US20080084650A1 - Apparatus and method for substrate clamping in a plasma chamber - Google Patents

Apparatus and method for substrate clamping in a plasma chamber Download PDF

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Publication number
US20080084650A1
US20080084650A1 US11/866,646 US86664607A US2008084650A1 US 20080084650 A1 US20080084650 A1 US 20080084650A1 US 86664607 A US86664607 A US 86664607A US 2008084650 A1 US2008084650 A1 US 2008084650A1
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United States
Prior art keywords
substrate
electrostatic chuck
electrode
imaginary impedance
flatness
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Abandoned
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US11/866,646
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English (en)
Inventor
Ganesh Balasubramanian
Amit Bansal
Eller Juco
Mohamad Ayoub
Hyung-Joon Kim
Karthik Janakiraman
Sudha Rathi
Deenesh Padhi
Martin Seamons
Visweswaren Sivaramakrishnan
Bok Kim
Amir Al-Bayati
Derek Witty
Hichem M'Saad
Anton Baryshnikov
Chiu Chan
Shuang Liu
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Applied Materials Inc
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Applied Materials Inc
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Publication date
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Priority to US11/866,646 priority Critical patent/US20080084650A1/en
Priority to CN2007800374811A priority patent/CN101523357B/zh
Priority to PCT/US2007/080491 priority patent/WO2008043047A2/fr
Priority to KR1020077024574A priority patent/KR100939594B1/ko
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AL-BAYATI, AMIR, BANSAL, AMIT, RATHI, SUDHA, KIM, BOK HOEN, CHAN, CHIU, WITTY, DEREK R., JANAKIRAMAN, KARTHIK, PADHI, DEENESH, SEAMONS, MARTIN JAY, AYOUB, MOHAMAD, BALASUBRAMANIAN, GANESH, BARYSHNIKOV, ANTON, KIM, HYUNG-JOON, LIU, SHUANG, M'SAAD, HICHEM, SIVARAMAKRISHNAN, VISWESWAREN, JUCO, ELLER Y
Publication of US20080084650A1 publication Critical patent/US20080084650A1/en
Priority to US12/950,105 priority patent/US9337072B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Definitions

  • Embodiments of the present invention generally relate to an apparatus and method for processing semiconductor substrates. More particularly, embodiments of the present invention relate to an electrostatic chuck used in a plasma chamber.
  • Plasma enhance processes such as plasma enhanced chemical vapor deposition (PECVD) process, high density plasma chemical vapor deposition (HDPCVD) process, plasma immersion ion implantation process (P31), and plasma etch process, have become essential in semiconductor processing.
  • PECVD plasma enhanced chemical vapor deposition
  • HDPCVD high density plasma chemical vapor deposition
  • P31 plasma immersion ion implantation process
  • plasma etch process have become essential in semiconductor processing.
  • Plasma provides many advantages in manufacturing semiconductor devices. For example, using plasma enables a wide range of applications due to lowered processing temperature, plasma enhanced deposition has excellent gap-fill for high aspect ratio gaps and high deposition rates.
  • a substrate being processed especially for a device substrate, i.e. a patterned substrate.
  • Semiconductor devices are formed by stacking layers of materials by certain pattern on a semiconductor substrate.
  • a patterned substrate may “bow” during processes due to differences in thermal expansion among layers of different materials, particularly when the substrate is being heated. Bowing of the substrate may lead to non uniformity of the process surface.
  • Sides and back of a bowed substrate may be processed which not only wastes processing material, as precursors for plasma processing are usually very expensive, but also causes contaminations and other troubles for subsequent process steps.
  • FIG. 1 schematically illustrates a substrate bowing scenario during a plasma process.
  • a plasma reactor 10 comprises an electrode 12 connected to a radio frequency (RF) power 17 through an impedance matching circuit 16 .
  • a grounded electrode 11 is configured to support a substrate 13 thereon.
  • the electrode 12 and the grounded electrode 11 form a capacitive plasma generator.
  • RF radio frequency
  • a plasma 15 may be generated from any precursor gas supplied between the electrode 12 and the grounded electrode 11 to process the substrate 13 .
  • the substrate 13 may be heated by a heater 18 embedded in the grounded electrode 11 .
  • the plasma 15 also heats the substrate 13 during process.
  • a plasma processing temperature may be between about 250° C. to about 450° C.
