US20110121359A1 - Multi-Layer Reconfigurable Switches - Google Patents

Multi-Layer Reconfigurable Switches Download PDF

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US20110121359A1
US20110121359A1 US13/056,101 US200813056101A US2011121359A1 US 20110121359 A1 US20110121359 A1 US 20110121359A1 US 200813056101 A US200813056101 A US 200813056101A US 2011121359 A1 US2011121359 A1 US 2011121359A1
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active region
switch
dopant
rectifier
electrode
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Jianhua Yang
Julien Borghetti
Duncan Stewart
R. Stanley Williams
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Hewlett Packard Enterprise Development LP
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Jianhua Yang
Julien Borghetti
Duncan Stewart
Williams R Stanley
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
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    • H10N70/883—Oxides or nitrides
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    • H10N70/801—Constructional details of multistable switching devices
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    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Definitions

  • Embodiments of the present invention are related to nanoscale electronic devices, and, in particular, to re-configurable diode switches that can be implemented in crossbar arrays.
  • Nanoscale electronics promise a number of advantages over microscale, photolithography-based electronics, including significantly reduced features sizes and the potential for self-assembly and for other relatively inexpensive, non-photolithography-based fabrication methods.
  • the design and manufacture of nanoscale electronic devices present many new problems need to be addressed before large-scale commercial production of nanoscale electronic devices and incorporation of nanoscale electronic devices into microscale and larger-scale systems, devices, and products.
  • an electronic switch includes a first electrode, a second electrode, and an active region disposed between the first electrode and the second electrode and including at least one dopant.
  • the switch can be re-configured to operate as a forward rectifier, a reverse rectifier, a shunted rectifier, or a head-to-head rectifier by positioning the dopant within the active region in order to control the flow of charge carriers through the switch.
  • FIG. 1A shows a two-terminal switch configured in accordance with embodiments of the present invention.
  • FIG. 1B shows profiles of tunneling barriers associated with four rectifiers configured in accordance with embodiments of the present invention.
  • FIG. 2 shows plots of current-versus-voltage curves associated with the four rectifiers shown in FIG. 1B and three modes of switching between pairs of the rectifiers in accordance with embodiments of the present invention.
  • FIG. 3 shows an isometric view of a nanowire crossbar array configured in accordance with embodiments of the present invention.
  • FIG. 4 shows an isometric view of a nanowire crossbar revealing switches located at intersection of a crossbar configured in accordance with embodiments of the present invention.
  • FIG. 5A shows an isometric view of four separate switches configured to demonstrate the role oxygen vacancies play in switches in accordance with embodiments of the present invention.
  • FIG. 5B shows a plot of current-versus-voltage curves associated with switches shown in FIG. 5A in accordance with embodiments of the present invention.
  • FIG. 6 shows an isometric view of a switch configured in accordance with embodiments of the present invention.
  • FIGS. 7A-7C shows experimental results obtained from shunting switching a Pt/TiO 2 /Pt switch in accordance with embodiments of the present invention.
  • FIGS. 8A-8C represent experimental results obtained from opening switching a Pt/TiO 2 /Pt switch in accordance with embodiments of the present invention.
  • FIGS. 9A-9C represent experimental results obtained from inverting switching a Pt/TiO 2 /Pt switch in accordance with embodiments of the present invention.
  • a switch configured in accordance with embodiments of the present invention is composed of an active region sandwiched between two electrodes.
  • the two interfaces between the active region and the electrodes are Schottky contacts.
  • the active region is a diode that can be switched into one of four different rectifying states by applying an electrical field of an appropriate magnitude and polarity across the active region.
  • the electric field changes the Schottky contacts at the interfaces to have Ohmic-like barriers and/or Schottky-like barriers, thus enabling the active region to be configured and the switch to operate as one of the four types of rectifiers: a forward rectifier, a reverse rectifier, a shunted rectifier, and a head-to-head rectifier.
  • the active region remains in a particular rectifying state provided operating voltages applied to the switch do not exceed the magnitude of the electric field used to switch the rectifying state of the active region.
  • a description of two-terminal electronically actuated switches is provided in a first subsection.
  • a description of switching the rectifying state of the switches is provided in a second subsection.
  • Various materials that can be used to fabricate the switches are provided in a third subsection.
  • Implementing the switches in crossbar arrays is provided in a fourth subsection.
  • a switch composed of platinum electrodes and a TiO 2 active region is described in a fifth subsection.
  • FIG. 1A shows a two-terminal switch 100 configured in accordance with embodiments of the present invention.
  • the switch 100 is composed of three layers: an active region 102 sandwiched between a first electrode 104 and a second electrode 106 .
  • the first electrode 104 is connected to a voltage source 108 and the second electrode is connected to a ground 110 .
  • the active region 102 is a diode that includes a dopant. Applying an electric field of an appropriate magnitude and polarity changes the position of the dopant.
  • the active region 102 can be operated as one of the four different types of rectifiers: a forward rectifier, a reverse rectifier, a head-to-head rectifier, and a shunted rectifier.
  • the active region 102 is composed of a primary active region, or layer, and a secondary active region, or layer.
  • the primary active region comprises a thin film of a material that is electronically semiconducting or nominally electronically insulating and can also be a weakly ionic conductor.
  • the primary active material is capable of transporting and hosting ions that act as dopants to control the flow of electrons through the switch 100 .
  • the basic mode of operation is to apply an electrical field of an appropriate magnitude and polarity across the active region 102 . When the magnitude of the electrical field, also called a “drift field,” exceeds some threshold for enabling the motion of the dopants in the primary material the dopant can drift into or out of the primary material via ionic transport.
  • the ionic species are specifically chosen from those that act as electrical dopants for the primary material, and thereby change the rectifying state of the primary active material.
  • a rectifier can be changed from low conductivity (i.e, an undoped semiconductor or insulator—switch “off” configuration) to high conductivity (doped to provide a higher conductivity—switch “on” configuration) or from high conductivity to low conductivity (switch “on” to switch “off”).
  • the primary active material and the dopants are chosen such that the drift of the dopants into or out of the primary active material is possible but not too facile in order to ensure that the active region 102 remains in a particular rectifying state for a reasonable period of time, perhaps for many years at room temperature.
