US20090041182A1 - Illumination system for euv lithography - Google Patents
Illumination system for euv lithography Download PDFInfo
- Publication number
- US20090041182A1 US20090041182A1 US12/235,277 US23527708A US2009041182A1 US 20090041182 A1 US20090041182 A1 US 20090041182A1 US 23527708 A US23527708 A US 23527708A US 2009041182 A1 US2009041182 A1 US 2009041182A1
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- facet elements
- illumination
- partial
- illumination system
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
Definitions
- the disclosure relates to an illumination system for EUV lithography, as well as related elements, systems and methods.
- Illumination systems for EUV lithography are known.
- different illumination settings can be produced using displaceable field facet elements.
- the object surface is illuminated with a different distribution of illumination angles.
- the disclosure provides an illumination system, such as an illumination system for EUV lithography, with which it is possible to change between various illumination settings even when using an optical element with relatively few facet elements.
- the disclosure provides an illumination system in which at least two of the first facet elements are configured and oriented such that they are imaged by the optical arrangement in one and the same of at least two partial fields of the illumination field which make up the entire illumination field.
- An intersection between the partial fields, if such an intersection exists, is always being smaller than each of the partial fields contributing to the intersection.
- the illumination field is not absolutely necessary to reproduce all the first facet elements in one and the same image area, but that it is possible to configure the illumination field as an assembly of individual partial fields which together make up the complete illumination field. In so doing, the entire illumination field is not illuminated via any of the partial fields.
- This basic approach allows the second facet elements to be used in a more flexible manner. These second facet elements may be irradiated by a plurality of first facet elements which are at a spatial distance from one another. The partial beams of EUV radiation emanating from the various first facet elements which act on one and the same second facet element are then imaged in the various partial fields.
- This flexibility allows a second optical element with a relatively small number of second facet elements to be used to produce various illumination settings, while still allowing the production of an illumination setting, using a second optical element of this type, in which illumination setting a 1:1 assignment of the first and second facet elements is provided.
- Different illumination settings may therefore be produced without a loss of light and without exchanging optical components.
- a conventional setting, such as a homogeneous illumination of the second optical element may be produced while tightly filling the second optical element. Dividing the illumination field into at least two partial fields makes it possible to preset an EUV intensity profile in the displacement direction of the object.
- Displaceable first facet elements which are movable between various setting positions by actuators associated in each case with the selected first facet elements, and which, in each setting position, deflect the partial beam associated in each case therewith to produce one of the predetermined illumination settings, lead to the possibility of automatically changing between various illumination settings.
- the number of partial fields which corresponds to the maximum number of first facet elements which are able to act on the same second facet element, is at the same time the minimally desired number of partial fields.
- the result is a compact illumination field.
- Two, three or more first facet elements may be allocated to a second facet element to act thereon.
- the partial fields can be adjacent to one another, such as in a scan direction of a projection illumination installation, with the illumination system being the component thereof. This can help ensure that a substrate to be illuminated, for example a wafer which is scanned by the illumination field, passes the at least two partial fields in succession.
- Curved first facet elements and/or partial fields of the illumination system can reduce the restrictions made on the optical arrangement.
- Arranging the facet elements such that at least one of the second facet elements may be acted on by precisely two adjacent first facet elements can reduce restrictions on the imaging, which can avoid large angles between the individual partial beams of the EUV radiation.
- Second facet elements which may be displaced by an actuator associated in each case with the selected second facet elements for displacing the latter between various setting positions, increase the flexibility of the illumination system.
- An illumination system in which at least one of the group of first and second facet elements are configured as reflective elements can have low losses.
- An arrangement in which the number of the first facet elements is identical to the number of the second facet elements can allow a 1:1 assignment of the first facet elements to the second facet elements.
- Intersections between the partial fields of the illumination field which are less than 95% (e.g., less than 90%, less than 80%, less than 60%, less than 40%, less than 20%) of the smallest partial field contributing to the intersection, have proved to be advantageous for the practical realisation of the illumination system, such as for presetting a desired sequential illumination for the object surface.