  • the substrate 13 may bow as temperature rises. In some cases, the edge of a 300 mm substrate may bow as much as 0.4 mm.
  • the bowing substrates are sometime referred as substrates with high curvatures.
  • Bowing of a substrate presents a challenge for process uniformity on a device side 14 of the substrate 13 , which becomes more and more critical as feature size shrinks.
  • External means such as an electrostatic chuck or a vacuum chuck, are used to keep a substrate flat during processing.
  • a chucked substrate may still become deformed during a plasma process due to heat dissipated by the plasma.
  • the present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor.
  • Certain embodiments of the present invention provide a method for processing a substrate, comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
  • Certain embodiments of the present invention provide a method for monitoring a substrate during a plasma process, comprising positioning the substrate in a plasma generator having first and second parallel electrodes, wherein the substrate is positioned between the first and second parallel electrodes and substantially parallel to the first and second parallel electrodes, applying an RF power between the first and second electrodes of the plasma generator, and monitoring the substrate by measuring a characteristic of the plasma generator.
  • Certain embodiments of the present invention provide an apparatus for processing a substrate, comprising an electrostatic chuck comprising a first electrode connected with a DC power supply, wherein the electrostatic chuck has a supporting surface configured to support the substrate thereon, a counter electrode positioned substantially parallel to the supporting surface of the electrostatic chuck, wherein the counter electrode is positioned a distance apart from the electrostatic chuck, the substrate is configured to be positioned between the electrostatic chuck and the counter electrode, a RF power supply configured to apply a RF power between the first electrode and the counter electrode, and a sensor configured to measure a characteristic of the electrostatic chuck.
  • FIG. 1 schematically illustrates a substrate bowing scenario during a plasma process.
  • FIG. 2 schematically illustrates a cross sectional view of a PECVD system in accordance with one embodiment of the present invention.
  • FIG. 3 is a schematic side view of a plasma processing chamber having an electrostatic chuck in accordance with one embodiment of the present invention.
  • FIG. 4 schematically illustrates an electrostatic chuck clamp design in accordance with one embodiment of the present invention.
  • FIG. 5 is a graph showing the imaginary chamber impedance.
  • FIG. 6 is a graph showing real chamber impedance.
  • FIG. 7 schematically illustrates a chart showing coordination between imaginary impedance of an electrostatic chuck and flatness of a substrate positioned on the electrostatic chuck.
  • FIG. 8 schematically illustrates a chart showing measurements of imaginary impedance and calculated slopes of measured imaginary impedance of an electrostatic chuck.
  • the present invention generally provides methods and apparatus for monitoring and maintaining sufficient flatness of a substrate being processed in a plasma reactor having a plasma generator with parallel electrodes.
  • FIG. 2 illustrates a cross sectional view of a PECVD system 100 in accordance with the present invention. Descriptions of similar PECVD systems may be found in U.S. Pat. No. 5,855,681, U.S. Pat. No. 6,495,233, and U.S. Pat. No. 6,364,954.
  • the PECVD system 100 generally comprises a chamber body 102 supporting a chamber lid 104 which may be attached to the chamber body 102 by a hinge.
  • the chamber body 102 comprises sidewalls 112 and a bottom wall 116 defining a processing region 120 .
  • the chamber lid 104 may comprise one or more gas distribution systems 108 disposed therethrough for delivering reactant and cleaning gases into the processing region 120 .
  • a circumferential pumping channel 125 formed in the sidewalls 112 and coupled to a pumping system 164 is configured for exhausting gases from the processing region 120 and controlling the pressure within the processing region 120 .
  • Two passages 122 and 124 are formed in the bottom wall 116 .
  • a stem 126 of an electrostatic chuck passes through the passage 122 .
  • a rod 130 configured to activate substrate lift pins 161 passes through the passage 124 .
  • a chamber liner 127 preferably made of ceramic or the like, is disposed in the processing region 120 to protect the sidewalls 112 from the corrosive processing environment.
  • the chamber liner 127 may be supported by a ledge 129 formed in the sidewalls 112 .
  • a plurality of exhaust ports 131 may be formed on the chamber liner 127 .
  • the plurality of exhaust ports 131 is configured to connect the processing region 120 to the pumping channel 125 .
  • the gas distribution system 108 is configured to deliver reactant and cleaning gases and is disposed through the chamber lid 104 to deliver gases into the processing region 120 .
