US20070240982A1 - Arc ion plating apparatus - Google Patents

Arc ion plating apparatus Download PDF

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Publication number
US20070240982A1
US20070240982A1 US11/532,778 US53277806A US2007240982A1 US 20070240982 A1 US20070240982 A1 US 20070240982A1 US 53277806 A US53277806 A US 53277806A US 2007240982 A1 US2007240982 A1 US 2007240982A1
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US
United States
Prior art keywords
arc
evaporation source
bombardment
arc evaporation
vacuum chamber
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Abandoned
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US11/532,778
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English (en)
Inventor
Hiroshi Tamagaki
Hirofumi Fujii
Tadao Okimoto
Ryoji Miyamoto
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Kobe Steel Ltd
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Kobe Steel Ltd
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Assigned to KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) reassignment KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FUJII, HIROFUMI, MIYAMOTO, RYOJI, OKIMOTO, TADAO, TAMAGAKI, HIROSHI
Publication of US20070240982A1 publication Critical patent/US20070240982A1/en
Priority to US12/953,926 priority Critical patent/US8261693B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

Definitions

  • the present invention relates to an arc ion plating apparatus improved in stability of metal ion bombardment.
  • AIP arc ion plating
  • the AIP apparatus comprises, as shown in FIG. 10 , a vacuum chamber 1 , and a rotary table 2 arranged on the bottom of the vacuum chamber 1 so that the table upper surface is horizontal.
  • the rotary table 2 is rotated by a rotating shaft 3 , and a plurality of planetary shafts 4 protruded from the upper surface of the rotary table 2 also rotate around their own axis by a planetary gear mechanism provided within the rotary table 2 .
  • a substrate holder 5 for holding a substrate is detachably mounted on each planetary shaft 4 .
  • each substrate holder 5 rotates around its own axis while moving horizontally by the rotation of the rotary table 2 , and the substrate such as a tool, a die or a mechanical part held by this substrate holder 5 rotates around its own axis by the rotation of the substrate holder 5 while revolving by the rotation of the rotary table 2 .
  • Negative voltage is applied to the rotary table 2 by a bias power supply (not shown), and this negative voltage is applied, through the substrate holder 5 , to the substrate loaded thereon.
  • An arc evaporation source for deposition group 7 composed of three evaporation sources 7 A arranged in line at substantially fixed intervals in the height direction of the vacuum chamber 1 is provided on the side wall inner surface of the vacuum chamber 1 , and the evaporation sources 7 A are connected to negative electrodes of arc power supplies 8 , respectively, with the positive electrodes thereof being connected to the vacuum chamber 1 .
  • FIG. 10 (B) denoted at 21 is a pumping port for evacuating the vacuum chamber, 22 is a gas supply pipe for supplying a process gas such as nitrogen or oxygen (omitted in FIG. 10 (A)), and 23 is an opening and closing door of the vacuum chamber.
  • a procedure for forming a functional film on the surface of a substrate using the AIP apparatus will be briefly described.
  • the substrate is loaded on the substrate holder 5 and set on the rotary table 2 , the vacuum chamber 1 is evacuated, the substrate is heated by a heater (not shown) provided within the vacuum chamber 1 , and metal ion bombardment (hereinafter often simply referred to as “bombardment”) is then performed to improve the adhesion of the film to be formed.
  • the bombardment is a process for irradiating the substrate applied with a minus voltage of not less than several hundreds V (generally, 600 to 1000V) with metal ions evaporated from the evaporation sources 7 A to etch the surface layer of the substrate by high-energy ion irradiation or to form a mixed layer of irradiation ions and the substrate.
  • V generally, 600 to 1000V
  • a film to be formed by the AIP generally consists of a compound of a metal such as TiN, TiCN, CrN, TiAlN, TiC, or CrON with nitrogen, carbon, oxygen or the like, process gases such as nitrogen, oxygen, and hydrocarbon are introduced into the vacuum chamber 1 singly or in combination thereof during film deposition. For example, introduction of nitrogen with evaporation of Ti results in film deposition of TiN (titanium nitride).