- the disclosure provides a first as well as a second optical element for the illumination system.
- FIG. 1 schematically the beam path in an illumination system for EUV microlithography
- FIG. 2 schematically components of the illumination system according to FIG. 1 with the second facet elements illuminated to prepare a homogeneous, conventional illumination setting;
- FIG. 3 a view similar to that of FIG. 2 with the second face elements illuminated to prepare an annular setting of a large diameter;
- FIG. 4 a view similar to that of FIG. 2 with the second facet elements illuminated to prepare a homogeneous illumination setting with small illumination angles compared to the illumination setting of FIG. 2 ;
- FIG. 5 a view similar to that of FIG. 2 with second facet elements illuminated to prepare an illumination setting in the manner of an x-dipole;
- FIG. 6 a view similar to that of FIG. 2 with the second facet elements illuminated to prepare an illumination setting in the manner of a y-dipole;
- FIG. 7 a view similar to that of FIG. 3 having curved first facet elements
- FIG. 8 a view similar to that of FIG. 2 having a different magnification
- FIG. 9 a view similar to that of FIG. 3 .
- FIG. 1 shows an illumination system 1 for illuminating a predetermined illumination field 2 of an object surface 3 with extreme ultraviolet (EUV) radiation 4 .
- EUV extreme ultraviolet
- a plasma source can be used as the source 5 for the EUV radiation 4 .
- the wavelength of the EUV radiation is, for example, between 10 and 20 nm.
- FIGS. 1 and 2 A Cartesian coordinate system (x, y, z) is used in FIGS. 1 and 2 , reference being made hereinafter to the coordinates (x, y, z).
- the x direction extends perpendicularly to the plane of projection
- the y direction extends to the right-hand side
- the z direction extends downwards.
- the EUV radiation emitted from the source 5 is initially collected by a collector 6 which reflects the EUV radiation like all the following steel guide components.
- the EUV radiation 4 emitted from the source 5 impinges on a first optical element 7 , also termed a field scanning element.
- the first optical element 7 is used to produce secondary light sources in the illumination system 1 .
- a reflecting surface of the first optical element 7 , on which the EUV radiation 4 impinges, is divided into a plurality of first facet elements, of which four first facet elements 8 to 11 are shown by way of example in FIG. 1 .
- the latter are associated with partial beams 12 to 15 of the EUV radiation 4 .
- the first facet elements are rectangular, the extent thereof being substantially greater in the x direction than in the y direction.
- a typical aspect ratio of the first face elements 8 to 11 (x:y) is 20:1.
- Each of the first facet elements 8 to 11 may be tilted between various setting positions about axes parallel to the x direction and y direction.
- each of the first facet elements 8 to 11 is connected to an associated actuator.
- an exemplary actuator 16 is shown which, as indicated in dashed lines at 17 , is mechanically connected to the first facet element 11 for tilting the facet element 11 selectively about one of the two axes (x/y).
- the actuator 16 is connected to a central control device 19 via a control line 18 .
- the control device 19 is connected with all the other actuators associated with the first facet elements 8 to 11 and with the first facet elements which are not shown via corresponding control lines (not shown).
- a second optical element 20 also termed a pupil scanning element, is positioned at the location of the secondary light sources generated by the first optical element 7 , generally in an image plane of the source 5 .
- the EUV radiation 4 impinges the second optical element 20 via the first optical element 7 .
- the surface of the second optical element 20 impacted by the EUV radiation 4 is divided into a plurality of second facet elements, of which four facet elements 21 to 24 are shown by way of example in FIG. 1 .
- the second facet elements 21 to 24 are each assigned to one of the first facet elements 8 to 11 , so that a respective secondary light source is generated at the location of the respectively charged second facet elements 21 to 24 .
