WO2011154244A1 - Système optique d'éclairage pour lithographie par projection uve - Google Patents

Système optique d'éclairage pour lithographie par projection uve Download PDF

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Publication number
WO2011154244A1
WO2011154244A1 PCT/EP2011/058418 EP2011058418W WO2011154244A1 WO 2011154244 A1 WO2011154244 A1 WO 2011154244A1 EP 2011058418 W EP2011058418 W EP 2011058418W WO 2011154244 A1 WO2011154244 A1 WO 2011154244A1
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WIPO (PCT)
Prior art keywords
facets
switch
facet
illumination
tilting
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PCT/EP2011/058418
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English (en)
Inventor
Michael Patra
Olaf Dittmann
Marc Kirch
Martin Endres
Markus Walter
Stig Bieling
Sebastian Dörn
Original Assignee
Carl Zeiss Smt Gmbh
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Application filed by Carl Zeiss Smt Gmbh filed Critical Carl Zeiss Smt Gmbh
Publication of WO2011154244A1 publication Critical patent/WO2011154244A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection

Definitions

  • German patent application DE 10 2010 029 765.8 and US- Provisional patent application US 61/352 459 is incorporated by reference.
  • the invention relates to an illumination optical system for EUV projection lithography for illuminating an illumination field, in which an object field of a following imaging optical system can be arranged. Furthermore, the invention relates to methods for predetermining switch-off tilting positions of first facets of a first facet mirror of an illumination optical system of this type, a device for carrying out and monitoring a method of this type, an illumination system with an illumination optical system of this type, a projection exposure system with an illumination system of this type, a production method for microstructured or nanostructured components using a projection exposure system of this type and a microstructured or nanostructured component produced by a production method of this type.
  • Illumination optical systems with first facets which can be displaced between various illumination tilting positions, namely displaceable field facets, are known from US 6,658,084 B2 and US 7,196,841 B2.
  • An object of the present invention is to develop an illumination optical system of the type mentioned at the outset in such a way that a fine adjustment of illumination settings to be predetermined to illuminate the illumination field is possible, in other words a fine specification of a distribution of illumination angles, with which the illumination field is illuminated.
  • This object is achieved according to the invention by an illumination optical system with the features disclosed in claim 1.
  • first facets can also be used to displace the first facets between an illumination tilting position and a switch-off tilting position. At first sight, this firstly leads to EUV illumination light, which is guided over first facets, which are present in the switch-off tilting position, not being available to illuminate the illumination field. It was recognised that this loss of illumination light is overcompensated by the possibility of a fine adjustment of an illumination angle specification provided by the targeted switching off of first facets. By switching off first facets, an additional degree of freedom is available when specifying, in particular, illumination angle distributions to illuminate the illumination field.
  • the first facets may be field facets of a field facet mirror of the illumination optical system.
  • the second facets may be pupil facets of a pupil facet mirror of the illumination optical system.
  • Illumination optical systems with a field facet mirror of this type and a pupil facet mirror of this type are known from US 6,658,084 B2 and US 7,196,841 B2. All the first facets may be tiltable between at least one illumination tilting position and a switch-off tilting position.
  • part of the first facets may also be designed to be tiltable in this manner.
  • Switched-off part bundles may be used to monitor a function of the illumination optical system.
  • the switching off of the first facets may be used to correct illumination parameters, which are to be present in an illumination of the object field within specific specifications. Examples of illumination parameters of this type are telecentric and/or uniformity values. A definition of the parameters, telecentry and uniformity, is found in DE 10 2008 007 449 Al .
  • the targeted switching off of first facets can be used to correct illumination parameters, in that the illumination parameter to be corrected is firstly measured, for example by means of a detection device arranged in the object field and the effects of the targeted switching- off of field facets on the illumination parameter to be corrected are then measured again.
  • the effects of the targeted switching-off of first facets and a changed illumination field illumination resulting therefrom can be checked by a simulation of a development behaviour of a light-sensitive layer in an image field, in which the object field is to be imaged.
  • An illumination with a set of switch-off field facets then takes place in which the specification values for the illumination parameters are achieved.
  • the switched-off part bundle is guided via the switch-off beam path in a defined manner over the switch-off facet and can then be guided away, for example controlled by a light trap and without undesired scattering, into the object field.
  • the first facet and the at least one switch-off facet are not allocated to the same object field illumination channel, it is ensured that the part bundle is not guided over the switch-off facet undesirably in the direction of the object field.
  • the first facet is, in this case, with a different second facet to the switch-off facet, allocated to a first object field orientation channel and the switch-off facet allocated to this first facet via the switch-off beam path is allocated via another second object field illumination channel to another first facet.
  • the switch-off facet is one of the second facets, which is used to illuminate the object field along a different object field illumination channel than the first facet, in the switch-off tilting position of which the part bundle is guided in the direction of the switch-off facet.
  • the bundle guidance over the first facet in the switch-off tilting position and subsequently over the switch-off facet therefore certainly is not an object field illumination channel, so the part bundle guided in this manner specifically does not reach the object field.
  • a second facet required in any case for an object field illumination channel can also be used as a switch-off facet, so no additional second facets only used to switch off the part bundle are required.
  • the switch-off facets therefore have both the function of bundle guidance via an object field illumination channel to the object field and also of controlled bundle guidance for switching off away from the object field.
  • the part bundle which is guided via the switch-off beam path, may, for example, reach the object plane spaced apart from the object field by more than a typical extent of the object field. A spacing by more than twice a typical object field dimension or by an even greater value is also possible.
  • An illumination optical system combines the advantages of a switch-off possibility of the first facets with the advantages of a switch over between various object field illumination channels such as, for example, disclosed in US 6,658,084 B2 and US 7,196,841 B2.
  • the first facets can then be tilted by choice into one of three tilting positions, namely into one of two illumination tilting positions and additionally into the switch-off tilting position.
  • the specification of a plurality of switch-off tilting positions may be possible, it then being possible for the switch-off tilting position to actually be predetermined to be predetermined in a controlled manner.
  • a method according to claim 4 eliminates those switch-off tilting positions which, for example, because of an adjacent guidance to object field illumination channels could undesirably lead to stray light or scattered light.
  • This method assumes that at least some of the first facets can be tilted into a plurality of switch-off tilting positions.
  • the scattered light fraction predetermined as the upper limit may be predetermined depending on the sensitivity of a structure imaging of the imaging to be carried out with the imaging optical system.
  • the method is based on a predetermined geometric arrangement of the facets of the first facet mirror and the facets of the second facet mirror and a predetermined positioning of an illumination light source and maximally achievable tilting angles of the tiltable first facets.