  • the active region 102 is nonvolatile.
  • the active region 102 is memristive (i.e., memory resistive) and holds its rectifying state after the drift field has been removed.
  • Applying a drift field with a large enough magnitude causes both electron current and dopant to drift, whereas applying biases with lower relative voltage magnitudes than the drift field causes negligible dopant drift enabling the switch to hold its rectifying state.
  • the secondary active material comprises a thin film that is a source of dopants for the primary active material.
  • dopants may be impurity atoms such as hydrogen or some other cation, such as alkali or transition metals, that act as electron donors for the primary active material.
  • the dopants can be anion vacancies, which in the primary active material are charged and therefore are also electron donors for the lattice. It is also possible to drive the anions into the primary active material, which become electron acceptors or hole donors.
  • the primary active material can be nanocrystalline, nanoporous, or amorphous.
  • the mobility of the dopants in such nanostructured materials is much higher than in bulk crystalline material, since diffusion can occur through grain boundaries, pores or through local structural imperfections in an amorphous material.
  • the primary active material film is thin, the amount of time needed for dopants to diffuse into or out of region of the film to substantially change the film's conductivity is relatively rapid. For example, the time needed for a diffusive process varies as the square of the distance covered, so the time to diffuse one nanometer is one-millionth the time to diffuse one micrometer.
  • the primary active and secondary active materials of the active region 102 are contacted on either side by metal electrodes 104 and 106 , or one of the electrodes can be composed of a semiconductor material and the other a metal.
  • the active region 102 is composed of semiconductor material, the contract between a metal electrode and the active region 102 depletes the active region 102 of free charge carriers.
  • the active region 102 has a net charge that depends on the identity of the dopant which is positive in the case of electron donors and negative in the case of electron acceptors.
  • Conduction of electrons through the primary active material is via quantum mechanical tunneling through the Ohmic-like barrier.
  • the tunneling barrier is a Schottky-like barrier, which is high and wide.
  • the conductivity through the switching material 102 is low and the device 100 is in the “off” state.
  • the tunneling barrier is an Ohmic-like barrier and the width and perhaps the height of the tunneling barrier are diminished by the potential of the dopants, which results in an increase in the conductivity, and the device 100 is in the “on” state.
  • Each of the four rectifiers has a different dopant arrangement.
  • the interface When the dopant is located at or near an electrode/active region interface, the interface has an Ohmic-like barrier. Thus, charge carriers can readily tunnel through the Ohmic-like barrier into and out of the active region 102 .
  • an undoped portion of the active region 102 at or near an electrode/active region interface has a Schottky-like barrier that is either too high or wide to permit most charge carriers from tunneling through the active region 102 .
  • FIG. 1B shows the relative locations of the Ohmic-like and Schottky-like barriers associated with each of the four rectifiers in accordance with embodiments of the present invention.
  • a forward rectifier 112 and a reverse rectifier 113 have Ohmic-like barriers and Schottky-like barriers located at opposite interfaces.
  • a head-to-head rectifier 114 is characterized by having the dopants distributed within the active region 102 leaving Schottky-like barriers at both interfaces.
  • a shunted rectifier 115 is characterized by having dopants located at or near both interfaces creating Ohmic-like barriers at both interfaces.
  • Switching from one rectifier to another can be accomplished by applying an electric field of an appropriate magnitude and polarity across the active region 102 .
  • the electric field forces the dopants to drift into or out of the electrode/active region interface regions thus changing the rectifying state of the device 100 .
  • an appropriate electric field can be used to force dopants located near the interfaces of the shunted rectifier 115 to move to one of the interfaces thus changing the shunted rectifier 115 into either the forward rectifier 112 or the reverse rectifier 113 .
  • the current-versus-voltage (I-V) characteristic curves associated with each of the four rectifiers and switching from one rectifier to another is described in greater detail below with reference to FIG. 2 .
  • the ability of the charged species to diffuse into and out of the primary active material is substantially improved if one of the interfaces connecting the active region 102 to a metal or semiconductor electrode is non-covalently bonded.
  • Such an interface may be caused by a void in the material or it may be the result of an interface that contains a material that does not form covalent bonds with the electrode, the primary active material, or both.
  • This non-covalently bonded interface lowers the activation energy of the atomic rearrangements that are needed for drift of the dopants in the primary active material.
  • This interface is essentially an extremely thin insulator, and adds very little to the total series resistance of the switch.
  • the primary active material can be a weak ionic conductor.
  • the definition of a weak ionic conductor depends on the application for which a switch 100 is designed.
  • the mobility ⁇ d and diffusion constant D for a dopant in a lattice are directly proportional to one another as characterized by the Einstein relation:
  • the diffusion constant D is Boltzmann's constant
  • T absolute temperature
  • a weakly ionic conductor is one in which the dopant mobility ⁇ d and the diffusion constant D are small enough to ensure the stability or non-volatility of the active region 102 for as long as necessary under the desired conditions.
  • strongly ionic conductors would have relatively larger dopant mobilities and be unstable against diffusion.
  • the active region 102 is non-volatile and re-configurable and exhibits diode rectifying states with memristive switching.
  • FIG. 2 shows schematic profiles of the four rectifiers 201 - 204 of the active region 102 and three modes of switching between pairs of the rectifiers in accordance with embodiments of the present invention.
  • FIG. 2 includes circuit diagrams 205 - 208 and I-V characteristic plots 210 - 213 that are associated with each of the four rectifiers 201 - 204 . As shown in FIG.
  • each of the four rectifiers 201 - 204 of the switch 100 represents a different profile distribution of dopants, and therefore, has a different associated I-V characteristic represented in each of the plots 210 - 213 .
  • Electrode/active region contacts are typically Ohmic-like in the case of heavy doping, and rectifying or Schottky-like in the case of low doping. Thus, the concentration of dopants at an interface determines the electrical behavior, and therefore, the transport of electrons through the switch 100 .
  • the four different rectifiers 201 - 204 are identified as a forward rectifier, a reverse rectifier, a shunted rectifier, and a head-to-head rectifier, respectively. The rectifying state properties of each of these rectifiers depend on the distribution of dopants within the active region 102 .