- the second facet element 21 is assigned to the first facet element 8
- the second facet element 23 is assigned to the first facet element 9
- the second facet element 22 is assigned to the first facet element 10
- the second facet element 24 is assigned to the first facet element 11 .
- FIG. 1 schematically shows an exemplary actuator 25 which is associated with the second facet element 21 and which, as shown in dashed lines at 26 , is mechanically connected to the second facet element 21 to tilt the second facet element 21 .
- the actuator 25 is also in a signal connection with the control device 19 via a control line 18 .
- the first facet elements as well as the second facet elements are typically reflective elements.
- the second optical element 20 is part of an optical arrangement 27 which includes a plurality of optical components and forms an image of the first optical element 7 in a plane 30 predetermined by the object surface 3 .
- Two other reflecting elements 28 , 29 for EUV radiation belong to the optical arrangement 27 .
- the reflecting element 28 is downstream of the second optical element 20 and reflects the EUV radiation at a small angle of incidence, for example an incidence angle of 30°.
- the reflecting element 29 is positioned in the subsequent beam path of EUV radiation 4 and reflects the EUV radiation by glancing incidence.
- FIG. 2 shows in a highly schematic manner allocation relations between the first and the second facet elements during image formation in the illumination field 2 .
- the plane of projection of FIG. 2 is parallel to the x-y plane, and this also applies to the planes of projection of the following FIG. 3 to 9 .
- the components shown in FIGS. 2 to 9 have been rotated into the x-y plane. These components may in practice also be oriented in a different way. Components in FIGS. 2 to 9 which are the same as those which have already been described above with reference to FIG. 1 , have the same reference numerals and will not be described again in detail.
- FIG. 2 shows the four facet elements 8 to 11 as representative of all the first facet elements of the first optical element 7 .
- the second facet elements 21 to 24 are arranged as follows in FIG. 2 for illustration purposes where the second facet elements 21 and 24 are components of an inner ring made of second facet elements.
- the second facet elements 22 and 23 are components of an outer ring of second facet elements.
- the overall round second optical element 20 has a plurality of such concentrically arranged rings of second facet elements.
- the second facet elements may be arranged in the manner of an evenly distributed x/y raster.
- FIG. 15 of US 2003/0086524 A1 provides an example of this.
- the allocation of the first facet elements 8 to 11 to the second facet elements 21 to 24 is such that it produces a homogeneous, conventional illumination setting. Together with other second facet elements which are not shown, all the second facet elements of the second optical element 20 (not only the illustrated second facet elements 21 to 24 , but also all other second facet elements of the associated raster) are illuminated by a respective first facet element. The second optical element 20 is thus illuminated homogeneously.
- the first facet elements 8 and 10 are configured and oriented in such a manner that they are imaged in a lower partial field 31 of the illumination field 2 by the optical arrangement 27 in the arrangement of FIG. 2 .
- the first facet elements 9 and 11 are configured and oriented in such a manner that they are imaged in the upper partial field 32 of the illumination field 2 by the optical arrangement 27 .
- the two partial fields 31 , 32 have the same surface area.
- the partial fields 31 , 32 have the same aspect ratio as the first facet elements 8 to 11 .
- the two partial fields 31 , 32 are slightly curved arcuately due to the imaging properties of the optical arrangement 27 .
- the two partial fields 31 , 32 make up the complete illumination field 2 . In the idealised example shown in FIG.
- the two partial fields 31 , 32 are immediately adjacent to one another, without overlapping.
- the two partial fields 31 , 32 can overlap in such a manner that the intersection of the two partial fields 31 , 32 (the overlap region) is always smaller than the area of each partial field 31 , 32 .
- the first facet elements 8 to 11 are imaged in the image plane 30 with a negative magnification.
- the division of the illumination field 2 into the two partial fields 31 , 32 results in a portion of every second facet element being illuminated in each of the partial fields 31 , 32 , so that in each partial field, illumination takes place at selected illumination angles of all illumination angles which are present in the illumination setting according to FIG. 2 .