  • the possible switch-off tilting positions of the first facets and optionally their allocation to switch-off facets of the second facet mirror may be stored in a table form in the memory of a computer processing the method in program form.
  • the impingement of the candidate switch-off facets via the switch-off beam paths can take place by simulation in an optical design module of the program processing the method.
  • a predetermined scattered light fraction which may not be exceeded during the elimination step, may also be stored as a program parameter.
  • the extended method according to claim 5 avoids an undesirably high thermal loading of the second facets.
  • sets of switch-off tilting positions are avoided, in which too many part bundles would lead via switch-off beam paths to the impingement of one and the same second facet above a predetermined thermal limit load.
  • a random selection may be made from the sets of switch-off tilting positions firstly possible in principle.
  • the predetermined limit fraction of the switch-off facets, which are to be impinged on by not more than a predetermined limit number of part bundles may be 80 %, 85 %, 90 %, 95 %, 98 %, 99 % or a still greater fraction of all the switch-off facets.
  • the predetermined limit number of part bundles may be two part bundles, three part bundles, four part bundles, five part bundles or a still higher number of part bundles.
  • the predetermined limit number of part bundles is generally less than ten.
  • the parameters required for the extended method may also be stored in the program computer processing the method.
  • switch-off tilting positions which would lead to scattered light in the object field, takes place with a clearly defined criterion.
  • Those switch-off tilting positions are eliminated, in which second facets could be impinged upon, which are in turn allocated to object field illumination channels within the prohibited spacing of an adjacent first facet to be switched off.
  • the prohibited spacing can be selected such that only the facets directly adjacent to the selection facet are "prohibited”.
  • the next but one neighbours or else neighbours located still further away may be considered as "prohibited” first facets, depending on the selection of the prohibited spacing.
  • a 1/e-diameter (diameter, at which the intensity has dropped to the value 1/e 2 ) of the part bundle on the second facet mirror can be reckoned with here.
  • Selection facets for which no switch-off tilting position is available after carrying out the method, can be subjected to another special check with the aim of minimising the probability of an impingement of second facets, which are allocated to first facets within the prohibited spacing from the respective selection facet.
  • a certain number of first facets of this type can be tolerated, for example 10 %, 5 %, 3 %, 2 % or 1% of the total number of first facets or optionally an even smaller fraction.
  • the method can also be influenced by varying the tolerance range or by varying a sequence of the selection facets to be played through in such a way that admissible switch-off tilting positions can be found for a larger number of selection facets.
  • the maximum thermal load on the second facets when switching off the first facets is in turn minimised.
  • the method for the scattered light- minimised specification of a set of switch-off tilting positions is repeated until that set of switch-off tilting positions with the smallest thermal load on the most highly thermally loaded second facet has been found. It can then be interrupted if the smallest or minimal maximum load parameter found is below a predetermined limit value.
  • the specification methods discussed above can also be used to correct object field illumination parameters in order to bring about defined illumination conditions in an image field, in which the illuminated object field is imaged, in particular during the EUV projection exposure.
  • illumination parameters of this type are telecentric and/or uniformity values.
  • a thermal overload of second facets, in particular of pupil facets of the illumination optical system can also be determined or detected with the aid of a detection device for detecting a thermal load on the second facets. With the aid of the position of a thermally overloaded second facet thus detected, the first facet or those first facets which impinge(s) on this second facet may be indicated.
  • displacement actuators allocated to these first facets, in particular tilting actuators, and a corresponding displacement of these first facets the thermal overload on the second facet can then be eliminated.
  • a check can be made with low outlay as to whether in a real switch-off situation of first facets of the first facet mirror, with a given illumination setting, the thermal loading of the second facets is below a predetermined limit value.
  • the detection device may have a signal connection to the computer and/or the control device.
  • the spatial resolution of the detection device may be such that, with the aid of the thermal load data detected by the detection device, the relative thermal load on every single one of the second facets can be determined.
  • a detection device is economical and can readily be provided with a spatial resolution also necessary for the spacially resolved detection of a second facet mirror with several hundred second facets.
  • illumination system according to claim 10 a projection exposure system according to claim 1 1, a production method according to claim 12 and a component according to claim 13 correspond to those which have already been discussed above with reference to the illumination optical system according to the invention and the method according to the invention.
  • Illuminations precisely adapted to the component structure to be produced can be predetermined, so that, in particular, semiconductor chips with extremely fine and, in particular, complex structures can be produced.
  • FIG. 1 shows schematically and with reference to an illumination optical system, in meridional section, a projection exposure system for microlithography
  • Fig. 2 shows a plan view of a facet arrangement of a field facet mirror of the illumination optical system of the projection exposure system according to Fig. 1 ;
  • Fig. 3 shows a plan view of a facet arrangement of a pupil facet mirror of the illumination optical system of the projection exposure system according to Fig. 1 ;
  • Fig. 4 shows a facet arrangement of a further configuration of a field facet mirror in a view similar to Fig. 2;
  • Fig. 5 shows schematically, at the top, a few pupil facets of a pupil facet mirror in a manner of that according to Fig. 3, respective pairs of pupil facets, which via object field illumination channels are allocated to one and the same field facet of the field facet mirror of the illumination optical system, being emphasised by connecting lines; schematically, at the bottom, a field facet allocated to a pair of pupil facets in a section perpendicular to its reflection face;
  • Fig. 6 shows the pupil facets according to Fig. 5 at the top, impingement regions or impingement positions of part bundles of an illumination bundle of the illumination optical system additionally being shown, which are reflected by the field facets which are allocated to the emphasised pupil facet pairs, in switch-off tilting positions; shows, in a view similar to Fig. 6, another distribution of part bundle impingement regions, reflected by the field facets allocated, in each case, to the pupil facet pairs; shows schematically, perspectively, all the pupil facets of the pupil facet mirror according to Fig. 5 at the top, together with a detection device for the individual detection of a thermal load on the pupil facets; schematically shows a plan view of a facet
  • a further configuration of a pupil facet mirror of the illumination optical system of the projection exposure system according to Fig. 1, pupil facets, illuminated via object field illumination channels, of an x-dipole illumination setting, further pupil facets of the x-dipole illumination setting, which are not impinged upon via object field illumination channels and further pupil facets, which are impinged upon via switch-off beam paths not impinging on the object field, being emphasised differently in each case; shows a detail cutout from Fig. 9 with a tolerance range of an impingement position in the switch-off position of a switch-off facet of the pupil facet mirror; Fig. 1 1 shows a cutout of the facet arrangement according to
  • Fig. 12 shows a cutout of a plan view of a facet arrangement of a further configuration of a field facet mirror of the illumination optical system of the projection exposure system according to Fig. 1 , a field facet, which is allocated to a pupil facet pair, emphasised in Fig. 1 1 , via object field illumination channels, a group of field facets, which are arranged within a prohibited spacing around this field facet, as well as further field facets allocated to the switch-off pupil facets according to
  • Fig. 1 1 via object field illumination channels, being emphasised differently in each case, and
  • Fig. 13 to Fig. 20 in each case show plan views of a facet arrangement of a further configuration of a pupil facet mirror of the illumination optical system of the projection exposure system according to Fig. 1 , pupil facets illuminated via object field illumination channels of different illumination settings being emphasised in each case.
