US20080153271A1 - Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers - Google Patents

Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers Download PDF

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US20080153271A1
US20080153271A1 US11/958,541 US95854107A US2008153271A1 US 20080153271 A1 US20080153271 A1 US 20080153271A1 US 95854107 A US95854107 A US 95854107A US 2008153271 A1 US2008153271 A1 US 2008153271A1
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layer
film
implanted
exposing
plasma
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Majeed A. Foad
Manoj Vellaikal
Kartik Santhanam
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Applied Materials Inc
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Applied Materials Inc
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Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SANTHANAM, KARTIK, FOAD, MAJEED A., VELLAIKAL, MANOJ
Publication of US20080153271A1 publication Critical patent/US20080153271A1/en
Priority to US12/730,068 priority patent/US20100173484A1/en
Priority to US14/275,408 priority patent/US8927400B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase

Definitions

  • Embodiments of the invention generally relate to the field of semiconductor manufacturing processes and, more particularly, to methods of making substrates that have been implanted with arsenic, phosphorus, or boron safer to handle.
  • Integrated circuits may include more than one million micro-electronic field effect transistors (e.g., complementary metal-oxide-semiconductor (CMOS) field effect transistors) that are formed on a substrate (e.g., semiconductor wafer) and cooperate to perform various functions within the circuit.
  • CMOS transistor comprises a gate structure disposed between source and drain regions that are formed in the substrate.
  • the gate structure generally comprises a gate electrode and a gate dielectric layer.
  • the gate electrode is disposed over the gate dielectric layer to control a flow of charge carriers in a channel region formed between the drain and source regions beneath the gate dielectric layer.
  • An ion implantation process is typically utilized to implant and dope ions into the substrate, forming the gate and source drain structure with desired profile and concentration on the substrate.
  • different process gases or gas mixtures may be used to provide ion source species such as arsenic, phosphorus, or boron.
  • Arsenic in particular, will react when exposed to moisture to produce arsenic oxide and arsine gas according to the following reaction:
  • Arsine gas is a highly toxic gas that is also flammable.
  • high doses of dopant i.e., about 1 ⁇ 10 16 l/cm 2 or more
  • low implantation energy i.e., about 2 kV
  • the dopant does not implant deeply into the layer stack.
  • more dopant is present near or at the surface of the layer stack and may be exposed to moisture upon removal from the chamber.
  • the arsenic residing near the surface may react to undesirably form arsine gas.
  • the present invention generally comprises a method of preventing toxic gas formation after an implantation process.
  • Certain dopants when implanted into a film disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas.
  • a dopant is initially implanted into a film formed on a substrate and then the implanted film is exposed to an oxygen containing gas to form a protective oxide layer.
  • the oxide layer may be formed in the same chamber in which the film was implanted.
  • a substrate processing method comprises implanting a dopant into a film disposed in a processing chamber and exposing the implanted film to an oxygen containing plasma to form an oxide layer on the implanted film and trap the dopant within the film prior to exposure of the implanted film to atmospheric oxygen.
  • a dopant is initially implanted into a film formed on a substrate and then a capping layer is deposited over the implanted film.
  • the capping layer may be deposited in the same chamber in which the film was implanted.
  • a substrate processing method comprises implanting a dopant into a film disposed on a substrate in a processing chamber and depositing a capping layer over the dopant implanted film prior to exposure of the implanted film to atmospheric oxygen, wherein the capping layer is selected from the group consisting of a carbon layer, a silicon layer, a silicon oxide layer, a silicon nitride layer, a silicon carbide layer, an organic layer, and combinations thereof.
  • a substrate processing method comprises implanting a dopant into a film disposed on a substrate in a processing chamber and removing excess dopants by etching the implanted film with a plasma formed from NF 3 prior to exposure of the implanted film to atmospheric oxygen.
  • FIGS. 1A-1B depict one embodiment of a plasma immersion ion implantation tool suitable for practicing the present invention.
  • FIG. 2 depicts a process diagram illustrating a method for a dopant oxide formation process according to one embodiment of the present invention.
  • FIG. 3 depicts a process diagram illustrating a method for an in-situ capping process according to one embodiment of the present invention.
  • FIG. 4 is a graph showing arsine gas formation over time.