  • the gas distribution system 108 includes a gas inlet passage 140 which delivers gas into a shower head assembly 142 .
  • the showerhead assembly 142 is comprised of an annular base plate 148 having a blocker plate 144 disposed intermediate to a faceplate 146 .
  • a cooling channel 147 is formed in the base plate 148 of the gas distribution system 108 to cool the base plate 148 during operation.
  • a cooling inlet 145 delivers a coolant fluid, such as water or the like, into the cooling channel 147 .
  • the coolant fluid exits the cooling channel 147 through a coolant outlet 149 .
  • the chamber lid 104 has matching passages to deliver gases from one or more gas inlets 168 , 163 , 169 through a remote plasma source 162 to a gas inlet manifold 167 positioned on top of the chamber lid 104 .
  • the PECVD system 100 may comprise one or more liquid delivery sources 150 and one or more gas sources 172 configured to provide a carrier gas and/or a precursor gas.
  • the electrostatic chuck 128 is configured for supporting and holding a substrate being processed.
  • the electrostatic chuck 128 may comprise at least one electrode 123 to which a voltage is applied to electrostatically secure a substrate thereon.
  • the electrode 123 is powered by a direct current (DC) power supply 176 connected to the electrode 123 via a low pass filter 177 .
  • DC direct current
  • the electrostatic chuck 128 may be bipolar, tripolar, DC, interdgitated, zonal and the like.
  • the electrostatic chuck 128 is movably disposed in the processing region 120 driven by a drive system 103 coupled to the stem 126 .
  • the electrostatic chuck 128 may comprise heating elements, for example resistive elements, to heat a substrate positioned thereon to a desired process temperature.
  • the electrostatic chuck 128 may be heated by an outside heating element such as a lamp assembly.
  • the drive system 103 may include linear actuators, or a motor and reduction gearing assembly, to lower or raise the electrostatic chuck 128 within the processing region 120 .
  • An RF source 165 is coupled to the shower head assembly 142 through an impedance matching circuit 173 .
  • the faceplate 146 of the showerhead assembly 142 and the electrode 123 which may be grounded via a high pass filter, such as a capacitor 178 , form a capacitive plasma generator.
  • the RF source 165 provides RF energy to the showerhead assembly 142 to facilitate generation of a capacitive plasma between the faceplate 146 of the showerhead assembly 142 and the electrostatic chuck 128 .
  • the electrode 123 provides both a ground path for the RF source 165 and an electric bias from the DC source 176 to enable electrostatic clamping of the substrate.
  • the RF source 165 may comprise a high frequency radio frequency (HFRF) power source, e.g., a 13.56 MHz RF generator, and a low frequency radio frequency (LFRF) power source, e.g., a 300 kHz RF generator.
  • HFRF high frequency radio frequency
  • LFRF low frequency radio frequency
  • the LFRF power source provides both low frequency generation and fixed match elements.
  • the HFRF power source is designed for use with a fixed match and regulates the power delivered to the load, eliminating concerns about forward and reflected power.
  • properties of a substrate secured on the electrostatic chuck 128 may be monitored during a plasma process.
  • flatness of a substrate secured on the electrostatic chuck 128 may be monitored during a plasma process.
  • flatness of a substrate secured on the electrostatic chuck 128 may be monitored by measuring characteristics of the electrostatic chuck 128 with the substrate secured thereon.
  • impedance of the electrostatic chuck 128 may be measured to monitor the flatness of a substrate secured thereon.
  • impedance of the electrostatic chuck 128 is measured by a sensor 174 connected with the faceplate 146 .
  • the sensor 174 may be a VI probe connected between the faceplate 146 and the impedance matching circuit 173 .
  • the sensor 174 may be configured to measure impedance of the electrostatic chuck 174 by measuring voltage and current of the capacitor formed by the faceplate 146 and the electrode 123 .
  • capacitance between the faceplate 146 and the electrode 123 is effected by the flatness of a substrate 121 positioned between the faceplate 146 and the electrode 123 .
  • An electrostatic chuck such as the electrostatic chuck 128 , has an increased capacitive reactance when a substrate disposed thereon becomes less flat.
