US20060164649A1 - Multi-spectral techniques for defocus detection - Google Patents
Multi-spectral techniques for defocus detection Download PDFInfo
- Publication number
- US20060164649A1 US20060164649A1 US11/227,720 US22772005A US2006164649A1 US 20060164649 A1 US20060164649 A1 US 20060164649A1 US 22772005 A US22772005 A US 22772005A US 2006164649 A1 US2006164649 A1 US 2006164649A1
- Authority
- US
- United States
- Prior art keywords
- sample surface
- light
- intensity image
- sample
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 76
- 238000001514 detection method Methods 0.000 title claims abstract description 23
- 230000007547 defect Effects 0.000 claims abstract description 29
- 235000012431 wafers Nutrition 0.000 claims abstract description 28
- 238000004458 analytical method Methods 0.000 claims abstract description 11
- 238000003384 imaging method Methods 0.000 claims description 37
- 238000001228 spectrum Methods 0.000 claims description 20
- 238000007405 data analysis Methods 0.000 claims description 11
- 230000001427 coherent effect Effects 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 230000007480 spreading Effects 0.000 claims description 6
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 5
- 238000000711 polarimetry Methods 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 238000000701 chemical imaging Methods 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 description 14
- 230000003595 spectral effect Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 238000007689 inspection Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000010287 polarization Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000003252 repetitive effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229920006353 Acrylite® Polymers 0.000 description 1
- 230000005457 Black-body radiation Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000546 chi-square test Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000009615 fourier-transform spectroscopy Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/45—Interferometric spectrometry
- G01J3/453—Interferometric spectrometry by correlation of the amplitudes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0224—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using polarising or depolarising elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
- G01N2021/213—Spectrometric ellipsometry
Definitions
- This invention relates to integrated circuit processing, and in particular to detection of focus errors caused by the lithography stepper/scanner.
- DOF Depth of Focus
- Steppers are generally equipped with autofocus, which tries to find the best focus for each field of the stepper (usually one die or several dies).
- autofocus usually one die or several dies.
- several factors can cause local or global focus problems:
- ADI Lithographic After-Development Inspection
- scanner/stepper defocus has been detected using manual inspection.
- Automated macro-inspection systems have also been used to detect defocus, along with other defects, using machine vision, i.e., imaging techniques.
- Such systems as the Nikon macro-inspection system uses a spin-wobble mount similar to that used in manual inspection, whereby the wafers are tilted and rotated around the azimuth.
- a high-resolution CCD camera images them through telecentric optics, and image processing is used to detect intensity variations in the observed image.
- the 2401 and 2430 inspection systems made by KLA-Tencor use narrow-spectral-band and broad-spectral band illumination, use monochrome sensors and detect defocus as an intensity change, and use a line-scan mechanism for imaging.
- FIG. 1 a illustrates an embodiment of the invention which employs a filter wheel comprising multiple optical narrow-band filters.
- FIG. 1 b illustrates an embodiment of the invention which employs a Liquid-crystal Fabry-Perot Etalon interferometer.
- FIG. 1 c illustrates an embodiment of the invention which employs a Sagnac interferometer.
- FIG. 2 illustrates an embodiment of the invention which employs a spectroscopic ellipsometer.
- FIG. 3 illustrates an embodiment of the invention which utilizes Fourier Optics to detect extended defocus defects.
- FIG. 4 illustrates an embodiment of the invention which combines hyperspectral analysis with Fourier imaging.
- defocus is detected by accumulating information about the detected scattered and diffracted light in an image of a region of interest of a wafer, collected for several different discrete wavelengths or for a wavelength spectrum.
- the information collected is both spatial (i.e., image), and wavelength spectral.
- This technique when employed with high spectral finesse, is often referred to as “hyperspectral imaging”.
- a conventional monochromatic image is a function of the two spatial dimensions, I(x,y), where I is the intensity of the scattered and diffracted light from each point (x,y).
- I is the intensity of the scattered and diffracted light from each point (x,y).
- additional information is collected by varying wavelength ⁇ , to yield an intensity image I(x,y, ⁇ ).
- the spectral information is typically not collected continuously, but rather at a number of discrete wavelengths.
- the spectral information can be derived in several ways:
- a first sub-embodiment utilizes a series of filters selecting particular narrow wavelength bands from a broadband source, either during illumination or detection.
- FIG. 1 a illustrates one implementation of the first sub-embodiment which employs fixed absorption filters.