  • a projection exposure system 1 for microlithography is used for producing a microstructured or nanostructured electronic semiconductor component.
  • a light source 2 emits EUV radiation used for illumination in the wavelength range of, for example, between 5 nm and 30 nm.
  • the light source 2 may be a GDPP source (Gas Discharge Produced Plasma) or an LPP source (Laser Produced Plasma).
  • a radiation source based on a synchrotron can also be used for the light source 2.
  • EUV illumination light or illumination radiation 3 is used for illumination and imaging within the projection exposure system 1.
  • a corresponding collector is known from EP 1 225 481 A.
  • the EUV illumination light 3 firstly passes through an intermediate focus plane 5, which can be used to separate the EUV illumination light 3 from undesired radiation or particle fractions.
  • the EUV illumination light 3 After running through the intermediate focus plane 5, the EUV illumination light 3 firstly impinges on a field facet mirror 6.
  • a Cartesian global xyz-coordinate system is drawn, in each case, in the drawing.
  • the x-axis in Fig. 1 runs perpendicular to the plane of the drawing and out of it.
  • the y-axis in Fig. 1 runs to the right.
  • the z-axis runs upwardly in Fig. 1.
  • a Cartesian local xyz- or xy-coordinate system is also used, in each case, in the following figures.
  • the respective local xy-coordinates span, if nothing different is described, a respective main arrangement plane of the optical component, for example a reflection plane.
  • the x-axes of the global xyz-coordinate system and the local xyz- or xy-coordinate systems run parallel to one another.
  • Fig. 2 shows, by way of example, a facet arrangement of field facets 7 of the field facet mirror 6.
  • the field facets 7 are rectangular and in each case have the same x/y-aspect ratio.
  • the x/y-aspect ratio may, for example, be 12/5, 25/4 or 104/8.
  • the field facets 7 predetermine a reflection face of the field facet mirror 6 and are grouped in four columns each with six to eight field facet groups 8a, 8b.
  • the field facet groups 8a in each case have seven field facets 7.
  • the two additional edge-side field facet groups 8b of the two centre field facet columns in each case have four field facets 7.
  • the facet arrangement of the field facet mirror 6 has intermediate spaces 9, in which the field facet mirror 6 is shaded by holding spokes of the collector 4.
  • the EUV illumination light 3 After reflection on the field facet mirror 6, the EUV illumination light 3 divided into beam pencils or part bundles, which are allocated to the individual field facets 7, impinges on a pupil facet mirror 10.
  • Fig. 3 shows an exemplary facet arrangement of round pupil facets 1 1 of the pupil facet mirror 10.
  • the pupil facets 1 1 are arranged around a centre in facet rings located inside one another.
  • At least one pupil facet 1 1 is allocated to each part bundle of EUV illumination light 3 reflected by one of the field facets 7 in such a way that a respective facet pair, that is impinged upon, with one of the field facets 7 and one of the pupil facets 1 1 predetermines an object field illumination channel for the associated part bundle of EUV illumination light 3.
  • the channel-wise allocation of the pupil facets 1 1 to the field facets 7 takes place depending on a desired illumination by the projection exposure system 1.
  • the field facets 7 are imaged in an object plane 16 of the projection exposure system 1 by means of the pupil facet mirror 10 (cf. Fig. 1) and a following transmission optical system 15 consisting of three EUV mirrors 12, 13, 14.
  • the EUV mirror 14 is configured as a grazing incidence mirror.
  • a reticle 17 Arranged in the object plane 16 is a reticle 17, from which an illumination area in the form of an illumination field, which coincides with an object field 18 of a downstream projection optical system 19 of the projection exposure system 1, is illuminated by the EUV illumination light 3.
  • the object field illumination channels are overlaid in the object field 18.
  • the EUV illumination light 3 is reflected by the reticle 17.
  • the projection optical system 19 images the object field 18 in the object plane 16 in an image field 20 in an image plane 21.
  • a wafer 22 Arranged in this image plane 21 is a wafer 22, which carries a light-sensitive layer, which is exposed during the projection exposure with the projection exposure system 1.
  • the projection exposure system 1 is configured as a scanner. The scanning direction will also be designated below the object displacement direction.
  • the field facet mirror 6, the pupil facet mirror 10 and the mirrors 12 to 14 of the transmission optical system 15 are components of an illumination optical system 23 of the projection exposure system 1. Together with the projection optical system 19, the illumination optical system 23 forms an illumination system of the projection exposure system 1.
  • the field facet mirror 6 is a first facet mirror of the illumination optical system 23.
  • the field facets 7 are first facets of the illumination optical system 23.
  • the pupil facet mirror 10 is a second facet mirror of the illumination optical system 23.
  • the pupil facets 1 1 are second facets of the illumination optical system 23.
  • Fig. 4 shows a further configuration of a field facet mirror 6.
  • Components which correspond to those which have been described above with reference to the field facet mirror 6 according to Fig. 2, have the same reference numerals and will only be described if they differ from the components of the field facet mirror 6 according to Fig. 2.
  • the field facet mirror 6 according to Fig. 4 has a field facet arrangement with curved field facets 7. These field facets are arranged in a total of five columns each with a plurality of facet groups 8. The field facet arrangement is written into a circular limitation of a carrier plate 24 of the field facet mirror.
  • the field facets 7 of the configuration according to Fig. 4 all have the same face and the same ratio of width in the x-direction and height in the y- direction, which corresponds to the x/y-aspect ratio of the field facets 7 of the configuration according to Fig. 2.
  • Precisely two of the pupil facets 1 1 of the pupil facet mirror 10 are allocated to each of the field facets 7 of the respective configuration of the field facet mirror 6 via an object field illumination channel, in each case.
  • the pupil facet mirror 10 thus has twice as many pupil facets 1 1 as the field facet mirror 6 has field facets 7.
  • Figures 5 to 8 illustrate this with the aid of a schematically shown facet arrangement of a further configuration of the pupil facet mirror 10.
  • the view of the facet arrangement of Figs. 5 to 8 is highly schematic.
  • the pupil facet mirror 10 in the configuration according to Figs. 5 to 8 has about 800 pupil facets 1 1.
  • Each of the pupil facets 1 1 has a diameter of about 10 mm.