  • FIG. 1A depicts a plasma reactor 100 that may be utilized to practice ion implantation, oxide layer formation, and capping layer formation according to one embodiment of the invention.
  • a plasma reactor 100 that may be utilized to practice ion implantation, oxide layer formation, and capping layer formation according to one embodiment of the invention.
  • One suitable reactor which may be adapted to practice the invention is a P3iTM reactor, available from Applied Materials, Inc., of Santa Clara, Calif.
  • Another reactor which may be adapted to practice the invention is described in U.S. patent application Ser. No. 11/608,357, filed Dec. 8, 2006, which is hereby incorporated by reference in its entirety. It is contemplated that the methods described herein may be practiced in other suitably adapted plasma reactors, including those from other manufacturers.
  • the plasma reactor 100 includes a chamber body 102 having a bottom 124 , a top 126 , and side walls 122 enclosing a process region 104 .
  • a substrate support assembly 128 is supported from the bottom 124 of the chamber body 102 and is adapted to receive a substrate 106 for processing.
  • a gas distribution plate 130 is coupled to the top 126 of the chamber body 102 facing the substrate support assembly 128 .
  • a pumping port 132 is defined in the chamber body 102 and coupled to a vacuum pump 134 .
  • the vacuum pump 134 is coupled through a throttle valve 136 to the pumping port 132 .
  • a gas source 152 is coupled to the gas distribution plate 130 to supply gaseous precursor compounds for processes performed on the substrate 106 .
  • the reactor 100 depicted in FIG. 1A further includes a plasma source 190 best shown in the perspective view of FIG. 1B .
  • the plasma source 190 includes a pair of separate external reentrant conduits 140 , 140 ′ mounted on the outside of the top 126 of the chamber body 102 disposed transverse to one another (or orthogonal to one another, as shown in the exemplary embodiment depicted in FIG. 1B ).
  • the first external conduit 140 has a first end 140 a coupled through an opening 198 formed in the top 126 into a first side of the process region 104 in the chamber body 102 .
  • a second end 140 b has an opening 196 coupled into a second side of the process region 104 .
  • the second external reentrant conduit 140 b has a first end 140 a ′ having an opening 194 coupled into a third side of the process region 104 and a second end 140 b ′ having an opening 192 into a fourth side of the process region 104 .
  • the first and second external reentrant conduits 140 , 140 ′ are configured to be orthogonal to one another, thereby providing the two ends 140 a , 140 a ′, 140 b . 140 b ′ of each external reentrant conduits 140 , 140 ′ disposed at about 90 degree intervals around the periphery of the top 126 of the chamber body 102 .
  • the orthogonal configuration of the external reentrant conduits 140 , 140 ′ allows a plasma source distributed uniformly across the process region 104 . It is contemplated that the first and second external reentrant conduits 140 , 140 ′ may be configured as other distributions utilized to provide uniform plasma distribution into the process region 104 .
  • Magnetically permeable torroidal cores 142 , 142 ′ surround a portion of a corresponding one of the external reentrant conduits 140 , 140 ′.
  • the conductive coils 144 , 144 ′ are coupled to respective RF plasma source power generators 146 , 146 ′ through respective impedance match circuits or elements 148 , 148 ′.
  • Each external reentrant conduit 140 , 140 ′ is a hollow conductive tube interrupted by an insulating annular ring 150 , 150 ′ respectively that interrupts an otherwise continuous electrical path between the two ends 140 a , 140 b (and 140 a ′, 104 b ′) of the respective external reentrant conduits 140 , 140 ′.
  • Ion energy at the substrate surface is controlled by an RF plasma bias power generator 154 coupled to the substrate support assembly 128 through an impedance match circuit or element 156 .
  • process gases including gaseous compounds supplied from the process gas source 152 are introduced through the overhead gas distribution plate 130 into the process region 104 .
  • RF source plasma power 146 is coupled from the power applicator to gases supplied in the conduit 140 , which creates a circulating plasma current in a first closed torroidal path including the external reentrant conduit 140 and the process region 104 .
  • RF source power 146 ′ may be coupled from the other power applicator to gases in the second conduit 140 ′, which creates a circulating plasma current in a second closed torroidal path transverse (e.g., orthogonal) to the first torroidal path.
