US20060148174A1 - Method for forming recess gate of semiconductor device - Google Patents
Method for forming recess gate of semiconductor device Download PDFInfo
- Publication number
- US20060148174A1 US20060148174A1 US11/148,557 US14855705A US2006148174A1 US 20060148174 A1 US20060148174 A1 US 20060148174A1 US 14855705 A US14855705 A US 14855705A US 2006148174 A1 US2006148174 A1 US 2006148174A1
- Authority
- US
- United States
- Prior art keywords
- gate
- polysilicon layer
- forming
- region
- layer pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 44
- 229920005591 polysilicon Polymers 0.000 claims abstract description 44
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 238000000059 patterning Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
Abstract
Description
- 1. Field of the Invention
- The present invention generally relates to a method for forming a recess gate of a semiconductor device, and more specifically, to a method for forming a recess gate of a semiconductor device wherein a contact region is formed by depositing a polysilicon layer pattern covering the contact region prior to the formations of a recess gate region and a gate structure to suppress increase in resistance of the contact region and tWR (Write Recovery time) characteristics.
- 2. Description of the Related Art
-
FIG. 1 is a cross-sectional view illustrating a conventional method for forming a recess gate of a semiconductor device. - Referring to
FIG. 1 , a predetermined region of asemiconductor substrate 10 where a channel region is to be formed is etched to form a recess gate region (not shown). Thereafter, a gate oxide film (not shown) is formed in the recess gate region. - Next, a planarized polysilicon layer (not shown) filling up the recess gate region is formed on the entire surface. A stacked structure of a gate conductive layer and a gate hard mask layer is then formed on the planarized polysilicon layer.
- Afterward, the stacked structure and the polysilicon layer are patterned to form a gate structure including a
polysilicon layer pattern 30, a gateconductive layer pattern 40 and a gate hardmask layer pattern 50. Thereafter, aspacer 60 is formed on a sidewall of the gate structure. - In accordance with the above-described conventional method for forming a recess gate of a semiconductor device, when misalignment between a device isolation film and the gate structure occurs resistance of a storage node contact region of one cell of the two sharing one active region occurs due to overlay.
- Moreover, the misalignment between the device isolation film and the gate structure causes the storage contact region to be not completely exposed in a subsequent etching process for forming a landing plug contact hole. As a result, the tWR characteristic of the device is deteriorated.
- Accordingly, it is an object of the present invention to provide a method for forming a recess gate of a semiconductor device wherein a contact region is formed by depositing a polysilicon layer pattern covering the contact region prior to the formations of a recess gate region and a gate structure to suppress increase in resistance of the contact region and tWR characteristics.
- In order to achieve above object of the present invention in accordance with a preferred embodiment, there is provided a method for forming a recess gate of a semiconductor device, comprising the steps of:
- (a) forming a polysilicon layer pattern on a semiconductor substrate having an active region, the polysilicon layer pattern covering a contact region;
- (b) forming an insulating film covering the polysilicon layer pattern;
- (c) etching the semiconductor substrate using the polysilicon layer pattern as an etching mask to form a recess gate region in the active region;
- (d) forming a planarized gate polysilicon layer at least filling up the recess gate region;
- (e) depositing a gate conductive layer and a gate hard mask layer on the gate polysilicon layer to form a stacked structure of the gate polysilicon layer, the gate conductive layer and the gate hard mask layer;
- (f) etching the stacked structure to form a gate structure, whereby the insulating film is exposed;
- (g) forming a spacer on a top surface and a sidewall of the gate structure;
- (h) removing the exposed insulating film to expose the polysilicon layer pattern; and
- (i) depositing a polysilicon film on the exposed polysilicon layer pattern in the contact region to form a landing plug.
-
FIG. 1 is a cross-sectional view illustrating a conventional method for forming a recess gate of a semiconductor device. -
FIGS. 2 a through 2 j are cross-sectional views illustrating a method for forming a recess gate of a semiconductor device in accordance with a preferred embodiment of the present invention. - Reference will now be made in detail to exemplary embodiments of the present invention. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.