  • the substrate loaded on the substrate holder 5 performs revolution and rotation by rotation of the rotary table 2 in the bombardment and the film deposition, uniform ion irradiation can be performed to the whole substrate.
  • Japanese Patent Laid-Open No. Hei 4-276062 discloses an AIP apparatus comprising an arc evaporation source for deposition and an arc evaporation source for bombardment of the same shape as this, which are provided within a vacuum chamber.
  • high-melting point metal or high-mass metal can be used as the evaporating material for arc evaporation source for bombardment even in use of low-melting point metal (e.g., TiAl alloy) as the evaporating material for arc evaporation source for deposition, the problem that the low-melting point metal disables effective bombardment treatment because of its reduced ionization ratio, and the problem of the deposition of droplets to the substrate surface can be solved.
  • low-melting point metal e.g., TiAl alloy
  • metal ions are generated from an evaporation source in a state where a negative voltage of not less than several hundreds V (in general, about ⁇ 600 to ⁇ 1000V) is applied to the substrate.
  • V in general, about ⁇ 600 to ⁇ 1000V
  • the irradiation quantity of metal ions also inevitably reaches a certain quantity.
  • Stable arc discharge requires an increased energy input quantity to substrate even with a minimum current value and, particularly, in a substrate with small heat capacity such as a drill with small diameter, the substrate temperature is rapidly raised.
  • process conditions must be controlled in a short-time unit, such that the bombardment time is set to a short time to repeat bombardment with cooling interval. Therefore, the controllability is poor, and productivity is consequently reduced.
  • the arc evaporation source two or more evaporation sources of relatively small size with a diameter of about 50 to 180 mm, typically with a diameter of about 100 to 150 mm are frequently used.
  • the bias power supply temporarily stops output in the event of abnormal discharge, an accurate bombardment process cannot be executed if abnormal discharge frequently occurs in course of short-time bombardment.
  • the present invention has an object to provide an AIP apparatus which hardly causes over-temperature rise or abnormal discharge on substrate at the time of bombardment, and thus has satisfactory process controllability.
  • the AIP apparatus comprises a vacuum chamber; a moving member for moving a substrate loaded within the vacuum chamber which is provided within the vacuum chamber and moves the substrate in the direction vertically to the height direction of the vacuum chamber; an arc evaporation source for bombardment provided within the vacuum chamber for irradiating metal ions evaporated by arc discharge with the surface of the substrate to clean the surface, and arc evaporation sources for deposition provided within the vacuum chamber for depositing metal ions evaporated by arc discharge on the surface of the substrate, wherein the arc evaporation source for deposition makes up an arc evaporation source for deposition group composed of a plurality of the arc evaporation sources for deposition arranged in opposition to the substrate installed in the moving member without mutually overlapping in the height direction of the vacuum chamber; the arc evaporation source for bombardment makes up an arc evaporation source for bombardment group composed of at least one arc evaporation source arranged in opposition to the substrate without mutually overlapping in the height direction
  • the metal ion irradiation quantity per unit length in the vertical direction of the arc evaporation source for bombardment can be reduced, compared with the same ion irradiation quantity of the arc evaporation source for deposition. According to this, the heat input quantity to substrate and thus the over-temperature rise or abnormal discharge on substrate can be suppressed at the time of bombardment, resulting in improvement in process controllability.
  • the length in the height direction of the vacuum chamber of the arc evaporation source for bombardment is preferably three times more than the length in the same direction of the arc evaporation source for deposition, or preferably 0.5 to 2.0 m.
  • the metal ion irradiation quantity at the minimum arc current value for stable operation can be reduced to about 1 ⁇ 3 per irradiation area width in the height direction of the vacuum chamber, compared with a case using the arc evaporation source for deposition for bombardment, and the heat input quantity can also be reduced to the same level.
  • the evaporating material (target) becomes difficult to manufacture if the length of the evaporation source exceeds 2 m. Therefore, the length is preferably controlled to not more than 2 m.
  • the arc evaporation source for bombardment preferably includes a target formed of an evaporation material, with an electromagnetic coil formed long in the height direction of the vacuum chamber being attached to the back side of the target.