  • Reflection faces of the field facets 7 of the field facet mirror 6 are tiltable between a first illumination tilting position to guide the EUV part bundle impinging on the field facet 7 along a first object field illumination channel in the direction of one of the pupil facets 1 lj and a further illumination tilting position to guide the EUV part bundle impinging on the field facet 7 along a further object field illumination channel in the direction of another of the pupil facets 1 lj, which differs from that of the pupil facet 1 1 , to which the part bundle is guided in the first illumination tilting position of the field facet 7.
  • Fig. 5 shows, schematically emphasised, a total of four pairs H i, 1 1 r; 1 1 2 , 1 12S H 3, 1 13 ⁇ ; 1 1 4 , 1 1 4 ⁇ of the pupil facets 1 1 , the pupil facets of each of the pairs in each case being allocated to the two illumination tilting positions of one of the field facets 7.
  • Connecting lines 251, 25 2 , 25 3 , 25 4 between the pupil facet pairs 1 11, 1 1 1 ; 1 1 2 , 1 1 2 1 1 3 , 1 1 3 1 1 4 , 1 1 4 > schematically indicate the path of the EUV part bundle reflected by the associated field facet 7 during the change of this field facet 7 between the two illumination tilting positions.
  • the connecting lines 25 are shown schematically as straight lines.
  • the connecting lines 25 in reality often do not run straight, but in the form of conic sections.
  • the precise shape of the course of the connecting lines 25 depends on the geometries of an illumination of the pupil facets 1 1, on the one hand, and a tilting mechanism for the respective field facet 7, on the other hand.
  • An outer pupil facet 1 1 1 1 2 , 1 1 3 , 1 1 4 and an inner pupil facet l i , 1 1 2 >, 1 1 3 >, 1 1 4 > are allocated to one another, in each case, via the pairs 1 11, 1 1 ; 1 1 2 , l l 2 .; l l 3 , l l 3 .; l l 4 , 1 1 4 ,
  • the arrangement of the pupil facets 1 1 can be roughly divided into four quadrants I, II, III, IV, the quadrant I in Fig. 5 including those of the pupil facets 1 1 , which, viewed from a centre point M of the carrier plate 24 indicated in Fig. 4 are located in the sector arranged on the right and the further quadrants II to IV are numbered consecutively in the anti-clockwise direction as mathematically conventional.
  • the pupil facets l l l 5 1 1 r ; 1 1 2 , 1 1 2 1 1 3 , 1 1 3 -; 1 1 4 , 1 l 4 Of each of the pupil facets pairs are in each case located in different quadrants I to rv.
  • the pupil facet 1 11 is located in the quadrant II.
  • the pupil facet 1 1 v is located in the quadrant I.
  • the pupil facet 1 1 2 is located in the quadrant I.
  • the pupil facet 1 1 2 . is located in the quadrant II.
  • the pupil facet 1 1 3 is located in the quadrant I.
  • the pupil facet 1 1 3 - is located in the quadrant II.
  • the pupil facet 1 1 4 is located in the quadrant II.
  • the pupil facet 1 1 4 is located in the quadrant II.
  • the pupil facet 1 1 4 is located in the quadrant II.
  • the pupil facet 1 1 4 is located in the quadrant II.
  • the pupil facet 1 1 4 is located
  • the field facets 7 that can be tilted between the illumination tilting positions can also be tilted into a switch-off tilting position. While the two illumination tilting positions are defined by end stops of the tilting of the tiltable field facet 7 precisely in their position, this is not the case for the switch-off tilting position located between the two illumination tilting positions.
  • the switch-off tilting position is used to guide the EUV part bundle impinging on the field facet 7 in the direction of a switch-off beam path not impinging on the object field 18, which differs from the direction of the object field illumination channels.
  • Fig. 5 shows the field facet 7i allocated to the pupil facet pair 1 1 1 1 1 v in a section perpendicular to its reflection face.
  • the field facet 7i can be tilted relative to a field facet carrier 26 about a joint axis 27 perpendicular to the drawing plane of the insert of Fig. 5 between the two illumination tilting positions defined by stops 28, 29, on the one hand, on the field facet 7i and, on the other hand, on the field facet carrier 26 with the aid of an actuator, not shown.
  • the field facet 7i is shown in the switch-off tilting position located between these two illumination tilting positions.
  • FIG. 5 also schematically shows the EUV part bundle of the illumination light 3 incident on the field facet 7 l5 the object field illumination channel 3i allocated to the first illumination tilting position, the second object field illumination channel 3 ⁇ allocated to the second illumination tilting position and, in dashed lines, a switch-off beam path 30.
  • the direction of the switch-off beam path 30 is not precisely defined in the same manner as the direction of the two object field illumination channels 3 ⁇ 3 ⁇ .
  • the direction of the switch-off beam path 30 thus has a finite direction tolerance.
  • Fig. 6 additionally shows, in a view of the pupil facet mirror 10 according to Fig.
  • the impingement regions 31 to 34 in each case touch various pupil facets 1 1, which in turn do not coincide with any of the pupil facets of the pupil facet pairs 1 1 1 , 1 1 ; 1 1 2 , 1 1 2 1 1 3 , 1 1 3 1 1 4 , 1 1 4 *.
  • the pupil facet 1 1 5 which is located on the impingement region 34, is simultaneously a switch-off facet 35, which is allocated to the field facet 7, which by means of an EUV part bundle impinges on the two pupil facets 1 1 4 , 1 1 4 > in the two illumination tilting positions.
  • the pupil facet 1 1 5 is thus then impinged upon during operation of the pupil facet mirror 10 by two EUV part bundles, when the field facet 7 belonging to the pupil facet pair 1 1 4 , 1 1 4 .
  • Fig. 7 shows a second distribution of the impingement regions 31 to 34 of EUV part bundles, which is not desired because of the thermal loading of individual pupil facets 1 1 linked therewith and which results owing to correspondingly predetermined switch-off tilting positions of the field facets 7 allocated to the pupil facet pairs 1 11 , 1 1 ; 1 1 2 , 1 1 2 1 1 3 , 1 1 3 1 1 4 , 1 1 4' .
  • the impingement regions 32 to 34 all overlap on the pupil facet 1 1 6 , so that the latter, in the least favourable case, is impinged upon as the switch-off facet 35 for three allocated field facets 7, namely for the field facets allocated to the pupil facet pairs 1 1 2 , 1 1 2 1 1 3 , 1 1 3 1 1 4 , 1 1 4 > and additionally via an object field illumination channel by a further field facet 7.
  • the pupil facet 1 1 6 can therefore be simultaneously impinged upon by a total of four EUV part bundles. This leads to a thermal loading of the pupil facet 1 1 6 , which should be avoided.