- Filter wheel 115 comprising multiple optical narrow-band filters is inserted between imaging lens 120 and camera 110 .
- Relay 125 is between filter wheel 115 and camera 110 .
- Wafer 100 on wafer holder 102 is illuminated by illuminator 105 which provides broadband light 109 , such as a halogen incandescent bulb or other light source with black-body radiation characteristics.
- Mirror 108 may be used to collimate the light incident on the wafer.
- Camera 110 images the wafer using reflected, diffracted, or scattered light from the wafer surface.
- Computer 128 is optionally used for data analysis and control of parameters.
- An alternative implementation employs fixed interference filters in place of fixed absorption filters.
- FIG. 1 b illustrates a second implementation wherein Liquid-crystal Fabry-Perot Etalon interferometer 130 replaces filter wheel 115 .
- Variable voltage supply 135 applies an adjustable electric field to the liquid crystals to modify their refractive index, whereby a continuously adjustable bandpass filter is implemented.
- An alternative implementation utilizes a birefringent Lyot filter in place of Fabry-Perot Etalon to provide continuously adjustable wavelength. Lyot filters are described in U.S. Pat. No. 5,809,048, issued Sep. 15, 1998.
- a second sub-embodiment directly provides a series of different illumination wavelengths by illuminating with a collection of LED's of different wavelengths, rather than filtering broadband illumination.
- Dispersive Element e.g., a Prism or a Diffraction Grating
- Angularly Separate Outgoing Light of Different Wavelengths e.g., a Prism or a Diffraction Grating
- the spectral information can be obtained using a point-measuring system such as the Spectra CD system manufactured by KLA-Tencor, and spatial information would then need to be obtained using a scanning image-building method. Details of the Spectra CD system, including data analysis and signature matching to a database are described in U.S. Pat. No. 6,483,580, issued Nov. 19, 2002, which is hereby incorporated by reference. Alternately, imaging spectrometers such as the ST Mapper system manufactured by Filmetrics can be used to provide both the spatial and spectral information.
- interferometer Use of an interferometer to either select the wavelengths for observation, or to spread the wavelengths in one dimension only. This method is generally referred to as Fourier Transform Spectroscopy, since the interference signal from the interferometer yields the Fourier Transform of the spectral intensity curve.
- the use of interferometers to form spectral images of a sample is described in U.S. Pat. No. 5,835,214, issued Nov. 10, 1998, the specification of which is hereby incorporated by reference.
- Many types of interferometers may by utilized, such as Fabry-Perot or Michaelson for wavelength selection, or Sagnac or generic “whiskbroom” or “pushbroom” interferometers for single dimension wavelength spreading.
- Use of a Sagnac interferometer is desirable for the present application due to its robustness and insensitivity to motion.
- FIG. 1 c illustrates the implementation of a Fourier Transform spectrometer utilizing a Sagnac interferometer.
- Broadband illumination from illuminator 105 is incident (shown here as reflected by mirror 138 to provide normal incidence, though oblique incidence is also possible) on sample 100 mounted on xy stage 102 .
- Image formation occurs by scanning the stage in one dimension.
- Outgoing light passes through lens 140 and aperture 145 into Sagnac interferometer 175 .
- Beam splitter 150 sends light in two opposing directions to mirrors 155 , then through Fourier transform lens 160 , cylindrical lens 165 , and to 2-D sensor array 170 .
- Mirrors 155 are slightly tilted with respect to one another, making the two path lengths slightly different.
- Fourier transform lens 160 moves the infinity plane to a closer location, and cylindrical lens 165 undoes the Fourier transform in one dimension but preserves it in the other dimension.
- Data analysis for spatial and spectral image formation are performed by computer 128 .
- Spectroreflectometry can be further enhanced by collecting ellipsometric information I(x,y, ⁇ , P,P′), where P is the polarization of the illuminating light, and P′ is the polarization of the reflected light.
- I(x,y, ⁇ , P,P′) is the polarization of the illuminating light
- P′ is the polarization of the reflected light.
- An example of a system which might be used for this purpose is the KLA-Tencor Archer spectroscopic ellipsometer.
- This method provides enhanced sensitivity to long features, particularly conducting features such as metal lines. Illumination for polarimetry is incident at an oblique angle, which will have a preferential direction related to long lines. Also, long conducting lines on the sample can act as a “polarization grating”, and can short out electromagnetic radiation with electric field parallel to the conducting lines, even at normal incidence. Finally, oblique incidence illumination can also better isolate the top sample layer, since the surface is more reflective and mirror-like. In this embodiment, polarized light is incident upon the sample. Reflected light from the sample is analyzed to determine the effect the sample has had on the polarization of the light.