  • an electromagnetic coil enables scanning of arc spot in a race track shape long in the length direction of the evaporation surface, resulting in uniform supply of metal ions to substrate at the time of bombardment. Further, it enables uniform wear of the evaporation surface of the target from an economical point of view.
  • a drill with small diameter is suitable. According to the AIP apparatus of the present invention, cutting failure that would be caused by softening of cutting edge can be prevented, and satisfactory cutting performance can be ensured.
  • the metal ion irradiation quantity per unit length in the vertical direction of the arc evaporation source for bombardment can be reduced, compared with the same ion irradiation quantity of the arc evaporation source for deposition. Therefore, the heat input quantity to substrate and thus the over-temperature rise or abnormal discharge on substrate can be suppressed at the time of bombardment, resulting in improvement in process controllability.
  • means for solving the problems according to the present invention is to set the evaporation source area of one arc evaporation source for bombardment larger than that of one arc evaporation source for deposition.
  • This structure is capable of reducing the metal ion irradiation quantity per unit area of the substrate by the arc evaporation source for bombardment, compared with that by the arc evaporation source for deposition. Accordingly, the heat input quantity to substrate and thus the over-temperature rise or abnormal discharge on substrate can be suppressed at the time of bombardment in which the minimum current value necessary for stabilization of arc discharge is relatively large.
  • FIGS. 1 (A) and (B) schematically illustrate an AIP apparatus according to a first embodiment of the present invention, wherein (A) is a vertically sectional side view of a vacuum chamber, and (B) is a plan view thereof taken from arrowed direction A of (A);
  • FIGS. 2 (A) and (B) schematically illustrate an AIP apparatus according to a second embodiment of the present invention, wherein (A) is a vertically sectional side view of a vacuum chamber, and (B) is a plan view thereof taken from arrowed direction A of (A);
  • FIGS. 3 (A) and (B) schematically illustrate an AIP apparatus according to a third embodiment of the present invention, wherein (A) is a vertically sectional side view of a vacuum chamber, and (B) is a plan view thereof taken from arrowed direction A of (A);
  • FIGS. 4 (A) and (B) schematically illustrate an AIP apparatus according to a fourth embodiment of the present invention, wherein (A) is a vertically sectional side view of a vacuum chamber, and (B) is a plan view thereof taken from arrowed direction A of (A);
  • FIG. 5 schematically illustrates an AIP apparatus according to a fifth embodiment of the present invention, and is a vertically sectional side view of a vacuum chamber;
  • FIG. 6 is a perspective view of an arc evaporation source for bombardment having a rectangular shape in plan view
  • FIG. 7 is a perspective view of an arc evaporation source for bombardment having a race track shape in plan view
  • FIGS. 8 (A) and (B) illustrate an arc evaporation source for bombardment provided with an electromagnetic coil, wherein (A) is a front view of the arc evaporation source for bombardment and (B) is a sectional view thereof taken along line A-A of (A);
  • FIGS. 9 (A) and (B) illustrate an arc evaporation source for bombardment provided with an electromagnetic coil and a cylindrical target, wherein (A) is a front view of the arc evaporation source for bombardment and (B) is a sectional view thereof taken along line A-A of (A); and
  • FIGS. 10 (A) and (B) schematically illustrate a conventional AIP apparatus, wherein (A) is a vertically sectional side view of a vacuum chamber, and (B) is a plan view thereof taken from arrowed direction A of (A).
  • FIGS. 1 (A) and (B) illustrate an AIP apparatus according to a first embodiment, and the same reference numbers are assigned to the same members as in the conventional AIP apparatus shown in FIGS. 10 (A) and (B).
  • This AIP apparatus comprises a vacuum chamber 1 , and a rotary table 2 (corresponding to the “moving member” of the present invention) is provided on the bottom of the vacuum chamber 1 so that the table upper surface is horizontal.
  • the rotary table 2 is adapted so that it is rotated by a rotating shaft 3 whose central axis is arranged along the height direction (which may be called “longitudinal direction”) of the vacuum chamber 1 , and planetary shafts 4 protruded from the upper surface of the rotary table 2 rotate around their own axis by a planetary gear mechanism provided within the rotary table 2 .
  • a substrate holder 5 for holding a substrate is detachably mounted on each of the planetary shafts 4 .