  • a method for predetermining switch-off tilting positions of the field facets 7 with guidance to switch-off facets 35 when using the illumination optical system 22 will be described below, an undesired impingement of the object field 18 with scattered light being avoided or at least minimised, on the one hand, and, a predetermined limit fraction of the switch-off facets 35, on the other hand, for example 90 %, 95 %, 98 %, 99 % or 100 % of the switch- off facets 35 being impinged upon by no more than a predetermined limit number, for example by no more than four, not more than three or no more than two EUV part bundles.
  • This method can be implemented as a simulation program for the design of the illumination optical system and run completely without intervention of a user.
  • one of the field facets 7 is selected as the selection facet 7. All the possible switch-off tilting positions of this selection facet 7 are then determined. All the switch-off tilting positions are then eliminated, which would lead to scattered light in the object field 18 by impingement of allocated candidate switch-off facets 35 via the respective switch-off beam paths 30. This elimination can take place by experimental impingement of all candidate switch-off facets allocated to the selection facet 7 via candidate switch-off beam paths and pursuing these candidate switch-off beam paths, he candidate switch-off beam paths may be pursued within the illumination optical system design program.
  • a plurality of admissible switch-off tilting positions i.e. not leading to scattered light, can generally be allocated at least to some of the field facets 7.
  • a random distribution of the possible switch-off tilting positions, which were allocated to the field facets 7 by the implemented method will be predetermined below by way of a Monte Carlo simulation. This simulation can also be realised by a computer program, so it can be carried out completely without user intervention.
  • the maximum load pupil facet can be determined with the aid of a detection device 36 (cf. Fig. 8) to detect a thermal load on at least one of the pupil facets 1 1 and preferably on all the pupil facets 1 1. This can be used to carry out the specification method or also for monitoring the thermal load of the pupil facet mirror 10 during operation of the projection exposure system 1.
  • An example of the detection device 36 is a thermal image camera, the arrangement of which to determine the thermal load on the pupil facets 1 1 of the pupil facet mirror 10 is shown in Fig. 8. Arrows 37 in Fig. 8 indicate a detection region of the detection device 36.
  • the detection device 36 is in a position to spatially resolve the thermal load on each individual pupil facet 1 1.
  • the detection device 36 By means of the detection device 36, that pupil facet 1 1 can thus be determined in practice, which experiences the greatest thermal load.
  • the practical detection of the thermal load on the pupil facets 1 1 has the advantage that effects which depend on the impingement angle of the illumination light 3 of reflective coatings on the pupil facet mirror 1 1 and optionally additional impingements caused by scattered light can also be detected here.
  • the detection device 36 can also be used in the continuous operation of the projection exposure system 1 in order to detect a thermal overload of one of the pupil facets 1 1 due to an impingement with an undesired plurality of EUV part bundles. With the aid of the position of a thermally overloaded pupil facet 1 1 thus detected, the field facet 7 or the group of field facets 7 impinging on this pupil facet 1 1 via an object field illumination channel or via switch-off beam paths may be indicated. By corresponding activation of tilting actuators allocated to these field facets 7 and corresponding tilting of these field facets 7, the thermal overload on the pupil facet 1 1 can be eliminated by changing switch-off beam paths.
  • Fig. 9 shows a plan view of a pupil facet arrangement of a further configuration of the pupil facet mirror 10 for use in the illumination optical system 23.
  • Pupil facets 1 1 of the pupil facet mirror 10 according to Fig. 9 have square reflection faces and are arranged in the form of a grid with lines and columns inclined diagonally at 45° to the x-direction or to the y-direction.
  • the square pupil facets 1 1 have reflection faces of 7.5 mm x 7.5 mm.
  • a central region 38 of the pupil facet mirror 10 according to Fig. 9 has no pupil facet mirrors 1 1.
  • the pupil facets 1 1 1 are arranged within the carrier plate 24, which is in turn circular, of the pupil facet mirror 10, which is merely indicated in Fig. 9.
  • the pupil facet mirror 10 is shown in Fig. 9 with an impingement of emphasised pupil facets 1 1 with EUV part bundles such that a modified x- dipole illumination setting results.
  • This illumination setting is produced by the modification of a standardised x-dipole illumination setting, in which all the pupil facets 1 1 , which are arranged in the quadrants I and III, are impinged on via object field illumination channels by the associated field facets 7 with EUV part bundles.
  • those field facets 7, which are allocated to the pupil facets 1 1 arranged within a limit radius G about a centre Z of the central region 38, which are impinged upon in the standardised x-dipole illumination setting are brought into the switch-off tilting position.
  • Active pupil facets 1 1 A contributing to the illumination of the object field 18 (facets with further hatching "A”) and inactive pupil facets 1 li not contributing to the illumination of the object field 18 (facets with closer hatching "I") are then located within the radius R G in the quadrants I and III.
  • the field facets 7 belonging to the inactive pupil facets 1 li are in turn tiltable between two illumination tilting positions, as already described above in conjunction with Figs. 4 to 8.
  • Selected pairs 1 lj, 1 I f of pupil facets 1 1 are in turn drawn in Fig. 9 and are in each case impinged upon in the two illumination tilting positions of the associated field facet 7 with an EUV part bundle along an object field illumination channel.
  • a total of five pupil facets pairs 1 11 , 1 1 to 1 1 5 , 1 15- (i 1 to 5) are emphasised.
  • Possible impingement positions 39j J are shown by way of example between the respective pupil facets 1 lj, 1 11- of these pupil facet pairs on the associated connecting lines 25j.
  • the parameter j designates the j-position impingement position 39 of the EUV part bundle which can be predetermined by means of the respective switch- off tilting position, proceeding from the pupil facet 1 1; along the
  • connection line 25j The impingement positions 39j J are therefore located on switch-off beam paths 30. Located between the pupil facets 1 11 and 1 1
  • each of these impingement positions 39j J can be predetermined in a controlled manner by corresponding activation of the actuator to tilt the associated field facet 7. Because of the positioning precision already mentioned above in the specification of the switch-off tilting position of the field facet 7, the respective impingement position 39j J cannot be precisely predetermined, but is only reproducible within a tolerance range 40 around the respective impingement position 39j J . This is shown in Fig. 9 using the example of the impingement position 39i U .
  • the impingement position 39i U is activated by means of the associated switch-off tilting position, it can be disclosed with certainty that the real impingement position of the EUV part bundle, which is reflected by the field facet 7 brought into this switch-off tilting position, impinges on the pupil facet mirror 10 within the tolerance range 40 around the impingement position 39j J .
  • the tolerance range 40 and the respective impingement position 39j J therefore correspond to the impingement region, which has already been described above in conjunction with Figs. 5 to 7.