  • the second torroidal path includes the second external reentrant conduit 140 ′ and the process region 104 .
  • the plasma currents in each of the paths oscillate (e.g., reverse direction) at the frequencies of the respective RF source power generators 146 , 146 ′, which may be the same or slightly offset from one another.
  • the process gas source 152 provides different process gases that may be utilized to provide ions implanted to the substrate 106 .
  • Suitable examples of process gases include B 2 H 6 , BF 3 , SiH 4 , SiF 4 , PH 3 , P 2 H 5 , PO 3 , PF 3 , PF 5 and CF 4 , among others.
  • the power of each plasma source power generators 146 , 146 ′ is operated so that their combined effect efficiently dissociates the process gases supplied from the process gas source 152 and produces a desired ion flux at the surface of the substrate 106 .
  • the power of the RF plasma bias power generator 154 is controlled at a selected level at which the ion energy dissociated from the process gases may be accelerated toward the substrate surface and implanted at a desired depth below the top surface of the substrate 106 with desired ion concentration. For example, with relatively low RF power, such as less than about 50 eV, relatively low plasma ion energy may be obtained. Dissociated ions with low ion energy may be implanted at a shallow depth between about 0 ⁇ and about 100 ⁇ from the substrate surface. Alternatively, dissociated ions with high ion energy provided and generated from high RF power, such as higher than about 50 eV, may be implanted into the substrate having a depth substantially over 100 ⁇ depth from the substrate surface.
  • the combination of the controlled RF plasma source power and RF plasma bias power dissociates ions in the gas mixture having sufficient momentum and desired ion distribution in the processing chamber 100 .
  • the ions are biased and driven toward the substrate surface, thereby implanting ions into the substrate with desired ion concentration, distribution and depth from the substrate surface.
  • the controlled ion energy and different types of ion species from the supplied process gases facilitates ions implanted in the substrate 106 , forming desired device structure, such as gate structure and source drain region on the substrate 106 .
  • FIG. 2 depicts a process flow diagram of a method 200 for forming a dopant oxide layer after an implantation process.
  • the method 200 begins at step 202 where a dopant is implanted into a film formed on a substrate.
  • the term film is a generic term encompassing one or more layers of material that may be stacked on the substrate.
  • the dopant comprises arsenic.
  • the dopant comprises phosphorus.
  • the dopant comprises boron.
  • the method continues at step 204 where the implanted (e.g., doped) layer is exposed to an oxygen containing gas.
  • the exposure may occur in-situ within the same chamber in which the layer was implanted.
  • the substrate having the doped layer may remain in the chamber after the implantation to ensure that the dopant is not exposed to moisture, which may react with the dopant to form a toxic or flammable gas.
  • the implanted (e.g., doped) layer may be exposed to the oxygen containing gas in a separate chamber without exposing the layer to atmosphere and hence, moisture.
  • oxygen reacts to form an oxide on the surface of the implanted film at step 206 .
  • the oxide may be that of the dopant and/or the implanted film.
  • Suitable oxygen containing gases that may be used include atomic oxygen (O), oxygen (O 2 ), ozone (O 3 ), nitrous oxide (N 2 O), nitric oxide (NO), nitrogen dioxide (NO 2 ), dinitrogen pentoxide (N 2 O 5 ), plasmas thereof, radicals thereof, derivatives thereof, combinations thereof, or other suitable oxygen sources.
  • the oxygen containing gas may be ignited into a plasma.
  • the oxygen containing gas is ignited within the same processing chamber as the implantation.
  • the plasma is ignited remotely and delivered to the chamber.
  • the plasma may be generated by a capacitive source and/or an inductive source.
  • the implanted layer may be exposed to a hydrogen containing gas.
  • the implanted layer may be exposed to the hydrogen containing gas either prior to or after the exposure to the oxygen containing gas.
  • the hydrogen containing gas comprises hydrogen gas.
  • the exposure to a hydrogen containing gas and the exposure to the oxygen containing gas may be repeated a plurality of times.
  • the hydrogen containing gas may be ignited into a plasma.
  • the hydrogen containing gas is ignited within the same processing chamber as the implantation.
  • the plasma is ignited remotely and delivered to the chamber.