  • each substrate holder 5 horizontally moves in a vertical direction relative to the longitudinal direction (which may be called “lateral direction”) by rotation of the rotary table 2 , and also rotates around its own axis, and the substrate held by the substrate holder 5 while revolving by the rotation of the rotary table 2 .
  • Negative voltage is applied to the rotary table 2 by a bias power supply (not shown), and this negative voltage is then applied through the substrate holder 5 to a substrate loaded thereon.
  • the rotary table 2 can be provided with no planetary gear mechanism so as not to rotate the substrate holders, or can be adapted to directly set the substrate on the rotary table without using the substrate holder.
  • a plurality (three in the figure) of evaporation sources 7 A are arranged, as an arc evaporation source for deposition group 7 , on the side wall inner surface of the vacuum chamber 1 substantially at fixed intervals in the height direction of the vacuum chamber 1 .
  • one evaporation source 9 A having a rectangular shape in plan view is arranged, as an arc evaporation source for bombardment group 9 , on the side wall inner surface opposite to the arc evaporation source for deposition group 7 .
  • the evaporation sources 7 A and 9 A are connected, respectively, to negative electrodes of arc voltages 8 and 10 , with the positive electrodes thereof being connected to the vacuum chamber 1 .
  • anode electrode members may be provided in the vicinity of the evaporation sources 7 A and 9 A to connect the positive electrodes of the arc power supplies thereto.
  • the evaporation sources 7 A of the arc evaporation source for deposition group 7 those typically having a circular evaporation surface, with a diameter ranging from about ⁇ 50 to 180 mm, typically ranging from ⁇ 100 to 150 mm, are frequently used. Considering that metal ion vapor evaporated from the evaporation sources slightly spreads, the evaporation sources 7 A are arranged at intervals of about 1.5 to 2.5 times the evaporation surface area diameter.
  • Vacuum arc discharge is generated in the evaporation sources 7 A with an arc current generally of 50 to 300 A, more generally, of about 80 to 150 A and an arc voltage of about 15 to 40V to evaporate targets (evaporating materials) attached to the evaporation sources 7 A, so that metal ions are irradiated and deposited on the substrates.
  • the evaporation source 9 A used as the arc evaporation source for bombardment group 9 has a rectangular shape in plan view with the long sides being longitudinally arranged and the short sides being laterally arranged, as shown in FIG. 6 , and the evaporation surface of a target T that is an evaporating material also has a rectangular shape in plan view.
  • the evaporation source 9 A is adapted so that bombardment metal ions are supplied by one evaporation source 9 A in a longitudinal metal ion irradiation area which can be treated by a plurality of evaporation sources 7 A of the arc evaporation source for deposition group 7 .
  • the evaporation source 9 A is arranged in opposition to the substrate within the vacuum chamber 1 , and the upper and lower ends of its long side are located in positions corresponding to the upper end of the top evaporation source 7 A of the arc evaporation source for deposition 7 and the lower end of the bottom evaporation source 7 A, respectively.
  • the lateral (short side) length of the evaporation source 9 A is substantially the same as the diameter of the evaporation source 7 A.
  • An arc current area for operating the arc evaporation source for bombardment 9 A is set to a range equal to that of each evaporation source 7 A of the arc evaporation source for deposition group 7 . According to this, the metal ion quantity per unit area to be irradiated to substrate can be reduced to about 1 ⁇ 3 and the heat input per unit time and per unit area to substrate surface in bombardment can be thus suppressed to about 1 ⁇ 3.
  • the arc discharge current in bombardment is preferably set so that one arc spot is mainly generated on the target surface for the purpose of ensuring the uniformity of bombardment, and preferably held in general at not more than 150 A, more preferably at not more than 120 A.
  • the arc current is preferably set to not less than 80 A, at which arc discharge is stabilized.
  • the AIP apparatus of this embodiment is used in the same manner as in the past, except executing the bombardment by use of the arc evaporation source for bombardment group 9 .