  • Those pupil facets 1 1, which are at least partially located within the tolerance range 40 about an impingement position 39j J will be designated pupil facets 1 1 TB below.
  • FIG. 9 Further groups of pupil facets 1 1 TB located at least partially in tolerance ranges 40 around a selected impingement position 39j J are emphasised in Fig. 9 for the various pairs 1 lj, 1 1 ⁇ of pupil facets, which can in each case be impinged upon by the same field facet 7 in its two illumination tilting positions with an EUV part bundle.
  • the number of these pupil facets 1 1 TB impinged upon in each case with a certain probability in a switch-off tilting position of one of the field facets 7 depends on the size of the tolerance range 40 and on the orientation of the connection lines 25; with respect to the lines and columns of the matrix arrangement of the pupil facets 1 1.
  • Fig. 10 shows the tolerance range 40 in detail.
  • the tolerance range 40 has an extent with an amount b around the impingement position 39j J . Perpendicular to the connecting line 25j, the extent of the tolerance range 40 around the impingement position 39j J has the amount a.
  • the EUV part bundle, in the impingement position 39i J has a beam diameter (six-times 1/e radius) spot of about 2.5 mm.
  • a possible value for Tol_p is 6 mm, 10 mm or 20 mm.
  • An allocated tilting angle tolerance of the field facets 7 is about 5 mrad. Typical values for Tol_s are 1 mm to 4 mm. Because of the tolerance range 40, in the switch-off tilting position allocated to the impingement position 39i U , of the respective field facet 7, the pupil facets 1 1 TB arranged in the region of the tolerance range 40 can actually be impinged upon. Which of the pupil facets 1 1 TB is actually impinged upon is randomly dependent on the actual switch-off tilting position around the switch-off tilting position of the field facet 7
  • a further method for specifying switch-off tilting positions of the field facets will be described below, in which with a first sequence of method steps, a minimisation of scattered light incident on the object field 18 via switch-off beam paths is firstly achieved and in which, in a subsequent method sequence, a minimisation of a maximum thermal load on the pupil facets 1 1 is achieved , which to achieve a given illumination setting is impinged upon with EUV part bundles via switch- off beam paths.
  • This further method for specifying the switch-off tilting positions can also be completely implemented as a computer program and does not need any user intervention. Further components for carrying out the specification method are shown schematically in Fig.
  • control device 41 for the individual specification of tilting positions of the field facets 7 by activating corresponding actuators 42a, which are allocated to the field facets 7 individually in each case, and a computer 42 for the program-controlled implementation of the method sequence and for storing the data obtained.
  • one of the field facets 7 is selected as a selection facet.
  • This selection facet is designated 7 A in Fig. 12.
  • An impingement position 39j J or a candidate switch-off face 1 I K is then selected, which, in a possible candidate tilting position of the selection facet, would be impinged upon thereby via the associated switch-off beam path. In the example of Fig. 1 1 , this is the impingement position 39j 6 .
  • All the tolerance spacing pupil facets 1 1 TB are then determined which are arranged within the tolerance range (cf. tolerance range 40 in Fig. 9) around the candidate switch-off pupil facet 1 1 K or around the candidate impingement position 39j J .
  • All the allocation field facets 7 Z on the field facet mirror 6 are then determined which are allocated to the tolerance spacing pupil facets 1 1 K via object field illumination channels.
  • Some of these allocation field facets 7 Z are drawn in Fig. 12.
  • the distribution of the allocation field facets 7 Z is more or less random around the selection facet 7 A .
  • a check takes place as to whether at least one of the determined allocation field facets 7 Z lies around the selection facet 7 A within a prohibited spacing.
  • the field facets 7 V located within the prohibited spacing around the selection facet 7 A are the field facets 7 directly adjacent to the selection facet 7 A .
  • none of the allocation field facets 7 Z lies within the prohibited spacing around the selection facet 7 A .
  • the selection facet 7 A and the associated candidate tilting position are then stored in the computer 42 in the form of an entry in a switch-off tilting position table.
  • a further candidate switch-off pupil facet 1 1 K > or a further candidate impingement position 39j J is selected, which can be impinged upon in a possible further candidate tilting position of the selection field facet 7 A thereby via a switch-off beam path 30.
  • this is the impingement position 39/.
  • the tolerance range pupil facets 1 1 TB which are arranged within the tolerance range 40 around the exit position 39j or around the candidate switch-off pupil facet 1 1 K > and which then also move in accordance with the displacement of the impingement position 39j J to the impingement position 39j J , can now be determined.
  • the allocated allocation field facets 7 Z can then in turn be determined and it can in turn be checked whether at least one of these allocation field facets 7 Z is also a prohibited spacing field facet 7 V .
  • a further candidate tilting position is selected until either a candidate tilting position is found, in which none of the allocation field facets 7 is also one of the prohibited spacing field facets 7 V or until no selectable candidate tilting position, in other words no further impingement position 39j J can be selected between the pupil facets 1 lj and 1 li ' .
  • the information is output that for the associated selection facet 7 A , no candidate tilting position is available which allows a switching off, free of scattered light for the object field 18, of the selection field facet 7 A .
  • the next selection facet 1 on the field facet mirror 6 is now selected and the above-described specification method for the allocation of possible switch-off tilting positions to the selection field facets is repeated. This is repeated until all the tiltable field facets 7 have been selected.
  • the above-described basic specification method can be extended as follows to minimise a thermal maximum load on the pupil facets 1 1 when switching off selected ones of the field facets 7 for a specific illumination setting. Firstly, for each of the switch-off tilting positions found by the specification method, it is determined which of the pupil facets 1 1 within the tolerance range 40 surrounding it could be impinged upon, in principle, by the EUV part bundle of the field facet 7 in each case brought into the switch-off tilting position. That maximum load pupil facet is then determined, which could be impinged upon in most switch-off tilting positions. A maximum load parameter is then determined, which corresponds to the number of maximally possible impingements of the maximum load pupil facet 1 1.
  • the size of the tolerance range 40 apart from the positioning precision of the field facet 7 in the switch-off tilting position, also depends on the spot size spot of the part bundle on the pupil facet mirror 10.
  • the size of the tolerance range which is used in the above-described specification method, therefore has to be adapted for each application. Where the boundary conditions are otherwise the same, it applies that a distribution of switch- off tilting positions, which, on the one hand, is free of scattered light and, on the other hand, leads to a low thermal maximum load on the pupil facets, is all the easier to find, the smaller the extent of the tolerance range 40.
  • Figs. 13 to 20 by way of example show various illumination settings, in other words various distributions of pupil facets 1 1 , which can be illuminated via object field illumination channels.
  • illumination settings correspondingly lead to various distributions of illumination angles, with which the illumination field, in other words the object field 18, is illuminated.