- FIG. 2 illustrates a configuration whereby polarimetric information can be gathered in a point measurement spectroreflectometer.
- Oblique incidence light from illuminator 210 passes through polarizer 215 to impinge on sample 200 , which is mounted on xy stage 205 .
- Outgoing light passes through analyzer 220 into spectrometer 225 .
- Light from illuminator 230 passes through beamsplitter 235 and lens 240 to impinge at normal incidence onto sample 200 . Reflected light is detected by spectroscopic reflectometer 245 .
- Computer 250 performs data analysis, controls the travel of the xy stage to provide a scan and thereby build an image, and further controls other system parameters.
- polarimetric information can enhance defocus detection, since without polarimetry, there may not be enough data available to distinguish between defocus and other process or material problems. Adding the extra parameter from polarimetry may provide sufficient data. However, the additional data necessitates more complicated mathematics and data analysis.
- Defocus may be detected by comparing the diffraction spectra and images of equivalent regions on different die, or by comparing the “defocus signature” of the area of interest with that of focus-exposure matrix wafers, which are commonly used for process monitoring.
- the comparison is a functional comparison, as opposed to a single value comparison, and can be accomplished in various ways, for example by using a ⁇ 2 test or similar functional comparison techniques such as comparison of spectrum statistics.
- the expected minimum number of different wavelength bands used for measurements is in the range of about 5 to 16 in order to detect a defocus signature, but may require larger numbers depending on the details of the pattern.
- the exact wavelengths and number of spectral bands can be determined at recipe setup time if focus-exposure matrices are used.
- a library or reference database of spectra from actual sample patterns may be built for comparison with in-use sample spectra, or alternatively a numerically simulated library of spectra may be built.
- Data analysis, and computation of and comparison with library spectra, are generally performed by a computer which also may perform control functions such as wavelength variation.
- Data analysis for spectroscopic ellipsometry and spectroscopic scatterometry are described in previously incorporated U.S. Pat. No. 6,483,580.
- Fourier Space analysis In another embodiment of the invention, increased sensitivity to extended defocus defects is achieved using the principles of Fourier optics.
- the technique will be referred to hereinafter as “Fourier Space analysis”.
- Prior imaging techniques as described above are sub-optimal, because spatial information is kept in the image, thereby making localization of the extended defects less exact. Defocus effects tend to be diffuse, so spatial pixel-by-pixel analysis is not optimally effective.
- a basic principle of Fourier optics is that effects which are localized in physical space are diffuse in the Fourier domain, and that effects which are diffuse in physical space are localized in the Fourier domain. This phenomenon leads to the observation that transferring into Fourier space can enhance the detection and location of a diffuse effect such as diffuse defocus.
- the second embodiment of the present invention provides an optical Fourier transform, i.e., a Fourier Transform of the spatial image, to achieve the transference.
- repetitive patterns which cover large areas on the object give rise to intense, angularly concentrated “pencils” of light; conversely, small, isolated objects in the spatial domain spread their energy angularly in a large number of directions, without forming any such pencils. Therefore, spatially diffuse effects such as field defocus result in high contrast pencils of light beams.
- Repetitive small changes, such as resist profile changes, caused by defocus can be seen in Fourier space as a significant change in the Fourier pattern.
- the far-field pattern can form relatively close to the object, e.g., several inches away from it, depending on the scale of the patterns on the object. Further propagation to “infinity” results in a better separation of the pencils of beams.
- the present invention provides for the illumination of the wafer with coherent monochromatic illumination from a laser to cause the appearance of the Fourier transform at infinity, and further provides for the optional insertion of refractive or reflective optical components to move the far field pattern from infinity to a controlled finite position.
- FIG. 3 illustrates this embodiment of the invention.
- Wafer 300 is mounted on x-y stage 310 . Since the Fourier pattern is insensitive to positioning, the stage accuracy need not be very high.
- Laser 320 outputs laser beam 330 which is expanded by beam expander 340 and impinges on wafer 300 at an angle which is shown to be non-normal but may be modified to be normal incidence.
- Aperture or apertures 350 localize the beam to coincide with the sample field's boundary on the wafer.
- the far-field pattern is seen on screen 360 (which may be curved or hemispherical as shown, or may be flat) made of diffusing material such as Acrylite DF.
- a conventional camera 370 and lens 380 image the screen and digitize the data.