  • the substrate holder 5 loaded with the substrate is set on the rotary table 2 , the vacuum chamber 1 is evacuated, the substrate is heated by a heater provided within the vacuum chamber 1 , bombardment is performed by use of the arc evaporation source for bombardment group 9 , and a functional film is formed on the substrate surface by use of the arc evaporation source for deposition group 7 .
  • the arc evaporation source for bombardment 9 A formed so that its longitudinal length is larger than that of the arc evaporation source for deposition is used in the AIP apparatus of this embodiment, a sudden rise of substrate temperature at the time of bombardment can be suppressed and, overheating or the like, particularly, in a substrate with small heat capacity, which was problematic in the past, can be solved. Since the bombardment treatment can be performed by use of one evaporation source 9 A, the capacity of the bias power supply can be minimized. Further, the frequency of abnormal discharge is reduced by the reduction in ion density in the vicinity of the substrate. And since the bombardment time necessary for obtaining the same bombardment effect is extended several times, the time of condition setting can be extended to improve the controllability, and the influence of interruption period of bias voltage in abnormal discharge can be relatively reduced.
  • the longitudinal metal ion irradiation area width to be treated by one arc evaporation source for bombardment is set to not less than 400 mm and, more preferably, to not less than 500 mm.
  • the arc current value for film deposition in an evaporation source with ⁇ 100 mm is 100 to 200 A, typically 150 A.
  • three evaporation sources are operated with a bias voltage of 300V and an arc current of 150 A to irradiate metal ions in a longitudinal irradiation area width of 500 mm.
  • the evaporation sources are operated with an arc current of 80 to 120 A, typically 100 A, considering the lower limit of arc current, to apply a bias voltage of ⁇ 600 to ⁇ 1000V to the substrate.
  • an arc current of 100 A and a bias voltage of 1000V are typical conditions in metal bombardment.
  • an irradiation area width for bombardment where this value in bombardment is equal to the maximum value in film deposition (150 A ⁇ 3 ⁇ 300V/500 mm) can be determined as 370 mm by calculation. Namely, extension of the treatment area width in bombardment to this irradiation area width or more leads to reduction in the risk of overheating, and this is matched with the above-mentioned experimental knowledge although it is based on rough examinations.
  • the longitudinal length (long side) of the arc evaporation source for bombardment 9 A is suitably set to not less than 500 mm, more preferably to not less than 600 mm.
  • the length of evaporation source must be within a manufacturable range of target, it is appropriate to set the maximum length of evaporation source to about 2 m or less.
  • the irradiation area width for arc evaporation source for bombardment group is preferably set to about 1.2 m or less. If an irradiation area width larger than this is needed, a plurality of arc evaporation sources for bombardment can be juxtaposed in the longitudinal direction and used as the arc evaporation source for bombardment group.
  • FIG. 2 An AIP apparatus according to a second embodiment of the present invention will be briefly described with reference to FIG. 2 .
  • the same reference numbers are assigned to the same members as in the AIP apparatus of the first embodiment.
  • two lines of evaporation source groups each composed of three vertically juxtaposed evaporation sources 7 A are provided at a distance of 90° in the circumferential direction of the vacuum chamber.
  • the film deposition is performed by use of the two lines of evaporation source groups, a two-fold film deposition rate can be realized, compared with the apparatus of the first embodiment.
  • the bombardment is performed by use of one rectangular evaporation source 9 A similarly to the first embodiment, problems such as overheating are not caused in the bombardment process.
  • Targets of different materials are attached to evaporation sources 7 A of each line of the arc evaporation source for deposition group 7 , whereby deposition of a multilayer film composed of two kinds of films can be performed.
  • the evaporation sources 7 A of the arc evaporation source for deposition group 7 are longitudinally lined up in the AIP apparatuses according to the first and second embodiments, the evaporation sources 7 A are not necessarily lined up, they may be arranged in the circumferential direction of the vacuum chamber 1 , as in this AIP apparatus, while shifting the longitudinal positions stepwise. Even with such an arrangement of the arc evaporation source for deposition group 7 , also, uniform coating of substrate surface can be realized by the rotation of the rotary table 2 and the rotation of the substrate holder 5 within the vacuum chamber 1 .