-
FIGS. 2 a through 2 d illustrate a method for forming a recess gate of a semiconductor device according to a preferred embodiment of the present invention. - Referring to
FIG. 2 a, adevice isolation film 110 defining an active region is formed on asemiconductor substrate 100. - Referring to
FIG. 2 b, apolysilicon layer 120 is formed on the entire surface including a surface of thesemiconductor substrate 100. A firstphotoresist film pattern 130 covering a contact region and exposing a recess gate region is then formed on thepolysilicon layer 120. - Referring to
FIG. 2 c, thepolysilicon layer 120 is etched using the firstphotoresist film pattern 130 as an etching mask to form apolysilicon layer pattern 125 covering the contact region. Thereafter, the firstphotoresist film pattern 130 is removed. - Referring to
FIG. 2 d, aninsulating film 155 covering thepolysilicon layer pattern 125 is formed. Preferably, theinsulating film 155 comprises a stacked structure of anoxide film 140 and anitride film 150. Theinsulating film 155 prevents attack on thepolysilicon layer pattern 125 during the formation process of arecess gate region 160 in the active region. - Referring to
FIG. 2 e, a predetermined thickness of thesemiconductor substrate 100 is etched using thepolysilicon layer pattern 125 including theinsulating film 155 as an etching mask to form therecess gate region 160 in the active region. Preferably, the predetermined thickness of thesemiconductor substrate 100 etched ranges from 80 nm to 150 nm. - Referring to
FIG. 2 f, a planarizedgate polysilicon layer 170 at least filling up therecess gate region 160 is formed on the entire surface. - Next, a gate
conductive layer 180 and a gatehard mask layer 190 are formed on the planarizedgate polysilicon layer 170 to form a stacked structure of thegate polysilicon layer 170, a gateconductive layer 180 and a gatehard mask layer 190. A thickness of thegate polysilicon layer 170 may be greater than that of the stacked structure of thepolysilicon layer pattern 125 and theinsulating film 155. The gateconductive layer 180 may comprise a tungsten layer or a tungsten silicide layer to reduce resistance of a gate. - Moreover, the gate
hard mask layer 190 may comprise a nitride film to prevent a SAC (Self Align Contact) fail in a subsequent process for forming a landing plug contact hole. - Thereafter, a second
photoresist film pattern 200 defining a gate region is formed on the gatehard mask layer 190. - Referring to
FIG. 2 g, the stacked structure is etched using the secondphotoresist film pattern 200 as an etching mask to form agate structure 205 including a gatepolysilicon layer pattern 175, a gateconductive layer pattern 185 and a gate hardmask layer pattern 195 and expose theinsulating film 155. - Referring to
FIG. 2 h, aspacer 210 covering thegate structure 205 is formed. Thespacer 210 preferably comprises a nitride film. - Referring to
FIG. 2 i, the exposedinsulating film 155 on the contact region is removed. - Referring to
FIG. 2 j, the space between thegate structures 205 including thespacer 210 is filled up with a polysilicon film to form alanding plug 220. - As described above, the method for forming a recess gate of a semiconductor device in accordance with the present invention provides an improved resistance characteristic of the contact region and tWR characteristic of the device by forming a polysilicon layer pattern covering a contact region and to secure the contact region prior to formation of a gate structure.
- As the present invention may be embodied in several forms without departing from the spirit or essential characteristics thereof, it should also be understood that the above-described embodiment is not limited by any of the details of the foregoing description, unless otherwise specified, but rather should be construed broadly within its spirit and scope as defined in the appended claims, and therefore all changes and modifications that fall within the metes and bounds of the claims, or equivalences of such metes and bounds are therefore intended to be embraced by the appended claims.