- Only a superpositioning of both partial fields 31 , 32 results in the object surface 3 being illuminated at all illumination angles of the illumination setting. This superpositioning is carried out by displacing the object surface 3 in the y direction. This displacement may be carried out continuously or in steps, in which case a step length should not be greater than the y extent of a partial field.
- each point on the object surface 3 which point passes through both partial fields 31 , 32 , integrates the exposure effect of the EUV radiation radiated therein, so that following the passage, an illumination has been carried out from all illumination angles possible in the illumination setting.
- FIG. 3 shows another illumination setting which is possible with the arrangement of FIG. 1 .
- This illumination setting is sometimes called a large annular setting.
- this large annular setting is set by tilting the first facet element 8 about its longitudinal axis parallel to the x direction and by tilting the second facet element 11 about its longitudinal axis parallel to the y direction.
- the first facet element 8 now acts on the second facet element 23 and the first facet element 11 acts on the second facet element 22 .
- the second facet element 22 is thus associated with two first facet elements, more specifically the first facet elements 10 and 11 .
- the second facet element 23 is associated with the first facet elements 8 and 9 .
- the second facet elements 22 , 23 are arranged in such a manner that in the illumination setting according to FIG. 3 , they are thus acted on respectively by two different adjacent first facet elements, more specifically on the one hand the first facet elements 10 and 11 and on the other hand by the first facet element 8 , 9 .
- the second facet elements 21 , 24 are not acted on by the first optical element 7 .
- the lower partial field 31 is impacted by radiation from the first facet element 8 and 10 .
- the upper partial field 32 is impacted by radiation from the first facet elements 9 and 11 .
- the illumination angle varies between a minimum illumination angle different from zero and a maximum illumination angle.
- FIG. 4 shows another illumination setting which may be produced with the arrangement according to FIGS. 1 and 2 . This is sometimes call a small conventional setting with a maximum illumination angle which is smaller than the minimum illumination angle of the annular setting according to FIG. 3 .
- FIG. 4 Compared to the setting of FIG. 2 , in FIG. 4 the two first facet elements 9 and 10 are tilted in the x and y direction respectively.
- the first facet element 9 together with the first facet element 8 now acts on the second facet element 21 .
- the first facet element 10 together with the first facet element 11 , now impacts on the second facet element 24 .
- the second facet elements 22 , 23 are not acted on by the first optical element 7 .
- the lower partial field 31 is impacted by radiation from the first facet elements 8 and 10 .
- the upper partial field 32 is impacted by radiation from the first facet elements 9 and 11 .
- FIG. 5 shows another illumination setting which may be produced with the arrangement according to FIGS. 1 and 2 .
- This is an illumination setting in the manner of what is sometimes called an x-dipole.
- illumination takes place in the x-z plane over a range of illumination angles which corresponds to the conventional setting according to FIG. 2 .
- Perpendicularly in the y-z plane, illumination takes place in a region of smaller illumination angles which may increase outwardly.
- the beam path starting from the first facet elements 10 , 11 , corresponds to the beam path of the setting according to FIG. 3 .
- the radiation emanating from the first facet elements 8 and 9 jointly impacts the second facet element 24 .
- the radiation emanating from the first facet element 8 is imaged in the lower partial field 31
- the radiation emanating from the first facet element 9 is imaged in the upper partial field 32 .
- the second facet element 24 can be tilted to ensure that the radiation emanating from the first facet elements 8 and 9 is in fact correctly imaged in the illumination field 2 .
- FIG. 6 shows another illumination setting which may be produced in the arrangement according to FIGS. 1 and 2 .
- This illumination setting is sometimes called y-dipole mode.
- the illumination angles in the illumination field are distributed in the setting of FIG. 6 in such a manner that there is an angle distribution in the y-z plane as in the conventional setting according to FIG. 2 , and there is an illumination angle distribution in the x-z plane which corresponds to that in the y-z plane of the setting according to FIG. 5 .