  • the plasma may be generated by a capacitive source and/or an inductive source.
  • the hydrogen containing gas exposure and the oxygen containing gas exposure may occur within the same processing chamber, but at separate intervals.
  • a capping layer may be deposited over the oxide layer formed on the implanted layer.
  • the capping layer may be selected from the group consisting of a carbon layer, a silicon layer, a silicon oxide layer, a silicon nitride layer, a silicon carbide layer, an organic layer, and combinations thereof.
  • the capping layer may be deposited over the oxide layer within the same processing chamber as the implantation. In one embodiment, the capping layer may be deposited in a separate chamber without exposing the layer to atmosphere and hence, moisture. The capping layer may be removed after annealing.
  • the implanted layer may be exposed to a gas to remove excess dopants.
  • the dopants may not activate and thus, hydride formation may be reduced.
  • the gas may comprise an etching gas.
  • the gas may comprise NF 3 . The removal of excess dopants may occur within the same processing chamber as the implantation. In one embodiment, the removal of excess dopants may occur in a separate chamber without exposing the layer to atmosphere and hence, moisture.
  • the oxide layer formation, the capping layer formation, and the removal of excess dopants may be utilized in any combination.
  • the oxide layer is formed and no capping layer is formed and excess dopants are not removed.
  • the capping layer is formed and no oxide layer is formed and excess dopants are not removed.
  • the excess dopants are removed, but no oxide layer or capping layer is formed.
  • the oxide layer and the capping layer are formed, but excess dopants are not removed.
  • the oxide layer is formed and excess dopants are removed, but the capping layer is not formed.
  • the capping layer is formed and the excess dopants are removed, but the oxide layer is not formed.
  • the hydrogen containing gas exposure may occur in any combination with the above oxide layer formation, capping layer formation, and removal of excess dopants.
  • the oxygen containing gas may be provided to the chamber at a flow rate of about 300 sccm to about 450 sccm. In another embodiment, the flow rate of oxygen containing gas may be greater than 450 sccm.
  • the oxide layer is formed in the chamber by exposing the implanted film for about 3 seconds to about 10 seconds at a chamber pressure of about 15 mTorr to about 300 mTorr.
  • the oxygen containing gas may be co-flowed to the chamber with a carrier gas.
  • the carrier gas may have a flow rate of about 50 sccm.
  • the carrier gas may comprise an inert gas. In one embodiment, the carrier gas comprises argon.
  • FIG. 3 depicts a process flow diagram of a method 300 for forming a capping layer after an implantation process.
  • the method 300 begins at step 302 where a dopant is implanted into a film formed on a substrate.
  • the dopant may be as described above.
  • the method continues at step 304 where gases that may be used to deposit a capping layer over the doped layer stack in step 306 are provided.
  • the capping layer may be deposited in-situ the same chamber in which the layer was implanted. By capping the implanted substrate in-situ the same chamber ensures that the dopant is not exposed to moisture, which may react with the dopant to form a toxic or flammable gas.
  • the capping layer may be deposited by a chemical vapor deposition (CVD) process.
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • the capping layer may include silicon, oxygen, nitrogen, carbon, and combinations thereof. Suitable gases that may be introduced to the chamber include silicon containing gases, oxygen containing gases as described above, nitrogen containing gases, and carbon containing gases.
  • the capping layer comprises a silicon layer.
  • the capping layer comprises a silicon oxide layer.
  • the capping layer comprises a silicon nitride layer.
  • the capping layer comprises a silicon carbide layer.
  • suitable silicon gases for forming the capping layer include aminosilanes, aminodisilanes, silylazides, silylhydrazines, or derivatives thereof.
  • silicon gases include bis(tertbutylamino)silane (BTBAS or ( t Bu(H)N) 2 SiH 2 ), hexachlorodisilane (HCD or Si 2 Cl 6 ), tetrachlorosilane (SiCl 4 ), dichlorosilane (H 2 SiCl 2 ), 1,2-diethyl-tetrakis(diethylamino) disilane ((CH 2 CH 3 ((CH 3 CH 2 ) 2 N) 2 Si) 2 ), 1,2-dichloro-tetrakis(diethylamino) disilane ((Cl((CH 3 CH 2 ) 2 N) 2 Si) 2 ), hexakis(N-pyrrolidinio) disilane (((C 4 H 9 N)
  • Suitable silicon gases include compounds having one or more Si—N bonds or Si—Cl bonds, such as bis(tertbutylamino)silane (BTBAS or ( t Bu(H)N) 2 SiH 2 ) or hexachlorodisilane (HCD or Si 2 Cl 6 ).