  • This AIP apparatus comprises two lines of evaporation source groups each composed of three longitudinal stages of evaporation sources 7 A, which are provided in the circumferential direction of the chamber as the arc evaporation source for deposition similarly to the AIP apparatus of the third embodiment, but the evaporation sources 7 A of each line are arranged while shifting the longitudinal positions by 1 ⁇ 2 of the mounting space of the evaporation sources 7 A. According to this, coating with further high uniformity can be attained.
  • An AIP apparatus according to a fifth embodiment of the present invention will be briefly described with reference to FIG. 5 .
  • This AIP apparatus is the same as the AIP apparatus of the first embodiment for the circumferential arrangement of the arc evaporation source for deposition group 7 and the arc evaporation source for bombardment group 9 .
  • the arc evaporation source for deposition group 7 is composed of six evaporation sources 7 A
  • the arc evaporation source for bombardment group 9 is composed of two evaporation sources 9 A. According to this structure, high-volume treatment can be performed, and the thermal load to substrate in course of bombardment can be reduced to 1 ⁇ 3 of conventional cases.
  • metals including various alloys can be used in the first to the fifth embodiments and, for example, Ti or Cr can be suitably used as the material.
  • the rectangular evaporation source (the first embodiment evaporation source) shown in FIG. 6 is used as the evaporation source 9 A of the arc evaporation source for bombardment group 9 .
  • the arc evaporation source for bombardment in the present invention is not limited to this and, for example, an evaporation source 9 B having a race track-like outer shape in plan view and comprising a target T with a race track-like evaporation surface in plan view as shown in FIG. 7 can be used.
  • the evaporation source 9 B is also arranged so that its length (long axis) is laid along the longitudinal direction. Further, as shown in FIGS.
  • an arc evaporation source for bombardment 9 C in which a race track-shaped electromagnetic coil is arranged on the back side of the target T can be adapted.
  • a race track-shaped electromagnetic coil By generating a magnetic field by this coil C, an arc spot generated on the evaporation surface can be guided in a race track shape on the evaporation surface of the target. According to this, the vapor to be irradiated from the arc evaporation source for bombardment to the substrate can be further uniformed.
  • an arc evaporation source for bombardment 9 D comprising a cylindrically formed target T, both ends thereof being closed by arc closing members 12 , and a race track-shaped electromagnetic coil C arranged on the inside of the cylindrical target T as shown in FIG. 9 (B) can be adapted.
  • a race track-shaped magnetic field is generated by the electromagnetic coil C, whereby the arc spot can be scanned in a race track shape to uniformly irradiate the vapor to the substrate.
  • a permanent magnet which forms a magnetic field of a corresponding shape may be arranged on the target surface instead of the electromagnetic coil.
  • a solid round bar-like target can be arranged in the longitudinal direction and used.
  • the arc evaporation source for bombardment has a form in which the longitudinal length (in the height direction of the vacuum chamber) is larger than the lateral length. This reason is that since the vacuum chamber has a round shape in top view from the view of pressure resisting structure, the evaporation surface must be curved if the evaporation source is laterally extended, and this is not realistic. From this point, a longitudinally extended shape is practical for the increase in evaporation surface area of the arc evaporation source for bombardment.
  • the present invention is not limited to the arc evaporation sources for bombardment or arc evaporation sources for deposition as described in each embodiment.
  • An arc ion plating apparatus comprising a moving member, an arc evaporation source for bombardment and an arc evaporation source for deposition arranged so that irradiation of metal ions to substrate can be effectively performed, in which the arc evaporation source for bombardment is formed so that the evaporation surface area is larger than that of an arc evaporation source for deposition with the largest evaporation surface area of a plurality of arc evaporation sources for deposition, is included in the scope of the present invention.
  • the number of arc evaporation sources for deposition is necessarily larger than the number of arc evaporation sources for bombardment. Since the destinations of metal ion irradiation in the bombardment and in the film deposition are the same substrate, the number of evaporation sources must be increased in the film deposition where the irradiation area sharable by one evaporation source is small.
  • the present invention mainly aims at providing a structure capable of reducing the metal ion irradiation quantity per unit area by arc evaporation source for bombardment, relative to the minimum current value necessary for stabilization of arc discharge, compared with the metal ion irradiation quantity per unit by arc evaporation source for deposition by setting the evaporation source area of one arc evaporation source for bombardment larger than that of one arc evaporation source for deposition.
  • Film deposition examples to substrate using the AIP apparatus of the first embodiment will be concretely described.
  • the present invention should not be definitely interpreted by these film deposition examples.
  • Three evaporation sources 7 A having an evaporation surface 100 mm in diameter were longitudinally arranged in line as the arc evaporation source for deposition group 7 .
  • One evaporation source 9 A was used as the arc evaporation source for bombardment group 9 .
  • the arc evaporation source for bombardment 9 A which has a rectangular shape with a long side of 600 mm and a short side of 100 mm was arranged on the side wall inner surface of the vacuum chamber 1 so that the long side was laid along the longitudinal direction, whereby a longitudinal metal ion irradiation area width opposed to the substrate holder 5 is formed in 500 mm.
  • a high-speed steel-made test piece (dimension: 12 mm ⁇ 12 mm ⁇ 5 mm) and a high-speed steel-made drill 3 mm in diameter were loaded on the holder mounted on each planetary shaft 4 of the rotary table 2 .
  • a target of Ti was attached to each evaporation source 7 A, 9 A.
  • the number of revolution of the rotary table 2 in bombardment and film deposition was set to 2 rpm.
  • the vacuum chamber was evacuated, and the substrate is heated to a substrate temperature of 400° C. by a radiant heater equipped in the vacuum chamber.
  • Each evaporation source of the arc evaporation source for deposition group was operated at an arc current of 100 A, and metal bombardment treatment was executed for 5 minutes at a bias voltage of ⁇ 1000V.
  • each evaporation source of the arc evaporation source for deposition group was operated at an arc current of 150 A, a TiN film of about 3 ⁇ m was formed at a bias voltage of ⁇ 50V while introducing nitrogen gas at a pressure of 3.9 Pa followed by cooling for 30 minutes, and the treated substrate was taken out.
  • the arc evaporation source for bombardment was operated at an arc current of 150 A, a TiN film of about 3 ⁇ m was formed at a bias voltage of ⁇ 50V while introducing nitrogen gas at a pressure of 3.9 Pa followed by cooling for 30 minutes, and the resulting substrate was taken out.
  • bombardment treatment using the arc evaporation source for bombardment and film deposition treatment using the arc evaporation source for deposition group were performed in the following manner.
  • each evaporation source of the arc evaporation source for deposition group was operated at an arc current of 150 A, TiN film of about 3 ⁇ m was formed at a bias voltage of ⁇ 50V while introducing nitrogen gas at a pressure of 3.9 Pa followed by cooling for 30 minutes, and the resulting substrate was taken out.
  • the time required for film deposition of 3 ⁇ m-TiN film was 90 minutes, and the total cycle time from the vacuuming start to the taking-out was 3 hours and 25 minutes.
  • the bias current is obviously reduced in Inventive Example, and the bombardment treatment could be thus performed by use of a bias power supply of further small capacity.
  • the noticeable point is the abnormal discharge which is sensed by the bias power supply.
  • abnormal discharge occurred over 3 minutes in the former stage of the bombardment treatment, and it was only for the final two minutes that application of voltage could be performed without abnormal discharge.
  • the bias power supply interrupts output upon detecting abnormal discharge, and restarts voltage applications after resting, a state where normal bias voltage is not applied is established during generation of abnormal discharge.
  • the time of applying the normal voltage is relatively extended since the duration of bombardment was about three times in addition to the tendency of reducing the frequency of abnormal discharge, and the reproducibility of the film deposition process was further enhanced.