- the first facet elements 8 , 10 and 11 should be tilted and also the second facet element 21 should be tilted so that the radiation emanating from the first facet elements 10 , 11 is correctly imaged in the illumination field 2 .
- the first facet elements 8 , 9 jointly eradiate the second facet element 23 and the first facet elements 10 , 11 jointly eradiate the second facet element 21 .
- FIG. 7 shows an illumination system like the illumination system of FIGS. 1 and 2 , adjusted to an illumination setting like the setting of FIG. 3 .
- Components corresponding to those which have already been described above with reference to FIG. 1 to 6 have the same reference numerals and will not be described again in detail.
- the first optical element 7 of the arrangement according to FIG. 7 has slightly arcuately curved first facet elements 8 to 11 .
- the curved first facet elements 8 to 11 are imaged in the curved partial fields 31 , 32 by the optical arrangement 27 .
- FIGS. 8 and 9 show an illumination system. Components which correspond to those already described above with reference to FIG. 1 to 7 have the same reference numerals and are not described again in more detail.
- the optical arrangement 27 according to FIGS. 8 and 9 has a positive magnification.
- the second optical element 20 as well other reflective elements like the elements 28 and 29 (not shown) belong to the optical arrangement 27 .
- the first facet elements 9 and 11 are imaged in the lower partial field 31 of the illumination field 2 .
- the first facet elements 8 and 10 are imaged in the upper partial field 32 .
- FIG. 8 shows a conventional setting corresponding to that of FIG. 2 .
- the first facet element 8 is associated with the second facet element 23
- the first facet element 9 is associated with the second facet element 21
- the first facet element 10 is associated with the second facet element 22
- the first facet element 11 is associated with the second facet element 24 .
- FIG. 9 shows another illumination setting produced by tilting the first facet elements 9 and 11 , so that a large annular setting like the setting of FIG. 3 is produced.
- the second facet element 23 is jointly acted on by the two first facet elements 8 and 9 .
- the second facet element 22 is jointly acted on by the two first facet elements 10 and 11 .
- the illumination system 1 is part of a projection illumination installation for microlithography, with which an object having the object surface (e.g., a mask or a reticle) is imaged on a wafer to produce integrated components, for example microprocessors or memory chips.
- object having the object surface e.g., a mask or a reticle
- integrated components for example microprocessors or memory chips.
- the first optical element 7 may be configured such that only specific first facet elements may be tilted by actuators, while other first facet elements are stationary.
- the second optical element 20 may also be equipped accordingly with tiltable and stationary second facet elements. It also possible to equip the second optical element 20 in general with stationary second facet elements, in other words, not to provide a tilting option there.
- the number of first facet elements of the first optical element 7 is identical to the number of the second facet elements of the second optical element 20 .
- the number of facet elements of the second optical element 20 is greater or smaller than the number of the first facet elements of the first optical element.
- first facet elements 8 to 11 are associated with the second facet elements 21 to 24 , it is possible for more than two first facet elements to be associated in each case with a second facet element.