  • Fig. 13 shows the illumination of pupil facets 1 1 located within a limit radius G , in other words a so-called conventional setting with the radius G with a corresponding maximum illumination angle in the object field 18.
  • Fig. 14 shows the illumination of pupil facets 1 1 , which are located outside a limit radius RQ. This is therefore an illumination of the pupil facet mirror 10 to produce and annular illumination setting.
  • Fig. 15 shows the standardised x-dipole illumination setting already mentioned above.
  • Fig. 16 shows a y-dipole illumination setting which is complementary to the standardised x-dipole illumination setting and in which the pupil facets 1 1 in the quadrants II and IV are illuminated via object field illumination channels.
  • Fig. 14 shows the illumination of pupil facets 1 1 , which are located outside a limit radius RQ. This is therefore an illumination of the pupil facet mirror 10 to produce and annular illumination setting.
  • Fig. 15 shows the standardised x-dipole illumination setting already mentioned above.
  • Fig. 16 shows a y-dipole illumination setting which is complementary to the standardised x-dipole illumination setting and in which the pupil facets 1 1 in the quadrants II and IV are illuminated via object field illumination channels.
  • FIG. 17 shows a quadrupole illumination setting with main axes running in the x-direction and y-direction, 4 of 8 octants Oi to O 8 being illuminated alternatingly in each case on the pupil facet mirror 10, namely the octants Oi, O 3 , O 5 and O 7 , on the angle bisectors of which the x-axis and the y-axis are located in each case.
  • Fig. 18 shows an illumination of the pupil facet mirror 10, complementary to the illumination according to Fig. 17, to produce a quadrupole illumination setting with main axes rotated through 45° relative to the quadrupole illumination setting according to Fig. 17.
  • the octants O 2 , O 4 , O 6 and O 8 are then illuminated.
  • Fig. 19 shows an illumination of the pupil facet mirror 10, which in a first approximation is an x-dipole illumination, a radially outer portion of the pupil facet mirror 10, which passes over the octants O 8 , O l5 O 2 and O 4 to O 6 , being illuminated and two illumination spokes 43 extending between these annular portions and the central region 38 being illuminated on the pupil facet mirror 10, which extend in the peripheral direction around the centre Z of the carrier plate 24 of the pupil facet mirror 10, spaced apart from one another, in each case over an angle range of 22.5°.
  • Fig. 20 shows an illumination of the pupil facet mirror 10, which is rotated through 90° around the centre Z relative to the illumination according to Fig. 19.
  • All the illumination settings according to Figs. 13 to 20 can be realised without switching off field facets 7.
  • the number of illuminated pupil facets 1 1 can be reduced, which opens up further classes of illumination settings, for example, an annular setting with a smaller variation of the absolute illumination angle or a section of an annular and a dipole or multipole setting.
  • a dipole or multipole setting can also be realised, in which a smaller angle band width of the illumination from the direction of the individual poles can be produced.
  • a fine tuning of standardised settings, in particular, can be produced by means of the switch-off tilting positions.
  • Annular widths of conventional or annular illumination settings or pole widths of dipole, quadrupole or multipole settings can thus be
  • the reticle 17 and the wafer 22, which carries a coating which is light-sensitive to the EUV illumination light 3, are provided. At least one portion of the reticle 17 is then projected onto the wafer 22 with the aid of the projection exposure system 1. Finally, the light-sensitive layer exposed with the EUV illumination light 3 is developed on the wafer 22.
  • the microstructured or nano structured component for example a semiconductor chip, is produced in this manner.
  • EUV illumination a UV or VUV illumination can also be used, for example with illumination light with a wavelength of 193 nm.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un système optique d'éclairage destiné à une lithographie par projection UVE pour l'éclairage d'un champ d'éclairage, dans lequel un champ d'objet d'un système optique d'imagerie suivant peut être ménagé. Ledit système optique d'éclairage comprend un premier miroir à facettes qui comporte une pluralité de premières facettes (71) pour le guidage par réflexion de faisceaux partiels d'une lumière d'éclairage UVE (3). Un second miroir à facettes (10) en aval comprenant une pluralité de secondes facettes (11) est utilisé pour le guidage par réflexion des faisceaux partiels (31; 31') réfléchis par les premières facettes (71), des canaux d'éclairage de champ d'objet, auxquels sont attribués, dans chaque cas, une première facette (71) et une seconde facette (111; 111'), étant prédéfinis par les premières facettes (7) et les secondes facettes (111; 111') attribuées au moyen du guidage de faisceau réfléchi. Les faces de réflexion d'au moins certaines des premières facettes (71) peuvent être inclinées dans chaque cas entre au moins une position d'inclinaison d'éclairage pour guider le faisceau partiel le long d'un canal d'éclairage de champ d'objet (31; 31') dans la direction de l'une des secondes facettes (111; 111') et au moins une position d'inclinaison de déconnexion afin de guider le faisceau partiel dans la direction d'un trajet de faisceau de déconnexion (30) sans venir heurter le champ d'objet. La direction du trajet de faisceau de déconnexion (30) diffère de celle du canal d'éclairage de champ d'objet (31; 31'). L'invention concerne également des procédés de prédéfinition d'un ensemble de positions d'inclinaison de déconnexion des premières facettes (7) pouvant être inclinées. Il est ainsi possible d'obtenir un système optique d'éclairage permettant un ajustement fin des réglages d'éclairage à prédéfinir pour l'éclairage du champ d'éclairage.
