chamber 103 from the first chamber 101 .
  • the present exemplary embodiment illustrates the case where the etching is performed only in the second chamber 102 and the etching is not performed in the third chamber 103 and the fourth chamber 104 .
  • the chambers 101 , 102 , 103 , and 104 are installed with an injection member 150 that injects a chemical solution into the chambers 101 , 102 , 103 , and 104 and an interception member 130 that intercepts gas introduced into the chambers 101 , 102 , 103 , and 104 .
  • the substrate 121 for having a pattern formed thereto is installed in the chambers 101 , 102 , 103 , and 104 .
  • the substrate 121 may be a substrate that is applied to a flat panel display such as an organic light emitting diode (OLED) display, a liquid crystal display (LCD), etc., and various kinds of substrates such as a semiconductor wafer, etc., can be applied.
  • OLED organic light emitting diode
  • LCD liquid crystal display
  • FIG. 2 is a perspective view showing the first chamber according to the first exemplary embodiment
  • FIG. 3 is a cross-sectional view taken along line of FIG. 2
  • FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 2 .
  • the second chamber 102 , the third chamber 103 , and the fourth chamber 104 have the same structure as the first chamber 101 , and therefore the descriptions of the second chamber 102 , the third chamber 103 , and the fourth chamber 104 are parallel to the description of the first chamber 101 and will not be further explained.
  • a transfer member 125 that transfers the substrate 121 , an injection member 150 that injects the chemical solution to the substrate 121 , and the interception member 130 that sucks gas introduced into the first chamber 101 are included in the first chamber 101 .
  • the first chamber 101 is formed as an approximately quadrangular chamber, and is formed with the opening through which the substrate 121 may flow or move through and be discharged through.
  • the opening includes an inlet 112 through which the substrate 121 is flows or moves in and an outlet 113 through which the substrate is discharged.
  • the inlet 112 and the outlet 113 may each include a shutter (not shown) that opens and closes the inlet 112 and the outlet 113 .
  • the inlet 112 and the outlet 113 are formed as quadrangles having a width direction and a height direction.
  • the width direction is a direction intersecting the direction of the force of gravity and the height direction is a direction parallel with the direction of the force of gravity.
  • the substrate 121 may have various shapes such as a quadrangular plate, a circular plate, etc.
  • the transfer member 125 is formed as a cylindrical rod, and includes a plurality of rollers 126 .
  • the plurality of transfer members 125 that transfer the substrate 121 are installed below the substrate 121 , and the substrate 121 can be introduced in the first chamber 101 or discharged from the first chamber 101 according to rotation of the transfer members 125 .
  • the injection member 150 includes a plurality of chemical solution transfer pipes 150 a that supply the chemical solution, and a plurality of nozzles 152 that are installed at the chemical solution transfer pipes 150 a .
  • the plurality of chemical solution transfer pipes 150 a are arranged in parallel, and the ends thereof are communicated with each other by a connection pipe 150 b to receive the chemical solution.
  • the plurality of nozzles 152 are arranged to be spaced along the length direction of the chemical solution transfer pipes 150 a , and disperse the chemical solution to inject it to the substrate 121 .
  • the chemical solution injected to the substrate 121 etches the substrate 121 to form fine patterns on the substrate 121 .
  • the wall surface of the chamber 101 includes an acid outlet 115 that can discharge fumes generated due to the injection of the chemical solution.
  • the acid outlet 115 is formed as holes on the wall surface of the chamber 101 , and the acid outlet 115 is connected to an exhaust line to suck the fumes generated inside the chamber 101 and to discharge them to the outside.
  • the interception member 130 is installed at the outlet 113 of the chamber 101 to be adjacent to the outlet 113 .
  • the interception member 130 is formed as a pipe, and the interception member 130 is formed with a plurality of suction holes 132 to suck gas introduced through the outlet 113 .
  • the interception member 130 is connected to the exhaust line, and the exhaust line is connected to a vacuum pump. Thereby, the interception member 130 is communicated with the vacuum pump and a suction pressure is generated in the suction holes 132 to suck gas therethrough.
  • the interception member 130 is installed just on the outlet 113 based on the direction of the force of gravity and is disposed along the width direction of the outlet 113 . Therefore, the suction holes 132 are disposed to be spaced along the width direction of the plurality of outlets 113 .
  • the fumes generated in the adjacent chamber can be introduced into the chamber 101 through the outlet 113 .
  • the fumes introduced into the chamber 101 are accumulated and condensed therein, and the condensed chemical solution may drip into the substrate 121 causing etching defects in the substrate 121 previously discussed.
  • the interception member 130 sucks and discharges the fumes introduced through the outlet 113 , thereby intercepting the fumes from being introduced and accumulating into the chamber 101 . Thereby, the occurrence of the etching defects due to the fumes introduced into the adjacent chambers can be prevented.
  • a cover 140 covers the interception member 130 .
  • the cover 140 is formed in a box like shape, and an upper plate 141 of the cover 140 is formed to be tilted with respect to the ground.
  • the cover 140 prevents the chemical solution from contacting the interception member 130 , and the tilted upper plate 141 prevents the chemical solution from being accumulated on the upper plate 141 .
  • FIG. 6 is a configuration view showing an etching apparatus according to a second exemplary embodiment.
  • an etching apparatus 200 includes a plurality of chambers 201 , 202 , 203 , and 204 , and they include a first chamber 201 , a second chamber 202 , a third chamber 203 , and a fourth chamber 204 .
  • the first chamber 201 is a buffer chamber in which the substrate 221 is held, and the second chamber 202 , the third chamber 203 , and the fourth chamber 204 are chambers in which the etching is performed.
  • a first interception member 231 which is disposed adjacent to the outlet of the first chamber 201 to intercept fumes from being introduced into the first chamber 201 , is installed inside the first chamber 201 that is the buffer chamber.
  • an injection member 250 that injects the chemical solution to a substrate 221 and a second interception member 232 that is disposed adjacent to the inlet of the second chamber 202 to intercept the fumes from discharging to the outside of the second chamber 202 and being introduced from the outside are passed inside the second chamber 202 .
  • the third chamber 203 and the fourth chamber 204 have the same structure as the second chamber 202 , and therefore a description thereof is not required.
  • the first interception member 231 and the second interception member 232 include a pipe in which suction holes for sucking gas are formed, similar to the interception member of the above-mentioned first exemplary embodiment.
  • the first interception member 231 when the first interception member 231 is installed in the first chamber 201 , it can prevent the fumes from being introduced into the first chamber 201 , and when the second interception member 232 is installed inside the second chamber 202 , the third chamber 203 , and the fourth chamber 204 , it can prevent the fumes from being discharged to or introduced from the outside of the chambers 202 , 203 , and 204 through the inlet.
  • the present invention can stably prevent the occurrence of etching defects when fumes are introduced into an adjacent chamber.
  • FIG. 7 is a configuration view showing an etching apparatus according to a third exemplary embodiment.
  • an etching apparatus 300 includes a plurality of chambers 301 , 302 , 303 , and 304 that include a first chamber 301 , a second chamber 302 , a third chamber 303 , and a fourth chamber 304 .
  • the first chamber 301 is a buffer chamber in which a substrate 321 is held
  • the second chamber 302 , the third chamber 303 , and the fourth chamber 304 are chambers in which the etching is performed.
  • the third chamber 303 and the fourth chamber 304 are formed with the same structure as the second chamber 302 , and therefore descriptions thereof will be omitted here.
  • An injection member 350 that injects the chemical solution to the substrate 321 , a first interception member 331 that is disposed adjacent to the outlet of the second chamber 302 to intercept the fumes from being introduced or discharged to and from the second chamber 302 , and a second interception member 332 that is disposed adjacent to the inlet of the second chamber 302 to intercept the fumes from being discharged and introduced from and into the outside of the second chamber 302 are installed in the second chamber 302 .
  • the first interception member 331 and the second interception member 332 include the pipe in which a suction hole for sucking gas is formed, similar to the interception member of the above-mentioned first exemplary embodiment.
  • the first interception member 331 and the second interception member 332 suck gas that is distributed through the inlet or the outlet.
  • the first interception member 331 and the second interception member 332 when installed in the second chamber 302 , the third chamber 303 , and the fourth chamber 304 , it can prevent the fumes from being discharged to the outside of the chambers 302 , 303 , and 304 through the inlet or the outlet as well as the fumes from being introduced into the chambers 302 , 303 , and 304 through the inlet or the outlet.
  • the fumes can be prevented from being discharged from the third chamber 303 and be prevented from being introduced into the second chamber 302 and the fourth chamber 304 .
  • the first interception member 331 is installed in the first chamber 301 that is the buffer chamber.
  • the etching process is not performed in the first chamber 301 , and therefore it is sufficient to intercept the fumes from being introduced into the first chamber 301 . Therefore, the first interception member 331 is installed to intercept the fumes from being introduced into the first chamber 301 .

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
US12/960,698 2009-12-14 2010-12-06 Etching apparatus Abandoned US20110139369A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0124092 2009-12-14
KR1020090124092A KR101125568B1 (ko) 2009-12-14 2009-12-14 식각 장치

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US20110139369A1 true US20110139369A1 (en) 2011-06-16

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US12/960,698 Abandoned US20110139369A1 (en) 2009-12-14 2010-12-06 Etching apparatus

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US (1) US20110139369A1 (zh)
JP (1) JP5404545B2 (zh)
KR (1) KR101125568B1 (zh)
CN (1) CN102092955B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110284162A1 (en) * 2010-05-20 2011-11-24 Foxconn Advanced Technology Inc. Apparatus for wet processing substrate
US20140283993A1 (en) * 2013-03-22 2014-09-25 Samsung Display Co., Ltd. Etching apparatus
CN105044943A (zh) * 2015-08-25 2015-11-11 深圳市华星光电技术有限公司 蚀刻装置

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KR102006878B1 (ko) * 2012-12-27 2019-08-05 삼성디스플레이 주식회사 기판 검사식각 복합장치 및 이를 구비하는 기판 처리장치
CN105870008B (zh) * 2016-04-18 2018-10-23 武汉华星光电技术有限公司 蚀刻设备及蚀刻方法
KR102068047B1 (ko) * 2018-07-19 2020-01-20 (주)한빛테크놀로지 흄 차단 기능을 갖는 에칭 장치

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Publication number Priority date Publication date Assignee Title
US20110284162A1 (en) * 2010-05-20 2011-11-24 Foxconn Advanced Technology Inc. Apparatus for wet processing substrate
US20140283993A1 (en) * 2013-03-22 2014-09-25 Samsung Display Co., Ltd. Etching apparatus
CN105044943A (zh) * 2015-08-25 2015-11-11 深圳市华星光电技术有限公司 蚀刻装置

Also Published As

Publication number Publication date
KR20110067482A (ko) 2011-06-22
CN102092955A (zh) 2011-06-15
KR101125568B1 (ko) 2012-03-22
JP2011124537A (ja) 2011-06-23
JP5404545B2 (ja) 2014-02-05
CN102092955B (zh) 2015-07-08

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