- the minimum number of the partial fields constructing the illumination field can increase accordingly.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US14/489,943 US9671608B2 (en) | 2006-05-04 | 2014-09-18 | Illumination system for EUV lithography |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102006020734.3 | 2006-05-04 | ||
DE102006020734A DE102006020734A1 (de) | 2006-05-04 | 2006-05-04 | Beleuchtungssystem für die EUV-Lithographie sowie erstes und zweites optisches Element zum Einsatz in einem derartigen Beleuchtungssystem |
PCT/EP2007/003609 WO2007128407A1 (fr) | 2006-05-04 | 2007-04-25 | systÈme d'Éclairage pour lithographie EUV ET premier et second ÉlÉmentS optiqueS À utilisER dans un système d'ECLAIRAGE de ce type |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/EP2007/003609 Continuation WO2007128407A1 (fr) | 2006-05-04 | 2007-04-25 | systÈme d'Éclairage pour lithographie EUV ET premier et second ÉlÉmentS optiqueS À utilisER dans un système d'ECLAIRAGE de ce type |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US14/489,943 Continuation US9671608B2 (en) | 2006-05-04 | 2014-09-18 | Illumination system for EUV lithography |
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US20090041182A1 true US20090041182A1 (en) | 2009-02-12 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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US12/235,277 Abandoned US20090041182A1 (en) | 2006-05-04 | 2008-09-22 | Illumination system for euv lithography |
US14/489,943 Expired - Fee Related US9671608B2 (en) | 2006-05-04 | 2014-09-18 | Illumination system for EUV lithography |
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US14/489,943 Expired - Fee Related US9671608B2 (en) | 2006-05-04 | 2014-09-18 | Illumination system for EUV lithography |
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US (2) | US20090041182A1 (fr) |
EP (1) | EP2013663A1 (fr) |
JP (2) | JP4970533B2 (fr) |
DE (1) | DE102006020734A1 (fr) |
TW (1) | TWI414896B (fr) |
WO (1) | WO2007128407A1 (fr) |
Cited By (15)
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US20100261120A1 (en) * | 2009-04-09 | 2010-10-14 | Carl Zeiss Smt Ag | Mirror for guiding a radiation bundle |
EP2333611A1 (fr) * | 2009-12-11 | 2011-06-15 | Carl Zeiss SMT GmbH | Unité optique d'éclairage pour microlithographie EUV |
US20110177463A1 (en) * | 2008-09-30 | 2011-07-21 | Carl Zeiss Smt Gmbh | Illumination system for euv microlithography |
CN102193334A (zh) * | 2010-03-17 | 2011-09-21 | 卡尔蔡司Smt有限责任公司 | 用于投射光刻的照明光学系统 |
US20120224161A1 (en) * | 2011-03-02 | 2012-09-06 | Asml Netherlands B.V. | Lithographic Apparatus and Method |
US20130088698A1 (en) * | 2008-10-08 | 2013-04-11 | Carl Zeiss Smt Gmbh | Methods and devices for driving micromirrors |
WO2013139635A1 (fr) * | 2012-03-19 | 2013-09-26 | Carl Zeiss Smt Gmbh | Unité optique d'éclairage pour lithographie par projection d'ultraviolets extrêmes |
DE102013203364A1 (de) | 2013-02-28 | 2014-09-11 | Carl Zeiss Smt Gmbh | Reflektierende Beschichtung mit optimierter Dicke |
DE102013202948A1 (de) | 2013-02-22 | 2014-09-11 | Carl Zeiss Smt Gmbh | Beleuchtungssystem für eine EUV-Lithographievorrichtung und Facettenspiegel dafür |
US20150036115A1 (en) * | 2012-05-15 | 2015-02-05 | Carl Zeiss Smt Gmbh | Illumination optical unit for euv projection lithography |
DE102013218749A1 (de) | 2013-09-18 | 2015-03-19 | Carl Zeiss Smt Gmbh | Beleuchtungssystem sowie Beleuchtungsoptik für die EUV-Projektionslithografie |