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040116436A KR100620655B1 (en) | 2004-12-30 | 2004-12-30 | Method for forming recess gate of semiconductor device |
KR10-2004-0116436 | 2004-12-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
US7071059B1 US7071059B1 (en) | 2006-07-04 |
US20060148174A1 true US20060148174A1 (en) | 2006-07-06 |
Family
ID=36613695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/148,557 Expired - Fee Related US7071059B1 (en) | 2004-12-30 | 2005-06-09 | Method for forming recess gate of semiconductor device |
Country Status (2)
Country | Link |
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US (1) | US7071059B1 (en) |
KR (1) | KR100620655B1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080003832A1 (en) * | 2006-06-29 | 2008-01-03 | Hynix Semiconductor Inc. | Method for fabricating recess gate of semiconductor device |
US20090023277A1 (en) * | 2007-07-20 | 2009-01-22 | Hynix Semiconductor Inc. | Method for fabricating semiconductor device |
US20110003459A1 (en) * | 2009-07-03 | 2011-01-06 | Jong-Han Shin | Method for fabricating buried gate using pre landing plugs |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100846099B1 (en) | 2007-01-30 | 2008-07-14 | 삼성전자주식회사 | Method of manufacturing semiconductor device including recessed channel transistor |
KR100951566B1 (en) * | 2007-03-15 | 2010-04-09 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device with recess gate |
KR100851921B1 (en) * | 2007-07-02 | 2008-08-12 | 주식회사 하이닉스반도체 | Method for forming trench in semiconductor device and method for forming recess gate using the same |
KR100849192B1 (en) * | 2007-08-13 | 2008-07-30 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device |
KR100945229B1 (en) | 2008-01-02 | 2010-03-03 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
KR101095739B1 (en) | 2010-12-17 | 2011-12-21 | 주식회사 하이닉스반도체 | Semiconductor device and method for forming the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6777737B2 (en) * | 2001-10-30 | 2004-08-17 | International Business Machines Corporation | Vertical DRAM punchthrough stop self-aligned to storage trench |
US20050079661A1 (en) * | 2003-10-13 | 2005-04-14 | Cho Min-Hee | Recessed gate transistor structure and method of forming the same |
US20050196947A1 (en) * | 2003-12-23 | 2005-09-08 | Hyeoung-Won Seo | Recess type MOS transistor and method of manufacturing same |
US20050199930A1 (en) * | 2004-03-10 | 2005-09-15 | Hyeoung-Won Seo | Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the same |
-
2004
- 2004-12-30 KR KR1020040116436A patent/KR100620655B1/en not_active IP Right Cessation
-
2005
- 2005-06-09 US US11/148,557 patent/US7071059B1/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6777737B2 (en) * | 2001-10-30 | 2004-08-17 | International Business Machines Corporation | Vertical DRAM punchthrough stop self-aligned to storage trench |
US20050079661A1 (en) * | 2003-10-13 | 2005-04-14 | Cho Min-Hee | Recessed gate transistor structure and method of forming the same |
US20050196947A1 (en) * | 2003-12-23 | 2005-09-08 | Hyeoung-Won Seo | Recess type MOS transistor and method of manufacturing same |
US20050199930A1 (en) * | 2004-03-10 | 2005-09-15 | Hyeoung-Won Seo | Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the same |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080003832A1 (en) * | 2006-06-29 | 2008-01-03 | Hynix Semiconductor Inc. | Method for fabricating recess gate of semiconductor device |
US20090023277A1 (en) * | 2007-07-20 | 2009-01-22 | Hynix Semiconductor Inc. | Method for fabricating semiconductor device |
US7833868B2 (en) * | 2007-07-20 | 2010-11-16 | Hynix Semiconductor Inc. | Method for fabricating a semiconductor device having recessed gate electrode and elevated source and drain regions |
US20110003459A1 (en) * | 2009-07-03 | 2011-01-06 | Jong-Han Shin | Method for fabricating buried gate using pre landing plugs |
US8357600B2 (en) | 2009-07-03 | 2013-01-22 | Hynix Semiconductor Inc. | Method for fabricating buried gate using pre landing plugs |
US8753966B2 (en) * | 2009-07-03 | 2014-06-17 | SK Hynix Inc. | Method for fabricating buried gates using pre landing plugs |
Also Published As
Publication number | Publication date |
---|---|
KR100620655B1 (en) | 2006-09-13 |
KR20060077542A (en) | 2006-07-05 |
US7071059B1 (en) | 2006-07-04 |
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