  • a substrate is not flat, for example deformed from the heat of the plasma, there is non uniform distribution of air gap between the substrate and the electrostatic chuck 128 . Therefore, variation in flatness of the substrate in an electrostatic chuck results in variation of capacitance of the plasma reactor, which may be measured by variation of imaginary impedance of the electrostatic chuck.
  • a substrate positioned on an electrostatic chuck may increase in curvature due to deformation from heating, increased thickness of deposited film, lost of chucking power, or the combination thereof.
  • the deformation of the substrate may increase non-uniformity of the process.
  • flatness of the substrate being processed may be monitored by measuring imaginary impedance of an electrostatic chuck that secures the substrate.
  • chucking voltage of the electrostatic chuck may be adjusted to correct substrate deformation.
  • the sensor 174 may be connected to a system controller 175 .
  • the system controller 175 may be configured to calculate and adjust the flatness of the substrate 121 being processed in the PECVD system 100 .
  • the system controller 175 may calculate flatness or chucking status of the substrate 121 by monitoring imaginary impedance of the electrostatic chuck 128 .
  • the system controller 175 may increase chucking power by adjusting the DC source 176 .
  • decreased flatness of the substrate 121 may be indicated by negatively increased imaginary impedance of the electrostatic chuck 128 .
  • FIG. 3 is a schematic side view of a plasma processing chamber 200 having a substrate support 210 in accordance with one embodiment of the present invention.
  • the plasma processing chamber 200 comprises sidewalls 202 , a bottom 203 , and a lid 204 to define an interior volume 220 .
  • the interior volume 220 is in fluid communication with a vacuum system 264 .
  • a substrate support 210 for supporting a substrate 221 and a faceplate 246 or showerhead to supply a process gas are disposed in the interior volume 220 .
  • An RF source 265 is coupled to the faceplate 246 through an impedance matching circuit 273 .
  • the faceplate 246 and the electrode 223 which may be grounded via a high pass filter, such as a capacitor, form a capacitive plasma generator.
  • the RF source 265 provides RF energy to the faceplate 246 to facilitate generation of a capacitive plasma between the faceplate 246 and the substrate support 210 .
  • the RF source 265 may comprise a high frequency radio frequency (HFRF) power source, e.g., a 13.56 MHz RF generator, and a low frequency radio frequency (LFRF) power source, e.g., a 300 kHz RF generator.
  • HFRF high frequency radio frequency
  • LFRF low frequency radio frequency
  • the LFRF power source provides both low frequency generation and fixed match elements.
  • the HFRF power source is designed for use with a fixed match and regulates the power delivered to the load, eliminating concerns about forward and reflected power.
  • the substrate support 210 is an electrostatic chuck to provide support and clamp the substrate 221 during processing and, in one embodiment, the electrostatic chuck is a mono polar electrostatic chuck.
  • the substrate support 210 comprises a body 228 coupled to a support stem 226 .
  • the body 228 may comprise a ceramic material, such as aluminum oxide (Al 2 O 3 ), aluminum nitride (AIN), silicon dioxide (SiO 2 ), or other ceramic materials.
  • the body 228 of the substrate support 210 is configured to be used in a temperature in the range of about ⁇ 20 degrees C. to about 700 degrees C.
  • the body 228 may also be disposed in, or coated with, a dielectric layer 222 .
  • the body 228 also includes an embedded heater 288 , which may be a resistive heater, cartridge heaters, or the like, to provide heat to the body 228 .
  • the heat from the heater 288 is then transferred to the substrate 221 to enhance a fabrication process, such as a deposition process.
  • the heater 288 is coupled to a power source 283 through the stem 226 to supply power to the heater 288 .
  • the heater 288 may be a mesh or a perforated sheet of material made of molybdenum (Mo), tungsten (W), or other material with a substantially similar coefficient of expansion to that of the ceramic material comprising the body 228 .
  • a temperature sensor 285 is embedded in the body 228 .
  • the temperature sensor 285 may be a thermal couple.
  • the temperature sensor 285 may be connected to a temperature controller 284 which provides control signal to the power source 283 to control the temperature of the body 228 .
  • the body 228 of the substrate support 210 further comprises an electrode 223 that may at least provide a path to ground for radio frequency (RF) power.
  • RF radio frequency
  • Some commercially used substrate supports have a biasing electrode embedded or disposed in the body of the substrate supports (not shown).
  • the biasing electrode functions to provide an electrical bias to the substrate to promote or enhance the electrostatic clamping of the substrate.