  • BBAS bis(tertbutylamino)silane
  • HCD hexachlorodisilane
  • Silicon gases having preferred bond structures described above have the chemical formulas:
  • R and R′ may be one or more functional groups independently selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilyl group, an alkylamino group, or a cyclic group containing N or Si, or combinations thereof.
  • Specific functional groups include chloro (—Cl), methyl (—CH 3 ), ethyl (—CH 2 CH 3 ), isopropyl (—CH(CH 3 ) 2 ), tertbutyl (—C(CH 3 ) 3 ), trimethylsilyl (—Si(CH 3 ) 3 ), pyrrolidine, or combinations thereof.
  • Suitable silicon gases include silylazides R 3 —SiN 3 and silylhydrazine class of gases R 3 SiNRNR 2 , linear and cyclic with any combination of R groups.
  • the R groups may be H or any organic functional group such as methyl, ethyl, propyl, butyl, and the like (C X H Y ).
  • the R groups attached to Si can optionally be another amino group NH 2 or NR 2 .
  • Examples of specific silylazide compounds include trimethylsilylazide ((CH 3 ) 3 SiN 3 ) (available from United Chemical Technologies, located in Bristol, Pa.) and tris(dimethylamine)silylazide (((CH 3 ) 2 N) 3 SiN 3 ).
  • a specific silylhydrazine compound is 1,1-dimethyl-2-dimethylsilylhydrazine ((CH 3 ) 2 HSiNHN(CH 3 ) 2 ).
  • a silicon-nitrogen gas may be at least one of (R 3 Si) 3 N, (R 3 Si) 2 NN(SiR 3 ) 2 and (R 3 Si)NN(SiR 3 ), wherein each R is independently hydrogen or an alkyl, such as methyl, ethyl, propyl, butyl, phenyl, or combinations thereof.
  • suitable silicon-nitrogen gases include trisilylamine ((H 3 Si) 3 N), (H 3 Si) 2 N N(SiH 3 ) 2 , (H 3 Si)NN(SiH 3 ), or derivatives thereof.
  • nitrogen gases examples include ammonia (NH 3 ), hydrazine (N 2 H 4 ), organic amines, organic hydrazines, organic diazines (e.g., methyldiazine ((H 3 C)NNH)), silylazides, silylhydrazines, hydrogen azide (HN 3 ), hydrogen cyanide (HCN), atomic nitrogen (N), nitrogen (N 2 ), phenylhydrazine, azotertbutane, ethylazide, derivatives thereof, or combinations thereof.
  • Organic amines include R x NH 3-x , where each R is independently an alkyl group or an aryl group and x is 1, 2, or 3.
  • organic amines examples include trimethylamine ((CH 3 ) 3 N), dimethylamine ((CH 3 ) 2 NH), methylamine ((CH 3 )NH 2 )), triethylamine ((CH 3 CH 2 ) 3 N), diethylamine ((CH 3 CH 2 ) 2 NH), ethylamine ((CH 3 CH 2 )NH 2 )), tertbutylamine (((CH 3 ) 3 C)NH 2 ), derivatives thereof, or combinations thereof.
  • Organic hydrazines include R x N 2 H 4-x , where each R is independently an alkyl group or an aryl group and x is 1, 2, 3, or 4.
  • organic hydrazines examples include methylhydrazine ((CH 3 )N 2 H 3 ), dimethylhydrazine ((CH 3 ) 2 N 2 H 2 ), ethylhydrazine ((CH 3 CH 2 )N 2 H 3 ), diethylhydrazine ((CH 3 CH 2 ) 2 N 2 H 2 ), tertbutylhydrazine (((CH 3 ) 3 C)N 2 H 3 ), ditertbutylhydrazine (((CH 3 ) 3 C) 2 N 2 H 2 ), radicals thereof, plasmas thereof, derivatives thereof, or combinations thereof.