- the camera used should have excellent dynamic range, which may be achieved by performing multiple exposures with progressively longer exposure times. This method will cause bright areas to saturate upon longer exposure, but dim areas will become more intense. This effectively increases the dynamic range of the camera, but requires good anti-blooming measures.
- Computer 390 is used for data analysis, as well as optionally for control of the process parameters.
- optical components can be used in place of or in addition to the screen.
- a large diameter lens could be used to directly capture the outgoing pencils of light and relay them to an image plane.
- Such lenses being of large diameter, are expensive to manufacture, but a low-quality plastic lens may suffice and is much less costly than a high-quality lens.
- a second alternative is to use a large-size replicated mirror to relay the outgoing light to an image plane. Such mirrors are low-cost, but have long focal lengths, making the system large in size. Optical folding may mitigate this problem.
- Each sample field generates one image, which contains a signature of the field.
- Extended defects are detected by comparing the images to other similar images.
- the image may be mostly dark, with the defect-relevant information being contained in a relatively small portion of the image.
- Computer-implemented data analysis is utilized to extract defocus information from the Fourier Space analysis described above.
- the details of the algorithms used to flag large-scale defects depend on the structures being imaged. To a first approximation, a simple subtraction of the patterns followed by a thresholding step may be sufficient.
- spatial filtering can be done by ignoring certain areas of the acquired image.
- a library of Fourier signatures can be collected using standard focus-exposure matrix wafers, which are commonly used for process monitoring.
- This embodiment of the invention provides increased (relative to pixel-based imaging schemes) sensitivity to extended, i.e., large-area defects such as defocus, since it uses the complete Fourier spectrum, and because it utilizes data from a full exposure field.
- FIG. 4 shows one possible configuration for a sub-embodiment combining hyperspectral analysis using an imaging spectrometer with Fourier imaging of extended defocus defects.
- Aperture 430 in screen 360 enables normal incidence of broadband illumination from illuminator 420 onto sample 300 .
- Mirror 440 deflects the light so that the imaging spectrometer does not impede the line of sight of camera 370 onto screen 360 .
- Imaging spectrometer 420 is shown with Sagnac interferometer configuration, but could utilize other types of interferometers or other imaging spectrometers.
- a possible methodology would include Fourier space analysis for gross defect detection, followed by honing in on a few selected spots using a point measuring or imaging spectrometer.
- the present invention provides a method and apparatus for improving the sensitivity of defocus detection, both for localized and for extended defects, by detecting and analyzing additional information about reflected, diffracted, and scattered light from the sample surface.
- This additional information may include spectral, polarization, or frequency data as well as spatial information. All of the embodiments can be integrated into present macro inspection systems.
- targets may be printed on each wafer on such unused real estate as inside the inter-die streets.
- the targets are designed to show defocus, such as a well controlled diffraction grating structure.
- any of the methods can be used for spot sampling in place of imaging, e.g. for determining full field defocus.
- Other types of varied wavelength illumination sources may be used, for example lasers, arc lamps, fluorescent sources, luminescent sources.
- Other interferometer types may be used. The scope of the invention should be construed in view of the claims.