  • the biasing electrode is replaced by the electrode 223 , wherein the electrode 223 provides a ground path for RF power and also provides an electrical bias to the substrate 221 to enable electrostatic clamping of the substrate.
  • the electrode 223 may be a mesh or a perforated sheet of material made of molybdenum (Mo), tungsten (W), or other material with a substantially similar coefficient of expansion to that of the ceramic material comprising the body 228 .
  • the electrode 223 is coupled to a conductive member 286 .
  • the conductive member 286 may be a rod, a tube, wires, or the like, and be made of a conductive material, such as molybdenum (Mo), tungsten (W), or other material with a substantially similar coefficient of expansion with other materials comprising the substrate support 210 .
  • Mo molybdenum
  • W tungsten
  • the electrode 223 provides both a ground path for the RF source 265 and an electric bias to enable electrostatic clamping of a substrate.
  • the electrode 223 is in electronic communication with a Power supply system 280 that supplies a biasing voltage to the electrode 223 .
  • the CD power supply 280 includes a power source 276 that may be a direct current (DC) power source to supply a DC signal to the electrode 223 .
  • the power source 276 is a 24 volt DC power supply and the electrical signal may provide a positive or negative bias.
  • the power source 276 may be coupled to an amplifier 279 to amplify the electrical signal from the power source 276 .
  • the amplified electrical signal travels to the conductive member 286 by a connector 282 , and may travel through a filter 277 to filter the amplified signal to remove noise and/or remove any RF current from the biasing voltage from the power supply system 280 .
  • the amplified and filtered electrical signal is provided to the electrode 223 and the substrate 221 to enable electrostatic clamping of the substrate 221 .
  • the electrode 223 also functions as an RF ground, wherein RF power is coupled to ground by a connector 281 .
  • a capacitor 278 may also be coupled to the ground path to prevent the biasing voltage from going to ground.
  • the capacitor 278 may be a 0.054 micro Farad ( ⁇ F), 10-15 amps at about 2000 volts. In this manner, the electrode 223 functions as a substrate biasing electrode and an RF return electrode.
  • the chamber impedance is evaluated and monitored to monitor positive clamping of the substrate to the substrate support 210 .
  • the impedance may be monitored by RF diagnostics, such as monitoring the RF match, using a probe sold under the trade name of Z-SCANTM, a current/voltage probe, or the like.
  • impedance of the chamber is measured by a sensor 274 connected with the faceplate 246 .
  • the sensor 274 may be a VI probe connected between the faceplate 146 and the impedance matching circuit 273 .
  • the sensor 274 may be configured to measure impedance of the electrostatic chuck 210 by measuring voltage and current of the capacitor formed by the faceplate 246 and the electrode 223 .
  • capacitance between the faceplate 246 and the electrode 223 is effected by the flatness of a substrate 221 positioned between the faceplate 246 and the electrode 223 .
  • An electrostatic chuck such as the substrate support 210 , has an increased capacitive reactance when a substrate disposed thereon becomes less flat.
  • a substrate is not flat, for example deformed from the heat of the plasma, there is non uniform distribution of air gap between the substrate and the substrate support 210 . Therefore, variation in flatness of the substrate in an electrostatic chuck results in variation of capacitance of the plasma reactor, which may be measured by variation of imaginary impedance of the electrostatic chuck.
  • the sensor 274 may be connected to a system controller 275 .
  • the system controller 275 may be configured to calculate and adjust the flatness of the substrate 221 being processed in the plasma processing chamber 200 .
  • the system controller 275 may calculate flatness or chucking status of the substrate 221 by monitoring imaginary impedance. When measurement of the imaginary impedance indicates that the substrate 221 decreases in flatness, the system controller 275 may increase chucking power by adjusting the power source 276 .
  • decreased flatness of the substrate 221 may be indicated by negatively increased imaginary impedance of the substrate support 210 .
  • FIG. 4 schematically illustrates an exploded view of an electrostatic chuck clamp design in accordance with one embodiment of the present invention.
  • the electrode 223 of the substrate support 210 is connected to the ground to provide a return path for the RF source 265 that provides RF energy for plasma generation, and is also connected to the Power supply system 280 to provide a bias for electrostatically clamp the substrate 221 .
  • the electrode 223 is coupled to the conductive member 286 , which extends through the support stem 226 .