US11/532,778 2005-10-17 2006-09-18 Arc ion plating apparatus Abandoned US20070240982A1 (en)

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US20090145752A1 (en) * 2007-12-06 2009-06-11 Intevac, Inc. System and method for dual-sided sputter etch of substrates
US20100213054A1 (en) * 2009-02-24 2010-08-26 Industrial Technology Research Institute Vacuum coating apparatus with mutiple anodes and film coating method using the same
US20150136029A1 (en) * 2013-11-18 2015-05-21 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Film deposition system
US20160002769A1 (en) * 2013-03-19 2016-01-07 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Pvd processing apparatus and pvd processing method
US20160068946A1 (en) * 2013-05-27 2016-03-10 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Deposition device and deposition method using same
CN109055901A (zh) * 2018-10-25 2018-12-21 大连维钛克科技股份有限公司 一种提高硬质涂层与基材结合力的装置及工艺
US10907246B2 (en) 2016-12-07 2021-02-02 Kobe Steel, Ltd. Film-forming apparatus, method for producing film-formed product using same, and cooling panel
CN112481596A (zh) * 2020-11-27 2021-03-12 厦门大学 一种工件旋转装置和离子束物理气相沉积装置
US11225711B2 (en) 2017-02-09 2022-01-18 Kobe Steel, Ltd. Coating device and method for manufacturing coated article
US20230304140A1 (en) * 2020-11-06 2023-09-28 Takashi Iizuka Film-forming device, film-forming unit, and film-forming method

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KR20150065883A (ko) * 2012-11-14 2015-06-15 가부시키가이샤 고베 세이코쇼 성막 장치
JP6076112B2 (ja) * 2013-02-07 2017-02-08 株式会社神戸製鋼所 イオンボンバードメント装置及びこの装置を用いた基材の表面のクリーニング方法
JP2015063721A (ja) * 2013-09-24 2015-04-09 日本アイ・ティ・エフ株式会社 真空アーク蒸着法、真空アーク蒸着装置および真空アーク蒸着法を用いて製造された薄膜ならびに物品
JP6044602B2 (ja) 2014-07-11 2016-12-14 トヨタ自動車株式会社 成膜装置
JP6380483B2 (ja) 2016-08-10 2018-08-29 トヨタ自動車株式会社 成膜装置
CN108220890B (zh) * 2016-12-15 2020-02-14 中国航空工业集团公司济南特种结构研究所 一种复材表面电弧离子镀膜方法

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Publication number Priority date Publication date Assignee Title
US20090145752A1 (en) * 2007-12-06 2009-06-11 Intevac, Inc. System and method for dual-sided sputter etch of substrates
US9165587B2 (en) * 2007-12-06 2015-10-20 Intevac, Inc. System and method for dual-sided sputter etch of substrates
US20100213054A1 (en) * 2009-02-24 2010-08-26 Industrial Technology Research Institute Vacuum coating apparatus with mutiple anodes and film coating method using the same
US8663441B2 (en) * 2009-02-24 2014-03-04 Industrial Technology Research Institute Vacuum coating apparatus with mutiple anodes and film coating method using the same
US20160002769A1 (en) * 2013-03-19 2016-01-07 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Pvd processing apparatus and pvd processing method
US10538842B2 (en) * 2013-05-27 2020-01-21 Kobe Steel, Ltd. Deposition device having cooler with lifting mechanism
US20160068946A1 (en) * 2013-05-27 2016-03-10 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Deposition device and deposition method using same
US20150136029A1 (en) * 2013-11-18 2015-05-21 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Film deposition system
US10907246B2 (en) 2016-12-07 2021-02-02 Kobe Steel, Ltd. Film-forming apparatus, method for producing film-formed product using same, and cooling panel
US11225711B2 (en) 2017-02-09 2022-01-18 Kobe Steel, Ltd. Coating device and method for manufacturing coated article
CN109055901A (zh) * 2018-10-25 2018-12-21 大连维钛克科技股份有限公司 一种提高硬质涂层与基材结合力的装置及工艺
US20230304140A1 (en) * 2020-11-06 2023-09-28 Takashi Iizuka Film-forming device, film-forming unit, and film-forming method
CN112481596A (zh) * 2020-11-27 2021-03-12 厦门大学 一种工件旋转装置和离子束物理气相沉积装置

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PT1775352E (pt) 2013-05-10
US20110067631A1 (en) 2011-03-24
CN1952205A (zh) 2007-04-25
CN1952205B (zh) 2010-06-02
KR100800223B1 (ko) 2008-02-01
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US8261693B2 (en) 2012-09-11
EP1775352A2 (en) 2007-04-18

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