US9063336B2 (en) | 2009-12-17 | 2015-06-23 | Carl Zeiss Smt Gmbh | Optical element having a plurality of reflective facet elements |
US20150198892A1 (en) * | 2012-11-29 | 2015-07-16 | Carl Zeiss Smt Gmbh | Arrangement for actuating at least one optical element in an optical system |
US9671608B2 (en) | 2006-05-04 | 2017-06-06 | Carl Zeiss Smt Gmbh | Illumination system for EUV lithography |
TWI718103B (zh) * | 2014-09-03 | 2021-02-11 | 德商卡爾蔡司Smt有限公司 | 用於投影微影的照明光學總成 |
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DE102009000099A1 (de) | 2009-01-09 | 2010-07-22 | Carl Zeiss Smt Ag | Mikrospiegelarray mit Doppelbiegebalken Anordnung und elektronischer Aktorik |
DE102008001511A1 (de) * | 2008-04-30 | 2009-11-05 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik |
DE102008049586A1 (de) | 2008-09-30 | 2010-04-08 | Carl Zeiss Smt Ag | Feldfacettenspiegel zum Einsatz in einer Beleuchtungsoptik einer Projektionsbelichtungsanlage für die EUV-Mikrolithographie |
DE102008049585A1 (de) | 2008-09-30 | 2010-04-08 | Carl Zeiss Smt Ag | Feldfacettenspiegel zum Einsatz in einer Beleuchtungsoptik einer Projektionsbelichtungsanlage für die EUV-Mikrolithographie |
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DE102017202653A1 (de) | 2017-02-20 | 2018-08-23 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die Halbleiterlithographie mit verbessertem Wärmeübergang |
DE102017202799A1 (de) | 2017-02-21 | 2017-04-13 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die Halbleiterlithographie mit verbesserten Signalanschlüssen |
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US10748671B2 (en) | 2018-07-10 | 2020-08-18 | Globalfoundries Inc. | Radial lithographic source homogenizer |
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DE102021205149B3 (de) | 2021-05-20 | 2022-07-07 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zur Qualifizierung eines Facettenspiegels |
KR20230037817A (ko) | 2021-09-10 | 2023-03-17 | 주식회사 이솔 | 다층막 반사형 존플레이트를 이용한 euv용 조명 장치 및 그 제조방법 |
KR20230054028A (ko) * | 2021-10-15 | 2023-04-24 | 주식회사 이솔 | 다층막 반사형 존플레이트를 이용한 euv 마스크 검사장치 |
KR20230054027A (ko) | 2021-10-15 | 2023-04-24 | 주식회사 이솔 | Euv 마스크 및 euv 팰리클의 반사도와 투과도 측정장치 |
KR20240007006A (ko) | 2022-07-07 | 2024-01-16 | 주식회사 이솔 | 프리폼 조명계가 구현된 고성능 euv 현미경 장치 |
DE102022210132A1 (de) | 2022-09-26 | 2022-12-01 | Carl Zeiss Smt Gmbh | Komponente für eine Projektionsbelichtungsanlage für die Halbleiterlithografie und Verfahren zur Herstellung der Komponente |
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US9671608B2 (en) | 2006-05-04 | 2017-06-06 | Carl Zeiss Smt Gmbh | Illumination system for EUV lithography |
US20110177463A1 (en) * | 2008-09-30 | 2011-07-21 | Carl Zeiss Smt Gmbh | Illumination system for euv microlithography |
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US10061202B2 (en) * | 2008-10-08 | 2018-08-28 | Carl Zeiss Smt Gmbh | Methods and devices for driving micromirrors |
US20100261120A1 (en) * | 2009-04-09 | 2010-10-14 | Carl Zeiss Smt Ag | Mirror for guiding a radiation bundle |
US8717531B2 (en) | 2009-04-09 | 2014-05-06 | Carl Zeiss Smt Gmbh | Mirror for guiding a radiation bundle |
US20110141445A1 (en) * | 2009-12-11 | 2011-06-16 | Carl Zeiss Smt Gmbh | Illumination optical unit for euv microlithography |
EP2333611A1 (fr) * | 2009-12-11 | 2011-06-15 | Carl Zeiss SMT GmbH | Unité optique d'éclairage pour microlithographie EUV |