  • An extended clamp 291 is clamped to the conductive member 286 .
  • a multi-contact connector 292 is coupled to the extended clamp 291 . In one embodiment, the multi-contact connector 292 is silver brazed to the extended clamp 291 .
  • the multi-contact connector 292 is inserted into a RF bar 293 configured to provide one or more electronic connections.
  • Exemplary multi-contact connector 292 is available from Multi-Contact AG, Basel, Switzerland.
  • the connector 281 , 282 which are in electronic communication with the return path of the RF source 265 and the Power supply system 280 respectively, may be connected to the conductive member 286 through the RF bar 293 .
  • FIG. 5 is a graph showing the imaginary impedance of the chamber
  • FIG. 6 shows real chamber impedance when the electrode 223 and Power supply system 280 are used.
  • a bare silicon substrate wafer was used, and wafers having a film or layers of materials deposited thereon, which caused the wafers to become non-planar or bow to about 10 microns from flat, about 300 microns from flat, and about 400 microns from flat were used.
  • the graphs show positive clamping and flattening of the wafers by increasing the biasing voltage over time.
  • the chucking of the wafers is observed by monitoring chamber impedance. Positive chucking of the wafers is observed when impedance of the chamber is constant.
  • the substrate support 210 having the electrode 223 and Power supply system 280 enables numerous benefits for plasma processing of semiconductor substrates.
  • the power adjustment and positive clamping increases throughput by eliminating or minimizing adverse effects that may be produced by non-planar substrates.
  • a non-planar substrate is provided to the substrate support 210 , such as a convex or concave substrate
  • the electrical signal from the power source 276 may be slowly increased to bring the center or edge of the substrate into contact with the receiving surface of the substrate support 210 as needed.
  • the substrate is flattened and is in more uniform communication with the substrate support, which increases global thickness uniformity of deposited materials. Normalization between chambers may also be enhanced as the substrates are transferred from chamber to chamber with varying degrees of bowing.
  • the positive clamping of the substrate provided by the electrode 223 also enhances plasma stability by improving thermal communication between the substrate and the heater 288 .
  • FIG. 7 schematically illustrates a chart showing coordination between imaginary impedance of an electrostatic chuck and flatness of a substrate positioned on the electrostatic chuck.
  • the x axis of FIG. 7 denotes time.
  • the y axis of FIG. 3 denotes imaginary impedance of an electrostatic chuck in a plasma reactor, wherein the electrostatic chuck functions as an electrode of a capacitive plasma generator of the plasma reactor.
  • the imaginary impedance of the electrostatic chuck may be measured by a VI probe when a RF power is applied to the capacitive plasma generator.
  • the VI probe may measure voltage and current, from which impedance may be calculated using Ohm's Law.
  • Curve 1 of FIG. 7 schematically illustrates an imaginary impedance measurement of the electrostatic chuck when a substrate positioned thereon is flat.
  • the flatness of the substrate is typically altered during processing unless the substrate is a bare silicon wafer or the substrate is sufficiently chucked by the electrostatic chuck.
  • the imaginary impedance of curve 1 has an overall positive slope.
  • Curve 2 of FIG. 7 schematically illustrates an imaginary impedance measurement of the electrostatic chuck when the substrate disposed on the electrostatic is curved and no electrostatic chucking is applied to the substrate.
  • the imaginary impedance of curve 2 has an overall negative slope.
  • Curve 3 of FIG. 7 schematically illustrates an imaginary impedance measurement of the electrostatic chuck when the substrate disposed on the electrostatic is curved. Electrostatic chucking is applied to the substrate until time T. At time T, the substrate is unchucked. The imaginary impedance of curve 3 has a positive slope prior to time T, when the substrate is chucked. Curve 3 has a negative slope when the substrate become unchucked.
  • Curve 4 of FIG. 7 schematically illustrates an imaginary impedance measurement of the electrostatic chuck when the substrate disposed on the electrostatic is curved. No electrostatic chucking is applied to the substrate until time T. At time T, the substrate is chucked. The imaginary impedance of curve 4 has a negative slope prior to time T, when the substrate is not chucked. Curve 4 has a positive slope shortly after the substrate become chucked.
  • flatness of a substrate positioned on an electrostatic chuck during a plasma process may be monitored by calculating a slope of the imaginary impedance of the electrostatic chuck.