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Spectrometry And Color Measurement (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/227,720 US20060164649A1 (en) | 2005-01-24 | 2005-09-15 | Multi-spectral techniques for defocus detection |
JP2006013889A JP5199539B2 (ja) | 2005-01-24 | 2006-01-23 | 焦点ずれ検出のためのマルチスペクトル技術 |
US12/069,997 US7719677B2 (en) | 2005-01-24 | 2008-02-14 | Multi-spectral techniques for defocus detection |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64644705P | 2005-01-24 | 2005-01-24 | |
US70744005P | 2005-08-11 | 2005-08-11 | |
US11/227,720 US20060164649A1 (en) | 2005-01-24 | 2005-09-15 | Multi-spectral techniques for defocus detection |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/069,997 Division US7719677B2 (en) | 2005-01-24 | 2008-02-14 | Multi-spectral techniques for defocus detection |
Publications (1)
Publication Number | Publication Date |
---|---|
US20060164649A1 true US20060164649A1 (en) | 2006-07-27 |
Family
ID=36696427
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/227,720 Abandoned US20060164649A1 (en) | 2005-01-24 | 2005-09-15 | Multi-spectral techniques for defocus detection |
US12/069,997 Expired - Fee Related US7719677B2 (en) | 2005-01-24 | 2008-02-14 | Multi-spectral techniques for defocus detection |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/069,997 Expired - Fee Related US7719677B2 (en) | 2005-01-24 | 2008-02-14 | Multi-spectral techniques for defocus detection |
Country Status (2)
Country | Link |
---|---|
US (2) | US20060164649A1 (ja) |
JP (1) | JP5199539B2 (ja) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070076208A1 (en) * | 2005-09-30 | 2007-04-05 | Intel Corporation | Method and instrument for collecting fourier transform (FT) Raman spectra for imaging applications |
US20070147821A1 (en) * | 2005-12-23 | 2007-06-28 | Joachim Gaessler | Device and method for optically inspecting a surface |
US20080279442A1 (en) * | 2007-05-09 | 2008-11-13 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
WO2010015694A1 (de) * | 2008-08-08 | 2010-02-11 | Nanophotonics Ag | Inspektionsvorrichtung- und verfahren für die optische untersuchung von objektoberflächen, insbesondere von waferkanten |
US20130234368A1 (en) * | 2011-10-19 | 2013-09-12 | Korea Research Institute Of Standards And Science | Apparatus and method for manufacturing fine pattern using interferogram of optical axis direction |
US20140036244A1 (en) * | 2010-05-13 | 2014-02-06 | Elpida Memory, Inc. | Method of exposing a semiconductor wafer and exposure apparatus |
WO2014081899A1 (en) * | 2012-11-21 | 2014-05-30 | Kla-Tencor Corporation | Multi-spectral defect inspection for 3d wafers |
US8860937B1 (en) | 2012-10-24 | 2014-10-14 | Kla-Tencor Corp. | Metrology systems and methods for high aspect ratio and large lateral dimension structures |
WO2016090307A1 (en) * | 2014-12-05 | 2016-06-09 | Kla-Tencor Corporation | Lens array-based illumination for wafer inspection |
WO2016187468A1 (en) * | 2015-05-19 | 2016-11-24 | Kla-Tencor Corporation | Topographic phase control for overlay measurement |
US10101675B2 (en) | 2016-03-01 | 2018-10-16 | Asml Netherlands B.V. | Metrology apparatus, method of measuring a structure and lithographic apparatus |
CN109001218A (zh) * | 2018-09-03 | 2018-12-14 | 贵阳学院 | 基于高光谱成像技术的苹果表面缺陷快速无损识别方法 |
TWI681165B (zh) * | 2017-06-30 | 2020-01-01 | 大陸商上海微電子裝備(集團)股份有限公司 | 線寬測量系統和線寬測量裝置 |
CN111323423A (zh) * | 2018-12-14 | 2020-06-23 | 精工爱普生株式会社 | 缺陷检测装置及缺陷检测方法 |
CN111830046A (zh) * | 2020-07-15 | 2020-10-27 | 华中科技大学 | 基于多光谱分光成像的表面缺陷自动光学检测系统及方法 |
CN112284687A (zh) * | 2020-09-21 | 2021-01-29 | 中国科学院上海技术物理研究所 | 一种适用于深空探测成像光谱仪的成像模拟系统和方法 |