  • Carbon sources include organosilanes, alkyls, alkenes and alkynes of ethyl, propyl and butyl.
  • Such carbon sources include methylsilane (CH 3 SiH 3 ), dimethylsilane ((CH 3 ) 2 SiH 2 ), ethylsilane (CH 3 CH 2 SiH 3 ), methane (CH 4 ), ethylene (C 2 H 4 ), ethyne (C 2 H 2 ), propane (C 3 H 8 ), propene (C 3 H 6 ), butyne (C 4 H 6 ), as well as others.
  • the capping layer formation gases may be provided to the chamber with a carrier gas.
  • argon is used as the carrier gas and may be provided at a flow rate of about 300 sccm.
  • RF power may be supplied at about 200 Watts to about 2000 Watts during CVD.
  • a silicon dioxide layer may be deposited over the implanted film by flowing silane gas at 15 sccm, oxygen gas at about 50 sccm to about 60 sccm, argon gas at about 300 sccm, and applying an RF bias of about 200 watts. The deposition occurs for about 1 minute to about 2 minutes and deposits a silicon dioxide capping layer of about 50 Angstroms to about 60 Angstroms thickness.
  • the capping layer may be deposited over an oxide layer formed using the method 200 .
  • the capping layer is removed prior to further processing.
  • the oxide layer or capping layer deposited in-situ may be removed during later processing and should be thick enough to reduce and/or prevent the dopants from producing toxic and/or flammable gases.
  • the oxide or capping layer should also be thin enough that it can be easily removed, for example by a stripping process, without adding excessive processing time or damage to the layer stack.
  • Table I shows data for five different substrates that were implanted with arsenic as a dopant at 2 kV implantation power and 1 ⁇ 10 16 l/cm 2 dosage level. For each substrate, a different exposure/capping process occurred.
  • arsenic oxide layer naturally forms when the arsenic is exposed to moisture, along with arsine gas.
  • the arsenic oxide layer formed to a thickness of 34.85 Angstroms on the first day and the thickness increased to 42.65 Angstroms by the fifth day.
  • the implanted film was exposed to oxygen gas for ten seconds without striking a plasma.
  • An arsenic oxide layer was formed to a thickness of 37.38 Angstroms. The thickness was reduced to 36.75 Angstroms by the fifth day. The amount of arsine gas produced was undetectable.
  • the implanted film was exposed to an oxygen plasma for 3 seconds without applying a bias.
  • the arsenic oxide layer was formed to a thickness of 51.19 Angstroms.
  • the thickness increased to 56.19 Angstroms by the fifth day.
  • the amount of arsine gas produced was undetectable.
  • the implanted film was exposed to an oxygen plasma for 7 seconds without applying a bias.
  • the arsenic oxide layer was formed to a thickness of 47.15 angstroms that increased to 47.57 Angstroms by the third day and increased to 49.93 Angstroms by the fifth day.
  • the amount of arsine gas produced was undetectable.
  • a silicon dioxide layer was deposited over the implanted film by introducing a plasma of SiH 2 and O 2 for 3 seconds.
  • the silicon dioxide layer was formed to a thickness of 56.73 Angstroms. By the fifth day, the thickness has increased to 59.52 Angstroms. The amount of arsine gas produced was undetectable.
  • substrates 1-4 The arsine evolution for substrates 1-4 is shown in FIG. 4 .
  • substrate 1 which does not have an oxide layer formed in-situ, initially permits a large amount of arsine gas to form in addition to and oxide layer.
  • Substrates 2-4 have a much smaller amount of arsine gas that is permitted to form.
  • Substrates 2-4 are exposed to oxygen in-situ within the same chamber in which the layer was implanted and thus, have less arsenic available to produce arsine gas upon exposure to moisture. Because less arsine is formed, substrates 2-4 are much safer to handle.
  • Oxidizing a dopant implanted film in-situ and/or depositing a capping layer over a dopant implanted film in-situ reduces the amount of toxic and/or flammable gases that may be produced upon exposing the layer stack to moisture. It is also contemplated that the implantation and oxidation (or capping) steps may be performed in separate chambers as long as the substrate remains under vacuum between the implantation and oxidation/capping process.

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