  • FIG. 8 schematically illustrates a chart showing coordination between measurements of imaginary impedance of an electrostatic chuck and estimated slopes of the imaginary impedance.
  • imaginary impedance of an electrostatic chuck correlates to flatness of a substrate chucked on the electrostatic chuck during a plasma process.
  • Curves m 1 , m 2 , m 3 of FIG. 8 schematically illustrate sensor measurements of the imaginary impedance of an electrostatic chuck.
  • imaginary impedance may be measured periodically and a slope may be calculated from measurements over a time duration to reduce noise from measurements.
  • slope may be calculated using a Slope Linear Regression.
  • measurements in curves m 1 , m 2 , m 3 may be fitted into straight lines S 1 , S 1 , S 3 .
  • the slope of the straight lines S 1 , S 2 , S 3 generally provides flatness of the substrate disposed on the electrostatic chuck.
  • Line S 1 has a positive slope indicating that the substrate is relatively flat possibly from proper chucking.
  • Line S 2 has a small negative slope indicating the flatness of the substrate is at borderline. An increase in chucking voltage is probably needed to reduce substrate deformation.
  • Line S 3 has a relatively large negative slope indicating the substrate is curved possibly due to insufficient chucking from the electrostatic chuck.
  • slope of imaginary impedance may be obtained using any suitable methods, including other numerical methods and suitable filters.
  • electrostatic chuck described in the present application serves as a grounded electrode for a plasma generator, other circuiting is also applicable. Persons skilled in the art may adjust circuits of filters, impedance matching nextwork, and/or the sensors to measure electric characteristics of the electrostatic chuck.
  • apparatus and method of the present invention may apply to any suitable plasma process.

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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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  • Chemical Vapour Deposition (AREA)
US11/866,646 2006-10-04 2007-10-03 Apparatus and method for substrate clamping in a plasma chamber Abandoned US20080084650A1 (en)

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Application Number Priority Date Filing Date Title
US11/866,646 US20080084650A1 (en) 2006-10-04 2007-10-03 Apparatus and method for substrate clamping in a plasma chamber
CN2007800374811A CN101523357B (zh) 2006-10-04 2007-10-04 等离子腔室中用于基板夹持的设备与方法
PCT/US2007/080491 WO2008043047A2 (fr) 2006-10-04 2007-10-04 Dispositif et procédé pour maintenir un substrat dans une chambre à plasma
KR1020077024574A KR100939594B1 (ko) 2006-10-04 2007-10-04 플라즈마 챔버에서의 기판 클램핑을 위한 장치 및 방법
US12/950,105 US9337072B2 (en) 2006-10-04 2010-11-19 Apparatus and method for substrate clamping in a plasma chamber

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US11/866,646 US20080084650A1 (en) 2006-10-04 2007-10-03 Apparatus and method for substrate clamping in a plasma chamber

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CN108369921A (zh) * 2015-12-07 2018-08-03 应用材料公司 使用静电夹盘夹持及解夹持基板的方法及装置
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US20110090613A1 (en) * 2006-10-04 2011-04-21 Ganesh Balasubramanian Apparatus and method for substrate clamping in a plasma chamber
US9337072B2 (en) 2006-10-04 2016-05-10 Applied Materials, Inc. Apparatus and method for substrate clamping in a plasma chamber
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CN113557597A (zh) * 2019-03-08 2021-10-26 应用材料公司 用于基板处理腔室的吸附工艺和系统
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CN115244214A (zh) * 2020-03-17 2022-10-25 东京毅力科创株式会社 清洁方法和半导体装置的制造方法
US11776835B2 (en) 2020-09-29 2023-10-03 Applied Materials, Inc. Power supply signal conditioning for an electrostatic chuck
TWI843968B (zh) * 2020-09-29 2024-06-01 美商應用材料股份有限公司 具有用於靜電夾盤的功率供應訊號調節的半導體處理系統和功率供應系統及用於調節靜電夾盤的功率供應訊號的方法

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US9337072B2 (en) 2016-05-10
US20110090613A1 (en) 2011-04-21
WO2008043047A3 (fr) 2008-07-31
WO2008043047A2 (fr) 2008-04-10
WO2008043047B1 (fr) 2008-10-02
CN101523357A (zh) 2009-09-02
KR100939594B1 (ko) 2010-02-02
CN101523357B (zh) 2013-01-09

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