  • plots 210 - 213 of the I-V characteristic curves reveal the response of the switch 100 to different voltage polarities and magnitudes.
  • plot 210 reveals that when the switch 100 is configured as the forward rectifier 201 , current flows from the first electrode 104 to the second electrode for positive polarity voltages exceeding a voltage 214 and resistance is large for negative polarity voltages.
  • Plot 211 reveals that when the switch 100 is configured as the reverse rectifier 202 , current flows from the second electrode 106 to the first electrode 104 for negative polarity voltages exceeding a voltage 215 and resistance is large for positive polarity voltages.
  • Plot 212 reveals that when the switch 100 is configured as the shunted rectifier 203 , current substantially flows undisturbed through the switch 100 for positive and negative polarity voltages with magnitudes exceeding voltages 216 and 217 .
  • plot 213 reveals that when the switch 100 is configured as a head-to-head rectifier 204 , the resistance of the switch 100 is high for positive and negative polarity voltages between voltages 218 and 219 .
  • plots 210 - 213 show only operating voltage ranges. In other words, the magnitudes of voltages applied to the rectifiers 201 - 204 represented in plots 210 - 213 are not large enough to change the rectifier to a different rectifier or destroy the switch 100 .
  • the dopants are mobile under an appropriate drift field because the active region 102 may only be a few nanometers thick.
  • the reconfiguration of the dopant profiles due to the drift of dopants under a drift field leads to electrical switching between the four rectifiers.
  • shunting is switching between the forward rectifier 201 and the shunted rectifier 203 .
  • interface 220 is heavily doped and remains Ohmic-like with negligible changes during the electrical biasing.
  • a bias with an appropriate polarity and magnitude on the first electrode 104 attracts a portion of the dopants to the interface 222 , switching the device from the forward rectifier 201 to the shunted rectifier 203 .
  • a bias with an opposite polarity and approximately the same magnitude switches the shunted rectifier 203 back to the forward rectifier 201 .
  • the switching between the reverse rectifier 202 and the shunted rectifier 203 also belongs to this type of switching, indicated by diagonal arrow 224 .
  • Opening is switching between the reverse rectifier 202 and the head-to-head rectifier 204 .
  • the undoped interface 220 remains unchanged and only the doped interface 222 is switched.
  • the undoped interface contains few dopants and remains rectifying instead of Ohmic-like.
  • a bias of an appropriate polarity and magnitude on the first electrode 104 forces dopants away from the interface 222 and switches the reverse rectifier 202 into the head-to-head rectifier 204 , and vice versa.
  • the switching between the forward rectifier 201 and the back-to-back rectifier 204 is also opening.
  • Inverting between the forward rectifier 201 and the reverse rectifier 202 involves simultaneously applying oppositely polarized biases to the electrodes 104 and 106 .
  • switching from the forward rectifier 201 to the reverse rectifier 202 is accomplished by applying oppositely polarized biases to the electrodes 104 and 106 to forces dopants away from the interface 220 and at the same time attracts dopants to the interface 222 .
  • Switching from the reverse rectifier 202 to the forward rectifier 201 is accomplished by applying oppositely polarized biases to the electrodes 104 and 106 to force dopants away from the interface 222 and at the same time attract dopants to the interface 220 . Therefore, the dopant profile across the active region 102 is essentially inverted and so is the rectifying orientation, resulting in a switching between a reverse rectifier and a forward rectifier.
  • the electrodes 104 and 106 can be composed of platinum, gold, silver, copper, or any other suitable metal, metallic compound (e.g. some perovskites such as BaTiO 3 and Ba 1-x La x TiO 3 ) or semiconductor.
  • the primary and secondary active materials of the active region 102 can be oxides, sulfides, selenides, nitrides, phosphides, arsenides, chlorides, and bromides of the transition and rare earth metals, with or without the alkaline earth metals being present.
  • there are various alloys of these compounds with each other which can have a wide range of compositions if they are mutually soluble in each other.
  • the active region 102 can be composed of mixed compounds, in which there are two or more metal atoms combined with some number of electronegative elements.
  • the dopants can be anion vacancies or different valence elements doped in the active region 102 .
  • One combination of materials is a primary active material that is undoped and stoichiometric, and thus a good insulator, combined with a secondary source/sink of the same or related parent material that either contains a large concentration of anion vacancies or other dopants that can drift into the primary material under the application of an appropriate bias.
  • the active region 102 can be composed of oxides that contain at least one oxygen atom (O) and at least one other element.
  • the active region 102 can be composed of titania (TiO 2 ), zirconia (ZrO 2 ), and hafnia (HfO 2 ). These materials are compatible with silicon (Si) integrated circuit technology because they do not create doping in the Si.
  • Other embodiments for the active region 102 include alloys of these oxides in pairs or with all three of the elements Ti, Zr, and Hf present.
  • Related compounds include titanates, zirconates, and hafnates.
  • titanates includes ATiO 3 , where A represents one of the divalent elements strontium (Sr), barium (Ba) calcium (Ca), magnesium (Mg), zinc (Zn), and cadmium (Cd).
  • the active region 102 can be composed of ABO 3 , where A represents a divalent element and B represents Ti, Zr, and Hf.
  • the mobile dopant can be an oxygen vacancy or an aliovalent element doped into the active region 102 .
  • the oxygen vacancies effectively act as dopants with one shallow and one deep energy level. Because even a relatively minor nonstoichiometry of about 0.1% oxygen vacancies in TiO 2-x is approximately equivalent to 5 ⁇ 10 19 dopants/cm 3 , modulating oxygen vacancy profiles have strong effect on electron transport.
  • the active region 102 can be a sulfide or a selenide of the transition metals with some ionic bonding character, essentially the sulfide and selenide analogues of the oxides described above.
  • the active region 102 can be a semiconducting nitride or a semiconducting halide.
  • semiconducting nitrides include AlN, GaN, ScN, YN, LaN, rare earth nitrides, and alloys of these compounds and more complex mixed metal nitrides
  • semiconducting halides include CuCl, CuBr, and AgCl.
  • the active region 102 can be a phosphide or an arsenide of various transition and rare earth metals. In all of these compounds, the mobile dopant can be an anion vacancy or an aliovalent element.