US20210148764A1 (en) * | 2019-11-19 | 2021-05-20 | The Boeing Company | Coherent light detection system and method |
KR102678955B1 (ko) | 2015-05-19 | 2024-06-26 | 케이엘에이 코포레이션 | 오버레이 측정을 위한 지형 위상 제어 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8159525B2 (en) * | 2008-06-13 | 2012-04-17 | The United States Of America, As Represented By The Secretary Of Agriculture | Portable multispectral imaging systems |
JP5280305B2 (ja) * | 2009-06-16 | 2013-09-04 | 株式会社日立ハイテクノロジーズ | 露光装置、露光方法、及び表示用パネル基板の製造方法 |
WO2011045125A1 (en) * | 2009-10-13 | 2011-04-21 | Asml Netherlands B.V. | Inspection method and apparatus |
DE102010062720B4 (de) * | 2010-12-09 | 2012-07-12 | Carl Zeiss Smt Gmbh | EUV-Lithographiesystem |
JP2012212221A (ja) * | 2011-03-30 | 2012-11-01 | Fujifilm Corp | 撮像ユニット、及び硬貨識別装置 |
JP6353831B2 (ja) * | 2012-06-26 | 2018-07-04 | ケーエルエー−テンカー コーポレイション | 角度分解反射率測定における走査および回折の光計測からのアルゴリズム的除去 |
US9903806B2 (en) * | 2013-12-17 | 2018-02-27 | Nanometrics Incorporated | Focusing system with filter for open or closed loop control |
WO2015195746A1 (en) | 2014-06-18 | 2015-12-23 | Innopix, Inc. | Spectral imaging system for remote and noninvasive detection of target substances using spectral filter arrays and image capture arrays |
US10072921B2 (en) | 2014-12-05 | 2018-09-11 | Kla-Tencor Corporation | Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element |
US10101676B2 (en) | 2015-09-23 | 2018-10-16 | KLA—Tencor Corporation | Spectroscopic beam profile overlay metrology |
US11313809B1 (en) * | 2016-05-04 | 2022-04-26 | Kla-Tencor Corporation | Process control metrology |
US10438825B2 (en) | 2016-08-29 | 2019-10-08 | Kla-Tencor Corporation | Spectral reflectometry for in-situ process monitoring and control |
CN109844917B (zh) | 2016-10-13 | 2023-07-04 | 科磊股份有限公司 | 用于过程控制的计量系统及方法 |
DE102016224828B4 (de) | 2016-12-13 | 2022-03-17 | Robert Bosch Gmbh | Fourier-Transform-Spektrometer und Verfahren zum Betreiben eines Fourier-Transform-Spektrometers |
US10365211B2 (en) | 2017-09-26 | 2019-07-30 | Kla-Tencor Corporation | Systems and methods for metrology beam stabilization |
DE102018203840A1 (de) | 2018-03-14 | 2019-09-19 | Robert Bosch Gmbh | Fourier-Transform-Spektrometer, Verfahren zum Herstellen eines Fourier-Transform-Spektrometers und Verfahren zur Darstellung eines elektromagnetischen Spektrums |
JP7002383B2 (ja) | 2018-03-22 | 2022-02-04 | キオクシア株式会社 | 位置計測用光源の品質管理方法および半導体製造装置 |
DE102018219450A1 (de) * | 2018-11-14 | 2020-05-14 | Robert Bosch Gmbh | Verfahren zum Erzeugen eines Spektrums und Spektrometereinheit |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5835214A (en) * | 1991-02-22 | 1998-11-10 | Applied Spectral Imaging Ltd. | Method and apparatus for spectral analysis of images |
US5856871A (en) * | 1993-08-18 | 1999-01-05 | Applied Spectral Imaging Ltd. | Film thickness mapping using interferometric spectral imaging |
US6633831B2 (en) * | 2000-09-20 | 2003-10-14 | Kla Tencor Technologies | Methods and systems for determining a critical dimension and a thin film characteristic of a specimen |
US20040233441A1 (en) * | 2003-02-22 | 2004-11-25 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0694633A (ja) * | 1992-09-09 | 1994-04-08 | Nikon Corp | 欠陥検査装置 |
US5943126A (en) * | 1997-03-11 | 1999-08-24 | Lucent Technologies Inc. | Method and apparatus for detecting surface qualities on an optical fiber |
US6433878B1 (en) * | 2001-01-29 | 2002-08-13 | Timbre Technology, Inc. | Method and apparatus for the determination of mask rules using scatterometry |
US6922236B2 (en) * | 2001-07-10 | 2005-07-26 | Kla-Tencor Technologies Corp. | Systems and methods for simultaneous or sequential multi-perspective specimen defect inspection |