PCT/EP2011/058418 2010-06-08 2011-05-24 Système optique d'éclairage pour lithographie par projection uve WO2011154244A1 (fr)

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DE102015223980A1 (de) 2015-12-02 2016-10-20 Carl Zeiss Smt Gmbh Optische Baugruppe
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DE102015209176A1 (de) 2015-05-20 2016-11-24 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithographie
DE102016222033A1 (de) 2016-11-10 2016-12-29 Carl Zeiss Smt Gmbh Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Be-leuchtungssystem in einer EUV-Projektionsbelichtungsanlage
DE102017210990A1 (de) 2017-06-28 2017-08-31 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld mit EUV-Abbildungslicht
US10133182B2 (en) 2014-09-03 2018-11-20 Carl Zeiss Smt Gmbh Illumination optical assembly for a projection exposure apparatus
DE102018218850A1 (de) 2018-11-06 2018-12-20 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithographie
DE102017216703A1 (de) 2017-09-21 2019-03-21 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung mindestens einer optischen Komponente einer Projektionsbelichtungsanlage
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WO2020221763A1 (fr) 2019-04-29 2020-11-05 Carl Zeiss Smt Gmbh Optique d'éclairage de mesure pour le guidage de lumière d'éclairage dans un champ d'objet d'une installation d'exposition par projection pour la lithographie euv
WO2021028132A1 (fr) 2019-08-09 2021-02-18 Carl Zeiss Smt Gmbh Système d'éclairage optique servant à guider un rayonnement euv
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DE102020208665A1 (de) 2020-07-10 2022-01-13 Carl Zeiss Smt Gmbh Optisches Beleuchtungssystem zur Führung von EUV-Strahlung
DE102022206126A1 (de) 2022-06-20 2023-03-09 Carl Zeiss Smt Gmbh Bauteil zum Einsatz in einer Projektionsbelichtungsanlage

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DE102012209132A1 (de) * 2012-05-31 2013-12-05 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie
DE102012220597A1 (de) 2012-11-13 2014-05-28 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithographie
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WO2009132756A1 (fr) * 2008-04-30 2009-11-05 Carl Zeiss Smt Ag Équipement optique d'éclairage pour une microlithographie euv et système d'éclairage et appareil d'exposition par projection comprenant un équipement optique d'éclairage de ce type
WO2011023419A1 (fr) * 2009-08-25 2011-03-03 Asml Netherlands B.V. Système d'éclairage, appareil lithographique et procédé de réglage d'un mode d'éclairage
WO2011080019A1 (fr) * 2009-12-29 2011-07-07 Asml Netherlands B.V. Système d'éclairage, appareil lithographique et procédé d'éclairage

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DE102012207377A1 (de) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
WO2013164207A1 (fr) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Unité optique d'éclairage et système optique pour une lithographie par projection dans l'ultraviolet extrême (euv)
US10976668B2 (en) 2012-05-03 2021-04-13 Carl Zeiss Smt Gmbh Illumination optical unit and optical system for EUV projection lithography
WO2014000763A1 (fr) * 2012-06-25 2014-01-03 Carl Zeiss Smt Gmbh Procédé de conception d'une optique d'éclairage, et optique d'éclairage
TWI576613B (zh) * 2012-06-25 2017-04-01 卡爾蔡司Ｓｍｔ有限公司 照明光學元件及照明光學元件的設計方法
WO2014012929A1 (fr) 2012-07-17 2014-01-23 Carl Zeiss Smt Gmbh Unité optique d'éclairage
US9891530B2 (en) 2012-07-17 2018-02-13 Carl Zeiss Smt Gmbh Illumination optical unit
CN105074574A (zh) * 2013-02-22 2015-11-18 卡尔蔡司Smt有限责任公司 Euv光刻装置的照明系统及其分面反射镜
US9551941B2 (en) 2013-02-22 2017-01-24 Carl Zeiss Smt Gmbh Illumination system for an EUV lithography device and facet mirror therefor
WO2014135448A1 (fr) * 2013-03-05 2014-09-12 Carl Zeiss Smt Gmbh Procédé destiné à éclairer un champ d'image
KR102401868B1 (ko) * 2014-02-21 2022-05-25 칼 짜이스 에스엠티 게엠베하 투영 노광 시스템의 오브젝트 필드를 조명하는 방법
KR20160124857A (ko) * 2014-02-21 2016-10-28 칼 짜이스 에스엠티 게엠베하 투영 노광 시스템의 오브젝트 필드를 조명하는 방법
US10409167B2 (en) 2014-02-21 2019-09-10 Carl Zeiss Smt Gmbh Method for illuminating an object field of a projection exposure system
US10133182B2 (en) 2014-09-03 2018-11-20 Carl Zeiss Smt Gmbh Illumination optical assembly for a projection exposure apparatus
DE102015209176A1 (de) 2015-05-20 2016-11-24 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithographie
WO2016184708A1 (fr) 2015-05-20 2016-11-24 Carl Zeiss Smt Gmbh Optique d'exposition pour lithographie par projection euv
US10379444B2 (en) 2015-05-20 2019-08-13 Carl Zeiss Smt Gmbh Illumination optic for EUV projection lithography
DE102015223980A1 (de) 2015-12-02 2016-10-20 Carl Zeiss Smt Gmbh Optische Baugruppe
DE102017212919A1 (de) 2016-11-10 2018-05-17 Carl Zeiss Smt Gmbh Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Beleuchtungssystem in einer EUV-Projektionsbelichtungsanlage
DE102016222033A1 (de) 2016-11-10 2016-12-29 Carl Zeiss Smt Gmbh Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Be-leuchtungssystem in einer EUV-Projektionsbelichtungsanlage
DE102017210990A1 (de) 2017-06-28 2017-08-31 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld mit EUV-Abbildungslicht
DE102017216703A1 (de) 2017-09-21 2019-03-21 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung mindestens einer optischen Komponente einer Projektionsbelichtungsanlage
WO2019057708A1 (fr) 2017-09-21 2019-03-28 Carl Zeiss Smt Gmbh Procédé de caractérisation d'au moins un composant optique d'une installation de lithographie par projection
DE102019209116A1 (de) 2018-11-06 2020-05-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithographie
DE102018218850A1 (de) 2018-11-06 2018-12-20 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithographie
WO2020221763A1 (fr) 2019-04-29 2020-11-05 Carl Zeiss Smt Gmbh Optique d'éclairage de mesure pour le guidage de lumière d'éclairage dans un champ d'objet d'une installation d'exposition par projection pour la lithographie euv
DE102019206057A1 (de) 2019-04-29 2019-06-19 Carl Zeiss Smt Gmbh Mess-Beleuchtungsoptik zur Führung von Beleuchtungslicht in ein Objektfeld einer Projektionsbelichtungsanlage für die EUV-Lithografie
US11720028B2 (en) 2019-04-29 2023-08-08 Carl Zeiss Smt Gmbh Measurement illumination optical unit for guiding illumination light into an object field of a projection exposure system for EUV lithography
WO2021028132A1 (fr) 2019-08-09 2021-02-18 Carl Zeiss Smt Gmbh Système d'éclairage optique servant à guider un rayonnement euv
DE102020200158A1 (de) 2020-01-09 2021-07-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
WO2021139904A1 (fr) 2020-01-09 2021-07-15 Carl Zeiss Smt Gmbh Optique d'éclairage pour la lithographie par projection euv
DE102020208665A1 (de) 2020-07-10 2022-01-13 Carl Zeiss Smt Gmbh Optisches Beleuchtungssystem zur Führung von EUV-Strahlung
WO2022008102A1 (fr) 2020-07-10 2022-01-13 Carl Zeiss Smt Gmbh Système d'éclairage optique servant à guider un rayonnement euv
DE102022206126A1 (de) 2022-06-20 2023-03-09 Carl Zeiss Smt Gmbh Bauteil zum Einsatz in einer Projektionsbelichtungsanlage

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