US8395754B2 (en) * | 2009-12-11 | 2013-03-12 | Carl Zeiss Smt Gmbh | Illumination optical unit for EUV microlithography |
US9063336B2 (en) | 2009-12-17 | 2015-06-23 | Carl Zeiss Smt Gmbh | Optical element having a plurality of reflective facet elements |
US8817233B2 (en) * | 2010-03-17 | 2014-08-26 | Carl Zeiss Smt Gmbh | Illumination optical system for projection lithography |
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KR101854465B1 (ko) * | 2010-03-17 | 2018-05-03 | 칼 짜이스 에스엠티 게엠베하 | 투영 리소그라피용 조명 광학 시스템 |
CN102193334A (zh) * | 2010-03-17 | 2011-09-21 | 卡尔蔡司Smt有限责任公司 | 用于投射光刻的照明光学系统 |
US20120224161A1 (en) * | 2011-03-02 | 2012-09-06 | Asml Netherlands B.V. | Lithographic Apparatus and Method |
US9612537B2 (en) | 2012-03-19 | 2017-04-04 | Carl Zeiss Smt Gmbh | Illumination optical unit for EUV projection lithography |
WO2013139635A1 (fr) * | 2012-03-19 | 2013-09-26 | Carl Zeiss Smt Gmbh | Unité optique d'éclairage pour lithographie par projection d'ultraviolets extrêmes |
US9280061B2 (en) | 2012-03-19 | 2016-03-08 | Carl Zeiss Smt Gmbh | Illumination optical unit for EUV projection lithography |
US20150036115A1 (en) * | 2012-05-15 | 2015-02-05 | Carl Zeiss Smt Gmbh | Illumination optical unit for euv projection lithography |
US10126658B2 (en) * | 2012-05-15 | 2018-11-13 | Carl Zeiss Smt Gmbh | Illumination optical unit for EUV projection lithography |
US10303065B2 (en) | 2012-11-29 | 2019-05-28 | Carl Zeiss Smt Gmbh | Arrangement for actuating at least one optical element in an optical system |
US20150198892A1 (en) * | 2012-11-29 | 2015-07-16 | Carl Zeiss Smt Gmbh | Arrangement for actuating at least one optical element in an optical system |
US9665011B2 (en) * | 2012-11-29 | 2017-05-30 | Carl Zeiss Smt Gmbh | Arrangement for actuating at least one optical element in an optical system |
DE102013202948A1 (de) | 2013-02-22 | 2014-09-11 | Carl Zeiss Smt Gmbh | Beleuchtungssystem für eine EUV-Lithographievorrichtung und Facettenspiegel dafür |
US9551941B2 (en) | 2013-02-22 | 2017-01-24 | Carl Zeiss Smt Gmbh | Illumination system for an EUV lithography device and facet mirror therefor |
DE102013203364A1 (de) | 2013-02-28 | 2014-09-11 | Carl Zeiss Smt Gmbh | Reflektierende Beschichtung mit optimierter Dicke |
US10146136B2 (en) | 2013-02-28 | 2018-12-04 | Carl Zeiss Smt Gmbh | Reflecting coating with optimized thickness |
US9921484B2 (en) * | 2013-09-18 | 2018-03-20 | Carl Zeiss Smt Gmbh | Illumination system and illumination optical unit for EUV projection lithography |
DE102013218749A1 (de) | 2013-09-18 | 2015-03-19 | Carl Zeiss Smt Gmbh | Beleuchtungssystem sowie Beleuchtungsoptik für die EUV-Projektionslithografie |
US20160195816A1 (en) * | 2013-09-18 | 2016-07-07 | Carl Zeiss Smt Gmbh | Illumination system and illumination optical unit for euv projection lithography |
TWI718103B (zh) * | 2014-09-03 | 2021-02-11 | 德商卡爾蔡司Smt有限公司 | 用於投影微影的照明光學總成 |
Also Published As
Publication number | Publication date |
---|---|
JP2009535827A (ja) | 2009-10-01 |
TW200801843A (en) | 2008-01-01 |
JP2012178573A (ja) | 2012-09-13 |
TWI414896B (zh) | 2013-11-11 |
JP5543516B2 (ja) | 2014-07-09 |
DE102006020734A1 (de) | 2007-11-15 |
US20150002925A1 (en) | 2015-01-01 |
EP2013663A1 (fr) | 2009-01-14 |
WO2007128407A1 (fr) | 2007-11-15 |
US9671608B2 (en) | 2017-06-06 |
JP4970533B2 (ja) | 2012-07-11 |
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