JP3971943B2 (ja) * | 2002-03-26 | 2007-09-05 | アイエスオーエー、 インク | 光学的検査方法及び光学的検査システム |
-
2005
- 2005-09-15 US US11/227,720 patent/US20060164649A1/en not_active Abandoned
-
2006
- 2006-01-23 JP JP2006013889A patent/JP5199539B2/ja not_active Expired - Fee Related
-
2008
- 2008-02-14 US US12/069,997 patent/US7719677B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5835214A (en) * | 1991-02-22 | 1998-11-10 | Applied Spectral Imaging Ltd. | Method and apparatus for spectral analysis of images |
US5856871A (en) * | 1993-08-18 | 1999-01-05 | Applied Spectral Imaging Ltd. | Film thickness mapping using interferometric spectral imaging |
US6633831B2 (en) * | 2000-09-20 | 2003-10-14 | Kla Tencor Technologies | Methods and systems for determining a critical dimension and a thin film characteristic of a specimen |
US20040233441A1 (en) * | 2003-02-22 | 2004-11-25 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070076208A1 (en) * | 2005-09-30 | 2007-04-05 | Intel Corporation | Method and instrument for collecting fourier transform (FT) Raman spectra for imaging applications |
US7518728B2 (en) * | 2005-09-30 | 2009-04-14 | Intel Corporation | Method and instrument for collecting fourier transform (FT) Raman spectra for imaging applications |
US7577353B2 (en) * | 2005-12-23 | 2009-08-18 | Intelligente Optische Sensoren Und Systeme Gmbh | Device and method for optically inspecting a surface |
US20070147821A1 (en) * | 2005-12-23 | 2007-06-28 | Joachim Gaessler | Device and method for optically inspecting a surface |
US8189195B2 (en) * | 2007-05-09 | 2012-05-29 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
US20080279442A1 (en) * | 2007-05-09 | 2008-11-13 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
WO2010015694A1 (de) * | 2008-08-08 | 2010-02-11 | Nanophotonics Ag | Inspektionsvorrichtung- und verfahren für die optische untersuchung von objektoberflächen, insbesondere von waferkanten |
DE112009001936B4 (de) * | 2008-08-08 | 2014-03-13 | Rudolph Technologies Germany Gmbh | Inspektionsvorrichtung- und Verfahren für die optische Untersuchung von Objektoberflächen, insbesondere von Waferkanten |
US20140036244A1 (en) * | 2010-05-13 | 2014-02-06 | Elpida Memory, Inc. | Method of exposing a semiconductor wafer and exposure apparatus |
US9707714B2 (en) * | 2011-10-19 | 2017-07-18 | Korea Research Institute Of Standards And Science | Apparatus and method for manufacturing fine pattern using interferogram of optical axis direction |
US20130234368A1 (en) * | 2011-10-19 | 2013-09-12 | Korea Research Institute Of Standards And Science | Apparatus and method for manufacturing fine pattern using interferogram of optical axis direction |
US8860937B1 (en) | 2012-10-24 | 2014-10-14 | Kla-Tencor Corp. | Metrology systems and methods for high aspect ratio and large lateral dimension structures |
WO2014081899A1 (en) * | 2012-11-21 | 2014-05-30 | Kla-Tencor Corporation | Multi-spectral defect inspection for 3d wafers |
US8912495B2 (en) | 2012-11-21 | 2014-12-16 | Kla-Tencor Corp. | Multi-spectral defect inspection for 3D wafers |
KR102242926B1 (ko) | 2014-12-05 | 2021-04-20 | 케이엘에이 코포레이션 | 웨이퍼 검사를 위한 렌즈 어레이 기반 조명 |
WO2016090307A1 (en) * | 2014-12-05 | 2016-06-09 | Kla-Tencor Corporation | Lens array-based illumination for wafer inspection |
US9625726B2 (en) | 2014-12-05 | 2017-04-18 | Kla-Tencor Corp. | Lens array-based illumination for wafer inspection |
KR20170095273A (ko) * | 2014-12-05 | 2017-08-22 | 케이엘에이-텐코 코포레이션 | 웨이퍼 검사를 위한 렌즈 어레이 기반 조명 |
CN107636538A (zh) * | 2015-05-19 | 2018-01-26 | 科磊股份有限公司 | 用于叠加测量的形貌相位控制 |
KR102678955B1 (ko) | 2015-05-19 | 2024-06-26 | 케이엘에이 코포레이션 | 오버레이 측정을 위한 지형 위상 제어 |
KR20210149884A (ko) * | 2015-05-19 | 2021-12-09 | 케이엘에이 코포레이션 | 오버레이 측정을 위한 지형 위상 제어 |