  • dopants can be used and are selected from a group consisting of hydrogen, alkali, and alkaline earth cations, transition metal cations, rare earth cations, oxygen anions or vacancies, chalcogenide anions or vacancies, nitrogen anions or vacancies, pnictide anions or vacancies, or halide anions or vacancies.
  • the active region 102 can also be composed of a wide variety of semiconductor materials including various combinations of direct and indirect semiconductors.
  • a direct semiconductor is characterized by the valence band maximum and the conduction band minimum occurring at the same wavenumber.
  • indirect semiconductors are characterized by the valence band maximum and the conduction band minimum occurring at different wavenumbers.
  • the indirect and direct semiconductors can be elemental and compound semiconductors. Indirect elemental semiconductors include Si and germanium (Ge), and compound semiconductors include III-V materials, where Roman numerals III and V represent elements in the IIIa and Va columns of the Periodic Table of the Elements.
  • Compound semiconductors can be composed of column IIIa elements, such as aluminum (Al), gallium (Ga), and indium (In), in combination with column Va elements, such as nitrogen (N), phosphorus (P), arsenic (As), and antimony (Sb). Compound semiconductors can also be further classified according to the relative quantities of III and V elements.
  • column IIIa elements such as aluminum (Al), gallium (Ga), and indium (In)
  • column Va elements such as nitrogen (N), phosphorus (P), arsenic (As), and antimony (Sb).
  • Compound semiconductors can also be further classified according to the relative quantities of III and V elements.
  • binary semiconductor compounds include semiconductors with empirical formulas GaAs, InP, InAs, and GaP; ternary compound semiconductors include semiconductors with empirical formula GaAs y P 1-y , where y ranges from greater than 0 to less than 1; and quaternary compound semiconductors include semiconductors with empirical formula In x Ga 1-x As y P 1-y , where both x and y independently range from greater than 0 to less than 1.
  • suitable compound semiconductors include II-VI materials, where II and VI represent elements in the IIb and VIa columns of the periodic table.
  • CdSe, ZnSe, ZnS, and ZnO are empirical formulas of exemplary binary II-VI compound semiconductors.
  • the dopants can be p-type impurities, which are atoms that introduce vacant electronic energy levels called “holes” to the electronic band gaps of the active region 102 . These impurities are also called “electron acceptors.”
  • the dopants can be n-type impurities, which are atoms that introduce filled electronic energy levels to the electronic band gap of the active region 102 . These impurities are called “electron donors.” For example, boron (B), Al, and Ga are p-type impurities that introduce vacant electronic energy levels near the valence band of Si; and P, As, and Sb are n-type impurities that introduce filled electronic energy levels near the conduction band of Si.
  • column VI impurities substitute for column V sites in the III-V lattice and serve as n-type impurities
  • column II impurities substitute for column III atoms in the III-V lattice to form p-type impurities.
  • Moderate doping of the active region 102 can have impurity concentrations in excess of about 10 15 impurities/cm 3 while more heavy doping of the active region 102 can have impurity concentrations in excess of about 10 19 impurities/cm 3 .
  • FIG. 3 shows an isometric view of a nanowire crossbar array 300 configured in accordance with embodiments of the present invention.
  • the crossbar array 300 is composed of a first layer of approximately parallel nanowires 302 that are overlain by a second layer of approximately parallel nanowires 304 .
  • the nanowires of the second layer 304 are roughly perpendicular, in orientation, to the nanowires of the first layer 302 , although the orientation angle between the layers may vary.
  • the two layers of nanowires form a lattice, or crossbar, each nanowire of the second layer 304 overlying all of the nanowires of the first layer 302 and coming into close contact with each nanowire of the first layer 302 at nanowire intersections that represent the closest contact between two nanowires.
  • nanowires in FIG. 3 are shown with rectangular cross sections, nanowires can also have square, circular, elliptical, or more complex cross sections.
  • the nanowires may also have many different widths or diameters and aspect ratios or eccentricities.
  • the term “nanowire crossbar” may refer to crossbars having one or more layers of sub-microscale wires, microscale wires, or wires with larger dimensions, in addition to nanowires.
  • the layers can be fabricated by mechanical nanoimprinting techniques.
  • nanowires can be chemically synthesized and can be deposited as layers of approximately parallel nanowires in one or more processing steps, including Langmuir-Blodgett processes. Other alternative techniques for fabricating nanowires may also be employed.
  • a two-layer nanowire crossbar comprising first and second layers, as shown in FIG. 3 , can be manufactured by any of numerous relatively straightforward processes.
  • Many different types of conductive and semi-conductive nanowires can be chemically synthesized from metallic and semiconductor substances, from combinations of these types of substances, and from other types of substances.
  • a nanowire crossbar may be connected to microscale address-wire leads or other electronic leads, through a variety of different methods in order to incorporate the nanowires into electrical circuits.
  • nanoscale electronic components such as resistors, and other familiar basic electronic components, can be fabricated to interconnect two overlapping nanowires. Any two nanowires connected by a switch is called a “crossbar junction.”
  • FIG. 4 shows an isometric view of a nanowire crossbar 400 revealing an intermediate layer 402 disposed between a first layer of approximately parallel nanowires 404 and a second layer of approximately parallel nanowires 406 in accordance with embodiments of the present invention.
  • the layer 402 is composed of sub-layers 408 and 410 .
  • the sub-layer 408 can be composed of an undoped material, and the sub-layer 410 can be composed of a doped material, respectively.
  • the material comprising the layer 402 and dopants are selected as described in subsection III to form switches 412 - 415 at each nanowire intersection.
  • the nanowires can be composed of suitable metal of semiconductor materials and serve as electrodes.
  • sub-layer 408 can be composed of TiO 2
  • relatively thinner sub-layer 410 can be composed of TiO 2-x , where oxygen vacancies in the sub-layer 410 are dopants
  • the nanowires can be composed of Pt.
  • the switch 414 is formed by a nanowire 416 in the first layer 404 , a nanowire 417 in the second layer 406 , and a region 418 within the layer 402 between the nanowires 416 and 417 .
  • Each of the switches 412 - 415 can be operated separately to produce the forward, reverse, shunted, and head-to-head rectifiers described above with reference to FIG. 2 .
  • Oxygen vacancies in TiO 2 operate as n-type dopants transforming a wide band-gap oxide into a material that operates as an electrically conductive doped semiconductor.
  • the dopant concentration at the two interfaces of the switch 100 play a crucial role in configuring the switch 100 to operate as one of the four rectifiers.
  • FIG. 5A shows an isometric view of four separate switches 501 - 504 configured to demonstrate the role oxygen vacancies play in modulating the properties of the interfaces in accordance with embodiments of the present invention. Modulating the oxygen vacancies in turn controls the flow of electrons through a crossbar junction.
  • the titanium dioxide layer 514 is a bi-layer consisting of a thin, approximately 4 nm thick, TiO 2 layer 516 with few oxygen vacancies and a thicker, approximately 120 nm thick, TiO 2-x layer 518 with many more oxygen vacancies.
  • the TiO 2-x layer is an n-type semiconductor with a carrier concentration of about 10 19 cm ⁇ 3 obtained from Hall measurement, and the TiO 2 layer is nearly stoichiometric.
  • I-V curve 520 corresponds to second electrodes 510 and 511 and reveals two Ohmic-like barriers at the Pt/TiO 2-x interfaces. The fact that the resistance between electrodes 510 and 511 is low indicates that the bulk oxide is conductive.
  • I-V curve 522 corresponds to electron transmission between the two first electrodes 505 and 506 and is symmetric and nonlinear, revealing two Schottky-like barriers at the Pt/TiO 2 interfaces.
  • a rectifying I-V curve 524 corresponds to electrodes 506 and 510 and is consistent with the fact that the corresponding device has a Schottky-like barrier at the Pt/TiO 2 interfaces and an Ohmic-like barrier at the Pt/TiO 2-x interfaces.
  • One explanation as to why the current level between first and second electrodes 506 and 510 is lower than that of the first electrodes 505 and 506 is due to the much smaller effective junction surface area in the former case.
  • An inset 526 in FIG. 5B is the log-scale I-V data showing reversible switching behavior of the switch formed between first and second electrodes 506 and 510 .
  • the initial resistance state of the switches i.e. the oxygen vacancy profile
  • the oxygen vacancy profile can be controlled by engineering the structure and/or the fabrication condition of the active region, such as deposition gas species, annealing environment, inserting pure metal (e.g., Ti) at the interface.
  • pure metal e.g., Ti
  • memristors are a class of passive two-terminal circuit elements that maintain a functional relationship between the time integrals of current and voltage. This results in resistance varying according to the device's memristance function. Specifically engineered memristors provide controllable resistance useful for switching current.
  • the memristor is a special case in so-called “memristive systems,” a class of mathematical models useful for certain empirically observed phenomena, such as the firing of neurons.
  • the definition of the memristor is based solely on fundamental circuit variables, similar to the resistor, capacitor, and inductor.
  • nonlinear memristors may be described by any of a variety of time-varying functions. As a result, memristors do not belong to Linear Time-Independent circuit models.
  • a linear time-invariant memristor is simply a conventional resistor.
  • the memristor is formally defined as a two-terminal element in which the magnetic flux ⁇ m between the terminals is a function of the amount of electric charge q that has passed through the device.
  • Each memristor is characterized by its memristance function describing the charge-dependent rate of change of flux with charge as follows:
  • the memristance is simply charge-dependent resistance.
  • M(q) is constant
  • M(q) is not constant, the equation is not equivalent because q and M(q) vary with time. Solving for voltage as a function of time gives:
  • V ( t ) M ( q ( t )) I ( t )
  • memristance defines a linear relationship between current and voltage, as long as charge does not vary.
  • nonzero current implies instantaneously varying charge.
  • Alternating current may reveal the linear dependence in circuit operation by inducing a measurable voltage without net charge movement, as long as the maximum change in q does not cause change in M.
  • the memristor is static when no current is applied. When I(t) and V(t) are 0, M(t) is constant. This is the essence of the memory effect.
  • FIG. 6 shows an isometric view of a general representation of a switch 600 representing used to obtain the experimental results described below with reference to FIGS. 7-9 and is provided as a reference in describing the results presented in FIGS. 7-9 .
  • the switch 600 comprises a TiO 2 active region 602 disposed between a crossing point of a Pt first electrode 604 and a Pt second electrode 606 .
  • the switch 600 was fabricated to have asymmetric oxygen vacancy concentrations at first interface 608 and second interface 610 . In performing the electrical measurements, the second electrode 606 was grounded.
  • FIGS. 7-9 present experimental results corresponding to shunting, opening, and inverting switching in accordance with embodiments of the present invention for a Pt/TiO 2 /Pt switch represented by the switch 600 .
  • loops such as loop 700 in FIG. 7A , represent negative and positive switching voltage sweeps. After each switching voltage sweep, a checking I-V was taken to measure the rectifying state of the device after switching.
  • FIGS. 7A-7C represent experimental results obtained from shunting switching an approximately 50 ⁇ 50 nm 2 Pt/TiO 2 /Pt switch in accordance with embodiments of the present invention.
  • the first interface 608 has fewer oxygen vacancies than the second interface 610 , which remains Ohmic-like during switching.
  • the active part is the first interface 608 , which governs the electron transport of the switch 600 .
  • a positive bias of about 1.4 V 701 applied to the first electrode 604 drives the oxygen vacancies from the first interface 608 toward the second interface 610 and switches the device “off.”
  • the switch 600 in the “off” state is characterized by rectifying I-V curve 702 , in FIG. 7A .
  • a negative bias of approximately ⁇ 1.8 V 703 applied to the first electrode 608 attracts the oxygen vacancies to the first interface 608 , shunts the rectifier at the first interface 608 , and switches the device to a higher conductance state characterized by I-V curve 704 .
  • the device can actually be switched to multiple “on” states represented by I-V curves 705 - 707 and multiple “off” states represented by I-V curves 708 - 710 . Comparing with the first two “on” negative voltage sweeps, the last two “on” sweeps actually switch the device to a less conductive “on” states represented by I-V curves 709 and 710 in FIG. 7A .
  • FIG. 7B shows a circuit diagram representing the switching behavior of the switch during shunting switching in accordance with embodiments of the present invention.
  • a rectifier 712 is in parallel to a memristor 714 , whose polarity is indicated by a bar on one end.
  • a positive bias applied to the end of the memristor 714 with the bar switches the memristor 714 “on,” shunting the rectifier 712 .
  • An opposite bias switches the memristor 714 “off,” recovering the rectifier 712 .
  • the “on/off” conductance ratio is found to be about 10 3 for both microscale and nanoscale devices, while the nanoscale devices can be operated at about 100 times a lower current level than that of the microscale devices.
  • FIG. 7C shows a plot of curves corresponding to shunting switching in accordance with embodiments of the present invention.
  • I-V curve 716 corresponds to the switch in the “off” state
  • I-V curve 718 corresponds to the switch in the “on” state.
  • FIGS. 8A-8C represent experimental results obtained from opening switching of an approximately 5 ⁇ 5 ⁇ m 2 Pt/TiO 2 /Pt switch in accordance with embodiments of the present invention.
  • FIG. 8A shows a plot of the results for the opening switching.
  • the two interfaces 608 and 610 have asymmetric dopant distribution.
  • the more resistive first interface 608 (exposed to air for further oxidation before depositing the top electrode) remains Schottky-like or rectifying during switching and the active part is the second interface 610 .
  • a negative voltage bias of about ⁇ 8 V 801 from the first electrode 604 to the second electrode 606 drives positively charged oxygen vacancies away from the second interface interface 610 and switches the device “off.”
  • the I-V curves 802 - 804 reveal that the “off” state is resistive.
  • There are small loops 805 - 807 with a counterclockwise directions in the “off” sweep curves 808 - 810 reflecting a tiny “on” switching for the first interface 608 during the greater “off” switching of the second interface 610 .
  • An opposite bias of about 5 V 811 switches the second interface 610 into an Ohmic-like barrier and the electrical transport of the device is limited only by the rectifying first interface 608 , producing rectifying I-V curve 812 and 813 for the “on” state.
  • FIG. 8B shows a circuit diagram representing the switching behavior of the switch during opening switching in accordance with embodiments of the present invention.
  • the equivalent circuit for this opening switching is similar to that for Shunting switching except that an intrinsic rectifier is added in series, which appears to be an efficient means for adding a diode to each crossbar intersection memory cell in order to limit cross talk in a memory architecture.
  • the operating power is low for this type of device.
  • a 10 ⁇ 9 A current level can be expected for nanoscale devices based on the 10 ⁇ 6 A current used to switch the micro-scale device in FIG. 4B and the scalability observed in this device. This type of switching also exhibits a high reproducibility.
  • FIG. 8C shows a plot of I-V curves corresponding to opening switching in accordance with embodiments of the present invention.
  • a log-scale of the I-V curves for both “on” and “off” states are shown in FIG. 8C , exhibiting a roughly 10 3 conductance ratio.
  • I-V curve 814 corresponds to “on” state and I-V curve 816 corresponds to the “off” state.
  • FIGS. 9A-9C represent experimental results obtained from inverting switching of an approximately 50 ⁇ 50 nm 2 Pt/TiO 2 /Pt switch in accordance with embodiments of the present invention.
  • FIG. 9A shows a plot of the results for the inverting switching.
  • the distribution of oxygen vacancies within the active region 602 is symmetric and the oxygen vacancies changes at the two interfaces 608 and 610 takes place at approximately the same time but in opposite directions.
  • a positive bias about 4 V 901 is applied to the first electrode 604 , oxygen vacancies are driven away from the first interface 608 and attracted to the second interface 610 , resulting in more oxygen vacancies at the second interface 610 than at the first interface 608 .
  • the switch is switched to a rectifying state with a certain rectifying direction as shown by the checking I-V curves 902 and 904 .
  • Applying a negative bias of about ⁇ 4 V 905 reverses the oxygen vacancy profile across the active region 602 and switches the switch to a resistive state with an opposite rectifying direction, which is represented by I-V curves 906 and 908 .
  • FIG. 9B shows a circuit diagram representing the switching behavior of the switch during inverting switching in accordance with embodiments of the present invention.
  • the circuit diagram reveals that inverting switching can be accomplished by including two head-to-head shunting switches in series, as shown in FIG. 7B .
  • FIG. 9C shows a plot of I-V curves corresponding to inverting switching in accordance with embodiments of the present invention.
  • I-V curves 910 and 912 represent the forward and reverse rectifying states, respectively.
  • An oxygen vacancy is the only dopant used for the concept demonstration of the three the switching types described above.
  • other dopants e.g., C and N
  • dopants e.g., C and N
  • properties such as mobility, charge, and diffusivity

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110024714A1 (en) * 2009-07-30 2011-02-03 Wei Wu Nanoscale Three-Terminal Switching Device
US20110073828A1 (en) * 2009-09-30 2011-03-31 Qiangfei Xia Memristor amorphous metal alloy electrodes
US20110119036A1 (en) * 2009-11-17 2011-05-19 Pino Robinson E Method and apparatus for modeling memristor devices
US20110176353A1 (en) * 2008-12-23 2011-07-21 Zhiyong Li Memristive Device Having a Porous Dopant Diffusion Element
US20110228593A1 (en) * 2009-01-05 2011-09-22 Dmitri Strukov Memristive Device Based on Current Modulation by Trapped Charges
US20120104345A1 (en) * 2010-10-28 2012-05-03 Pickette Matthew D Memristive devices with layered junctions and methods for fabricating the same
CN102610752A (zh) * 2012-03-23 2012-07-25 清华大学深圳研究生院 三维无模浆料直写成型制造忆阻器的方法及忆阻器
US20140091274A1 (en) * 2012-09-28 2014-04-03 Young-Bae Kim Memory devices having unit cell as single device and methods of manufacturing the same
US8872246B1 (en) 2012-01-26 2014-10-28 Sandia Corporation Memristor using a transition metal nitride insulator
US20140361851A1 (en) * 2011-02-01 2014-12-11 Martin Anthony Keane Signal-processing devices having one or more memristors
US20150048299A1 (en) * 2013-08-19 2015-02-19 Postech Academy - Industry Foundation Two terminal switching device having bipolar switching property, method of fabricating the same, and resistive memory cross-point array having the same
US20150256178A1 (en) * 2014-03-09 2015-09-10 Technion Research And Development Foundation Ltd. Pure memristive logic gate
US20160020766A1 (en) * 2014-06-20 2016-01-21 Huazhong University Of Science And Technology Non-volatile boolean logic operation circuit and operation method thereof
WO2016072964A1 (en) * 2014-11-03 2016-05-12 Hewlett Packard Enterprise Development Lp Device with multiple resistance switches with different switching characteristics
US20170243645A1 (en) * 2014-11-25 2017-08-24 Hewlett-Packard Development Company, L.P. Bi-polar memristor
US10305484B2 (en) * 2017-09-08 2019-05-28 Board Of Regents, The University Of Texas System Memristor-based dividers using memristors-as-drivers (MAD) gates
US10318242B2 (en) 2017-09-08 2019-06-11 Board Of Regents, The University Of Texas System Memristor-based multipliers using memristors-as-drivers (MAD) gates
US10608180B2 (en) 2015-02-03 2020-03-31 Crossbar, Inc. Resistive memory cell with intrinsic current control
US10840442B2 (en) 2015-05-22 2020-11-17 Crossbar, Inc. Non-stoichiometric resistive switching memory device and fabrication methods

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102256964A (zh) * 2008-10-02 2011-11-23 瑞斯比维特有限公司 p38MAP激酶抑制剂
WO2010080079A1 (en) * 2009-01-06 2010-07-15 Hewlett-Packard Development Company, L.P. Memristor devices configured to control bubble formation
WO2010085226A1 (en) * 2009-01-26 2010-07-29 Hewlett-Packard Development Company, L.P. Using alloy electrodes to dope memristors
JP5604844B2 (ja) * 2009-10-02 2014-10-15 日本電気株式会社 記憶装置、及び記憶装置の動作方法
US8879300B2 (en) 2010-04-22 2014-11-04 Hewlett-Packard Development Company, L.P. Switchable two-terminal devices with diffusion/drift species
WO2012030320A1 (en) 2010-08-30 2012-03-08 Hewlett-Packard Development Company, L.P. Multilayer memory array
FR2969382B1 (fr) 2010-12-17 2022-11-18 Centre Nat Rech Scient Élément memristif et mémoire électronique basée sur de tels éléments
CN102346190A (zh) * 2011-01-24 2012-02-08 中国人民解放军第三军医大学 用于检测生物标本中的过氧化物还原酶ⅳ的双抗夹心elisa试剂盒及其方法与运用
CN102222688A (zh) * 2011-05-05 2011-10-19 湖南师范大学 一种双向可控整流阻变存储器
US8659929B2 (en) * 2011-06-30 2014-02-25 Crossbar, Inc. Amorphous silicon RRAM with non-linear device and operation
KR101537433B1 (ko) * 2011-08-24 2015-07-17 한양대학교 산학협력단 멤리스터 소자 및 이의 제조방법
JP6007701B2 (ja) * 2012-09-21 2016-10-12 富士通株式会社 抵抗変化型メモリ及びその駆動方法
KR102022419B1 (ko) * 2012-12-28 2019-11-04 에스케이하이닉스 주식회사 가변 저항 메모리 장치 및 그 동작 방법
CN110165048B (zh) * 2014-12-09 2022-11-01 塞姆特里克斯内存有限公司 具有掺杂的缓冲区的过渡金属氧化物电阻开关式器件
WO2016122472A1 (en) 2015-01-28 2016-08-04 Hewlett Packard Enterprise Development Lp Selector relaxation time reduction
US9379321B1 (en) 2015-03-20 2016-06-28 Intel Corporation Chalcogenide glass composition and chalcogenide switch devices
CN104934534A (zh) * 2015-05-19 2015-09-23 中国科学院宁波材料技术与工程研究所 一种生物神经突触仿生电子器件及其制备方法
KR20170113453A (ko) * 2016-03-31 2017-10-12 성균관대학교산학협력단 층상 유무기 복합 페로브스카이트를 이용한 멤리스터
KR102059556B1 (ko) * 2016-03-31 2019-12-26 성균관대학교산학협력단 Pb-free 유무기 복합 페로브스카이트를 이용한 멤리스터
CN106299114A (zh) * 2016-09-09 2017-01-04 中国科学院宁波材料技术与工程研究所 一种忆阻器
US11580285B2 (en) 2016-12-09 2023-02-14 Nokia Of America Corporation Reconfigurable integrated circuit and operating principle
JP6296464B2 (ja) * 2016-12-27 2018-03-20 国立研究開発法人物質・材料研究機構 多機能電気伝導素子の使用方法
US10164179B2 (en) * 2017-01-13 2018-12-25 International Business Machines Corporation Memristive device based on alkali-doping of transitional metal oxides
CN112998720B (zh) * 2021-01-29 2023-07-25 广东技术师范大学 一种智能预警可穿戴心率监测电路及其控制方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727525B1 (en) * 1999-07-03 2004-04-27 Robert Bosch Gmbh Diode comprising a metal semiconductor contact and a method for the production thereof
US20060171713A1 (en) * 2005-02-02 2006-08-03 Samsung Electronics Co., Ltd. Optical channel assigning system and method of assigning data to optical channels in optical network
US20080079029A1 (en) * 2006-10-03 2008-04-03 Williams R S Multi-terminal electrically actuated switch

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3503264A1 (de) * 1985-01-31 1986-08-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zur aenderung der lokalen, atomaren zusammensetzung von festkoerpern, insbesondere halbleitern
JP3571034B2 (ja) * 2002-06-18 2004-09-29 独立行政法人 科学技術振興機構 磁気抵抗ランダムアクセスメモリー装置
US7649496B1 (en) * 2004-10-12 2010-01-19 Guy Silver EM rectifying antenna suitable for use in conjunction with a natural breakdown device
DE102004056973A1 (de) * 2004-11-25 2006-06-01 Infineon Technologies Ag Herstellungsverfahren mit selbstjustierter Anordnung von Festkörperelektrolyt-Speicherzellen minimaler Strukturgröße
US8053947B2 (en) * 2005-12-14 2011-11-08 Kriisa Research, Inc. Device for converting thermal energy into electrical energy
JP4873448B2 (ja) 2006-01-06 2012-02-08 独立行政法人産業技術総合研究所 整流ダイオード

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727525B1 (en) * 1999-07-03 2004-04-27 Robert Bosch Gmbh Diode comprising a metal semiconductor contact and a method for the production thereof
US20060171713A1 (en) * 2005-02-02 2006-08-03 Samsung Electronics Co., Ltd. Optical channel assigning system and method of assigning data to optical channels in optical network
US20080079029A1 (en) * 2006-10-03 2008-04-03 Williams R S Multi-terminal electrically actuated switch
US20080090337A1 (en) * 2006-10-03 2008-04-17 Williams R Stanley Electrically actuated switch

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110176353A1 (en) * 2008-12-23 2011-07-21 Zhiyong Li Memristive Device Having a Porous Dopant Diffusion Element
US8780606B2 (en) * 2008-12-23 2014-07-15 Hewlett-Packard Development Company, L.P. Memristive device having a porous dopant diffusion element
US20110228593A1 (en) * 2009-01-05 2011-09-22 Dmitri Strukov Memristive Device Based on Current Modulation by Trapped Charges
US8891283B2 (en) * 2009-01-05 2014-11-18 Hewlett-Packard Development Company, L.P. Memristive device based on current modulation by trapped charges
US8270200B2 (en) * 2009-07-30 2012-09-18 Hewlett-Packard Development Company, L.P. Nanoscale three-terminal switching device
US20110024714A1 (en) * 2009-07-30 2011-02-03 Wei Wu Nanoscale Three-Terminal Switching Device
US20110073828A1 (en) * 2009-09-30 2011-03-31 Qiangfei Xia Memristor amorphous metal alloy electrodes
US8063395B2 (en) * 2009-09-30 2011-11-22 Hewlett-Packard Development Company, L.P. Memristor amorphous metal alloy electrodes
US8249838B2 (en) * 2009-11-17 2012-08-21 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for modeling memristor devices
US20110119036A1 (en) * 2009-11-17 2011-05-19 Pino Robinson E Method and apparatus for modeling memristor devices
US20120104345A1 (en) * 2010-10-28 2012-05-03 Pickette Matthew D Memristive devices with layered junctions and methods for fabricating the same
US9184382B2 (en) * 2010-10-28 2015-11-10 Hewlett-Packard Development Company, L.P. Memristive devices with layered junctions and methods for fabricating the same
US9344055B2 (en) * 2011-02-01 2016-05-17 John R. Koza Signal-processing devices having one or more memristors
US20140361851A1 (en) * 2011-02-01 2014-12-11 Martin Anthony Keane Signal-processing devices having one or more memristors
US8872246B1 (en) 2012-01-26 2014-10-28 Sandia Corporation Memristor using a transition metal nitride insulator
CN102610752A (zh) * 2012-03-23 2012-07-25 清华大学深圳研究生院 三维无模浆料直写成型制造忆阻器的方法及忆阻器
US20140091274A1 (en) * 2012-09-28 2014-04-03 Young-Bae Kim Memory devices having unit cell as single device and methods of manufacturing the same
US20150048299A1 (en) * 2013-08-19 2015-02-19 Postech Academy - Industry Foundation Two terminal switching device having bipolar switching property, method of fabricating the same, and resistive memory cross-point array having the same
US9178023B2 (en) * 2013-08-19 2015-11-03 Postech Academy—Industry Foundation Two terminal switching device having bipolar switching property, method of fabricating the same, and resistive memory cross-point array having the same
US20150256178A1 (en) * 2014-03-09 2015-09-10 Technion Research And Development Foundation Ltd. Pure memristive logic gate
US9685954B2 (en) * 2014-03-09 2017-06-20 Technion Research & Development Foundation Ltd. Pure memristive logic gate
US20160020766A1 (en) * 2014-06-20 2016-01-21 Huazhong University Of Science And Technology Non-volatile boolean logic operation circuit and operation method thereof
US9473137B2 (en) * 2014-06-20 2016-10-18 Huazhong University Of Science And Technology Non-volatile boolean logic operation circuit and operation method thereof
WO2016072964A1 (en) * 2014-11-03 2016-05-12 Hewlett Packard Enterprise Development Lp Device with multiple resistance switches with different switching characteristics
US20170243109A1 (en) * 2014-11-03 2017-08-24 Hewlett Packard Enterprise Development Lp Device with multiple resistance switches with different switching characteristics
US10970625B2 (en) 2014-11-03 2021-04-06 Hewlett Packard Enterprise Development Lp Device with multiple resistance switches with different switching characteristics
US10026476B2 (en) * 2014-11-25 2018-07-17 Hewlett-Packard Development Company, L.P. Bi-polar memristor
US20170243645A1 (en) * 2014-11-25 2017-08-24 Hewlett-Packard Development Company, L.P. Bi-polar memristor
US10608180B2 (en) 2015-02-03 2020-03-31 Crossbar, Inc. Resistive memory cell with intrinsic current control
US10840442B2 (en) 2015-05-22 2020-11-17 Crossbar, Inc. Non-stoichiometric resistive switching memory device and fabrication methods
US10305484B2 (en) * 2017-09-08 2019-05-28 Board Of Regents, The University Of Texas System Memristor-based dividers using memristors-as-drivers (MAD) gates
US10318242B2 (en) 2017-09-08 2019-06-11 Board Of Regents, The University Of Texas System Memristor-based multipliers using memristors-as-drivers (MAD) gates
US10447271B2 (en) * 2017-09-08 2019-10-15 Board Of Regents, The University Of Texas System Memristor-based dividers using memristors-as-drivers (MAD) gates
US10558431B2 (en) 2017-09-08 2020-02-11 Board Of Regents, The University Of Texas System Memristor-based multipliers using memristors-as-drivers (MAD) gates
US10608639B2 (en) * 2017-09-08 2020-03-31 Board Of Regents, The University Of Texas System Memristor-based dividers using memristors-as-drivers (MAD) gates

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CN102171829A (zh) 2011-08-31
CN102171829B (zh) 2014-01-15
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EP2311094A1 (en) 2011-04-20
JP5475776B2 (ja) 2014-04-16

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