KR20210149886A (ko) * | 2015-05-19 | 2021-12-09 | 케이엘에이 코포레이션 | 오버레이 측정을 위한 지형 위상 제어 |
US10520832B2 (en) | 2015-05-19 | 2019-12-31 | Kla-Tencor Corporation | Topographic phase control for overlay measurement |
KR102334168B1 (ko) | 2015-05-19 | 2021-12-06 | 케이엘에이 코포레이션 | 오버레이 측정을 위한 지형 위상 제어 |
WO2016187468A1 (en) * | 2015-05-19 | 2016-11-24 | Kla-Tencor Corporation | Topographic phase control for overlay measurement |
CN112859541A (zh) * | 2015-05-19 | 2021-05-28 | 科磊股份有限公司 | 光学系统 |
KR102665579B1 (ko) | 2015-05-19 | 2024-05-10 | 케이엘에이 코포레이션 | 오버레이 측정을 위한 지형 위상 제어 |
KR20180000730A (ko) * | 2015-05-19 | 2018-01-03 | 케이엘에이-텐코 코포레이션 | 오버레이 측정을 위한 지형 위상 제어 |
KR102607646B1 (ko) | 2015-05-19 | 2023-11-29 | 케이엘에이 코포레이션 | 오버레이 측정을 위한 지형 위상 제어 |
US10101675B2 (en) | 2016-03-01 | 2018-10-16 | Asml Netherlands B.V. | Metrology apparatus, method of measuring a structure and lithographic apparatus |
TWI681165B (zh) * | 2017-06-30 | 2020-01-01 | 大陸商上海微電子裝備(集團)股份有限公司 | 線寬測量系統和線寬測量裝置 |
CN109001218A (zh) * | 2018-09-03 | 2018-12-14 | 贵阳学院 | 基于高光谱成像技术的苹果表面缺陷快速无损识别方法 |
US11293877B2 (en) * | 2018-12-14 | 2022-04-05 | Seiko Epson Corporation | Defect detecting device and defect detecting method |
CN111323423A (zh) * | 2018-12-14 | 2020-06-23 | 精工爱普生株式会社 | 缺陷检测装置及缺陷检测方法 |
US11047742B2 (en) * | 2019-11-19 | 2021-06-29 | The Boeing Company | Coherent light detection system and method |
US20210148764A1 (en) * | 2019-11-19 | 2021-05-20 | The Boeing Company | Coherent light detection system and method |
CN111830046A (zh) * | 2020-07-15 | 2020-10-27 | 华中科技大学 | 基于多光谱分光成像的表面缺陷自动光学检测系统及方法 |
CN112284687A (zh) * | 2020-09-21 | 2021-01-29 | 中国科学院上海技术物理研究所 | 一种适用于深空探测成像光谱仪的成像模拟系统和方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5199539B2 (ja) | 2013-05-15 |
JP2006208380A (ja) | 2006-08-10 |
US20080212089A1 (en) | 2008-09-04 |
US7719677B2 (en) | 2010-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7719677B2 (en) | Multi-spectral techniques for defocus detection | |
CN107003114B (zh) | 光谱光束轮廓计量 | |
US6762831B2 (en) | Method and apparatus for inspecting defects | |
US7061623B2 (en) | Interferometric back focal plane scatterometry with Koehler illumination | |
EP1864080B1 (en) | Apparatus and method for enhanced critical dimension scatterometry | |
KR100697277B1 (ko) | 각도-분해 분광 리소그래피 특성화를 위한 방법 및 장치 | |
TWI402498B (zh) | 影像形成方法及影像形成裝置 | |
US7724362B1 (en) | Oblique incidence macro wafer inspection | |
KR970707432A (ko) | 패턴 결함 검출기(defect detection in patterned substrates using optical computing) | |
JP5472096B2 (ja) | サンプルの平面の反射表面を検査する撮像光学検査装置及び方法 | |
KR20180019243A (ko) | 레이저 암시야 시스템에서 반점을 억제하는 방법 및 장치 | |
JPH11132941A (ja) | 画像生成atr分光装置及びスペクトル吸収画像を得る方法 | |
KR20210158856A (ko) | 초분광 이미징을 사용하는 반도체 공정의 광학적 진단 | |
TW201821789A (zh) | 同時多方向雷射晶圓檢測 | |
US11264256B2 (en) | Wafer inspection apparatus | |
US6040907A (en) | Microscope system for the detection of emission distribution and process for operation of the same | |
US6735333B1 (en) | Pattern inspection apparatus | |
JP2001021810A (ja) | 干渉顕微鏡 | |
EP2098849B1 (en) | Test apparatus usable to measure stray light in electro-optical apparatuses | |
JP4716993B2 (ja) | マイクロエレクトロニクスにおける寸法検査のための光学フーリエ変換の使用 | |
JP2024510372A (ja) | 短波赤外線波長を使用する光学計量 | |
US20040135995A1 (en) | Spectroscopic ellipsometer wafer mapper for DUV to IR | |
CN116429257A (zh) | 一种光谱测量系统及光谱式厚度测量系统 | |
JP2020169938A (ja) | 分光測定装置及び分光測定方法 | |
JPH0424523A (ja) | 波長域可変マルチチャネル分光器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: KLA-TENCOR TECHNOLOGIES CORPORATION, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ROSENGAUS, ELIEZER;REEL/FRAME:016999/0551 Effective date: 20050908 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |